TW202318484A - Production method for frame with film and production method for protective cap - Google Patents
Production method for frame with film and production method for protective cap Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
Description
本發明有關附膜框部之製造方法及保護蓋之製造方法。The present invention relates to a method of manufacturing a film-attached frame and a method of manufacturing a protective cover.
具備LED等的電子零件的電子裝置,由於長壽命、節能等的理由,使得被利用於照明、通訊等的各種的領域。Electronic devices including electronic components such as LEDs are used in various fields such as lighting and communication for reasons such as long life and energy saving.
在此種的電子裝置,為了保護電子零件,有時對於搭載了電子零件的基材,以電子零件被收容於內部的方式予以覆蓋保護蓋。In such an electronic device, in order to protect the electronic components, a base material on which the electronic components are mounted is sometimes covered with a protective cover so that the electronic components are housed inside.
如揭露於例如專利文獻1,保護蓋具備將電子零件的周圍包圍的框部(同文獻中為第2構件)及將框部的一端開口覆蓋的蓋部(同文獻中為蓋構件)。 [先前技術文獻] [專利文獻] As disclosed in, for example, Patent Document 1, the protective cover includes a frame (second member in the same document) surrounding the electronic component and a cover (cover member in the same document) covering one end opening of the frame. [Prior Art Literature] [Patent Document]
[專利文獻1]國際公開第2015/190242號[Patent Document 1] International Publication No. 2015/190242
[發明所欲解決之問題][Problem to be solved by the invention]
於此種的電子裝置的製程,包含將搭載了電子零件的基材與保護蓋進行接合之程序。此外,於此種的保護蓋的製程,包含將框部與蓋部進行接合之程序。The manufacturing process of such an electronic device includes a process of bonding a substrate on which electronic components are mounted and a protective cover. In addition, the manufacturing process of this kind of protective cover includes the procedure of joining the frame part and the cover part.
在電子裝置的製程,為了提高基材與保護蓋的接合性等的目的,有時在保護蓋的框部的一端面(與被接合蓋部的端面相反側的端面)形成膜。In the manufacturing process of electronic devices, a film may be formed on one end surface of the frame portion of the protective cover (the end surface opposite to the end surface of the bonded cover portion) for the purpose of improving bonding between the base material and the protective cover.
此膜在保護蓋的製程中,一般而言在將框部與蓋部進行接合前,形成於框部的一端面。亦即,此情況下,在保護蓋的製程,在一端面形成有膜的附膜框部與蓋部被接合。然而,於附膜框部,有時因膜的內部應力而發生翹曲,附膜框部成為畸變的形狀。如此般於附膜框部發生翹曲時,容易發生附膜框部與蓋部的接合不良。其結果,存在發生蓋部從框部剝離之事態之虞。並且,如此的框部與蓋部的剝離在電子裝置的狀態下發生時,電子零件的收容空間的氣密性降低,會產生電子零件劣化如此之問題。This film is generally formed on one end surface of the frame portion before bonding the frame portion and the cover portion in the process of manufacturing the protective cover. That is, in this case, in the manufacturing process of the protective cover, the film-attached frame part and the cover part with the film formed on one end surface are bonded. However, the film-attached frame may be warped due to internal stress of the film, and the film-attached frame may have a distorted shape. When the film-attached frame portion is warped in this way, bonding failure between the film-attached frame portion and the cover portion is likely to occur. As a result, there is a possibility that a situation in which the lid portion is peeled off from the frame portion occurs. In addition, when such separation between the frame portion and the cover portion occurs in the state of the electronic device, the airtightness of the housing space of the electronic component is lowered, causing a problem of deterioration of the electronic component.
本發明以確實地抑制在一端面形成有膜的附膜框部的翹曲為課題。 [解決問題之技術手段] The object of the present invention is to reliably suppress warping of a film-attached frame portion in which a film is formed on one end surface. [Technical means to solve the problem]
(1)為了解決上述的課題而創出的本發明,為一種附膜框部之製造方法,前述附膜框部具備具有貫通部的玻璃製的框部及形成於框部的一端面之膜,前述附膜框部之製造方法包含:準備框部之準備程序;以及在腔室內對靶進行濺鍍從而在框部的一端面形成膜的成膜程序;在成膜程序,成膜時的腔室內的壓力,為0.1~1.0Pa。(1) The present invention, made in order to solve the above-mentioned problems, is a method of manufacturing a film-attached frame portion, the film-attached frame portion comprising a glass-made frame portion having a through portion and a film formed on one end surface of the frame portion, The aforementioned manufacturing method of the film-attached frame part includes: a preparation procedure for preparing the frame part; and a film-forming procedure in which a target is sputtered in the chamber to form a film on one end surface of the frame part; The pressure in the room is 0.1~1.0Pa.
如此般規定成膜時的腔室內的壓力的下限,使得從靶進行了濺鍍的粒子衝撞於框部的一端面的能量被抑制。為此,形成於框部的一端面的膜的內部應力被抑制,可確實地抑制附膜框部發生翹曲之事態。再者,如此般規定成膜時的腔室內的壓力之上限,使得可減低腔室內的雜質混入成膜使得膜的特性不良化的情形。The lower limit of the pressure in the chamber during film formation is defined in this way so that the energy of the particles sputtered from the target colliding with the one end surface of the frame is suppressed. Therefore, the internal stress of the film formed on the one end surface of the frame portion is suppressed, and the warp of the film-attached frame portion can be reliably suppressed. Furthermore, setting the upper limit of the pressure in the chamber during film formation in this way can reduce the possibility that impurities in the chamber are mixed into the film formation to deteriorate the characteristics of the film.
(2)如上述(1)的構成,其中,優選上,在成膜程序,靶與框部之間的距離,為50~200mm。(2) The configuration according to the above (1), wherein, preferably, the distance between the target and the frame is 50 to 200 mm in the film forming process.
如此般增長靶與框部之間的距離,使得從靶進行了濺鍍的粒子衝撞於框部的一端面的能量被抑制。為此,形成於框部的一端面的膜的內部應力被抑制,可更確實地抑制附膜框部發生翹曲之事態。By increasing the distance between the target and the frame in this way, the energy of the particles sputtered from the target colliding with the one end surface of the frame is suppressed. Therefore, the internal stress of the film formed on the one end surface of the frame portion is suppressed, and the warping of the film-attached frame portion can be more reliably suppressed.
(3)如上述(1)或(2)的構成,其中,優選上,在成膜程序,在成膜時對腔室內導入氧氣而予以與從靶進行了濺鍍的粒子發生反應,將透過該反應從而獲得的氧化物形成於框部。(3) The configuration as described in (1) or (2) above, wherein, preferably, in the film forming process, oxygen gas is introduced into the chamber during film forming to react with the particles sputtered from the target, and the permeated The oxide obtained by this reaction is formed in the frame portion.
在成膜後膜發生氧化時,變成氧被事後地導入於膜。為此,膜的密度上升而內部應力變高,存在附膜框部翹曲之虞。於是,優選上,如上述的構成般,將已預先氧化的氧化物形成於框部而形成膜。只要作成為如此,即難發生在成膜後膜隨氧的導入而氧化之事態,可更確實地抑制附膜框部翹曲之事態。When the film is oxidized after film formation, oxygen is subsequently introduced into the film. For this reason, the density of the film increases, internal stress becomes high, and there is a possibility that the film-attached frame portion may warp. Therefore, it is preferable to form a film by forming a pre-oxidized oxide on the frame portion as in the above-mentioned configuration. As long as it is done in this way, it is difficult for the film to be oxidized due to the introduction of oxygen after film formation, and it is possible to more reliably suppress the warping of the film-attached frame.
(4)如上述(1)~(3)的構成,其中,優選上,在成膜程序,使用原子半徑為0.230nm以下的原子而形成膜。(4) In the configurations of (1) to (3) above, preferably, the film is formed using atoms having an atomic radius of 0.230 nm or less in the film forming process.
形成膜的原子的原子半徑越大,越有膜的內部應力變高之傾向。亦即,形成膜的原子的原子半徑越大,於附膜框部發生翹曲之可能性越高。於是,優選上,如上述的構成般,規定形成膜的原子的原子半徑。另外,本發明中的原子半徑,指單原子之半徑。The larger the atomic radius of the atoms forming the film, the higher the internal stress of the film tends to be. That is, the larger the atomic radius of the atoms forming the film is, the higher the possibility of warpage occurring in the film-attached frame portion. Therefore, it is preferable to specify the atomic radius of the atoms forming the film as in the above configuration. In addition, the atomic radius in the present invention refers to the radius of a single atom.
(5)為了解決上述的課題而創出的本發明,為一種附膜框部之製造方法,前述附膜框部具備具有貫通部的玻璃製的框部及形成於框部的一端面之膜,前述附膜框部之製造方法包含:準備框部之準備程序;以及在腔室內對靶進行濺鍍從而在框部的一端面形成膜的成膜程序;在成膜程序,靶與框部之間的距離,為50~200mm。(5) The present invention, made in order to solve the above-mentioned problems, is a method of manufacturing a film-attached frame portion, wherein the film-attached frame portion includes a glass-made frame portion having a through portion and a film formed on one end surface of the frame portion, The aforementioned manufacturing method of the film-attached frame includes: a preparatory procedure for preparing the frame; and a film-forming procedure of sputtering the target in the chamber to form a film on one end surface of the frame; The distance between them is 50~200mm.
只要作成為如此,即可享有與已述之對應的構成同樣的作用效果。As long as it is done in this way, it is possible to enjoy the same function and effect as that of the above-mentioned corresponding configuration.
(6)為了解決上述的課題而創出的本發明,為一種附膜框部之製造方法,前述附膜框部具備具有貫通部的玻璃製的框部及形成於框部的一端面之膜,前述附膜框部之製造方法包含:準備框部之準備程序;以及在腔室內對靶進行濺鍍從而在框部的一端面形成膜的成膜程序;在成膜程序,在成膜時對腔室內導入氧氣而予以與從靶進行了濺鍍的粒子發生反應,將透過該反應從而獲得的氧化物形成於框部。(6) The present invention, made in order to solve the above-mentioned problems, is a method of manufacturing a film-attached frame portion, the film-attached frame portion comprising a glass-made frame portion having a through portion and a film formed on one end surface of the frame portion, The aforementioned manufacturing method of the film-attached frame part includes: a preparation procedure for preparing the frame part; and a film forming procedure of sputtering a target in the chamber to form a film on one end surface of the frame part; Oxygen gas is introduced into the chamber to react with the particles sputtered from the target, and an oxide obtained through the reaction is formed on the frame portion.
只要作成為如此,即可享有與已述之對應的構成同樣的作用效果。As long as it is done in this way, it is possible to enjoy the same function and effect as that of the above-mentioned corresponding configuration.
(7)為了解決上述的課題而創出的本發明,為一種附膜框部之製造方法,前述附膜框部具備具有貫通部的玻璃製的框部及形成於框部的一端面之膜,前述附膜框部之製造方法包含:準備框部之準備程序;以及在腔室內對靶進行濺鍍從而在框部的一端面形成膜的成膜程序;在成膜程序,使用原子半徑為0.230nm以下的原子而形成前述膜。(7) The present invention, made in order to solve the above-mentioned problems, is a method of manufacturing a film-attached frame portion, the film-attached frame portion comprising a glass-made frame portion having a through portion and a film formed on one end surface of the frame portion, The aforementioned manufacturing method of the film-attached frame includes: a preparation procedure for preparing the frame; and a film-forming procedure of sputtering a target in the chamber to form a film on one end surface of the frame; in the film-forming procedure, an atomic radius of 0.230 nm or less atoms to form the aforementioned film.
只要作成為如此,即可享有與已述之對應的構成同樣的作用效果。As long as it is done in this way, it is possible to enjoy the same function and effect as that of the above-mentioned corresponding configuration.
(8)為了解決上述的課題而創出的本發明,為一種保護蓋之製造方法,前述保護蓋具備具有貫通部的玻璃製的框部及將貫通部閉塞的玻璃製的蓋部,前述保護蓋之製造方法具備:作為框部而準備以如上述(1)~(7)的方法而製造的附膜框部之準備程序;以及在位於附膜框部的形成有膜的一端面的相反側之另一端面以將貫通部閉塞的方式接合蓋部的接合程序。(8) In order to solve the above-mentioned problems, the present invention provides a method of manufacturing a protective cover, wherein the protective cover includes a frame made of glass having a penetrating portion and a cover made of glass that closes the penetrating portion, the protective cover The manufacturing method includes: a preparation procedure for preparing a film-attached frame part manufactured by the methods (1) to (7) above as a frame part; The other end face is joined to the cover part in such a way that the through part is blocked.
只要作成為如此,即使得附膜框部的翹曲被抑制,故將附膜框部與蓋部確實地接合。亦即,可提供可維持高氣密性的保護蓋。 [對照先前技術之功效] As long as it is done in this way, the warping of the film-attached frame portion is suppressed, so that the film-attached frame portion and the cover portion are reliably bonded. That is, a protective cover capable of maintaining high airtightness can be provided. [compared to the effect of prior art]
依本發明時,可確實地抑制透過濺鍍在一端面形成了膜的附膜框部的翹曲。According to the present invention, warping of the film-attached frame portion in which a film is formed on one end surface by sputtering can be reliably suppressed.
圖1例示本發明的一實施方式之電子裝置1。FIG. 1 illustrates an electronic device 1 according to one embodiment of the present invention.
本實施方式之電子裝置1,具備電子零件2、搭載電子零件2的基材3及以將電子零件2收容於內部的方式接合於基材3的保護蓋4。另外,在以下的說明,方便上使基材3側為下、使保護蓋4側為上而說明,惟上下方向不限定於此。The electronic device 1 of the present embodiment includes an
基材3與保護蓋4(框部5),能以雷射接合、軟銲、玻璃膠(glass frit)接合等的任意的方法而接合。The
電子零件2不特別限定,舉例如雷射模組、LED、光感測器、攝像元件、光開關等的光學裝置。在本實施方式,電子零件2為紫外線LED(發光元件),電子裝置1為發光裝置。The
基材3由例如金屬、金屬氧化物陶瓷、LTCC或金屬氮化物陶瓷構成。金屬方面,舉例如銅、金屬矽等。金屬氧化物陶瓷方面,舉例如氧化鋁等。LTCC方面,舉例如將包含結晶性玻璃與耐火填料之複合粉末予以燒結者等。金屬氮化物陶瓷方面,舉例如氮化鋁等。在本實施方式,基材3由氮化鋁構成。The
在本實施方式,基材3為上表面3a及下表面3b皆由平面構成的板狀體。另外,基材3亦可在上表面3a之中的被搭載電子零件2的部分設有凹部。In the present embodiment, the
保護蓋4具備:具有貫通部(貫通孔)H的玻璃製的框部5;以及以將貫通部H閉塞的方式接合於框部5之上端面5a的玻璃製的蓋部6。The
框部5與蓋部6,能以雷射接合、玻璃膠(glass frit)接合等的任意的方法進行接合。The
在本實施方式,於框部5的下端面5b,形成有膜7。同樣地,於蓋部6之上表面6a及下表面6b,亦形成有膜8、9。膜7、8、9方面,可使用各種功能膜,在本實施方式為抗反射膜(AR膜)。抗反射膜由例如折射率相對低的低折射率層與折射率相對高的高折射率層被交替積層的介電體多層膜構成。膜7、8、9可透過例如濺鍍法而形成。膜7、8、9的厚度,為了一面維持膜的強度,一面迴避膜與基材3或蓋部6的熱脹係數的失配的影響導致的破損,優選上為10~500nm、20~400nm,尤優選上為120~230nm。In the present embodiment, the
框部5為在中心具有延伸於厚度方向(上下方向)的貫通部H之筒狀體。框部5包圍被收容於與貫通部H對應的空間之電子零件2的周圍。The
在本實施方式,雖框部5被以四角筒構成,惟亦可為圓筒等的其他筒狀形狀。In this embodiment, although the
在本實施方式,框部5的內壁面5c雖為非傾斜面(垂直面),惟不限定於此。框部5的內壁面5c,亦可為了使通過蓋部6的光(紫外線)的取出效率提升,以隨著從框部5的下端面5b側朝往上端面5a側而從內側朝外側遷移的傾斜面而構成。In this embodiment, although the
貫通部H可對框部5的原材透過實施蝕刻加工、雷射加工、噴砂加工等從而形成。The penetration portion H can be formed by performing etching processing, laser processing, sandblasting, or the like on the original material of the
框部5的厚度(上下方向尺寸),優選上比電子零件2大,優選上比電子零件2大0.01~1mm大,較優選上大0.05~0.5mm,最優選上大0.1~0.2mm。The thickness (dimension in the vertical direction) of the
在本實施方式,蓋部6為上表面6a及下表面6b皆由平面構成的板狀體。另外,蓋部6亦可為上表面6a側呈凸狀的曲面狀。In this embodiment, the
蓋部6的厚度(上下方向尺寸),為0.1~1.0mm、0.2~0.8mm,優選上為0.3~0.6mm。The thickness (dimension in the vertical direction) of the
構成框部5及蓋部6之玻璃,不特別限定,例如質量%下含有50~80%之SiO
2、1~45%之Al
2O
3+B
2O
3、0~25%之Li
2O+Na
2O+K
2O、0~25%之MgO+CaO+SrO+BaO。
The glass constituting the
接著,說明被如以上般構成的電子裝置1之製造方法。Next, a method of manufacturing the electronic device 1 configured as above will be described.
如示於圖2,電子裝置1之製造方法,包含:準備在下端面5b形成有膜7的附膜框部5的附膜框部準備程序S1;準備在上表面6a及下表面6b分別形成有膜8、9的附膜蓋部6的附膜蓋部準備程序S2;將附膜框部5與附膜蓋部6接合而獲得保護蓋4的第一接合程序S3;準備被搭載電子零件2的基材3的附電子零件基材準備程序S4;以及將附電子零件基材3與保護蓋4接合而獲得電子裝置1的第二接合程序S5。以下,針對含於此等程序之中的附膜框部準備程序(亦即,附膜框部5之製造方法)S1詳細進行說明。As shown in FIG. 2 , the manufacturing method of the electronic device 1 includes: preparing the film-attaching frame portion preparation procedure S1 of the film-attaching
附膜框部準備程序S1包含:準備未形成有膜的框部5的準備程序;以及如示於圖3般對在準備程序被準備的框部5的下端面5b透過濺鍍法形成膜7的成膜程序S11。The film-attached frame portion preparation procedure S1 includes: a preparation procedure for preparing a
在成膜程序S11,在腔室10內對靶11進行濺鍍,從而在框部5的下端面5b形成膜7。In the film forming step S11 , the
在成膜程序S11,成膜時的腔室10內的壓力,優選上為0.1~1.0Pa、0.2~0.9Pa、0.3~0.8Pa,尤優選上為0.3~0.7Pa。In the film forming procedure S11, the pressure in the
將成膜時的腔室10內的壓力的下限如上述般規定,使得從靶11濺鍍的粒子12衝撞於框部5的下端面5b之能量被抑制。為此,形成於框部5的下端面5b的膜7的內部應力被抑制,可抑制附膜框部5翹曲之事態。另一方面,將成膜時的腔室10內的壓力之上限如上述般規定,使得可減低腔室10內的雜質混入於成膜的情形。The lower limit of the pressure in the
在成膜程序S11,靶11與框部5之間的距離D,優選上為50~200mm、60~180mm、70~150mm,尤優選上為80~120mm。In the film forming procedure S11, the distance D between the
將靶11與框部5之間的距離D的下限如上述般規定,使得從靶11濺鍍的粒子12衝撞於框部5的下端面5b之能量被抑制。為此,形成於框部5的下端面5b的膜7的內部應力被抑制,可抑制附膜框部5翹曲之事態。另一方面,於濺鍍法,靶與成膜對象物的距離變大時,存在膜的厚度的控制變困難之虞。為此,將靶11與框部5之間的距離D之上限如上述般規定,使得形成於框部5的下端面5b的膜7的膜厚的控制變容易。再者,將靶11與框部5之間的距離D之上限如上述般規定,使得可迴避腔室10變大為所需以上。The lower limit of the distance D between the
在成膜程序S11,優選上在成膜時對腔室10內導入氧氣而予以與從靶11進行了濺鍍的粒子12反應,將透過該反應而獲得的氧化物形成於框部5的下端面5b。亦即,在成膜程序S11,優選上使用反應性濺鍍法。In the film forming step S11, it is preferable to introduce oxygen gas into the
在成膜後膜7發生氧化時,變成氧被事後地導入於膜7。亦即,據此膜7的密度上升而內部應力變高,存在附膜框部5翹曲之虞。為此,優選上使用反應性濺鍍法,將預先被氧化的氧化物形成於框部5的下端面5b。只要作成為如此,即難發生在成膜後膜7隨氧的導入而氧化之事態,可抑制附膜框部5翹曲之事態。When the
在成膜程序S11,優選上使用形成膜7的原子的原子半徑為0.230nm以下的原子而成膜。形成膜7的原子的原子半徑,較優選上為0.220nm以下,更優選上為0.200 nm以下,尤優選上為0.180nm以下。In the film-forming procedure S11, it is preferable to use atoms forming the
形成膜7的原子的原子半徑越大,越有膜7的內部應力變高之傾向。亦即,形成膜7的原子的原子半徑越大,於附膜框部發生翹曲之可能性越高。為此,如上述,優選上規定形成膜7的原子的原子半徑之上限。形成膜7的原子的原子半徑,可透過例如X射線繞射裝置而測定。形成膜7的原子的原子半徑,可透過變更例如成膜材料從而調整。形成膜7的原子的原子半徑成為0.230nm以下的成膜材料(靶)方面,舉例如矽、鉿、鈮等。The larger the atomic radius of the atoms forming the
並且,只要為如以上般製造的附膜框部5,即附膜框部5的翹曲被抑制,故可於第一接合程序S3,將附膜框部5與蓋部6確實地接合。亦即,可提供可維持高氣密性的保護蓋4。因此,只要使用如此的保護蓋4,即可製造可靠性高的電子裝置1。In addition, as long as the film-attached
另外,本發明不限定於上述的實施方式的構成,亦不限定於上述的作用效果。本發明在不脫離本發明的要旨的範圍內可進行各種的變更。In addition, the present invention is not limited to the configuration of the above-mentioned embodiment, nor is it limited to the above-mentioned effects. Various changes can be made in this invention in the range which does not deviate from the summary of this invention.
在上述的實施方式,雖說明僅在框部5的下端面5b形成膜7之情況,惟只要為以符合上述的條件的方法而形成之膜7,則亦可僅在框部5之上端面5a形成膜,亦可將膜形成於框部5之上端面5a及下端面5b雙方。In the above-mentioned embodiment, although the case where the
於上述的實施方式,蓋部6的下表面6b的膜9,亦可作成為僅形成於除蓋部6與框部5的接合部外的區域。或者,蓋部6之上表面6a及下表面6b的膜8、9,亦可省略至少一方。In the above-mentioned embodiment, the
於上述的實施方式,亦可在框部5的內壁面5c,形成抗反射膜等的功能膜。
[實施例]
In the above-described embodiment, a functional film such as an antireflection film may be formed on the
以下,雖針對本發明基於實施例詳細地說明,惟本發明不限定於此等實施例。另外,實施例及比較例,皆使成膜前的框部為35mm見方的四角筒,使其厚度為0.2mm。此外,附膜框部的翹曲,使用Apollo公司製雷射位移計式翹曲測定器進行了測定。另外,如此的附膜框部的情況下,框部的翹曲越大,越容易發生附膜框部與蓋部的接合不良。Hereinafter, although the present invention will be described in detail based on examples, the present invention is not limited to these examples. In addition, in both Examples and Comparative Examples, the frame portion before film formation was made into a square tube of 35 mm square, and the thickness thereof was 0.2 mm. In addition, the warpage of the film-attached frame portion was measured using a laser displacement meter-type warpage measuring device manufactured by Apollo Corporation. In addition, in the case of such a film-attached frame portion, the larger the warp of the frame portion is, the more likely it is to cause poor bonding between the film-attached frame portion and the cover portion.
(1)腔室內的壓力 針對在將成膜時的腔室內的壓力予以變化的情況下成膜後的附膜框部的翹曲如何變化進行了測定。將該結果示於表1。樣品No.1~2為實施例,樣品No.3為比較例。於樣品No.1~3中的任一者,靶與框部之間的距離皆設為80mm,成膜材料(靶)採用矽與鉿。 (1) Pressure in the chamber It was measured how the warpage of the film-attached frame portion after film formation changes when the pressure in the chamber during film formation is changed. The results are shown in Table 1. Sample No.1-2 are examples, and sample No.3 is a comparative example. In any of samples No.1~3, the distance between the target and the frame is set to 80mm, and the film-forming material (target) is silicon and hafnium.
從表1可確認,成膜時的腔室內的壓力超過0.05Pa時,附膜框部的翹曲減少。From Table 1, it can be confirmed that when the pressure in the chamber during film formation exceeds 0.05 Pa, the warpage of the film-attached frame portion decreases.
(2)靶與框部之間的距離 針對在將成膜時的靶與框部之間的距離予以變化的情況下成膜後的附膜框部的翹曲如何變化進行了測定。將該結果示於表2。樣品No.4~5為實施例,樣品No.6為比較例。於樣品No.4~6中的任一者,成膜時的腔室內的壓力皆設為0.30Pa,成膜材料(靶)採用矽與鉿。 (2) Distance between target and frame How the warpage of the film-attached frame portion after film formation changes when the distance between the target and the frame portion during film formation is changed was measured. The results are shown in Table 2. Sample No.4-5 are examples, and sample No.6 is a comparative example. In any of samples No. 4 to 6, the pressure in the chamber during film formation was set to 0.30 Pa, and the film formation materials (targets) were silicon and hafnium.
從表2可確認,成膜時的靶與框部之間的距離超過40mm時,附膜框部的翹曲減少。From Table 2, it was confirmed that the warpage of the film-coated frame portion decreased when the distance between the target and the frame portion at the time of film formation exceeded 40 mm.
(3)成膜方法 針對在將成膜方法予以變化的情況下成膜後的附膜框部的翹曲如何變化進行了測定。將該結果示於表3。樣品No.7為實施例,樣品No.8為比較例。在樣品No.7(實施例),採用了下述的反應性濺鍍法:在成膜時對腔室內導入氧氣而予以與從靶進行了濺鍍的粒子發生反應,將透過該反應而獲得的氧化物形成於框部。在樣品No.8(比較例),採用了將從靶進行了濺鍍的粒子形成於框部的非反應性濺鍍法。於樣品No.7~8中的任一者,成膜時的腔室內的壓力皆設為0.30Pa,靶與框部之間的距離設為80mm,成膜材料(靶)採用矽與鉿。 (3) Film forming method How the warpage of the film-attached frame portion after film formation changes when the film formation method is changed was measured. The results are shown in Table 3. Sample No. 7 is an example, and sample No. 8 is a comparative example. In sample No. 7 (Example), the following reactive sputtering method was used: during film formation, oxygen gas was introduced into the chamber to react with the particles sputtered from the target, and the obtained The oxide is formed on the frame portion. In sample No. 8 (comparative example), a non-reactive sputtering method in which particles sputtered from a target were formed on a frame portion was employed. In any of samples No.7~8, the pressure in the chamber during film formation was set to 0.30Pa, the distance between the target and the frame was set to 80mm, and the film-forming materials (targets) were silicon and hafnium.
從表3可確認,採用了反應性濺鍍法之一方,附膜框部的翹曲減少。From Table 3, it can be confirmed that the warpage of the film-attached frame portion was reduced by using one of the reactive sputtering methods.
(4)成膜材料 針對在以由於成膜材料的變更使得形成於附膜框部的膜的原子的原子半徑為不同者進行了成膜的情況下成膜後的附膜框部的翹曲如何變化進行了測定。將該結果示於表4。樣品No.9為實施例,樣品No.10為比較例。在樣品No.9(實施例),成膜材料(靶)方面使用了鋁。在樣品No.10(比較例),成膜材料(靶)方面使用了銫。於樣品No.9~10中的任一者,成膜時的腔室內的壓力皆設為0.30Pa,靶與框部之間的距離設為80mm。 (4) Film-forming materials It was measured how the warpage of the film-attached frame portion after film formation changed when the atomic radius of the atoms of the film formed on the film-attached frame portion was different due to the change of the film-forming material. The results are shown in Table 4. Sample No. 9 is an example, and sample No. 10 is a comparative example. In Sample No. 9 (Example), aluminum was used as a film-forming material (target). In sample No. 10 (comparative example), cesium was used as a film-forming material (target). In any of sample Nos. 9 to 10, the pressure in the chamber during film formation was 0.30 Pa, and the distance between the target and the frame was 80 mm.
從表4可確認,形成膜的原子的原子半徑不足0.265nm時,附膜框部的翹曲減少。From Table 4, it was confirmed that when the atomic radius of the atoms forming the film was less than 0.265 nm, the warpage of the film-attached frame portion was reduced.
1:電子裝置 2:電子零件 3:基材 4:保護蓋 5:框部 6:蓋部 7:膜 8:膜 9:膜 10:腔室 11:靶 12:濺鍍粒子 D:距離 H:貫通部 S1:附膜框部準備程序 S2:附膜蓋部準備程序 S3:第一接合程序(附膜框部與附蓋框部的接合) S4:附電子零件基材準備程序 S5:第二接合程序(附電子零件基材與保護蓋的接合) S11:成膜程序 1: Electronic device 2: Electronic parts 3: Substrate 4: Protective cover 5: frame 6: Cover 7: Membrane 8: Membrane 9: Membrane 10: chamber 11: target 12: Sputtering particles D: distance H: through part S1: Preparing procedures for the attached film frame S2: Preparation procedure for the membrane cap S3: the first bonding procedure (bonding of the frame portion with the film and the frame portion with the lid) S4: Attached electronic parts base material preparation procedure S5: Second bonding procedure (bonding of base material with electronic parts and protective cover) S11: Film forming procedure
[圖1]為針對本實施方式之電子裝置進行繪示的截面圖。 [圖2]為針對本實施方式之電子裝置之製造方法進行繪示的流程圖。 [圖3]為針對圖2的附膜框部的準備程序中包含的成膜程序進行繪示的截面圖。 [ Fig. 1 ] is a cross-sectional view illustrating an electronic device according to this embodiment. [ FIG. 2 ] is a flow chart illustrating a method of manufacturing an electronic device according to this embodiment. [ Fig. 3] Fig. 3 is a cross-sectional view illustrating a film forming process included in the film-attached frame preparation process of Fig. 2 .
5:框部 5: frame
5a:上端面 5a: Upper end face
5b:下端面 5b: Lower end face
7:膜 7: Membrane
10:腔室 10: chamber
11:靶 11: target
12:濺鍍粒子 12: Sputtering particles
D:距離 D: distance
S11:成膜程序 S11: Film forming procedure
Claims (8)
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JPH0375361A (en) * | 1989-08-16 | 1991-03-29 | Raimuzu:Kk | Formation of film by sputtering |
JPH05140740A (en) * | 1991-11-19 | 1993-06-08 | Limes:Kk | Formation of thin film |
JP2017147406A (en) * | 2016-02-19 | 2017-08-24 | 日機装株式会社 | Light emitting device |
JP2018006693A (en) * | 2016-07-08 | 2018-01-11 | エヌイーシー ショット コンポーネンツ株式会社 | Glass lid and duv-led device using the same |
JP6887230B2 (en) * | 2016-08-22 | 2021-06-16 | 株式会社アルバック | Film formation method |
JP2021114578A (en) * | 2020-01-21 | 2021-08-05 | 日本電気硝子株式会社 | Protective cap, frame for the same, light-emitting device, and light-emitting device array |
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