TW202302278A - Machining apparatus and machining method - Google Patents
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- 238000003754 machining Methods 0.000 title abstract description 26
- 238000000034 method Methods 0.000 title abstract description 26
- 230000033001 locomotion Effects 0.000 claims abstract description 128
- 230000007246 mechanism Effects 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims description 51
- 238000003672 processing method Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 abstract description 27
- 239000010432 diamond Substances 0.000 description 48
- 229910003460 diamond Inorganic materials 0.000 description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 7
- 238000003825 pressing Methods 0.000 description 6
- 229910001018 Cast iron Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
- B24B41/047—Grinding heads for working on plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
本發明有關進行被加工物的磨削/研磨之加工裝置。The present invention relates to a processing device for grinding/grinding a workpiece.
一直以來,矽被用作為半導體材料。半導體材料的表面會大幅影響半導體裝置的性能。因此,從過去到現在總是要求以高精度進行矽的磨削/研磨。矽基板的磨削/研磨,是將基板固定於加工桌台,以設有砥石等的加工材之加工頭將基板加壓,令加工桌台與加工頭各自旋轉,藉此進行。Silicon has long been used as a semiconductor material. The surface of a semiconductor material can greatly affect the performance of a semiconductor device. Therefore, grinding/polishing of silicon has always been required to be performed with high precision. Grinding/grinding of silicon substrates is performed by fixing the substrate on a processing table, pressing the substrate with a processing head equipped with a processing material such as a whetstone, and rotating the processing table and processing head separately.
近年來,作為次世代的半導體材料,藍寶石、GaN、SiC、鑽石係取代矽而受到矚目。GaN、SiC、及鑽石,相較於矽而言能隙寬且電介質耐壓(dielectric withstanding voltage)優良,熱傳導率高,因此近年來特別受到矚目。最近,例如藉由CVD(化學氣相蒸鍍)所致之鑽石的異質(hetero)磊晶成長,已可製造□5mm的鑽石基板,繼GaN或SiC後鑽石亦被矚目邁向實用化。In recent years, as next-generation semiconductor materials, sapphire, GaN, SiC, and diamond systems have attracted attention instead of silicon. Compared with silicon, GaN, SiC, and diamond have a wider energy gap, excellent dielectric withstand voltage, and high thermal conductivity, so they have attracted special attention in recent years. Recently, for example, heterogeneous (hetero) epitaxial growth of diamonds by CVD (Chemical Vapor Deposition) has been able to manufacture diamond substrates of □5mm, and diamonds have also been noticed to be practical after GaN or SiC.
CVD單晶鑽石的結晶品質,雖略遜於以高溫高壓(HPHT;High Pressure High Temperature)法成長的鑽石的品質,但藉由使鑽石基板的表面加工精度提升,相較於以高溫高壓法成長的鑽石可達同等以上。因此,作為鑽石基板的表面加工技術正在做各種研討。例如專利文獻1中揭示一種鑽石的研磨方法,係一面令研磨墊抵壓鑽石表面一面旋轉而研磨鑽石基板的表面。
先前技術文獻 專利文獻 Although the crystalline quality of CVD single crystal diamonds is slightly inferior to that of diamonds grown by HPHT (High Pressure High Temperature) method, by improving the surface processing accuracy of the diamond substrate, it is better than that grown by high temperature and high pressure method. Diamonds can reach the same level or more. Therefore, various studies are being conducted on surface processing technologies for diamond substrates. For example,
專利文獻1:日本特許第6367815號公報 非專利文獻 Patent Document 1: Japanese Patent No. 6367815 Non-Patent Document
非專利文獻1:Grodzinski, Paul, "Diamond Technology", N.A.G. Press, 1956 非專利文獻2:Hironori Yamashida, Hidetoshi Takeda, Hideo Aida, "Planarization of brittle materials by laser assisted machining", International Conference on Planarization/CMP Technology・November 19-21, 2014 Kobe, 344-347. Non-Patent Document 1: Grodzinski, Paul, "Diamond Technology", N.A.G. Press, 1956 Non-Patent Document 2: Hironori Yamashida, Hidetoshi Takeda, Hideo Aida, "Planarization of brittle materials by laser assisted machining", International Conference on Planarization/CMP Technology・November 19-21, 2014 Kobe, 344-347.
發明所欲解決之問題The problem to be solved by the invention
按照專利文獻1記載之發明,提到了鑽石極端地硬而化學不活潑,因此依靠習知的化學機械研磨無法進行鑽石基板的平坦化。為解決此待解問題,同文獻記載之發明中著眼於漿液(slurry)中的粒子或氧化劑,藉此謀求表面粗糙度的減低與研磨速度的提升。According to the invention described in
但,如前述般鑽石基板極硬,因此即使調整了漿液的粒子或氧化劑仍無助於研磨速度的根本性的提升。此外,為了抵壓鑽石基板並且一面旋轉一面進行加工,必須要極高的抵壓力。是故,依靠能夠進行矽基板的加工的程度的剛性之裝置,於加工中會導致裝置變形,很難以高精度進行鑽石基板的加工。又,會對鑽石基板施加過度的壓力,因此鑽石基板或平臺恐會損傷。該些待解問題,當藉由矽基板的加工裝置加工藍寶石、GaN、SiC時也可能出現。However, as mentioned above, the diamond substrate is extremely hard, so even if the particles of the slurry or the oxidizing agent are adjusted, it does not contribute to a fundamental improvement in the polishing rate. In addition, in order to press against the diamond substrate and perform processing while rotating, an extremely high pressing force is required. Therefore, a device that relies on rigidity to the extent that silicon substrates can be processed causes deformation of the device during processing, making it difficult to process diamond substrates with high precision. In addition, excessive pressure is applied to the diamond substrate, so the diamond substrate or the platform may be damaged. These unresolved problems may also arise when processing sapphire, GaN, and SiC with silicon substrate processing equipment.
此外,鑽石的加工,一般是藉由鑄鐵盤(Scaife)研磨、或研光(lapping)或是鏡面加工(polishing)而進行。這是令平臺或加工桌台旋轉,藉由將被固定於加工頭的鑽石一面抵著平臺或加工桌台一面加工時產生的摩擦熱而發生氧化還原反應,利用此反應做熱化學性研磨之方法。但,鑄鐵盤研磨中必須要很高的抵壓力,若考量裝置剛性只能進行小面積的基板的研磨。例如,矩形基板中若將一邊的長度增為2倍則面積會成為4倍,因此抵壓力不得不設為4倍。是故,以鑄鐵盤研磨來研磨鑽石基板,在大型基板不切實際。In addition, the processing of diamonds is generally carried out by grinding with a cast iron disc (Scaife), lapping or polishing. This is to make the platform or processing table rotate, and the oxidation-reduction reaction occurs by the frictional heat generated when the diamond fixed on the processing head is pressed against the platform or processing table. This reaction is used for thermochemical grinding. method. However, high resisting force is required in grinding cast iron discs, and if the rigidity of the device is considered, only small-area substrates can be ground. For example, if the length of one side of a rectangular substrate is doubled, the area will be quadrupled, so the pressing force has to be quadrupled. Therefore, it is impractical to grind diamond substrates with cast iron disc grinding on large substrates.
又,鑄鐵盤研磨中,是將硬度高的材料加壓,因此可能會形成材料表面的凹凸或變質層。此外,鑽石、藍寶石、GaN、SiC等很硬,因此即使是鑄鐵盤研磨仍會耗費研磨時間,難以得到高品質的基板材料。In addition, in cast iron disc grinding, since a material with high hardness is pressurized, unevenness or a deteriorated layer on the surface of the material may be formed. In addition, diamond, sapphire, GaN, SiC, etc. are very hard, so it takes time to polish even cast iron disks, and it is difficult to obtain high-quality substrate materials.
鑑此,本發明的待解問題在於提供一種加工裝置及加工方法,能夠以習知裝置的剛性而以高加工速率進行被加工物的加工,並且抑制被加工物的品質的劣化。 解決問題之技術手段 In view of this, the problem to be solved by the present invention is to provide a processing device and a processing method, which can process a workpiece at a high processing rate with the rigidity of the conventional device, and suppress the deterioration of the quality of the processed object. technical means to solve problems
矽基板的磨削/研磨,是對加工面均一進行磨削/研磨,因此習知是藉由平臺或是加工桌台或加工頭旋轉來進行。這是因為矽相較於鑽石等硬度較低,即使不考量源自於矽的晶向(crystal orientation)之易加工方向,仍可獲得一定程度的加工速率。此外,若令平臺或加工頭旋轉而進行磨削/研磨,則能夠謀求基板表面的均質化。鑽石等的硬材料的磨削/研磨中,亦如同矽基板的加工般,一直以來是令平臺或加工頭旋轉而進行磨削/研磨。The grinding/grinding of the silicon substrate is to grind/grind the processing surface uniformly, so it is conventionally carried out by rotating the platform or the processing table or the processing head. This is because the hardness of silicon is lower than that of diamond, so even if the easy processing direction derived from the crystal orientation of silicon is not considered, a certain degree of processing rate can still be obtained. In addition, if the stage or the processing head is rotated to perform grinding/polishing, the homogenization of the substrate surface can be achieved. In the grinding/polishing of hard materials such as diamonds, as in the processing of silicon substrates, grinding/polishing has conventionally been performed by rotating a stage or a processing head.
但,硬材料的磨削/研磨中亦是如習知般令平臺或加工頭旋轉,因此如前述般發生了加工速率低,依靠矽基板的加工裝置則裝置剛性不足這樣的待解問題。However, in the grinding/grinding of hard materials, the table or the processing head is also rotated as conventionally. Therefore, as mentioned above, the processing rate is low, and the processing device relying on the silicon substrate has insufficient rigidity of the device.
本發明團隊著眼於基板的材質的晶體結構。例如,若是藍寶石,則c面會比a面容易加工。即使是鑽石等的材料,如非專利文獻1記載般,根據其結晶面仍存在易加工方向。又,如果能朝各材料的易加工方向進行磨削/研磨,則料想加工速率會提升,並且以能夠加工矽基板的程度的裝置剛性就能研磨硬度高的材質。The team of the present invention focused on the crystal structure of the material of the substrate. For example, in the case of sapphire, the c-plane is easier to process than the a-plane. Even in materials such as diamond, as described in Non-Patent
只不過,習知的研磨裝置中是一面將平臺或加工頭旋轉一面進行研磨,因此無法朝易加工方向進行研磨。如果基板小或磨削/研磨時的旋轉半徑大,則可認為能夠大略朝易加工方向進行磨削/研磨。但,依靠習知的加工方法難以著眼於晶體結構而進行加工,以此為理由而採取基板的小型化,不符合如今盼望基板的大型化的實際情況。此外,就算碰巧能夠大略以易加工方向進行磨削/研磨,那也只是大略的加工方向的磨削/研磨,仍然是一定程度偏離易加工方向的方向的磨削/研磨。再者,習知的研磨裝置的平臺或加工頭係旋轉,因此即使將基板訂為小型而增大旋轉半徑,平臺或加工頭仍是旋轉,因此加工方向會大幅偏離易加工方向。However, in the conventional grinding device, the platform or the processing head is rotated while grinding, so the grinding cannot be performed in the direction of easy processing. If the substrate is small or the radius of rotation during grinding/polishing is large, it is considered that grinding/polishing can be roughly performed in the easy-to-process direction. However, it is difficult to process with a focus on the crystal structure by the conventional processing method, and the miniaturization of the substrate is taken as a reason, which is not in line with the actual situation of today's desire to increase the size of the substrate. In addition, even if grinding/polishing can be roughly performed in the easy-machining direction by chance, it is only grinding/polishing in a rough machining direction, and it is still grinding/polishing in a direction deviated from the easy-machining direction to some extent. Furthermore, the platform or processing head of the conventional grinding device rotates, so even if the substrate is made smaller and the radius of rotation is increased, the platform or processing head still rotates, so the processing direction will deviate greatly from the easy-to-process direction.
鑑此,本發明團隊跳脫習知般令裝置的剛性提升的觀點,而刻意採用了以往基於將加工面均一地磨削/研磨的觀點而避而不用之往復直線運動。又,為了讓加工頭朝各材料的易加工方向進行往復直線運動,在平臺或加工頭與馬達之間設置了凸輪(cam)機構。其結果,得出了以下見解,即,若平臺等的固定部及加工頭的至少一方沿著易加工方向進行往復直線運動,即使不過份地抵壓被加工物,仍能夠以高加工速率且以和習知同程度的裝置剛性進行硬材料的磨削/研磨。伴隨此,得出了以下見解,即,即使是超過□5mm的大型的鑽石基板,仍能容易地進行磨削/研磨。又,如非專利文獻2所示,即使是矽,藉由朝易加工方向進行磨削/研磨,相較於以往能夠更容易地提升加工速率,並且以更低的裝置剛性進行加工,基於這樣的見解而完成了本發明。
基於這些見解而得出的本發明如下所述。
In view of this, the team of the present invention escaped from the conventional point of view of improving the rigidity of the device, and deliberately adopted the conventional point of view based on uniform grinding/grinding of the processing surface and avoided the use of reciprocating linear motion. In addition, in order to make the processing head reciprocate and linearly move toward the easy-to-process direction of each material, a cam mechanism is provided between the platform or the processing head and the motor. As a result, it was found that if at least one of the fixed portion such as the platform and the processing head performs reciprocating linear motion along the easy-to-process direction, even if the workpiece is not pressed too much, it can be processed at a high rate and at the same time. Grinding/grinding of hard materials with the same level of rigidity as conventional equipment. Along with this, it was found that even a large diamond substrate exceeding □5 mm can be easily ground/polished. Also, as shown in Non-Patent
(1)一種加工裝置,具備固定被加工物等的固定部、及以加工材進行被加工物的磨削/研磨的加工頭,該加工裝置,其特徵為,固定部及加工頭的至少一方,具備馬達、及將馬達的旋轉運動變換成往復直線運動的凸輪機構,藉由和以凸輪機構變換而成的往復直線運動連動,進行被加工物的磨削/研磨。(1) A processing device comprising a fixing part for fixing a workpiece and the like, and a processing head for grinding/polishing the workpiece with a workpiece, wherein at least one of the fixing part and the processing head is characterized in that , equipped with a motor, and a cam mechanism that converts the rotational motion of the motor into a reciprocating linear motion, and performs grinding/grinding of the workpiece by interlocking with the reciprocating linear motion converted by the cam mechanism.
(2)如上述(1)記載之加工裝置,其中,被加工物,以在被加工物與加工材之間產生的剪力為主要的加工力而做磨削/研磨。(2) The processing apparatus described in (1) above, wherein the workpiece is ground/polished with shear force generated between the workpiece and the workpiece as the main processing force.
(3)如上述(1)或(2)記載之加工裝置,其中,往復直線運動的運動速度為100次/分鐘以上。(3) The processing device described in (1) or (2) above, wherein the motion speed of the reciprocating linear motion is 100 times/minute or more.
(4)如上述(1)~上述(3)中任一項記載之加工裝置,其中,被加工物由玻璃材料、非晶材料、單晶材料或具有劈開面的材料所構成。(4) The processing device according to any one of the above (1) to (3), wherein the workpiece is made of a glass material, an amorphous material, a single crystal material, or a material having a cleaved surface.
(5)如上述(1)~上述(4)中任一項記載之加工裝置,其中,被加工物為基板。(5) The processing apparatus according to any one of (1) to (4) above, wherein the object to be processed is a substrate.
(6)如上述(1)~上述(5)中任一項記載之加工裝置,其中,當固定部及加工頭的其中一方藉由往復直線運動而進行被加工物的磨削/研磨的情形下,另一方被固定而不動。(6) The processing device described in any one of the above (1) to (5), wherein when one of the fixed part and the processing head performs grinding/grinding of the workpiece by reciprocating linear motion Next, the other party is fixed and does not move.
(7)如上述(1)~上述(5)中任一項記載之加工裝置,其中,固定部及加工頭的各者,具備馬達、及將馬達的軸的旋轉運動變換成往復直線運動的凸輪機構,和以凸輪機構變換而成的往復直線運動連動。(7) The processing device described in any one of the above (1) to the above (5), wherein each of the fixed part and the processing head is provided with a motor, and a device for converting the rotational motion of the shaft of the motor into a reciprocating linear motion. The cam mechanism is interlocked with the reciprocating linear motion transformed by the cam mechanism.
(8)如上述(7)記載之加工裝置,其中,固定部與加工頭,彼此朝相反方向進行往復直線運動。(8) The processing device described in (7) above, wherein the fixing portion and the processing head perform linear reciprocating motions in opposite directions to each other.
(9)如上述(7)記載之加工裝置,其中,固定部及加工頭的運動速度相異,彼此周期性地反覆相反方向及同一方向的運動。(9) The processing device described in (7) above, wherein the fixed part and the processing head move at different speeds, and periodically repeat movements in opposite directions and in the same direction.
(10)如上述(1)~上述(5)中任一項記載之加工裝置,其中,當固定部及加工頭的其中一方藉由往復直線運動進行前述被加工物的磨削/研磨的情形下,另一方具備馬達,和馬達的軸的旋轉運動連動而進行旋轉運動。(10) The processing device described in any one of the above (1) to the above (5), wherein, when one of the fixed part and the processing head performs grinding/grinding of the aforementioned workpiece by reciprocating linear motion Next, the other side includes a motor, and rotates in conjunction with the rotation of the shaft of the motor.
(11)一種加工方法,係運用如上述(1)~上述(10)中任一項記載之加工裝置,該加工裝置具備固定被加工物等的固定部、及以加工材進行被加工物的磨削/研磨的加工頭,該加工方法,其特徵為,固定部及加工頭的至少一方,具備馬達、及將馬達的旋轉運動變換成往復直線運動的凸輪機構,藉由和以凸輪機構變換而成的往復直線運動連動,進行被加工物的磨削/研磨。(11) A processing method using the processing device described in any one of the above (1) to (10), the processing device includes a fixing part for fixing the workpiece, etc., and a processing material for processing the workpiece. A grinding/grinding processing head, the processing method is characterized in that at least one of the fixed part and the processing head is equipped with a motor and a cam mechanism for converting the rotational motion of the motor into a reciprocating linear motion, and the conversion is performed by and with the cam mechanism. The resulting reciprocating linear motion is linked to grind/grind the workpiece.
基於圖面詳述本發明的實施形態。本發明並不限定於以下的實施形態。亦可將各實施形態中記載的事項組合。Embodiments of the present invention will be described in detail based on the drawings. The present invention is not limited to the following embodiments. The matters described in each embodiment can also be combined.
1.加工裝置的構成
圖1為示意本實施形態之加工裝置1的一例的立體圖。加工裝置1,具備固定部10與加工頭20。固定部10被固定於台座2上的未圖示的平臺,加工頭20被固定於凸輪機構30。凸輪機構30被固定於馬達40的軸(未圖示),藉由馬達40的動力將馬達40的軸的旋轉運動變換成往復直線運動。馬達40被固定於框體3。此外,在加工裝置1,設有用來控制馬達40的旋轉速度或加工時間之未圖示的控制面板。
1. The composition of the processing device
FIG. 1 is a perspective view showing an example of a
(1)固定部
固定部10,藉由和習知同樣的夾盤機構將被加工物11等固定。作為夾盤機構,例如可舉出脫蠟、真空夾盤、靜電夾盤等。於磨削/研磨時為避免被加工物11偏離,亦可將被加工物11以治具固定。
(1) Fixed part
The fixing
固定部10,圖1中是被固定於台座2,但亦可如同圖1的加工頭20般,將固定部10固定的未圖示的平臺透過凸輪機構和馬達連接。在此情形下,馬達與凸輪機構設於台座2內,此外能夠朝圖1所示左右方向20a進行往復直線運動。設於台座2內的馬達及凸輪機構無特別限定,但亦可如同圖1的凸輪機構30及馬達40。另,當固定部10被固定於未圖示的平臺的情形下,固定部10的動作即為平臺的動作,由平臺進行往復直線運動。The fixing
當固定部10進行往復直線運動的情形下,往復直線運動的運動速度取決於馬達40的旋轉速度。運動速度較佳為100次/分鐘以上,更佳為3000次/分鐘以上。上限無特別限定,但能夠根據凸輪機構30與馬達40的性能而適宜訂定上限。例如可為100000次/分鐘,亦可為10000次/分鐘。運動速度愈快愈能夠僅依靠剪力進行被加工物11的磨削/研磨。When the fixing
此外,圖1中,加工裝置1中被加工物11是被固定於固定部10,但被加工物11亦可被固定於後述的加工頭。在此情形下,在固定部10亦可固定有砥石或研磨墊等作為加工材。作為砥石,例如可由鑽石砥粒或CBN砥粒以瓷質結合劑(vitrified bond)被黏結而構成。此外,如同習知般,亦可設計成在固定部10與被加工物11之間供給漿液、表面改質用的藥品、砥粒。In addition, in FIG. 1, the
(2)被加工物
以加工裝置1加工的被加工物11,例如可舉出矽、藍寶石、GaN、氧化鋁、SiC、鑽石的基板,較佳為玻璃材料、非晶材料、單晶材料或具有劈開(cleavage)面的材料。被加工物11,除基板外,亦可為具有結晶鑄錠、單晶塊等的形態的被加工物11。被加工物11,被固定於固定部10或加工頭20,但為了讓磨削或研磨容易沿著被加工物11的易加工方向進行,較佳為被固定於進行往復直線運動的一方。
(2) Processed object
The processed
此外,圖1中雖示意矩形狀的被加工物11,但被加工物11的形狀無特別限定。本發明中,所謂易加工方向,是根據被加工物11的材質與其加工面而得出的方向,於所有的面方位存在易加工方向。例如鑽石的易加工方向為非專利文獻1中記載的規定的方向,若為劈開面則能更容易進行磨削/研磨。矽的易加工方向,為非專利文獻2中記載的規定的方向。In addition, although the rectangular to-
(3)加工頭
加工頭20,將馬達的旋轉運動藉由凸輪機構而進行往復直線運動。例如如圖1所示,可透過凸輪機構30和馬達40連接,能夠藉由凸輪機構30進行往復直線運動。本發明中凸輪機構30的構成無特別限定,但例如可運用圖1所示的凸輪機構30。凸輪機構30,具備偏心筒31、凹構件32。偏心筒31,連接至馬達40的軸(未圖示),並且在加工頭20側的面具備驅動銷33。驅動銷33,朝凹構件32的凹部32a突出。此外,凹構件32,藉由設於圖1所示左右方向20a的未圖示的導件,而僅朝左右方向20a動作。
另,即使當前述的固定部10進行往復直線運動,且例如在台座2內設置凸輪機構30及馬達40的情形下,藉由如同上述般在凹構件32設置導件,凹構件仍僅朝左右方向20a動作。
(3) Processing head
The
一旦馬達40朝旋轉方向40a的方向旋轉,則偏心筒31亦和未圖示的馬達40的軸一起朝同方向旋轉。此時,驅動銷33以畫圓之方式旋轉,一面在凹部32a的側壁滑動一面沿著凹部32a的長邊方向被導引,於凹部32a內朝前後方向33a進行往復直線運動。When the
一旦驅動銷33以畫圓之方式旋轉,則凹構件32會以恰好相當於驅動銷33所畫的圓的直徑之距離朝左右方向20a進行往復直線運動。加工頭20被固定於凹構件32,因此如同凹構件32般朝左右方向20a進行往復直線運動。是故,馬達40的旋轉運動藉由凸輪機構30被變換成往復直線運動,加工頭20和被變換成的往復直線運動連動而在被加工物11的表面進行往復直線運動。Once the
本實施形態之加工裝置1中,說明了加工頭20藉由進行往復直線運動而進行被加工物11的磨削/研磨,但例如加工頭20亦可直接被固定於框體3而不動。在此情形下,亦可僅依靠固定部10的往復直線運動而進行被加工物11的磨削/研磨。為了讓固定部10進行往復直線運動,如前述般,例如可如同加工頭20般在台座2內設置凸輪機構30與馬達40。In the
當加工頭20進行往復直線運動的情形下,往復直線運動的運動速度較佳為100次/分鐘以上,更佳為3000次/分鐘以上。上限無特別限定,但能夠根據凸輪機構30與馬達40的性能而適宜訂定上限,例如可為100000次/分鐘以下,亦可為50000次/分鐘以下。運動速度愈快愈能夠僅依靠剪力進行被加工物11的磨削/研磨。When the
另,習知的裝置當中,為了減低磨削或研磨的不均,有些會具備讓旋轉的加工頭進行搖動運動之機構。此不均是由被加工物的加工異方性所引起。亦即,當藉由加工頭旋轉而進行磨削/研磨的情形下,易加工方向的加工量大,難加工方向的加工量小,因此導致旋轉運動所致之磨削/研磨中發生加工不均。為了抑制這樣的不均,有些裝置設有和旋轉運動一起進行搖動運動之機構。In addition, among the known devices, in order to reduce grinding or grinding unevenness, some are provided with a mechanism that allows the rotating processing head to perform an oscillating motion. This unevenness is caused by the processing anisotropy of the workpiece. That is, when the grinding/grinding is performed by the rotation of the processing head, the processing amount in the easy-to-machine direction is large, and the processing amount in the difficult-to-machine direction is small, thus causing processing failures in the grinding/grinding caused by the rotational movement. all. In order to suppress such unevenness, some devices are equipped with a mechanism that performs rocking motion together with rotational motion.
只不過,即使是具備此機構的裝置,被加工物也不是藉由搖動運動而被加工,被加工物仍是藉由加工頭的旋轉運動而被加工。這樣的習知的裝置中,加工頭進行旋轉運動,因此若搖動運動快反倒會導致不均出現,故搖動運動的運動速度刻意被設定為慢的運動,通常為1~10次/分鐘程度。是故,習知的裝置中,不可能停止旋轉運動並且僅依靠搖動運動進行基板的磨削或研磨。像這樣,習知的裝置中,雖亦有加工頭進行搖動運動者,惟是加工頭一面旋轉一面進行速度慢的搖動運動,因此和加工頭20進行往復直線運動時不進行旋轉運動的本實施形態的加工裝置1有很大不同。However, even with the device equipped with this mechanism, the workpiece is not processed by rocking motion, but is still processed by the rotary motion of the processing head. In such a known device, the processing head rotates, so if the shaking movement is fast, it will cause unevenness. Therefore, the movement speed of the shaking movement is deliberately set to be slow, usually about 1-10 times/minute. Therefore, in known devices it is not possible to stop the rotational movement and rely only on the rocking movement for the grinding or lapping of the substrate. Like this, in the known device, although there are also those who perform the swinging motion of the processing head, the processing head performs the slow swinging motion while rotating, so this embodiment does not perform the rotary motion when performing the reciprocating linear motion with the
此外,作為本實施形態的變形例,亦可固定部10與加工頭20一起進行往復直線運動。在此情形下,固定部10及加工頭20的各者會具備前述的凸輪機構30及馬達40。此外,如前述般,凸輪機構30的凹構件32,各自以未圖示的導件而僅朝左右方向20a動作。In addition, as a modified example of the present embodiment, the fixing
固定部10及加工頭20的各者的往復直線運動方向,可為同一方向亦可為相反方向。當加工頭20的往復直線運動方向和固定部10的往復直線運動方向為相反方向的情形下,各者的往復直線運動速度可為相同。當往復直線運動速度相異的情形下,會周期性地重覆的同一方向與相反方向。The reciprocating linear motion direction of each of the fixing
當固定部10與加工頭20以彼此反向而相同速度進行往復直線運動的情形下,相對速度會成為2倍。因此,相較於僅其中一方進行往復直線運動的情形,加工速率會提升。此外,當以此動作進行磨削或研磨的情形下,相對速度成為2倍因此能夠將設於固定部10及加工頭20的馬達40的旋轉數設為一半,能夠減低馬達40的負荷。例如,僅加工頭20進行往復直線運動的圖1所示加工裝置1中,假設往復直線運動速度為1000次/分鐘。而運用固定部10和加工頭20以相反方向而相同速度進行往復直線運動之裝置,若要以和前述的裝置相同的加工速度將基板加工,各者的往復直線運動速度便只需500次/分鐘。When the fixed
此外,若是固定部10和加工頭20的往復直線運動速度相異,而周期性地重覆相反方向與同一方向的動作,則會周期性地進行同一方向的研磨或磨削,因此會減低對被加工物11與加工裝置1施加的負荷,而能夠實現更高精度的表面加工。固定部10與加工頭20的往復直線運動速度的比,於前述的往復直線運動速度的範圍內,可為V
固定部:V
加工頭=1:10~10:1的範圍,更佳為1:5~5:1。若為此範圍,則能夠將被加工物11輕柔地加工,加工精度會更加提升。
In addition, if the reciprocating linear motion speeds of the fixed
本實施形態中,被加工物11的表面,是以在被加工物11與加工材之間產生的剪力為主要的加工力而進行磨削/研磨。習知的加工裝置中,不會進行在易加工方向的磨削或研磨,因此除剪力外還必須要抵壓力。因此,特別是當加工鑽石或GaN這樣高硬度的材料的情形下,必須要高度的裝置剛性,並且加工速率也無法提升。相對於此,本實施形態中,被加工物11的磨削/研磨主要是依靠剪力進行,加工頭20所致之抵壓力幾乎不作用於磨削或研磨。這是因為,當固定部10或加工頭20的往復直線運動沿著被加工物11的易加工方向進行的情形下,磨削/研磨特別容易進行,而抵壓力幾乎不必要。抵壓力可為100kg/cm
2以下,更佳為1kg/cm
2以下,亦可為0.1kg/cm
2以下,只要有加工頭20的自重所造成的抵壓力即可。抵壓力例如能夠藉由測力器(load cell)測定。
In the present embodiment, the surface of the
加工裝置1的加工頭20,亦可在被加工物11側的面設有未圖示的砥石或研磨墊作為加工材。砥石,例如可由鑽石砥粒或CBN砥粒以瓷質結合劑黏結而構成。此外,加工材未必要設置於加工頭20,亦可為含有砥粒的漿液、表面磨削/研磨用藥品、砥粒粉末。亦可一面將該些加工材供給至加工頭20與被加工物11之間一面進行磨削/研磨。
被加工物11亦可被固定於加工頭20。在此情形下,當加工材為砥石或加工工具的情形下,它們亦可被固定於固定部10。
The
本實施形態之加工裝置1,係固定部10及加工頭20的至少一方一面進行往復直線運動一面進行被加工物11的磨削/研磨。相較於習知的加工裝置般加工頭或平臺一面旋轉一面進行磨削/研磨的情形,能夠以被加工物11的易加工方向進行磨削/研磨。因此,會減低對於加工裝置1的負荷,即使是鑽石等的高硬度的被加工物11仍能以習知的裝置的剛性以高加工速率進行被加工物的磨削/研磨。In the
又,作為本實施形態的變形例,當固定部10及加工頭20的其中一方如前述般進行往復直線運動的情形下,另一方亦可如同習知的裝置般具備馬達,和馬達的軸的旋轉運動連動而進行旋轉運動。當一方進行往復直線運動並且另一方進行旋轉運動的情形下,在被加工物11上的加工材的動線會成為蛇腹狀。在此情形下,相較於固定部10及加工頭20皆進行往復直線運動的情形,會從被加工物11的易加工方向偏離蛇腹的山和谷的幅度。但,往復直線運動的運動速度和馬達40的旋轉速度連動因此會以高速運動。是故,相較於習知的裝置般固定部10與加工頭20雙方旋轉的情形,被加工物11大致會進行易加工方向的加工,因此相較於習知會抑制裝置剛性並且得到高加工速率。在此情形下,相較於習知般藉由至少一方進行旋轉運動而進行磨削/研磨的情形,會大幅減低自易加工方向的偏離,因此比起習知能夠將裝置剛性抑制得較低,加工品質亦會提升。Also, as a modified example of the present embodiment, when one of the fixed
像這樣,在一方進行旋轉運動的形態下,是設計成讓磨削/研磨的加工方向盡可能趨近被加工物11的易加工方向,因此進行往復直線運動的一方的往復直線運動速度較佳為盡可能地快。運動速度較佳為1000~100000次/分鐘,更佳為10000~80000次/分鐘。In this way, in the form of rotating motion on one side, it is designed so that the processing direction of grinding/grinding is as close as possible to the easy-to-process direction of the
當固定部10或加工頭20進行旋轉運動的情形下,旋轉機構可如同習知的裝置。此外,旋轉速度亦可如同習知的裝置,但為了設計成盡可能趨近被加工物11的易加工方向,旋轉速度較佳為盡可能地慢。運動速度為1000rpm以下,更佳為500rpm以下,再佳為100rpm以下。When the fixed
像這樣,一方進行往復直線運動而另一方進行旋轉運動的情形下的運動速度的比,較佳為V
往復直線運動:V
旋轉運動=1000:1~1:1,更佳為1000:1~160:1。若為此範圍,則即使當一方進行旋轉運動的情形下,仍能以盡可能趨近被加工物11的易加工方向之方向進行磨削或研磨。
Like this, the ratio of motion speed in the case where one side performs reciprocating linear motion and the other side performs rotational motion is preferably V reciprocating linear motion : V rotary motion = 1000: 1 ~ 1: 1, more preferably 1000: 1 ~ 160:1. If it is within this range, grinding or polishing can be performed in a direction as close as possible to the easy-to-process direction of the
依以上,本實施形態及變形例,固定部10有固定、旋轉運動、往復直線運動這3種,加工頭20亦有固定、旋轉運動、往復直線運動這3種,合計包含9種的情況。又,被加工物11包含被固定於固定部10的情形及被固定於加工頭20的情形這2種,因此合計包含18種的動作形態。According to the above, in this embodiment and the modified example, the fixing
2.加工方法
本實施形態之加工方法,例如能夠運用前述的加工裝置1而加工。詳細地說,示例固定部10被固定於台座2而不動,藉由具備鑽石砥石作為加工材的加工頭20的往復直線運動而研磨鑽石基板作為被加工物11之加工方法,運用圖2說明之。
2. Processing method
The processing method of this embodiment can process using the
圖2為本實施形態之加工方法的流程圖。首先,準備例如藉由CVD所致之鑽石的異質磊晶成長而製造出的板厚50μm~2mm之□5~7mm的鑽石基板(S1)。接下來,在固定部10貼附基板固定用膠帶(S2)。S2中,當將鑽石基板固定於加工頭20的情形下,將基板固定用膠帶貼附於加工頭20。Fig. 2 is a flow chart of the processing method of this embodiment. First, a diamond substrate of □5 to 7 mm in thickness of 50 μm to 2 mm produced by heteroepitaxial growth of diamond by, for example, CVD is prepared ( S1 ). Next, the adhesive tape for board|substrate fixing is attached to the fixing|fixed part 10 (S2). In S2 , when the diamond substrate is fixed to the
接著,將鑽石基板固定於固定部10(S3)。當研磨鑽石基板的(100)面的情形下,理想是以90°、180°、或270°的角度藉由加工頭20的往復直線運動進行研磨。例如,將鑽石基板以固定部10固定,使得相對於製造出的鑽石基板的(100)面而言90°的角度成為加工頭20的往復直線運動的方向。在鑽石基板事先設有記號以便得知易研磨方向,因此基於記號將鑽石基板固定於固定部10。Next, the diamond substrate is fixed to the fixing part 10 (S3). In the case of grinding the (100) plane of the diamond substrate, ideally, the grinding is performed at an angle of 90°, 180°, or 270° by the reciprocating linear motion of the
其後,在加工頭20開始運動前,將加工頭20抵壓至被加工物11的加工面(S4)。抵壓力可藉由測力器測定,例如以100kg/cm
2以下的抵壓力抵壓。通常來說加工頭20的自重所造成的抵壓力即可。
Thereafter, before the
接下來,在設於加工裝置1的未圖示的控制面板,設定馬達40的旋轉速度與加工時間,開始加工頭20的往復直線運動(S5),開始鑽石基板的研磨。當沒有控制面板的情形下,亦可以未圖示的外部監視器觀察被加工物11而一面監控加工量一面進行磨削或研磨。為了確認基板的研磨量,亦可途中停止加工頭20的運動,測定鑽石基板的研磨量。加工頭的往復直線運動速度可為100次/分鐘以上,例如可為3000~5000次/分鐘。
作為另一實施形態,如圖3般,亦可將圖2的S5與S4對調。亦即,亦可在加工頭20的往復直線運動開始後,將加工頭20抵壓至被加工物11的加工面。此外,當固定部10亦進行往復直線運動的情形下,固定部10的動作的時間點可和加工頭20相同。即使是固定部10及加工頭20的一方進行旋轉運動的情形,動作的時間點可為和另一方的動作相同的時間點。
成為規定的加工時間或加工量後,結束加工。
Next, the rotation speed and processing time of the
1:加工裝置
2:台座
3:框體
10:固定部
11:被加工物
20:加工頭
20a:左右方向
30:凸輪機構
31:偏心筒
32:凹構件
32a:凹部
33:驅動銷
33a:前後方向
40:馬達
40a:旋轉方向
1: Processing device
2: Pedestal
3: frame
10: fixed part
11: Processed object
20:
[圖1]圖1為示意本實施形態之加工裝置的一例的立體圖。 [圖2]圖2為本實施形態之加工方法的流程圖。 [圖3]圖3為另一本實施形態之加工方法的流程圖。 [FIG. 1] FIG. 1 is a perspective view showing an example of the processing apparatus of this embodiment. [FIG. 2] FIG. 2 is a flow chart of the processing method of this embodiment. [FIG. 3] FIG. 3 is a flow chart of another processing method of this embodiment.
1:加工裝置 1: Processing device
2:台座 2: Pedestal
3:框體 3: frame
10:固定部 10: fixed part
11:被加工物 11: Processed object
20:加工頭 20: Processing head
20a:左右方向 20a: left and right directions
30:凸輪機構 30: Cam mechanism
31:偏心筒 31: Eccentric cylinder
32:凹構件 32: Concave member
32a:凹部 32a: concave part
33:驅動銷 33: Drive pin
33a:前後方向 33a: Front and rear directions
40:馬達 40: motor
40a:旋轉方向 40a: Direction of rotation
Claims (11)
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---|---|---|---|---|
JPS5334024B2 (en) * | 1974-03-13 | 1978-09-18 | ||
JPS56176146U (en) * | 1980-05-31 | 1981-12-25 | ||
JP3652163B2 (en) * | 1999-03-15 | 2005-05-25 | キヤノン株式会社 | Polishing method |
JP2001287153A (en) * | 2000-04-05 | 2001-10-16 | Asahi Optical Co Ltd | Polisher and controlling method therefor |
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