TW202229408A - 樹脂組成物、半導體裝置的製造方法、硬化物、半導體裝置及聚醯亞胺前驅物的合成方法 - Google Patents

樹脂組成物、半導體裝置的製造方法、硬化物、半導體裝置及聚醯亞胺前驅物的合成方法 Download PDF

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TW202229408A
TW202229408A TW110136323A TW110136323A TW202229408A TW 202229408 A TW202229408 A TW 202229408A TW 110136323 A TW110136323 A TW 110136323A TW 110136323 A TW110136323 A TW 110136323A TW 202229408 A TW202229408 A TW 202229408A
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insulating film
group
resin composition
organic insulating
semiconductor
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TW110136323A
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Chinese (zh)
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米田聡
生田目豊
柴田智章
小林香織
小野関仁
鈴木直也
野中敏央
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日商昭和電工材料股份有限公司
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    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
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    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1028—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
    • C08G73/1032—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous characterised by the solvent(s) used
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    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
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    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
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  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW110136323A 2020-09-30 2021-09-29 樹脂組成物、半導體裝置的製造方法、硬化物、半導體裝置及聚醯亞胺前驅物的合成方法 TW202229408A (zh)

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PCT/JP2020/037322 WO2022070362A1 (ja) 2020-09-30 2020-09-30 樹脂組成物、半導体装置の製造方法、硬化物及び半導体装置
WOPCT/JP2020/037322 2020-09-30

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US (1) US20240018306A1 (https=)
JP (1) JP7853216B2 (https=)
KR (1) KR20230075457A (https=)
TW (1) TW202229408A (https=)
WO (2) WO2022070362A1 (https=)

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JP2023132964A (ja) * 2022-03-11 2023-09-22 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
JP2023136961A (ja) * 2022-03-17 2023-09-29 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
JP2023136962A (ja) * 2022-03-17 2023-09-29 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
CN118946610A (zh) * 2022-03-25 2024-11-12 艾曲迪微系统股份有限公司 混合键合绝缘膜形成材料、半导体装置的制造方法及半导体装置
WO2023228321A1 (ja) * 2022-05-25 2023-11-30 株式会社レゾナック 半導体装置の製造方法
WO2024054799A1 (en) * 2022-09-07 2024-03-14 Adeia Semiconductor Bonding Technologies Inc. Rapid thermal processing for direct bonding
TW202435271A (zh) * 2023-01-11 2024-09-01 日商東麗股份有限公司 積層體的製造方法、樹脂組成物
TW202435270A (zh) * 2023-01-11 2024-09-01 日商東麗股份有限公司 積層體、半導體元件及mems元件
CN120615235A (zh) * 2023-02-03 2025-09-09 三井化学株式会社 半导体结构体及其制造方法
CN120958551A (zh) * 2023-03-31 2025-11-14 三井化学株式会社 组合物、基板层叠体及基板层叠体的制造方法
JPWO2024219502A1 (https=) * 2023-04-19 2024-10-24
TW202514829A (zh) * 2023-05-30 2025-04-01 日商大賽璐股份有限公司 聚合物及含其之感光性樹脂組成物、銅膏、液狀組成物、半導體裝置之製造方法及半導體連接用銅柱之製造方法
TW202507755A (zh) * 2023-05-30 2025-02-16 日商大賽璐股份有限公司 聚合物及含其之感光性樹脂組成物、銅膏、液狀組成物、半導體裝置之製造方法及半導體連接用銅柱之製造方法
CN121219827A (zh) * 2023-05-30 2025-12-26 株式会社大赛璐 聚合物及包含该聚合物的感光性树脂组合物、铜糊、液态组合物、半导体器件的制造方法及半导体连接用铜柱的制造方法
CN121058079A (zh) * 2023-08-10 2025-12-02 株式会社力森诺科 半导体装置的制造方法及半导体装置
WO2025094691A1 (ja) * 2023-10-30 2025-05-08 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、絶縁膜形成材料キット、半導体装置の製造方法及び半導体装置
TW202540211A (zh) * 2024-02-22 2025-10-16 日商富士軟片股份有限公司 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法及半導體元件、以及聚醯胺酸酯之製造方法
WO2026070803A1 (ja) * 2024-09-27 2026-04-02 富士フイルム株式会社 接合体の製造方法、接合体、デバイスの製造方法、及び、樹脂組成物
WO2026069655A1 (ja) * 2024-09-30 2026-04-02 Ｒａｐｉｄｕｓ株式会社 半導体装置および半導体装置の製造方法

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KR101934171B1 (ko) * 2014-03-17 2018-12-31 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 그리고 반도체 장치
CN108431135B (zh) * 2015-12-11 2020-06-23 东丽株式会社 树脂组合物、树脂的制造方法、树脂膜的制造方法和电子设备的制造方法
WO2018179382A1 (ja) * 2017-03-31 2018-10-04 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
KR102532485B1 (ko) * 2017-09-07 2023-05-16 도레이 카부시키가이샤 수지 조성물, 수지막의 제조 방법 및 전자 디바이스의 제조 방법
JP7238271B2 (ja) 2018-05-21 2023-03-14 住友ベークライト株式会社 電子装置、及び電子装置の製造方法
JP7351637B2 (ja) * 2018-05-29 2023-09-27 旭化成株式会社 樹脂組成物、及び硬化膜の製造方法

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US20240018306A1 (en) 2024-01-18
WO2022070362A1 (ja) 2022-04-07
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