TW202322373A - 光檢測裝置、光檢測裝置之製造方法及電子機器 - Google Patents

光檢測裝置、光檢測裝置之製造方法及電子機器 Download PDF

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TW202322373A
TW202322373A TW111131268A TW111131268A TW202322373A TW 202322373 A TW202322373 A TW 202322373A TW 111131268 A TW111131268 A TW 111131268A TW 111131268 A TW111131268 A TW 111131268A TW 202322373 A TW202322373 A TW 202322373A
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Taiwan
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photodetection device
mentioned
separation part
separation
layer
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TW111131268A
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English (en)
Chinese (zh)
Inventor
古荘貴章
江田健太郎
田崎雅幸
上原睦雄
齋藤卓
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日商索尼半導體解決方案公司
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Publication of TW202322373A publication Critical patent/TW202322373A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

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TW111131268A 2021-09-16 2022-08-19 光檢測裝置、光檢測裝置之製造方法及電子機器 TW202322373A (zh)

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JP2021-151390 2021-09-16
JP2021151390 2021-09-16

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TW202322373A true TW202322373A (zh) 2023-06-01

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US (1) US20240379709A1 (https=)
EP (1) EP4404250A1 (https=)
JP (1) JPWO2023042462A1 (https=)
KR (1) KR20240058850A (https=)
CN (1) CN117716504A (https=)
DE (1) DE112022004422T5 (https=)
TW (1) TW202322373A (https=)
WO (1) WO2023042462A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI877930B (zh) * 2023-10-04 2025-03-21 台灣積體電路製造股份有限公司 影像感測裝置以及製造積體電路裝置的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024202548A1 (ja) * 2023-03-29 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
CN121400092A (zh) * 2023-07-28 2026-01-23 索尼半导体解决方案公司 光检测装置和电子设备
US20250072148A1 (en) * 2023-08-23 2025-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure for image sensor
WO2025225733A1 (ja) * 2024-04-26 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054741A (ja) * 2009-09-01 2011-03-17 Toshiba Corp 裏面照射型固体撮像装置
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102268714B1 (ko) * 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102551489B1 (ko) * 2017-10-13 2023-07-04 삼성전자주식회사 이미지 센서
EP3709357A4 (en) 2017-11-09 2020-12-23 Sony Semiconductor Solutions Corporation IMAGE CAPTURE ELEMENT AND ELECTRONIC DEVICE
JP7250427B2 (ja) * 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI877930B (zh) * 2023-10-04 2025-03-21 台灣積體電路製造股份有限公司 影像感測裝置以及製造積體電路裝置的方法

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Publication number Publication date
WO2023042462A1 (ja) 2023-03-23
CN117716504A (zh) 2024-03-15
JPWO2023042462A1 (https=) 2023-03-23
DE112022004422T5 (de) 2024-07-11
US20240379709A1 (en) 2024-11-14
EP4404250A1 (en) 2024-07-24
KR20240058850A (ko) 2024-05-03

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