TW202324869A - Electronic circuit protection device - Google Patents

Abstract

The electronic circuit protection device of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a fourth semiconductor, a first resistor, a second resistor, and a voltage comparator, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.

Description

Electronic circuit protection device

The electronic circuit protection device of the present invention belongs to the electronic technical field with the function of protecting the DC power supply when overload or short circuit occurs at both ends of the load during the DC circuit application process.

The electronic circuit protection device of the present invention has not found the same or similar technology as the electronic circuit protection device of the present invention, especially the first semiconductor and the invention of the present invention. The technical means of connecting the second semiconductor in series can achieve the function of protecting the DC power supply when the two ends of the load are overloaded or short-circuited during the application of the DC circuit. This is the first invention in the world. Other circuit features are described in detail in the specification of the invention. description.

Purpose of the present invention:

The present invention applies the first semiconductor, the second semiconductor, the third semiconductor, the fourth semiconductor, the first resistor, the second resistor and the voltage comparator, so that the DC power supply can be protected when the load overload or short circuit occurs in the DC circuit power supply .

When the load is short-circuited, the present invention uses the first semiconductor and the second semiconductor to perform an open-circuit operation in a very short time, thereby achieving the function of protecting the DC power supply circuit and avoiding various disasters caused by the short-circuit of the load.

The first semiconductor and the second semiconductor of the present invention enable the load to receive power from the DC power supply when the present invention is turned on, and prevent the load from receiving power from the DC power supply when the present invention is turned off.

When the present invention is turned on, the conduction of the first semiconductor is the voltage supplied by the first power supply, and the conduction of the second semiconductor is the voltage supplied by the second power supply.

No matter when the present invention is turned on or off, the second semiconductor can always keep the conduction state for application requirements, and at this time, the start-up or shutdown action of the present invention is performed by the first semiconductor.

The present invention has following characteristics:

1. The first semiconductor and the second semiconductor of the present invention have the characteristics of being connected in series, which are responsible for the open circuit and conduction of the DC power supply to supply power to the load.

2. The third semiconductor of the present invention is responsible for controlling the opening and conducting actions of the first semiconductor, so as to protect the DC power supply circuit when a short circuit occurs at both ends of the load.

3. The fourth semiconductor of the present invention is responsible for controlling the opening and conducting actions of the second semiconductor, so as to protect the DC power supply circuit when a short circuit occurs at both ends of the load.

4. In the present invention, the first resistor has the function of limiting the current to prevent the first semiconductor from being damaged due to excessive gate current.

5. In the present invention, the second resistor has the function of limiting the current to prevent the second semiconductor from being damaged due to excessive gate current.

6. In the present invention, the circuit composed of the third semiconductor and the voltage comparator has the function of interlock.

7. The present invention is provided with a circuit composed of the second semiconductor, the fourth semiconductor and a voltage comparator, which has the function of self protection of the second semiconductor.

8. The first semiconductor of the present invention includes N Channel Metal Oxide Semiconductor Field Effect Transistor (N Channel Metal Oxide Semiconductor Field Effect Transistor, N Channel MOSFET), Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) and N Channel MOSFET. The N Type Transistor can be selected according to the needs.

9. The second semiconductor of the present invention includes N-channel metal oxide semiconductor field-effect transistor, insulated gate bipolar transistor and N-type transistor, which can be selected according to requirements.

10. The second semiconductor of the present invention can be replaced by a resistive sensor for application requirements.

11. The third semiconductor of the present invention includes N-channel metal oxide semiconductor field effect transistor, insulated gate bipolar transistor and N-type transistor, which can be selected according to requirements.

12. The fourth semiconductor of the present invention includes N-channel metal oxide semiconductor field effect transistor, insulated gate bipolar transistor and N-type transistor, which can be selected according to requirements.

10: load

11: The first power supply

12: Second power supply

13: The third power supply

14: DC power supply

15: Negative input terminal of voltage comparator

16: Positive input terminal of voltage comparator

17: The output terminal of the voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21:First Semiconductor

22:Second semiconductor

23: The third semiconductor

24: Fourth Semiconductor

25: Resistance sensor

Fig. 1 is the first embodiment of the electronic circuit protection device of the present invention.

Fig. 2 is the second embodiment of the electronic circuit protection device of the present invention.

Fig. 3 is the third embodiment of the electronic circuit protection device of the present invention.

Fig. 4 is the fourth embodiment of the electronic circuit protection device of the present invention.

Fig. 5 is the fifth embodiment of the electronic circuit protection device of the present invention.

As shown in FIG. 1, it is the first embodiment of the electronic circuit protection device of the present invention. It can be seen from the figure that the electronic circuit protection device of the present invention includes a first semiconductor 21, a second semiconductor 22, a third semiconductor 23, and a fourth semiconductor 24. , a first resistor 18 , a second resistor 19 and a voltage comparator 20 .

The positive end of the DC power supply 14 is connected to the first end of the load 10, the second end of the load 10 is connected to the drain D (Drain, D) of the first semiconductor 21, and the source S (Source, S) of the first semiconductor 21 is connected to The drain D of the second semiconductor 22 and the source S of the second semiconductor 22 are connected to the negative terminal of the DC power supply 14 , wherein the first semiconductor 21 and the second semiconductor 22 are connected in series.

The gate G (Gate, G) of the first semiconductor 21 is connected to the second end of the first resistor 18 and the drain D of the third semiconductor 23, the source S of the third semiconductor 23 and the source S of the first semiconductor 21 Connection, the gate G of the third semiconductor 23 is connected to the output terminal (Output) 17 of the voltage comparator 20, the first terminal of the first resistor 18 and the positive power supply terminal of the voltage comparator 20 are connected to the positive power of the first power supply 11 terminal or the positive terminal of the second power supply 12 or another power supply depends on its needs, and is not self-limiting.

The positive input (Non-inverting Input) 15 of the voltage comparator 20 is connected to the source S of the first semiconductor 21 and the drain D of the second semiconductor 22, and the negative input (Inverting Input) 16 of the voltage comparator 20 is connected to the third The power supply 13 and the third power supply 13 are the reference voltage (Reference Voltage) of the negative input terminal 16 of the voltage comparator 20. The negative power supply terminal of the voltage comparator 20 is connected to the source S of the second semiconductor 22 and the negative terminal of the DC power supply 14.

The gate G of the second semiconductor 22 is connected to the drain of the fourth semiconductor 24 Pole D and the second end of the second resistor, the first end of the second resistor is connected to the positive terminal of the second power supply 12, the source S of the fourth semiconductor 24 is connected to the source S of the second semiconductor 22, the fourth The gate G of the semiconductor 24 is connected to the output terminal 17 of the voltage comparator 20 .

As shown in FIG. 1, when both ends of the load 10 are short-circuited, according to the output characteristic curve table (Output Characteristics) of the second semiconductor 22, it can be seen that when the drain current of the second semiconductor 22 rises to its corresponding drain current When the source voltage (Drain Source Voltage) reaches the reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the fourth semiconductor 24 and the third The gate G of the semiconductor 23, the drain D and the source S of the fourth semiconductor 24 are turned on (Turn On), the drain D and the source S of the second semiconductor 22 are open (Turn Off), and the third semiconductor 23 The drain D and the source S of the first semiconductor 21 are turned on, the drain D and the source S of the first semiconductor 21 are open, and the DC power supply 14 does not supply power to the short-circuit load 10, so that the DC power supply 14 is protected; The on-state voltage value between the drain D and the source S of the semiconductor 22 cooperates with the reference voltage value of the negative input terminal 16 of the voltage comparator 20 to achieve the function of overload protection.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the fourth semiconductor 24, the drain D and the source S of the fourth semiconductor 24 are turned on, and the drain D and the source of the second semiconductor 22 The pole S is open, which means that the second semiconductor 22 has the function of self protection.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the third semiconductor 23, the drain D and the source S of the third semiconductor 23 are turned on at this time, and the first power supply 11 supplies power to the first resistor 18 power supply through the drain D and source S of the third semiconductor 23 At the positive input terminal 15 of the voltage comparator 20, a self-locking function is generated, so that the output terminal 17 of the voltage comparator 20 is maintained to output a positive voltage, and at the same time, because the drain electrode D and the source electrode S of the third semiconductor 23 are turned on, causing The drain D and the source S of the first semiconductor 21 are open to protect the DC power supply 14 .

As shown in FIG. 2, it is the second embodiment of the electronic circuit protection device of the present invention. It can be seen from the figure that the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in FIG. The N-channel metal-oxide-semiconductor field-effect transistor is changed to an insulated gate bipolar transistor, and other circuit structures are the same as those in FIG. 1 and will not be described in detail.

As shown in FIG. 2, when both ends of the load 10 are short-circuited, according to the output characteristic curve table of the second semiconductor 22, when the collector current (Collector Current) of the second semiconductor 22 rises to its corresponding collector-emitter voltage ( Collector Emitter Voltage) reaches the reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the fourth semiconductor 24 and the gate of the third semiconductor 23 At this time, the collector C and emitter E of the fourth semiconductor 24 are turned on, the collector C and emitter E of the second semiconductor 22 are open, and at the same time, the collector C and emitter E of the third semiconductor 23 are turned on, and the first The collector C and the emitter E of the semiconductor 21 are open-circuited, and the DC power supply 14 is not supplied to the short-circuit load 10, so that the DC power supply 14 is protected; in the same way, an appropriate distance between the collector C and the emitter E of the second semiconductor 22 is selected. The collector-emitter voltage value of the voltage comparator 20 and the reference voltage value of the negative input terminal 16 of the voltage comparator 20 can also achieve the function of overload protection.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the fourth semiconductor 24, the collector C and the emitter E of the fourth semiconductor 24 are turned on, and the collector C and the emitter of the second semiconductor 22 The pole E is open circuited, which means that the second semiconductor 22 has its own protection (Self Protection) function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the third semiconductor 23, the collector C and the emitter E of the third semiconductor 23 are turned on, and the first power supply 11 supplies power to the first resistor 18, through the collector C and the emitter E of the third semiconductor 23, power is supplied to the positive input terminal 15 of the voltage comparator 20, and the function of self-locking is generated, so that the output terminal 17 of the voltage comparator 20 is maintained to output a positive voltage, and at the same time Because the collector C and the emitter E of the third semiconductor 23 are turned on, the collector C and the emitter E of the first semiconductor 21 are opened, thereby achieving the function of protecting the DC power supply 14 .

As can be seen from the above, the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in FIG. The principle is the same, and the function of protecting the DC power supply 14 when the load 10 is short-circuited is also the same.

As can be seen from the above, the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Fig. 1 and Fig. 2 can be changed from N-channel metal oxide semiconductor field effect transistors to insulated gate bipolar transistors. crystal, the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Fig. 1 and Fig. The second semiconductor 22 is replaced by an N-channel metal-oxide-semiconductor field-effect transistor with an insulated gate bipolar transistor, which can be selected according to its needs and is not limited by itself.

As shown in FIG. 3, it is the third embodiment of the electronic circuit protection device of the present invention. It can be seen from the figure that the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in FIG. The N-channel metal-oxide-semiconductor field-effect transistor is changed to an N-type transistor, and other circuit structures are the same as those in FIG. 1 and will not be described in detail.

As shown in FIG. 3, when both ends of the load 10 are short-circuited, according to the output characteristic curve table of the second semiconductor 22, when the collector current (Collector Current) of the second semiconductor 22 rises to its corresponding collector-emitter voltage ( Collector Emitter Voltage) reaches the reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the base (Base, B) B of the fourth semiconductor 24 and the first The base B of the third semiconductor 23, the collector C and the emitter E of the fourth semiconductor 24 are turned on at this time, the collector C and the emitter E of the second semiconductor 22 are open, and the collector C and the emitter of the third semiconductor 23 are open. E is turned on, the collector C and the emitter E of the first semiconductor 21 are open, and the DC power supply 14 is not supplied to the short-circuit load 10, so that the DC power supply 14 is protected; in the same way, the collector C and the emitter E of the second semiconductor 22 are properly selected. The collector-emitter voltage value between the emitters E and the reference voltage value of the negative input terminal 16 of the voltage comparator 20 can also achieve the function of overload protection.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the base B of the fourth semiconductor 24, the collector C and the emitter E of the fourth semiconductor 24 are turned on, and the collector C and the emitter of the second semiconductor 22 The pole E is open, which means that the second semiconductor 22 has the function of self-protection.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the base B of the third semiconductor 23, the collector C and the emitter E of the third semiconductor 23 are turned on, and the first power supply 11 supplies power to the first resistor 18, through the collector C and the emitter E of the third semiconductor 23, power is supplied to the positive input terminal 15 of the voltage comparator 20, and the function of self-locking is generated, so that the output terminal 17 of the voltage comparator 20 is maintained to output a positive voltage, and at the same time Because the collector C and the emitter E of the third semiconductor 23 are turned on, the collector C and the emitter E of the first semiconductor 21 are opened, thereby achieving the function of protecting the DC power supply 14 .

As can be seen from the above, the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in FIG. 1 are changed from N-channel metal oxide semiconductor field effect transistors to N-type transistors. And the function of protecting the DC power supply 14 when its load 10 is short-circuited is also the same.

As shown in Figure 4, it is the fourth embodiment of the electronic circuit protection device of the present invention. It can be seen from the figure that the fourth semiconductor 24 in Figure 1 is removed, so the second semiconductor 22 does not have the function of self-protection, and other circuits The structures are the same as those in FIG. 1 and will not be repeated.

It can be seen from FIG. 4 that because the fourth semiconductor 24 in FIG. 1 is removed, and only the drain-to-source voltage value of the second semiconductor 22 is used as the drain current overload or short-circuit data, the purpose of protecting the DC power supply 14 is achieved. .

It can be seen from FIG. 4 that since the fourth semiconductor 24 is removed, the first semiconductor 21 is responsible for the conduction and opening of the DC power supply 14 to the load 10 , and the operation principles are the same as those in FIG. 1 and will not be described in detail.

As shown in FIG. 5, it is the fifth embodiment of the electronic circuit protection device of the present invention. It can be seen from the figure that the second semiconductor 22 in FIG. 4 is removed and replaced by a resistance sensor (Resistor Sensor) 25, which The first end of the resistance sensor 25 is connected to the source S of the first semiconductor 21, and the second end of the resistance sensor 25 is connected to the negative power supply end of the voltage comparator 20. The other circuit structures are the same as those in FIG. 4 and will not be repeated.

As shown in Figure 5, it can be seen from the figure that the second semiconductor 22 in Figure 4 is removed and replaced by a resistance sensor 25, and the drain of the first semiconductor 21 at both ends of the resistance sensor 25 is used Current voltage drop, when the drain current of the first semiconductor 21 rises to the voltage across the resistance sensor 25 and reaches the reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs A positive voltage is supplied to the gate G of the third semiconductor 23 , so that the drain D and the source S of the third semiconductor 23 are turned on. At this time, the first semiconductor 21 is open to protect the DC power supply 14 .

It can be seen from the above that the first semiconductor 21, the second semiconductor 22, the third semiconductor 23, and the fourth semiconductor 24 in FIG. 1 are partially changed from N-channel metal oxide semiconductor field effect transistors to insulated gate bipolar transistors according to their needs. Transistors or N-type transistors instead, not self-limiting.

As can be seen from the above, the first power supply 11, the second power supply 12 and the third power supply 13 in Fig. 1, Fig. 2, Fig. 3, and Fig. 4 are all marked with dots for the sake of brevity, while Fig. 5 does not connect them. The second power supply 12 is well known to all knowledgeable people in the industry that the power supply has a positive terminal and a negative terminal, which are not marked in the figure and are specifically stated here.

It can be known that the present invention can be implemented according to the description of the above-mentioned action principle and functional action.

10: load

11: The first power supply

12: Second power supply

13: The third power supply

14: DC power supply

15: Negative input terminal of voltage comparator

16: Positive input terminal of voltage comparator

17: The output terminal of the voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21:First Semiconductor

22:Second semiconductor

23: The third semiconductor

24: Fourth Semiconductor

Claims (10)

An electronic circuit protection device, comprising: a first semiconductor having a drain, a source and a gate, the drain of the first semiconductor providing load connection; A second semiconductor has a drain, a source and a gate, the drain of the second semiconductor is connected to the source of the first semiconductor, the source of the second semiconductor is connected to the negative terminal of the DC power supply ; A third semiconductor having a drain, a source and a gate, the source of the third semiconductor is connected to the source of the first semiconductor, the drain of the third semiconductor is connected to the gate of the first semiconductor; A fourth semiconductor having a drain, a source and a gate, the source of the fourth semiconductor is connected to the source of the second semiconductor, the drain of the fourth semiconductor is connected to the gate of the second semiconductor; A first resistor has a first end and a second end, the second end of the first resistor is connected to the drain of the third semiconductor, the first end of the first resistor is connected to the first power supply use; A second resistor has a first end and a second end, the second end of the second resistor is connected to the drain of the fourth semiconductor, and the first end of the second resistor is connected to the second power supply for; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal, the positive input terminal of the voltage comparator is connected to the source of the first semiconductor, the negative input terminal of the voltage comparator is used to provide the third power supply For connection, the output end of the voltage comparator is connected to the gate of the third semiconductor and the gate of the fourth semiconductor. The electronic circuit protection device described in item 1 of the scope of the patent application, wherein the first semiconductor, the second semiconductor, the third semiconductor and the fourth semiconductor are N-channel metal-oxide-semiconductor field-effect transistors, any of which All semiconductors can be replaced by insulated gate bipolar transistors or N-type transistors. The electronic circuit protection device described in claim 1 of the scope of the patent application, wherein the circuit formed by the second semiconductor, the fourth semiconductor and the voltage comparator has the self-protection function of the second semiconductor. An electronic circuit protection device, comprising: a first semiconductor having a drain, a source and a gate, the drain of the first semiconductor providing load connection; A second semiconductor has a drain, a source and a gate, the drain of the second semiconductor is connected to the source of the first semiconductor, and the source of the second semiconductor is used to connect the negative terminal of the DC power supply ; A third semiconductor having a drain, a source and a gate, the source of the third semiconductor is connected to the source of the first semiconductor, the drain of the third semiconductor is connected to the gate of the first semiconductor; A first resistor has a first end and a second end, the second end of the first resistor is connected to the gate of the first semiconductor, and the first end of the first resistor is connected to the first power supply use; A second resistor has a first end and a second end, the second end of the second resistor is connected to the gate of the second semiconductor, the first end of the second resistor is used to provide a second power supply connection for; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal, the positive input terminal of the voltage comparator is connected to the source of the first semiconductor, the negative input terminal of the voltage comparator is used to provide the third power supply For connection, the output end of the voltage comparator is connected to the gate of the third semiconductor. The electronic circuit protection device described in item 4 of the scope of the patent application, wherein the first semiconductor, the second semiconductor and the third semiconductor are N-channel metal oxide semiconductor field effect transistors, any of which can be insulated Gate bipolar transistors or N-type transistors instead. In the electronic circuit protection device described in item 4 of the scope of application, the second semiconductor can be replaced by a resistance sensor. The electronic circuit protection device described in item 6 of the scope of the patent application, wherein the first end of the resistance sensor is connected to the source of the first semiconductor, and the second end of the resistance sensor is connected to the negative of the voltage comparator power terminal. The electronic circuit protection device as described in item 1 or 4 of the scope of the patent application, wherein the circuit formed by the third semiconductor and the voltage comparator has a self-locking function. The electronic circuit protection device as described in item 1 or 4 of the scope of the patent application, wherein the second semiconductor has the ability to provide the drain-to-source voltage value of the second semiconductor as the overload or short-circuit data of the drain current of the second semiconductor function; or wherein the second semiconductor has the function of providing the collector-emitter voltage value of the second semiconductor as the data of the overload or short circuit of the collector current of the second semiconductor. The electronic circuit protection device described in item 1 or 4 of the scope of patent application, wherein the drain of the first semiconductor is connected to the second terminal of the load, the first terminal of the load is connected to the positive terminal of the DC power supply, and the DC The negative terminal of the power supply is connected to the source of the second semiconductor.

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