JP2024532100A - 放熱のための強化熱伝導性キャビティフレームを採用する表面弾性波(saw)フィルタパッケージ、及び関連する製造方法 - Google Patents

放熱のための強化熱伝導性キャビティフレームを採用する表面弾性波(saw)フィルタパッケージ、及び関連する製造方法 Download PDF

Info

Publication number
JP2024532100A
JP2024532100A JP2024508487A JP2024508487A JP2024532100A JP 2024532100 A JP2024532100 A JP 2024532100A JP 2024508487 A JP2024508487 A JP 2024508487A JP 2024508487 A JP2024508487 A JP 2024508487A JP 2024532100 A JP2024532100 A JP 2024532100A
Authority
JP
Japan
Prior art keywords
substrate
frame
cap substrate
cavity
cavity frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024508487A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024532100A5 (https=
Inventor
ドゥッタ、ラナディープ
キム、ジョンヘ
ラン、ジェ-ション
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2024532100A publication Critical patent/JP2024532100A/ja
Publication of JP2024532100A5 publication Critical patent/JP2024532100A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6406Filters characterised by a particular frequency characteristic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02834Means for compensation or elimination of undesirable effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/058Holders or supports for surface acoustic wave devices
    • H03H9/059Holders or supports for surface acoustic wave devices consisting of mounting pads or bumps
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2024508487A 2021-08-23 2022-07-01 放熱のための強化熱伝導性キャビティフレームを採用する表面弾性波(saw)フィルタパッケージ、及び関連する製造方法 Pending JP2024532100A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/409,282 US11984874B2 (en) 2021-08-23 2021-08-23 Surface acoustic wave (SAW) filter packages employing an enhanced thermally conductive cavity frame for heat dissipation, and related fabrication methods
US17/409,282 2021-08-23
PCT/US2022/073354 WO2023028392A1 (en) 2021-08-23 2022-07-01 Surface acoustic wave (saw) filter packages employing an enhanced thermally conductive cavity frame for heat dissipation, and related fabrication methods

Publications (2)

Publication Number Publication Date
JP2024532100A true JP2024532100A (ja) 2024-09-05
JP2024532100A5 JP2024532100A5 (https=) 2025-06-11

Family

ID=82748204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024508487A Pending JP2024532100A (ja) 2021-08-23 2022-07-01 放熱のための強化熱伝導性キャビティフレームを採用する表面弾性波(saw)フィルタパッケージ、及び関連する製造方法

Country Status (7)

Country Link
US (1) US11984874B2 (https=)
EP (1) EP4393060A1 (https=)
JP (1) JP2024532100A (https=)
KR (1) KR20240047379A (https=)
CN (1) CN117795849A (https=)
TW (1) TW202322557A (https=)
WO (1) WO2023028392A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12562711B2 (en) * 2021-07-15 2026-02-24 Skyworks Solutions, Inc. Wafer level package having enhanced thermal dissipation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158989A (ja) * 2005-12-08 2007-06-21 Matsushita Electric Ind Co Ltd 電子部品
JP2011506106A (ja) * 2007-12-07 2011-03-03 エプコス アクチエンゲゼルシャフト Memsパッケージおよび該memsパッケージの製造方法
US20210159877A1 (en) * 2019-11-26 2021-05-27 Skyworks Solutions, Inc. Stacked temperature compensated acoustic wave device with high thermal conductivity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004129223A (ja) 2002-07-31 2004-04-22 Murata Mfg Co Ltd 圧電部品およびその製造方法
DE102005026243B4 (de) 2005-06-07 2018-04-05 Snaptrack, Inc. Elektrisches Bauelement und Herstellungsverfahren
JP6242597B2 (ja) 2013-06-03 2017-12-06 太陽誘電株式会社 弾性波デバイス及びその製造方法
US11764750B2 (en) * 2018-07-20 2023-09-19 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
CN111654259A (zh) * 2020-05-13 2020-09-11 深圳市信维通信股份有限公司 一种体声波谐振装置、一种滤波装置及一种射频前端装置
US12329035B2 (en) * 2021-06-29 2025-06-10 Global Communication Semiconductors, Llc Bulk acoustic wave resonator with improved structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007158989A (ja) * 2005-12-08 2007-06-21 Matsushita Electric Ind Co Ltd 電子部品
JP2011506106A (ja) * 2007-12-07 2011-03-03 エプコス アクチエンゲゼルシャフト Memsパッケージおよび該memsパッケージの製造方法
US20210159877A1 (en) * 2019-11-26 2021-05-27 Skyworks Solutions, Inc. Stacked temperature compensated acoustic wave device with high thermal conductivity

Also Published As

Publication number Publication date
TW202322557A (zh) 2023-06-01
EP4393060A1 (en) 2024-07-03
US20230054636A1 (en) 2023-02-23
CN117795849A (zh) 2024-03-29
KR20240047379A (ko) 2024-04-12
WO2023028392A1 (en) 2023-03-02
US11984874B2 (en) 2024-05-14

Similar Documents

Publication Publication Date Title
US11456291B2 (en) Integrated circuit (IC) packages employing split, double-sided metallization structures to facilitate a semiconductor die (“die”) module employing stacked dice, and related fabrication methods
JP2024532100A (ja) 放熱のための強化熱伝導性キャビティフレームを採用する表面弾性波(saw)フィルタパッケージ、及び関連する製造方法
EP4100997B1 (en) Integrated circuit (ic) packages employing a thermal conductive package substrate with die region split, and related fabrication methods
US20220231660A1 (en) Surface acoustic wave (saw) devices with a diamond bridge enclosed wave propagation cavity
US20240203938A1 (en) Integrated bare die package, and related fabrication methods
US12334909B2 (en) Multi-level stacked acoustic wave (AW) filter packages and related fabrication methods
US20240421790A1 (en) DEVICES INCLUDING THROUGH-SUBSTRATE VIAS (TSVs) FOR BACKSIDE INTERCONNECTION, AND RELATED FABRICATION METHODS
US20250096164A1 (en) Die package with guard structure to reduce or prevent material seepage into air cavity, and related fabrication methods
US20250047262A1 (en) Acoustic devices with integrated circuit elements and related fabrication methods
TWI903023B (zh) 積體電路(ic)封裝中適應於電子裝置高度的熱結構
US20250273596A1 (en) Integrated circuit (ic) packages employing stiffener structure with integrated cavity(ies) to enclose an electrical component(s), and related fabrication methods
JP2024533137A (ja) ダイ-基板間の機械的応力を低減するためにパッケージ基板の金属構造(単数又は複数)内にボイド画定部分を有する、半導体ダイモジュールパッケージ、及び関連する方法
KR20240142413A (ko) 크로스-토크 감소 층들을 포함하는 적층형 음향파(aw) 필터 패키지 및 관련 제조 방법
KR20260020098A (ko) 다이의 열 에너지를 소산시키기 위해 다이를 인터포저 기판에 열적으로 결합하는 금속 인터커넥트들을 갖는 금속 블록을 사용하는 집적 회로(ic) 패키지 및 관련 제조 방법들
JP2024532085A (ja) 上側積層ダイをパッケージ基板に結合するためのインターポーザをパッケージ高さ低減のために用いる積層ダイ集積回路(ic)パッケージ、および関連する製作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250602

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250602

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20260311

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260331