TW202245919A - Wafer cleaning and drying device and wafer cleaning and drying method - Google Patents
Wafer cleaning and drying device and wafer cleaning and drying method Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 148
- 238000001035 drying Methods 0.000 title claims abstract description 64
- 238000007664 blowing Methods 0.000 claims abstract description 44
- 238000005507 spraying Methods 0.000 claims abstract description 18
- 235000012431 wafers Nutrition 0.000 claims description 258
- 238000010926 purge Methods 0.000 claims description 60
- 239000007921 spray Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 19
- 239000000243 solution Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000012670 alkaline solution Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000005201 scrubbing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
本發明屬於晶圓加工技術領域,尤其關於一種晶圓清洗乾燥裝置及晶圓清洗乾燥方法。The invention belongs to the technical field of wafer processing, and in particular relates to a wafer cleaning and drying device and a wafer cleaning and drying method.
半導體矽材料是積體電路產業的主體功能材料,矽片的加工技術已逐步成為電子資訊產業發展的重要驅動力。隨著矽片直徑越來越大與積體電路特徵尺寸越來越小,對晶圓表面平坦度及去除速率提出了更高的要求,雙面研磨加工是加快表面去除速率,提升晶圓表面平坦度最有效的技術手段之一。對於雙面研磨技術,在加快去除速率的同時,高效充分的清洗乾燥過程對於保證晶圓品質意義重大,不可或缺。Semiconductor silicon materials are the main functional materials of the integrated circuit industry, and the processing technology of silicon wafers has gradually become an important driving force for the development of the electronic information industry. As the diameter of silicon wafers becomes larger and the feature size of integrated circuits becomes smaller and smaller, higher requirements are placed on the flatness and removal rate of the wafer surface. One of the most effective technical means of flatness. For the double-sided grinding technology, while accelerating the removal rate, an efficient and sufficient cleaning and drying process is of great significance and indispensable to ensure the quality of the wafer.
相關技術中所採用的清洗乾燥方式為:晶圓經雙面研磨後,先使用水管向晶圓兩面噴水,再啟動毛刷刷洗一段時間,之後再噴水洗滌,最後一次性通過氣刀完成乾燥。The cleaning and drying method used in the related technology is: after the wafer is double-sided grinding, first use a water pipe to spray water on both sides of the wafer, then start the brush to scrub for a period of time, then spray water to wash, and finally pass the air knife to complete the drying at one time.
該過程洗滌時間長,效率低,且洗滌效果不佳;且氣刀為固定位置,其固定的角度、位置、間距等都會影響乾燥效果,例如,間距過大時,一次性通過氣刀時乾燥效果不佳,晶圓表面仍有水漬殘留;間距過小,則吹掃時晶圓晃動,通過氣刀會劃傷晶圓表面,造成晶圓報廢。This process takes a long time to wash, the efficiency is low, and the washing effect is not good; and the air knife is in a fixed position, and its fixed angle, position, distance, etc. will affect the drying effect. If the gap is too small, the wafer will shake during purging, and the surface of the wafer will be scratched by the air knife, causing the wafer to be scrapped.
由此可見,相關技術中晶圓研磨後的清洗乾燥效果不好。It can be seen that the cleaning and drying effect after wafer grinding in the related art is not good.
本發明實施例提供了一種晶圓清洗乾燥裝置及晶圓清洗乾燥方法,解決了晶圓表面研磨後清洗效果差,殘存污漬,乾燥不徹底殘存水漬等缺陷,汙染測試設備,清洗乾燥時間長影響產能等問題。The embodiment of the present invention provides a wafer cleaning and drying device and a wafer cleaning and drying method, which solve the defects of poor cleaning effect after wafer surface grinding, residual stains, incomplete drying and residual water stains, polluting test equipment, and long cleaning and drying time issues affecting productivity.
本發明實施例所提供的技術方案如下: 本發明實施例提供了一種晶圓清洗乾燥裝置,包括: 用於傳送晶圓的傳送帶,該傳送帶順著傳送方向依次包括搬入段、清洗段和搬出段; 用於夾持並移動進入該清洗段的晶圓的夾持部件,該夾持部件在第一方向上能夠往復運動,以夾持並移動該晶圓至預定清洗位置,該第一方向垂直於該傳送帶的承載面; 用於對該預定位置處的晶圓表面吹風的吹掃器,該吹掃器至少能夠在第一方向和/或第二方向上往復移動,以移入或移出該晶圓表面吹掃作業位置,該第二方向垂直於該第一方向; 用於對該預定位置處的晶圓表面清洗的噴淋毛刷,該噴淋毛刷至少能夠在該第一方向和/或該第二方向上往復移動,以移入或移出該晶圓表裡清洗作業位置。 The technical scheme provided by the embodiments of the present invention is as follows: An embodiment of the present invention provides a wafer cleaning and drying device, including: Conveyor belt for transporting wafers, which sequentially includes a loading section, a cleaning section, and a loading section along the transmission direction; A clamping part for clamping and moving the wafer entering the cleaning section, the clamping part can reciprocate in a first direction to clamp and move the wafer to a predetermined cleaning position, the first direction is perpendicular to the carrying surface of the conveyor belt; a blower for blowing air on the wafer surface at the predetermined position, the blower can at least reciprocate in the first direction and/or the second direction to move into or out of the wafer surface blowing operation position, the second direction is perpendicular to the first direction; A spraying brush for cleaning the surface of the wafer at the predetermined position, the spraying brush can at least move back and forth in the first direction and/or the second direction to move into or out of the wafer surface Cleaning job location.
示例性的,該夾持部件包括至少一個第一定位柱和至少一個第二定位柱,該第一定位柱和該第二定位柱分別設於該晶圓相對兩側,且能夠沿該第二方向相向運動以夾持晶圓,或者相揹運動以釋放晶圓; 該第一定位柱至少在朝向該第二定位柱的一側設有用於卡住晶圓一側邊緣的第一卡槽,該第二定位柱至少在朝向該第一定位柱的一側設有用於卡住晶圓另一側邊緣的第二卡槽。 Exemplarily, the clamping component includes at least one first positioning column and at least one second positioning column, the first positioning column and the second positioning column are respectively arranged on opposite sides of the wafer, and can be positioned along the second Directions move towards each other to clamp the wafer, or towards each other to release the wafer; At least one side of the first positioning post facing the second positioning post is provided with a first locking groove for clamping one side edge of the wafer, and the second positioning post is provided at least on the side facing the first positioning post It is used to clamp the second slot on the edge of the other side of the wafer.
示例性的,該吹掃器包括至少一組吹掃單元,該吹掃單元包括: 吹掃風刀,該吹掃風刀為沿平行於晶圓表面方向延伸的條形風刀,且沿該條形風刀的延伸方向設置有風口; 及,旋轉軸,該旋轉軸的軸心沿該第一方向設置,該旋轉軸驅動該吹掃風刀在平行於該晶圓表面的方向上旋轉,以使該風口從該晶圓表面吹掃。 Exemplarily, the purger includes at least one set of purging units, and the purging units include: A blowing air knife, the blowing air knife is a strip-shaped air knife extending in a direction parallel to the surface of the wafer, and an air port is provided along the extending direction of the strip-shaped air knife; And, a rotating shaft, the axis of the rotating shaft is arranged along the first direction, and the rotating shaft drives the blowing air knife to rotate in a direction parallel to the wafer surface, so that the tuyere is blown from the wafer surface .
示例性的,該風口的吹風方向朝向該晶圓表面,且該風口的吹風方向與該晶圓表面之間呈預定夾角α。Exemplarily, the blowing direction of the tuyere faces the surface of the wafer, and the blowing direction of the tuyere and the surface of the wafer forms a predetermined angle α.
示例性的,該預定夾角α為30~45°。Exemplarily, the predetermined included angle α is 30-45°.
示例性的,該旋轉軸連接於該吹掃風刀的一端,該吹掃風刀的風口延伸長度大於該晶圓的半徑,且當該吹掃器位於該吹掃作業位置時,該旋轉軸的軸心偏移該晶圓的圓心。Exemplarily, the rotating shaft is connected to one end of the blowing air knife, the extension length of the tuyere of the blowing air knife is greater than the radius of the wafer, and when the blower is at the blowing operation position, the rotating shaft The axis of the axis is offset from the center of the wafer.
示例性的,該噴淋毛刷的數量有多個,且分為至少一組毛刷組,同一組該毛刷組位於該晶圓的同一側,且同一組該毛刷組中包括至少兩個噴淋毛刷。Exemplarily, the number of the spraying brushes is multiple, and is divided into at least one group of brushes, the same group of brushes is located on the same side of the wafer, and the same group of brushes includes at least two a spray brush.
本發明實施例還提供了一種晶圓清洗乾燥方法,採用本發明實施例提供的晶圓清洗乾燥裝置對晶圓進行清洗乾燥處理,該方法包括: 將晶圓從上一步驟通過該傳送帶由該搬入段傳送至該清洗段; 通過該夾持部件夾持,並沿第一方向移動該清洗段的晶圓,以使該晶圓脫離該傳送帶承載面而移動至預定清洗位置; 沿第一方向和/或第二方向移動該吹掃器,使該吹掃器移入該晶圓表面吹掃作業位置,對該晶圓表面進行第一次吹掃; 第一次吹掃作業結束,將該吹掃器移出該晶圓表面吹掃作業位置; 在該第一方向和/或該第二方向上移動該噴淋毛刷,使該噴淋毛刷移入該晶圓表面清洗作業位置,對該晶圓表面進行噴淋清洗; 噴淋清洗作業結束,將該噴淋毛刷移出該晶圓表面清洗作業位置; 沿第一方向和/或第二方向移動該吹掃器,使該吹掃器移入該晶圓表面吹掃作業位置,對該晶圓表面進行第二次吹掃,以對晶圓表面乾燥處理; 通過夾持部件將乾燥處理後的晶圓放置於該傳送帶上,並由該傳送帶從該清洗段傳送至該搬出段,以進行下一道步驟。 The embodiment of the present invention also provides a wafer cleaning and drying method. The wafer cleaning and drying device provided in the embodiment of the present invention is used to clean and dry the wafer. The method includes: transporting the wafer from the previous step through the conveyor belt from the loading section to the cleaning section; being clamped by the clamping component and moving the wafer in the cleaning section along a first direction, so that the wafer is detached from the carrying surface of the conveyor belt and moved to a predetermined cleaning position; Moving the purger along the first direction and/or the second direction, so that the purger moves into the wafer surface purging operation position, and performs the first purging on the wafer surface; After the first purging operation is completed, the purger is moved out of the wafer surface purging operation position; Moving the spray brush in the first direction and/or the second direction, so that the spray brush moves into the wafer surface cleaning operation position, and sprays and cleans the wafer surface; After the spray cleaning operation is completed, the spray brush is moved out of the wafer surface cleaning operation position; Moving the purger along the first direction and/or the second direction, so that the purger moves into the wafer surface purging operation position, and performs a second purging on the wafer surface to dry the wafer surface ; The dried processed wafers are placed on the conveyor belt by the clamping part, and are transported from the cleaning section to the unloading section by the conveyor belt for the next step.
示例性的,該晶圓清洗乾燥裝置採用前所述的晶圓清洗乾燥裝置,該方法中,採用該吹掃器對該晶圓表面進行第一次吹掃和第二次吹掃時,該吹掃器的旋轉軸偏移至該晶圓的圓心一側,驅動該吹掃風刀在平行於該晶圓表面的方向上旋轉,以對晶圓表面進行吹掃;其中, 第一次吹掃時,吹掃氣體為溫度為15~40℃的乾燥惰性氣體; 第二次吹掃時,吹掃氣體為溫度為40~45℃的乾燥惰性氣體。 Exemplarily, the wafer cleaning and drying device adopts the aforementioned wafer cleaning and drying device. In this method, when the purger is used to perform the first and second purging of the wafer surface, the The rotation axis of the blower is offset to one side of the center of the wafer, and the blowing air knife is driven to rotate in a direction parallel to the surface of the wafer to clean the surface of the wafer; wherein, When purging for the first time, the purge gas is a dry inert gas with a temperature of 15~40°C; During the second purge, the purge gas is a dry inert gas with a temperature of 40~45°C.
示例性的,該方法中,對該晶圓表面進行噴淋清洗時,具體包括: 採用鹼性溶液作為清洗液進行第一次清洗,其中該鹼性溶液各組分的體積比為:濃度為10%的NH 4OH:濃度為15%的H 2O 2:H 2O = (1∶1∶8),清洗時間為10 ~ 15 S,清洗液的流速控制在2 ~ 3 L/min; 採用超純水作為清洗液進行第二次清洗,清洗時間為15 ~ 20 S,清洗液的流速控制在20~25 L/min。 Exemplarily, in this method, when the surface of the wafer is sprayed and cleaned, it specifically includes: using an alkaline solution as the cleaning solution for the first cleaning, wherein the volume ratio of the components of the alkaline solution is: the concentration is 10% NH 4 OH: 15% H 2 O 2 : H 2 O = (1:1:8), the cleaning time is 10 ~ 15 s, and the flow rate of the cleaning solution is controlled at 2 ~ 3 L/min; Ultrapure water was used as the cleaning solution for the second cleaning, the cleaning time was 15-20 s, and the flow rate of the cleaning solution was controlled at 20-25 L/min.
示例性的,該方法中,對該晶圓表面進行噴淋清洗時,位於該晶圓同一側的同一組毛刷組中,至少兩個噴淋毛刷清洗晶圓時旋轉方向相反。Exemplarily, in this method, when spraying and cleaning the surface of the wafer, in the same group of brushes located on the same side of the wafer, at least two spraying brushes rotate in opposite directions when cleaning the wafer.
本發明實施例所帶來的有益效果如下: 本發明實施例提供的晶圓清洗乾燥裝置及晶圓清洗乾燥方法,在對晶圓進行清洗乾燥時,可以先使用吹掃器對晶圓表面進行第一次吹掃,以將晶圓表面吸附的污漬除掉,然後再使用噴淋毛刷邊噴淋液體邊轉動刷洗,對晶圓表面進行充分刷洗,之後再次使用吹掃器對晶圓表面進行第二次吹掃,以快速去除水漬,整套流程便捷高效,清潔乾燥效果優異。 The beneficial effects brought by the embodiments of the present invention are as follows: In the wafer cleaning and drying device and the wafer cleaning and drying method provided in the embodiments of the present invention, when cleaning and drying the wafer, the surface of the wafer can be purged for the first time with a purger to absorb the surface of the wafer. Remove the stains, and then use the spray brush to spray the liquid while rotating and scrubbing to fully scrub the surface of the wafer, and then use the blower to clean the surface of the wafer for a second time to quickly remove water stains , the whole process is convenient and efficient, and the cleaning and drying effect is excellent.
為利 貴審查委員了解本發明之技術特徵、內容與優點及其所能達到之功效,茲將本發明配合附圖及附件,並以實施例之表達形式詳細說明如下,而其中所使用之圖式,其主旨僅為示意及輔助說明書之用,未必為本發明實施後之真實比例與精準配置,故不應就所附之圖式的比例與配置關係解讀、侷限本發明於實際實施上的申請範圍,合先敘明。In order for the Ligui Examiner to understand the technical features, content and advantages of the present invention and the effects it can achieve, the present invention is hereby combined with the accompanying drawings and appendices, and is described in detail in the form of embodiments as follows, and the drawings used therein , the purpose of which is only for illustration and auxiliary instructions, and not necessarily the true proportion and precise configuration of the present invention after implementation, so it should not be interpreted based on the proportion and configuration relationship of the attached drawings, and limit the application of the present invention in actual implementation The scope is described first.
在本發明實施例的描述中,需要理解的是,術語“長度”、“寬度”、“上”、“下”、“前”、“後”、“左”、“右”、“豎直”、“水準”、“頂”、“底”“內”、“外”等指示的方位或位置關係為基於附圖所示的方位或位置關係,僅是為了便於描述本發明實施例和簡化描述,而不是指示或暗示所指的裝置或元件必須具有特定的方位、以特定的方位構造和操作,因此不能理解為對本發明的限制。In the description of the embodiments of the present invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical ", "horizontal", "top", "bottom", "inner", "outer" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present invention and simplifying Describes, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and operate in a specific orientation, and therefore should not be construed as limiting the invention.
此外,術語“第一”、“第二”僅用於描述目的,而不能理解為指示或暗示相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有“第一”、“第二”的特徵可以明示或者隱含地包括一個或者更多個所述特徵。在本發明實施例的描述中,“多個”的含義是兩個或兩個以上,除非另有明確具體的限定。In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of said features. In the description of the embodiments of the present invention, "plurality" means two or more, unless otherwise specifically defined.
在本發明實施例中,除非另有明確的規定和限定,術語“安裝”、“相連”、“連接”、“固定”等術語應做廣義理解,例如,可以是固定連接,也可以是可拆卸連接,或成一體;可以是機械連接,也可以是電連接;可以是直接相連,也可以通過中間媒介間接相連,可以是兩個元件內部的連通或兩個元件的相互作用關係。對於本領域的具通常知識者而言,可以根據具體情況理解上述術語在本發明實施例中的具體含義。In the embodiments of the present invention, terms such as "installation", "connection", "connection" and "fixation" should be interpreted in a broad sense unless otherwise clearly specified and limited. Disassembled connection, or integration; it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediary, and it can be the internal communication of two components or the interaction relationship between two components. Those with ordinary knowledge in the art can understand the specific meanings of the above terms in the embodiments of the present invention according to specific situations.
本發明實施例提供了一種晶圓清洗乾燥裝置及晶圓清洗乾燥方法,解決了晶圓表面研磨後清洗效果差,殘存污漬,乾燥不徹底殘存水漬等缺陷,汙染測試設備,清洗乾燥時間長影響產能等問題。The embodiment of the present invention provides a wafer cleaning and drying device and a wafer cleaning and drying method, which solve the defects of poor cleaning effect after wafer surface grinding, residual stains, incomplete drying and residual water stains, polluting test equipment, and long cleaning and drying time issues affecting productivity.
圖1和圖2所示為本發明一些實施例中提供的晶圓清洗乾燥裝置的結構示意圖。如圖1和圖2所示,本發明一些實施例中,該晶圓清洗乾燥裝置包括:傳送帶100、夾持部件200、吹掃器300和噴淋毛刷400,該傳送帶100用於傳送晶圓10,該傳送帶100順著傳送方向依次包括搬入段A、清洗段B和搬出段C(圖中未進行示意);該夾持部件200用於夾持並移動進入該清洗段B的晶圓10,該夾持部件200在第一方向Z上能夠往復運動,以夾持並移動該晶圓10至預定清洗位置,該第一方向Z垂直於該傳送帶100的承載面;該吹掃器300用於對該預定位置處的晶圓10表面吹風,該吹掃器300至少能夠在第一方向Z和/或第二方向X上往復移動,以移入或移出該晶圓10表面吹掃作業位置,該第二方向X垂直於該第一方向Z;該噴淋毛刷400用於對該預定位置處的晶圓10表面清洗,該噴淋毛刷400至少能夠在該第一方向Z和/或該第二方向X上往復移動,以移入或移出該晶圓10表裡清洗作業位置。FIG. 1 and FIG. 2 are schematic structural diagrams of wafer cleaning and drying devices provided in some embodiments of the present invention. As shown in Figures 1 and 2, in some embodiments of the present invention, the wafer cleaning and drying device includes: a
本發明實施例所提供的晶圓10清洗乾燥裝置,在對晶圓10進行清洗乾燥時,可以當晶圓10由上一道步驟(例如雙面研磨步驟)進入傳送帶100的搬入段(圖1所示),再通過該傳送帶100由搬入段A進入清洗段B(圖2所示),此時,通過該夾持部件200夾持晶圓10,並沿第一方向Z移動晶圓10,也就是,從傳送帶100的承載面上夾持上升晶圓10,使得晶圓10上升至設定好的預定清洗位置,該預定清洗位置為確保吹掃器300可順利移入晶圓10上方和/或下方的位置;如圖3所示,當晶圓10上升至該預定清洗位置之後,該吹掃器300則移入晶圓10表面吹掃作業位置,對晶圓10表面進行第一次吹掃,以充分吹掃晶圓10兩面吸附的污漬;第一次吹掃結束後,吹掃器300移開晶圓10表面吹掃作業位置,如圖5所示,噴淋毛刷400移動至晶圓10的上方和/或下方,噴淋毛刷400噴淋出清洗液對晶圓10進行清洗,清洗完成後噴淋毛刷400復位,吹掃器300再次移入至吹掃作業位置對晶圓10進行第二次吹掃,以去除晶圓10表面水漬對晶圓10進行乾燥;之後,該夾持部件200移動晶圓10下降並釋放晶圓10,晶圓10隨傳送帶100進入搬出段C,進行下一道步驟。The
本發明實施例提供的晶圓10清洗乾燥裝置,可以應用於晶圓10雙面研磨後的清洗乾燥,能夠充分、快速、高效地對晶圓10表面進行清洗乾燥,由於在晶圓10清洗之前進行了第一次吹掃以去除污漬,晶圓10清洗後進行了第二次吹掃,污漬去除充分,乾燥效果好。The
如圖1至圖8所示,在一些實施例中,該夾持部件200包括至少一個第一定位柱210和至少一個第二定位柱220,該第一定位柱210和該第二定位柱220分別設於該晶圓10相對兩側,且能夠沿該第二方向X相向運動以夾持晶圓10,或者相揹運動以釋放晶圓10;該第一定位柱210至少在朝向該第二定位柱220的一側設有用於卡住晶圓10一側邊緣的第一卡槽211,該第二定位柱220至少在朝向該第一定位柱210的一側設有用於卡住晶圓10另一側邊緣的第二卡槽。As shown in FIGS. 1 to 8 , in some embodiments, the
在上述方案中,該夾持部件200可以包括至少兩個定位柱,當需要夾持晶圓10時,第一定位柱210與第二定位柱220相向運動,以減小兩者之間的間距,而夾持晶圓10;當需要將晶圓10放置於傳送帶100上時,則控制第一定位柱210和第二定位柱220相揹運動,以增大兩者之間的間距,而釋放晶圓10。需要說明的是,上述方案中,該第一定位柱210和該第二定位柱220可以在第一方向Z上運動以升降晶圓10,同時還能沿平行於晶圓10表面的第二方向X運動以實現相向或相揹運動。In the above solution, the
此外,該第一卡槽211和該第二卡槽的結構應與晶圓10邊緣倒角結構匹配,以更好夾持晶圓10,保證晶圓10不受損傷。例如,該第一卡槽211和該第二卡槽上也設計有匹配的倒角結構,該第一卡槽211和該第二卡槽還可以為彈性可變形材料等。In addition, the structures of the
還需要說明的是,該夾持部件200也可以不限於上述採用至少兩個定位柱的方式,例如,還可以採用機械手等方式,只要能夠實現夾持並移動晶圓10目的,同時不干涉吹掃器300以及噴淋毛刷400運動即可。It should also be noted that the
此外,如圖2、圖3和圖4所示,在一些示例性的實施例中,該吹掃器300包括至少一組吹掃單元,該吹掃單元包括:吹掃風刀310及旋轉軸320,該吹掃風刀310為沿平行於晶圓10表面方向延伸的條形風刀,且沿該條形風刀的延伸方向設置有風口311,該風口311的吹風方向朝向該晶圓10表面;該旋轉軸320的軸心沿該第一方向Z設置,該旋轉軸320驅動該吹掃風刀310在平行於該晶圓10表面的方向上旋轉,以使該風口311從該晶圓10表面吹掃。In addition, as shown in Fig. 2, Fig. 3 and Fig. 4, in some exemplary embodiments, the
採用上述方案,該吹掃單元的數量可以是一個或兩個,可以根據晶圓10實際清洗需求來設置。當吹掃單元的數量為一個時,可以僅對晶圓10一側表面進行清洗,或者一側表面清洗完成之後,該吹掃單元移動至晶圓10另一側進行另一表面清洗;該吹掃單元的數量還可以有兩個,如圖所示,對晶圓10進行吹掃時,可以對晶圓10上方和下方分別移入一吹掃單元,同時對晶圓10兩面吹掃。With the above solution, the number of the purging unit can be one or two, which can be set according to the actual cleaning requirements of the
此外,上述方案中,該吹掃器300設計為吹風刀口能夠在旋轉軸320驅動下在晶圓10表面旋轉一周的方式,這樣,可以有效保證吹掃面積覆蓋整個晶圓10表面,不易留下吹掃死角,保證吹掃效果。In addition, in the above solution, the
在一些實施例中,該旋轉軸320連接於該吹掃風刀310的一端,該吹掃風刀310的風口311延伸長度大於該晶圓10的半徑,例如,該吹掃風刀310的風口311延伸長度大於晶圓10的半徑約5~10 mm,且當該吹掃器300位於該吹掃作業位置時,該旋轉軸320的軸心偏移該晶圓10的圓心,也就是說,該旋轉軸320位於晶圓10正上方偏一側的位置,這樣,可以進一步保證吹掃風刀310旋轉時吹掃面積全部覆蓋晶圓10表面。In some embodiments, the
此外,在一些實施例中,如圖4所示,該風口311的吹風方向朝向該晶圓10表面,且該風口311的吹風方向與該晶圓10表面之間呈預定夾角α。示例性的,該預定夾角α為30~45°。採用上述方案,對晶圓10表面氣流方向進行了優化設計,以保證吹掃效果最佳。In addition, in some embodiments, as shown in FIG. 4 , the blowing direction of the
此外,該吹掃風刀310的具體結構可以有多種,例如,該吹掃器300可以有三種規格,風口311分別設計為點狀(圖7中a所示)、交替弧線狀(圖7中b所示)和直線狀(圖7中c所示)。當然可以理解的是,以上僅是舉例,對於該風口311的具體結構不限於此。In addition, the specific structure of the blowing
此外,在一些實施例中,如圖5和圖6所示,該噴淋毛刷400包括毛刷基座410、設置於該毛刷基座410之上的刷毛420及噴淋頭430,該噴淋頭430位於該刷毛420的中央。該噴淋毛刷400的數量有多個,且分為至少一組毛刷組,同一組該毛刷組位於該晶圓10的同一側,且同一組該毛刷組中包括至少兩個噴淋毛刷400,同一組該毛刷組中至少兩個噴淋毛刷400清洗晶圓10時旋轉方向相反。In addition, in some embodiments, as shown in FIG. 5 and FIG. 6 , the
採用上述方案,在晶圓10表面同一側的同一組毛刷組中的噴淋毛刷400旋轉方向相反,以圖中所示方向為例,位於晶圓10上方偏左側的噴淋毛刷400沿順時針快速轉動刷洗,右側噴淋毛刷400沿逆時針快速轉動刷洗,採用這種刷洗方式便於污漬和水流快速從晶圓10表面匯出。With the above-mentioned scheme, the spraying brushes 400 in the same group of brushes on the same side of the
該毛刷組的數量可以有1個或2個,可以根據晶圓10實際清洗需求來設置。當毛刷組的數量為一個時,可以僅對晶圓10一側表面進行清洗,或者一側表面清洗完成之後,該毛刷組移動至晶圓10另一側進行另一表面清洗;該毛刷組的數量還可以有兩個,如圖5所示,對晶圓10進行清洗時,可以對晶圓10上方和下方分別移入一毛刷組,同時對晶圓10兩面清洗。The number of the brush group can be 1 or 2, which can be set according to the actual cleaning requirements of the
此外,本發明實施例還提供了一種晶圓10清洗乾燥方法,採用本發明實施例提供的晶圓10清洗乾燥裝置對晶圓10進行清洗乾燥處理,該方法包括:
步驟S01、將晶圓10從上一步驟通過該傳送帶100由該搬入段A傳送至該清洗段B;
步驟S02、通過該夾持部件200夾持,並沿第一方向Z移動該清洗段B的晶圓10,以使該晶圓10脫離該傳送帶100承載面而移動至預定清洗位置;
步驟S03、沿第一方向Z和/或第二方向X移動該吹掃器300,使該吹掃器300移入該晶圓10表面吹掃作業位置,對該晶圓10表面進行第一次吹掃;
步驟S04、第一次吹掃作業結束,將該吹掃器300移出該晶圓10表面吹掃作業位置;
步驟S05、在該第一方向Z和/或該第二方向X上移動該噴淋毛刷400,使該噴淋毛刷400移入該晶圓10表面清洗作業位置,對該晶圓10表面進行噴淋清洗;
步驟S06、噴淋清洗作業結束,將該噴淋毛刷400移出該晶圓10表面清洗作業位置;
步驟S07、沿第一方向Z和/或第二方向X移動該吹掃器300,使該吹掃器300移入該晶圓10表面吹掃作業位置,對該晶圓10表面進行第二次吹掃,以對晶圓10表面乾燥處理;
步驟S08、通過夾持部件200將乾燥處理後的晶圓10放置於該傳送帶100上,並由該傳送帶100從該清洗段B傳送至該搬出段C,以進行下一道步驟。
In addition, the embodiment of the present invention also provides a method for cleaning and drying the
本發明實施例提供的晶圓10清洗乾燥方法,在對晶圓10進行清洗乾燥時,可以先使用吹掃器300對晶圓10表面進行第一次吹掃,以將晶圓10表面吸附的污漬除掉,然後再使用噴淋毛刷400邊噴淋液體邊轉動刷洗,對晶圓10表面進行充分刷洗,之後再次使用吹掃器300對晶圓10表面進行第二次吹掃,以快速去除水漬,整套流程便捷高效,清潔乾燥效果優異。In the
此外,在一些示例性的實施例中,該方法中,採用該吹掃器300對該晶圓表面進行第一次吹掃和第二次吹掃時,該吹掃器300的旋轉軸320偏移至該晶圓的圓心一側,驅動該吹掃風刀310在平行於該晶圓10表面的方向上旋轉,以對晶圓10表面進行吹掃;其中,第一次吹掃時,吹掃氣體為溫度為15~40℃的乾燥惰性氣體;第二次吹掃時,吹掃氣體為溫度為40~45℃的乾燥惰性氣體。In addition, in some exemplary embodiments, in this method, when using the
上述方案中,第一次吹掃所採用的吹掃氣體為常溫乾燥惰性氣體,目的是去除晶圓10表面吸附的研磨殘渣;第二次吹掃氣體為40~45℃的乾燥惰性氣體,惰性氣體可選用氮氣,氬氣等,廉價易得,晶圓10在這些氣氛中不易氧化,惰性氣體溫度達到40~45 ℃,可加速晶圓10表面殘餘水分的去除與揮發,控制氣體壓強不低於40 KPa,確保氣體噴出時可形成平面狀強氣流,可充分去除晶圓10表面水漬。In the above scheme, the purge gas used for the first purge is a dry inert gas at normal temperature, the purpose is to remove the grinding residue adsorbed on the surface of the
需要說明的是,第二次吹掃時惰性氣體溫度達到40~45℃,可以是通過在吹掃器300上設置加熱器,當氣體經過與加熱器之後溫度達到40~45℃。It should be noted that when the temperature of the inert gas reaches 40-45°C during the second purge, a heater can be installed on the
此外,在一些實施例中,該方法中,對該晶圓10表面進行噴淋清洗時,具體包括:
首先,採用鹼性溶液作為清洗液進行第一次清洗,其中該鹼性溶液各組分的體積比為:濃度為10%的氫氧化銨NH
4OH:濃度為15%的過氧化氫H
2O
2:水H
2O = (1∶1∶8),清洗時間為10 ~ 15 S,清洗液的流速控制在2 ~ 3 L/min,可促使雜質氧化物等反應並溶解在鹼性清洗液中;然後,採用超純水作為清洗液進行第二次清洗,清洗時間為15 ~ 20 S,清洗液的流速控制在20~25 L/min,以保證清洗效果。
In addition, in some embodiments, in the method, when the surface of the
此外,一些實施例中,該方法中,對該晶圓10表面進行噴淋清洗時,位於該晶圓10同一側的同一組毛刷組中,至少兩個噴淋毛刷400清洗晶圓10時旋轉方向相反。以圖中所示方向為例,位於晶圓10上方偏左側的噴淋毛刷400沿順時針快速轉動刷洗,右側噴淋毛刷400沿逆時針快速轉動刷洗,採用這種刷洗方式便於污漬和水流快速從晶圓10表面匯出。In addition, in some embodiments, in this method, when the surface of the
有以下幾點需要說明: (1)本發明實施例附圖只相關連到與本發明實施例相關連到的結構,其他結構可參考通常設計; (2)為了清晰起見,在用於描述本發明的實施例的附圖中,層或區域的厚度被放大或縮小,即這些附圖並非按照實際的比例繪製。可以理解,當諸如層、膜、區域或基板之類的元件被稱作位於另一元件“上”或“下”時,所述元件可以“直接”位於另一元件“上”或“下”或者可以存在中間元件; (3)在不衝突的情況下,本發明的實施例及實施例中的特徵可以相互組合以得到新的實施例。 The following points need to be explained: (1) The drawings of the embodiment of the present invention are only related to the structure related to the embodiment of the present invention, other structures can refer to the general design; (2) For the sake of clarity, in the drawings used to describe the embodiments of the present invention, the thicknesses of layers or regions are enlarged or reduced, that is, these drawings are not drawn according to actual scale. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, that element can be "directly on" or "under" the other element. or there may be intermediate elements; (3) In the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other to obtain new embodiments.
以上僅為本發明之較佳實施例,並非用來限定本發明之實施範圍,如果不脫離本發明之精神和範圍,對本發明進行修改或者等同替換,均應涵蓋在本發明申請專利範圍的保護範圍當中。The above are only preferred embodiments of the present invention, and are not used to limit the implementation scope of the present invention. If the present invention is modified or equivalently replaced without departing from the spirit and scope of the present invention, it shall be covered by the protection of the patent scope of the present invention. in the range.
10:晶圓 100:傳送帶 200:夾持部件 210:第一定位柱 211:第一卡槽 220:第二定位柱 300:吹掃器 310:吹掃風刀 311:風口 320:旋轉軸 400:噴淋毛刷 410:毛刷基座 420:刷毛 430:噴淋頭 10:Wafer 100: Conveyor belt 200: clamping parts 210: The first positioning column 211: The first card slot 220: the second positioning column 300:Purger 310: Blowing air knife 311: tuyere 320: rotating shaft 400: spray brush 410:Brush base 420: bristles 430: sprinkler head
圖1表示本發明實施例中提供的晶圓清洗乾燥裝置的俯視圖,其中晶圓位於傳送帶的輸入段; 圖2表示本發明實施例中提供的晶圓清洗乾燥裝置的主視圖,其中晶圓進入傳送帶的清洗段; 圖3表示本發明實施例中提供的晶圓清洗乾燥裝置對晶圓進行吹掃時的主視圖; 圖4表示本發明實施例中提供的晶圓清洗乾燥裝置中吹掃器的工作過程示意圖; 圖5表示本發明實施例中提供的晶圓清洗乾燥裝置中噴淋毛刷的工作過程示意圖; 圖6表示本發明實施例中提供的晶圓清洗乾燥裝置中噴淋毛刷的結構示意圖; 圖7表示本發明實施例中提供的晶圓清洗乾燥裝置中吹掃器的三種規格風口結構示意圖; 圖8表示本發明實施例中提供的晶圓清洗乾燥裝置中夾持部件中第一定位柱的結構示意圖。 Fig. 1 shows the top view of the wafer cleaning and drying device provided in the embodiment of the present invention, wherein the wafer is located at the input section of the conveyor belt; Fig. 2 shows the front view of the wafer cleaning and drying device provided in the embodiment of the present invention, wherein the wafer enters the cleaning section of the conveyor belt; Fig. 3 shows the front view when the wafer cleaning and drying device provided in the embodiment of the present invention is purging the wafer; 4 shows a schematic diagram of the working process of the purger in the wafer cleaning and drying device provided in the embodiment of the present invention; 5 shows a schematic diagram of the working process of the spray brush in the wafer cleaning and drying device provided in the embodiment of the present invention; FIG. 6 shows a schematic structural view of the spray brush in the wafer cleaning and drying device provided in the embodiment of the present invention; FIG. 7 shows a schematic diagram of three specifications of the tuyere structure of the purger in the wafer cleaning and drying device provided in the embodiment of the present invention; FIG. 8 shows a schematic structural view of the first positioning column in the clamping part of the wafer cleaning and drying device provided in the embodiment of the present invention.
10:晶圓 10:Wafer
210:第一定位柱 210: The first positioning column
220:第二定位柱 220: the second positioning column
300:吹掃器 300:Purger
310:吹掃風刀 310: Blowing air knife
320:旋轉軸 320: rotating shaft
400:噴淋毛刷 400: spray brush
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