TW202226426A - Gap pin - Google Patents

Gap pin Download PDF

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Publication number
TW202226426A
TW202226426A TW110139882A TW110139882A TW202226426A TW 202226426 A TW202226426 A TW 202226426A TW 110139882 A TW110139882 A TW 110139882A TW 110139882 A TW110139882 A TW 110139882A TW 202226426 A TW202226426 A TW 202226426A
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Taiwan
Prior art keywords
spacer pin
dlc film
average value
pin according
support
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TW110139882A
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Chinese (zh)
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TWI798896B (en
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浜島浩
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日商京瓷股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

A gap pin related to this disclosure includes a base portion having a first surface and a second surface located at a side opposite to the first surface, and a support portion located on the first surface, having a third surface facing the first surface and a fourth surface located at a side opposite to the third surface, and including a contact portion with a supported body. The average value of a cut level difference (R[delta]c) that represents the difference between a cut level at a load length rate of 25% on a roughness curve and the cut level at a load length rate of 75% on the roughness curve of the contact portion is smaller than the second surface.

Description

間隔銷 spacer pin

本發明係有關一種間隔銷。 The present invention relates to a spacer pin.

以往，已有使用一種用以在載置台對半導體晶圓、LCD基板等之被處理物進行熱處理的熱處理裝置。就如此的熱處理裝置而言，在專利文獻1係記載一種熱處理裝置，其具備：具有熱源之載置台；在載置台上以具有間隙的方式支撐被處理物之間隔銷；及可升降的支撐銷，該支撐銷係貫通載置台，且可在間隔銷上方進行移動而將被處理物載置在間隔銷上。在專利文獻1所述之熱處理裝置係使自熱源發出的熱量從載置台表面進行輻射，對被處理物施予熱處理。 Conventionally, a heat treatment apparatus for heat-treating a workpiece such as a semiconductor wafer and an LCD substrate on a mounting table has been used. Regarding such a heat treatment apparatus, Patent Document 1 describes a heat treatment apparatus including: a mounting table having a heat source; a spacer pin for supporting an object to be processed on the mounting table with a gap; and a support pin that can be raised and lowered. , the support pin penetrates through the placing table, and can move above the spacing pin to place the object to be processed on the spacing pin. The heat treatment apparatus described in Patent Document 1 radiates the heat generated from the heat source from the surface of the mounting table, and applies heat treatment to the object to be treated.

[先前技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2003-22947號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2003-22947

例如，若以氧化鋁等陶瓷來形成記載於專利文獻1之間隔銷，則會有因接觸被處理物而容易在被處理物造成刮傷之問題。因此，要求一種即使接觸被處理物亦可降低在被處理物造成刮傷之虞的間隔銷。 For example, if the spacer pins described in Patent Document 1 are formed of ceramics such as alumina, there is a problem that the object to be processed is easily scratched due to contact with the object to be processed. Therefore, there is a need for a spacer pin that reduces the risk of scratching the object to be processed even if it comes into contact with the object to be processed.

有關本揭示之間隔銷係包含：基部，係具有第1面、及位於該第1面之相反側的第2面；支撐部，係位於前述第1面上，且具有第3面及第4面，該第3面係與前述第1面相向，該第4面係位於該第3面之相反側且包含與被支撐物接觸之接觸部。接觸部之橫截程度差(Rδc)的平均值係小於第2面，該橫截程度差(Rδc)係表示在粗度曲線之25%的負載長度率之橫截程度、與在粗度曲線之75%的負載長度率之橫截程度的差。 The spacer pin related to the present disclosure includes: a base part, which has a first surface, and a second surface located on the opposite side of the first surface; a support part, which is located on the first surface and has a third surface and a fourth surface The third surface faces the first surface, and the fourth surface is located on the opposite side of the third surface and includes a contact portion that is in contact with the supported object. The average value of the cross-sectional degree difference (R δ c) of the contact portion is smaller than that of the second surface, and the cross-sectional degree difference (R δ c) represents the cross-sectional degree of the 25% load length ratio in the roughness curve, and The difference in the degree of transversal at 75% of the load length ratio of the roughness curve.

有關本揭示之其他的間隔銷係包含：基部，係具有第1面、及位於該第1面之相反側的第2面；支撐部，係位於前述第1面上，且具有第3面及第4面，該第3面係與前述第1面相向，該第4面係位於該第3面之相反側且包含與被支撐物接觸之接觸部。接觸部之在粗度曲線之均方根傾斜(R△q)的平均值係小於第2面。 Other spacer pins related to the present disclosure include: a base part having a first surface and a second surface located on the opposite side of the first surface; a support part located on the first surface and having a third surface and The fourth surface, the third surface is opposed to the first surface, the fourth surface is located on the opposite side of the third surface, and includes a contact portion that is in contact with the supported object. The average value of the root mean square inclination (RΔq) of the thickness curve of the contact portion is smaller than that of the second surface.

有關本揭示之熱處理裝置係具備載置台、及上述之間隔銷。間隔銷係以在載置台上設有間隙而載置被支撐物之方式設於載置台上。 The heat treatment apparatus according to the present disclosure includes a mounting table and the spacer pins described above. The spacer pins are provided on the mounting table so that the supported object is mounted with a gap on the mounting table.

有關本揭示之靜電夾頭裝置係具備載置台、及位於載置台之周圍的聚焦環。聚焦環係具備：沿著圓周所設之固定部、及與固定部設於同心圓上且可在上下方向移位之可動部。在固定部之上表面具備間隔銷。 The electrostatic chuck device according to the present disclosure includes a mounting table and a focus ring positioned around the mounting table. The focus ring is provided with: a fixed part provided along the circumference, and a movable part provided on a concentric circle with the fixed part and can be displaced in the up-down direction. A spacer pin is provided on the upper surface of the fixed portion.

有關本揭示之間隔銷之在支撐部之相接於被支撐物的支撐面之接觸部的橫截程度差(Rδc)之平均值或均方根傾斜(R△q)的平均值係較小。是故，不易從接觸部脫粒。因此，若依據有關本揭示之間隔銷，即使接觸被支撐物，亦可降低在被支撐物造成刮傷之虞。 The average value of the cross-sectional degree difference (R δ c ) or the average value of the root mean square inclination (R Δ q ) of the contact portion of the spacer pin at the contact portion of the support portion and the support surface of the supported object according to the present disclosure is smaller. Therefore, it is not easy to thresh from the contact part. Therefore, according to the spacing pin of the present disclosure, even if it contacts the supported object, the risk of scratching the supported object can be reduced.

1:間隔銷 1: Spacer pin

2:基部 2: base

3:支撐部 3: Support part

3a:接觸部 3a: Contact part

10:熱處理裝置 10: Heat treatment device

11:處理室 11: Processing room

12:載置台 12: Mounting table

12a:凹部 12a: Recess

13:升降銷 13: Lifting pin

14:檔門 14: Doors

15:缸體 15: Cylinder block

16:蓋體 16: Cover

17:制動器 17: Brake

18:排氣口 18: exhaust port

19:加熱器 19: Heater

20:保持構件 20: Keeping Components

21:貫通孔 21: Through hole

22:連結導桿 22: Connecting guide rod

23:正時皮帶 23: Timing belt

24:步進馬達 24: Stepper Motor

25:驅動皮帶輪 25: Drive pulley

26:從動皮帶輪 26: driven pulley

30:靜電夾頭裝置 30: Electrostatic chuck device

31:載置台 31: Mounting table

31a:載置面 31a: Mounting surface

32:保持部 32: Keeping Department

33:聚焦環 33: Focus Ring

34:上部環 34: Upper Ring

35:下部環 35: Lower Ring

36:可動部 36: Movable part

36a:第5面 36a: face 5

36b:開口部 36b: Opening

37:固定部 37: Fixed part

37a:第6面 37a: Side 6

38:升降銷 38: Lifting pin

S:空間 S: space

W:晶圓 W: Wafer

圖1A係表示有關本揭示之一實施型態的間隔銷之立體圖。 FIG. 1A is a perspective view showing a spacer pin according to an embodiment of the present disclosure.

圖1B係表示有關本揭示之一實施型態的間隔銷之側視圖。 FIG. 1B shows a side view of a spacer pin according to an embodiment of the present disclosure.

圖2A係表示有關本揭示之一實施型態的熱處理裝置之剖面圖。 2A is a cross-sectional view showing a heat treatment apparatus according to an embodiment of the present disclosure.

圖2B係放大圖2A之A部的剖面圖。 FIG. 2B is an enlarged cross-sectional view of part A of FIG. 2A .

圖3A係表示有關本揭示之一實施型態的靜電夾頭裝置之立體圖，且表示於載置台載置被支撐物之狀態。 3A is a perspective view showing an electrostatic chuck device according to an embodiment of the present disclosure, and shows a state in which a supported object is placed on a placing table.

圖3B係表示有關本揭示之一實施型態的靜電夾頭裝置之立體圖，且表示從載置台舉起被支撐物之狀態。 3B is a perspective view showing an electrostatic chuck device according to an embodiment of the present disclosure, and shows a state in which a supported object is lifted from a mounting table.

[用以實施發明之形態] [Form for carrying out the invention]

依據圖1A及1B而詳細說明有關本揭示之一實施型態的間隔銷。圖1A係表示有關本揭示之一實施型態的間隔銷1之立體圖。有關圖1A所示之一實施型態的間隔銷1係包含基部2及支撐部3。 A spacer pin related to one embodiment of the present disclosure is described in detail with reference to FIGS. 1A and 1B . FIG. 1A is a perspective view showing a spacer pin 1 according to an embodiment of the present disclosure. A spacer pin 1 according to an embodiment shown in FIG. 1A includes a base portion 2 and a support portion 3 .

基部2係具有第1面(以下亦稱為上表面)、及位於該第1面之相反側之第2面(以下亦稱為下表面)，且為例如具有平板狀之構件。從俯視觀看，在圖1A所示之基部2係具有圓形狀。基部2係用以固定後述之支撐部3的構件，例如以陶瓷所形成。就陶瓷而言並無限定，例如可列舉以氧化鋁(又稱礬土，Alumina)作為主成分之陶瓷、以氧化鋯(又稱鋯土，Zirconia)作為主成分之陶瓷、以碳化矽作為主成分之陶瓷、以碳化硼作為主成分之陶瓷等。 The base portion 2 has a first surface (hereinafter also referred to as an upper surface) and a second surface (hereinafter also referred to as a lower surface) on the opposite side of the first surface, and is, for example, a flat plate-like member. The base 2 shown in FIG. 1A has a circular shape when viewed from above. The base portion 2 is a member for fixing the support portion 3 to be described later, and is formed of, for example, ceramics. There is no limitation in terms of ceramics, for example, ceramics with alumina (also known as bauxite, Alumina) as the main component, ceramics with zirconia (also known as zirconia, Zirconia) as the main component, and silicon carbide as the main component. Ceramics with components, ceramics with boron carbide as the main component, etc.

在本說明書中，所謂「主成分」係意指構成陶瓷之成分的合計100質量%之中，佔有80質量%以上之成分。構成陶瓷之成分係可藉由使用CuKα線之X線繞射裝置而進行鑑定。各成分之含量係例如可藉由ICP(Inductively Coupled Plasma，感應耦合電漿)發光分光分析裝置或螢光X線分析裝置而求得。 In this specification, "main component" means the component which occupies 80 mass % or more among the total 100 mass % of components which comprise a ceramic. The components constituting the ceramics can be identified by an X-ray diffraction apparatus using CuKα rays. The content of each component can be obtained by, for example, an ICP (Inductively Coupled Plasma) emission spectroscopic analyzer or a fluorescent X-ray analyzer.

尤其，間隔銷1為由以氧化鋁(又稱礬土，Alumina)作為主成分之陶瓷所構成時，氧化鋁(又稱礬土，Alumina)之含量較佳為99.6質量%以上。 In particular, when the spacer pins 1 are composed of ceramics mainly composed of alumina (also called alumina), the content of alumina (also called alumina) is preferably 99.6 mass % or more.

基部2之大小係例如依照具備間隔銷1之裝置的大小等而被適當設定。如圖1A所示，在以俯視觀看基部2具有圓形狀的情形，基部2之直徑(圖1B)的D1)例如約為3.5mm以上6.5mm以下。基部2之高度(圖1B的H1)例如約為0.5mm以上1.1mm以下。 The size of the base portion 2 is appropriately set according to, for example, the size of the device including the spacer pins 1 . As shown in FIG. 1A , when the base 2 has a circular shape in plan view, the diameter of the base 2 (D1) in FIG. 1B is, for example, about 3.5 mm or more and 6.5 mm or less. The height of the base portion 2 ( H1 in FIG. 1B ) is, for example, about 0.5 mm or more and 1.1 mm or less.

支撐部3係具有與基部2之第1面(上表面)相向的第3面、及位於該第3面之相反側之第4面，且為例如具有柱狀之構件。在圖1A所示之支撐部3係具有圓柱狀。支撐部3係用以支撐被支撐物之構件，例如以陶瓷所形成。就陶瓷而言，係與上述之基部2相同，例如可列舉以氧化鋁(又稱礬土， Alumina)作為主成分之陶瓷、以氧化鋯(又稱鋯土，Zirconia)作為主成分之陶瓷、以碳化矽作為主成分之陶瓷、以碳化硼作為主成分之陶瓷等。 The support part 3 has the 3rd surface which opposes the 1st surface (upper surface) of the base part 2, and the 4th surface located on the opposite side of this 3rd surface, and is a member which has a columnar shape, for example. The support portion 3 shown in FIG. 1A has a cylindrical shape. The support portion 3 is a member for supporting the supported object, and is formed of, for example, ceramics. As far as ceramics are concerned, it is the same as the above-mentioned base 2, for example, alumina (also known as bauxite, Alumina) as the main component of ceramics, zirconia (also known as zirconia, Zirconia) as the main component of ceramics, silicon carbide as the main component of ceramics, boron carbide as the main component of ceramics and so on.

基部2之大小係例如依照具備間隔銷1之裝置的大小等而被適當設定。如圖1A所示，在具有圓柱狀之支撐部3的情形，支撐部3之直徑(圖1B的D2)例如約為2mm以上3mm以下。支撐部3之高度(圖1B的H2)例如約為1.2mm以上1.8mm以下。 The size of the base portion 2 is appropriately set according to, for example, the size of the device including the spacer pins 1 . As shown in FIG. 1A , in the case of having the cylindrical support portion 3 , the diameter of the support portion 3 ( D2 in FIG. 1B ) is, for example, about 2 mm or more and 3 mm or less. The height of the support portion 3 (H2 in FIG. 1B ) is, for example, about 1.2 mm or more and 1.8 mm or less.

於有關一實施型態之間隔銷1中，在支撐部3之相接於被支撐物的第4面(以下，有時記載為「支撐面」)的接觸部3a，其橫截程度差(Rδc)之平均值係小於基部2之下表面(基部2之與設有支撐部3之面(上表面)相向之面)。在此，所謂「橫截程度差(Rδc)」係意指表示在粗度曲線之25%的負載長度率之橫截程度、與在粗度曲線之75%的負載長度率之橫截程度的差之橫截程度差(Rδc)。 In the spacer pin 1 according to one embodiment, the contact portion 3a of the support portion 3 that is in contact with the fourth surface of the supported object (hereinafter, sometimes referred to as "support surface") has a poor cross-sectional degree ( The average value of R δ c) is smaller than the lower surface of the base part 2 (the surface of the base part 2 facing the surface (upper surface) on which the support part 3 is provided). Here, the term "transversal degree difference (R δ c)" means the degree of transversal at the 25% load length ratio of the roughness curve and the cross-section at the 75% load length ratio of the roughness curve The difference in degree is the transversal degree difference (R δ c ).

橫截程度差(Rδc)係依據JIS B 0601：2001，可使用雷射顯微鏡(KEYENCE股份有限公司製，超深度色彩3D形狀測定顯微鏡(VK-X1000或其後繼機種))而測定。測定條件係只要使照明方式設定為同軸照明，測定倍率設定為480倍，截止值λs設定為無，截止值λc設定為0.08mm，具有終端效果之修正，且測定範圍設定為710μm×533μm即可。在測定範圍，只要大致等間隔地劃出4條之作為測定對象的線而進行線粗度計測即可。作為計測之對象的每1條線的長度為560μm。橫截程度差(Rδc)之平均值係只要以依每一條線之各者所得到的橫截程度差(Rδc)之測定值作為對象而算出即可。 The cross-sectional degree difference (R δ c) can be measured using a laser microscope (manufactured by KEYENCE Co., Ltd., a super deep color 3D shape measuring microscope (VK-X1000 or its successor)) in accordance with JIS B 0601:2001. The measurement conditions are as long as the illumination method is set to coaxial illumination, the measurement magnification is set to 480 times, the cut-off value λs is set to none, the cut-off value λc is set to 0.08mm, the correction of the terminal effect is provided, and the measurement range is set to 710μm × 533μm. . In the measurement range, it is sufficient to draw four lines to be measured at approximately equal intervals and to measure the line thickness. The length of each line to be measured was 560 μm. The average value of the difference in transverse degree (R δ c) may be calculated by taking the measured value of the difference in transverse degree (R δ c) obtained for each line as an object.

在支撐部3之接觸部3a的橫截程度差(Rδc)之平均值係小於基部2之下表面的橫截程度差(Rδc)之平均值，亦即，在接觸部3a之橫截程度差(Rδc)的平均值比較小，故支撐面之接觸部3a即使接觸被支撐物，亦不易從接觸部3a脫粒。其結果，即使接觸部3a與被支撐物接觸，亦可降低在被支撐物造成刮傷之虞。再者，在基部2之下表面的橫截程度差(Rδc)之平均值比較大，故例如在將間隔銷1接合於裝置等時，可發揮充分的錨定效果。其結果，即使重複進行升溫及降溫，亦不易剝離，並可提高接合可靠性。 The average value of the cross-sectional degree difference (R δ c) of the contact portion 3 a of the support portion 3 is smaller than the average value of the cross-sectional degree difference (R δ c) of the lower surface of the base portion 2 , that is, the average value of the cross-sectional degree difference (R δ c ) of the contact portion 3 a The average value of the difference in transverse degree (R δ c) is relatively small, so even if the contact portion 3a of the support surface contacts the supported object, it is not easy to thresh from the contact portion 3a. As a result, even if the contact portion 3a comes into contact with the object to be supported, the possibility of scratching the object to be supported can be reduced. In addition, the average value of the difference in transverse degree (R δ c ) of the lower surface of the base portion 2 is relatively large, so that, for example, when the spacer pin 1 is joined to a device or the like, a sufficient anchoring effect can be exerted. As a result, even if heating and cooling are repeated, peeling is not easy, and bonding reliability can be improved.

在支撐部3之接觸部3a的橫截程度差(Rδc)之平均值、與在基部2之下表面的橫截程度差(Rδc)之平均值的差，較佳為例如0.05μm以上。若該差為0.05μm以上，則在支撐部3之接觸部3a的橫截程度差(Rδc)之平均值會變成非常小。其結果，不易從接觸部3a脫粒，並可更降低在被支撐物造成刮傷之虞。 The difference between the average value of the cross-sectional degree difference (R δ c ) at the contact portion 3 a of the support portion 3 and the average value of the cross-sectional degree difference (R δ c ) at the lower surface of the base portion 2 is preferably, for example, 0.05 μm or more. If the difference is 0.05 μm or more, the average value of the difference in transverse degree (R δ c ) at the contact portion 3 a of the support portion 3 becomes very small. As a result, it becomes difficult to thresh from the contact part 3a, and the possibility that a to-be-supported object may be scratched can be further reduced.

在基部2之下表面的橫截程度差(Rδc)之平均值較佳為0.2μm以上0.37μm以下。若在基部2之下表面的橫截程度差(Rδc)之平均值為如此的範圍，則可發揮更高的錨定效果，並可更提高接合可靠性。再者，在使間隔銷1接合於裝置等之凹部時，若從基部2之下表面產生的脫粒於不穩定的狀態下被夾在其與凹部之內底面之間，則凹部之內底面與基部2之下表面就不會成為平行。因不易產生如此的脫粒，故脫粒之影響變得更少，且不易損及相對於凹部之內底面的支撐部3之軸心。其結果，可更降低在被支撐物造成刮傷之虞。如此的效果係不限定在接合於凹部的情形，例如，即使不是接合於凹部而是接合於平坦處時，亦會發揮如此的效果。 The average value of the cross-sectional degree difference (R δ c ) of the lower surface of the base portion 2 is preferably 0.2 μm or more and 0.37 μm or less. If the average value of the cross-sectional degree difference (R δ c ) of the lower surface of the base portion 2 is within such a range, a higher anchoring effect can be exhibited, and the bonding reliability can be further improved. Furthermore, when the spacer pin 1 is engaged with the concave part of the device or the like, if the threshing generated from the lower surface of the base part 2 is caught between it and the inner bottom surface of the concave part in an unstable state, the inner bottom surface of the concave part will be The lower surface of the base 2 does not become parallel. Since such threshing is difficult to occur, the influence of the threshing becomes small, and the axis of the support part 3 with respect to the inner bottom surface of the recessed part is less likely to be damaged. As a result, the risk of scratching the object to be supported can be further reduced. Such an effect is not limited to the case where it is joined to the concave portion, and, for example, such an effect is exhibited even when it is not joined to the concave portion but is joined to a flat place.

在支撐部3之相接於被支撐物的支撐面可為燒成面，亦可為研磨面。若支撐面為燒成面，則在支撐面不存在破碎層，會使起因於破碎層而產生的脫粒減少。另一方面，若支撐面為研磨面，則算術平均粗度Ra係小於燒成面。因此，即使接觸被支撐物，亦不易產生大的脫粒。其結果，可更降低在被支撐物造成刮傷之虞。 The support surface of the support part 3 in contact with the object to be supported may be a fired surface or a polished surface. When the support surface is a fired surface, the crushed layer does not exist on the support surface, and the threshing caused by the crushed layer is reduced. On the other hand, when the support surface is a polished surface, the arithmetic mean roughness Ra is smaller than that of the fired surface. Therefore, even if it comes into contact with the supported object, large threshing is unlikely to occur. As a result, it is possible to further reduce the risk of scratching the object to be supported.

在間隔銷1中，無關於橫截程度差(Rδc)，在支撐部3之相接於被支撐物的支撐面之接觸部3a之在粗度曲線之均方根傾斜(R△q)的平均值係可小於基部2之下表面。 In the spacer pin 1, irrespective of the cross-sectional degree difference (R δ c), the root mean square slope of the thickness curve (RΔq) at the contact portion 3a of the support portion 3 abutting on the support surface of the supported object ) may be smaller than the lower surface of the base 2 .

均方根傾斜(R△q)係與橫截程度差(Rδc)之測定條件相同。均方根傾斜(R△q)之平均值係只要以依每一條線之各者所得到的橫截程度差(Rδc)之測定值作為對象而算出即可。 The root-mean-square slope (RΔq) was measured under the same conditions as the transverse degree difference ( Rδc ). The average value of the root mean square slope (RΔq) may be calculated using the measured value of the difference in transverse degree (R δ c ) obtained for each line.

在支撐面之接觸部3a的均方根傾斜(R△q)之平均值係小於在基部2之下表面的均方根傾斜(R△q)之平均值，亦即，在接觸部3a之均方根傾斜(R△q)的平均值比較小，故即使支撐面之接觸部3a接觸被支撐物，亦不易從接觸部3a脫粒。其結果，即使接觸部3a接觸被支撐物，亦可降低在被支撐物造成刮傷之虞。再者，在基部2之下表面的均方根傾斜(R△q)之平均值比較大，故例如在將間隔銷1接合於裝置等時，可發揮充分的錨定效果。其結果，即使重複進行升溫及降溫，亦不易剝離，並可提高接合可靠性。 The average value of the root mean square inclination (RΔq) of the contact portion 3a on the support surface is smaller than the average value of the root mean square inclination (RΔq) of the lower surface of the base portion 2, that is, between the contact portion 3a The average value of the root mean square inclination (RΔq) is relatively small, so even if the contact portion 3a of the support surface contacts the object to be supported, it is difficult to thresh from the contact portion 3a. As a result, even if the contact portion 3a contacts the object to be supported, the possibility of scratching the object to be supported can be reduced. Furthermore, since the average value of the root mean square inclination (RΔq) of the lower surface of the base portion 2 is relatively large, a sufficient anchoring effect can be exhibited, for example, when the spacer pin 1 is joined to a device or the like. As a result, even if heating and cooling are repeated, peeling is not easy, and bonding reliability can be improved.

在支撐面之接觸部3a的均方根傾斜(R△q)之平均值、與在基部2之下表面的均方根傾斜(R△q)之平均值的差，較佳為例如0.08以上。若該差為0.08以上，則在支撐面之接觸部3a的均方根傾斜(R△q)會變成非常小。其結果，不易從接觸部3a脫粒，並可更降低在被支撐物造成刮傷之虞。 The difference between the average value of the root mean square inclination (RΔq) of the contact portion 3a of the support surface and the average value of the root mean square inclination (RΔq) of the lower surface of the base portion 2 is preferably, for example, 0.08 or more. . If the difference is 0.08 or more, the root mean square inclination (RΔq) of the contact portion 3a on the support surface becomes very small. As a result, it becomes difficult to thresh from the contact part 3a, and the possibility that a to-be-supported object may be scratched can be further reduced.

在基部2之下表面的均方根傾斜(R△q)之平均值較佳為0.17以上0.48以下。若在基部2之下表面的均方根傾斜(R△q)之平均值為如此的範圍，則可發揮更高的錨定效果，並可更提高接合可靠性。再者，在使間隔銷1接合於裝置等之凹部時，如上述，因脫粒之影響變得更少，故不易損及相對於凹部之內底面的支撐部3之軸心。其結果，可更降低在被支撐物造成刮傷之虞。 The average value of the root mean square inclination (RΔq) of the lower surface of the base portion 2 is preferably 0.17 or more and 0.48 or less. If the average value of the root mean square inclination (RΔq) of the lower surface of the base portion 2 is within such a range, a higher anchoring effect can be exhibited, and the bonding reliability can be further improved. Moreover, when the spacer pin 1 is engaged with the recessed part of a device etc., since the influence of threshing becomes small as mentioned above, it is hard to damage the axial center of the support part 3 with respect to the inner bottom surface of a recessed part. As a result, it is possible to further reduce the risk of scratching the object to be supported.

即使在支撐面之接觸部3a的均方根傾斜(R△q)之平均值小於在基部2之下表面的均方根傾斜(R△q)之平均值時，亦如上述，在支撐部之相接於被支撐物的支撐面可為燒成面，亦可為研磨面。 Even when the average value of the root mean square inclination (RΔq) of the contact portion 3a of the supporting surface is smaller than the average value of the root mean square inclination (RΔq) of the lower surface of the base 2, as described above, in the supporting portion The supporting surface that is in contact with the supported object may be a fired surface or a polished surface.

接觸部3a係可朝向被支撐物而彎曲成凸狀。經彎曲之接觸部3a的曲率半徑R若例如使用以下之式(1)進行計算，則為3m以上8m以下。 The contact portion 3a may be curved in a convex shape toward the supported object. The radius of curvature R of the curved contact portion 3a is calculated, for example, using the following formula (1), and is 3 m or more and 8 m or less.

R=((W/2)2+h2)/2h‧‧‧(1) R=((W/2) 2 +h 2 )/2h‧‧‧(1)

在此，接觸部3a之寬度W係橫截程度差(Rδc)及均方根傾斜(R△q)之測定範圍的横方向之長度710μm，高度h係相對於連結前述測定範圍內之測定剖面曲線的兩端之直線之測定剖面曲線的最大高度。 Here, the width W of the contact portion 3a is the length of 710 μm in the lateral direction of the measurement range of the cross-sectional degree difference (R δ c ) and the root mean square inclination (RΔq), and the height h is relative to the connection within the aforementioned measurement range. The maximum height of the measurement profile curve of the straight line at both ends of the measurement profile curve.

若接觸部3a之曲率半徑R為3m以上，則接觸部3a會成為平緩的凸狀，故即使接觸於被支撐物，亦可降低容易從接觸部3a產生之大的脫粒之虞。若曲率半徑R為8m以下，則可減少對於被支撐物之接觸面積，故可抑制容易從接觸部3a產生之脫粒的量。 If the curvature radius R of the contact part 3a is 3m or more, the contact part 3a becomes a gentle convex shape, so even if it comes into contact with a supported object, the possibility of large threshing that is easily generated from the contact part 3a can be reduced. If the curvature radius R is 8 m or less, the contact area with respect to the object to be supported can be reduced, so that the amount of threshing that is easily generated from the contact portion 3a can be suppressed.

支撐面可為由DLC膜所構成。在電漿處理空間位於間隔銷1之支撐面側時，若支撐面之導熱率高，則設置於間隔銷1之支撐部3的周圍之構件會因為支撐面之輻射熱而容易膨張。即使藉由電漿處理而在電漿處理空間產生200℃至400℃左右之熱，DLC膜之導熱率仍為低(例如，在20℃之導熱率為1W/(m ‧K)以下)，因此若支撐面由DLC膜所構成，則支撐面之輻射熱會變小，故可抑制被設置於支撐部3之周圍的構件之膨脹。 The support surface may be composed of a DLC film. When the plasma processing space is located on the support surface side of the spacer pin 1 , if the heat conductivity of the support surface is high, the members disposed around the support portion 3 of the spacer pin 1 are likely to expand due to radiant heat from the support surface. Even if the plasma treatment generates heat of about 200°C to 400°C in the plasma treatment space, the thermal conductivity of the DLC film is still low (for example, the thermal conductivity at 20°C is 1 W/(m ‧K) or less), therefore, if the support surface is made of a DLC film, the radiation heat of the support surface is reduced, so that the expansion of the member provided around the support portion 3 can be suppressed.

支撐部3之側面可為由DLC膜所構成。可獲得與上述之效果相同的效果。支撐面之DLC膜的厚度係可大於支撐部3之側面的DLC膜之厚度。若為如此的構成，則由支撐面所產生的隔熱效果會變高。在此，支撐部3為圓柱狀時，支撐部3之側面成為曲面。支撐部3為角柱狀時，支撐部3之側面彼此具有相交的交線。無論何種情形，支撐部3之側面的DLC膜都比支撐面之DLC膜更容易蓄積內部應力。若支撐部3之側面的DLC膜小於支撐面之DLC膜的厚度，則可抑制增加內部應力的蓄積，故可以長期間使用。 The side surface of the support portion 3 may be formed of a DLC film. The same effects as those described above can be obtained. The thickness of the DLC film on the support surface may be greater than the thickness of the DLC film on the side surface of the support portion 3 . If it is such a structure, the heat insulating effect by a support surface will become high. Here, when the support portion 3 is cylindrical, the side surface of the support portion 3 is curved. When the support portion 3 is in the shape of a square column, the side surfaces of the support portion 3 have intersecting lines. In any case, the DLC film on the side surface of the support portion 3 is more likely to accumulate internal stress than the DLC film on the support surface. If the DLC film on the side surface of the support portion 3 is smaller than the thickness of the DLC film on the support surface, the accumulation of increased internal stress can be suppressed, so that it can be used for a long period of time.

支撐面之DLC膜的厚度例如為1μm以上10μm以下。支撐面之DLC膜的厚度、與支撐部3之側面的DLC膜之厚度的差，例如為0.2μm以上0.8μm以下。因與上述之理由相同的理由，基部2之上表面係可為由DLC膜所構成。 The thickness of the DLC film on the support surface is, for example, 1 μm or more and 10 μm or less. The difference between the thickness of the DLC film on the support surface and the thickness of the DLC film on the side surface of the support portion 3 is, for example, 0.2 μm or more and 0.8 μm or less. For the same reason as described above, the upper surface of the base portion 2 may be formed of a DLC film.

基部2之側面係可為由DLC膜所構成。基部2之側面的DLC膜之厚度可小於上表面之DLC膜的厚度。若為如此的構成，則上表面所產生的隔熱效果變高。在此，基部2為圓板狀時，基部2之側面成為曲面。基部2為角柱狀時，基部2之側面彼此具有相交的交線。無論何種情形，基部2之側面的DLC膜都比上表面之DLC膜更容易蓄積內部應力。若基部2之側面的DLC膜小於上表面之DLC膜的厚度，則可抑制增加內部應力的蓄積，故可以長期間使用。 The side surface of the base 2 may be composed of a DLC film. The thickness of the DLC film on the side surface of the base 2 may be smaller than the thickness of the DLC film on the upper surface. If it is such a structure, the heat insulating effect by the upper surface will become high. Here, when the base portion 2 is in the shape of a disk, the side surface of the base portion 2 becomes a curved surface. When the base portion 2 is in the shape of a prism, the side surfaces of the base portion 2 have intersecting lines. In any case, the DLC film on the side surface of the base portion 2 is more likely to accumulate internal stress than the DLC film on the upper surface. If the thickness of the DLC film on the side surface of the base portion 2 is smaller than the thickness of the DLC film on the upper surface, the accumulation of increased internal stress can be suppressed, so that it can be used for a long period of time.

上表面之DLC膜的厚度例如為1μm以上10μm以下。上表面之DLC膜的厚度、與基部2之側面的DLC膜之厚度的差，例如為0.2μm以上0.8μm以下。 The thickness of the DLC film on the upper surface is, for example, 1 μm or more and 10 μm or less. The difference between the thickness of the DLC film on the upper surface and the thickness of the DLC film on the side surface of the base portion 2 is, for example, 0.2 μm or more and 0.8 μm or less.

支撐部3具有DLC膜時，支撐部3可為由以碳化矽作為主成分之陶瓷所構成。同樣地，基部2具有DLC膜時，基部2可為由以碳化矽作為主成分之陶瓷所構成。DLC膜因與碳化矽之密著性良好，故可提高對於以碳化矽作為主成分之陶瓷的密著強度。 When the support portion 3 has a DLC film, the support portion 3 may be made of ceramics mainly composed of silicon carbide. Similarly, when the base portion 2 has a DLC film, the base portion 2 may be composed of ceramics mainly composed of silicon carbide. Since the DLC film has good adhesion to silicon carbide, it can improve the adhesion strength to ceramics mainly composed of silicon carbide.

上述之DLC膜係可包含氬、氦及氫之至少任一者。尤其，若含有氫，則可形成耐熱性與耐蝕性經提升之DLC膜。DLC膜係只要使用拉曼分光分析裝置進行鑑定即可。 The above-mentioned DLC film may contain at least any one of argon, helium and hydrogen. In particular, when hydrogen is contained, a DLC film having improved heat resistance and corrosion resistance can be formed. The DLC film system may be identified using a Raman spectroscopic analyzer.

製造有關一實施型態的間隔銷1之方法並無限定，例如，可依下列之順序製造。形成間隔銷1之陶瓷的主成分為氧化鋁時，例如，可將氧化鋁(純度為99.9質量%以上)、氫氧化鎂、氧化矽、碳酸鈣及氧化鉻之各粉末與溶劑(離子交換水)投入於粉碎用研磨機。 The method of manufacturing the spacer pin 1 of one embodiment is not limited, and for example, it can be manufactured in the following order. When the main component of the ceramics forming the spacer pins 1 is alumina, for example, each powder of alumina (purity of 99.9% by mass or more), magnesium hydroxide, silicon oxide, calcium carbonate, and chromium oxide can be mixed with a solvent (ion-exchanged water). ) into a grinder for pulverization.

然後，進行粉碎，直到粉末之平均粒徑(D50)成為1.5μm以下為止，之後，添加有機結合劑及使氧化鋁粉末分散之分散劑，並進行混合而獲得漿液(slurry)。有機結合劑係例如可列舉丙烯酸系乳劑(acrylic emulsion)、聚乙烯醇、聚乙二醇、聚環氧乙烷(polyethylene oxide)等。 Then, it grind|pulverizes until the average particle diameter (D50) of a powder becomes 1.5 micrometers or less, and then an organic binder and a dispersing agent for dispersing the alumina powder are added and mixed to obtain a slurry. As an organic binder system, an acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide, etc. are mentioned, for example.

在上述粉末之合計100質量%中的氫氧化鎂粉末之含量為0.3質量%以上0.42質量%以下，氧化矽粉末之含量為0.5質量%以上0.8質量%以下，碳酸鈣粉末之含量為0.06質量%以上0.1質量%以下，殘部為氧化鋁粉末及不可避免的雜質。不可避免的雜質之含量的合計係設為0.1質量%以下。 The content of magnesium hydroxide powder in the total 100 mass % of the above powders is 0.3 mass % or more and 0.42 mass % or less, the content of silicon oxide powder is 0.5 mass % or more and 0.8 mass % or less, and the content of calcium carbonate powder is 0.06 mass %. More than 0.1 mass % or less, the remainder is alumina powder and unavoidable impurities. The total content of the unavoidable impurities is made 0.1 mass % or less.

對漿液進行噴霧造粒而獲得顆粒之後，使用單軸壓製成形裝置或者冷等靜壓成形裝置，將成形壓力設為78MPa以上128MPa以下，並進行加壓而 獲得成為間隔銷1之主體的成形體。使該成形體在大氣環境中以1500℃以上1700℃以下及4小時以上6小時以下之條件進行燒成，藉此獲得間隔銷1。 After spray granulation of the slurry to obtain granules, a uniaxial press forming apparatus or a cold isostatic pressing apparatus is used to set the forming pressure to 78 MPa or more and 128 MPa or less, and pressurize to form the granules. A molded body that becomes the main body of the spacer pin 1 is obtained. The spacer pin 1 is obtained by firing the formed body under the conditions of 1500° C. or more and 1700° C. or less and 4 hours or more and 6 hours or less in the atmosphere.

在如此方式所得到之間隔銷1中，支撐面之接觸部3a及基部2之下表面皆為燒成面時，若求得在接觸部3a之橫截程度差(Rδc)的平均值，則為0.2091μm，若求得在基部2之下表面的橫截程度差(Rδc)之平均值，則為0.2682μm。再者，若求得在支撐面之接觸部3a的均方根傾斜(R△q)之平均值，則為0.2121，若求得在基部2之下表面的均方根傾斜(R△q)之平均值，則為0.3041。測定皆使用上述之測定方法。 In the spacer pin 1 obtained in this way, when both the contact portion 3a of the support surface and the lower surface of the base portion 2 are fired surfaces, if the average value of the difference in transverse degree (R δc ) at the contact portion 3a is obtained , then it is 0.2091 μm, and if the average value of the cross-sectional degree difference (R δ c) of the lower surface of the base 2 is obtained, it is 0.2682 μm . Furthermore, if the average value of the root mean square slope (RΔq) of the contact portion 3a of the support surface is obtained, it is 0.2121, and if the root mean square slope (RΔq) of the lower surface of the base portion 2 is obtained The average value is 0.3041. Measurements were performed using the above-mentioned measurement methods.

亦可依照需要，而在所得到之間隔銷1中，將支撐部3之相接於被支撐物的支撐面供給至研磨加工。研磨係例如藉由刷磨、拋光研磨等來進行。 According to need, among the obtained spacer pins 1, the support surface of the support portion 3 in contact with the object to be supported may be supplied to the grinding process. The grinding system is performed, for example, by brush grinding, buff grinding, or the like.

將支撐面進行刷磨時，係在固定間隔銷1之狀態下，使捆紮有10mm左右之長度的刷具而成之輥以50rpm至200rpm左右進行旋轉，同時進行研磨30分鐘至60分鐘。研磨劑係使用在油脂類中添加鑽石粉末所得到的膏漿(paste)，並將該膏漿預先塗佈於刷具。鑽石粉末之平均粒徑例如為0.5μm以上6μm以下。 When brushing the support surface, with the spacer pin 1 fixed, the roller made of brushes with a length of about 10 mm is rotated at about 50 rpm to 200 rpm, and the grinding is performed for 30 to 60 minutes at the same time. As an abrasive, a paste obtained by adding diamond powder to oils and fats is used, and the paste is applied to a brush in advance. The average particle size of the diamond powder is, for example, 0.5 μm or more and 6 μm or less.

為了獲得支撐面之接觸部3a與基部2之下表面的橫截程度差(Rδc)之平均值的差為0.05μm以上之間隔銷1，輥之旋轉速度與研磨時間例如只要如上述進行設定即可。鑽石粉末之平均粒徑例如只要設為0.5μm以上4μm以下即可。 In order to obtain a difference between the average value of the difference in the degree of cross-section (R δ c ) between the contact portion 3 a of the support surface and the lower surface of the base portion 2 to be 0.05 μm or more for the spacer pin 1 , the rotational speed of the roller and the grinding time, for example, only need to be carried out as described above. Set it up. The average particle diameter of the diamond powder may be, for example, 0.5 μm or more and 4 μm or less.

為了獲得支撐面之接觸部3a與基部之下表面的均方根傾斜(R△q)之平均值的差為0.08以上之間隔銷1，輥之旋轉速度與研磨時間係例如只要如上所述即可。鑽石粉末之平均粒徑例如只要設為0.5μm以上3μm以下即可。 In order to obtain the difference between the average value of the root mean square inclination (RΔq) of the contact portion 3a of the support surface and the lower surface of the base to be 0.08 or more for the spacer pin 1, the rotational speed of the roller and the grinding time are as described above, for example. Can. The average particle diameter of the diamond powder may be, for example, 0.5 μm or more and 3 μm or less.

將支撐面進行拋光研磨時，拋光之基材並無限定，例如，可列舉毛氈(felt)、綿帶體、木綿帶體等。研磨劑係例如可列舉鑽石粉末、綠色金剛砂(Green Carborundum，GC)粉末等。只要將此等研磨劑添加於油脂類中，並以膏漿狀態使用即可。 When polishing the support surface, the base material to be polished is not limited, and examples thereof include felt, cotton tape, and wood tape. As an abrasive system, a diamond powder, a green carborundum (Green Carborundum, GC) powder, etc. are mentioned, for example. It is sufficient to add these abrasives to oils and fats and use them in a paste state.

研磨劑之平均粒徑例如為0.5μm以上6μm以下。基材之外徑為150mm，其旋轉速度例如為28m/分鐘以上170m/分鐘以下。研磨時間例如為0.5分鐘以上5分鐘以下。 The average particle diameter of the abrasive is, for example, 0.5 μm or more and 6 μm or less. The outer diameter of the base material is 150 mm, and the rotational speed thereof is, for example, 28 m/min or more and 170 m/min or less. The polishing time is, for example, 0.5 minutes or more and 5 minutes or less.

支撐面為刷磨面，且基部2之下表面為燒成面時，若求得在接觸部3a之橫截程度差(Rδc)的平均值，則為0.0474μm，若求得在基部2之下表面的橫截程度差(Rδc)之平均值，則為0.2982μm。再者，若求得在支撐面之接觸部3a的均方根傾斜(R△q)之平均值，則為0.0761，若求得在基部2之下表面的均方根傾斜(R△q)之平均值，則為0.3223。測定皆使用上述之測定方法。 When the supporting surface is a brushed surface, and the lower surface of the base 2 is a sintered surface, if the average value of the cross-sectional degree difference (R δ c) at the contact portion 3a is obtained, it is 0.0474 μm, and if obtained at the base 2 The average value of the cross-sectional degree difference (R δ c) of the lower surface is 0.2982 μm. Furthermore, if the average value of the root mean square slope (RΔq) of the contact portion 3a of the support surface is obtained, it is 0.0761, and if the root mean square slope (RΔq) of the lower surface of the base portion 2 is obtained The average value is 0.3223. Measurements were performed using the above-mentioned measurement methods.

形成間隔銷之陶瓷的主成分為碳化矽時，首先，就碳化矽粉末而言，準備粗粒狀粉末及微粒狀粉末，並使水及依照需要之分散劑藉由球磨機或珠磨機(bead mill)進行40至60小時的粉碎混合而形成為漿液。在此，經粉碎混合後之微粒狀粉末及粗粒狀粉末的各別之粒徑範圍為0.4μm以上4μm以下、11μm以上34μm以下。其次，在所得到之漿液中添加由碳化硼粉末及非晶質狀之碳粉末或酚樹脂所構成的燒結助劑、及黏結劑並進行混合，之後，進行噴霧乾燥，藉此獲得主成分由碳化矽所構成的顆粒。 When the main component of the ceramics forming the spacer pins is silicon carbide, first, as for the silicon carbide powder, prepare coarse powder and fine powder, and make water and a dispersant as required by a ball mill or a bead mill (bead mill). mill) for 40 to 60 hours of pulverization and mixing to form a slurry. Here, the respective particle diameter ranges of the fine-grained powder and the coarse-grained powder after being pulverized and mixed are 0.4 μm or more and 4 μm or less, and 11 μm or more and 34 μm or less. Next, a sintering aid composed of boron carbide powder, amorphous carbon powder, or phenol resin, and a binder are added to the obtained slurry, mixed, and then spray-dried to obtain the main component Particles made of silicon carbide.

就粗粒狀粉末與微粒狀粉末之質量比率而言，例如，粗粒狀粉末為6質量%以上15質量%以下，微粒狀粉末為85質量%以上94質量%以下。 The mass ratio of the coarse powder to the fine powder is, for example, 6 mass % or more and 15 mass % or less for the coarse powder, and 85 mass % or more and 94 mass % or less for the fine powder.

然後，將顆粒填充於預定之成形模具內，且以在49至147MPa之範圍所適當選擇之壓力從厚度方向進行加壓並成形，而獲得屬於間隔銷之前驅體的成形體。接著，在氮環境中將溫度設為450至650℃、將保持時間設為2至10小時而使所得到之成形體進行脫脂，而獲得脫脂體。 Then, the pellets are filled in a predetermined forming die, and pressed and formed in the thickness direction at a pressure appropriately selected in the range of 49 to 147 MPa to obtain a formed body belonging to the spacer pin precursor. Next, in a nitrogen atmosphere, the temperature is set to 450 to 650° C., and the holding time is set to 2 to 10 hours, and the obtained molded body is degreased to obtain a degreased body.

繼而，藉由在惰性氣體之減壓環境中將最高溫度設為1800℃以上2200℃以下、將保持時間設為3小時以上6小時以下來保持該脫脂體並進行燒成，而獲得間隔銷1。間隔銷以碳化矽作為主成分時，如上述，燒結助劑可為碳化硼粉末及非晶質狀之碳粉末或酚樹脂，燒結助劑可為氧化鋁粉末及稀土類氧化物粉末。稀土類氧化物粉末例如為氧化釔粉末。 Next, the degreased body is held and fired at a maximum temperature of 1800° C. or higher and 2200° C. or lower and a holding time of 3 hours or more and 6 hours or less in an inert gas decompressed atmosphere to obtain a spacer pin 1. . When the spacer pin is mainly composed of silicon carbide, as mentioned above, the sintering aid can be boron carbide powder, amorphous carbon powder or phenol resin, and the sintering aid can be alumina powder and rare earth oxide powder. The rare earth oxide powder is, for example, yttrium oxide powder.

氧化鋁粉末及氧化釔粉末為燒結助劑時，若進行燒結，則會成為以碳化矽作為主成分且含有鋁及釔作為氧化物之陶瓷。該陶瓷係可為以碳化矽作為主成分，並以氧化物換算含有1質量%以上10質量%以下之鋁，以氧化物換算含有1質量%以上10質量%以下之釔。 When alumina powder and yttrium oxide powder are used as sintering aids, when sintered, they will become ceramics containing silicon carbide as a main component and aluminum and yttrium as oxides. The ceramic system may contain silicon carbide as a main component, 1 to 10 mass % of aluminum in terms of oxides, and 1 to 10 mass % of yttrium in terms of oxides.

若氧化鋁粉末及氧化釔粉末為燒結助劑，則燒結會成為液相燒結，並形成粒界相(Grain Boundary Phase)。將鋁及釔換算成氧化物之含量若為上述範圍，則可使導熱率成為50W/(m‧K)以上70W/(m‧K)以下而較為降低。 If alumina powder and yttrium oxide powder are used as sintering aids, the sintering will become liquid phase sintering, and a grain boundary phase (Grain Boundary Phase) will be formed. When the content of aluminum and yttrium in terms of oxides is in the above-mentioned range, the thermal conductivity can be relatively reduced to be 50 W/(m·K) or more and 70 W/(m·K) or less.

在以如此方式所得到之間隔銷1形成DLC膜時，例如，只要使用電漿離子注入成膜法即可。電漿離子注入成膜法係使脈衝生成用之高頻脈衝與離子注入用之負的高電壓脈衝重畳，而在支撐部之周圍產生電漿，以及將電漿中之離子種藉由高電壓脈衝而引入至支撐部之方式。 When forming a DLC film with the spacer pins 1 obtained in this way, for example, a plasma ion implantation film-forming method may be used. The plasma ion implantation film-forming method reconverts the high-frequency pulse for pulse generation and the negative high-voltage pulse for ion implantation, and generates plasma around the support portion, and the ion species in the plasma are subjected to high voltage. The pulse is introduced into the support part.

具體而言，首先，藉由對低壓烴氣體環境中所配置之成膜前的間隔銷施加13.56MHz之脈衝高頻放電電壓，而產生烴氣體電漿中之離子種。在此之後，藉由在餘輝電漿(afterglow plasma)中對間隔銷施加負的高電壓脈衝放電電壓而對間隔銷賦予離子之衝擊，可獲得由DLC膜所構成支撐面、支撐部之側面、基部之上表面、基部之側面等。 Specifically, first, by applying a pulsed high-frequency discharge voltage of 13.56 MHz to a spacer pin before film formation arranged in a low-pressure hydrocarbon gas environment, ion species in the hydrocarbon gas plasma are generated. After that, by applying a negative high-voltage pulse discharge voltage to the spacer pins in an afterglow plasma to give ion impact to the spacer pins, the support surface and the side surface of the support portion formed by the DLC film can be obtained , the upper surface of the base, the side of the base, etc.

在產生烴氣體電漿中之離子種之前，可使用氬、氦、氫等之離子進行電漿清洗(plasma cleaning)處理。藉由該電漿清洗處理，可去除附著於支撐部或基部之雜質等，故可獲得對於支撐部或基部的密著性更高之DLC膜。 A plasma cleaning process may be performed using ions of argon, helium, hydrogen, etc., before generating the ion species in the hydrocarbon gas plasma. By this plasma cleaning treatment, impurities and the like adhering to the support portion or the base portion can be removed, so that a DLC film having higher adhesion to the support portion or the base portion can be obtained.

有關一實施型態之間隔銷1係被採用作為各種之產業用裝置的一構件。如此的產業用裝置例如可列舉熱處理裝置、靜電夾頭裝置、半導體基板之檢査裝置、顯像裝置等。 According to one embodiment, the spacer pin 1 is used as a component of various industrial devices. Such an industrial device includes, for example, a heat treatment device, an electrostatic chuck device, an inspection device for a semiconductor substrate, and a developing device.

熱處理裝置例如具備載置台與有關一實施型態之間隔銷1。有關一實施型態之間隔銷1係以在載置台上設有間隙而載置被支撐物之方式設於載置台上。依據圖2A及2B而更具體地說明有關熱處理裝置。圖2A係表示有關本揭示之一實施型態的熱處理裝置之剖面圖，圖2B係放大圖2A之A部的剖面圖。 The heat treatment apparatus includes, for example, a mounting table and a spacer pin 1 related to one embodiment. According to one embodiment, the spacer pin 1 is provided on the mounting table so that the supported object is mounted with a gap on the mounting table. The heat treatment apparatus will be described in more detail with reference to FIGS. 2A and 2B . FIG. 2A is a cross-sectional view showing a heat treatment apparatus according to an embodiment of the present disclosure, and FIG. 2B is an enlarged cross-sectional view of part A of FIG. 2A .

熱處理裝置10係具有對晶圓W進行加熱處理之處理室11。處理室11係具有：載置晶圓W之載置台12、使晶圓W在載置台12上進行升降之升降銷13、及遮蔽外氣之檔門14。 The thermal processing apparatus 10 has a processing chamber 11 for thermally processing the wafer W. As shown in FIG. The processing chamber 11 includes a mounting table 12 on which the wafer W is mounted, lift pins 13 for moving the wafer W up and down on the mounting table 12 , and a shutter 14 for shielding outside air.

檔門14係藉由缸體15之作動而上升或下降。若檔門14上升，則檔門14係接觸被安裝於蓋體16之下部的制動器(stopper)17，而處理室11成為封閉的空間。在制動器17係設有給氣口(未圖示)，從該給氣口流入於處理室11內之 空氣係從形成於處理室11之上部中央的排氣口18被排出。從給氣口所流入之空氣係不直接接觸晶圓W，而是可以預定之溫度對晶圓W進行加熱處理。 The door 14 is moved up or down by the actuation of the cylinder 15 . When the shutter 14 is raised, the shutter 14 comes into contact with a stopper 17 attached to the lower part of the cover body 16, and the processing chamber 11 becomes a closed space. The brake 17 is provided with an air supply port (not shown), and the air supply port flows into the processing chamber 11 from the air supply port. The air is exhausted from the exhaust port 18 formed in the center of the upper part of the processing chamber 11 . The air flowing in from the air supply port does not directly contact the wafer W, but can heat the wafer W at a predetermined temperature.

載置台12為大於晶圓W之圓板狀，且內藏有對晶圓W進行加熱之加熱器19。間隔銷1係以在載置台12上設有間隙而載置晶圓W之方式設於載置台12，可抑制從載置台12之載置面產生的微粒子附著於晶圓W。 The stage 12 has a disk shape larger than the wafer W, and has a heater 19 for heating the wafer W therein. The spacer pins 1 are provided on the mounting table 12 so that the wafer W is mounted with a gap on the mounting table 12 , and can prevent particles generated from the mounting surface of the mounting table 12 from adhering to the wafer W.

如圖2B所示，間隔銷1係包含：基部2，係被安裝於設在載置台12之載置面的凹部12a內；及支撐部3，係設於該基部2之上表面且支撐晶圓W；且可減少從間隔銷1賦予至晶圓W的熱及從載置台12之載置面賦予至晶圓W的熱之差。 As shown in FIG. 2B , the spacer pin 1 includes: a base 2 mounted in a recess 12a provided on the mounting surface of the mounting table 12; and a support 3 provided on the upper surface of the base 2 and supporting the crystal circle W; and the difference between the heat imparted to the wafer W from the spacer pins 1 and the heat imparted to the wafer W from the mounting surface of the mounting table 12 can be reduced.

具體而言，係在凹部12a內之基部2的上方之空間S埋設保持構件20，以減少載置台12與間隔銷1之間的熱梯度。保持構件20可為以與載置台12相同的材料形成。若為具有與載置台12同程度之導熱率，亦可使用其他之材料。載置台12與晶圓W之間隙例如為0.1mm以上0.3mm以下。 Specifically, the holding member 20 is embedded in the space S above the base 2 in the recess 12 a to reduce the thermal gradient between the mounting table 12 and the spacer pins 1 . The holding member 20 may be formed of the same material as the mounting table 12 . Other materials may be used as long as they have the same degree of thermal conductivity as the mounting table 12 . The gap between the mounting table 12 and the wafer W is, for example, 0.1 mm or more and 0.3 mm or less.

升降銷13的下部被固定於連結導桿22，且連結導桿22被連結於正時皮帶23。正時皮帶23係被掛設於藉由步進馬達24驅動之驅動皮帶輪25、及配置於驅動皮帶輪25之上方的從動皮帶輪26。藉由改變步進馬達24之旋轉方向，升降銷13係可在設於載置台12之圓周方向的貫通孔21內進行上升或者下降，並可在以2點鏈線表示之位置支撐晶圓W，或者，將晶圓W載置於載置台12上。 The lower part of the lift pin 13 is fixed to the connection guide rod 22 , and the connection guide rod 22 is connected to the timing belt 23 . The timing belt 23 is hung on a drive pulley 25 driven by a stepping motor 24 and a driven pulley 26 disposed above the drive pulley 25 . By changing the rotation direction of the stepping motor 24, the lift pins 13 can be raised or lowered in the through holes 21 provided in the circumferential direction of the stage 12, and the wafer W can be supported at the position indicated by the 2-dot chain line. Alternatively, the wafer W is placed on the mounting table 12 .

有關本揭示之靜電夾頭裝置係例如具備：載置台、聚焦環及有關一實施型態之間隔銷1。聚焦環係位於載置台之周圍。聚焦環係具備：沿著圓周所設之固定部、及與該固定部設於同心圓上且可在上下方向移位之可動部。 在該固定部之上表面具備有關一實施型態之間隔銷1。依據圖3A及3B而更具體地說明有關本揭示之靜電夾頭裝置。 The electrostatic chuck device according to the present disclosure includes, for example, a mounting table, a focus ring, and a spacer pin 1 according to an embodiment. The focus ring is located around the stage. The focus ring is provided with: a fixed part provided along the circumference, and a movable part which is provided on a concentric circle with the fixed part and can be displaced in the up-down direction. The upper surface of the fixing portion is provided with a spacer pin 1 according to an embodiment. The electrostatic chuck device of the present disclosure is described in more detail with reference to FIGS. 3A and 3B .

圖3A係表示有關本揭示之一實施型態的靜電夾頭裝置之立體圖，並表示在載置台上載置被支撐物之狀態。圖3B係表示有關本揭示之一實施型態的靜電夾頭裝置之立體圖，並表示從載置台舉起被支撐物之狀態。 3A is a perspective view showing an electrostatic chuck device according to an embodiment of the present disclosure, and shows a state in which a supported object is placed on a placing table. 3B is a perspective view showing an electrostatic chuck device according to an embodiment of the present disclosure, and shows a state in which a supported object is lifted from a mounting table.

圖3A及3B所示之靜電夾頭裝置30係具有搭載載置台31之保持部32。載置台31係具有載置晶圓W之載置面31a。 The electrostatic chuck device 30 shown in FIGS. 3A and 3B has a holding portion 32 on which the stage 31 is mounted. The mounting table 31 has a mounting surface 31 a on which the wafer W is mounted.

保持部32係圓板狀，且配置於與載置台31側為相反側處(靜電吸附用電極(未圖示)之下方)。保持部32係冷卻載置台31而調整成所希望之溫度。保持部32係在其內部具備使水進行循環之流路(未圖示)。保持部32係例如由鋁、鋁合金、銅、銅合金、不銹鋼(SUS)、鈦等所構成。在電漿空間使用靜電夾頭裝置30時，保持部32之至少曝露於電漿的面可形成為氧化鋁等之絕緣膜。 The holding portion 32 is disc-shaped, and is disposed on the opposite side to the mounting table 31 side (below the electrostatic adsorption electrode (not shown)). The holding portion 32 is adjusted to a desired temperature by cooling the mounting table 31 . The holding portion 32 is provided with a flow path (not shown) for circulating water therein. The holding portion 32 is made of, for example, aluminum, aluminum alloy, copper, copper alloy, stainless steel (SUS), titanium, or the like. When the electrostatic chuck device 30 is used in the plasma space, at least the surface of the holding portion 32 exposed to the plasma may be formed of an insulating film such as alumina.

如圖3A所示，聚焦環33係具有：位於上側之上部環34、及位於上部環34之下側的下部環35。上部環34係具備：沿著圓周所設之固定部37、及與該固定部設於同心圓上且可在上下方向移位之可動部36。 As shown in FIG. 3A , the focus ring 33 includes an upper ring 34 located on the upper side and a lower ring 35 located on the lower side of the upper ring 34 . The upper ring 34 includes a fixed portion 37 provided along the circumference, and a movable portion 36 provided on a concentric circle with the fixed portion and capable of being displaced in the vertical direction.

如圖3B所示，若升降銷38進行上升，則可動部36係進行上升而舉起晶圓W。在可動部36之下表面係設有定位孔(未圖示)，而該定位孔係嵌合於設在下部環35之上表面的間隔銷1。藉由設有間隔銷1及定位孔，若可動部36與升降銷38一起進行下降，則可動部36係被定位於下部環35。另一方面，固定部37係被固定於下部環35。 As shown in FIG. 3B , when the lift pins 38 are raised, the movable portion 36 is raised to lift the wafer W. As shown in FIG. A positioning hole (not shown) is formed on the lower surface of the movable portion 36 , and the positioning hole is fitted into the spacer pin 1 provided on the upper surface of the lower ring 35 . By providing the spacer pin 1 and the positioning hole, when the movable portion 36 descends together with the lift pins 38 , the movable portion 36 is positioned on the lower ring 35 . On the other hand, the fixing portion 37 is fixed to the lower ring 35 .

可動部36係在其兩端具有呈開口之開口部36b，且從俯視觀看為C字狀。當可動部36不移動時，從俯視觀看，固定部37係位於開口部36b內。圖3A所示之靜電夾頭裝置30為可動部36在周方向之兩端部相接於固定部37。圖3B所示之靜電夾頭裝置30為可動部36之開口部36b呈開放。圖3B所示之狀態中，係可使輸送晶圓W之輸送手臂等的輸送機構(未圖示)從徑方向之外側插入於開口部36b。可動部36係在周方向之兩端部皆具有朝向下側傾斜之第5面36a。 The movable portion 36 has openings 36b at both ends thereof, and is C-shaped when viewed from above. When the movable portion 36 does not move, the fixed portion 37 is positioned in the opening portion 36b when viewed from above. In the electrostatic chuck device 30 shown in FIG. 3A , both ends of the movable portion 36 in the circumferential direction are in contact with the fixed portion 37 . In the electrostatic chuck device 30 shown in FIG. 3B , the opening 36 b of the movable portion 36 is open. In the state shown in FIG. 3B , a conveyance mechanism (not shown) such as a conveyance arm that conveys the wafer W can be inserted into the opening 36b from the outside in the radial direction. The movable portion 36 has a fifth surface 36a inclined downward at both end portions in the circumferential direction.

固定部37係在周方向之兩端部皆具有朝向上側傾斜之第6面37a。在穩定狀態(steady state)中，第5面36a與第6面37a係藉由互相之傾斜面而在上下方向互相重疊。若第5面36a與第6面37a如此地重疊，則可動部36與固定部37之接觸部係成為斜向而延伸之狀態。若接觸部斜向而延伸，則會使電漿侵入之路徑變長，故可抑制電漿侵入於可動部36與固定部37之間隙。 The fixing portion 37 has a sixth surface 37a inclined toward the upper side at both end portions in the circumferential direction. In a steady state, the fifth surface 36a and the sixth surface 37a overlap each other in the up-down direction by the mutually inclined surfaces. When the fifth surface 36a and the sixth surface 37a overlap in this way, the contact portion between the movable portion 36 and the fixed portion 37 is in a state of extending obliquely. If the contact portion extends obliquely, the path through which the plasma penetrates becomes longer, so that the penetration of the plasma into the gap between the movable portion 36 and the fixed portion 37 can be suppressed.

因此，可抑制因電漿之侵蝕所造成的可動部36與固定部37之間隙的擴展，並可長期間使用靜電夾頭裝置1。相對於水平方向之第5面36a及第6面37a的傾斜角較佳係設為45°以下。藉由將第5面36a及第6面37a之傾斜角設為該範圍，可使電漿更不易侵入於可動部36與固定部37之間隙。 Therefore, the expansion of the gap between the movable portion 36 and the fixed portion 37 caused by the erosion of plasma can be suppressed, and the electrostatic chuck device 1 can be used for a long period of time. It is preferable that the inclination angle with respect to the 5th surface 36a and the 6th surface 37a of a horizontal direction shall be 45 degrees or less. By setting the inclination angle of the fifth surface 36 a and the sixth surface 37 a to this range, the plasma can be less likely to penetrate into the gap between the movable portion 36 and the fixed portion 37 .

有關本揭示之間隔銷係不限定於上述之一實施型態。例如，在上述之間隔銷1中，從俯視觀看，基部2係具有圓形狀。然而，基部2係不限定於圓形狀。例如，依照所希望之用途等，基部2從俯視觀看可為橢圓形狀，亦可具有三角形狀、四角形狀、五角形狀、六角形狀等之多角形狀。關於支撐部3，亦不限定於圓柱狀。例如，依照所希望之用途等，支撐部3可為橢圓柱狀，亦可具有三角柱狀、四角柱狀、五角柱狀、六角柱狀等之角柱狀。 The spacer pins related to the present disclosure are not limited to the above-mentioned one embodiment. For example, in the spacer pin 1 described above, the base 2 has a circular shape when viewed from above. However, the base portion 2 is not limited to a circular shape. For example, the base 2 may have an elliptical shape in plan view, or may have a polygonal shape such as a triangular shape, a quadrangular shape, a pentagonal shape, and a hexagonal shape, depending on the intended use or the like. The support portion 3 is also not limited to a columnar shape. For example, the support portion 3 may have an elliptical columnar shape, or a square columnar shape such as a triangular columnar shape, a quadrangular columnar shape, a pentagonal columnar shape, and a hexagonal columnar shape, depending on the intended use or the like.

再者，上述之間隔銷1的製造方法係說明使基部2與支撐部3一體成形之方法。然而，有關本揭示之間隔銷係亦可以下列方式製造：在使基部2與支撐部3分別成形並進行燒成之後，接合基部2與支撐部3。接合方法並無限定，例如，可列舉擴散接合等。 In addition, the manufacturing method of the spacer pin 1 described above is a description of a method of integrally molding the base portion 2 and the support portion 3 . However, the spacer pin system related to the present disclosure can also be manufactured in the following manner: after the base portion 2 and the support portion 3 are separately formed and fired, the base portion 2 and the support portion 3 are joined together. The bonding method is not limited, and for example, diffusion bonding and the like can be mentioned.

1:間隔銷 1: Spacer pin

2:基部 2: base

3:支撐部 3: Support part

3a:接觸部 3a: Contact part

Claims (15)

一種間隔銷，係包含： A spacer pin comprising: 基部，係具有第1面、及位於該第1面之相反側的第2面； a base having a first surface and a second surface on the opposite side of the first surface; 支撐部，係位於前述第1面上，且具有第3面及第4面，該第3面係與前述第1面相向，該第4面係位於該第3面之相反側且包含與被支撐物接觸之接觸部；且 The support part is located on the first surface, and has a third surface and a fourth surface, the third surface is opposite to the first surface, and the fourth surface is located on the opposite side of the third surface and includes and is the contact portion where the support contacts; and 前述接觸部之橫截程度差(Rδc)的平均值係小於前述第2面，該橫截程度差(Rδc)係表示在粗度曲線之25%的負載長度率之橫截程度、與在前述粗度曲線之75%的負載長度率之橫截程度的差。 The average value of the cross-sectional degree difference (R δ c) of the contact portion is smaller than that of the second surface, and the cross-sectional degree difference (R δ c) represents the cross-sectional degree of the 25% load length ratio of the roughness curve. , and the difference in the degree of cross-section at the 75% load length ratio of the aforementioned roughness curve. 如請求項1所述之間隔銷，其中，前述第2面之前述橫截程度差(Rδc)的平均值為0.2μm以上0.37μm以下。 The spacer pin according to claim 1, wherein the average value of the transverse degree difference (R δ c ) of the second surface is 0.2 μm or more and 0.37 μm or less. 如請求項1或2所述之間隔銷，其中，前述接觸部與前述第2面之橫截程度差(Rδc)的平均值之差為0.05μm以上。 The spacer pin according to claim 1 or 2, wherein the difference between the average value of the difference in transverse degree (R δ c ) between the contact portion and the second surface is 0.05 μm or more. 一種間隔銷，係包含： A spacer pin comprising: 基部，係具有第1面、及位於該第1面之相反側的第2面； a base having a first surface and a second surface on the opposite side of the first surface; 支撐部，係位於前述第1面上，且具有第3面及第4面，該第3面係與前述第1面相向，該第4面係位於該第3面之相反側且包含與被支撐物接觸之接觸部； The support part is located on the first surface, and has a third surface and a fourth surface, the third surface is opposite to the first surface, and the fourth surface is located on the opposite side of the third surface and includes and is the contact part where the support contacts; 前述接觸部之在粗度曲線之均方根傾斜(R△q)的平均值係小於前述第2面。 The average value of the root mean square inclination (RΔq) of the thickness curve of the contact portion is smaller than that of the second surface. 如請求項4所述之間隔銷，其中，前述第2面的均方根傾斜(R△q)之平均值為0.17以上0.48以下。 The spacer pin according to claim 4, wherein the average value of the root mean square inclination (RΔq) of the second surface is 0.17 or more and 0.48 or less. 如請求項4或5所述之間隔銷，其中，前述接觸部與前述第2面之均方根傾斜(R△q)的平均值之差為0.08以上。 The spacer pin according to claim 4 or 5, wherein the difference between the average value of the root mean square inclination (RΔq) of the contact portion and the second surface is 0.08 or more. 如請求項1至6中任一項所述之間隔銷，其中，前述第4面為研磨面。 The spacer pin according to any one of claims 1 to 6, wherein the fourth surface is a ground surface. 如請求項1至6中任一項所述之間隔銷，其中，前述第4面為燒成面。 The spacer pin according to any one of claims 1 to 6, wherein the fourth surface is a fired surface. 如請求項1至6中任一項所述之間隔銷，其中，前述第4面為由DLC膜所構成。 The spacer pin according to any one of claims 1 to 6, wherein the fourth surface is made of a DLC film. 如請求項9所述之間隔銷，其中，前述支撐部之側面為由DLC膜所構成，且前述第4面之DLC膜的厚度係大於前述支撐部之側面的DLC膜之厚度。 The spacer pin according to claim 9, wherein the side surface of the support portion is made of DLC film, and the thickness of the DLC film on the fourth side is greater than the thickness of the DLC film on the side surface of the support portion. 如請求項1至10中任一項所述之間隔銷，其中，前述第1面為由DLC膜所構成。 The spacer pin according to any one of claims 1 to 10, wherein the first surface is made of a DLC film. 如請求項11所述之間隔銷，其中，前述基部之側面為由DLC膜所構成，且前述第1面之DLC膜的厚度係大於前述基部之側面的DLC膜之厚度。 The spacer pin according to claim 11, wherein the side surface of the base portion is formed of a DLC film, and the thickness of the DLC film on the first side is greater than the thickness of the DLC film on the side surface of the base portion. 如請求項1至12中任一項所述之間隔銷，其中，前述支撐部及前述基部之至少任一者係由以碳化矽作為主成分之陶瓷所構成。 The spacer pin according to any one of claims 1 to 12, wherein at least one of the support portion and the base portion is made of ceramics with silicon carbide as a main component. 一種熱處理裝置，係具備載置台、及請求項1至13中任一項所述之間隔銷；且 A heat treatment device comprising a mounting table and a spacer pin according to any one of claims 1 to 13; and 前述間隔銷係以在前述載置台上設有間隙而載置被支撐物之方式設於前述載置台上。 The said spacer pin is provided on the said mounting table so that a to-be-supported object may be mounted by providing a clearance gap on the said mounting table. 一種靜電夾頭裝置，係具備載置台、及位於該載置台之周圍的聚焦環； An electrostatic chuck device is provided with a mounting table and a focus ring located around the mounting table; 該聚焦環係具有上部環及下部環，該上部環係具備沿著圓周所設之固定部、及與該固定部設於同心圓上且可在上下方向移位之可動部，該下部環係位於該上部環之下側； The focusing ring has an upper ring and a lower ring, the upper ring is provided with a fixed part along the circumference, and a movable part arranged on a concentric circle with the fixed part and can be displaced in the up-down direction, the lower ring is on the underside of the upper ring; 在前述下部環之上表面具備請求項1至14中任一項之間隔銷。 The upper surface of the aforementioned lower ring is provided with a spacer pin between any one of Claims 1 to 14.
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