TW202232799A - 有機半導體器件、有機el器件、光電二極體感測器、顯示裝置、發光裝置、電子裝置及照明設備 - Google Patents

有機半導體器件、有機el器件、光電二極體感測器、顯示裝置、發光裝置、電子裝置及照明設備 Download PDF

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TW202232799A
TW202232799A TW110147465A TW110147465A TW202232799A TW 202232799 A TW202232799 A TW 202232799A TW 110147465 A TW110147465 A TW 110147465A TW 110147465 A TW110147465 A TW 110147465A TW 202232799 A TW202232799 A TW 202232799A
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layer
light
organic
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hole transport
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TW110147465A
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Chinese (zh)
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瀬尾広美
渡部剛吉
Θ田藍莉
河野優太
大澤信晴
木称裕允
瀬尾哲史
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日商半導體能源研究所股份有限公司
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Publication of TW202232799A publication Critical patent/TW202232799A/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • H10K50/156Hole transporting layers comprising a multilayered structure
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/20Delayed fluorescence emission
    • HELECTRICITY
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    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/30Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Light Receiving Elements (AREA)
TW110147465A 2020-12-29 2021-12-17 有機半導體器件、有機el器件、光電二極體感測器、顯示裝置、發光裝置、電子裝置及照明設備 TW202232799A (zh)

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JP2020-219842 2020-12-29
JP2020219842 2020-12-29

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TW202232799A true TW202232799A (zh) 2022-08-16

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US (2) US12232342B2 (https=)
JP (1) JP2022104835A (https=)
KR (1) KR20220095130A (https=)
CN (1) CN114695776A (https=)
DE (1) DE102021133839A1 (https=)
TW (1) TW202232799A (https=)

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DE102020117123A1 (de) * 2019-07-05 2021-01-07 Semiconductor Energy Laboratory Co., Ltd. Material für lochtransportschicht, material für lochinjektionsschicht, organische verbindung, licht emittierende vorrichtung, licht emittierende einrichtung, elektronisches gerät und beleuchtungsvorrichtung
DE102021107060A1 (de) 2020-04-03 2021-10-07 Semiconductor Energy Laboratory Co., Ltd. Arylamin-Verbindung, Material für Lochtransportschicht, Material für Lochinjektionsschicht, Licht emittierende Vorrichtung, Licht emittierendes Gerät, elektronisches Gerät und Beleuchtungsvorrichtung
US20220271254A1 (en) * 2021-02-25 2022-08-25 Apple Inc. Organic Light-Emitting Diode Display with Single Anti-Node Optical Cavities
CN116535323B (zh) * 2023-04-28 2025-03-14 浙江虹舞科技有限公司 一种三芳胺类化合物以及包含该化合物的有机电致发光器件
WO2026017612A1 (en) * 2024-07-15 2026-01-22 Merck Patent Gmbh Organic light-emitting device

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US6043510A (en) * 1996-05-22 2000-03-28 Akira Kawamoto Molecule-doped negative-resistance device and method for manufacturing the same
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
KR102059908B1 (ko) 2007-12-03 2019-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 카바졸 유도체, 및 카바졸 유도체를 사용하는 발광 소자, 발광 장치 및 전자 기기
US20100104969A1 (en) 2008-10-24 2010-04-29 Konica Minolta Business Technologies, Inc. Organic photoconductor, image forming method and image forming apparatus
KR101784400B1 (ko) 2009-05-29 2017-10-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 화합물
US8642190B2 (en) 2009-10-22 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Fluorene derivative, light-emitting element, light-emitting device, electronic device, and lighting device
JP5731830B2 (ja) * 2010-01-19 2015-06-10 パナソニック株式会社 面状発光装置
JP6187080B2 (ja) * 2012-10-11 2017-08-30 Tdk株式会社 電界発光素子
US9496503B2 (en) 2013-03-25 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device
KR102399864B1 (ko) 2013-03-26 2022-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 유기 화합물, 발광 소자, 발광 장치, 표시 장치, 전자 기기 및 조명 장치
JP6253242B2 (ja) 2013-04-15 2017-12-27 キヤノン株式会社 有機el素子、画像形成装置、表示装置及び撮像装置
KR102447308B1 (ko) * 2015-05-28 2022-09-26 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101708176B1 (ko) 2015-12-31 2017-02-20 머티어리얼사이언스 주식회사 유기 화합물 및 이를 포함하는 유기 전계 발광 소자
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JP6923163B2 (ja) * 2016-12-14 2021-08-18 国立大学法人山形大学 組成物および有機光電子素子並びにその製造方法
DE102020117123A1 (de) 2019-07-05 2021-01-07 Semiconductor Energy Laboratory Co., Ltd. Material für lochtransportschicht, material für lochinjektionsschicht, organische verbindung, licht emittierende vorrichtung, licht emittierende einrichtung, elektronisches gerät und beleuchtungsvorrichtung
DE102021107060A1 (de) 2020-04-03 2021-10-07 Semiconductor Energy Laboratory Co., Ltd. Arylamin-Verbindung, Material für Lochtransportschicht, Material für Lochinjektionsschicht, Licht emittierende Vorrichtung, Licht emittierendes Gerät, elektronisches Gerät und Beleuchtungsvorrichtung

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Publication number Publication date
CN114695776A (zh) 2022-07-01
US20220216445A1 (en) 2022-07-07
US12232342B2 (en) 2025-02-18
KR20220095130A (ko) 2022-07-06
JP2022104835A (ja) 2022-07-11
US20250160107A1 (en) 2025-05-15
DE102021133839A1 (de) 2022-06-30

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