JP2024533108A5 - - Google Patents
Info
- Publication number
- JP2024533108A5 JP2024533108A5 JP2024513687A JP2024513687A JP2024533108A5 JP 2024533108 A5 JP2024533108 A5 JP 2024533108A5 JP 2024513687 A JP2024513687 A JP 2024513687A JP 2024513687 A JP2024513687 A JP 2024513687A JP 2024533108 A5 JP2024533108 A5 JP 2024533108A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- modified
- layer
- oxygen
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163260945P | 2021-09-07 | 2021-09-07 | |
| US63/260,945 | 2021-09-07 | ||
| PCT/US2022/075996 WO2023039382A1 (en) | 2021-09-07 | 2022-09-06 | Atomic layer etching using boron trichloride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024533108A JP2024533108A (ja) | 2024-09-12 |
| JP2024533108A5 true JP2024533108A5 (https=) | 2025-09-12 |
Family
ID=85506858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024513687A Pending JP2024533108A (ja) | 2021-09-07 | 2022-09-06 | 三塩化ホウ素を使用した原子層エッチング |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250125155A1 (https=) |
| JP (1) | JP2024533108A (https=) |
| KR (1) | KR20240063140A (https=) |
| TW (1) | TW202320149A (https=) |
| WO (1) | WO2023039382A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12615980B2 (en) | 2021-03-18 | 2026-04-28 | Lam Research Corporation | Etching of indium gallium zinc oxide |
| KR102724517B1 (ko) * | 2022-12-15 | 2024-10-30 | 성균관대학교산학협력단 | 이차원 반도체 물질의 등방성 식각 방법 |
| WO2025021779A1 (en) * | 2023-07-25 | 2025-01-30 | Merck Patent Gmbh | Vapor-phase thermal etch of metal oxides |
| KR102738565B1 (ko) * | 2023-10-30 | 2024-12-06 | (주)아이작리서치 | 인듐주석산화물의 원자층 식각 방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| TWI658512B (zh) * | 2016-02-23 | 2019-05-01 | Tokyo Electron Limited | 原子層蝕刻用方法與系統 |
| US9837312B1 (en) * | 2016-07-22 | 2017-12-05 | Lam Research Corporation | Atomic layer etching for enhanced bottom-up feature fill |
| US10283369B2 (en) * | 2016-08-10 | 2019-05-07 | Tokyo Electron Limited | Atomic layer etching using a boron-containing gas and hydrogen fluoride gas |
| KR101853588B1 (ko) * | 2017-08-01 | 2018-04-30 | 성균관대학교산학협력단 | 반도체 소자, 광전 소자, 및 전이금속 디칼코게나이드 박막의 제조 방법 |
-
2022
- 2022-09-06 US US18/688,739 patent/US20250125155A1/en active Pending
- 2022-09-06 WO PCT/US2022/075996 patent/WO2023039382A1/en not_active Ceased
- 2022-09-06 KR KR1020247011584A patent/KR20240063140A/ko active Pending
- 2022-09-06 JP JP2024513687A patent/JP2024533108A/ja active Pending
- 2022-09-06 TW TW111133678A patent/TW202320149A/zh unknown
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2024533108A5 (https=) | ||
| US6461801B1 (en) | Rapid heating and cooling of workpiece chucks | |
| US7655571B2 (en) | Integrated method and apparatus for efficient removal of halogen residues from etched substrates | |
| KR101275336B1 (ko) | 페데스탈 커버 | |
| US5863170A (en) | Modular process system | |
| US8562742B2 (en) | Apparatus for radial delivery of gas to a chamber and methods of use thereof | |
| US5855465A (en) | Semiconductor wafer processing carousel | |
| TWI407521B (zh) | 用以從蝕刻基板有效地移除鹵素殘餘物之設備 | |
| EP1970940A2 (en) | Substrate processing apparatus, substrate processing method and storage medium | |
| JP7106681B2 (ja) | デュアルロードロックチャンバ | |
| EP1623452B1 (en) | Wide temperature range chuck system | |
| US12615980B2 (en) | Etching of indium gallium zinc oxide | |
| KR20200010180A (ko) | 인-시튜 반도체 프로세싱 챔버 온도 장치 | |
| US20080223400A1 (en) | Substrate processing apparatus, substrate processing method and storage medium | |
| US20140069459A1 (en) | Methods and apparatus for cleaning deposition chambers | |
| TW201700781A (zh) | 具有用於改變基板溫度之基板托盤的預清洗腔室及使用該基板托盤進行預清洗製程 | |
| US10535513B2 (en) | Apparatus and methods for backside passivation | |
| KR20220157468A (ko) | 뱃치 열 프로세스 챔버 | |
| KR100778958B1 (ko) | 적층 어닐링 시스템 | |
| KR20240055813A (ko) | 칼코겐화물들 (chalcogenides) 을 프로세싱하기 위한 기법들 및 장치들 | |
| KR20250005241A (ko) | 액체 전구체를 사용하는 선택적 산화물 에칭 | |
| US20240203773A1 (en) | Substrate treating apparatus and semiconductor manufacturing equipment including the same | |
| US20250085056A1 (en) | Process chamber substrate transfer | |
| WO2026006421A1 (en) | Low temperature doped polysi backside deposition film for enhanced chucking/dechucking in semiconductor processing | |
| KR20250059472A (ko) | 나이트라이드 열적 원자 층 에칭 |