TW202339386A - Semiconductor protector - Google Patents

Abstract

The semiconductor protector of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a fourth semiconductor, a first resistor, a second resistor, and a voltage comparator, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.

Description

Semiconductor protector

The semiconductor protector of the present invention is in the field of electronic technology and has the function of protecting the DC power supply when overload or short circuit occurs at both ends of the load during the application of the DC circuit.

The inventor of the semiconductor protector of the present invention searched for relevant semiconductor protection devices and related electronic protector invention documents, and found no identical or similar technologies to the semiconductor protector of the present invention, especially the first semiconductor and the second semiconductor of the present invention. It has the technical means of series connection, self-protection and self-locking functions to achieve the function of protecting the DC power supply when overload or short circuit occurs at both ends of the load in DC circuit applications. It is the world's first invention. Other circuit features are Detailed description is provided in the specification of the present invention.

Purpose of the present invention:

The invention uses a first semiconductor, a second semiconductor, a third semiconductor, a fourth semiconductor, a first resistor, a second resistor and a voltage comparator to protect the DC power supply when overload or short circuit occurs in the DC circuit power supply. .

When the load is short-circuited, the present invention uses the first semiconductor and the second semiconductor to perform an open-circuit action in a very short time, thereby achieving the function of protecting the DC power circuit and avoiding various disasters caused by the load short-circuit.

The first semiconductor and the second semiconductor of the present invention enable the load to receive power from the DC power supply when the invention is turned on, and prevent the load from receiving power from the DC power supply when the invention is turned off.

When the invention is turned on, the conduction of the first semiconductor is the voltage supplied by the first power supply, and the conduction of the second semiconductor is the voltage supply by the second power supply.

Regardless of whether the device is turned on or off, the second semiconductor of the invention can always remain in a conductive state according to application requirements. At this time, the power on or shutdown action of the invention is performed by the first semiconductor.

The present invention has the following characteristics:

1. The first semiconductor and the second semiconductor of the present invention have the characteristics of being connected in series, and are responsible for opening and conducting the DC power supply to supply power to the load.

2. The third semiconductor of the present invention is responsible for controlling the opening and conducting actions of the first semiconductor to achieve the purpose of protecting the DC power circuit when a short circuit occurs at both ends of the load.

3. The fourth semiconductor of the present invention is responsible for controlling the opening and conducting actions of the second semiconductor to achieve the purpose of protecting the DC power circuit when a short circuit occurs at both ends of the load.

4. The present invention provides a first resistor with a current limiting function to prevent the first semiconductor from being damaged due to excessive gate current.

5. The present invention provides a second resistor with the function of limiting current to prevent the second semiconductor from being damaged due to excessive gate current.

6. In the present invention, the circuit composed of the third semiconductor and the voltage comparator has a self-locking (Inter Lock) function.

7. The present invention is provided with a circuit composed of a first semiconductor, a third semiconductor and a voltage comparator, which has the function of self protection of the first semiconductor.

8. The present invention is provided with a circuit composed of a second semiconductor, a fourth semiconductor and a voltage comparator, and has the function of self-protection of the second semiconductor.

9. The first semiconductor of the present invention includes N Channel Metal Oxide Semiconductor Field Effect Transistor (N Channel MOSFET), Insulated Gate Bipolar Transistor (IGBT) and N The three N Type transistors (N Type Transistor) can be selected according to needs.

10. The second semiconductor of the present invention includes N-channel metal oxide semiconductor field effect transistor, insulated gate bipolar transistor and N-type transistor, which can be selected according to the needs.

11. The second semiconductor of the present invention can be replaced by a resistor sensor (Resistor Sensor) to meet application requirements.

12. The third semiconductor of the present invention includes N-channel metal oxide semiconductor field effect transistor, insulated gate bipolar transistor and N-type transistor, which can be selected according to needs.

13. The fourth semiconductor of the present invention includes N-channel metal oxide semiconductor field effect transistor, insulated gate bipolar transistor and N-type transistor, which can be selected according to needs.

10:Load

11:First power supply

12:Second power supply

13:Third power supply

14: DC power supply

15: Negative input terminal of voltage comparator

16: Positive input terminal of voltage comparator

17: Output terminal of voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21:First Semiconductor

22:Second Semiconductor

23:Third Semiconductor

24:Fourth Semiconductor

25: Resistance sensor

Figure 1 is a first embodiment of a semiconductor protector of the present invention.

Figure 2 is a second embodiment of a semiconductor protector of the present invention.

Figure 3 is the third embodiment of the semiconductor protector of the present invention.

Figure 4 is the fourth embodiment of the semiconductor protector of the present invention.

Figure 5 is the fifth embodiment of the semiconductor protector of the present invention.

As shown in FIG. 1 , it is a first embodiment of a semiconductor protector of the present invention. As can be seen from the figure, the semiconductor protector of the present invention includes a first semiconductor 21 , a second semiconductor 22 , a third semiconductor 23 , a fourth semiconductor 24 , and a third semiconductor 21 . A resistor 18 , a second resistor 19 and a voltage comparator 20 .

The positive terminal of the DC power supply 14 is connected to the first terminal of the load 10, the second terminal of the load 10 is connected to the drain D (Drain, D) of the first semiconductor 21, and the source S (Source, S) of the first semiconductor 21 is connected. The drain D of the second semiconductor 22 and the source S of the second semiconductor 22 are connected to the negative terminal of the DC power supply 14, wherein the first semiconductor 21 and the second semiconductor 22 are connected in series.

The gate G (Gate, G) of the first semiconductor 21 is connected to the second end of the first resistor 18 and the drain D of the third semiconductor 23 , and the source S of the third semiconductor 23 is connected to the source S of the first semiconductor 21 Connection, the gate G of the third semiconductor 23 is connected to the output terminal (Output) 17 of the voltage comparator 20, the first terminal of the first resistor 18 and the positive power terminal of the voltage comparator 20 are connected to the positive power of the first power supply 11 The terminal or the positive terminal of the second power supply 12 or another power supply are determined according to the needs and are not limited by themselves.

The positive input terminal (Non-inverting Input) 15 of the voltage comparator 20 is connected to the source S of the first semiconductor 21 and the drain D of the second semiconductor 22, and the negative input terminal (Inverting Input) 16 of the voltage comparator 20 is connected to the third Power supply 13. The third power supply 13 is the reference voltage (Reference Voltage) of the negative input terminal 16 of the voltage comparator 20. The voltage comparator The negative power terminal of 20 is connected to the source S of the second semiconductor 22 and the negative terminal of the DC power supply 14 .

The gate G of the second semiconductor 22 is connected to the drain D of the fourth semiconductor 24 and the second end of the second resistor. The first end of the second resistor is connected to the positive end of the second power supply 12 . The source S is connected to the source S of the second semiconductor 22 , and the gate G of the fourth semiconductor 24 is connected to the output terminal 17 of the voltage comparator 20 .

As shown in Figure 1, when both ends of the load 10 are short-circuited, according to the output characteristics curve table (Output Characteristics) of the second semiconductor 22, when the drain current (Drain Current) of the second semiconductor 22 rises to its corresponding drain When the source voltage (Drain Source Voltage) reaches the reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the fourth semiconductor 24 and the third The gate G of the semiconductor 23, the drain D and the source S of the fourth semiconductor 24 are turned on (Turn On), the drain D and the source S of the second semiconductor 22 are open circuit (Turn Off), and at the same time, the third semiconductor 23 The drain D and source S of the first semiconductor 21 are connected, and the drain D and source S of the first semiconductor 21 are open-circuited. The DC power supply 14 does not supply power to the short-circuit load 10, so that the DC power supply 14 is protected. In the same way, appropriately select the second The conduction voltage value between the drain terminal D and the source terminal S of the semiconductor 22 and the reference voltage value of the negative input terminal 16 of the voltage comparator 20 can also achieve the overload protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to the gate G of the fourth semiconductor 24, the drain D and the source S of the fourth semiconductor 24 are connected at this time, and the drain D and the source S of the second semiconductor 22 are connected. The pole S is open, which means that the second semiconductor 22 has its own protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to At this time, the gate G of the third semiconductor 23 is connected to the drain D and the source S, and the drain D and the source S of the first semiconductor 21 are open circuit. This means that the first semiconductor 21 has its own protection. Function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage and supplies power to the gate G of the third semiconductor 23, at this time, the drain D and the source S of the third semiconductor 23 are connected, and the first power supply 11 supplies power to the first resistor. 18 supplies power to the positive input terminal 15 of the voltage comparator 20 through the drain D and source S of the third semiconductor 23, thereby generating a self-locking function, so that the output terminal 17 of the voltage comparator 20 is maintained to output a positive voltage, and at the same time Because the drain D and the source S of the third semiconductor 23 are electrically connected, the drain D and the source S of the first semiconductor 21 are open-circuited, thereby achieving the function of protecting the DC power supply 14 .

As shown in Figure 2, it is a second embodiment of the semiconductor protector of the present invention. As can be seen from the figure, the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Figure 1 are replaced by N The channel metal oxide semiconductor field effect transistor is changed to an insulated gate bipolar transistor. The other circuit structures are the same as in Figure 1 and will not be described again.

As shown in Figure 2, when both ends of the load 10 are short-circuited, according to the output characteristic curve table of the second semiconductor 22, when the collector current (Collector Current) of the second semiconductor 22 rises to its corresponding collector-emitter voltage ( When the Collector Emitter Voltage reaches a reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the gate G of the fourth semiconductor 24 and the gate of the third semiconductor 23. G, at this time, the collector C and emitter E of the fourth semiconductor 24 are connected, the collector C and emitter E of the second semiconductor 22 are open circuit, and at the same time, the collector C and emitter E of the third semiconductor 23 are connected, and the first The collector C and emitter E of the semiconductor 21 are open-circuited, and the DC power supply 14 does not supply power to the short-circuit load 10. The current power supply 14 is protected; similarly, by appropriately selecting the collector-emitter voltage value between the collector C and the emitter E of the second semiconductor 22 and cooperating with the reference voltage value of the negative input terminal 16 of the voltage comparator 20, it can also be achieved Overload protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to the gate G of the fourth semiconductor 24, the collector C and the emitter E of the fourth semiconductor 24 are conductive, and the collector C and emitter E of the second semiconductor 22 are connected. The pole E is open, which means that the second semiconductor 22 has its own protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to the gate G of the third semiconductor 23, the collector C and the emitter E of the third semiconductor 23 are conductive, and the collector C and emitter E of the first semiconductor 21 are connected. The pole E is open, which means that the first semiconductor 21 has its own protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage and supplies power to the gate G of the third semiconductor 23, at this time, the collector C and the emitter E of the third semiconductor 23 are connected, and the first power supply 11 supplies power to the first resistor. 18 supplies power to the positive input terminal 15 of the voltage comparator 20 through the collector C and emitter E of the third semiconductor 23, thereby generating a self-locking function, so that the output terminal 17 of the voltage comparator 20 is maintained to output a positive voltage, and at the same time Because the collector C and the emitter E of the third semiconductor 23 are electrically connected, the collector C and the emitter E of the first semiconductor 21 are opened, thus achieving the function of protecting the DC power supply 14 .

It can be seen from the above that the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Figure 1 are changed from N-channel metal oxide semiconductor field effect transistors to insulated gate bipolar transistors. The principle is the same, and the function of protecting the DC power supply 14 when the load 10 is short-circuited is also the same.

As can be seen from the above, the first semiconductor 21 and the second semiconductor in FIGS. 1 and 2 The semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 can be changed from N-channel metal oxide semiconductor field effect transistors to insulated gate bipolar transistors, or the first semiconductor 21 and the third semiconductor 21 in Figure 1 and Figure 2 can be changed. The second semiconductor 22 , the third semiconductor 23 and the fourth semiconductor 24 are partially reused according to their needs. For example, the first semiconductor 21 and the second semiconductor 22 in FIG. 1 are changed from N-channel metal oxide semiconductor field effect transistors to insulating gates. Bipolar transistors can be substituted according to your needs without limitation.

As shown in Figure 3, it is the third embodiment of the semiconductor protector of the present invention. As can be seen from the figure, the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Figure 1 are formed by N The channel metal oxide semiconductor field effect transistor is changed to an N-type transistor, and other circuit structures are the same as in Figure 1 and will not be described again.

As shown in Figure 3, when both ends of the load 10 are short-circuited, according to the output characteristic curve table of the second semiconductor 22, when the collector current (Collector Current) of the second semiconductor 22 rises to its corresponding collector-emitter voltage ( When the Collector Emitter Voltage reaches a reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the base (Base, B) B of the fourth semiconductor 24 and the second The base B of the third semiconductor 23, the collector C and the emitter E of the fourth semiconductor 24 are connected at this time, the collector C and the emitter E of the second semiconductor 22 are open circuit, and the collector C and emitter E of the third semiconductor 23 are at the same time. E is turned on, the collector C and the emitter E of the first semiconductor 21 are open-circuited, and the DC power supply 14 does not supply power to the short-circuit load 10, so that the DC power supply 14 is protected; similarly, the collector C and the emitter E of the second semiconductor 22 are appropriately selected. The collector-emitter voltage value between the emitter E and the reference voltage value of the negative input terminal 16 of the voltage comparator 20 can also achieve the overload protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to The base B of the fourth semiconductor 24, at this time, the collector C and the emitter E of the fourth semiconductor 24 are connected, and the collector C and the emitter E of the second semiconductor 22 are open circuit. This means that the second semiconductor 22 has its own protection. Function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to the base B of the third semiconductor 23, the collector C and the emitter E of the third semiconductor 23 are conductive, and the collector C and emitter E of the first semiconductor 21 are connected. The pole E is open, which means that the first semiconductor 21 has its own protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage and supplies power to the base B of the third semiconductor 23, at this time, the collector C and the emitter E of the third semiconductor 23 are connected, and the first power supply 11 supplies power to the first resistor. 18 supplies power to the positive input terminal 15 of the voltage comparator 20 through the collector C and emitter E of the third semiconductor 23, thereby generating a self-locking function, so that the output terminal 17 of the voltage comparator 20 is maintained to output a positive voltage, and at the same time Because the collector C and the emitter E of the third semiconductor 23 are electrically connected, the collector C and the emitter E of the first semiconductor 21 are opened, thus achieving the function of protecting the DC power supply 14 .

It can be seen from the above that the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Figure 1 are changed from N-channel metal oxide semiconductor field effect transistors to N-type transistors, and their operating principles are the same. The function of protecting the DC power supply 14 when the load 10 is short-circuited is also the same.

As shown in Figure 4, it is the fourth embodiment of the semiconductor protector of the present invention. It can be seen from the figure that the fourth semiconductor 24 in Figure 1 is removed. Therefore, the second semiconductor 22 does not have its own protection function. Other circuit structures They are all the same as Figure 1 and will not be described in detail.

It can be seen from FIG. 4 that because the fourth semiconductor 24 in FIG. 1 is removed, only the drain-source voltage value of the second semiconductor 22 is used as the drain voltage. The purpose of protecting the DC power supply 14 is to protect the DC power supply 14 from overload or short-circuit data. At the same time, because the fourth semiconductor 24 is removed, the first semiconductor 21 is responsible for the conduction and opening of the DC power supply 14 to the load 10, and its operating principle They are all the same as Figure 1 and will not be described in detail.

As shown in Figure 5, it is the fifth embodiment of the semiconductor protector of the present invention. It can be seen from the figure that the second semiconductor 22 in Figure 4 is removed and replaced by a resistance sensor 25. The resistance sensor 25 The first terminal is connected to the source S of the first semiconductor 21, and the second terminal of the resistance sensor 25 is connected to the negative power terminal of the voltage comparator 20. The other circuit structures are the same as in Figure 4 and will not be described again.

As shown in FIG. 5 , it can be seen from the figure that the second semiconductor 22 in FIG. 4 is removed and replaced by a resistive sensor 25 , and the drain electrodes of the first semiconductor 21 at both ends of the resistive sensor 25 are used. Current and voltage drop, when the drain current of the first semiconductor 21 rises to the point where the voltage across the resistance sensor 25 reaches a reference voltage higher than the negative input terminal 16 of the voltage comparator 20, the output terminal 17 of the voltage comparator 20 outputs a The positive voltage is supplied to the gate G of the third semiconductor 23, so that the drain D and the source S of the third semiconductor 23 are connected. At this time, the first semiconductor 21 is open circuit, thereby achieving the purpose of protecting the DC power supply 14.

It can be seen from the above that the first semiconductor 21, the second semiconductor 22, the third semiconductor 23 and the fourth semiconductor 24 in Figure 1 are partially changed from N-channel metal oxide semiconductor field effect transistors to insulated gate bipolar according to their needs. transistor or N-type transistor substitution without self-limiting.

As can be seen from the above, the first power supply 11, the second power supply 12 and the third power supply 13 in Figures 1, 2, 3, and 4 are all marked with dots for the sake of simplicity, while in Figure 5 they are not marked with dots. The second power supply 12. Anyone with knowledge in the industry knows that all power supplies have positive terminals and negative terminals, which are not marked in the figure and are specially stated here.

From the description of the above operating principles and functional actions, it can be seen that the present invention can be implemented accordingly.

10:Load

11:First power supply

12:Second power supply

13:Third power supply

14: DC power supply

15: Negative input terminal of voltage comparator

16: Positive input terminal of voltage comparator

17: Output terminal of voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21:First Semiconductor

22:Second Semiconductor

23:Third Semiconductor

24:Fourth Semiconductor

Claims (10)

A semiconductor protector including: A first semiconductor having a drain, a source and a gate, the drain of the first semiconductor being used to provide load connection; A second semiconductor has a drain, a source and a gate. The drain of the second semiconductor is connected to the source of the first semiconductor. The source of the second semiconductor is used to connect the negative terminal of the DC power supply. ; A third semiconductor having a drain, a source and a gate, the source of the third semiconductor is connected to the source of the first semiconductor, and the drain of the third semiconductor is connected to the gate of the first semiconductor; A fourth semiconductor having a drain, a source and a gate, the source of the fourth semiconductor is connected to the source of the second semiconductor, and the drain of the fourth semiconductor is connected to the gate of the second semiconductor; A first resistor having a first end and a second end. The second end of the first resistor is connected to the drain of the third semiconductor. The first end of the first resistor is for providing a first power connection. purpose; A second resistor has a first end and a second end. The second end of the second resistor is connected to the drain of the fourth semiconductor. The first end of the second resistor is for providing a second power connection. purpose; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal. The positive input terminal of the voltage comparator is connected to the source of the first semiconductor. The negative input terminal of the voltage comparator provides a third power supply. For connection purposes, the output terminal of the voltage comparator is connected to the gate of the third semiconductor and the gate of the fourth semiconductor. As for the semiconductor protector described in item 1 of the patent application, the circuit formed by the first semiconductor, the third semiconductor and the voltage comparator has the function of protecting the first semiconductor itself. The semiconductor protector described in item 1 of the patent application, wherein the second semiconductor, the fourth semiconductor and the voltage comparator are composed of The circuit has the function of self-protection of the second semiconductor. A semiconductor protector including: A first semiconductor having a drain, a source and a gate, the drain of the first semiconductor being used to provide load connection; A second semiconductor has a drain, a source and a gate. The drain of the second semiconductor is connected to the source of the first semiconductor. The source of the second semiconductor is connected to the negative terminal that provides DC power. use; A third semiconductor having a drain, a source and a gate, the source of the third semiconductor is connected to the source of the first semiconductor, and the drain of the third semiconductor is connected to the gate of the first semiconductor; A first resistor has a first end and a second end. The second end of the first resistor is connected to the gate of the first semiconductor. The first end of the first resistor is for providing a first power connection. purpose; A second resistor has a first end and a second end. The second end of the second resistor is connected to the gate of the second semiconductor. The first end of the second resistor is for providing a second power connection. purpose; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal. The positive input terminal of the voltage comparator is connected to the source of the first semiconductor. The negative input terminal of the voltage comparator provides a third power supply. For connection purposes, the output terminal of the voltage comparator is connected to the gate of the third semiconductor. The semiconductor protector described in Item 4 of the patent application, wherein the second semiconductor has the function of providing the drain-source voltage value of the second semiconductor as data indicating overload or short circuit of the drain current of the second semiconductor. A semiconductor protector including: A first semiconductor having a drain, a source and a gate, the drain of the first semiconductor being used to provide load connection; A third semiconductor having a drain, a source and a gate, the The source electrode of the third semiconductor is connected to the source electrode of the first semiconductor, and the drain electrode of the third semiconductor is connected to the gate electrode of the first semiconductor; A first resistor has a first end and a second end. The second end of the first resistor is connected to the gate of the first semiconductor. The first end of the first resistor is for providing a first power connection. purpose; A resistive sensor has a first terminal and a second terminal. The first terminal of the resistive sensor is connected to the source of the first semiconductor. The second terminal of the resistive sensor is a negative voltage that provides a DC power supply. for terminal connection purposes; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal. The positive input terminal of the voltage comparator is connected to the source of the first semiconductor. The negative input terminal of the voltage comparator provides a third power supply. For connection purposes, the output terminal of the voltage comparator is connected to the gate of the third semiconductor. For the semiconductor protector described in Item 6 of the patent application, the voltage drop value across the resistance sensor has the function of providing data on overload or short circuit of the drain current of the first semiconductor. For the semiconductor protector described in Item 1, 4 or 6 of the patent application, the circuit formed by the third semiconductor and the voltage comparator has a self-locking function. The semiconductor protector described in Item 1, 4 or 6 of the patent application, wherein the first semiconductor, the second semiconductor, the third semiconductor and the fourth semiconductor are N-channel metal oxide semiconductor field effect transistors, Either semiconductor can be replaced by an insulated gate bipolar transistor or an N-type transistor. For example, the semiconductor protector described in Item 1, 4 or 6 of the patent application, wherein the drain of the first semiconductor is connected to the second terminal of the load, the first terminal of the load is connected to the positive terminal of the DC power supply, and the The negative terminal of the DC power supply is connected to the source of the second semiconductor or the second terminal of the resistive sensor.

Images