TW202322684A - Circuit board structure - Google Patents
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- TW202322684A TW202322684A TW111120375A TW111120375A TW202322684A TW 202322684 A TW202322684 A TW 202322684A TW 111120375 A TW111120375 A TW 111120375A TW 111120375 A TW111120375 A TW 111120375A TW 202322684 A TW202322684 A TW 202322684A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
- H05K1/0222—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors for shielding around a single via or around a group of vias, e.g. coaxial vias or vias surrounded by a grounded via fence
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Abstract
Description
本發明是有關於一種基板結構,且特別是有關於一種電路板結構。The present invention relates to a substrate structure, and in particular to a circuit board structure.
在現有電路板中,同軸穿孔(coaxial via)的設計在內部導體層與外部導體層之間需要有一層或一層以上的絕緣層來作阻絕,其中形成絕緣層的方式是透過壓合增層的方式來達成。因此在同軸穿孔的兩端會有阻抗不匹配且會出現電磁干擾(electromagnetic interference, EMI)屏蔽缺口,進而影響高頻訊號完整性。In the existing circuit board, the design of the coaxial via (coaxial via) requires one or more insulating layers between the inner conductor layer and the outer conductor layer for insulation, and the way to form the insulating layer is through lamination. way to achieve. Therefore, there will be impedance mismatch at both ends of the coaxial via and electromagnetic interference (EMI) shielding gaps will appear, thereby affecting the integrity of high-frequency signals.
本發明提供一種電路板結構,其可有效的阻止能量損失及減少雜訊干擾,可具有較佳的訊號完整性。The invention provides a circuit board structure, which can effectively prevent energy loss and reduce noise interference, and can have better signal integrity.
本發明的電路板結構,其包括一基底、一第三介電層、一第四介電層、一第一外部線路層、一第二外部線路層、一導電通孔、一第一環型擋牆以及一第二環型擋牆。基底具有一開口,且包括一第一介電層、一第二介電層、一第一內部線路層、一第二內部線路層以及一導電連接層。開口貫穿第一介電層。第一介電層具有彼此相對的一第一表面與一第二表面。第一內部線路層配置於第一表面上,而第二內部線路層配置於第二表面上。導電連接層覆蓋開口的內壁且連接第一內部線路層與第二內部線路層。第二介電層填滿開口,且第二介電層具有彼此相對的一第三表面與一第四表面。第三介電層覆蓋第一內部線路層與第三表面。第四介電層覆蓋第二內部線路層與第四表面。第一外部線路層配置於第三介電層上。第二外部線路層配置於第四介電層上。導電通孔貫穿第三介電層、第二介電層以及第四介電層,且電性連接第一外部線路層與第二外部線路層。第一環型擋牆配置於第三介電層內、圍繞導電通孔且電性連接第一外部線路層以及第一內部線路層。第二環型擋牆配置於第四介電層內、圍繞導電通孔且電性連接第二外部線路層以及第二內部線路層。The circuit board structure of the present invention comprises a substrate, a third dielectric layer, a fourth dielectric layer, a first external circuit layer, a second external circuit layer, a conductive via hole, a first annular A retaining wall and a second annular retaining wall. The base has an opening and includes a first dielectric layer, a second dielectric layer, a first internal circuit layer, a second internal circuit layer and a conductive connection layer. The opening penetrates the first dielectric layer. The first dielectric layer has a first surface and a second surface opposite to each other. The first internal circuit layer is configured on the first surface, and the second internal circuit layer is configured on the second surface. The conductive connection layer covers the inner wall of the opening and connects the first internal circuit layer and the second internal circuit layer. The second dielectric layer fills the opening, and the second dielectric layer has a third surface and a fourth surface opposite to each other. The third dielectric layer covers the first internal circuit layer and the third surface. The fourth dielectric layer covers the second internal circuit layer and the fourth surface. The first outer circuit layer is configured on the third dielectric layer. The second outer circuit layer is configured on the fourth dielectric layer. The conductive via penetrates through the third dielectric layer, the second dielectric layer and the fourth dielectric layer, and electrically connects the first outer circuit layer and the second outer circuit layer. The first annular retaining wall is disposed in the third dielectric layer, surrounds the conductive via hole and electrically connects the first outer circuit layer and the first inner circuit layer. The second annular retaining wall is disposed in the fourth dielectric layer, surrounds the conductive via hole and electrically connects the second outer circuit layer and the second inner circuit layer.
本發明的電路板結構,其包括一第一基底、一第二基底、一第三介電層、一第四介電層、一第一環型擋牆以及一第二環型擋牆。第一基底包括一第一介電層、一第一外部線路層、一第一導電通孔以及一第一內部線路層。第一外部線路層與第一內部線路層分別位於第一介電層的相對兩側上。第一導電通孔貫穿第一介電層且電性連接第一外部線路層與第一內部線路層。第二基底包括一第二介電層、一第二外部線路層、一第二導電通孔以及一第二內部線路層。第二外部線路層與第二內部線路層分別位於第二介電層的相對兩側上。第二導電通孔貫穿第二介電層且電性連接第二外部線路層與第二內部線路層。第三介電層覆蓋第一內部線路層。第四介電層覆蓋第二內部線路層。第一環型擋牆配置於第三介電層內且電性連接第一內部線路層。第一環型擋牆在第一基底上的正投影圍繞第一導電通孔。第二環型擋牆配置於第四介電層內且電性連接第二內部線路層。第二環型擋牆在第二基底上的正投影圍繞第二導電通孔。第三介電層連接第四介電層,且部分第一環型擋牆連接部分第二環型擋牆,而使第一基底對接至第二基底上。The circuit board structure of the present invention includes a first base, a second base, a third dielectric layer, a fourth dielectric layer, a first annular retaining wall and a second annular retaining wall. The first substrate includes a first dielectric layer, a first outer circuit layer, a first conductive via and a first inner circuit layer. The first outer circuit layer and the first inner circuit layer are respectively located on opposite sides of the first dielectric layer. The first conductive via penetrates the first dielectric layer and electrically connects the first outer circuit layer and the first inner circuit layer. The second substrate includes a second dielectric layer, a second outer circuit layer, a second conductive via and a second inner circuit layer. The second outer circuit layer and the second inner circuit layer are respectively located on opposite sides of the second dielectric layer. The second conductive via penetrates through the second dielectric layer and electrically connects the second outer circuit layer and the second inner circuit layer. The third dielectric layer covers the first internal circuit layer. The fourth dielectric layer covers the second inner circuit layer. The first annular retaining wall is disposed in the third dielectric layer and electrically connected to the first inner circuit layer. An orthographic projection of the first annular retaining wall on the first base surrounds the first conductive via. The second annular retaining wall is disposed in the fourth dielectric layer and electrically connected to the second inner circuit layer. The orthographic projection of the second annular retaining wall on the second base surrounds the second conductive via. The third dielectric layer is connected to the fourth dielectric layer, and part of the first ring-shaped retaining wall is connected to part of the second ring-shaped retaining wall, so that the first base is connected to the second base.
基於上述,在本發明的電路板結構的設計中,環型擋牆圍繞導電通孔,其中環型擋牆為面屏(closed boundary)式的封閉結構,可以降低電磁干擾(EMI)且完全涵蓋導電通孔的訊號。相較於現有技術中在導電通孔的周圍設置具有間隙的單排盲孔而言,本發明的電路板結構可有效的阻止能量損失及減少雜訊干擾,可具有較佳的訊號完整性。Based on the above, in the design of the circuit board structure of the present invention, the ring-shaped retaining wall surrounds the conductive through hole, wherein the ring-shaped retaining wall is a closed boundary structure, which can reduce electromagnetic interference (EMI) and completely cover Signal via conductive vias. Compared with the single row of blind holes with gaps around the conductive vias in the prior art, the circuit board structure of the present invention can effectively prevent energy loss and reduce noise interference, and has better signal integrity.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
圖1A是依照本發明的一實施例的一種電路板結構的俯視示意圖。圖1B是沿圖1A的線I-I的剖面示意圖。圖1C是沿圖1A的線II-II的剖面示意圖。圖1D是沿圖1A的線III-III的剖面示意圖。請同時參考圖1A、圖1B、圖1C以及圖1D,在本實施例中,電路板結構100包括一基底110、一第三介電層120、一第四介電層130、一第一外部線路層140、一第二外部線路層150、一導電通孔160、一第一環型擋牆170以及一第二環型擋牆180。FIG. 1A is a schematic top view of a circuit board structure according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view along line I-I of FIG. 1A . FIG. 1C is a schematic cross-sectional view along line II-II of FIG. 1A . FIG. 1D is a schematic cross-sectional view along line III-III of FIG. 1A . Please refer to FIG. 1A, FIG. 1B, FIG. 1C and FIG. 1D at the same time. In this embodiment, the
詳細來說,在本實施例中,基底110具有一開口H,且包括一第一介電層111、一第二介電層113、一第一內部線路層115、一第二內部線路層117以及一導電連接層119。開口H貫穿第一介電層111,且第一介電層111具有彼此相對的一第一表面S1與一第二表面S2。第一內部線路層115配置於第一介電層111的第一表面S1上,而第二內部線路層117第一介電層111的配置於第二表面S2上。導電連接層119覆蓋開口H的內壁且連接第一內部線路層115與第二內部線路層117。第二介電層113填滿開口H,且第二介電層113具有彼此相對的一第三表面S3與一第四表面S4,其中第三表面S3與第四表面S4分別切齊第一內部線路層115與第二內部線路層117。此處,第一介電層111可以使用一般介電材料,其中第一介電層111的介電常數可低於4.0,而第一介電層111的介電損耗(Df)可低於0.01,藉此提供適當的阻抗匹配。第二介電層113的介電常數可低於5.0,而第二介電層113的介電損耗(Df)則大於0且小於0.025,以提供適當的絕緣性與阻抗匹配外,還可降低介電耗損。In detail, in this embodiment, the
再者,本實施例的第三介電層120覆蓋第一內部線路層115與第二介電層113的第三表面S3。第四介電層130覆蓋第二內部線路層117與第二介電層113的第四表面S4。第一外部線路層140配置於第三介電層120上,而第二外部線路層150配置於第四介電層130上。導電通孔160貫穿第三介電層120、第二介電層113以及第四介電層130,且電性連接第一外部線路層140與第二外部線路層150。導電通孔160包括一貫孔162、一導電材料層164以及一填孔材料166。貫孔162貫穿第三介電層120、第二介電層113以及第四介電層130。導電材料層164覆蓋貫孔162的內壁且電性連接第一外部線路層140與第二外部線路層150。填孔材料166填滿貫孔162,且第一外部線路層140與第二外部線路層150分別覆蓋填孔材料166彼此相對的一上表面167與一下表面169。此處,第一外部線路層140與第二外部線路層150為多層結構層,分別是由銅箔層C1、鍍銅層C2以及罩蓋層C3所組成,其中鍍銅層C2位於銅箔層C1與罩蓋層C3之間,且鍍銅層C2與導電材料層164屬同一膜層。罩蓋層C3例如是銅層,但不以此為限,覆蓋填孔材料166的上表面167與下表面169。Furthermore, the third
特別是,在本實施例中,第一環型擋牆170內埋於第三介電層120內、圍繞導電通孔160且電性連接第一外部線路層140以及第一內部線路層115。第二環型擋牆180內埋於第四介電層130內、圍繞導電通孔160且電性連接第二外部線路層150以及第二內部線路層117。第一外部線路層140、導電通孔160以及第二外部線路層150而定義出一訊號路徑L1。第一外部線路層150、第一環型擋牆170、第一內部線路層115、連接線路層119、第二內部線路層117、第二環型擋牆180以及第二外部線路層150定義出一接地路徑L2,且接地路徑L2環繞訊號路徑L1。In particular, in this embodiment, the first ring-shaped
更進一步來說,請參考圖1B,第一外部線路層140包括一第一訊號線路142以及一第一接地線路144。第二外部線路層150包括一第二訊號線路152以及一第二接地線路154。第一訊號線路142、導電通孔160以及第二訊號線路152定義出訊號路徑L1。第一接地線路144、第一環型擋牆170、第一內部線路層115、導電連接層119、第二內部線路層117、第二環型擋牆180以及第二接地線路154定義出接地路徑L2。由於訊號路徑L1被接地路徑L2所環繞且呈封閉性包圍,因此可形成良好的高頻高速迴路。More specifically, please refer to FIG. 1B , the first
此外,請參考圖1C以及圖1D,第一訊號線路142被第一環型擋牆170以及第一內部線路層115所定義的接地路徑L3所環繞且呈封閉性包圍,而第二訊號線路152被第二環型擋牆180以及第二內部線路層117所定義的接地路徑L4所環繞且呈封閉性包圍,因此可形成良好的高頻高速迴路。In addition, please refer to FIG. 1C and FIG. 1D , the
在製程上,若第三介電層120與第四介電層130例如是光成像介電質(photoimageable dielectric,PID)材料,則可先乾膜壓合(Dry-Film Lamination)至基底110的相對兩側上,且透過光微影製程(photolithography process)在第三介電層120與第四介電層130上分別形成寬度例如是100微米而直徑例如是600微米的封閉式溝槽。或者是,若第三介電層120與第四介電層130例如是預浸料(pre-preg)或味之素增補膜(Ajinomoto Build-up Film,ABF)時,則可以雷射燒蝕的方式在第三介電層120與第四介電層130上分別形成寬度例如是100微米而直徑例如是600微米的封閉式溝槽。接著,將導電金屬膠(如導電銅膏)以瞬時液相燒結(Transient Liquid Phase Sintering,TLPS)塗佈於溝槽內並進行風乾,可具有導電與導熱的效果,且適於與任何金屬材質進行接合,並且不會再因受熱而轉變回液態,而完成第一環型擋牆170第二環型擋牆180的製作。In terms of manufacturing process, if the third
須說明的是,在本實施例中,第一環型擋牆170與第二環型擋牆180是透過在第三介電層120及第四介電層130內塞導電膏的方式而形成,因而第一環型擋牆170與第二環型擋牆180分別為實心的擋牆結構,但不以此為限,環型擋牆的導電材料也以可是金屬電鍍層、或化學鍍金屬層。於另一未繪示的實施例中,第一環型擋牆與第二環型擋牆亦可透過在第三介電層及第四介電層內以金屬電鍍層、或化學鍍金屬層、或金屬導電膏的方式來形成,因而第一環型擋牆與第二環型擋牆可分別為凹槽狀的擋牆結構,此仍屬於本發明所欲保護的範圍。It should be noted that, in this embodiment, the first
簡言之,本實施例由第一訊號線路142、導電通孔160以及第二訊號線路152所定義的訊號路徑L1被由第一接地線路144、第一環型擋牆170、第一內部線路層115、導電連接層119、第二內部線路層117、第二環型擋牆180以及第二接地線路154所定義出接地路徑L2環繞包圍住。意即,可傳輸5G等高頻高速訊號的訊號路徑L1的周圍設置封閉性佳的接地路徑L2,藉此可形成良好的高頻高速迴路,而使得本實施例的電路板結構100可具有較佳的訊號完整性。此處,所述的高頻是指頻率大於1GHz;而所述的高速是指資料傳輸的速度大於100Mbps。再者,由於第一環型擋牆170第二環型擋牆180為面屏(closed boundary)式的封閉結構,可以完全涵蓋導電通孔160的訊號。相較於現有技術中在導電通孔的周圍設置具有間隙的單排盲孔而言,本實施例的電路板結構100可有效的阻止能量損失及減少雜訊干擾,可具有較佳的訊號完整性。此外,導電通孔160、導電連接層119以及第二介電層113定義出同軸穿孔(coaxial via),其中第二介電層113位於導電通孔160與導電連接層119之間。相較於現有技術中以壓合絕緣層的增層法方式來阻絕同軸穿孔的內部導體層與外部導體層而言,本實施例的電路板結構100的製作方法可避免產生阻抗不匹配而影響高頻訊號的完整性的問題。In short, in this embodiment, the signal path L1 defined by the
圖2A是本發明的另一實施例的一種電路板結構的剖面示意圖。圖2B是圖2A的電路板結構的另一局部剖面示意圖。圖2C是圖2A的電路板結構的局部立體示意圖。圖2D是包括圖2A的電路板結構的一種電子裝置的局部剖面示意圖。圖3A是圖2A電路板結構的第一基底、第三介電層以及第一環型擋牆俯視示意圖。圖3B是沿圖3A的線A-A的剖面示意圖,即位於位置P1的剖面示意圖。圖3C是沿圖3A的線B-B的剖面示意圖,即位於位置P2的剖面示意圖。圖3D是沿圖3A的線C-C的剖面示意圖,即位於位置P3的剖面示意圖。圖4A是繪示圖2A的電路板結構的第二基底、第四介電層以及第二環型擋牆俯視示意圖。圖4B是沿圖4A的線A-A的剖面示意圖,即位於位置P1的剖面示意圖。圖4C是沿圖4A的線B-B的剖面示意圖,即位於位置P2的剖面示意圖。圖4D是沿圖4A的線C-C的剖面示意圖,即位於位置P3的剖面示意圖。須說明的是,圖2A是沿著圖3A與圖4A中的線E-E的剖面示意圖,而圖2B是繪示在位置P1處的第一基底210與在位置P1處的第二基底220對接後的剖面示意圖。FIG. 2A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 2B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 2A . FIG. 2C is a partial perspective view of the circuit board structure in FIG. 2A . FIG. 2D is a schematic partial cross-sectional view of an electronic device including the circuit board structure of FIG. 2A . 3A is a schematic top view of the first substrate, the third dielectric layer and the first ring-shaped retaining wall of the circuit board structure in FIG. 2A . FIG. 3B is a schematic cross-sectional view along line A-A of FIG. 3A , that is, a schematic cross-sectional view at position P1. FIG. 3C is a schematic cross-sectional view along line B-B in FIG. 3A , that is, a schematic cross-sectional view at position P2. FIG. 3D is a schematic cross-sectional view along line C-C of FIG. 3A , that is, a schematic cross-sectional view at position P3. 4A is a schematic top view illustrating the second base, the fourth dielectric layer and the second ring-shaped retaining wall of the circuit board structure of FIG. 2A . FIG. 4B is a schematic cross-sectional view along line A-A of FIG. 4A , that is, a schematic cross-sectional view at position P1. FIG. 4C is a schematic cross-sectional view along line B-B in FIG. 4A , that is, a schematic cross-sectional view at position P2. FIG. 4D is a schematic cross-sectional view along line C-C of FIG. 4A , that is, a schematic cross-sectional view at position P3. It should be noted that FIG. 2A is a schematic cross-sectional view along the line E-E in FIG. 3A and FIG. sectional schematic diagram.
首先,請先參考圖2A、圖2C、圖3A以及圖4A,在本實施例中,電路板結構200包括一第一基底210、一第二基底220、一第三介電層230、一第四介電層240、一第一環型擋牆250以及一第二環型擋牆260。First, please refer to FIG. 2A, FIG. 2C, FIG. 3A and FIG. 4A. In this embodiment, the circuit board structure 200 includes a
詳細來說,請先參考圖2A、圖3A、圖3B、圖3C以及圖3D,在本實施例中,第一基底210包括一第一介電層212、一第一外部線路層214、一第一導電通孔216以及一第一內部線路層218。第一外部線路層214與第一內部線路層218分別位於第一介電層212的相對兩側上。第一導電通孔貫216穿第一介電層212且電性連接第一外部線路層214與第一內部線路層218。此處,如圖3B所示,本實施例的第一導電通孔216包括一第一貫孔T1、一第一導電材料層M1以及一第一填孔材料F1。第一貫孔T1貫穿第一介電層212,而第一導電材料層M1覆蓋第一貫孔T1的內壁且電性連接第一外部線路層214與第一內部線路層218。第一填孔材料F1填滿第一貫孔T1,且第一內部線路層218與第一外部線路層214分別覆蓋第一填孔材料F1彼此相對的一第一上表面F11與一第一下表面F12。第三介電層230覆蓋第一基底210的第一內部線路層218。第一環型擋牆250內埋於第三介電層230內且電性連接第一內部線路層218,其中第一環型擋牆250在第一基底210上的正投影圍繞第一導電通孔216。In detail, please refer to FIG. 2A, FIG. 3A, FIG. 3B, FIG. 3C and FIG. 3D. The first conductive via 216 and a first
進一步來說,請再同時參考圖3A、圖3B以及圖3D,本實施例的電路板結構200a還包括一第一接合部270以及一第二接合部275。第一接合部270與第二接合部275配置於第一內部線路層218上,且第一環型擋牆250環繞第一接合部270與第二接合部275,其中第一接合部270對應第一導電通孔216設置。再者,本實施例的第一內部線路層218包括一第一訊號線路218a以及一第一接地線路218b。第一環型擋牆250配置於第一接地線路218b上,而第一接合部270與第二接合部275配置於第一訊號線路218a上。Further, please refer to FIG. 3A , FIG. 3B and FIG. 3D at the same time, the
在製程上,第一接合部270以及第二接合部275與第一環型擋牆250同時形成。詳細來說,若第三介電層230例如是光成像介電質(photoimageable dielectric,PID)材料,則可先乾膜壓合(Dry-Film Lamination)至第一基底210的相對兩側上,且透過光微影製程(photolithography process)在第三介電層230上形成封閉式溝槽以及開口。或者是,若第三介電層230例如是預浸料(pre-preg)或味之素增補膜(Ajinomoto Build-up Film,ABF)時,則可以雷射燒蝕的方式在第三介電層230上形成封閉式溝槽以及開口。接著,將導電金屬膠(如導電銅膏)以瞬時液相燒結(Transient Liquid Phase Sintering,TLPS)塗佈於封閉式溝槽以及開口內並進行風乾,可具有導電與導熱的效果,且適於與任何金屬材質進行接合,並且不會再因受熱而轉變回液態,而完成形成在封閉式溝槽的第一環型擋牆250以及形成在開口內的第一接合部270以及第二接合部275的製作。此處,第一接合部270的寬度以及第二接合部275的寬度分別大於第一環型擋牆250的寬度。In terms of manufacturing process, the first
接著,請參考圖2A、圖4A、圖4B、圖4C以及圖4D,在本實施例中,第二基底220包括一第二介電層222、一第二外部線路層224、一第二導電通孔226以及一第二內部線路層228。第二外部線路層224與第二內部線路層228分別位於第二介電層222的相對兩側上。第二導電通孔226貫穿第二介電層222且電性連接第二外部線路層224與第二內部線路層228。如圖4B所示,本實施例的第二導電通孔226包括一第二貫孔 T2、一第二導電材料層M2以及一第二填孔材料F2。第二貫孔T2貫穿第二介電層222,而第二導電材料層M2覆蓋第二貫孔T2的內壁且電性連接第二外部線路層224與第二內部線路層228。第二填孔材料F2填滿第二貫孔T2,且第二內部線路層228與第二外部線路層224分別覆蓋第二填孔材料F2彼此相對的一第二上表面F21與一第二下表面F22。第四介電層240覆蓋第二基底220的第二內部線路層228。第二環型擋牆260內埋於第四介電層240內且電性連接第二內部線路層228,其中第二環型擋牆260在第二基底220上的正投影圍繞第二導電通孔226。Next, please refer to FIG. 2A, FIG. 4A, FIG. 4B, FIG. 4C and FIG. 4D. In this embodiment, the
進一步來說,請再同時參考圖4A、圖4B以及圖4D,本實施例的電路板結構200a還包括一第三接合部280以及一第四接合部285。第三接合部280與第四接合部285配置於第二內部線路層228上,且第二環型擋牆260環繞第三接合部280與第四接合部285,其中第三接合部280對應第二導電通孔226設置。再者,本實施例的第二內部線路層228包括一第二訊號線路228a以及一第二接地線路228b。第二環型擋牆260配置於第二接地線路228b上,而第三接合部280以及第四接合部285配置於第二訊號線路228a上。Further, please refer to FIG. 4A , FIG. 4B and FIG. 4D at the same time, the
在製程上,第三接合部280以及第四接合部285與第二環型擋牆260同時形成。詳細來說,若第四介電層240例如是光成像介電質(photoimageable dielectric,PID)材料,則可先乾膜壓合(Dry-Film Lamination)至第二基底220的相對兩側上,且透過光微影製程(photolithography process)在第四介電層240上形成封閉式溝槽以及開口。或者是,若第四介電層240例如是預浸料(pre-preg)或味之素增補膜(Ajinomoto Build-up Film,ABF)時,則可以雷射燒蝕的方式在第四介電層240上形成封閉式溝槽以及開口。接著,將導電金屬膠(如導電銅膏)以瞬時液相燒結(Transient Liquid Phase Sintering,TLPS)塗佈於封閉式溝槽以及開口內並進行風乾,可具有導電與導熱的效果,且適於與任何金屬材質進行接合,並且不會再因受熱而轉變回液態,而完成形成在封閉式溝槽的第二環型擋牆260以及形成在開口內的第三接合部280以及第四接合部285的製作。此處,第三接合部280的寬度以及第四接合部285的寬度分別大於第二環型擋牆260的寬度。In terms of manufacturing process, the third
接著,請同時參考圖2A、圖2B以及圖2C,第三介電層230連接第四介電層240,且部分第一環型擋牆250連接部分第二環型擋牆260,而使第一基底210對接至第二基底220上。此時,第一接合部270接合至第三接合部280,第一導電通孔216重疊第二導電通孔226、第一接合部270以及第三接合部280。第二接地線路228b、第二環型擋牆260、第一環型擋牆250以及第一接地線路218b定義出一接地路徑L5,且接地路徑L5環繞第一接合部270與第三接合部280。也就是說,本實施例是將高頻高速訊號設置在內層(即第一訊號線路218a與第二訊號線路228a),而其周圍設置封閉性佳的接地路徑L5,藉此可形成良好的高頻高速迴路,而使得本實施例的電路板結構200a可具有較佳的訊號完整性。Next, please refer to FIG. 2A, FIG. 2B and FIG. 2C at the same time, the third
此外,請參考圖2D,在本實施例中,電子裝置10包括上述例如是圖2B的電路板結構200a以及電子元件20,其中電子元件20電性連接電路板結構200a,且電子元件20包括多個接墊22。此外,本實施例的電子裝置10還包括多個連接件30,配置於電路板結構200a的第一基底210的第一外部線路層214與電子元件20的接墊22之間,其中電子元件20透過連接件30與電路板結構200a電性連接。此處,連接件30例如是銲球,但不以此為限。在應用上,可在電路板結構200a相對於電子元件20的另一側上設置天線結構,並使天線結構與電路板結構200a的第二基底220的第一外部線路層224電性連接。在積體電路與天線的應用上,本實施例的電路板結構200a可解決同一平面訊號干擾的問題,可降低訊號能量損失及減少雜訊干擾,進而可提升訊號傳輸可靠度。In addition, please refer to FIG. 2D. In this embodiment, the
圖5A是本發明的另一實施例的一種電路板結構的剖面示意圖。圖5B是圖5A的電路板結構的另一局部剖面示意圖。請同時參考圖2A、圖2B、圖5A以及圖5B,本實施例的電路板結構200b與上述的電路板結構200a相似,兩者差異在於:本實施例是位置P1處的第一基底210對接至位置P3處的第二基底220。 第一基底210對接至第二基底220上時,第一接合部270接合至第四接合部285,而部分第一環型擋牆250接合至部分第二環型擋牆260。此時,第一導電通孔216不重疊第二導電通孔226,且第一導電通孔216重疊第一接合部270以及第四接合部285,藉此形成扇出型(fan-out)的電路板結構200b,以利後續的多樣化的應用。FIG. 5A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 5B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 5A . Please refer to FIG. 2A, FIG. 2B, FIG. 5A and FIG. 5B at the same time. The
圖6A是本發明的另一實施例的一種電路板結構的剖面示意圖。圖6B是圖6A的電路板結構的另一局部剖面示意圖。請同時參考圖2A、圖2B、圖6A以及圖6B,本實施例的電路板結構200c與上述的電路板結構200a相似,兩者差異在於:本實施例是位置P3處的第一基底210對接至位置P1處的第二基底220。第一基底210對接至第二基底220上時,第二接合部275接合至第三接合部280,部分第一環型擋牆250接合至部分第二環型擋牆260。此時,第一導電通孔216不重疊第二導電通孔226,且第二導電通孔226重疊第三接合部280以及第二接合部275,藉此形成扇出型(fan-out)的電路板結構200c,以利後續的多樣化的應用。FIG. 6A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 6B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 6A . Please refer to FIG. 2A, FIG. 2B, FIG. 6A and FIG. 6B at the same time. The
圖7A是本發明的另一實施例的一種電路板結構的剖面示意圖。圖7B是圖7A的電路板結構的另一局部剖面示意圖。請同時參考圖2A、圖2B、圖7A以及圖7B,本實施例的電路板結構200d與上述的電路板結構200a相似,兩者差異在於:本實施例是位置P3處的第一基底210對接至位置P3處的第二基底220。第一基底210對接至第二基底220上時,第二接合部275接合至第四接合部285,部分第一環型擋牆250接合至部分第二環型擋牆260。此時,第一導電通孔216不重疊第二導電通孔226、第二接合部275以及第四接合部285,藉此形成扇出型(fan-out)的電路板結構200d,以利後續的多樣化的應用。FIG. 7A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 7B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 7A . Please refer to FIG. 2A, FIG. 2B, FIG. 7A and FIG. 7B at the same time. The
綜上所述,在本發明的電路板結構的設計中,環型擋牆圍繞導電通孔,其中環型擋牆為面屏(closed boundary)式的封閉結構,可以降低電磁干擾(EMI)且完全涵蓋導電通孔的訊號。相較於現有技術中在導電通孔的周圍設置具有間隙的單排盲孔而言,本發明的電路板結構可有效的阻止能量損失及減少雜訊干擾,可具有較佳的訊號完整性。To sum up, in the design of the circuit board structure of the present invention, the ring-shaped retaining wall surrounds the conductive through hole, wherein the ring-shaped retaining wall is a closed boundary structure, which can reduce electromagnetic interference (EMI) and Signals that fully cover conductive vias. Compared with the single row of blind holes with gaps around the conductive vias in the prior art, the circuit board structure of the present invention can effectively prevent energy loss and reduce noise interference, and has better signal integrity.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.
10:電子裝置 20:電子元件 22:接墊 30:連接件 100、200a、200b、200c、200d:電路板結構 110:基底 111、212:第一介電層 113、222:第二介電層 115、218:第一內部線路層 117、228:第二內部線路層 119:導電連接層 120、230:第三介電層 130、240:第四介電層 140、214:第一外部線路層 142、218a:第一訊號線路 144、218b:第一接地線路 150、224:第二外部線路層 152、228a:第二訊號線路 154、228b:第二接地線路 160:導電通孔 162:貫孔 164:導電材料層 166:填孔材料 167:上表面 169:下表面 170、250:第一環型擋牆 180、260:第二環型擋牆 210:第一基底 220:第二基底 216:第一導電通孔 226:第二導電通孔 270:第一接合部 275:第二接合部 280:第三接合部 285:第四接合部 C1:銅箔層 C2:鍍銅層 C3:罩蓋層 F1:第一填孔材料 F11:第一上表面 F12:第一下表面 F2:第二填孔材料 F21:第二上表面 F22:第二下表面 H:開口 L1:訊號路徑 L2、L3、L4、L5:接地路徑 M1:第一導電材料層 M2:第二導電材料層 P1、P2、P3:位置 S1:第一表面 S2:第二表面 S3:第三表面 S4:第四表面 T1:第一貫孔 T2:第二貫孔 10: Electronic device 20: Electronic components 22: Pad 30: connector 100, 200a, 200b, 200c, 200d: circuit board structure 110: base 111, 212: the first dielectric layer 113, 222: second dielectric layer 115, 218: the first internal circuit layer 117, 228: the second internal circuit layer 119: Conductive connection layer 120, 230: the third dielectric layer 130, 240: the fourth dielectric layer 140, 214: the first external line layer 142, 218a: the first signal line 144, 218b: the first grounding line 150, 224: second external line layer 152, 228a: the second signal line 154, 228b: the second grounding line 160: Conductive vias 162: through hole 164: conductive material layer 166: hole filling material 167: upper surface 169: lower surface 170, 250: the first ring retaining wall 180, 260: the second ring retaining wall 210: First base 220:Second Base 216: the first conductive via 226: second conductive via 270: the first junction 275: second junction 280: The third junction 285: The fourth junction C1: copper foil layer C2: copper plating layer C3: cover layer F1: The first filling material F11: first upper surface F12: first lower surface F2: The second hole filling material F21: second upper surface F22: second lower surface H: open L1: signal path L2, L3, L4, L5: Ground paths M1: first conductive material layer M2: second conductive material layer P1, P2, P3: position S1: first surface S2: second surface S3: third surface S4: fourth surface T1: the first through hole T2: Second through hole
圖1A是依照本發明的一實施例的一種電路板結構的俯視示意圖。 圖1B是沿圖1A的線I-I的剖面示意圖。 圖1C是沿圖1A的線II-II的剖面示意圖。 圖1D是沿圖1A的線III-III的剖面示意圖。 圖2A是本發明的另一實施例的一種電路板結構的剖面示意圖。 圖2B是圖2A的電路板結構的另一局部剖面示意圖。 圖2C是圖2A的電路板結構的局部立體示意圖。 圖2D是包括圖2A的電路板結構的一種電子裝置的局部剖面示意圖。 圖3A是圖2A電路板結構的第一基底、第三介電層以及第一環型擋牆俯視示意圖。 圖3B是沿圖3A的線A-A的剖面示意圖。 圖3C是沿圖3A的線B-B的剖面示意圖。 圖3D是沿圖3A的線C-C的剖面示意圖。 圖4A是繪示圖2A的電路板結構的第二基底、第四介電層以及第二環型擋牆俯視示意圖。 圖4B是沿圖4A的線A-A的剖面示意圖。 圖4C是沿圖4A的線B-B的剖面示意圖。 圖4D是沿圖4A的線C-C的剖面示意圖。 圖5A是本發明的另一實施例的一種電路板結構的剖面示意圖。 圖5B是圖5A的電路板結構的另一局部剖面示意圖。 圖6A是本發明的另一實施例的一種電路板結構的剖面示意圖。 圖6B是圖6A的電路板結構的另一局部剖面示意圖。 圖7A是本發明的另一實施例的一種電路板結構的剖面示意圖。 圖7B是圖7A的電路板結構的另一局部剖面示意圖。 FIG. 1A is a schematic top view of a circuit board structure according to an embodiment of the present invention. FIG. 1B is a schematic cross-sectional view along line I-I of FIG. 1A . FIG. 1C is a schematic cross-sectional view along line II-II of FIG. 1A . FIG. 1D is a schematic cross-sectional view along line III-III of FIG. 1A . FIG. 2A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 2B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 2A . FIG. 2C is a partial perspective view of the circuit board structure in FIG. 2A . FIG. 2D is a schematic partial cross-sectional view of an electronic device including the circuit board structure of FIG. 2A . 3A is a schematic top view of the first substrate, the third dielectric layer and the first ring-shaped retaining wall of the circuit board structure in FIG. 2A . Fig. 3B is a schematic cross-sectional view along line A-A of Fig. 3A. FIG. 3C is a schematic cross-sectional view along line B-B of FIG. 3A . FIG. 3D is a schematic cross-sectional view along line C-C of FIG. 3A . 4A is a schematic top view illustrating the second base, the fourth dielectric layer and the second ring-shaped retaining wall of the circuit board structure of FIG. 2A . FIG. 4B is a schematic cross-sectional view along line A-A of FIG. 4A. FIG. 4C is a schematic cross-sectional view along line B-B of FIG. 4A . FIG. 4D is a schematic cross-sectional view along line C-C of FIG. 4A. FIG. 5A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 5B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 5A . FIG. 6A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 6B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 6A . FIG. 7A is a schematic cross-sectional view of a circuit board structure according to another embodiment of the present invention. FIG. 7B is another partial cross-sectional schematic diagram of the circuit board structure of FIG. 7A .
110:基底 110: base
111:第一介電層 111: the first dielectric layer
113:第二介電層 113: second dielectric layer
115:第一內部線路層 115: The first internal circuit layer
117:第二內部線路層 117: The second internal circuit layer
119:導電連接層 119: Conductive connection layer
120:第三介電層 120: the third dielectric layer
130:第四介電層 130: the fourth dielectric layer
140:第一外部線路層 140: the first external line layer
142:第一訊號線路 142: The first signal line
144:第一接地線路 144: The first grounding line
150:第二外部線路層 150: second external line layer
152:第二訊號線路 152: Second signal line
154:第二接地線路 154: Second grounding line
160:導電通孔 160: Conductive vias
162:貫孔 162: through hole
164:導電材料層 164: conductive material layer
166:填孔材料 166: hole filling material
167:上表面 167: upper surface
169:下表面 169: lower surface
170:第一環型擋牆 170: The first ring retaining wall
180:第二環型擋牆 180: Second ring retaining wall
C1:銅箔層 C1: copper foil layer
C2:鍍銅層 C2: copper plating layer
C3:罩蓋層 C3: cover layer
H:開口 H: open
L1:訊號路徑 L1: signal path
L2:接地路徑 L2: Ground path
S1:第一表面 S1: first surface
S2:第二表面 S2: second surface
S3:第三表面 S3: third surface
S4:第四表面 S4: fourth surface
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US63/279,661 | 2021-11-15 |
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TW507476B (en) * | 1999-11-09 | 2002-10-21 | Gul Technologies Singapore Ltd | Printed circuit boards with in-board shielded circuitry and method of producing the same |
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US9837347B2 (en) * | 2015-08-14 | 2017-12-05 | Dyi-chung Hu | Coaxial copper pillar |
US10349520B2 (en) * | 2017-06-28 | 2019-07-09 | Catlam, Llc | Multi-layer circuit board using interposer layer and conductive paste |
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