JP2024533108A - 三塩化ホウ素を使用した原子層エッチング - Google Patents

三塩化ホウ素を使用した原子層エッチング Download PDF

Info

Publication number
JP2024533108A
JP2024533108A JP2024513687A JP2024513687A JP2024533108A JP 2024533108 A JP2024533108 A JP 2024533108A JP 2024513687 A JP2024513687 A JP 2024513687A JP 2024513687 A JP2024513687 A JP 2024513687A JP 2024533108 A JP2024533108 A JP 2024533108A
Authority
JP
Japan
Prior art keywords
wafer
substrate
modified
layer
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024513687A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024533108A5 (https=
Inventor
フィッシャー・アンドレアス
ロートザーン・アーロン・リン
リル・ソーステン・ベルンド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2024533108A publication Critical patent/JP2024533108A/ja
Publication of JP2024533108A5 publication Critical patent/JP2024533108A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber

Landscapes

  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
JP2024513687A 2021-09-07 2022-09-06 三塩化ホウ素を使用した原子層エッチング Pending JP2024533108A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163260945P 2021-09-07 2021-09-07
US63/260,945 2021-09-07
PCT/US2022/075996 WO2023039382A1 (en) 2021-09-07 2022-09-06 Atomic layer etching using boron trichloride

Publications (2)

Publication Number Publication Date
JP2024533108A true JP2024533108A (ja) 2024-09-12
JP2024533108A5 JP2024533108A5 (https=) 2025-09-12

Family

ID=85506858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024513687A Pending JP2024533108A (ja) 2021-09-07 2022-09-06 三塩化ホウ素を使用した原子層エッチング

Country Status (5)

Country Link
US (1) US20250125155A1 (https=)
JP (1) JP2024533108A (https=)
KR (1) KR20240063140A (https=)
TW (1) TW202320149A (https=)
WO (1) WO2023039382A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12615980B2 (en) 2021-03-18 2026-04-28 Lam Research Corporation Etching of indium gallium zinc oxide
KR102724517B1 (ko) * 2022-12-15 2024-10-30 성균관대학교산학협력단 이차원 반도체 물질의 등방성 식각 방법
WO2025021779A1 (en) * 2023-07-25 2025-01-30 Merck Patent Gmbh Vapor-phase thermal etch of metal oxides
KR102738565B1 (ko) * 2023-10-30 2024-12-06 (주)아이작리서치 인듐주석산화물의 원자층 식각 방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9806252B2 (en) * 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
TWI658512B (zh) * 2016-02-23 2019-05-01 Tokyo Electron Limited 原子層蝕刻用方法與系統
US9837312B1 (en) * 2016-07-22 2017-12-05 Lam Research Corporation Atomic layer etching for enhanced bottom-up feature fill
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
KR101853588B1 (ko) * 2017-08-01 2018-04-30 성균관대학교산학협력단 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법

Also Published As

Publication number Publication date
US20250125155A1 (en) 2025-04-17
KR20240063140A (ko) 2024-05-10
TW202320149A (zh) 2023-05-16
WO2023039382A1 (en) 2023-03-16

Similar Documents

Publication Publication Date Title
US11380556B2 (en) Thermal atomic layer etch with rapid temperature cycling
US20250125155A1 (en) Atomic layer etching using boron trichloride
US12615980B2 (en) Etching of indium gallium zinc oxide
TWI742034B (zh) 用以圖案化非揮發性金屬的腔室
JP7739434B2 (ja) 原子層エッチングにおけるエッチング選択性の制御
TW202541156A (zh) 鉬的原子層蝕刻
US20180197770A1 (en) Deposition of aluminum oxide etch stop layers
KR20240171177A (ko) 고 종횡비 구조체들의 효율적인 세정 및 에칭
TW202219644A (zh) 用於在euv圖案化中減少缺陷的多層硬遮罩
US20240381790A1 (en) Techniques and apparatuses for processing chalcogenides
KR102935543B1 (ko) 기판 프로세싱을 위한 산화 프로파일의 변조
KR20250005241A (ko) 액체 전구체를 사용하는 선택적 산화물 에칭
US20190051540A1 (en) Systems and methods for plasma-less de-halogenation
US20260060018A1 (en) Nitride thermal atomic layer etch
KR20220143122A (ko) 코어 제거

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250904

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250904