TW202213891A - Dc short circuits protection device - Google Patents

Dc short circuits protection device Download PDF

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TW202213891A
TW202213891A TW109132207A TW109132207A TW202213891A TW 202213891 A TW202213891 A TW 202213891A TW 109132207 A TW109132207 A TW 109132207A TW 109132207 A TW109132207 A TW 109132207A TW 202213891 A TW202213891 A TW 202213891A
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semiconductor
terminal
resistor
short
drain
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TW109132207A
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盧昭正
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盧昭正
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Abstract

The DC short circuits protection device of the invention comprises a first semiconductor, a second semiconductor, a first resistor, a second resistor, a third resistor and a photocoupler, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.

Description

直流短路保護裝置 DC short circuit protection device

本發明直流短路保護裝置,具有在直流電路應用過程中負載兩端發生過載或短路之保護功能及其包括有第一半導體、第二半導體、第一電阻器、第二電阻器、第三電阻器及光電耦合器之電子技術領域。 The DC short-circuit protection device of the present invention has the protection function of overload or short-circuit at both ends of the load during the application of the DC circuit, and includes a first semiconductor, a second semiconductor, a first resistor, a second resistor, and a third resistor. And the field of electronic technology of optocoupler.

請參閱台灣專利證書號發明第I 583089號「電池放電保護裝置」,如圖1所示,當充電裝置100對電池11執行充電動作時,充電裝置100的正電端G+供給正電壓於第一集極電阻15到第一半導體12的閘極端G,此時第一半導體12的源極S及汲極D導通,其充電電流經過電池11的正電端,電池11的負電端,第一半導體12的源極S,第一半導體12的漏極D,而回到充電裝置100的負電端G-,而達成電池11的充電動作。 Please refer to Taiwan Patent Certificate No. Invention No. I 583089 “Battery Discharge Protection Device”. As shown in FIG. 1 , when the charging device 100 performs the charging operation on the battery 11 , the positive terminal G+ of the charging device 100 supplies a positive voltage to the first The collector resistor 15 is connected to the gate terminal G of the first semiconductor 12. At this time, the source S and drain D of the first semiconductor 12 are turned on, and the charging current passes through the positive terminal of the battery 11, the negative terminal of the battery 11, and the first semiconductor. The source S of the 12 and the drain D of the first semiconductor 12 return to the negative terminal G- of the charging device 100 to achieve the charging operation of the battery 11 .

如圖1所示,當充電動作完成時,將充電裝置100改為負載200,電池11對負載200執行放電動作,此時電池11的正電端供給正電壓於第一集極電阻15到第一半導體12的閘極G,因此第一半導體12的源極S及汲極D導通,其放電電流經過負載200 的正電端,負載200的負電端,第一半導體12的汲極D,第一半導體12的源極S,而回到電池11的負電端,而達成電池11的放電動作。 As shown in FIG. 1 , when the charging operation is completed, the charging device 100 is changed to a load 200, and the battery 11 performs a discharging operation on the load 200. At this time, the positive terminal of the battery 11 supplies a positive voltage to the first collector resistor 15 to the second The gate G of a semiconductor 12, so the source S and drain D of the first semiconductor 12 are turned on, and the discharge current flows through the load 200 The positive terminal of the load 200 is the negative terminal of the load 200 , the drain D of the first semiconductor 12 , the source S of the first semiconductor 12 , and return to the negative terminal of the battery 11 to achieve the discharge operation of the battery 11 .

如圖1所示,當電池11對負載200執行放電動作中發生負載200短路時,第二半導體14的基極B的電位為電路正電位,因此第二半導體14的基極B的電位高於射極E而使第二半導體14導通,此時第一半導體12的閘極G與源極S的電位相等,因此第一半導體12開路,此時第一半導體12的汲極電流中止,以保護電池11因發生負載200短路而造成電池11的損壞,若欲解除第二半導體14的導通狀態只需將短路原因去除,即可解除第二半導體14的導通狀態,而恢復第一半導體12的正常狀態,其缺點如下: As shown in FIG. 1 , when the load 200 is short-circuited during the discharge operation of the battery 11 to the load 200, the potential of the base B of the second semiconductor 14 is the circuit positive potential, so the potential of the base B of the second semiconductor 14 is higher than The emitter E turns on the second semiconductor 14. At this time, the potentials of the gate G and the source S of the first semiconductor 12 are equal, so the first semiconductor 12 is opened, and the drain current of the first semiconductor 12 is stopped at this time to protect the The battery 11 is damaged due to the short circuit of the load 200. If you want to release the conduction state of the second semiconductor 14, you only need to remove the cause of the short circuit, the conduction state of the second semiconductor 14 can be released, and the normal state of the first semiconductor 12 can be restored. status, its disadvantages are as follows:

1.將負載200兩端造成短路的原因解除後,要設一個開關將負載200開路(Off),再將所設的開關導通(On)電池11才能再供電於負載200,因此造成增加裝置成本及應用上之不便。 1. After removing the cause of the short circuit at both ends of the load 200, a switch should be set to open the load 200 (Off), and then the switch should be turned on (On) before the battery 11 can supply power to the load 200 again, thus increasing the cost of the device and application inconvenience.

2.若要恢復正常的電路功能,將負載200兩端造成短路的原因解除後,再重新將電池11送電,也要增加一個開關,造成增加裝置成本及應用上之不便。 2. To restore the normal circuit function, after removing the cause of the short circuit between the two ends of the load 200, and then re-powering the battery 11, a switch must be added, which increases the cost of the device and causes inconvenience in application.

本發明的目的: Purpose of the present invention:

本發明應用第一半導體、第二半導體、第一電阻器、第二電阻器、第三電阻器及光電耦合器,達到能在直流電路供電中發生負載過載或短路時直流電源得到保護。 The present invention applies the first semiconductor, the second semiconductor, the first resistor, the second resistor, the third resistor and the optocoupler, so that the DC power supply can be protected when the load is overloaded or short-circuited in the DC circuit power supply.

當負載發生短路時,本發明應用第二半導體能在極 短之時間內執行第一半導體開路動作,達到保護直流電源電路之功能及避免因負載短路而引起之各種災害。 When the load is short-circuited, the present invention uses the second semiconductor to The first semiconductor open-circuit action is performed in a short time to achieve the function of protecting the DC power supply circuit and avoid various disasters caused by short-circuit of the load.

本發明光電耦合器執行本發明在開機時,使第二半導體執行延時動作,達到短路原因排除時不必重新再送直流電源及不必負載兩端的短路原因去除後,需要一個開關執行開路與導通的動作。 When the photocoupler of the present invention implements the present invention, the second semiconductor performs a delay action when the power is turned on. When the cause of the short circuit is eliminated, it is not necessary to re-supply the DC power supply and it is not necessary to remove the cause of the short circuit at both ends of the load, and a switch is required to perform the action of opening and conducting.

本發明有下列之特徵: The present invention has the following features:

1.本發明之第一半導體其負責直流電源之開路與導通供電於負載。 1. The first semiconductor of the present invention is responsible for the open circuit and conduction of the DC power supply to supply power to the load.

2.本發明之第二半導體,其負責控制第一半導體之開路與導通動作,以達到負載兩端發生短路時保護直流電源電路的目的。 2. The second semiconductor of the present invention is responsible for controlling the open-circuit and conduction actions of the first semiconductor, so as to achieve the purpose of protecting the DC power supply circuit when a short circuit occurs at both ends of the load.

3.本發明設有第一電阻器具有限制電流的功能,以防止第一半導體因為閘極或基極過大電流而損壞第一半導體。 3. In the present invention, the first resistor has the function of limiting current to prevent the first semiconductor from being damaged due to excessive gate or base current.

4.本發明設有第二電阻器具有限制電流的功能,以防止光電耦合器的發光二極體發生過大電流而損壞光電耦合器。 4. The present invention is provided with a second resistor which has the function of limiting current, so as to prevent the photocoupler from being damaged by excessive current generated in the light emitting diode of the photocoupler.

5.本發明設有第三電阻器具有限制電流的功能,以防止第二半導體因為閘極或基極過大電流而損壞第二半導體。 5. In the present invention, the third resistor has the function of limiting the current, so as to prevent the second semiconductor from being damaged due to excessive gate or base current.

6.本發明之光電耦合器,負責控制第二半導體之開路與導通動作時間,以達到啟動第一半導體導通之動作目的。 6. The optocoupler of the present invention is responsible for controlling the open-circuit and conduction time of the second semiconductor, so as to achieve the purpose of initiating the conduction of the first semiconductor.

7.本發明之第一半導體包括N通道金屬氧化半導體場效電晶體(N Channel Metal Oxide Semiconductor Field Effect Transistor,N Channel MOSFET)、N型電晶體(N Type Transistor)或絕緣閘極雙極電晶體 (Insulated Gate Bipolar Transistor,IGBT)三者可以根據需求自行選用。 7. The first semiconductor of the present invention includes an N Channel Metal Oxide Semiconductor Field Effect Transistor (N Channel MOSFET), an N Type Transistor or an Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) can be selected according to the needs.

8.本發明之第二半導體包括N通道金屬氧化半導體場效電晶體、N型電晶體或絕緣閘極雙極電晶體三者可以根據需求自行選用。 8. The second semiconductor of the present invention includes an N-channel metal oxide semiconductor field effect transistor, an N-type transistor or an insulated gate bipolar transistor, which can be selected according to requirements.

9.本發明之光電耦合器包括電晶體輸出型(Transistor Output)、達靈頓複合電晶體輸出型(Darlington Phototransistor Output)或光電繼電器(Potorelays),三者可以根據需求自行選用。 9. The optocoupler of the present invention includes Transistor Output, Darlington Phototransistor Output or Potorelays, which can be selected according to requirements.

10:直流電源 10: DC power supply

11:第一開關 11: The first switch

12:負載 12: Load

13:第二開關 13: Second switch

20:本發明直流短路保護裝置 20: DC short-circuit protection device of the present invention

21:第一電阻器 21: First resistor

22:第二電阻器 22: Second resistor

23:第三電阻器 23: Third resistor

24:光電耦合器 24: Photocoupler

25:第一半導體 25: First Semiconductor

26:第二半導體 26: Second Semiconductor

27:接地端 27: Ground terminal

30:第一接線端 30: The first terminal

40:第二接線端 40: The second terminal

50:第三接線端 50: The third terminal

圖1為習知電池放電保護裝置之實施例。 FIG. 1 is an embodiment of a conventional battery discharge protection device.

圖2本發明直流短路保護裝置第一實施例。 FIG. 2 is the first embodiment of the DC short-circuit protection device of the present invention.

圖3本發明直流短路保護裝置第二實施例。 FIG. 3 is a second embodiment of the DC short-circuit protection device of the present invention.

圖4本發明直流短路保護裝置第三實施例。 FIG. 4 is a third embodiment of the DC short-circuit protection device of the present invention.

圖5本發明直流短路保護裝置第四實施例。 FIG. 5 is a fourth embodiment of the DC short circuit protection device of the present invention.

圖6本發明直流短路保護裝置第五實施例。 FIG. 6 is a fifth embodiment of the DC short-circuit protection device of the present invention.

如圖2所示,為本發明直流短路保護裝置第一實施例,自圖中可知,直流電源10連接第一開關11,第一開關11連接負載12的第一端,負載12的第二端連接第二接線端40、第一半導體25的汲極D(Drain,D)與第三電阻器23的第一端,第三電阻器23的第二端連接光電耦合器24的第一端T1,光電耦合器24的第二端T2連接第二半導體26的基極B;直流電源10連接第二開關13的第一端,第二開關13的第二端連接第一接線端30及第一電阻器 21的第一端,第一電阻器21的第二端連接第一半導體25的閘極G(Gate,G)與第二半導體26的集極C(Collector,C);直流電源10連接第二開關13的第一端,第二開關13的第二端連接第一接線端30及第二電阻器22的第一端,第二電阻器22的第二端連接光電耦合器24的陽極端A(Anode,A);直流電源10、第一開關11及負載12三者成串聯連接電路; As shown in FIG. 2 , it is the first embodiment of the DC short-circuit protection device of the present invention. As can be seen from the figure, the DC power supply 10 is connected to the first switch 11 , the first switch 11 is connected to the first end of the load 12 , and the second end of the load 12 Connect the second terminal 40 , the drain D (Drain, D) of the first semiconductor 25 and the first end of the third resistor 23 , and the second end of the third resistor 23 is connected to the first end T1 of the optocoupler 24 , the second end T2 of the photocoupler 24 is connected to the base B of the second semiconductor 26; the DC power supply 10 is connected to the first end of the second switch 13, and the second end of the second switch 13 is connected to the first terminal 30 and the first terminal Resistor The first end of 21, the second end of the first resistor 21 is connected to the gate G (Gate, G) of the first semiconductor 25 and the collector C (Collector, C) of the second semiconductor 26; the DC power supply 10 is connected to the second The first terminal of the switch 13 and the second terminal of the second switch 13 are connected to the first terminal 30 and the first terminal of the second resistor 22 , and the second terminal of the second resistor 22 is connected to the anode terminal A of the photocoupler 24 (Anode, A); the DC power supply 10, the first switch 11 and the load 12 form a series connection circuit;

直流電源10、第二開關13及第一電阻器21三者成串聯連接電路;直流電源10、第二開關21及第二電阻器22三者成串聯連接電路;第一開關11的第一端與第二開關13的第一端連接在直流電源10的正電端,直流電源10的負電端連接第三接線端50及接地端27;直流電源10可以依供應電壓不同需求,分成二個直流供應電源,一為連接第一開關11連接的第一直流電源,另一為連接第二開關13的第二直流電源,而不自限;其第二直流電源可視為一電壓源,而不自限為第二直流電源,亦就是第二直流電源可以採用脈波電源替代,其動作原理與功能皆與用第二直流電源相同。 The DC power source 10 , the second switch 13 and the first resistor 21 form a series connection circuit; the DC power source 10 , the second switch 21 and the second resistor 22 form a series connection circuit; the first end of the first switch 11 The first terminal of the second switch 13 is connected to the positive terminal of the DC power supply 10, and the negative terminal of the DC power supply 10 is connected to the third terminal 50 and the ground terminal 27; The power supply, one is the first DC power supply connected to the first switch 11, and the other is the second DC power supply connected to the second switch 13, which is not self-limited; the second DC power supply can be regarded as a voltage source, not The self-limiting is the second DC power source, that is, the second DC power source can be replaced by a pulse power source, and its operating principle and function are the same as using the second DC power source.

如圖2所示,本發明直流短路保護裝置20包括有第一半導體25、第二半導體26、第一電阻器21、第二電阻器22、第三電阻器23及光電耦合器24;第一半導體25的汲極D與第三電阻器23的第一端連接第二接線端40及負載12的第二端,第一半導體25的閘極G、第二半導體26的集極C及第一電阻器21的第二端連接在一起;光電耦合器24的陽極端A連接第二電阻器22的第二端,光電耦合器24的陰極端K(Cathode,K)、第一半導體25的源極S(Source,S)及第二半導體26的射極E(Emitter,E)連 接在一起成為接地端27,其接地端27連接直流電源10的負電端,光電耦合器24的第一端T1連接第三電阻器23的第二端,光電耦合器24的第二端T2連接第二半導體26的基極B(Base,B);第一半導體25為N通道金屬氧化半導體場效電晶體,第二半導體26為N型電晶體,光電耦合器24為電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能均與電晶體輸出型相同,依其需求選用而不予自限。 As shown in FIG. 2, the DC short-circuit protection device 20 of the present invention includes a first semiconductor 25, a second semiconductor 26, a first resistor 21, a second resistor 22, a third resistor 23 and an optocoupler 24; the first The drain D of the semiconductor 25 and the first end of the third resistor 23 are connected to the second terminal 40 and the second end of the load 12 , the gate G of the first semiconductor 25 , the collector C of the second semiconductor 26 and the first The second ends of the resistors 21 are connected together; the anode end A of the photocoupler 24 is connected to the second end of the second resistor 22 , the cathode end K (Cathode, K) of the photocoupler 24 , and the source of the first semiconductor 25 The pole S (Source, S) is connected to the emitter E (Emitter, E) of the second semiconductor 26 Connected together to form a ground terminal 27, the ground terminal 27 is connected to the negative terminal of the DC power supply 10, the first terminal T1 of the optocoupler 24 is connected to the second terminal of the third resistor 23, and the second terminal T2 of the optocoupler 24 is connected The base B (Base, B) of the second semiconductor 26; the first semiconductor 25 is an N-channel metal-oxide-semiconductor field effect transistor, the second semiconductor 26 is an N-type transistor, and the photocoupler 24 can also be a transistor output type The Darlington composite transistor output type or photorelay is used, because its action principle and function are the same as the transistor output type, and the selection is not limited according to its needs.

如圖2所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 2, the operating principle of the DC short-circuit protection device of the present invention is as follows:

如圖2所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,再經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的汲極D與源極S開路,同時因為光電耦合器24的陽極端A無電壓供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的汲極D與源極S開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S導通,此時直流電源10供電於負載12,同時經過第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一 半導體25的閘極G,因此第一半導體25的汲極D與源極S開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。 As shown in FIG. 2 , when the first switch 11 is turned on, the current of the DC power supply 10 passes through the first switch 11 and the load 12 , and then passes through the second terminal 40 to the drain D of the first semiconductor 25 and the third resistor 23 The first end of the third resistor 23 and the second end of the third resistor 23 go to the first end T1 of the photocoupler 24. At this time, the gate G of the first semiconductor 25 has no gate G voltage, so the drain of the first semiconductor 25 D and the source S are open-circuited. At the same time, since the anode terminal A of the photocoupler 24 has no voltage supply, the first terminal T1 and the second terminal T2 of the photocoupler 24 are open-circuited. Since the drain D and the source of the first semiconductor 25 S is open, and the first terminal T1 and the second terminal T2 of the photocoupler 24 are open, so the load 12 is not supplied with the DC power supply 10; when the second switch 13 is turned on, the current from the DC power supply 10 passes through the first terminal. 30, and then the first resistor 21 supplies power to the gate G of the first semiconductor 25, so the drain D of the first semiconductor 25 is connected to the source S. At this time, the DC power supply 10 supplies power to the load 12 and passes through the second resistor. The switch 22 supplies power to the anode terminal A of the optocoupler 24, so the first terminal T1 and the second terminal T2 of the optocoupler 24 are conductive; when the second switch 13 is open, the The gate G of the semiconductor 25, so the drain D and the source S of the first semiconductor 25 are open-circuited. At this time, the DC power supply 10 does not supply power to the load 12, and does not supply power to the anode terminal A of the photocoupler 24. Therefore, the photocoupler 24 has an open circuit between the first terminal T1 and the second terminal T2.

如圖2所示,本發明直流短路保護裝置的負載12短路保護動作原理如下: As shown in FIG. 2 , the short-circuit protection action principle of the load 12 of the DC short-circuit protection device of the present invention is as follows:

由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表(Output Characteristics)可知,當第一半導體25的汲極電流(Drain Current)上升到其相對應的汲源極電壓(Drain Source Voltage)到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓(On State Voltage)時,第一半導體25的汲源極電壓供電於第二半導體26的基極B,此時第二半導體26的集極C與射極E導通,於是第一半導體25的汲極D與源極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載(Over Load)汲極電流亦可達到過載保護的功能。 It can be seen from the above that when the first switch 11 and the second switch 13 are turned on, the load 12 is powered by the DC power supply 10; when both ends of the load 12 are short-circuited, according to the output characteristics of the first semiconductor 25, when The drain current (Drain Current) of the first semiconductor 25 rises to its corresponding drain source voltage (Drain Source Voltage) reaching higher than the turn-on voltage ( On State Voltage), the drain-source voltage of the first semiconductor 25 supplies power to the base B of the second semiconductor 26. At this time, the collector C and the emitter E of the second semiconductor 26 are turned on, so the drain of the first semiconductor 25 D and the source S are open-circuited, the DC power supply 10 does not supply power to the short-circuit load 12, and the DC power supply 10 is protected; similarly, the conduction voltage between the first terminal T1 and the second terminal T2 of the optocoupler 24 is appropriately selected , the overload protection function can also be achieved in accordance with the overload (Over Load) sink current required by the first semiconductor 25 .

如圖3所示,為本發明直流短路保護裝置第二實施例,自圖中可知,其係將圖2的第一半導體25由N通道金屬氧化半導體場效電晶體改為N型半導體,光電耦合器24採用電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能皆與電晶體輸出型相同,其他電路結構皆與圖2相同而不贅述。 As shown in FIG. 3, it is the second embodiment of the DC short circuit protection device of the present invention. It can be seen from the figure that the first semiconductor 25 in FIG. 2 is changed from an N-channel metal oxide semiconductor field effect transistor to an N-type semiconductor. The coupler 24 adopts the transistor output type, and can also use the Darlington compound transistor output type or the photorelay, because its operation principle and function are the same as those of the transistor output type, and other circuit structures are the same as those of FIG. 2 and will not be repeated.

如圖3所示,本發明直流短路保護裝置的動作原理 如下: As shown in Figure 3, the operating principle of the DC short-circuit protection device of the present invention as follows:

如圖3所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,再經由第二接線端40到第一半導體25的集極C與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的基極B因無基極B電壓所以第一半導體25的集極C與射極E開路,同時因為光電耦合器24的陽極端A無電壓供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的集極C與射極E開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的基極B,因此第一半導體25的集極C與射極E導通,此時直流電源10供電於負載12,同時經過第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一半導體25的基極B,因此第一半導體25的集極C與射極E開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。 As shown in FIG. 3 , when the first switch 11 is turned on, the current of the DC power source 10 passes through the first switch 11 and the load 12 , and then passes through the second terminal 40 to the collector C of the first semiconductor 25 and the third resistor 23 The first end of the third resistor 23 and the second end of the third resistor 23 go to the first end T1 of the photocoupler 24. At this time, the base B of the first semiconductor 25 has no base B voltage, so the collector of the first semiconductor 25 C and the emitter E are open-circuited. At the same time, because the anode terminal A of the photocoupler 24 has no voltage supply, the first terminal T1 and the second terminal T2 of the photocoupler 24 are open-circuited. Since the collector C and the emitter of the first semiconductor 25 E is open, and the first terminal T1 and the second terminal T2 of the photocoupler 24 are open, so the load 12 is not supplied by the DC power supply 10; when the second switch 13 is turned on, the current from the DC power supply 10 passes through the first terminal. 30, and then the first resistor 21 supplies power to the base B of the first semiconductor 25, so the collector C of the first semiconductor 25 is connected to the emitter E. At this time, the DC power supply 10 supplies power to the load 12 and passes through the second resistor. The switch 22 supplies power to the anode terminal A of the optocoupler 24, so the first terminal T1 and the second terminal T2 of the optocoupler 24 are conductive; when the second switch 13 is open, the base of the first semiconductor 25 is not powered. Therefore, the collector C and the emitter E of the first semiconductor 25 are open-circuited. At this time, the DC power supply 10 does not supply power to the load 12, and does not supply power to the anode terminal A of the photocoupler 24. Therefore, the first There is an open circuit between the terminal T1 and the second terminal T2.

如圖3所示,本發明直流短路保護裝置的負載12短路保護動作原理如下: As shown in FIG. 3 , the short-circuit protection action principle of the load 12 of the DC short-circuit protection device of the present invention is as follows:

由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的集極電流上升到其相對應的 集射極電壓到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓時,第一半導體25的集射極電壓供電於第二半導體26的基極B,此時第二半導體26的集極C與射極E導通,於是第一半導體25的集極C與射極E開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載集極電流亦可達到過載保護的功能。 It can be seen from the above that when the first switch 11 and the second switch 13 are turned on, the load 12 is powered by the DC power supply 10; when both ends of the load 12 are short-circuited, according to the output characteristic curve table of the first semiconductor 25, when the first semiconductor 25 the collector current rises to its corresponding When the collector-emitter voltage reaches higher than the turn-on voltage between the first terminal T1 and the second terminal T2 of the optocoupler 24, the collector-emitter voltage of the first semiconductor 25 supplies power to the base B of the second semiconductor 26, at this time The collector C and the emitter E of the second semiconductor 26 are conductive, so the collector C and the emitter E of the first semiconductor 25 are open-circuited, the DC power supply 10 does not supply power to the short-circuit load 12, and the DC power supply 10 is protected; similarly, The on-voltage between the first terminal T1 and the second terminal T2 of the optocoupler 24 is appropriately selected, and the overload protection function can also be achieved in accordance with the overload collector current required by the first semiconductor 25 .

由上述可知,將圖2的第一半導體25由N通道金屬氧化半導體場效電晶體改為N型半導體其動作原理相同,而其負載12短路時之保護直流電源10的功能亦相同。 It can be seen from the above that changing the first semiconductor 25 of FIG. 2 from an N-channel metal oxide semiconductor field effect transistor to an N-type semiconductor has the same operating principle and the same function of protecting the DC power supply 10 when the load 12 is short-circuited.

如圖4所示,為本發明直流短路保護裝置第三實施例,自圖中可知,其係將圖2的第二半導體26由N型半導體改為N通道金屬氧化半導體場效電晶體,光電耦合器24為電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能皆與電晶體輸出型相同,其他電路結構皆與圖2相同而不贅述。 As shown in FIG. 4, it is the third embodiment of the DC short-circuit protection device of the present invention. As can be seen from the figure, the second semiconductor 26 in FIG. 2 is changed from an N-type semiconductor to an N-channel metal oxide semiconductor field effect transistor. The coupler 24 is a transistor output type, and can also be a Darlington composite transistor output type or a photorelay, because its operating principle and function are the same as those of the transistor output type, and other circuit structures are the same as in FIG. 2 and will not be repeated.

如圖4所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 4, the operating principle of the DC short-circuit protection device of the present invention is as follows:

如圖4所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的汲極D與源極S開路,同時因為光電耦合器24的陽極端A無電壓 供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的汲極D與源極S開路,其光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S導通,此時直流電源10供電於負載12,同時經過第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。 As shown in FIG. 4 , when the first switch 11 is turned on, the current of the DC power supply 10 passes through the first switch 11 and the load 12 , and reaches the drain D of the first semiconductor 25 and the third resistor 23 through the second terminal 40 . The first terminal, the second terminal of the third resistor 23 and the first terminal T1 of the photocoupler 24, at this time, the gate G of the first semiconductor 25 has no gate G voltage, so the drain D of the first semiconductor 25 Open circuit with the source S, at the same time because the anode terminal A of the photocoupler 24 has no voltage supply, so the first end T1 and the second end T2 of the photocoupler 24 are open circuited. Since the drain electrode D and the source electrode S of the first semiconductor 25 are open circuited, the first end T1 and the second end T2 of the photocoupler 24 are open. Therefore, the load 12 is not supplied by the DC power supply 10; when the second switch 13 is turned on, the current from the DC power supply 10 passes through the first terminal 30, and then goes to the first resistor 21 to supply power to the gate G of the first semiconductor 25 , so the drain electrode D of the first semiconductor 25 is connected to the source electrode S. At this time, the DC power supply 10 supplies power to the load 12, and at the same time supplies power to the anode terminal A of the photocoupler 24 through the second resistor 22. Therefore, the photocoupler 24 is The first terminal T1 and the second terminal T2 are turned on; when the second switch 13 is open, since the gate G of the first semiconductor 25 is not supplied with power, the drain D and the source S of the first semiconductor 25 are open. When the DC power supply 10 does not supply power to the load 12 and does not supply power to the anode terminal A of the photocoupler 24, the first terminal T1 and the second terminal T2 of the photocoupler 24 are open-circuited.

如圖4所示,本發明直流短路保護裝置的負載12短路保護動作原理如下: As shown in FIG. 4 , the short-circuit protection action principle of the load 12 of the DC short-circuit protection device of the present invention is as follows:

由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的汲極電流上升到其相對應的汲源極電壓到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓時,第一半導體25的汲源極電壓供電於第二半導體26的閘極G,此時第二半導體26的汲極D與源極S導通,於是第一半導體25的汲極D與源極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護; It can be seen from the above that when the first switch 11 and the second switch 13 are turned on, the load 12 is powered by the DC power supply 10; when both ends of the load 12 are short-circuited, according to the output characteristic curve table of the first semiconductor 25, when the first semiconductor 25 When the drain current of the first semiconductor 25 rises to its corresponding drain-source voltage and is higher than the turn-on voltage between the first terminal T1 and the second terminal T2 of the photocoupler 24, the drain-source voltage of the first semiconductor 25 supplies power to the first terminal T1 and the second terminal T2. The gate electrode G of the second semiconductor 26, the drain electrode D and the source electrode S of the second semiconductor 26 are conductive at this time, so the drain electrode D and the source electrode S of the first semiconductor 25 are open-circuited, the DC power supply 10 does not supply power to the short-circuit load 12, and so that the DC power supply 10 is protected;

同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所 需的過載汲極電流亦可達到過載保護的功能。 Similarly, the on-voltage between the first terminal T1 and the second terminal T2 of the optocoupler 24 is appropriately selected to match the voltage of the first semiconductor 25 . The required overload sink current can also achieve the function of overload protection.

由上述可知,將圖2的第二半導體26由N型半導體改為N通道金屬氧化半導體場效電晶體,其動作原理相同,而其負載12短路時之保護直流電源10的功能亦相同。 It can be seen from the above that changing the second semiconductor 26 of FIG. 2 from an N-type semiconductor to an N-channel metal oxide semiconductor field effect transistor has the same operating principle and the same function of protecting the DC power supply 10 when the load 12 is short-circuited.

如圖5所示,為本發明直流短路保護裝置第四實施例,自圖中可知,其係將圖3的第一半導體25與第二半導體26由N型半導體改為絕緣閘極雙極電晶體,光電耦合器24為電晶體輸出型亦可以採用達靈頓複合電晶體輸出型或光電繼電器,因其動作原理與功能皆與電晶體輸出型相同,其他電路結構皆與圖3相同而不贅述。 As shown in FIG. 5, it is the fourth embodiment of the DC short circuit protection device of the present invention. It can be seen from the figure that the first semiconductor 25 and the second semiconductor 26 in FIG. 3 are changed from N-type semiconductors to insulated gate bipolar electrodes. Crystal, the photocoupler 24 is of the transistor output type, and can also be of the Darlington composite transistor output type or photorelay, because its operation principle and function are the same as those of the transistor output type, and other circuit structures are the same as Figure 3. Repeat.

如圖5所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 5, the operating principle of the DC short-circuit protection device of the present invention is as follows:

如圖5所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,第三電阻器23的第二端再到光電耦合器24的第一端T1,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的集極C與射極E開路,同時因為光電耦合器24的陽極端A無電壓供應,所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的集極C與射極E開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應;當第二開關13導通時,由直流電源10的電流經過第一接線端30,再到第一電阻器21供電於第一半導體25的閘極G,因此第一半導體25的集極C與射極E導通,此時直流電源10供電於負載12,同時經過 第二電阻器22供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於不供電於第一半導體25的閘極G,因此第一半導體25的集極C與射極E開路,此時直流電源10不供電於負載12,同時不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間開路。 As shown in FIG. 5 , when the first switch 11 is turned on, the current of the DC power supply 10 passes through the first switch 11 and the load 12 , and reaches the drain D of the first semiconductor 25 and the third resistor 23 through the second terminal 40 . The first end, the second end of the third resistor 23 goes to the first end T1 of the photocoupler 24, at this time the gate G of the first semiconductor 25 has no gate G voltage, so the collector C of the first semiconductor 25 Open circuit with the emitter E, and because the anode terminal A of the photocoupler 24 has no voltage supply, the first terminal T1 and the second terminal T2 of the photocoupler 24 are open circuited, because the collector C and the emitter E of the first semiconductor 25 Open circuit, and open circuit between the first terminal T1 and the second terminal T2 of the photocoupler 24, so the load 12 is not supplied by the DC power supply 10; when the second switch 13 is turned on, the current from the DC power supply 10 passes through the first terminal 30 , and then the first resistor 21 supplies power to the gate G of the first semiconductor 25, so the collector C of the first semiconductor 25 is connected to the emitter E. At this time, the DC power supply 10 supplies power to the load 12, and passes through The second resistor 22 supplies power to the anode terminal A of the optocoupler 24, so the first terminal T1 and the second terminal T2 of the optocoupler 24 are conductive; when the second switch 13 is open, the first semiconductor is not supplied with power. The gate G of 25, so the collector C and the emitter E of the first semiconductor 25 are open-circuited. At this time, the DC power supply 10 does not supply power to the load 12, and does not supply power to the anode terminal A of the photocoupler 24. Therefore, the photocoupler 24 There is an open circuit between the first terminal T1 and the second terminal T2 of the .

如圖5所示,本發明直流短路保護裝置的負載12短路保護動作原理如下: As shown in FIG. 5 , the short-circuit protection action principle of the load 12 of the DC short-circuit protection device of the present invention is as follows:

由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的集極電流上升到其相對應的集射極電壓到達高於光電耦合器24的第一端T1與第二端T2之間的導通電壓時,第一半導體25的集射極電壓供電於第二半導體26的閘極G,此時第二半導體26的集極C與射極E導通,於是第一半導體25的集極C與射極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護; It can be seen from the above that when the first switch 11 and the second switch 13 are turned on, the load 12 is powered by the DC power supply 10; when both ends of the load 12 are short-circuited, according to the output characteristic curve table of the first semiconductor 25, when the first semiconductor 25 When the collector current of the first semiconductor 25 rises to the point where the corresponding collector-emitter voltage reaches higher than the turn-on voltage between the first terminal T1 and the second terminal T2 of the photocoupler 24, the collector-emitter voltage of the first semiconductor 25 supplies power to the first terminal T1 and the second terminal T2. At the gate G of the second semiconductor 26, the collector C and the emitter E of the second semiconductor 26 are turned on, so the collector C and the emitter S of the first semiconductor 25 are open-circuited, the DC power supply 10 does not supply power to the short-circuit load 12, and so that the DC power supply 10 is protected;

同理,適當的選擇光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載集極電流亦可達到過載保護的功能。 Similarly, the on-voltage between the first terminal T1 and the second terminal T2 of the optocoupler 24 can be appropriately selected, and the overload protection function can also be achieved in accordance with the overload collector current required by the first semiconductor 25 .

由上述可知,將圖3的第一半導體25與第二半導體26由N型半導體改為絕緣閘極雙極電晶體,而其負載12短路時之保護直流電源10的功能亦相同。 As can be seen from the above, the first semiconductor 25 and the second semiconductor 26 in FIG. 3 are changed from N-type semiconductors to insulated gate bipolar transistors, and the functions of protecting the DC power supply 10 when the load 12 is short-circuited are also the same.

如圖6所示,為本發明直流短路保護裝置第五實施例,自圖中可知,其係將圖2的光電耦合器24的第一端T1與第二端T2連接到第一半導體25的閘 極G與第二半導體26的集極C之間,其他電路結構皆與圖2相同而不贅述。 As shown in FIG. 6 , it is the fifth embodiment of the DC short-circuit protection device of the present invention. As can be seen from the figure, the first terminal T1 and the second terminal T2 of the photocoupler 24 of FIG. 2 are connected to the first terminal T1 and the second terminal T2 of the first semiconductor 25 brake Between the pole G and the collector C of the second semiconductor 26, other circuit structures are the same as those in FIG. 2 and will not be repeated.

如圖6所示,本發明直流短路保護裝置的動作原理如下: As shown in Figure 6, the operating principle of the DC short-circuit protection device of the present invention is as follows:

如圖6所示,當第一開關11導通時,直流電源10的電流經過第一開關11與負載12,再經由第二接線端40到第一半導體25的汲極D與第三電阻器23的第一端,此時第一半導體25的閘極G因無閘極G電壓所以第一半導體25的汲極D與源極S開路,同時因為光電耦合器24的陽極端A無電壓所以光電耦合器24的第一端T1與第二端T2開路,由於第一半導體25的汲極D與源極S開路,及光電耦合器24的第一端T1與第二端T2之間開路,所以負載12無直流電源10供應,但是直流電源10經過負載12到第三電阻器23的第一端到第二端再到第二半導體26的基極B,此時第二半導體26的集極C與射極E導通,其第三電阻器23的功能為限制直流電源10的電流大小,可以保護第二半導體26; As shown in FIG. 6 , when the first switch 11 is turned on, the current of the DC power source 10 passes through the first switch 11 and the load 12 , and then passes through the second terminal 40 to the drain D of the first semiconductor 25 and the third resistor 23 At this time, the gate G of the first semiconductor 25 has no gate G voltage, so the drain D of the first semiconductor 25 is open to the source S, and at the same time, because the anode terminal A of the photocoupler 24 has no voltage, the photoelectric The first terminal T1 and the second terminal T2 of the coupler 24 are open. Since the drain D and the source S of the first semiconductor 25 are open, and the first terminal T1 and the second terminal T2 of the photocoupler 24 are open, so The load 12 is not supplied by the DC power supply 10, but the DC power supply 10 passes through the load 12 to the first end to the second end of the third resistor 23 and then to the base B of the second semiconductor 26, and the collector C of the second semiconductor 26 at this time Conducted with the emitter E, the function of the third resistor 23 is to limit the current of the DC power supply 10, which can protect the second semiconductor 26;

當第二開關13導通時,直流電源10供電於第一電阻器21,到第一半導體25的閘極G,因此第一半導體25的汲極D與源極S導通,此時直流電源10供電於負載12,接著直流電源10供電於第二電阻器22,到光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端T2之間導通;當第二開關13開路時,由於直流電源10不供電於第一半導體25的閘極G,因此第一半導體25的汲極D與源極S開路,此時直流電源10不供電於負載12,同時直流電源10不供電於光電耦合器24的陽極端A,因此光電耦合器24的第一端T1與第二端 T2之間開路。 When the second switch 13 is turned on, the DC power supply 10 supplies power to the first resistor 21 to the gate G of the first semiconductor 25, so the drain D and the source S of the first semiconductor 25 are turned on, and the DC power supply 10 supplies power at this time In the load 12, then the DC power supply 10 supplies power to the second resistor 22 to the anode terminal A of the photocoupler 24, so the first terminal T1 and the second terminal T2 of the photocoupler 24 are conductive; when the second switch 13 When the circuit is open, since the DC power supply 10 does not supply power to the gate G of the first semiconductor 25, the drain D and the source S of the first semiconductor 25 are open-circuited. At this time, the DC power supply 10 does not supply power to the load 12, and the DC power supply 10 does not Power is supplied to the anode terminal A of the photocoupler 24, so the first terminal T1 and the second terminal of the photocoupler 24 Open circuit between T2.

由上述的動作原理可知,將圖6的第一半導體25由N通道金屬氧化半導體場效電晶體改為N型電晶體如同圖3的動作原理,兩者等功能,因此圖6的第一半導體25由N通道金屬氧化半導體場效電晶體可以改為N型電晶體。 It can be seen from the above operating principle that the first semiconductor 25 in FIG. 6 is changed from an N-channel metal-oxide-semiconductor field effect transistor to an N-type transistor, which is the same as the operating principle in FIG. 25 The N-channel metal oxide semiconductor field effect transistor can be changed to an N-type transistor.

由上述的動作原理可知,將圖6的第二半導體26由N型電晶體改為N通道金屬氧化半導體場效電晶體如同圖4的動作原理,兩者等功能,因此圖6的第二半導體26由N型電晶體可以改為N通道金屬氧化半導體場效電晶體。 It can be seen from the above-mentioned operation principle that changing the second semiconductor 26 of FIG. 6 from an N-type transistor to an N-channel metal oxide semiconductor field effect transistor is the same as the operation principle of FIG. 26 can be changed from N-type transistor to N-channel metal oxide semiconductor field effect transistor.

由上述的動作原理可知,將圖6的第一半導體25由N通道金屬氧化半導體場效電晶體改為絶緣閘極雙極電晶體如同圖5的動作原理,兩者等功能,因此圖6的第一半導體25由N通道金屬氧化半導體場效電晶體可以改為絶緣閘極雙極電晶體。 It can be seen from the above-mentioned operation principle that the first semiconductor 25 in FIG. 6 is changed from an N-channel metal oxide semiconductor field effect transistor to an insulated gate bipolar transistor, which is the same as the operation principle of FIG. The first semiconductor 25 can be changed from an N-channel metal oxide semiconductor field effect transistor to an insulated gate bipolar transistor.

如圖6所示,本發明直流短路保護裝置的負載12短路保護動作原理如下: As shown in FIG. 6 , the short-circuit protection action principle of the load 12 of the DC short-circuit protection device of the present invention is as follows:

由上述可知,當第一開關11與第二開關13導通時,負載12由直流電源10供電;當負載12兩端短路時,根據第一半導體25的輸出特性曲線表可知,當第一半導體25的汲極電流上升到其相對應的汲源極電壓到達高於第二半導體26的基射極導通電壓,此時第一半導體25的汲源極電壓供電於第二半導體26的基極B,因此第二半導體26的集極C與射極E導通,因為光電耦合器24的第一端T1與第二端T2之間亦是導通,於是第一半導體25的汲極D與源極S開路,直流電源10不供電於短路負載12,而使直流電源10受到保護;同理,適 當的選擇第三電阻器23的電阻值與光電耦合器24的第一端T1與第二端T2之間的導通電壓,配合第一半導體25所需的過載汲極電流亦可達到過載保護的功能。 It can be seen from the above that when the first switch 11 and the second switch 13 are turned on, the load 12 is powered by the DC power supply 10; when both ends of the load 12 are short-circuited, according to the output characteristic curve table of the first semiconductor 25, when the first semiconductor 25 The drain current of the first semiconductor 25 rises to its corresponding drain-source voltage and is higher than the base-emitter turn-on voltage of the second semiconductor 26. At this time, the drain-source voltage of the first semiconductor 25 supplies power to the base B of the second semiconductor 26, Therefore, the collector C and the emitter E of the second semiconductor 26 are conducting, because the first terminal T1 and the second terminal T2 of the photocoupler 24 are also conducting, so the drain D and the source S of the first semiconductor 25 are open. , the DC power supply 10 does not supply power to the short-circuit load 12, so that the DC power supply 10 is protected; When the resistance value of the third resistor 23 and the turn-on voltage between the first terminal T1 and the second terminal T2 of the optocoupler 24 are selected, the overload drain current required by the first semiconductor 25 can also be used to achieve overload protection. Features.

由上述動作原理可知,將圖2的光電耦合器24的連接位置改變,而其負載12短路時之保護直流電源10的功能亦相同。 It can be seen from the above operating principle that the function of protecting the DC power supply 10 when the load 12 is short-circuited is also the same by changing the connection position of the photocoupler 24 in FIG. 2 .

由上述動作原理可知,其圖2、圖3、圖4與圖5所示的第一半導體25與第二半導體26可以替代變換,其圖6亦可應用圖3、圖4與圖5所示的第一半導體25與第二半導體26亦然可以替代變換,因其動作原理相同而不贅述。 It can be seen from the above operating principle that the first semiconductor 25 and the second semiconductor 26 shown in FIG. 2 , FIG. 3 , FIG. 4 and FIG. The first semiconductor 25 and the second semiconductor 26 can also be replaced and transformed, and the operation principle is the same and will not be described in detail.

由上述動作原理與功能動作的說明可知本發明可據於實施。 From the description of the above-mentioned operation principle and functional operation, it can be seen that the present invention can be implemented accordingly.

10:直流電源 10: DC power supply

11:第一開關 11: The first switch

12:負載 12: Load

13:第二開關 13: Second switch

20:本發明直流短路保護裝置 20: DC short-circuit protection device of the present invention

21:第一電阻器 21: First resistor

22:第二電阻器 22: Second resistor

23:第三電阻器 23: Third resistor

24:光電耦合器 24: Photocoupler

25:第一半導體 25: First Semiconductor

26:第二半導體 26: Second Semiconductor

27:接地端 27: Ground terminal

30:第一接線端 30: The first terminal

40:第二接線端 40: The second terminal

50:第三接線端 50: The third terminal

Claims (10)

一種直流短路保護裝置,為具有直流電源在供電過程中發生負載過載或短路保護該直流電源之功能,該直流短路保護裝置,包括: A DC short-circuit protection device has the function of protecting the DC power supply from overload or short-circuit of the DC power supply during the power supply process. The DC short-circuit protection device includes: 一第一半導體,具有一汲極或集極、一源極或射極與一閘極或基極; a first semiconductor having a drain or collector, a source or emitter and a gate or base; 一第二半導體,具有一汲極或集極、一源極或射極與一閘極或基極,該汲極或集極連接該第一半導體的閘極或基極,該源極或射極連接該第一半導體的源極或射極; A second semiconductor has a drain or collector, a source or emitter and a gate or base, the drain or collector is connected to the gate or base of the first semiconductor, the source or emitter electrode is connected to the source or emitter of the first semiconductor; 一第一電阻器,具有一第一端與一第二端,該第二端連接該第一半導體的閘極或基極與該第二半導體的汲極或集極,具有限制電流的功能; a first resistor with a first end and a second end, the second end is connected to the gate or base of the first semiconductor and the drain or collector of the second semiconductor, and has the function of limiting current; 一第二電阻器,具有一第一端與一第二端,該第一端與該第一電阻器的第一端連接,具有限制電流的功能; a second resistor, having a first end and a second end, the first end is connected to the first end of the first resistor, and has the function of limiting current; 一第三電阻器,具有一第一端與一第二端,該第一端連接該第一半導體的汲極或集極,具有限制電流的功能;及 a third resistor, having a first end and a second end, the first end is connected to the drain or collector of the first semiconductor, and has the function of limiting current; and 一光電耦合器,具有一陽極端、一陰極端、一第一端與一第二端,該第一端連接該第三電阻器的第二端,該第二端連接該第二半導體的閘極或基極,該陽極端連接該第二電阻器的第二端,該陰極端、該第一半導體的源極或射極及該第二半導體的源極或射極連接在一起成為接地端或第三接線端用以提供外部電壓源的負電端連接之用。 An optocoupler has an anode end, a cathode end, a first end and a second end, the first end is connected to the second end of the third resistor, and the second end is connected to the gate of the second semiconductor or base, the anode terminal is connected to the second terminal of the second resistor, the cathode terminal, the source or emitter of the first semiconductor and the source or emitter of the second semiconductor are connected together to become the ground terminal or The third terminal is used for connecting the negative terminal of the external voltage source. 如申請專利範圍第1項所述的直流短路保護裝置,其中該第一電阻器的第一端與該第二電阻器的第一端連接在一起成為第一接線端,用以提供外部電壓源的正 電端連接之用。 The DC short circuit protection device as claimed in claim 1, wherein the first end of the first resistor and the first end of the second resistor are connected together to form a first terminal for providing an external voltage source positive For electrical connection. 如申請專利範圍第1項所述的直流短路保護裝置,其中該第一半導體汲極或集極與該第三電阻器的第一端連接在一起成為第二接線端,用以提供外部的該負載連接之用。 The DC short circuit protection device as described in claim 1, wherein the first semiconductor drain or collector and the first end of the third resistor are connected together to form a second terminal for providing the external For load connection. 如申請專利範圍第1項所述的直流短路保護裝置,其中該第一半導體或該第二半導體係為N通道金屬氧化半導體場效電晶體、N型電晶體或絶緣閘極雙極電晶體。 The DC short circuit protection device of claim 1, wherein the first semiconductor or the second semiconductor is an N-channel metal oxide semiconductor field effect transistor, an N-type transistor or an insulated gate bipolar transistor. 如申請專利範圍第1項所述的直流短路保護裝置,其中該光電耦合器係為電晶體輸出型、達靈頓複合電晶體輸出型或光電繼電器。 The DC short-circuit protection device according to claim 1, wherein the optocoupler is a transistor output type, a Darlington composite transistor output type or a photorelay. 一種直流短路保護裝置,為具有直流電源在供電過程中發生負載過載或短路保護該直流電源之功能,該直流短路保護裝置,包括: A DC short-circuit protection device has the function of protecting the DC power supply from overload or short-circuit of the DC power supply during the power supply process. The DC short-circuit protection device includes: 一第一半導體,具有一汲極或集極、一源極或射極與一閘極或基極; a first semiconductor having a drain or collector, a source or emitter and a gate or base; 一第二半導體,具有一集極或汲極、一射極或源極與一基極或閘極,該射極或源極連接該第一半導體的源極或射極; a second semiconductor having a collector or drain, an emitter or source and a base or gate, the emitter or source is connected to the source or emitter of the first semiconductor; 一第一電阻器,具有一第一端與一第二端,該第二端連接該第一半導體的閘極或基極,具有限制電流的功能; a first resistor, having a first end and a second end, the second end is connected to the gate or base of the first semiconductor, and has the function of limiting current; 一第二電阻器,具有一第一端與一第二端,該第一端與該第一電阻器的第一端連接,具有限制電流的功能; a second resistor, having a first end and a second end, the first end is connected to the first end of the first resistor, and has the function of limiting current; 一第三電阻器,具有一第一端與一第二端,該第一端連接該第一半導體的汲極或集極,該第二端連接該第二半導體的基極或閘極,具有限制電流的功能; A third resistor has a first end and a second end, the first end is connected to the drain or collector of the first semiconductor, the second end is connected to the base or gate of the second semiconductor, and has The function of limiting current; and 一光電耦合器,具有一陽極端、一陰極端、一第一端與一第二端,該第一端連接該第一電阻器的第二端及該第一半導體的閘極或基極,該第二端連接該第二半導體的集極或汲極,該陽極端連接該第二電阻器的第二端,該陰極端、該第一半導體的源極或射極及該第二半導體的射極或源極連接在一起成為接地端或第三接線端,用以提供外部電壓源的負電端連接之用。 An optocoupler has an anode end, a cathode end, a first end and a second end, the first end is connected to the second end of the first resistor and the gate or base of the first semiconductor, the The second terminal is connected to the collector or drain of the second semiconductor, the anode terminal is connected to the second terminal of the second resistor, the cathode terminal, the source or emitter of the first semiconductor and the emitter of the second semiconductor The poles or sources are connected together to form a ground terminal or a third terminal, which is used for connecting the negative terminal of the external voltage source. 如申請專利範圍第6項所述的直流短路保護裝置,其中該第一電阻器的第一端與該第二電阻器的第一端連接在一起成為第一接線端,用以提供外部電壓源的正電端連接之用。 The DC short circuit protection device as claimed in claim 6, wherein the first end of the first resistor and the first end of the second resistor are connected together to form a first terminal for providing an external voltage source The positive terminal of the connection is used. 如申請專利範圍第6項所述的直流短路保護裝置,其中該第一半導體汲極或集極與該第三電阻器的第一端連接在一起成為第二接線端,用以提供外部的該負載連接之用。 The DC short circuit protection device as claimed in claim 6, wherein the first semiconductor drain or collector and the first end of the third resistor are connected together to form a second terminal for providing the external For load connection. 如申請專利範圍第6項所述的直流短路保護裝置,其中該第一半導體或該第二半導體係為N通道金屬氧化半導體場效電晶體、N型電晶體或絶緣閘極雙極電晶體。 The DC short circuit protection device as claimed in claim 6, wherein the first semiconductor or the second semiconductor is an N-channel metal oxide semiconductor field effect transistor, an N-type transistor or an insulated gate bipolar transistor. 如申請專利範圍第6項所述的直流短路保護裝置,其中該光電耦合器係為電晶體輸出型、達靈頓複合電晶體輸出型或光電繼電器。 The DC short-circuit protection device according to claim 6, wherein the optocoupler is a transistor output type, a Darlington composite transistor output type or a photorelay.
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