KR20230075457A - 수지 조성물, 반도체 장치의 제조 방법, 경화물, 반도체 장치 및 폴리이미드 전구체의 합성 방법 - Google Patents

수지 조성물, 반도체 장치의 제조 방법, 경화물, 반도체 장치 및 폴리이미드 전구체의 합성 방법 Download PDF

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KR20230075457A
KR20230075457A KR1020237010875A KR20237010875A KR20230075457A KR 20230075457 A KR20230075457 A KR 20230075457A KR 1020237010875 A KR1020237010875 A KR 1020237010875A KR 20237010875 A KR20237010875 A KR 20237010875A KR 20230075457 A KR20230075457 A KR 20230075457A
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insulating film
resin composition
organic insulating
semiconductor
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사토시 요네다
유타카 나마타메
토모아키 시바타
카오리 코바야시
히토시 오노제키
나오야 스즈키
토시히사 노나카
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가부시끼가이샤 레조낙
에이치디 마이크로시스템즈 가부시키가이샤
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    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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    • C—CHEMISTRY; METALLURGY
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    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • C—CHEMISTRY; METALLURGY
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    • C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/04—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polycarbonamides, polyesteramides or polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
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    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • C—CHEMISTRY; METALLURGY
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
    • C08G73/1028—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous
    • C08G73/1032—Preparatory processes from tetracarboxylic acids or derivatives and diamines characterised by the process itself, e.g. steps, continuous characterised by the solvent(s) used
    • C—CHEMISTRY; METALLURGY
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    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12—Unsaturated polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/24—Homopolymers or copolymers of amides or imides
    • H01L21/31—
    • H01L21/60—
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    • H01L23/31—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
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    • H—ELECTRICITY
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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020237010875A 2020-09-30 2021-09-28 수지 조성물, 반도체 장치의 제조 방법, 경화물, 반도체 장치 및 폴리이미드 전구체의 합성 방법 Pending KR20230075457A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/037322 2020-09-30
PCT/JP2020/037322 WO2022070362A1 (ja) 2020-09-30 2020-09-30 樹脂組成物、半導体装置の製造方法、硬化物及び半導体装置
PCT/JP2021/035672 WO2022071329A1 (ja) 2020-09-30 2021-09-28 樹脂組成物、半導体装置の製造方法、硬化物、半導体装置及びポリイミド前駆体の合成方法

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US (1) US20240018306A1 (https=)
JP (1) JP7853216B2 (https=)
KR (1) KR20230075457A (https=)
TW (1) TW202229408A (https=)
WO (2) WO2022070362A1 (https=)

Families Citing this family (19)

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JP2023132964A (ja) * 2022-03-11 2023-09-22 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
JP2023136961A (ja) * 2022-03-17 2023-09-29 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
JP2023136962A (ja) * 2022-03-17 2023-09-29 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、半導体装置の製造方法及び半導体装置
CN118946610A (zh) * 2022-03-25 2024-11-12 艾曲迪微系统股份有限公司 混合键合绝缘膜形成材料、半导体装置的制造方法及半导体装置
WO2023228321A1 (ja) * 2022-05-25 2023-11-30 株式会社レゾナック 半導体装置の製造方法
WO2024054799A1 (en) * 2022-09-07 2024-03-14 Adeia Semiconductor Bonding Technologies Inc. Rapid thermal processing for direct bonding
TW202435271A (zh) * 2023-01-11 2024-09-01 日商東麗股份有限公司 積層體的製造方法、樹脂組成物
TW202435270A (zh) * 2023-01-11 2024-09-01 日商東麗股份有限公司 積層體、半導體元件及mems元件
CN120615235A (zh) * 2023-02-03 2025-09-09 三井化学株式会社 半导体结构体及其制造方法
CN120958551A (zh) * 2023-03-31 2025-11-14 三井化学株式会社 组合物、基板层叠体及基板层叠体的制造方法
JPWO2024219502A1 (https=) * 2023-04-19 2024-10-24
TW202514829A (zh) * 2023-05-30 2025-04-01 日商大賽璐股份有限公司 聚合物及含其之感光性樹脂組成物、銅膏、液狀組成物、半導體裝置之製造方法及半導體連接用銅柱之製造方法
TW202507755A (zh) * 2023-05-30 2025-02-16 日商大賽璐股份有限公司 聚合物及含其之感光性樹脂組成物、銅膏、液狀組成物、半導體裝置之製造方法及半導體連接用銅柱之製造方法
CN121219827A (zh) * 2023-05-30 2025-12-26 株式会社大赛璐 聚合物及包含该聚合物的感光性树脂组合物、铜糊、液态组合物、半导体器件的制造方法及半导体连接用铜柱的制造方法
CN121058079A (zh) * 2023-08-10 2025-12-02 株式会社力森诺科 半导体装置的制造方法及半导体装置
WO2025094691A1 (ja) * 2023-10-30 2025-05-08 Ｈｄマイクロシステムズ株式会社 絶縁膜形成材料、絶縁膜形成材料キット、半導体装置の製造方法及び半導体装置
TW202540211A (zh) * 2024-02-22 2025-10-16 日商富士軟片股份有限公司 樹脂組成物、硬化物、積層體、硬化物之製造方法、積層體之製造方法、半導體元件之製造方法及半導體元件、以及聚醯胺酸酯之製造方法
WO2026070803A1 (ja) * 2024-09-27 2026-04-02 富士フイルム株式会社 接合体の製造方法、接合体、デバイスの製造方法、及び、樹脂組成物
WO2026069655A1 (ja) * 2024-09-30 2026-04-02 Ｒａｐｉｄｕｓ株式会社 半導体装置および半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019204818A (ja) 2018-05-21 2019-11-28 住友ベークライト株式会社 電子装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010087229A (ja) * 2008-09-30 2010-04-15 Sanyo Electric Co Ltd 半導体モジュール、半導体モジュールの製造方法および携帯機器
KR101934171B1 (ko) * 2014-03-17 2018-12-31 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 그리고 반도체 장치
CN108431135B (zh) * 2015-12-11 2020-06-23 东丽株式会社 树脂组合物、树脂的制造方法、树脂膜的制造方法和电子设备的制造方法
WO2018179382A1 (ja) * 2017-03-31 2018-10-04 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
KR102532485B1 (ko) * 2017-09-07 2023-05-16 도레이 카부시키가이샤 수지 조성물, 수지막의 제조 방법 및 전자 디바이스의 제조 방법
JP7351637B2 (ja) * 2018-05-29 2023-09-27 旭化成株式会社 樹脂組成物、及び硬化膜の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019204818A (ja) 2018-05-21 2019-11-28 住友ベークライト株式会社 電子装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
비특허문헌 1: F.C. Chen et al., "System on Integrated Chips(SoIC TM) for 3D Heterogeneous Integration", 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), p. 594-599(2019)

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US20240018306A1 (en) 2024-01-18
WO2022070362A1 (ja) 2022-04-07
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