TW202322557A - 採用用於散熱的增強型導熱腔框架的表面聲波（ｓａｗ）濾波器封裝以及相關製造方法 - Google Patents
採用用於散熱的增強型導熱腔框架的表面聲波（ｓａｗ）濾波器封裝以及相關製造方法 Download PDFInfo
- Publication number
- TW202322557A TW202322557A TW111124668A TW111124668A TW202322557A TW 202322557 A TW202322557 A TW 202322557A TW 111124668 A TW111124668 A TW 111124668A TW 111124668 A TW111124668 A TW 111124668A TW 202322557 A TW202322557 A TW 202322557A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- frame
- cavity
- saw filter
- cavity frame
- Prior art date
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 236
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 64
- 230000017525 heat dissipation Effects 0.000 title abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 423
- 239000000463 material Substances 0.000 claims abstract description 102
- 229910052751 metal Inorganic materials 0.000 claims description 131
- 239000002184 metal Substances 0.000 claims description 131
- 229910003460 diamond Inorganic materials 0.000 claims description 63
- 239000010432 diamond Substances 0.000 claims description 63
- 239000004020 conductor Substances 0.000 claims description 37
- 230000008878 coupling Effects 0.000 claims description 25
- 238000010168 coupling process Methods 0.000 claims description 25
- 238000005859 coupling reaction Methods 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 238000004891 communication Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000001413 cellular effect Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 230000000977 initiatory effect Effects 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000001465 metallisation Methods 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 238000005549 size reduction Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 7
- 238000004806 packaging method and process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000006903 response to temperature Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/058—Holders or supports for surface acoustic wave devices
- H03H9/059—Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/409,282 US11984874B2 (en) | 2021-08-23 | 2021-08-23 | Surface acoustic wave (SAW) filter packages employing an enhanced thermally conductive cavity frame for heat dissipation, and related fabrication methods |
| US17/409,282 | 2021-08-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202322557A true TW202322557A (zh) | 2023-06-01 |
Family
ID=82748204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111124668A TW202322557A (zh) | 2021-08-23 | 2022-07-01 | 採用用於散熱的增強型導熱腔框架的表面聲波（ｓａｗ）濾波器封裝以及相關製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11984874B2 (https=) |
| EP (1) | EP4393060A1 (https=) |
| JP (1) | JP2024532100A (https=) |
| KR (1) | KR20240047379A (https=) |
| CN (1) | CN117795849A (https=) |
| TW (1) | TW202322557A (https=) |
| WO (1) | WO2023028392A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12562711B2 (en) * | 2021-07-15 | 2026-02-24 | Skyworks Solutions, Inc. | Wafer level package having enhanced thermal dissipation |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004129223A (ja) | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | 圧電部品およびその製造方法 |
| DE102005026243B4 (de) | 2005-06-07 | 2018-04-05 | Snaptrack, Inc. | Elektrisches Bauelement und Herstellungsverfahren |
| JP2007158989A (ja) * | 2005-12-08 | 2007-06-21 | Matsushita Electric Ind Co Ltd | 電子部品 |
| DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
| JP6242597B2 (ja) | 2013-06-03 | 2017-12-06 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
| US11764750B2 (en) * | 2018-07-20 | 2023-09-19 | Global Communication Semiconductors, Llc | Support structure for bulk acoustic wave resonator |
| US11588465B2 (en) | 2019-11-26 | 2023-02-21 | Skyworks Solutions, Inc. | Stacked temperature compensated acoustic wave device with high thermal conductivity |
| CN111654259A (zh) * | 2020-05-13 | 2020-09-11 | 深圳市信维通信股份有限公司 | 一种体声波谐振装置、一种滤波装置及一种射频前端装置 |
| US12329035B2 (en) * | 2021-06-29 | 2025-06-10 | Global Communication Semiconductors, Llc | Bulk acoustic wave resonator with improved structures |
-
2021
- 2021-08-23 US US17/409,282 patent/US11984874B2/en active Active
-
2022
- 2022-07-01 WO PCT/US2022/073354 patent/WO2023028392A1/en not_active Ceased
- 2022-07-01 TW TW111124668A patent/TW202322557A/zh unknown
- 2022-07-01 EP EP22748693.3A patent/EP4393060A1/en active Pending
- 2022-07-01 JP JP2024508487A patent/JP2024532100A/ja active Pending
- 2022-07-01 CN CN202280054931.2A patent/CN117795849A/zh active Pending
- 2022-07-01 KR KR1020247005296A patent/KR20240047379A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4393060A1 (en) | 2024-07-03 |
| US20230054636A1 (en) | 2023-02-23 |
| JP2024532100A (ja) | 2024-09-05 |
| CN117795849A (zh) | 2024-03-29 |
| KR20240047379A (ko) | 2024-04-12 |
| WO2023028392A1 (en) | 2023-03-02 |
| US11984874B2 (en) | 2024-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW202322557A (zh) | 採用用於散熱的增強型導熱腔框架的表面聲波（ｓａｗ）濾波器封裝以及相關製造方法 | |
| US11437335B2 (en) | Integrated circuit (IC) packages employing a thermal conductive package substrate with die region split, and related fabrication methods | |
| TW202243398A (zh) | 具有封閉波傳播腔的鑽石橋的表面聲波（ｓａｗ）設備 | |
| US20240203938A1 (en) | Integrated bare die package, and related fabrication methods | |
| US12334909B2 (en) | Multi-level stacked acoustic wave (AW) filter packages and related fabrication methods | |
| US20240421790A1 (en) | DEVICES INCLUDING THROUGH-SUBSTRATE VIAS (TSVs) FOR BACKSIDE INTERCONNECTION, AND RELATED FABRICATION METHODS | |
| US20250047262A1 (en) | Acoustic devices with integrated circuit elements and related fabrication methods | |
| TWI903023B (zh) | 積體電路（ｉｃ）封裝中適應於電子裝置高度的熱結構 | |
| TW202312416A (zh) | 在封裝基板中的（諸）金屬結構中具有空隙定義區段以減小晶粒－基板機械應力的半導體晶粒模組封裝以及相關方法 | |
| US20250079337A1 (en) | Integrated circuits with two-side metallization and external stiffening layer and related fabrication methods | |
| TW202527284A (zh) | 具有減少或防止材料滲入氣腔中的防護結構的晶粒封裝及相關製造方法 | |
| KR20240142413A (ko) | 크로스-토크 감소 층들을 포함하는 적층형 음향파(aw) 필터 패키지 및 관련 제조 방법 | |
| TW202226516A (zh) | 在未使用的扇出區域中採用電磁干擾（ｅｍｉ）遮罩結構用於ｅｍｉ遮罩的扇出晶圓級封裝（ｆｏｗｌｐ）積體電路（ｉｃ）和相關製造方法 | |
| TW202541424A (zh) | 聲諧振器散熱系統及方法 | |
| KR20260020098A (ko) | 다이의 열 에너지를 소산시키기 위해 다이를 인터포저 기판에 열적으로 결합하는 금속 인터커넥트들을 갖는 금속 블록을 사용하는 집적 회로(ic) 패키지 및 관련 제조 방법들 | |
| CN121080141A (zh) | 三维（3d）双互补电路结构和相关制造方法 | |
| CN121058086A (zh) | 具有各自具有多个接触区域的凸块互连件的集成电路（ic）芯片、相关ic封装和制造方法 |