TW202320149A - 使用三氯化硼的原子層蝕刻 - Google Patents

使用三氯化硼的原子層蝕刻 Download PDF

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Publication number
TW202320149A
TW202320149A TW111133678A TW111133678A TW202320149A TW 202320149 A TW202320149 A TW 202320149A TW 111133678 A TW111133678 A TW 111133678A TW 111133678 A TW111133678 A TW 111133678A TW 202320149 A TW202320149 A TW 202320149A
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TW
Taiwan
Prior art keywords
wafer
substrate
modified
layer
oxygen
Prior art date
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TW111133678A
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English (en)
Chinese (zh)
Inventor
安德里斯 費雪
亞倫 琳恩 盧特詹
托爾斯滕 貝恩德 立爾
Original Assignee
美商蘭姆研究公司
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Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202320149A publication Critical patent/TW202320149A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
TW111133678A 2021-09-07 2022-09-06 使用三氯化硼的原子層蝕刻 TW202320149A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202163260945P 2021-09-07 2021-09-07
US63/260,945 2021-09-07

Publications (1)

Publication Number Publication Date
TW202320149A true TW202320149A (zh) 2023-05-16

Family

ID=85506858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111133678A TW202320149A (zh) 2021-09-07 2022-09-06 使用三氯化硼的原子層蝕刻

Country Status (5)

Country Link
US (1) US20250125155A1 (https=)
JP (1) JP2024533108A (https=)
KR (1) KR20240063140A (https=)
TW (1) TW202320149A (https=)
WO (1) WO2023039382A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12615980B2 (en) 2021-03-18 2026-04-28 Lam Research Corporation Etching of indium gallium zinc oxide
KR102724517B1 (ko) * 2022-12-15 2024-10-30 성균관대학교산학협력단 이차원 반도체 물질의 등방성 식각 방법
WO2025021779A1 (en) * 2023-07-25 2025-01-30 Merck Patent Gmbh Vapor-phase thermal etch of metal oxides
KR102738565B1 (ko) * 2023-10-30 2024-12-06 (주)아이작리서치 인듐주석산화물의 원자층 식각 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9806252B2 (en) * 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
TWI658512B (zh) * 2016-02-23 2019-05-01 Tokyo Electron Limited 原子層蝕刻用方法與系統
US9837312B1 (en) * 2016-07-22 2017-12-05 Lam Research Corporation Atomic layer etching for enhanced bottom-up feature fill
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
KR101853588B1 (ko) * 2017-08-01 2018-04-30 성균관대학교산학협력단 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법

Also Published As

Publication number Publication date
JP2024533108A (ja) 2024-09-12
US20250125155A1 (en) 2025-04-17
KR20240063140A (ko) 2024-05-10
WO2023039382A1 (en) 2023-03-16

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