TW202404218A - Semiconductor protector - Google Patents

Abstract

The semiconductor protector of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a first resistor, a second resistor, a third resistor, a fourth resistor, a first diode and a voltage comparator, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.

Description

Semiconductor protector

The semiconductor protector of the present invention is in the field of electronic technology and has the function of protecting the DC power supply when overload or short circuit occurs at both ends of the load during the application of the DC circuit.

The inventor of the semiconductor protector of the present invention searched for relevant semiconductor protection devices and related electronic protector invention documents, and found no identical or similar technologies to the semiconductor protector of the present invention, especially the first semiconductor and the second semiconductor of the present invention. It has the technical means of series connection, self-protection and self-locking functions to achieve the function of protecting the DC power supply when overload or short circuit occurs at both ends of the load in DC circuit applications. It is the world's first invention. Other circuit features are Detailed description is provided in the specification of the present invention.

Purpose of the present invention:

1. The present invention uses the first semiconductor, the second semiconductor, the third semiconductor, the first resistor, the second resistor, the third resistor, the fourth resistor, the first diode and the voltage comparator to achieve When a load overload or short circuit occurs in the DC circuit power supply, the DC power supply gets protect.

2. When the load is short-circuited, the present invention uses the first semiconductor to perform an open-circuit action in a very short time, thereby achieving the function of protecting the DC power circuit and avoiding various disasters caused by the load short-circuit.

3. The first semiconductor of the present invention enables the load to receive power from the DC power supply when the invention is turned on, and prevents the load from receiving power from the DC power supply when the invention is turned off.

4. When the present invention is turned on, the first semiconductor is turned on (On) to supply voltage from the first power supply.

5. The second semiconductor of the present invention remains in a conductive state no matter when it is turned on or off. At this time, the turning on or off action of the present invention is performed by the first semiconductor.

The present invention has the following characteristics:

1. The first semiconductor and the second semiconductor of the present invention have the characteristics of being connected in series, and the first semiconductor is responsible for the open circuit (Off) and conduction of the DC power supply to supply power to the load.

2. The second semiconductor of the present invention provides drain-source on-state resistance, which is generated by the drain current of the first semiconductor passing through the second semiconductor during overload or short circuit. The function of data of drain-source voltage.

3. The third semiconductor of the present invention is responsible for controlling the opening and conducting actions of the first semiconductor to achieve the purpose of protecting the DC power circuit when a short circuit occurs at both ends of the load.

4. The present invention provides a first resistor with a current limiting function to prevent the first semiconductor from being damaged due to excessive gate current.

5. The present invention provides a second resistor with the function of limiting current to prevent the second semiconductor from being damaged due to excessive gate current. body.

6. The present invention provides a third resistor with the function of limiting current to prevent excessive current at the positive input end of the voltage comparator from damaging the voltage comparator.

7. The present invention is provided with a fourth resistor with a voltage feedback (Feed Back) function, which can feed back the voltage output by the output terminal of the voltage comparator to the voltage comparator through the fourth resistor and the first diode. Positive input terminal.

8. The present invention is provided with a first diode with the function of conducting current in one direction, so that the voltage output by the output terminal of the voltage comparator can be supplied to the positive input terminal of the voltage comparator in one direction.

9. The present invention is provided with a circuit composed of a first semiconductor, a third semiconductor and a voltage comparator, so that the first semiconductor has the function of self protection.

10. The present invention is provided with a voltage comparator, a fourth resistor and a first diode, so as to enable the voltage comparator to have a self-locking (Inter Lock) function.

11. The first semiconductor of the present invention includes both N Channel Metal Oxide Semiconductor Field Effect Transistor (N Channel MOSFET) and Insulated Gate Bipolar Transistor (IGBT). You can choose according to your needs.

12. The second semiconductor of the present invention is an N-channel metal oxide semiconductor field effect transistor.

13. The second semiconductor of the present invention can be replaced by a resistor sensor (Resistor Sensor) to meet application requirements.

14. The third semiconductor of the present invention includes N-channel metal oxide semiconductor field effect transistor and insulated gate bipolar transistor, which can be selected according to needs.

10:Load

11:First power supply

12:Second power supply

13:Third power supply

14: DC power supply

15: Positive input terminal of voltage comparator

16: Negative input terminal of voltage comparator

17: Output terminal of voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21:First Semiconductor

22:Second Semiconductor

23:Third Semiconductor

24:Third resistor

25: The fourth resistor

26:First diode

27: Resistance sensor

Figure 1 is a first embodiment of a semiconductor protector of the present invention.

Figure 2 is a second embodiment of a semiconductor protector of the present invention.

As shown in Figure 1, it is a first embodiment of a semiconductor protector of the present invention. As can be seen from the figure, the semiconductor protector of the present invention includes a first semiconductor 21, a second semiconductor 22, a third semiconductor 23, a first resistor 18, The second resistor 19 , the third resistor 24 , the fourth resistor 25 , the first diode 26 and the voltage comparator 20 .

The drain D (Drain, D) of the first semiconductor 21 is used to provide the first terminal connection of the external load 10. The first terminal of the first resistor 18 is used to provide the connection of the external first power supply 11. The second terminal The source S (Source, S) of the semiconductor 22 is used to connect the negative terminal of the DC power supply 14, and the positive terminal of the DC power supply 14 is connected to the second terminal of the load 10, where the first semiconductor 21 and the second semiconductor 22 form a series connection. connection.

The gate G (Gate, G) of the first semiconductor 21 is connected to the second end of the first resistor 18 and the drain D of the third semiconductor 23 , and the source S of the third semiconductor 23 is connected to the source S of the first semiconductor 21 Connection, the gate G of the third semiconductor 23 is connected to the output terminal (Output) 17 of the voltage comparator 20, the first terminal of the first resistor 18 and the positive power terminal of the voltage comparator 20 are connected to the positive power of the first power supply 11 The terminal or the positive terminal of the second power supply 12 or another power supply are determined according to the needs and are not limited by themselves.

The positive input terminal (Non-inverting Input) 15 of the voltage comparator 20 is connected to the first terminal of the third resistor 24 and the cathode terminal (Cathode) of the first diode 26, and the anode terminal (Anode) of the first diode 26 is connected. ) is connected to the second terminal of the fourth resistor 25 and the second terminal of the third resistor 24 The source S of the first semiconductor 21 is connected, the first end of the fourth resistor 25 is connected to the output end 17 of the voltage comparator 20, the negative input end (Inverting Input) 16 of the voltage comparator 20 is connected to the third power supply 13, and The power supply 13 is the reference voltage (Reference Voltage) of the negative input terminal 16 of the voltage comparator 20. The negative power terminal of the voltage comparator 20 is connected to the source S of the second semiconductor 22 and the negative terminal of the DC power supply 14. The positive terminal of the voltage comparator 20 is The power terminal is connected to the positive terminal of the first power supply 11 or the positive terminal of the second power supply 12 .

The gate G of the second semiconductor 22 is connected to the second terminal of the second resistor 19 , and the first terminal of the second resistor 19 is connected to the positive terminal of the second power supply 12 .

As shown in Figure 1, when both ends of the load 10 are short-circuited, according to the drain-source conduction state resistance of the second semiconductor 22, when the drain current (Drain Current) of the first semiconductor 21 rises to the phase resistance of the second semiconductor 22, The corresponding drain-source voltage reaches the positive input terminal 15 of the voltage comparator 20 through the third resistor 24. If the drain-source voltage is higher than the reference voltage of the negative input terminal 16 of the voltage comparator 20, the voltage comparator 20 The output terminal 17 outputs a positive voltage to supply power to the first terminal of the fourth resistor 25 and the gate G of the third semiconductor 23. At this time, the fourth resistor 25 supplies power to the voltage comparator 20 through the first diode 26. The positive input terminal 15 keeps the output terminal 17 of the voltage comparator 20 outputting a positive voltage, so that the voltage comparator 20 has a self-locking function. At the same time, the drain D and the source S of the third semiconductor 23 are conductive, and the first semiconductor 21 The drain D and the source S are open circuit, so that the first semiconductor 21 has its own protection function. At this time, the DC power supply 14 does not supply power to the short-circuit load 10, so that the DC power supply 14 is protected. Similarly, the second semiconductor is appropriately selected. The drain-source on-state resistance between the drain D and the source S of 22 can also be reached by matching the reference voltage of the negative input terminal 16 of the voltage comparator 20 to the overload protection function.

When the output terminal 17 of the voltage comparator 20 outputs a positive voltage to the gate G of the third semiconductor 23, the drain D and the source S of the third semiconductor 23 are connected, and the drain D and the source of the first semiconductor 21 are connected. The pole S is open, which means that the first semiconductor 21 has its own protection function.

As shown in Figure 2, it is the second embodiment of the semiconductor protector of the present invention. As can be seen from the figure, the first semiconductor 21 and the third semiconductor 23 in Figure 1 are changed from N-channel metal oxide semiconductor field effect transistors. Insulated gate bipolar transistor, the circuit of the second semiconductor 22 is replaced by a resistance sensor 27, the first end of the resistance sensor 27 is connected to the emitter E of the first semiconductor 21, and the resistance sensor 27 The second terminal is connected to the negative power terminal of the voltage comparator 20, and other circuit structures are the same as in Figure 1 and will not be described again.

As shown in Figure 2, the collector C (Collector, C) of the first semiconductor 21 is used to provide a first terminal connection for the external load 10, and the first terminal of the first resistor 18 is used to provide a connection for the external first power supply 11. For this purpose, the second end of the resistance sensor 27 is used to connect the negative end of the DC power supply 14, and the positive end of the DC power source 14 is connected to the second end of the load 10, in which the emitter E (Emitter) of the first semiconductor 21 , E) is connected to the first end of the resistance sensor 27, and the first semiconductor 21 and the resistance sensor 27 are connected in series.

As shown in Figure 2, when both ends of the load 10 are short-circuited, the voltage across the resistance sensor 27 reaches the positive input terminal 15 of the voltage comparator 20 through the third resistor 24. If its voltage is higher than the voltage comparator 20 When the reference voltage of the negative input terminal 16 is set, the output terminal 17 of the voltage comparator 20 outputs a positive voltage to supply power to the fourth resistor 25 and the gate G of the third semiconductor 23. At this time, the fourth resistor 25 passes through the first and second resistors. The pole body 26 supplies power to the positive input terminal 15 of the voltage comparator 20 so that The output terminal 17 of the voltage comparator 20 keeps outputting a positive voltage, which means that the voltage comparator 20 has a self-locking function. At the same time, the collector C and the emitter E of the third semiconductor 23 are connected, and the collector C of the first semiconductor 21 is connected. Open circuit with the emitter E, so that the first semiconductor 21 has its own protection function. At this time, the DC power supply 14 does not supply power to the short-circuit load 10, so that the DC power supply 14 is protected. In the same way, the resistor sensor 27 is appropriately selected. The resistance value, in conjunction with the reference voltage value of the negative input terminal 16 of the voltage comparator 20, can also achieve the overload protection function.

It can be seen from the above that the function of the resistance sensor 27 is to convert the collector current of the first semiconductor 21 into a voltage as a reference data for the overload or short-circuit current of the load 10. Therefore, the resistance sensor 27 can also be used. A shunt with effective resistance characteristics or a circuit with equivalent resistance characteristics, such as a circuit with one or more resistors connected in series, a circuit with multiple resistors connected in parallel, or a circuit with multiple resistors connected in series and parallel, due to its operating principle Same, not self-limiting.

From the above, it can be seen that the second semiconductor 22 in Figure 1 can use the supply voltage of the second power supply 12 to control the drain-source on-resistance of the second semiconductor 22, while the resistance sensor 27 in Figure 2 can only provide a single resistance value. , the choice between the two depends on the actual application requirements and is not self-limiting.

It can be seen from the above that the first diode 26 in FIGS. 1 and 2 has the function of conducting current in one direction. If the output terminal 17 of the voltage comparator 20 has the function of conducting current in one direction, then the first diode 26 The connection can be omitted. In this case, the second end of the fourth resistor 25 can be connected to the positive input end 15 of the voltage comparator 20 .

From the above, it can be seen that the first semiconductor 21 and the third semiconductor 23 in Figure 1 can be partially or completely replaced by N-channel metal oxide semiconductor field effect transistors and insulated gate bipolar transistors according to their needs. Because its action principle is the same, it is not self-limiting.

As can be seen from the above, the first semiconductor 21 and the third semiconductor 23 in Figure 2 can be partially or completely replaced by insulated gate bipolar transistors and N-channel metal oxide semiconductor field effect transistors according to their needs. The principles are the same, but not self-limiting.

From the above, it can be seen that the first power supply 11, the second power supply 12 and the third power supply 13 in Figure 1 are marked with dots for the sake of simplicity of illustration, while in Figure 2 the second power supply 12 is not connected. Everyone knows that a power supply has a positive terminal and a negative terminal, which are not marked in the figure, so I would like to make a special statement here.

From the description of the above operating principles and functional actions, it can be seen that the present invention can be implemented accordingly.

10:Load

11:First power supply

12:Second power supply

13:Third power supply

14: DC power supply

15: Positive input terminal of voltage comparator

16: Negative input terminal of voltage comparator

17: Output terminal of voltage comparator

18: First resistor

19: Second resistor

20: Voltage comparator

21:First Semiconductor

22:Second Semiconductor

23:Third Semiconductor

24:Third resistor

25: The fourth resistor

26:First diode

Claims (10)

A semiconductor protector including: A first semiconductor has a drain, a source and a gate. The drain of the first semiconductor has the function of providing a first terminal connection for the load. The second terminal of the load is connected to the positive terminal of the DC power supply. ; A second semiconductor has a drain, a source and a gate. The drain of the second semiconductor is connected to the source of the first semiconductor. The source of the second semiconductor has a negative terminal that provides the DC power supply. The function of connection; A third semiconductor having a drain, a source and a gate, the source of the third semiconductor is connected to the source of the first semiconductor, and the drain of the third semiconductor is connected to the gate of the first semiconductor; A first resistor has a first end and a second end. The second end of the first resistor is connected to the gate of the first semiconductor. The first end of the first resistor is provided with a first power supply. The function of connection; A second resistor has a first end and a second end. The second end of the second resistor is connected to the gate of the second semiconductor. The first end of the second resistor is provided with a second power supply. The function of connection; A third resistor has a first end and a second end, and the second end of the third resistor is connected to the source of the first semiconductor and the drain of the second semiconductor; a fourth resistor, having a first end and a second end, and having a voltage feedback function; A first diode having an anode terminal and a cathode terminal, the anode terminal of the first diode is connected to the second terminal of the fourth resistor, and the cathode terminal of the first diode is connected to the third resistor The first end has the function of conducting current in one direction; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal, the positive input terminal of the voltage comparator is connected to the third resistor The first terminal of the voltage comparator is connected to the cathode terminal of the first diode. The output terminal of the voltage comparator is connected to the first terminal of the fourth resistor and the gate of the third semiconductor. The negative input terminal of the voltage comparator is Has the function of providing a third power connection. In the semiconductor protector described in Item 1 of the patent application, the drain-source voltage of the second semiconductor has the function of providing overload or short-circuit data of the drain current of the first semiconductor. The semiconductor protector described in item 1 of the patent application, wherein the first semiconductor is an N-channel metal oxide semiconductor field effect transistor, which can be replaced by an insulated gate bipolar transistor, and the third semiconductor is an N-channel The metal oxide semiconductor field effect transistor can be replaced by an insulated gate bipolar transistor, and the second semiconductor is an N-channel metal oxide semiconductor field effect transistor. A semiconductor protector including: A first semiconductor has a collector, an emitter and a gate. The collector of the first semiconductor has the function of providing a first terminal connection for a load. The second terminal of the load is connected to the positive terminal of the DC power supply. ; A third semiconductor having a collector, an emitter and a gate, the emitter of the third semiconductor is connected to the emitter of the first semiconductor, and the collector of the third semiconductor is connected to the gate of the first semiconductor; A first resistor has a first end and a second end. The second end of the first resistor is connected to the gate of the first semiconductor. The first end of the first resistor is provided with a first power supply. The function of connection; a third resistor having a first end and a second end, the second end of the third resistor being connected to the emitter of the first semiconductor; a fourth resistor, having a first end and a second end, and having a voltage feedback function; A first diode has an anode terminal and a cathode terminal. The anode terminal of the first diode is connected to the second terminal of the fourth resistor. The cathode end of the electrode body is connected to the first end of the third resistor; A resistance sensor has a first end and a second end. The first end of the resistance sensor is connected to the emitter of the first semiconductor and the second end of the third resistor. The resistance sensor The second terminal has the function of providing the negative terminal connection of the DC power supply; and A voltage comparator has a positive input terminal, a negative input terminal and an output terminal. The positive input terminal of the voltage comparator is connected to the first terminal of the third resistor and the cathode terminal of the first diode. The output terminal of the voltage comparator is connected to the first terminal of the fourth resistor and the gate of the third semiconductor, and the negative input terminal of the voltage comparator has the function of providing a third power connection. For the semiconductor protector described in Item 4 of the patent application, the voltage drop across the resistance sensor has the function of providing overload or short-circuit data of the collector current of the first semiconductor. For the semiconductor protector described in item 4 of the patent application, the resistance sensor is a shunt or a circuit with equivalent resistance characteristics. For the semiconductor protector described in item 4 of the patent application, the first semiconductor is an insulating gate bipolar transistor, which can be replaced by an N-channel metal oxide semiconductor field effect transistor, and the third semiconductor is an insulating gate bipolar transistor. Polar bipolar transistors can be replaced by N-channel metal oxide semiconductor field effect transistors. For example, in the semiconductor protector described in Item 1 or 4 of the patent application, if the output end of the voltage comparator has the function of conducting current in one direction, the first diode can be omitted and only the third diode can be omitted. The second terminal of the four resistors is connected to the positive input terminal of the voltage comparator. For the semiconductor protector described in Item 1 or 4 of the patent application, the circuit formed by the fourth resistor, the first diode and the voltage comparator enables the voltage comparator to have a self-locking function. For example, the semiconductor protector described in item 1 or 4 of the patent application scope has The circuit formed by the first semiconductor, the third semiconductor and the voltage comparator enables the first semiconductor to have its own protection function.

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