TW202213891A - Dc short circuits protection device - Google Patents
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本發明直流短路保護裝置,具有在直流電路應用過程中負載兩端發生過載或短路之保護功能及其包括有第一半導體、第二半導體、第一電阻器、第二電阻器、第三電阻器及光電耦合器之電子技術領域。 The DC short-circuit protection device of the present invention has the protection function of overload or short-circuit at both ends of the load during the application of the DC circuit, and includes a first semiconductor, a second semiconductor, a first resistor, a second resistor, and a third resistor. And the field of electronic technology of optocoupler.
請參閱台灣專利證書號發明第I 583089號「電池放電保護裝置」,如圖1所示,當充電裝置100對電池11執行充電動作時,充電裝置100的正電端G+供給正電壓於第一集極電阻15到第一半導體12的閘極端G,此時第一半導體12的源極S及汲極D導通,其充電電流經過電池11的正電端,電池11的負電端,第一半導體12的源極S,第一半導體12的漏極D,而回到充電裝置100的負電端G-,而達成電池11的充電動作。
Please refer to Taiwan Patent Certificate No. Invention No. I 583089 “Battery Discharge Protection Device”. As shown in FIG. 1 , when the
如圖1所示,當充電動作完成時,將充電裝置100改為負載200,電池11對負載200執行放電動作,此時電池11的正電端供給正電壓於第一集極電阻15到第一半導體12的閘極G,因此第一半導體12的源極S及汲極D導通,其放電電流經過負載200
的正電端,負載200的負電端,第一半導體12的汲極D,第一半導體12的源極S,而回到電池11的負電端,而達成電池11的放電動作。
As shown in FIG. 1 , when the charging operation is completed, the
如圖1所示,當電池11對負載200執行放電動作中發生負載200短路時,第二半導體14的基極B的電位為電路正電位,因此第二半導體14的基極B的電位高於射極E而使第二半導體14導通,此時第一半導體12的閘極G與源極S的電位相等,因此第一半導體12開路,此時第一半導體12的汲極電流中止,以保護電池11因發生負載200短路而造成電池11的損壞,若欲解除第二半導體14的導通狀態只需將短路原因去除,即可解除第二半導體14的導通狀態,而恢復第一半導體12的正常狀態,其缺點如下:
As shown in FIG. 1 , when the
1.將負載200兩端造成短路的原因解除後,要設一個開關將負載200開路(Off),再將所設的開關導通(On)電池11才能再供電於負載200,因此造成增加裝置成本及應用上之不便。
1. After removing the cause of the short circuit at both ends of the
2.若要恢復正常的電路功能,將負載200兩端造成短路的原因解除後,再重新將電池11送電,也要增加一個開關,造成增加裝置成本及應用上之不便。
2. To restore the normal circuit function, after removing the cause of the short circuit between the two ends of the
本發明的目的: Purpose of the present invention:
本發明應用第一半導體、第二半導體、第一電阻器、第二電阻器、第三電阻器及光電耦合器,達到能在直流電路供電中發生負載過載或短路時直流電源得到保護。 The present invention applies the first semiconductor, the second semiconductor, the first resistor, the second resistor, the third resistor and the optocoupler, so that the DC power supply can be protected when the load is overloaded or short-circuited in the DC circuit power supply.
當負載發生短路時,本發明應用第二半導體能在極 短之時間內執行第一半導體開路動作,達到保護直流電源電路之功能及避免因負載短路而引起之各種災害。 When the load is short-circuited, the present invention uses the second semiconductor to The first semiconductor open-circuit action is performed in a short time to achieve the function of protecting the DC power supply circuit and avoid various disasters caused by short-circuit of the load.
本發明光電耦合器執行本發明在開機時,使第二半導體執行延時動作,達到短路原因排除時不必重新再送直流電源及不必負載兩端的短路原因去除後,需要一個開關執行開路與導通的動作。 When the photocoupler of the present invention implements the present invention, the second semiconductor performs a delay action when the power is turned on. When the cause of the short circuit is eliminated, it is not necessary to re-supply the DC power supply and it is not necessary to remove the cause of the short circuit at both ends of the load, and a switch is required to perform the action of opening and conducting.
本發明有下列之特徵: The present invention has the following features:
1.本發明之第一半導體其負責直流電源之開路與導通供電於負載。 1. The first semiconductor of the present invention is responsible for the open circuit and conduction of the DC power supply to supply power to the load.
2.本發明之第二半導體,其負責控制第一半導體之開路與導通動作,以達到負載兩端發生短路時保護直流電源電路的目的。 2. The second semiconductor of the present invention is responsible for controlling the open-circuit and conduction actions of the first semiconductor, so as to achieve the purpose of protecting the DC power supply circuit when a short circuit occurs at both ends of the load.
3.本發明設有第一電阻器具有限制電流的功能,以防止第一半導體因為閘極或基極過大電流而損壞第一半導體。 3. In the present invention, the first resistor has the function of limiting current to prevent the first semiconductor from being damaged due to excessive gate or base current.
4.本發明設有第二電阻器具有限制電流的功能,以防止光電耦合器的發光二極體發生過大電流而損壞光電耦合器。 4. The present invention is provided with a second resistor which has the function of limiting current, so as to prevent the photocoupler from being damaged by excessive current generated in the light emitting diode of the photocoupler.
5.本發明設有第三電阻器具有限制電流的功能,以防止第二半導體因為閘極或基極過大電流而損壞第二半導體。 5. In the present invention, the third resistor has the function of limiting the current, so as to prevent the second semiconductor from being damaged due to excessive gate or base current.
6.本發明之光電耦合器,負責控制第二半導體之開路與導通動作時間,以達到啟動第一半導體導通之動作目的。 6. The optocoupler of the present invention is responsible for controlling the open-circuit and conduction time of the second semiconductor, so as to achieve the purpose of initiating the conduction of the first semiconductor.
7.本發明之第一半導體包括N通道金屬氧化半導體場效電晶體(N Channel Metal Oxide Semiconductor Field Effect Transistor,N Channel MOSFET)、N型電晶體(N Type Transistor)或絕緣閘極雙極電晶體 (Insulated Gate Bipolar Transistor,IGBT)三者可以根據需求自行選用。 7. The first semiconductor of the present invention includes an N Channel Metal Oxide Semiconductor Field Effect Transistor (N Channel MOSFET), an N Type Transistor or an Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) can be selected according to the needs.
8.本發明之第二半導體包括N通道金屬氧化半導體場效電晶體、N型電晶體或絕緣閘極雙極電晶體三者可以根據需求自行選用。 8. The second semiconductor of the present invention includes an N-channel metal oxide semiconductor field effect transistor, an N-type transistor or an insulated gate bipolar transistor, which can be selected according to requirements.
9.本發明之光電耦合器包括電晶體輸出型(Transistor Output)、達靈頓複合電晶體輸出型(Darlington Phototransistor Output)或光電繼電器(Potorelays),三者可以根據需求自行選用。 9. The optocoupler of the present invention includes Transistor Output, Darlington Phototransistor Output or Potorelays, which can be selected according to requirements.
10:直流電源 10: DC power supply
11:第一開關 11: The first switch
12:負載 12: Load
13:第二開關 13: Second switch
20:本發明直流短路保護裝置 20: DC short-circuit protection device of the present invention
21:第一電阻器 21: First resistor
22:第二電阻器 22: Second resistor
23:第三電阻器 23: Third resistor
24:光電耦合器 24: Photocoupler
25:第一半導體 25: First Semiconductor
26:第二半導體 26: Second Semiconductor
27:接地端 27: Ground terminal
30:第一接線端 30: The first terminal
40:第二接線端 40: The second terminal
50:第三接線端 50: The third terminal
圖1為習知電池放電保護裝置之實施例。 FIG. 1 is an embodiment of a conventional battery discharge protection device.
圖2本發明直流短路保護裝置第一實施例。 FIG. 2 is the first embodiment of the DC short-circuit protection device of the present invention.
圖3本發明直流短路保護裝置第二實施例。 FIG. 3 is a second embodiment of the DC short-circuit protection device of the present invention.
圖4本發明直流短路保護裝置第三實施例。 FIG. 4 is a third embodiment of the DC short-circuit protection device of the present invention.
圖5本發明直流短路保護裝置第四實施例。 FIG. 5 is a fourth embodiment of the DC short circuit protection device of the present invention.
圖6本發明直流短路保護裝置第五實施例。 FIG. 6 is a fifth embodiment of the DC short-circuit protection device of the present invention.
如圖2所示,為本發明直流短路保護裝置第一實施例,自圖中可知,直流電源10連接第一開關11,第一開關11連接負載12的第一端,負載12的第二端連接第二接線端40、第一半導體25的汲極D(Drain,D)與第三電阻器23的第一端,第三電阻器23的第二端連接光電耦合器24的第一端T1,光電耦合器24的第二端T2連接第二半導體26的基極B;直流電源10連接第二開關13的第一端,第二開關13的第二端連接第一接線端30及第一電阻器 21的第一端,第一電阻器21的第二端連接第一半導體25的閘極G(Gate,G)與第二半導體26的集極C(Collector,C);直流電源10連接第二開關13的第一端,第二開關13的第二端連接第一接線端30及第二電阻器22的第一端,第二電阻器22的第二端連接光電耦合器24的陽極端A(Anode,A);直流電源10、第一開關11及負載12三者成串聯連接電路; As shown in FIG. 2 , it is the first embodiment of the DC short-circuit protection device of the present invention. As can be seen from the figure, the DC power supply 10 is connected to the first switch 11 , the first switch 11 is connected to the first end of the load 12 , and the second end of the load 12 Connect the second terminal 40 , the drain D (Drain, D) of the first semiconductor 25 and the first end of the third resistor 23 , and the second end of the third resistor 23 is connected to the first end T1 of the optocoupler 24 , the second end T2 of the photocoupler 24 is connected to the base B of the second semiconductor 26; the DC power supply 10 is connected to the first end of the second switch 13, and the second end of the second switch 13 is connected to the first terminal 30 and the first terminal Resistor The first end of 21, the second end of the first resistor 21 is connected to the gate G (Gate, G) of the first semiconductor 25 and the collector C (Collector, C) of the second semiconductor 26; the DC power supply 10 is connected to the second The first terminal of the switch 13 and the second terminal of the second switch 13 are connected to the first terminal 30 and the first terminal of the second resistor 22 , and the second terminal of the second resistor 22 is connected to the anode terminal A of the photocoupler 24 (Anode, A); the DC power supply 10, the first switch 11 and the load 12 form a series connection circuit;
直流電源10、第二開關13及第一電阻器21三者成串聯連接電路;直流電源10、第二開關21及第二電阻器22三者成串聯連接電路;第一開關11的第一端與第二開關13的第一端連接在直流電源10的正電端,直流電源10的負電端連接第三接線端50及接地端27;直流電源10可以依供應電壓不同需求,分成二個直流供應電源,一為連接第一開關11連接的第一直流電源,另一為連接第二開關13的第二直流電源,而不自限;其第二直流電源可視為一電壓源,而不自限為第二直流電源,亦就是第二直流電源可以採用脈波電源替代,其動作原理與功能皆與用第二直流電源相同。
The
如圖2所示,本發明直流短路保護裝置20包括有第一半導體25、第二半導體26、第一電阻器21、第二電阻器22、第三電阻器23及光電耦合器24;第一半導體25的汲極D與第三電阻器23的第一端連接第二接線端40及負載12的第二端,第一半導體25的閘極G、第二半導體26的集極C及第一電阻器21的第二端連接在一起;光電耦合器24的陽極端A連接第二電阻器22的第二端,光電耦合器24的陰極端K(Cathode,K)、第一半導體25的源極S(Source,S)及第二半導體26的射極E(Emitter,E)連 接在一起成為接地端27,其接地端27連接直流電源10的負電端,光電耦合器24的第一端T1連接第三電阻器23的第二端,光電耦合器24的第二端T2連接第二半導體26的基極B(Base,B);第一半導體25為N通道金屬氧化半導體場效電晶體,第二半導體26為N型電晶體,光電耦合器24為電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能均與電晶體輸出型相同,依其需求選用而不予自限。 As shown in FIG. 2, the DC short-circuit protection device 20 of the present invention includes a first semiconductor 25, a second semiconductor 26, a first resistor 21, a second resistor 22, a third resistor 23 and an optocoupler 24; the first The drain D of the semiconductor 25 and the first end of the third resistor 23 are connected to the second terminal 40 and the second end of the load 12 , the gate G of the first semiconductor 25 , the collector C of the second semiconductor 26 and the first The second ends of the resistors 21 are connected together; the anode end A of the photocoupler 24 is connected to the second end of the second resistor 22 , the cathode end K (Cathode, K) of the photocoupler 24 , and the source of the first semiconductor 25 The pole S (Source, S) is connected to the emitter E (Emitter, E) of the second semiconductor 26 Connected together to form a ground terminal 27, the ground terminal 27 is connected to the negative terminal of the DC power supply 10, the first terminal T1 of the optocoupler 24 is connected to the second terminal of the third resistor 23, and the second terminal T2 of the optocoupler 24 is connected The base B (Base, B) of the second semiconductor 26; the first semiconductor 25 is an N-channel metal-oxide-semiconductor field effect transistor, the second semiconductor 26 is an N-type transistor, and the photocoupler 24 can also be a transistor output type The Darlington composite transistor output type or photorelay is used, because its action principle and function are the same as the transistor output type, and the selection is not limited according to its needs.
如圖2所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 2, the operating principle of the DC short-circuit protection device of the present invention is as follows:
如圖2所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,再經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的汲極D與源極S開路,同時因為光電耦合器24的陽極端A無電壓供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的汲極D與源極S開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S導通,此時直流電源10供電於負載12,同時經過第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一
半導體25的閘極G,因此第一半導體25的汲極D與源極S開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。
As shown in FIG. 2 , when the
如圖2所示,本發明直流短路保護裝置的負載12短路保護動作原理如下:
As shown in FIG. 2 , the short-circuit protection action principle of the
由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表(Output Characteristics)可知,當第一半導體25的汲極電流(Drain Current)上升到其相對應的汲源極電壓(Drain Source Voltage)到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓(On State Voltage)時,第一半導體25的汲源極電壓供電於第二半導體26的基極B,此時第二半導體26的集極C與射極E導通,於是第一半導體25的汲極D與源極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載(Over Load)汲極電流亦可達到過載保護的功能。
It can be seen from the above that when the
如圖3所示,為本發明直流短路保護裝置第二實施例,自圖中可知,其係將圖2的第一半導體25由N通道金屬氧化半導體場效電晶體改為N型半導體,光電耦合器24採用電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能皆與電晶體輸出型相同,其他電路結構皆與圖2相同而不贅述。
As shown in FIG. 3, it is the second embodiment of the DC short circuit protection device of the present invention. It can be seen from the figure that the
如圖3所示,本發明直流短路保護裝置的動作原理 如下: As shown in Figure 3, the operating principle of the DC short-circuit protection device of the present invention as follows:
如圖3所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,再經由第二接線端40到第一半導體25的集極C與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的基極B因無基極B電壓所以第一半導體25的集極C與射極E開路,同時因為光電耦合器24的陽極端A無電壓供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的集極C與射極E開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的基極B,因此第一半導體25的集極C與射極E導通,此時直流電源10供電於負載12,同時經過第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一半導體25的基極B,因此第一半導體25的集極C與射極E開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。
As shown in FIG. 3 , when the
如圖3所示,本發明直流短路保護裝置的負載12短路保護動作原理如下:
As shown in FIG. 3 , the short-circuit protection action principle of the
由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的集極電流上升到其相對應的
集射極電壓到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓時,第一半導體25的集射極電壓供電於第二半導體26的基極B,此時第二半導體26的集極C與射極E導通,於是第一半導體25的集極C與射極E開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載集極電流亦可達到過載保護的功能。
It can be seen from the above that when the
由上述可知,將圖2的第一半導體25由N通道金屬氧化半導體場效電晶體改為N型半導體其動作原理相同,而其負載12短路時之保護直流電源10的功能亦相同。
It can be seen from the above that changing the
如圖4所示,為本發明直流短路保護裝置第三實施例,自圖中可知,其係將圖2的第二半導體26由N型半導體改為N通道金屬氧化半導體場效電晶體,光電耦合器24為電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能皆與電晶體輸出型相同,其他電路結構皆與圖2相同而不贅述。
As shown in FIG. 4, it is the third embodiment of the DC short-circuit protection device of the present invention. As can be seen from the figure, the
如圖4所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 4, the operating principle of the DC short-circuit protection device of the present invention is as follows:
如圖4所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的汲極D與源極S開路,同時因為光電耦合器24的陽極端A無電壓
供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的汲極D與源極S開路,其光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S導通,此時直流電源10供電於負載12,同時經過第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。
As shown in FIG. 4 , when the
如圖4所示,本發明直流短路保護裝置的負載12短路保護動作原理如下:
As shown in FIG. 4 , the short-circuit protection action principle of the
由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的汲極電流上升到其相對應的汲源極電壓到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓時,第一半導體25的汲源極電壓供電於第二半導體26的閘極G,此時第二半導體26的汲極D與源極S導通,於是第一半導體25的汲極D與源極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;
It can be seen from the above that when the
同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所
需的過載汲極電流亦可達到過載保護的功能。
Similarly, the on-voltage between the first terminal T1 and the second terminal T2 of the
由上述可知,將圖2的第二半導體26由N型半導體改為N通道金屬氧化半導體場效電晶體,其動作原理相同,而其負載12短路時之保護直流電源10的功能亦相同。
It can be seen from the above that changing the
如圖5所示,為本發明直流短路保護裝置第四實施例,自圖中可知,其係將圖3的第一半導體25與第二半導體26由N型半導體改為絕緣閘極雙極電晶體,光電耦合器24為電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能皆與電晶體輸出型相同,其他電路結構皆與圖3相同而不贅述。
As shown in FIG. 5, it is the fourth embodiment of the DC short circuit protection device of the present invention. It can be seen from the figure that the
如圖5所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 5, the operating principle of the DC short-circuit protection device of the present invention is as follows:
如圖5所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的集極C與射極E開路,同時因為光電耦合器24的陽極端A無電壓供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的集極C與射極E開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的閘極G,因此第一半導體25的集極C與射極E導通,此時直流電源10供電於負載12,同時經過
第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一半導體25的閘極G,因此第一半導體25的集極C與射極E開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。
As shown in FIG. 5 , when the
如圖5所示,本發明直流短路保護裝置的負載12短路保護動作原理如下:
As shown in FIG. 5 , the short-circuit protection action principle of the
由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的集極電流上升到其相對應的集射極電壓到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓時,第一半導體25的集射極電壓供電於第二半導體26的閘極G,此時第二半導體26的集極C與射極E導通,於是第一半導體25的集極C與射極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;
It can be seen from the above that when the
同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載集極電流亦可達到過載保護的功能。
Similarly, the on-voltage between the first terminal T1 and the second terminal T2 of the
由上述可知,將圖3的第一半導體25與第二半導體26由N型半導體改為絕緣閘極雙極電晶體,而其負載12短路時之保護直流電源10的功能亦相同。
As can be seen from the above, the
如圖6所示,為本發明直流短路保護裝置第五實施例,自圖中可知,其係將圖2的光電耦合器24的第一端T1與第二端T2連接到第一半導體25的閘
極G與第二半導體26的集極C之間,其他電路結構皆與圖2相同而不贅述。
As shown in FIG. 6 , it is the fifth embodiment of the DC short-circuit protection device of the present invention. As can be seen from the figure, the first terminal T1 and the second terminal T2 of the
如圖6所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 6, the operating principle of the DC short-circuit protection device of the present invention is as follows:
如圖6所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,再經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的汲極D與源極S開路,同時因為光電耦合器24的陽極端A無電壓所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的汲極D與源極S開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應,但是直流電源10經過負載12到第三電阻器23的第一端到第二端再到第二半導體26的基極B,此時第二半導體26的集極C與射極E導通,其第三電阻器23的功能為限制直流電源10的電流大小,可以保護第二半導體26;
As shown in FIG. 6 , when the
當第二開關13導通時,直流電源10供電於第一電阻器21,到第一半導體25的閘極G,因此第一半導體25的汲極D與源極S導通,此時直流電源10供電於負載12,接著直流電源10供電於第二電阻器22,到光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於直流電源10不供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S開路,此時直流電源10不供電於負載12,同時直流電源10不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端
T2之間開路。
When the
由上述的動作原理可知,將圖6的第一半導體25由N通道金屬氧化半導體場效電晶體改為N型電晶體如同圖3的動作原理,兩者等功能,因此圖6的第一半導體25由N通道金屬氧化半導體場效電晶體可以改為N型電晶體。
It can be seen from the above operating principle that the
由上述的動作原理可知,將圖6的第二半導體26由N型電晶體改為N通道金屬氧化半導體場效電晶體如同圖4的動作原理,兩者等功能,因此圖6的第二半導體26由N型電晶體可以改為N通道金屬氧化半導體場效電晶體。
It can be seen from the above-mentioned operation principle that changing the
由上述的動作原理可知,將圖6的第一半導體25由N通道金屬氧化半導體場效電晶體改為絶緣閘極雙極電晶體如同圖5的動作原理,兩者等功能,因此圖6的第一半導體25由N通道金屬氧化半導體場效電晶體可以改為絶緣閘極雙極電晶體。
It can be seen from the above-mentioned operation principle that the
如圖6所示,本發明直流短路保護裝置的負載12短路保護動作原理如下:
As shown in FIG. 6 , the short-circuit protection action principle of the
由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的汲極電流上升到其相對應的汲源極電壓到達高於第二半導體26的基射極導通電壓,此時第一半導體25的汲源極電壓供電於第二半導體26的基極B,因此第二半導體26的集極C與射極E導通,因為光電耦合器24的第一端T1與第二端T2之間亦是導通,於是第一半導體25的汲極D與源極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;同理,適
當的選擇第三電阻器23的電阻值與光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載汲極電流亦可達到過載保護的功能。
It can be seen from the above that when the
由上述動作原理可知,將圖2的光電耦合器24的連接位置改變,而其負載12短路時之保護直流電源10的功能亦相同。
It can be seen from the above operating principle that the function of protecting the
由上述動作原理可知,其圖2、圖3、圖4與圖5所示的第一半導體25與第二半導體26可以替代變換,其圖6亦可應用圖3、圖4與圖5所示的第一半導體25與第二半導體26亦然可以替代變換,因其動作原理相同而不贅述。
It can be seen from the above operating principle that the
由上述動作原理與功能動作的說明可知本發明可據於實施。 From the description of the above-mentioned operation principle and functional operation, it can be seen that the present invention can be implemented accordingly.
10:直流電源 10: DC power supply
11:第一開關 11: The first switch
12:負載 12: Load
13:第二開關 13: Second switch
20:本發明直流短路保護裝置 20: DC short-circuit protection device of the present invention
21:第一電阻器 21: First resistor
22:第二電阻器 22: Second resistor
23:第三電阻器 23: Third resistor
24:光電耦合器 24: Photocoupler
25:第一半導體 25: First Semiconductor
26:第二半導體 26: Second Semiconductor
27:接地端 27: Ground terminal
30:第一接線端 30: The first terminal
40:第二接線端 40: The second terminal
50:第三接線端 50: The third terminal
Claims (10)
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TW109132207A TW202213891A (en) | 2020-09-18 | 2020-09-18 | Dc short circuits protection device |
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