JP2023105856A - Substrate cleaning method, substrate cleaning apparatus, substrate cleaning member, and method for manufacturing substrate cleaning member - Google Patents

Abstract

To increase the cleaning power of substrates and to suppress a cleaning residue of microscopic sized foreign matter.SOLUTION: A substrate cleaning method according to one aspect of the present invention has a cleaning solution supply process of supplying a cleaning solution 100 to a surface of a substrate W, and a viscous bottom layer foreign matter removal process of removing foreign matter X that has entered a viscous bottom layer 101 of the cleaning solution 100 formed on the surface of the substrate W.SELECTED DRAWING: Figure 2

Description

The present invention relates to a substrate cleaning method, a substrate cleaning apparatus, a substrate cleaning member, and a method for manufacturing a substrate cleaning member.

BACKGROUND ART Conventionally, there has been known a substrate polishing apparatus that performs chemical mechanical polishing (CMP) to flatten the surface of a substrate such as a silicon wafer. This substrate polishing apparatus includes a substrate polishing apparatus that polishes a substrate, and a substrate cleaning apparatus that cleans and dries the polished substrate. Since minute particles (foreign matter) such as slurry residue and metal polishing waste used in CMP adhere to the polished substrate, the minute particles are removed by a substrate cleaning apparatus (for example, see the following patent documents: 1-3).

JP-A-2003-332290 JP-A-10-150008 JP 2018-37650 A

Due to the demand for finer wiring in the semiconductor industry in recent years, the size of abrasive grains used is becoming as small as nano-size. Along with this, the size and number of foreign substances allowed after cleaning the substrate have become stricter, and there are cases where the cleaning power of the above-described conventional methods is not necessarily sufficient.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and an object of the present invention is to enhance the ability to clean substrates and to suppress fine-sized foreign matter from remaining after cleaning.

A substrate cleaning method according to an aspect of the present invention includes a cleaning liquid supplying step of supplying a cleaning liquid to a surface of a substrate, and a viscous bottom layer foreign matter removing step of removing foreign matter having entered a viscous bottom layer of the cleaning liquid formed on the surface of the substrate. and have

In the substrate cleaning method, in the viscous bottom layer foreign matter removing step, the foreign matter may be entangled with a substrate cleaning member having a geometric structure.

In the substrate cleaning method, in the viscous bottom layer foreign matter removing step, the foreign matter may be adsorbed by a substrate cleaning member having a capillary force.

In the substrate cleaning method, in the viscous bottom layer foreign matter removing step, the foreign matter may be electrostatically adsorbed by a charged substrate cleaning member.

In the above substrate cleaning method, at least before the viscous bottom layer foreign matter removing step, the substrate cleaning member is brought into contact with the substrate or the dummy substrate while being rotated, thereby performing break-in processing of the substrate cleaning member. You may have a process.

A substrate cleaning apparatus according to an aspect of the present invention includes a cleaning liquid supply device that supplies cleaning liquid to the surface of a substrate, and a viscous bottom layer foreign matter removing device that removes foreign matter that has entered the viscous bottom layer of the cleaning liquid formed on the surface of the substrate. and have

A substrate cleaning member according to one aspect of the present invention is a substrate cleaning member having a geometric structure, and comprises a porous member having a pore diameter of 1 μm to 1 mm.

A substrate cleaning member according to an aspect of the present invention is a substrate cleaning member having a capillary force and having a capillary hole diameter of 20 μm or more.

A substrate cleaning member according to an aspect of the present invention is a substrate cleaning member having chargeability, and the surface thereof is decorated with functional groups that are positively or negatively charged.

In a method for manufacturing a substrate cleaning member according to one aspect of the present invention, the surface of a porous member is decorated with basic functional groups or acidic functional groups.

According to the above aspect of the present invention, it is possible to increase the cleaning power of a substrate and suppress minute-sized foreign matter from remaining after cleaning.

FIG. 5 is a diagram showing the relationship between the distance from the surface of the substrate and the flow velocity of the cleaning liquid; It is an explanatory view explaining a substrate cleaning method concerning a 1st embodiment. It is an explanatory view explaining a substrate cleaning method concerning a 2nd embodiment. It is explanatory drawing explaining the substrate cleaning method which concerns on 3rd Embodiment. 1 is a plan view showing the overall configuration of a substrate processing apparatus according to a first embodiment; FIG. 1 is a perspective view showing the configuration of a substrate cleaning apparatus according to a first embodiment; FIG. FIG. 4 is a cross-sectional view of a convex portion of the roll cleaning member according to the first embodiment; It is explanatory drawing explaining the manufacturing method of the roll cleaning member which concerns on 1st Example. 4 is a flow chart of a substrate cleaning method according to the first embodiment; FIG. 5 is an explanatory diagram illustrating break-in processing of the roll cleaning member according to the first embodiment; FIG. 11 is a perspective view showing the configuration of a cleaning module according to a second embodiment; FIG. 12 is a cross-sectional view of a pencil cleaning member included in the cleaning module shown in FIG. 11; FIG. 11 is a cross-sectional view of a convex portion of a roll cleaning member according to a third embodiment; It is a flowchart which shows the manufacturing method of the roll cleaning member which concerns on 3rd Example. FIG. 10 is a plan view showing the configuration of a cleaning module according to a modified example; It is a side view which shows the structure of the substrate processing apparatus which concerns on a modification. FIG. 17 is a cross-sectional view showing a tape cartridge provided in the scrubber shown in FIG. 16;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Hereinafter, the outline of the present invention will be described first, and then the embodiments of the present invention and examples of the present invention will be described.

(overview)
FIG. 1 is a diagram showing the relationship between the distance from the surface of the substrate and the flow velocity of the cleaning liquid. Note that the flow velocity distribution of the cleaning liquid shown in FIG. 1 is a calculation example.
FIG. 1 shows a cleaning liquid supply step (rinsing step) in which a cleaning liquid 100 such as a rinse liquid is supplied to the surface of a substrate W such as a silicon wafer to wash away foreign matter X. As shown in FIG. As shown in FIG. 1, near the surface of the substrate W, a viscous sublayer 101 of cleaning liquid 100 is formed.

The viscous bottom layer 101 is a layer in which the viscous effect very close to the wall of the turbulent flow along the wall (surface of the substrate W) is important. It has about 5 to 11 times the thickness. Note that the average velocity distribution of the viscous bottom layer 101 is linear and has little disturbance, but is not zero.

In the example shown in FIG. 1, the cleaning liquid layer up to 10 μm from the surface of the substrate W is the viscous bottom layer 101 . In the viscous bottom layer 101 , the flow rate of the cleaning liquid decreases, making it difficult to remove the foreign matter X that has entered the viscous bottom layer 101 . However, a micro-sized (for example, 10 μm or less) foreign matter X easily enters the viscous bottom layer 101 .

Among the viscous bottom layers 101, particularly in the viscous bottom layers 101a formed in the range of 100 nm or less from the surface of the substrate W, the flow velocity of the cleaning liquid 100 is significantly reduced. In this viscous bottom layer 101a, it takes approximately 5 to 15 minutes to discharge the foreign matter X with a normal supply rate of the cleaning liquid 100 (for example, 1 L/min). As a result, it is difficult to remove the foreign matter X within the normal cleaning process time only with the flow of the cleaning liquid 100, and the chances of the foreign matter X reattaching increase.

Therefore, it is necessary to rescue and discharge the foreign matter X of 10 μm or less that has entered the viscous bottom layer 101 where the flow velocity of the cleaning liquid 100 decreases, and the foreign matter X of 100 nm or less that has entered the viscous bottom layer 101a where the flow velocity of the cleaning liquid 100 significantly decreases. .
The present invention has a viscous bottom layer foreign matter removing step for removing foreign matter X that has entered the viscous bottom layer 101 (101a), as will be described later in the embodiments and examples. As a result, the ability to clean the substrate W is enhanced, and minute-sized foreign matter X is suppressed from being left uncleaned.

In each embodiment shown in FIGS. 2 to 4, which will be described below, a function is added to the substrate cleaning member 200 to remove the foreign matter X that has entered the viscous bottom layer 101 of the cleaning liquid 100. FIG.

(First embodiment)
FIG. 2 is an explanatory diagram for explaining the substrate cleaning method according to the first embodiment. 2(a) to 2(c) schematically show the functional action of the substrate cleaning member 200 according to the first embodiment.
As shown in FIG. 2, the first embodiment adds a geometric structure to the substrate cleaning member 200 . A substrate cleaning member 200A having a geometric structure has a large number of minute projections 201 on its surface in the example shown in FIG.

In the substrate cleaning method of the first embodiment, the substrate cleaning member 200A having a geometric structure catches the foreign matter X. For example, a substrate cleaning member 200A made of resin particles (for example, dedicated particles having a particle diameter of more than 10 μm) having minute projections 201 on the surface is dispersed in the cleaning liquid 100, and the substrate W is supplied with the cleaning liquid 100. The surface of the substrate W is scrub-cleaned with a roll cleaning member or the like. As a result, foreign matter X that has entered the viscous bottom layer 101 of the cleaning liquid 100 can be caught by the protrusions 201 of the substrate cleaning member 200A and removed.
Note that the geometric structure described above may be added to a roll cleaning member, a pencil cleaning member, or other substrate cleaning members as in the embodiments described later.

(Second embodiment)
FIG. 3 is an explanatory diagram for explaining the substrate cleaning method according to the second embodiment. 3(a) to 3(c) schematically show the functional action of the substrate cleaning member 200 according to the second embodiment.
As shown in FIG. 3, in the second embodiment, capillary force is added to the substrate cleaning member 200 . In the example shown in FIG. 3, the substrate cleaning member 200B having capillary force has a large number of capillary holes 202 open on the surface.

The substrate cleaning method of the second embodiment is characterized in that the foreign matter X is adsorbed by the substrate cleaning member 200B having capillary force. For example, the substrate cleaning member 200B made of porous particles (for example, dedicated particles having a particle diameter of more than 10 μm) is dispersed in the cleaning liquid 100, and while the cleaning liquid 100 is supplied to the substrate W, the substrate W is cleaned by a conventional roll cleaning member or the like. Scrub the surface of the As a result, the foreign matter X that has entered the viscous bottom layer 101 of the cleaning liquid 100 can be removed by being adsorbed to the capillary holes 202 or the like.
By making the substrate cleaning member 200B of a material that can be elastically contracted (such as a sponge body), the substrate cleaning member 200B is compressed by the supply pressure of the cleaning liquid 100 (which may be applied with ultrasonic waves) or the pressing force of the roll cleaning member. By elastically contracting and then restoring deformation (expansion), the foreign matter X can be more easily adsorbed.
Incidentally, the above-described capillary force may be added to a roll cleaning member, a pencil cleaning member, or other substrate cleaning members as in the embodiments described later.

(Third Embodiment)
FIG. 4 is an explanatory diagram for explaining the substrate cleaning method according to the third embodiment. 4(a) to 4(c) schematically show the functional action of the substrate cleaning member 200 according to the third embodiment.
As shown in FIG. 4, in the third embodiment, the substrate cleaning member 200 is added with chargeability. In the example shown in FIG. 4, the surface of the substrate cleaning member 200C having chargeability is decorated with a functional group 203 that imparts chargeability.

The substrate cleaning method of the third embodiment is characterized by electrostatically attracting foreign matter X with a charged substrate cleaning member 200C. For example, the substrate cleaning member 200C in the form of negatively charged particles (for example, dedicated particles with a particle diameter of more than 10 μm) is dispersed in the cleaning liquid 100, and while the cleaning liquid 100 is supplied to the substrate W, a conventional roll cleaning member or the like is used. The surface of the substrate W is scrub-cleaned. As a result, the foreign matter X that has entered the viscous bottom layer 101 of the cleaning liquid 100 is electrostatically attracted to the functional group 203 or the like. Then, the roll cleaning member or the like that has been scrub-cleaned is moved to a retracted position away from the substrate, and an appropriate chemical solution is supplied to the roll cleaning member or the like. In this manner, the foreign matter X adhering to the surface of the substrate W can be properly removed.
In one embodiment, when the chemical solution is supplied to the roll cleaning member or the like, the chemical solution is adjusted in advance so that the zeta potential of the foreign matter X repels the cleaning member, thereby removing the foreign matter X from the roll cleaning member or the like. It should be easy to remove. That is, the zeta potential of foreign matter X is measured by chemical solutions (for example, APM (ammonia-hydrogen peroxide mixture), SPM (sulfuric-acid and hydrogen-peroxide mixture), HPM (hydrochloric acid-hydrogen peroxide mixture), DHF (dolute hydrogen fluoride), Ammonium hydroxide, ammonia peroxide, TMAH (Tetramethylammonium hydroxide), amines, oxalic acid, citric acid, surfactants, cathode water, anode water, hydrogen water, carbon dioxide water, etc.) Alternatively, it can be made easier to be attracted to the negatively charged substrate cleaning member 200C.
Incidentally, the chargeability described above may be added to a roll cleaning member, a pencil cleaning member, or other substrate cleaning members, as in Examples described later.

(First embodiment)
Next, an example (first example) of the first embodiment described above will be described. A substrate processing apparatus 1 that performs CMP processing on a substrate W will be described below as an example.

FIG. 5 is a plan view showing the overall configuration of the substrate processing apparatus 1 according to the first embodiment.
A substrate processing apparatus 1 shown in FIG. 5 is a chemical mechanical polishing (CMP) apparatus for polishing the surface of a substrate W (workpiece) such as a silicon wafer to a flat surface. This substrate processing apparatus 1 includes a rectangular box-shaped housing 2 . The housing 2 is formed in a substantially rectangular shape in plan view.

Substrates W to be processed include semiconductor wafers, glass substrates (for liquid crystal displays and plasma displays), optical disk substrates, magneto-optical disk substrates, magnetic disk substrates, printed wiring boards, and memory circuit substrates. , logic circuit substrates and image sensor substrates (for example, CMOS sensor substrates). Moreover, the shape is not limited to a circular shape, and may be, for example, a rectangular shape. In addition, the size of the semiconductor wafer in the case of a circle includes, for example, wafers with diameters of 100 mm, 150 mm, 200 mm, 300 mm and 450 mm.

The housing 2 has a longitudinally extending substrate transport path 3 in its center. A loading/unloading section 10 is provided at one end of the substrate transport path 3 in the longitudinal direction. A polishing section 20 is arranged on one side of the substrate transport path 3 in the width direction (a direction perpendicular to the longitudinal direction in plan view), and a cleaning section 30 is arranged on the other side. A transport section 40 for transporting the substrate W is provided in the substrate transport path 3 . The substrate processing apparatus 1 also includes a control unit 50 (control panel) that controls the operations of the loading/unloading unit 10 , the polishing unit 20 , the cleaning unit 30 , and the transfer unit 40 .

The loading/unloading section 10 includes a front loading section 11 in which substrates W are accommodated. A plurality of front load portions 11 are provided on one side surface of the housing 2 in the longitudinal direction. A plurality of front loading portions 11 are arranged in the width direction of the housing 2 . The front loading unit 11 is loaded with, for example, an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). The SMIF and FOUP are sealed containers that contain cassettes of substrates W inside and are covered with partition walls, and can maintain an environment independent of the external space.

In addition, the loading/unloading section 10 includes two transport robots 12 for loading and unloading substrates W from the front loading section 11, and a traveling mechanism 13 for running each of the transport robots 12 along the front loading section 11. . Each transport robot 12 has two upper and lower hands, which are used before and after the substrate W is processed. For example, when returning the substrate W to the front loading section 11, the upper hand is used, and when taking out the substrate W before processing from the front loading section 11, the lower hand is used.

The polishing section 20 includes a plurality of substrate polishing apparatuses 21 (21A, 21B, 21C, 21D) that polish (flatten) the substrate W. As shown in FIG. A plurality of substrate polishing apparatuses 21 are arranged in the longitudinal direction of the substrate transport path 3 . A substrate polishing apparatus 21 includes a polishing table 23 for rotating a polishing pad 22 having a polishing surface, and a top ring 24 for holding a substrate W and polishing the substrate W while pressing it against the polishing pad 22 on the polishing table 23 . , a polishing liquid supply nozzle 25 for supplying a polishing liquid or a dressing liquid (for example, pure water) to the polishing pad 22, a dresser 26 for dressing the polishing surface of the polishing pad 22, and a liquid (for example, pure water). and an atomizer 27 for spraying a mixed fluid of gas (eg, nitrogen gas) or liquid (eg, pure water) in the form of a mist onto the polishing surface.

In the substrate polishing apparatus 21, the top ring 24 presses the substrate W against the polishing pad 22 while supplying the polishing liquid onto the polishing pad 22 from the polishing liquid supply nozzle 25, and the top ring 24 and the polishing table 23 are relatively moved. Thereby, the substrate W is polished to flatten its surface. The dresser 26 has hard particles, such as diamond particles and ceramic particles, fixed to a rotating portion at the tip that contacts the polishing pad 22. By rotating and swinging the rotating portion, the entire polishing surface of the polishing pad 22 is covered. Dress evenly to form a flat polished surface. The atomizer 27 cleans the polishing surface by washing away polishing debris, abrasive grains, etc. remaining on the polishing surface of the polishing pad 22 with a high-pressure fluid, and performs dressing of the polishing surface by the dresser 26, which is in mechanical contact, that is, polishing. achieve surface regeneration.

The cleaning unit 30 includes a plurality of substrate cleaning devices 31 (31A, 31B) that clean the substrates W, and a substrate drying device 32 that dries the cleaned substrates W. As shown in FIG. A plurality of substrate cleaning devices 31 and substrate drying devices 32 are arranged in the longitudinal direction of the substrate transfer path 3 . A first transfer chamber 33 is provided between the substrate cleaning device 31A and the substrate cleaning device 31B. The first transfer chamber 33 is provided with a transfer robot 35 that transfers the substrate W between the transfer section 40, the substrate cleaning device 31A, and the substrate cleaning device 31B. A second transfer chamber 34 is provided between the substrate cleaning device 31B and the substrate drying device 32 . In the second transfer chamber 34, a transfer robot 36 that transfers the substrate W between the substrate cleaning device 31B and the substrate drying device 32 is provided.

The substrate cleaning apparatus 31A includes, for example, a module (hereinafter referred to as a roll-type cleaning module) having a roll-type substrate cleaning member (the surface of which is made of PVA (polyvinyl alcohol) sponge or urethane sponge), and the substrate W is washed in the first order. wash. The substrate cleaning apparatus 31B also includes a roll-type cleaning module and performs secondary cleaning of the substrate W. As shown in FIG. The substrate cleaning apparatus 31A and the substrate cleaning apparatus 31B may be of the same type or different types of cleaning modules. It may be a cleaning module or the like equipped with a two-fluid jet type two-fluid jet nozzle for ejecting the .

The substrate drying device 32 includes, for example, a drying module that performs Rotagoni drying (IPA (Iso-Propyl Alcohol) drying). After drying, the shutter 1a provided on the partition wall between the substrate drying device 32 and the loading/unloading section 10 is opened, and the substrate W is taken out from the substrate drying device 32 by the transfer robot 12. FIG.

Note that "cleaning" includes not only normal cleaning using liquids such as chemicals and pure water (referred to as wet cleaning in this embodiment), but also cleaning that does not use liquid during cleaning (referred to as dry cleaning). I'm in. That is, one of the substrate cleaning device 31A and the substrate cleaning device 31B may be a wet cleaning section and the other may be a dry cleaning section. In addition, in order to dry the substrate W when wet cleaning is performed before dry cleaning, the substrate drying device 32 described above may be arranged.

The transport section 40 includes a lifter 41 , a first linear transporter 42 , a second linear transporter 43 and a swing transporter 44 . The substrate transport path 3 has a first transport position TP1, a second transport position TP2, a third transport position TP3, a fourth transport position TP4, a fifth transport position TP5, and a sixth transport position in order from the load/unload section 10 side. A position TP6 and a seventh transport position TP7 are set.

The lifter 41 is a mechanism for vertically transporting the substrate W at the first transport position TP1. The lifter 41 receives the substrate W from the transport robot 12 of the loading/unloading section 10 at the first transport position TP1. Also, the lifter 41 transfers the substrate W received from the transport robot 12 to the first linear transporter 42 . A partition wall between the first transfer position TP1 and the load/unload section 10 is provided with a shutter 1b. Passed.

The first linear transporter 42 is a mechanism that transports the substrate W between the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4. The first linear transporter 42 includes a plurality of transport hands 45 (45A, 45B, 45C, 45D) and a linear guide mechanism 46 that horizontally moves each transport hand 45 at a plurality of heights.
The transport hand 45A is moved by the linear guide mechanism 46 between the first transport position TP1 and the fourth transport position TP4. The transport hand 45A is a pass hand for receiving the substrate W from the lifter 41 and transferring it to the second linear transporter 43. As shown in FIG.

The transport hand 45B is moved by the linear guide mechanism 46 between the first transport position TP1 and the second transport position TP2. The transport hand 45B receives the substrate W from the lifter 41 at the first transport position TP1, and transfers the substrate W to the substrate polishing apparatus 21A at the second transport position TP2. The transport hand 45B is provided with an elevation driving unit, and is raised when the substrate W is transferred to the top ring 24 of the substrate polishing apparatus 21A, and is lowered after the substrate W is transferred to the top ring 24. The transport hand 45C and the transport hand 45D are also provided with similar up-and-down driving units.

The transport hand 45</b>C is moved between the first transport position TP<b>1 and the third transport position TP<b>3 by the linear guide mechanism 46 . The transport hand 45C receives the substrate W from the lifter 41 at the first transport position TP1, and transfers the substrate W to the substrate polishing apparatus 21B at the third transport position TP3. The transfer hand 45C also functions as an access hand that receives the substrate W from the top ring 24 of the substrate polishing apparatus 21A at the second transfer position TP2 and transfers the substrate W to the substrate polishing apparatus 21B at the third transfer position TP3.

The transport hand 45D is moved by the linear guide mechanism 46 between the second transport position TP2 and the fourth transport position TP4. The transport hand 45D receives the substrate W from the top ring 24 of the substrate polishing apparatus 21A or 21B at the second transport position TP2 or the third transport position TP3, and transfers the substrate W to the swing transporter 44 at the fourth transport position TP4. Acts as an access hand for passing

The swing transporter 44 has a hand that can move between the fourth transport position TP4 and the fifth transport position TP5, and transfers the substrate W from the first linear transporter 42 to the second linear transporter 43. . Also, the swing transporter 44 transfers the substrate W polished by the polishing section 20 to the cleaning section 30 . A temporary placement table 47 for the substrate W is provided on the side of the swing transporter 44 . The swing transporter 44 inverts the substrate W received at the fourth transport position TP4 or the fifth transport position TP5 and places it on the temporary placement table 47 . The substrate W placed on the temporary placement table 47 is transferred to the first transfer chamber 33 by the transfer robot 35 of the cleaning section 30 .

The second linear transporter 43 is a mechanism that transports the substrate W between the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7. The second linear transporter 43 includes a plurality of transport hands 48 (48A, 48B, 48C) and a linear guide mechanism 49 that horizontally moves each transport hand 45 at a plurality of heights. The transport hand 48A is moved by the linear guide mechanism 49 between the fifth transport position TP5 and the sixth transport position TP6. The transport hand 45A functions as an access hand that receives the substrate W from the swing transporter 44 and transfers it to the substrate polishing apparatus 21C.

The transport hand 48B moves between the sixth transport position TP6 and the seventh transport position TP7. The transport hand 48B functions as an access hand for receiving the substrate W from the substrate polishing apparatus 21C and transferring it to the substrate polishing apparatus 21D. The transport hand 48C moves between the seventh transport position TP7 and the fifth transport position TP5. The transport hand 48C receives the substrate W from the top ring 24 of the substrate polishing apparatus 21C or 21D at the sixth transport position TP6 or the seventh transport position TP7, and transfers the substrate W to the swing transporter 44 at the fifth transport position TP5. Acts as an access hand for passing Although the description is omitted, the operation of the transport hand 48 when transferring the substrate W is the same as the operation of the first linear transporter 42 described above.

FIG. 6 is a perspective view showing the configuration of the substrate cleaning apparatus 31 according to the first embodiment.
The substrate cleaning apparatus 31 includes, for example, a cleaning module 60 (viscous bottom layer contaminant removing apparatus) as shown in FIG. The cleaning module 60 includes a rotation mechanism 80 that rotates the substrate W, and a roll cleaning member 81 (the substrate cleaning member 200A having a geometrical structure) that rotates with the peripheral surface of the substrate W in contact with the substrate W. The rotation mechanism 80 includes a plurality of holding rollers 80a that hold the outer circumference of the substrate W and rotate around an axis extending in the vertical direction. The plurality of holding rollers 80a are connected to an electric driving unit such as a motor to horizontally rotate. Further, the plurality of holding rollers 80a are configured to be vertically movable by an air drive unit such as an air cylinder.

A plurality of protrusions 82 a are formed on the peripheral surface of the roll cleaning member 81 . The roll cleaning member 81 includes an upper roll cleaning member 81a that contacts the upper surface W1 (polishing surface) of the substrate W, and a lower roll cleaning member 81b that contacts the lower surface W2 of the substrate W. The upper roll cleaning member 81a and the lower roll cleaning member 81b are connected to an electric drive section such as a motor to rotate. Also, the upper roll cleaning member 81a is configured to be vertically movable by an air drive unit (actuator) such as an air cylinder. The lower roll cleaning member 81b is held at a constant height.

When setting the substrate W, first, the upper roll cleaning member 81a and the plurality of holding rollers 80a are raised. Next, the substrate W is held in a horizontal position by the raised holding rollers 80a, and then lowered until the lower surface W2 of the substrate W comes into contact with the lower roll cleaning member 81b.
Finally, the upper roll cleaning member 81a is lowered and brought into contact with the upper surface W1 of the substrate W. As shown in FIG.

After the substrate W is set in this manner, the pair of roll cleaning members 81 are rotated while the substrate W is rotated by the holding rollers 80a, thereby removing foreign matter (fine particles) adhering to the upper surface W1 and the lower surface W2 of the substrate W. do. In the case of wet cleaning, a cleaning liquid 100 such as a chemical solution and/or pure water is supplied from a nozzle (cleaning liquid supply device) (not shown) toward the upper surface W1 of the substrate W, and the substrate W is scrubbed with a pair of roll cleaning members 81. wash.

FIG. 7 is a cross-sectional view of the convex portion 82a of the roll cleaning member 81 according to the first embodiment. Note that FIG. 7 includes an enlarged view of the region A at the tip of the projection 82a.
A roll cleaning member 81 shown in FIG. 7 includes an elastic support 81A and a surface layer 81B formed on the surface of the elastic support 81A. The elastic support 81A is formed in a roll shape (cylindrical shape). As the material of the elastic support 81A, for example, an elastic body such as porous PVA sponge, urethane foam, rubber or elastomer can be used.

Surface layer 81B is formed with a geometric structure including a plurality of protrusions 201 and a plurality of grooves 201a recessed relative to protrusions 201 . The surface layer 81B is, for example, a coating layer (resin layer) that covers the surface of the elastic support 81A. The surface layer 81B may be a fiber coating that covers the surface of the elastic support 81A. Also, the surface layer 81B may be formed integrally with the elastic support 81A and may be made of the same material (porous member, etc.) as the elastic support 81A. In this case, the pore diameter of the elastic support 81A (surface layer 81B) is preferably in the range of 1 μm to 1 mm.

8A and 8B are explanatory diagrams for explaining the manufacturing method of the roll cleaning member 81 according to the first embodiment.
The above-described geometric structure of the roll cleaning member 81 can be formed, for example, by pressing a mold 300 against the surface layer 81B of the roll cleaning member 81 and then removing it, as shown in FIG. 8(a).

The mold 300 is provided with a plurality of protrusions 301 projecting toward the surface layer 81B and grooves 301a recessed relative to the protrusions 301 . By pressing this mold 300 against the surface layer 81B, protrusions 201 and grooves 201a can be formed on the surface layer 81B side, as shown in FIG. 8B.

FIG. 9 is a flow chart of the substrate cleaning method according to the first embodiment.
Before bringing the roll cleaning member 81 manufactured as described above into the substrate cleaning process, dust and the like on the roll cleaning member 81 are removed in advance by a break-in process (step S1). The break-in process (leveling process) refers to conditioning the contact portion such as the surface of the roll cleaning member 81 for cleaning the substrate W, which is in contact with the substrate W, before being used for the cleaning process of the substrate W. .

The break-in process is performed in order to start the cleaning process of the substrate W with the surface condition of the surface of the roll cleaning member 81 in a so-called “smoothed” condition, such as preliminarily homogenizing the physical unevenness of the surface. Further, the contact portion of the roll cleaning member 81 that cleans the substrate W may be made of a porous member. In such a case, for example, foreign matter may adhere to the pores of the porous member of the roll cleaning member 81 in the process of manufacturing the roll cleaning member 81, but removing such foreign matter in advance is also a breakthrough. This is one of the reasons for performing in-processing.

FIG. 10 is an explanatory diagram illustrating the break-in process of the roll cleaning member 81 according to the first embodiment.
As shown in FIG. 10, in the break-in process of the roll cleaning member 81, the roll cleaning member 81 is brought into contact with the substrate W or the dummy substrate while being rotated, thereby breaking the roll cleaning member 81 (break-in). process). When using a dummy substrate, it is preferable that the dummy substrate has the same thickness and the same size in the plane direction as the substrate W to be cleaned by the substrate cleaning apparatus 31, and is made of the same material as the substrate W. is more preferred. However, unlike the substrate W, the dummy substrate may not be subjected to patterning or the like. Alternatively, a cleaning plate or a vibration plate may be used as the dummy substrate.

The break-in process is performed while supplying the cleaning liquid 100 from the nozzle 83 (cleaning liquid supply device) to the substrate W or the dummy substrate. The cleaning liquid 100 supplied from the nozzle 83 may be a rinse liquid or a chemical liquid. The pushing amount of the roll cleaning member 81 with respect to the substrate W or the dummy substrate may be set in advance. ), the roll cleaning member 81 may be pushed into the substrate W or the dummy substrate by the same amount.

In order to measure the pushing amount, the load of the roll cleaning member 81 on the substrate W or the dummy substrate may be measured. may be added to the dummy substrate during the break-in process. As an example, the roll cleaning member 81 may change the load on the substrate W or the dummy substrate within a range of 0 to 10N. Further, the generation of dust from the roll cleaning member 81 may be accelerated by applying ultrasonic waves to the substrate W or the dummy substrate.

After the roll cleaning member 81 is subjected to the break-in process as described above, the roll cleaning member 81 is brought into the substrate cleaning process (step S2). In the substrate cleaning process, while supplying the cleaning liquid 100 from the nozzle 83 to the surface of the substrate W (cleaning liquid supply step), the roll cleaning member 81 is rotated and pressed against the substrate W to perform scrub cleaning. Here, the foreign matter X entering the viscous bottom layer 101 of the cleaning liquid 100 formed on the surface of the substrate W is removed by the roll cleaning member 81 having the geometric structure shown in FIG. 7 (the geometric structure of the substrate cleaning member 200A). It is entangled and removed from the viscous bottom layer 101 (viscous bottom layer foreign matter removing step).

(Second embodiment)
Next, an example (second example) of the above-described second embodiment will be described. In the following description, the same or equivalent configurations as those of the above-described embodiments and examples are denoted by the same reference numerals, and their descriptions are simplified or omitted.

FIG. 11 is a perspective view showing the configuration of the cleaning module 60 according to the second embodiment.
The cleaning module 60, as shown in FIG. 11, includes a pencil cleaning member 92 (substrate cleaning member 200B having capillary force). The cleaning module 60 includes a rotation mechanism 90 that rotates the substrate W, and a pencil cleaning mechanism 91 (actuator) that rotates the substrate W while bringing a pencil cleaning member 92 into contact therewith. The rotation mechanism 90 includes a plurality of chucks 90a1 that hold the outer periphery of the substrate W, and a rotation stage 90a that rotates the substrate W around an axis extending in the vertical direction. The rotating stage 90a is connected to an electric driving unit such as a motor on the lower surface W2 side of the substrate W and rotates horizontally.

The pencil cleaning mechanism 91 includes a pencil cleaning member 92 and an arm 91 b holding the pencil cleaning member 92 . The pencil cleaning member 92 has a contact portion 93 that contacts the substrate W, and a mounting portion 94 that is connected to the contact portion 93 and mounted on the tip of the arm 91b. The contact portion 93 is preferably a cylindrical elastic support such as a PVA (polyvinyl alcohol) sponge or a urethane sponge. The pencil cleaning member 92 is rotated about an axis extending in the vertical direction by an electric drive unit such as a motor arranged inside the arm 91b.

The arm 91b is arranged above the substrate W. As shown in FIG. A swivel shaft 91c is connected to the base end of the arm 91b. An electric drive unit such as a motor for turning the arm 91b is connected to the turning shaft 91c. The arm 91b rotates within a plane parallel to the substrate W around a rotation shaft 91c. That is, the rotation of the arm 91b moves the pencil cleaning member 92 supported by the arm 91b in the radial direction of the substrate W to clean the upper surface W1 of the substrate W. As shown in FIG. As a result, the nano-level foreign matter adhering to the upper surface W1 of the substrate W can be effectively removed.

FIG. 12 is a cross-sectional view of the pencil cleaning member 92 included in the cleaning module 60 shown in FIG. 12 includes an enlarged view of area B near contact surface 92a of pencil cleaning member 92. FIG.
As shown in FIG. 12, the pencil cleaning member 92 has a contact portion 93 that contacts the substrate W when cleaning the substrate W, and has a large number of capillary holes 202 on the contact surface 92a with the substrate W. In addition, at least a portion of the peripheral edge surface (peripheral surface) of the contact portion 93 other than the contact surface 92 a is covered with the skin layer 95 . The skin layer 95 shown in FIG. 12 covers the peripheral surface of the contact portion 93 from the proximal side opposite to the contact surface 92a to the middle of the distal end side, and also covers the peripheral surface of the mounting portion 94 on the proximal side. .

According to the above configuration, it is possible to prevent nano-level foreign matter X (microparticles) captured inside the pencil cleaning member 92 by the capillary hole 202 from adhering to the substrate W again. That is, since the peripheral surface of the contact portion 93 is covered with the skin layer 95, the cleaning liquid that has collided with the peripheral surface of the contact portion 93 does not enter the contact portion 93, making it difficult to discharge the captured microparticles. can prevent redeposition to In addition, the skin layer 95 can also prevent particles contained in the cleaning liquid from entering inside from the peripheral surface of the contact portion 93 . Therefore, it is possible to perform cleaning while effectively preventing pattern collapse on the substrate W during cleaning and drying.

The skin layer 95 described above can be provided not only on the pencil cleaning member 92 but also on the roll cleaning member 81 described above. For example, if the skin layer 95 described above is provided on a surface other than the tip surface of the convex portion 82a of the roll cleaning member 81 shown in FIG. 6, the same effects as those described above can be obtained.

The size of the contact surface 92a of the pencil cleaning member 92 may be about φ50 to φ300 mm. Moreover, the diameter of the capillary hole 202 of the pencil cleaning member 92 is preferably 20 μm or more. In addition, ultrasonic waves may be applied as a method of applying stretchability and force necessary for exhibiting the capillary function of the pencil cleaning member 92 . This ultrasonic wave is preferably in the range of 28 kHz to 5 MHz. Also, the ultrasonic waves may be applied to the cleaning liquid 100 (rinse liquid or the like), or the pencil cleaning member 92 may be brought into contact with a vibrating plate or the like to be vibrated. Further, the pencil cleaning member 92 may change the load on the substrate W within a range of 0 to 10N.

Before bringing the manufactured pencil cleaning member 92 into the substrate cleaning process, dust and the like of the pencil cleaning member 92 are removed in advance by the break-in process as in the above-described embodiment. After the pencil cleaning member 92 is broken-in, the pencil cleaning member 92 is brought into the substrate cleaning process. In the substrate cleaning process, while supplying the cleaning liquid 100 from the nozzle 83 to the surface of the substrate W (cleaning liquid supply step), the pencil cleaning member 92 is rotated and pressed against the substrate W to perform scrub cleaning. Here, the foreign matter X that has entered the viscous bottom layer 101 of the cleaning liquid 100 formed on the surface of the substrate W is adsorbed by the pencil cleaning member 92 (capillary force of the substrate cleaning member 200B) and removed from the viscous bottom layer 101 (viscous bottom layer foreign matter removal step).

(Third embodiment)
Next, an example (third example) of the above-described third embodiment will be described. In the following description, the same or equivalent configurations as those of the above-described embodiments and examples are denoted by the same reference numerals, and their descriptions are simplified or omitted.

FIG. 13 is a cross-sectional view of the convex portion 82a of the roll cleaning member 81 according to the third embodiment. Note that FIG. 13 includes an enlarged view of the region C at the tip of the projection 82a.
A roll cleaning member 81 shown in FIG. 13 includes an elastic support 81A and a surface layer 81B formed on the surface of the elastic support 81A, as in the first embodiment. The elastic support 81A is formed in a roll shape (cylindrical shape). As the material of the elastic support 81A, for example, an elastic body such as porous PVA sponge, urethane foam, rubber or elastomer can be used. The surface layer 81B is decorated with positively or negatively charged functional groups 203 . For example, functional groups include basic functional groups such as amino groups.

FIG. 14 is a flow chart showing a method of manufacturing the roll cleaning member 81 according to the third embodiment.
The roll cleaning member 81 (charging substrate cleaning member 200C) is manufactured through, for example, silane coupling treatment (step S11), polyethyleneimine polymer adsorption (step S12), and graft polymerization (step S13).

For example, when the elastic support 81A (porous member) is made of an inorganic material or the like, a silane coupling process is performed to facilitate the adsorption of polyethyleneimine macromolecules (organic materials). Polyethylenimine (PEI), which is an amino group-containing polymer, can be bound to the roll cleaning member 81 so as to have the ability to adsorb metal ions. In addition, when the elastic support 81A is made of an organic material, the silane coupling treatment is not necessarily required.

If the roll cleaning member 81 is decorated with basic functional groups, it can be positively charged. In addition, when the roll cleaning member 81 is decorated with an acidic functional group such as a sulfuric acid group, a sulfonic acid group, a carboxyl group, a phosphoric acid group, or a phenolic hydroxyl group, it can be negatively charged. For example, carboxyl groups may be formed on the surface of the roll cleaning member 81 by oxidation of hydroxyl groups (TEMPO oxidation or the like).
In addition, a surface-decorating agent may be applied to the mold for manufacturing the PVA sponge (elastic support 81A).

Before carrying the manufactured roll cleaning member 81 to the substrate cleaning process, dust and the like on the roll cleaning member 81 are removed in advance by the break-in process as in the above-described embodiment. After the roll cleaning member 81 is subjected to the break-in process, the roll cleaning member 81 is brought into the substrate cleaning process. In the substrate cleaning process, while supplying the cleaning liquid 100 from the nozzle 83 to the surface of the substrate W (cleaning liquid supply step), the roll cleaning member 81 is rotated and pressed against the substrate W to perform scrub cleaning. Here, foreign matter X that has entered the viscous bottom layer 101 of the cleaning liquid 100 formed on the surface of the substrate W is adsorbed by the roll cleaning member 81 (charging property of the substrate cleaning member 200) and removed from the viscous bottom layer 101 (viscous bottom layer foreign matter removal step).

The roll cleaning member 81 may be decorated with a basic functional group and an acidic functional group so that one roll cleaning member 81 has positive and negative chargeability. In this case, when fabricating the positively charged regions, the regions intended to be negatively charged are masked (capped) in advance before fabricating the positively charged regions. The positively charged areas are then washed and the positively charged areas are masked (capped) to produce the negatively charged areas. By following this procedure, it is possible to produce two areas in the same roll cleaning member 81, a positively charged area and a negatively charged area.

Alternatively, the substrate W may be cleaned using two roll cleaning members 81, one positively charged roll cleaning member 81 and one negatively charged roll cleaning member 81. FIG. Further, similarly to the third embodiment described above, the zeta potential of the foreign matter X is determined by the chemical solution (for example, APM (ammonia-hydrogen peroxide mixture), SPM (sulfuric-acid and hydrogen-peroxide mixture), HPM (hydrochloric acid-hydrogen peroxide mixture), DHF (dolute hydrogen fluoride), ammonium hydroxide, ammonia peroxide, TMAH (Tetramethylammonium hydroxide), amine, oxalic acid, citric acid, surfactant, cathode water, anode water, hydrogen water, carbon dioxide water), etc. You can control it with
Further, after cleaning the substrate, a step may be added to remove the foreign matter X adhering to the roll cleaning member 81 due to the cleaning of the substrate. For example, the roll cleaning member 81 is moved to a retracted position from above the substrate W, and chemical liquid is supplied to adjust the zeta potential of the foreign matter X to repel the roll cleaning member 81 . Foreign matter X adhering to the roll cleaning member 81 may be removed by this electrostatic repulsion.

While the preferred embodiments of the invention have been described and described, it is to be understood that they are illustrative of the invention and should not be considered limiting. Additions, omissions, substitutions, and other modifications may be made without departing from the scope of the invention. Accordingly, the invention should not be viewed as limited by the foregoing description, but rather by the claims appended hereto.

For example, the following modifications may be adopted.

FIG. 15 is a plan view showing the configuration of a cleaning module 60 according to one modification.
The cleaning module 60, as shown in FIG. 15, includes a bevel cleaning member 111 (substrate cleaning member 200). The cleaning module 60 includes a rotation mechanism (not shown) that rotates the substrate W, and a bevel cleaning mechanism 110 that rotates the bevel cleaning member 111 in contact with the peripheral edge portion W3 (bevel portion) of the substrate W.

The bevel cleaning mechanism 110 includes a belt-shaped bevel cleaning member 111 and a rotating body 112 around which the bevel cleaning member 111 is wound. The rotating body 112 has a peripheral surface formed of a PVA sponge (elastic support) or the like, and elastically supports the bevel cleaning member 111 . The rotating body 112 rotates the bevel cleaning member 111 in a direction opposite to the direction in which the substrate W is rotated.
The bevel cleaning member 111 has a geometrical structure, capillary force, or electrification. As a result, the peripheral edge portion W3 of the substrate W is cleaned, and the nano-level foreign matter X adhering to the peripheral edge portion W3 can be effectively removed.

FIG. 16 is a side view showing the configuration of a substrate processing apparatus according to one modification.
The substrate processing apparatus shown in FIG. 16 includes a hollow substrate rotation mechanism 210 that horizontally holds the substrate W and rotates it about its axis, and a scrubbing (cleaning) mechanism for scrubbing the upper surface of the substrate W held by the substrate rotation mechanism 210 . A scrubber 250 (processing head, viscous bottom layer foreign matter removing device) that removes foreign matter and scratches from the upper surface of the substrate W by scrubbing) and a hydrostatic support mechanism 290 that supports the lower surface of the substrate W by fluid pressure without contact. I have.

The scrubber 250 is arranged above the substrate W held by the substrate rotation mechanism 210 , and the static pressure support mechanism 290 is arranged below the substrate W held by the substrate rotation mechanism 210 . Furthermore, the static pressure support mechanism 290 is arranged inside the space inside the substrate rotation mechanism 210 . These substrate rotation mechanism 210 , scrubber 250 , and static pressure support mechanism 290 are surrounded by partition wall 206 .

The partition wall 206 is formed with a clean air inlet 206a and an exhaust duct 209, and an exhaust mechanism 208 is installed. The exhaust mechanism 208 includes a fan 208A and a filter 208B. Surface treatment (scrubbing), cleaning, and drying of the substrate W in the substrate processing apparatus in this embodiment may be performed continuously in the processing chamber 207 inside the partition wall 206 .

The substrate rotation mechanism 210 includes a plurality of chucks 211 that grip the peripheral edge of the substrate W, and a hollow motor 212 that rotates the substrate W via these chucks 211 . The stator of hollow motor 212 is fixed to cylindrical stationary member 214 . Also, the rotor of hollow motor 212 is fixed to rotary base 216 . The rotation base 216 is provided with the chuck 211 and the rotation cover 225 described above. Chuck 211 is connected to lift mechanism 230 .

Above the substrate W, a cleaning liquid supply nozzle 227 for supplying pure water as a cleaning liquid to the upper surface of the substrate W is arranged. The cleaning liquid supply nozzle 227 is connected to a cleaning liquid supply source (not shown) so that pure water is supplied to the upper surface of the substrate W through the cleaning liquid supply nozzle 227 . The pure water supplied to the substrate W is shaken off from the rotating substrate W by centrifugal force, caught on the inner peripheral surface of the rotating cover 225, and discharged from a liquid discharge hole (not shown). In addition, above the substrate W, a two-fluid jet nozzle 280 is arranged.

The static pressure support mechanism 290 includes a support stage 291 arranged below the substrate W, a stage lifting mechanism 298 that lifts and lowers the support stage 291 , and a stage rotation mechanism 299 that rotates the support stage 291 .

The scrubber 250 is arranged above the substrate W. As shown in FIG. The scrubber 250 is connected to one end of a swing arm 253 via a scrubber shaft 251 , and the other end of the swing arm 253 is fixed to a swing shaft 254 . The swing shaft 254 is connected to the shaft rotation mechanism 255 . When the swing shaft 254 is driven by this shaft rotation mechanism 255 , the scrubber 250 moves between a position above the substrate W and a position where it retreats from the substrate W. As shown in FIG. A scrubber elevating mechanism 256 (actuator) that moves the scrubber 250 in the vertical direction is further connected to the swing shaft 254 .

During scrubbing by the scrubber 250, pure water, an aqueous surfactant solution, and an alkaline or acidic cleaning liquid are supplied to the back surface of the substrate W facing upward. The cleaning liquid may be supplied to the back surface of the substrate W when the scrubber 250 is not in contact with the substrate W. FIG.

17 is a sectional view showing a tape cartridge 260 provided in the scrubber 250 shown in FIG. 16. FIG.
As shown in FIG. 17, the tape cartridge 260 includes a cleaning tape 261 (substrate cleaning member 200), a pressing member 262 for pressing the cleaning tape 261 against the substrate W, and a pressing member 262 for urging the wafer. a tape feeding reel 264 for feeding the cleaning tape 261; and a tape take-up reel 265 for winding the cleaning tape 261 used in the treatment. Reference numeral 271 denotes an end mark detection sensor that detects the winding end mark of the cleaning tape 261 .

The cleaning tape 261 is fed from the tape supply reel 264 to the tape take-up reel 265 via the pressing member 262 . The multiple pressing members 262 extend along the radial direction of the scrubber 250 and are arranged at equal intervals in the circumferential direction of the scrubber 250 . Therefore, the contact surface (substrate contact surface) of each cleaning tape 261 with the substrate W extends in the radial direction of the scrubber 250 . In the example shown in FIG. 17, a spring is used as the biasing mechanism 263 .

The contact surface of the cleaning tape 261 with the substrate W may be added with the above-described geometrical structure, capillary force, or chargeability. According to this configuration, the removal rate of foreign matter from the entire back surface of the substrate W can be increased, and not only the foreign matter having a size of 100 nm or more but also the nano-level foreign matter can be removed more effectively, and the surface scratches of the substrate W can also be removed. can be removed better.

Alternatively, as another embodiment, the substrate W may be held and fixed at a predetermined position while being vacuum-sucked from the back side of the substrate W by a method such as a Bernoulli chuck.
The mode of removing foreign matter is not limited to the above mode. For example, a sheet (substrate cleaning member 200) having the above-described geometrical structure, capillary force, or chargeability is pressed against the substrate W (work), or the sheet is used to remove the substrate. Wiping off the W (work) can also bring about the foreign matter removing effect. The actuator in this case can be, for example, a multi-joint robot arm.

Further, for example, in the above-described embodiment, the substrate W is laid flat (horizontal posture) to remove the foreign matter. I don't mind.

Further, for example, in the above-described embodiments, the configuration in which the substrate cleaning apparatus of the present invention is installed in a substrate processing apparatus for CMP is exemplified. (for example, a back surface polishing device, a bevel polishing device, an etching device, or a plating device).

Reference Signs List 1 Substrate processing apparatus 21 Substrate polishing apparatus 31 Substrate cleaning apparatus 60 Cleaning module 81 Roll cleaning member 81A Elastic support 81B Surface layer 82a Projection 83 Nozzle 91 Pencil cleaning mechanism 91b Arm 91c Pivot shaft 92 Pencil cleaning member 100 Cleaning liquid 101 Viscous bottom layer 101a Viscous bottom layer 110 Bevel cleaning mechanism 111 Bevel cleaning member 200 Substrate cleaning member , 200A Substrate cleaning member 200B Substrate cleaning member 200C Substrate cleaning member 201 Protrusion 201a Groove 202 Capillary hole 203 Functional group 250 Scrubber 261 Cleaning tape W Substrate , X... foreign matter

Claims (10)

a cleaning liquid supply step of supplying the cleaning liquid to the surface of the substrate;
a viscous bottom layer foreign matter removing step of removing foreign matter that has entered the viscous bottom layer of the cleaning liquid formed on the surface of the substrate. 2. The substrate cleaning method according to claim 1, wherein in said viscous bottom layer foreign matter removing step, said foreign matter is entangled with a substrate cleaning member having a geometrical structure. 2. The substrate cleaning method according to claim 1, wherein in said viscous bottom layer foreign matter removing step, said foreign matter is adsorbed by a substrate cleaning member having a capillary force. 2. The substrate cleaning method according to claim 1, wherein in said viscous bottom layer foreign matter removing step, said foreign matter is electrostatically adsorbed by a charged substrate cleaning member. 3. The method further comprises a break-in step, at least before the viscous bottom layer foreign matter removing step, for breaking-in the substrate cleaning member by bringing the substrate cleaning member into contact with the substrate or the dummy substrate while rotating the substrate cleaning member. 5. The substrate cleaning method according to any one of 2 to 4. a cleaning liquid supply device for supplying cleaning liquid to the surface of the substrate;
a viscous bottom layer foreign matter removing device for removing foreign matter that has entered the viscous bottom layer of the cleaning liquid formed on the surface of the substrate. A substrate cleaning member having a geometric structure comprising:
A substrate cleaning member comprising a porous member having a pore diameter of 1 μm to 1 mm. A substrate cleaning member having capillary force,
A substrate cleaning member having a capillary hole diameter of 20 μm or more. A substrate cleaning member having chargeability,
A substrate cleaning member having a surface decorated with positively or negatively charged functional groups. A method for manufacturing a substrate cleaning member, comprising decorating the surface of a porous member with a basic functional group or an acidic functional group.

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