TW202246574A - Magnetic apparatus and thin film deposition equipment for adjusting magnetic field distribution - Google Patents

Abstract

The invention provides a deposition equipment for adjusting magnetic field distribution, which includes a reaction chamber, a carrying unit, a target, a magnetic device, at least one fixed unit and at least one shielding unit. The carrying unit and the target are located in an accommodating space of the reaction chamber, wherein the carrying unit is used to carry at least one substrate, and a surface of the target faces the carrying unit and the substrate. The magnetic device is located on the other surface of the target, and forms a magnetic field in the accommodating space of the reaction chamber via the target. The fixed unit is disposed between the magnetic device and the target, and comprises an installation space for containing the shielding unit. The shielding unit is made of conductive material and is used to shield part of the magnetic field generated by the magnetic device to adjust the distribution of the magnetic field in the accommodating space.

Description

Film deposition equipment capable of adjusting magnetic field distribution and its magnetic field adjustment device

The invention relates to a thin film deposition device capable of adjusting the magnetic field distribution, which can fine-tune the magnetic field distribution in the accommodation space, and can effectively improve the uniformity of the thickness of the film deposited on the surface of the substrate.

Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD) and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment, and are widely used in the manufacturing processes of integrated circuits, light-emitting diodes and displays.

The deposition equipment mainly includes a cavity and a substrate carrying tray, wherein the substrate carrying tray is located in the cavity and is used to carry at least one substrate. Taking physical vapor deposition as an example, a target needs to be set in the chamber, wherein the target faces the substrate on the substrate holding tray. During physical vapor deposition, the inert gas and/or reaction gas can be delivered into the cavity, and the bias voltage is applied to the target material and the substrate carrier respectively.

The inert gas in the cavity forms ionized inert gas due to the action of high-voltage electric field, and the ionized inert gas will be attracted by the bias voltage on the target and bombard the target. The target atoms or molecules sputtered from the target are attracted by the bias voltage on the substrate holding plate and deposited on the surface of the substrate to form a thin film on the surface of the substrate.

Generally speaking, a plurality of magnets are usually arranged above the target, wherein the magnets can rotate relative to the target and form a magnetic field below the target. The charged particles below the target are displaced in a helical fashion by the magnetic field of the magnet. In this way, the probability of collision with gas atoms can be greatly increased, thereby improving sputtering rate, efficiency and uniformity of film deposition.

During the thin film deposition process, how to improve the uniformity of the film thickness on the substrate has always been the goal of various process factories. The present invention proposes a thin film deposition device capable of adjusting magnetic field distribution. At least one fixing unit is mainly arranged between the magnetic device and the target, wherein the fixing unit includes at least one setting space. At least one shielding unit is arranged in the installation space of the fixing unit, and is located between part of the magnetic device and part of the target, so as to adjust the magnetic field distribution in the accommodating space.

An object of the present invention is to provide a film deposition device with adjustable magnetic field distribution, which mainly includes a reaction chamber, a carrier plate, a target, a magnetic device, a fixing unit and at least one shielding unit. The target and the carrier are located in the accommodation space of the reaction chamber, wherein one surface of the target faces the carrier and the substrate it carries. The magnetic device is arranged on the other surface of the target, and forms a magnetic field in the accommodating space via the target. The fixing unit is arranged between the magnetic device and the target, and at least one shielding unit can be arranged in the setting space of the fixing unit. The shielding unit is used to shield part of the magnetic field generated by the magnetic device, so as to form a uniform magnetic field in the accommodation space of the reaction chamber, and is beneficial to form a film with uniform thickness on the surface of the substrate.

The fixing unit is made of non-conductive material, so it will not shield the magnetic field generated by the magnetic device. In practical application, the fixing unit can be arranged on the surface of the target, or be fixed in a cavity above the target without directly contacting the target. The setting of the fixing unit will facilitate the user to install or disassemble the shielding unit, or adjust the magnetic field area covered by the shielding unit, which is beneficial to improve the convenience of use.

An object of the present invention is to provide a thin film deposition equipment and a magnetic field adjustment device that can adjust the magnetic field distribution, mainly including a reaction chamber, a carrier plate, a target, a back plate, a magnetic device, a fixing unit and at least A shielding unit. The back plate is connected with the reaction chamber and forms an accommodating space between the two. The carrier plate and the target material are located in the accommodation space, wherein the target material is arranged on one surface of the backboard, and the magnetic force device is located on the other surface of the backboard. The fixing unit is located between the magnetic device and the backboard, wherein the shielding unit is arranged in the space of the fixing unit, and is used for shielding part of the magnetic field generated by the magnetic device, so as to adjust the magnetic field distribution formed by the magnetic device in the accommodating space.

In order to achieve the above-mentioned purpose, the present invention proposes a thin film deposition device capable of adjusting the magnetic field distribution, comprising: a reaction chamber, including an accommodating space; a carrier plate, located in the accommodating space, and used to carry at least one substrate; The target is connected to the accommodation space of the reaction chamber, and includes a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target, and the first surface of the target Facing the carrier plate; a magnetic device, located in the direction of the second surface of the target; a fixing unit, located between the magnetic device and the target, and including at least one setting space; and at least one shielding unit, arranged on the fixing unit The shielding unit is arranged in the space so that the shielding unit is located between part of the magnetic device and part of the target, and shields part of the magnetic field generated by the magnetic device, wherein the shielding unit includes a conductive material.

The present invention provides a magnetic field adjustment device, suitable for a thin film deposition equipment, comprising: a target, including a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target ; a magnetic device, located in the direction of the second surface of the target; a fixing unit, located between the magnetic device and the target, and including at least one installation space; and at least one shielding unit, used to be arranged in the installation space of the fixing unit Inside, the shielding unit is located between part of the magnetic device and part of the target, and shields part of the target and part of the magnetic device, wherein the shielding unit includes a conductive material.

The thin film deposition equipment and magnetic field adjustment device with adjustable magnetic field distribution include a back plate including a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, and the fixing unit is set on the second surface of the backplane.

In the film deposition equipment and magnetic field adjustment device capable of adjusting magnetic field distribution, the shielding unit includes a plurality of grooves or a plurality of through holes.

In the thin film deposition equipment and magnetic field adjustment device capable of adjusting magnetic field distribution, the fixing unit is made of an insulating material.

In the thin film deposition equipment and magnetic field adjustment device capable of adjusting magnetic field distribution, the fixing unit is a fixing bracket and includes a plurality of hollow parts.

Please refer to FIG. 1 and FIG. 2 , which are respectively a three-dimensional cross-sectional schematic diagram, a side cross-sectional schematic diagram, and a top view of an embodiment of a magnetic field adjustment device according to an embodiment of a film deposition apparatus capable of adjusting magnetic field distribution according to the present invention. As shown in the figure, the film deposition equipment 10 with adjustable magnetic field distribution mainly includes a reaction chamber 11, a carrier plate 13, a target 15, a magnetic device 17, at least one fixing unit 16 and a shielding unit 19, wherein the target The material 15 , the fixing unit 16 , the magnetic device 17 and the shielding unit 19 are defined as a magnetic field adjusting device 100 , as shown in FIG. 3 .

The reaction chamber 11 has an accommodating space 12 for accommodating the carrier plate 13 and the target 15 . The carrier plate 13 is used to carry at least one substrate 131 , and the target 15 faces the carrier plate 13 and the substrate 131 carried thereon. Specifically, the reaction chamber 11 may be provided with an opening, for example, the opening is located above the reaction chamber 11 , wherein the accommodating space 12 is connected to the outside through the opening. The target 15 can be set or covered on the setting opening of the reaction chamber 11 and connected to the accommodation space 12 of the reaction chamber 11 , so that the target 15 and the reaction chamber 11 form a closed accommodation space 12 .

The carrier plate 13 can be displaced relative to the target material 15 , and the distance between the carrier plate 13 and the target material 15 can be changed. Specifically, the carrier plate 13 can be displaced in a direction away from the target 15, and the substrate 131 can be transported into the reaction chamber 11 and placed on the carrier plate 13 through a robot arm, or the carrier plate 13 can be placed on the carrier plate 13 through a mechanical hand. The substrate 131 is transported to the outside of the reaction chamber 11 . The carrier plate 13 can drive the carried substrate 131 towards the target 15 to reduce the distance between the substrate 131 carried by the carrier plate 13 and the target 15 , and deposit a thin film on the substrate 131 .

In the embodiment of the present invention, the film deposition device 10 with adjustable magnetic field distribution may be a physical vapor deposition chamber (PVD), and an electric field is applied to the accommodation space 12 during deposition, so that the neutral gas atoms in the accommodation space 12 Charged gas ions are formed by the impact of electrons. A bias voltage is applied to the target 15 and the carrier plate 13, so that the gas ions collide with the target 15 and generate a small amount of target particles. The target particles generated by the impact will be attracted by the bias voltage on the carrier plate 13 and deposited on the surface of the substrate 131 to form a thin film on the surface of the substrate 131 .

The target 15 includes a first surface 151 and a second surface 153, wherein the first surface 151 and the second surface 153 are two opposite surfaces on the target 15, and the first surface 151 faces the carrier plate 13 and/or the substrate 131 , for example, the appearance of the target 15 is approximately disc-shaped, the first surface 151 is the lower surface of the target 15 , and the second surface 153 is the upper surface of the target 15 . In order to increase the probability of plasma gas atom ionization, a magnetic device 17 can be provided on the second surface 153 of the target 15, wherein the magnetic device 17 will form a magnetic field in the accommodation space 12 on the first surface 151 side of the target 15, The charged particles in the accommodating space 12 are displaced in a helical manner, increasing the moving path of the charged particles and the probability of colliding with neutral gas atoms. In addition, the magnetic device 17 can be connected with a rotating shaft 171 , and the magnetic device 17 is driven to rotate relative to the target 15 through the rotating shaft 171 , so as to improve the uniformity of the thin film deposited on the surface of the substrate 131 .

The arrangement of the magnetic device 17 can increase the ionization probability of the plasma gas atoms, thereby increasing the sputtering rate and controlling the uniformity of the deposited film. However, the magnetic device 17 is usually composed of a plurality of magnets, and the distribution of the magnetic field can only be adjusted through the arrangement or position of the magnets, thereby changing the uniformity of the film deposited on the surface of the substrate 131 . Therefore, the above method of adjusting the magnetic field distribution is extremely limited, and the magnetic field generated by the magnetic device 17 cannot be fine-tuned, resulting in the inability to effectively improve the thickness uniformity of the film deposited on the surface of the substrate 131 .

For this reason, the present invention proposes a film deposition device 10 that can adjust the magnetic field distribution, and at least one fixing unit 16 is mainly arranged on the second surface 153 side of the target 15, wherein the fixing unit 16 is located between the magnetic device 17 and the target 15, and There is at least one setting space 162 . Specifically, the fixing unit 16 is made of insulating material so as not to block the magnetic force generated by the magnetic device 17 . The fixing unit 16 can be directly disposed on the second surface 153 of the target 15 , and an installation space 162 is formed between the fixing unit 16 and the second surface 153 of the target 15 .

At least one shielding unit 19 is disposed between part of the magnetic device 17 and part of the target 15 , wherein the shielding unit 19 is made of conductive material. Specifically, the shielding unit 19 can be disposed in the installation space 162 of the fixing unit 16 , and shield part of the magnetic field or magnetic force generated by the magnetic device 17 through the shielding unit 19 .

Through the setting of the shielding unit 19, the magnetic force of a part of the magnetic device 17 can be blocked, so as to reduce the magnetic field of the magnetic device 17 on the first surface 151 side of the target 15 and/or a part of the accommodating space 12, and fine-tune the magnetic device. 17 The magnetic field distribution formed in the accommodating space 12 .

Through the arrangement of the fixing unit 16 , it is beneficial for the user to arrange at least one shielding unit 19 between part of the target 15 and part of the magnetic device 17 , and use the shielding unit 19 to shield part of the magnetic field generated by the magnetic device 17 . In addition, it is also convenient for the user to take out the shielding unit 19 from the setting space 162, or adjust the position of the shielding unit 19 in the setting space 162, so as to change the magnetic field area covered by the shielding unit 19, and quickly adjust the magnetic field in the accommodating space 12. magnetic field distribution.

In an embodiment of the present invention, the fixing unit 16 may be in the shape of a plate, as shown in FIGS. 1 and 6 . Specifically, a connecting cavity 18 can be arranged above the reaction cavity 11, wherein the magnetic device 17, the fixing unit 16 and the shielding unit 19 are located in the connecting cavity 18, and the second surface 153 of the target 15 is connected to the connecting cavity. Body 18 space. For example, the fixing unit 16 can be fixed on the inner surface of the connecting cavity 18 , and an installation space 162 is formed between the fixing unit 16 , the target 15 and the inner surface of the connecting cavity 18 , as shown in FIG. 1 . In different embodiments, the fixing unit 16 can also be directly arranged or fixed on the second surface 153 of the target 15 , and an installation space 162 is formed between the fixing unit 16 and the target 15 , as shown in FIG. 6 .

In another embodiment of the present invention, as shown in FIG. 3 and FIG. 7 , the fixing unit 16 can be a fixing bracket, wherein the fixing unit 16 includes a plurality of hollow parts 161 . An installation space 162 is formed between the fixing unit 16 and the target 15 , and the shielding unit 19 is arranged in the installation space 162 .

By fine-tuning the magnetic field distribution of the magnetic device 17 on the first surface 151 side of the target 15 and/or in the accommodating space 12, the thickness of the film deposited on each area of the surface of the substrate 131 can be changed, and the thickness of the film deposited on the surface of the substrate 131 can be increased. The uniformity (U%), for example, can make the uniformity of the thin film on the surface of the substrate 131 less than 1%. The following examples will illustrate the detailed implementation method and related experimental data.

In an embodiment of the present invention, as shown in FIG. 4 , the shielding unit 19 may be in the shape of a plate. In another embodiment of the present invention, as shown in FIG. 5 , the shielding unit 19 of the present invention has a body portion 190, at least one through hole 192 and/or at least one groove 194, wherein the body portion 190 of the shielding unit 19 and the through hole 192 and the groove 194 have different shielding effects on the magnetic force generated by the magnetic device 17 . Therefore, the magnetic force generated by the magnetic device 17 can be shielded by the shielding unit 19 having the perforation 192 and/or the groove 194 , so that the magnetic field distribution formed by the magnetic device 17 in the accommodating space 12 can be further fine-tuned.

In an embodiment of the present invention, as shown in FIG. 2 , a stopper 111 can be provided in the accommodation space 12 of the reaction chamber 11, wherein one end of the stopper 111 is connected to the reaction chamber 11, and the other end of the stopper 111 is An opening 112 is formed. The carrier plate 13 can approach the direction of the target material 15 and enter or contact the opening 112 formed by the stopper 111, wherein the reaction chamber 11, the carrier plate 13, the target material 15 and the stopper 111 will be separated in the accommodating space 12. A reaction space 121 is created, and thin film deposition is performed on the substrate 131 on the carrier plate 13 in the reaction space 121 . In addition, the magnitude and distribution of the magnetic field in each area of the reaction space 121 are finely adjusted through the shielding unit 19 to form a thin film with uniform thickness on the surface of the substrate 131 .

In an embodiment of the present invention, the shielding unit 19 can be directly disposed on the second surface 153 of the target 15 and electrically connected to the target 15 , wherein the target 15 is not electrically connected to the reaction chamber 11 . In another embodiment of the present invention, the shielding unit 19 may not be directly connected to the target 15, and may be grounded through a grounding wire or a grounding unit.

In addition, the number of shielding units 19 disposed on the second surface 153 of the target 15 may be plural, and may be arranged arbitrarily on the fixing units 16 of the second surface 153 of the target 15 . In addition, the area or shape of each shielding unit 19 can be different, and can be arranged on the second surface 153 of the target 15 to form a shielding structure of any shape.

In an embodiment of the present invention, the density or area of the through holes 192 and/or the grooves 194 disposed on the plurality of shielding units 19 on the second surface 153 of the target 15 are different, as shown in FIG. 5 .

In an embodiment of the present invention, as shown in FIG. 7 , the magnetic field adjustment device 100 and/or the reaction chamber 11 may include a back plate 113, wherein the back plate 113 includes a first surface 1131 and a second surface 1133, and the back plate 113 includes a first surface 1131 and a second surface 1133. The first surface 1131 of the plate 113 is connected to the second surface 153 of the target 15 , and the fixing unit 16 and/or the shielding unit 19 are disposed on or in the direction of the second surface 1133 of the back plate 113 . In addition, at least one groove can also be set on the second surface 1133 of the back plate 113 or the second surface 153 of the target 15, wherein the shielding unit 19 is arranged in the groove in a similar mosaic manner, and the fixing unit 16 covers the groove. Groove and shielding unit 19.

Please refer to FIG. 8 , which is a flow chart of the steps of the deposition method of the deposition device with adjustable magnetic field distribution according to the present invention. Please refer to FIG. 1 and FIG. 2 together. First, a first substrate 133 is placed on the carrier plate 13 of the deposition device 10 with adjustable magnetic field distribution, as shown in step 21 . Specifically, the first substrate 133 can be placed on the carrier plate 13 through a robot arm through the inlet and outlet 115 of the reaction chamber 11, and then the carrier plate 13 will drive the first substrate 133 to move toward the direction of the target 15, and A reaction space 121 is formed between the reaction chamber 11 , the stopper 111 , the target 15 and the carrier plate 13 .

A thin film is deposited on the first substrate 133 through the deposition device 10 to form a thin film on the surface of the first substrate 133 , as shown in step 23 . Specifically, an electric field may be applied to gas atoms in the reaction space 121 to generate charged gas ions. Applying a bias voltage to the target 15 and the carrier plate 13, so that the charged gas ions hit the target 15 to generate target particles, which will be attracted by the bias voltage on the carrier plate 13 and deposited on the first substrate 133, A thin film is formed on the surface of the first substrate 133 .

The thickness of the film deposited on the surface of the first substrate 133 is measured, as shown in step 25 . Specifically, the film thickness of each region on the surface of the first substrate 133 can be measured to obtain the uniformity of the film.

As shown in Figure 9, it is a distribution diagram of the film thickness deposited on the surface of the substrate by the deposition equipment of the prior art, or a distribution diagram of the thickness of the film deposited on the surface of the first substrate by the deposition equipment and deposition method of the present invention, wherein the substrate 131 Or the film resistance (RsAvg) deposited on the surface of the first substrate 133 is about 47.4 ohms/square (Ω/sq), and the uniformity (Rs 2Avg-U%) is 3.47%.

In practical application, according to the thickness distribution of the film on the first substrate 133 as shown in FIG. In order to shield part of the magnetic field generated by the magnetic device 17 through the shielding unit 19 , wherein the magnetic field in the reaction space 121 below the shielding unit 19 is relatively small, as shown in step 27 .

In practical applications, the substrate 131 and the target 15 can be divided into a plurality of regions, wherein the plurality of regions on the target 15 correspond to the plurality of regions of the substrate 131 . Then, according to the film thickness of each area on the substrate 131 , the shielding unit 19 is selected to be disposed in the installation space 162 corresponding to the fixing unit 16 , so as to adjust the film thickness of each area on the substrate 131 .

In an embodiment of the present invention, the thickness of the film on the first substrate 133 can be divided into multiple thicknesses, for example, the first region of the first substrate 133 has a first thickness, and the second region of the first substrate 133 has a thickness. A second thickness, wherein the first thickness is greater than the second thickness. Then the shielding unit 19 is arranged in the setting space 162 of the fixing unit 16 between the magnetic device 17 and the target 15 corresponding to the first region and/or the first thickness, to shield the magnetic field corresponding to the first region, for example, the shielding unit 19 The target 15 is arranged in a vertically extending position of the first region having the first thickness.

After the above adjustment steps are completed, a second substrate 135 can be placed on the susceptor 13 , and a thin film is deposited on the second substrate 135 .

As shown in Figure 10, it is a distribution diagram of the film thickness deposited on the surface of the second substrate 135 by the deposition equipment with adjustable magnetic field distribution of the present invention, wherein the sheet resistance (RsAvg) deposited on the surface of the second substrate 135 is about 45.8 ohms/square (Ω/sq), while the uniformity (Rs 2Avg-U%) is 0.91%. From the film thickness distribution shown in Figure 9 and Figure 10, it can be clearly seen that the deposition equipment 10 and its deposition method with adjustable magnetic field distribution according to the present invention can indeed effectively improve the film deposited on the surface of the substrate 131 or the second substrate 135 Evenness.

As shown in FIG. 11 , it is a graph of the uniformity U% and sheet resistance of different substrates 131 or second substrates 135 deposited in batches by the deposition equipment 10 with adjustable magnetic field distribution of the present invention. As shown in the figure, it can be After adjusting the magnetic field distribution of the deposition equipment 10, the film resistance deposited on the surface of the substrate 131 or the second substrate 135 can be maintained at 44 to 46 ohms/square (Ω/sq) under the same process conditions, Moreover, the uniformity of the films is less than 1%, which shows that through the deposition equipment and deposition method described in the present invention, a film with a uniform thickness can be continuously and repeatedly deposited on the surface of the substrate 131 .

The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.

10: Film deposition equipment with adjustable magnetic field distribution 100: Magnetic field adjustment device 11: Reaction chamber 111: block 112: opening 113: Backplane 1131: first surface 1133: second surface 115: inlet and outlet 12:Accommodating space 121: Reaction space 13: carrying plate 131: Substrate 133: The first substrate 135: second substrate 15: target 151: first surface 153: second surface 16: fixed unit 161: hollow part 162: Set space 17: Magnetic device 171: Shaft 18: Connect the cavity 19: Masking unit 190: Body Department 192: perforation 194: Groove

[ FIG. 1 ] is a perspective cross-sectional schematic view of an embodiment of a thin film deposition device with adjustable magnetic field distribution according to the present invention.

[ Fig. 2 ] is a schematic side sectional view of an embodiment of a thin film deposition device with adjustable magnetic field distribution according to the present invention.

[ Fig. 3 ] is a top view of an embodiment of the magnetic field adjusting device of the present invention.

[ Fig. 4 ] It is a plan view of an embodiment of the target and the shielding unit of the magnetic field adjusting device of the present invention.

[ Fig. 5 ] It is a plan view of another embodiment of the target and the shielding unit of the magnetic field adjusting device of the present invention.

[ Fig. 6 ] is a schematic cross-sectional view of an embodiment of the target, the shielding unit and the fixing unit of the magnetic field adjusting device of the present invention.

[ Fig. 7 ] is a schematic cross-sectional view of another embodiment of the target, the shielding unit and the fixing unit of the magnetic field adjustment device of the present invention.

[ FIG. 8 ] is a flow chart of the steps of an embodiment of the deposition method of the thin film deposition equipment with adjustable magnetic field distribution according to the present invention.

[ Fig. 9 ] is a distribution diagram of the thickness of the film deposited on the surface of the substrate by the film deposition apparatus of the prior art.

[ Fig. 10 ] is a distribution diagram of the thickness of the film deposited on the surface of the substrate by the thin film deposition equipment capable of adjusting the magnetic field distribution of the present invention.

[ Fig. 11 ] It is a graph of film uniformity and film resistance of different substrates deposited in batches by the thin film deposition equipment with adjustable magnetic field distribution of the present invention.

10: Film deposition equipment with adjustable magnetic field distribution

11: Reaction chamber

12:Accommodating space

13: carrying plate

131: Substrate

133: The first substrate

135: second substrate

15: target

151: first surface

153: second surface

16: fixed unit

162: Set space

17: Magnetic device

171: Shaft

18: Connect the cavity

19: Masking unit

Claims (10)

A film deposition device capable of adjusting magnetic field distribution, comprising: A reaction chamber, including an accommodating space; a carrier tray, located in the accommodating space, and used to carry at least one substrate; a target, connected to the accommodation space of the reaction chamber, and includes a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target, and the first surface of the target faces the carrier plate; a magnetic device, located in the direction of the second surface of the target, and used to form a magnetic field in the accommodating space; A fixing unit is located between the magnetic device and the target, and includes at least one installation space; and At least one shielding unit is arranged in the installation space of the fixing unit, so that the shielding unit is located between part of the magnetic device and part of the target, and shields part of the magnetic field generated by the magnetic device, wherein the shielding unit includes a Conductive material. The film deposition equipment with adjustable magnetic field distribution as described in claim 1, comprising a back plate including a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, and The fixing unit is disposed on the second surface of the backboard. The thin film deposition device with adjustable magnetic field distribution as claimed in claim 1, wherein the shielding unit includes a plurality of grooves or a plurality of through holes. The thin film deposition device with adjustable magnetic field distribution as claimed in Claim 1, wherein the fixing unit is made of an insulating material. The thin film deposition device with adjustable magnetic field distribution as claimed in Claim 1, wherein the fixing unit is a fixing bracket and includes a plurality of hollowed out parts. A magnetic field adjustment device, suitable for a thin film deposition equipment, comprising: A target, including a first surface and a second surface, wherein the first surface and the second surface are two opposite surfaces on the target; a magnetic device located in the direction of the second surface of the target and used to form a magnetic field in the direction of the first surface of the target; A fixing unit is located between the magnetic device and the target, and includes at least one installation space; and At least one shielding unit is used to be arranged in the installation space of the fixing unit, so that the shielding unit is located between part of the magnetic device and part of the target, and shields part of the magnetic field generated by the magnetic device, wherein the shielding unit Including a conductive material. The magnetic field adjustment device as described in claim 6, comprising a back plate including a first surface and a second surface, the first surface of the back plate is connected to the second surface of the target, and the fixing unit is set on the second surface of the backplane. The magnetic field adjustment device as claimed in claim 6, wherein the shielding unit includes a plurality of grooves or a plurality of through holes. The magnetic field adjustment device as claimed in claim 6, wherein the fixing unit is made of an insulating material. The magnetic field adjustment device as claimed in claim 6, wherein the fixing unit is a fixing bracket and includes a plurality of hollowed out parts.

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