CN117716504A - 光检测装置、光检测装置的制造方法和电子设备 - Google Patents

光检测装置、光检测装置的制造方法和电子设备 Download PDF

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Publication number
CN117716504A
CN117716504A CN202280052277.1A CN202280052277A CN117716504A CN 117716504 A CN117716504 A CN 117716504A CN 202280052277 A CN202280052277 A CN 202280052277A CN 117716504 A CN117716504 A CN 117716504A
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CN
China
Prior art keywords
detection device
light detection
separation portion
light
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280052277.1A
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English (en)
Chinese (zh)
Inventor
古荘贵章
江田健太郎
田崎雅幸
上原睦雄
斋藤卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN117716504A publication Critical patent/CN117716504A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202280052277.1A 2021-09-16 2022-03-25 光检测装置、光检测装置的制造方法和电子设备 Pending CN117716504A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-151390 2021-09-16
JP2021151390 2021-09-16
PCT/JP2022/014483 WO2023042462A1 (ja) 2021-09-16 2022-03-25 光検出装置、光検出装置の製造方法、及び電子機器

Publications (1)

Publication Number Publication Date
CN117716504A true CN117716504A (zh) 2024-03-15

Family

ID=85601956

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280052277.1A Pending CN117716504A (zh) 2021-09-16 2022-03-25 光检测装置、光检测装置的制造方法和电子设备

Country Status (8)

Country Link
US (1) US20240379709A1 (https=)
EP (1) EP4404250A1 (https=)
JP (1) JPWO2023042462A1 (https=)
KR (1) KR20240058850A (https=)
CN (1) CN117716504A (https=)
DE (1) DE112022004422T5 (https=)
TW (1) TW202322373A (https=)
WO (1) WO2023042462A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024202548A1 (ja) * 2023-03-29 2024-10-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
CN121400092A (zh) * 2023-07-28 2026-01-23 索尼半导体解决方案公司 光检测装置和电子设备
US20250072148A1 (en) * 2023-08-23 2025-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation structure for image sensor
US20250120209A1 (en) * 2023-10-04 2025-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method of manufacturing the same
WO2025225733A1 (ja) * 2024-04-26 2025-10-30 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054741A (ja) * 2009-09-01 2011-03-17 Toshiba Corp 裏面照射型固体撮像装置
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
KR102209097B1 (ko) * 2014-02-27 2021-01-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102268714B1 (ko) * 2014-06-23 2021-06-28 삼성전자주식회사 이미지 센서 및 이의 제조 방법
KR102551489B1 (ko) * 2017-10-13 2023-07-04 삼성전자주식회사 이미지 센서
EP3709357A4 (en) 2017-11-09 2020-12-23 Sony Semiconductor Solutions Corporation IMAGE CAPTURE ELEMENT AND ELECTRONIC DEVICE
JP7250427B2 (ja) * 2018-02-09 2023-04-03 キヤノン株式会社 光電変換装置、撮像システム、および移動体

Also Published As

Publication number Publication date
WO2023042462A1 (ja) 2023-03-23
JPWO2023042462A1 (https=) 2023-03-23
DE112022004422T5 (de) 2024-07-11
US20240379709A1 (en) 2024-11-14
EP4404250A1 (en) 2024-07-24
TW202322373A (zh) 2023-06-01
KR20240058850A (ko) 2024-05-03

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