JPWO2023042462A1 - - Google Patents
Info
- Publication number
- JPWO2023042462A1 JPWO2023042462A1 JP2023548116A JP2023548116A JPWO2023042462A1 JP WO2023042462 A1 JPWO2023042462 A1 JP WO2023042462A1 JP 2023548116 A JP2023548116 A JP 2023548116A JP 2023548116 A JP2023548116 A JP 2023548116A JP WO2023042462 A1 JPWO2023042462 A1 JP WO2023042462A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/807—Pixel isolation structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021151390 | 2021-09-16 | ||
| PCT/JP2022/014483 WO2023042462A1 (ja) | 2021-09-16 | 2022-03-25 | 光検出装置、光検出装置の製造方法、及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023042462A1 true JPWO2023042462A1 (https=) | 2023-03-23 |
Family
ID=85601956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023548116A Abandoned JPWO2023042462A1 (https=) | 2021-09-16 | 2022-03-25 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20240379709A1 (https=) |
| EP (1) | EP4404250A1 (https=) |
| JP (1) | JPWO2023042462A1 (https=) |
| KR (1) | KR20240058850A (https=) |
| CN (1) | CN117716504A (https=) |
| DE (1) | DE112022004422T5 (https=) |
| TW (1) | TW202322373A (https=) |
| WO (1) | WO2023042462A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024202548A1 (ja) * | 2023-03-29 | 2024-10-03 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
| CN121400092A (zh) * | 2023-07-28 | 2026-01-23 | 索尼半导体解决方案公司 | 光检测装置和电子设备 |
| US20250072148A1 (en) * | 2023-08-23 | 2025-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolation structure for image sensor |
| US20250120209A1 (en) * | 2023-10-04 | 2025-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device and method of manufacturing the same |
| WO2025225733A1 (ja) * | 2024-04-26 | 2025-10-30 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置及び電子機器 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011054741A (ja) * | 2009-09-01 | 2011-03-17 | Toshiba Corp | 裏面照射型固体撮像装置 |
| JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
| KR102209097B1 (ko) * | 2014-02-27 | 2021-01-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| KR102268714B1 (ko) * | 2014-06-23 | 2021-06-28 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| KR102551489B1 (ko) * | 2017-10-13 | 2023-07-04 | 삼성전자주식회사 | 이미지 센서 |
| EP3709357A4 (en) | 2017-11-09 | 2020-12-23 | Sony Semiconductor Solutions Corporation | IMAGE CAPTURE ELEMENT AND ELECTRONIC DEVICE |
| JP7250427B2 (ja) * | 2018-02-09 | 2023-04-03 | キヤノン株式会社 | 光電変換装置、撮像システム、および移動体 |
-
2022
- 2022-03-25 DE DE112022004422.5T patent/DE112022004422T5/de active Pending
- 2022-03-25 EP EP22869614.2A patent/EP4404250A1/en not_active Withdrawn
- 2022-03-25 WO PCT/JP2022/014483 patent/WO2023042462A1/ja not_active Ceased
- 2022-03-25 KR KR1020247006556A patent/KR20240058850A/ko not_active Withdrawn
- 2022-03-25 CN CN202280052277.1A patent/CN117716504A/zh active Pending
- 2022-03-25 US US18/690,173 patent/US20240379709A1/en active Pending
- 2022-03-25 JP JP2023548116A patent/JPWO2023042462A1/ja not_active Abandoned
- 2022-08-19 TW TW111131268A patent/TW202322373A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023042462A1 (ja) | 2023-03-23 |
| CN117716504A (zh) | 2024-03-15 |
| DE112022004422T5 (de) | 2024-07-11 |
| US20240379709A1 (en) | 2024-11-14 |
| EP4404250A1 (en) | 2024-07-24 |
| TW202322373A (zh) | 2023-06-01 |
| KR20240058850A (ko) | 2024-05-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250213 |
|
| A762 | Written abandonment of application |
Free format text: JAPANESE INTERMEDIATE CODE: A762 Effective date: 20250414 |