JP7398011B2 - gap pin - Google Patents

Description

TECHNICAL FIELD The present invention relates to gap pins.

2. Description of the Related Art Conventionally, heat treatment apparatuses have been used to heat-treat objects to be processed, such as semiconductor wafers and LCD substrates, on a mounting table. As such a heat treatment apparatus, Patent Document 1 describes a mounting table having a heat source; a gap pin that supports the object to be processed on the mounting table with a gap; and a gap pin that penetrates the mounting table and supports the object to be processed. A heat treatment apparatus is described that includes a liftable support pin placed above the gap pin and movable above the gap pin. The heat treatment apparatus described in Patent Document 1 radiates heat generated from a heat source from the surface of a mounting table to perform heat treatment on an object to be treated.

Japanese Patent Application Publication No. 2003-22947

A gap pin according to the present disclosure includes a base having a first surface and a second surface located opposite to the first surface, and a third surface located on the first surface and opposite to the first surface. and a fourth surface that is located opposite to the third surface and includes a contact portion with the supported body. The contact area has an average value of the cut level difference (Rδc) representing the difference between the cut level at a load length rate of 25% in the roughness curve and the cut level at a load length rate of 75% in the roughness curve. is smaller than the second side.

Another gap pin according to the present disclosure includes a base having a first surface and a second surface located opposite to the first surface, and a third surface located on the first surface and opposite to the first surface. and a fourth surface that is located opposite to the third surface and includes a contact portion with the supported body. The contact portion has a smaller average value of the root mean square slope (RΔq) in the roughness curve than the second surface.

A heat treatment apparatus according to the present disclosure includes a mounting table and the gap pin described above. The gap pin is provided on the mounting table so that the object to be supported is placed on the mounting table with a gap provided therebetween.

An electrostatic chuck device according to the present disclosure includes a mounting table and a focus ring located around the mounting table. The focus ring includes a fixed part provided along the circumference, and a movable part provided concentrically with the fixed part and movable in the vertical direction. A gap pin is provided on the top surface of the fixing part.

FIG. 2 is a perspective view showing a gap pin according to an embodiment of the present disclosure. FIG. 2 is a side view showing a gap pin according to an embodiment of the present disclosure. FIG. 1 is a cross-sectional view showing a heat treatment apparatus according to an embodiment of the present disclosure. FIG. 2B is an enlarged cross-sectional view of section A in FIG. 2A. FIG. 1 is a perspective view showing an electrostatic chuck device according to an embodiment of the present disclosure, showing a state in which a supported object is placed on a mounting table. 1 is a perspective view showing an electrostatic chuck device according to an embodiment of the present disclosure, showing a state in which a supported object is lifted from a mounting table.

If the gap pin described in Patent Document 1 is made of ceramic such as aluminum oxide, for example, there is a problem in that the gap pin is likely to damage the object to be processed by coming into contact with the object. Therefore, there is a need for a gap pin that can reduce the risk of damaging the object to be processed even if it comes into contact with the object.

In the gap pin according to the present disclosure, the average value of the cutting level difference (Rδc) or the average value of the root mean square slope (RΔq) of the contact portion of the support surface in contact with the supported body in the support portion is small. Therefore, it becomes difficult for grains to fall off from the contact area. Therefore, according to the gap pin according to the present disclosure, even if it comes into contact with a supported object, it is possible to reduce the risk of damaging the supported object.

A gap pin according to an embodiment of the present disclosure will be described in detail based on FIGS. 1A and 1B. FIG. 1A is a perspective view showing a gap pin 1 according to an embodiment of the present disclosure. A gap pin 1 according to an embodiment shown in FIG. 1A includes a base portion 2 and a support portion 3.

The base 2 has a first surface (hereinafter also referred to as an upper surface) and a second surface (hereinafter also referred to as a lower surface) located opposite to the first surface, and is, for example, a plate-shaped member. The base 2 shown in FIG. 1A has a circular shape when viewed from above. The base portion 2 is a member for fixing a support portion 3, which will be described later, and is made of, for example, ceramics. Ceramics are not limited, and include, for example, ceramics whose main component is aluminum oxide (alumina), ceramics whose main component is zirconium oxide (zirconia), ceramics whose main component is silicon carbide, and ceramics whose main component is boron carbide. Examples include.

As used herein, the term "main component" refers to a component that accounts for 80% by mass or more of the total 100% by mass of the components constituting the ceramic. Components constituting ceramics can be identified using an X-ray diffraction device using CuKα rays. The content of each component can be determined using, for example, an ICP (Inductively Coupled Plasma) emission spectrometer or a fluorescent X-ray analyzer.

In particular, when the gap pin 1 is made of ceramics whose main component is aluminum oxide (alumina), the content of aluminum oxide (alumina) is preferably 99.6% by mass or more.

The size of the base 2 is appropriately set depending on, for example, the size of the device including the gap pin 1. As shown in FIG. 1A, when the base 2 has a circular shape when viewed from above, the diameter (D1) of the base 2 (FIG. 1B) is, for example, about 3.5 mm or more and 6.5 mm or less. The height of the base 2 (H1 in FIG. 1B) is, for example, about 0.5 mm or more and 1.1 mm or less.

The support portion 3 has a third surface opposite to the first surface (upper surface) of the base portion 2 and a fourth surface located opposite to the third surface, and is, for example, a columnar member. The support portion 3 shown in FIG. 1A has a cylindrical shape. The support part 3 is a member for supporting a supported body, and is made of ceramics, for example. Similar to the base 2 described above, examples of ceramics include ceramics whose main component is aluminum oxide (alumina), ceramics whose main component is zirconium oxide (zirconia), ceramics whose main component is silicon carbide, and ceramics whose main component is boron carbide. Examples include ceramics as a component.

The size of the base 2 is appropriately set depending on, for example, the size of the device including the gap pin 1. As shown in FIG. 1A, in the case of the support portion 3 having a cylindrical shape, the diameter of the support portion 3 (D2 in FIG. 1B) is, for example, about 2 mm or more and 3 mm or less. The height of the support portion 3 (H2 in FIG. 1B) is, for example, about 1.2 mm or more and 1.8 mm or less.

In the gap pin 1 according to one embodiment, the contact portion 3a of the fourth surface of the support portion 3 that contacts the supported object (hereinafter, may be referred to as “support surface”) is located on the lower surface of the base 2 (on the base 2). , the average value of the cutting level difference (Rδc) is smaller than that of the surface on which the support portion 3 is provided (the surface facing the upper surface). Here, the "cutting level difference (Rδc)" represents the difference between the cutting level at a load length ratio of 25% on the roughness curve and the cutting level at a load length ratio of 75% on the roughness curve. It means the cutting level difference (Rδc).

The cutting level difference (Rδc) can be measured using a laser microscope (manufactured by Keyence Corporation, ultra-deep color 3D shape measuring microscope (VK-X1000 or its successor model)) in accordance with JIS B 0601:2001. can. The measurement conditions were as follows: the illumination method was coaxial lighting, the measurement magnification was 480 times, there was no cutoff value λs, the cutoff value λc was 0.08 mm, the end effect was corrected, and the measurement range was 710 μm x 533 μm. Bye. Line roughness measurement may be performed by drawing four lines to be measured at approximately equal intervals in the measurement range. The length of each line to be measured is 560 μm. The average value of the cutting level difference (Rδc) may be calculated using the measured values of the cutting level difference (Rδc) obtained for each line.

The average value of the cutting level difference (Rδc) at the contact part 3a of the support part 3 is smaller than the average value of the cutting level difference (Rδc) at the lower surface of the base 2, that is, the average value of the cutting level difference (Rδc) at the contact part 3a Since the average value is relatively small, even if the contact portion 3a of the support surface contacts the supported object, grains are difficult to shed from the contact portion 3a. As a result, even if the contact portion 3a comes into contact with the supported object, the possibility of damaging the supported object can be reduced. Furthermore, since the average value of the cutting level difference (Rδc) on the lower surface of the base portion 2 is relatively large, a sufficient anchoring effect is exhibited when, for example, the gap pin 1 is joined to a device or the like. As a result, even if the temperature is repeatedly raised and lowered, it is difficult to peel off and the bonding reliability can be improved.

The difference between the average value of the cutting level difference (Rδc) at the contact portion 3a of the support portion 3 and the average value of the cutting level difference (Rδc) at the lower surface of the base portion 2 is preferably 0.05 μm or more, for example. When this difference is 0.05 μm or more, the average value of the cutting level difference (Rδc) at the contact portion 3a of the support portion 3 becomes sufficiently small. As a result, it becomes more difficult for particles to fall off from the contact portion 3a, and the possibility of damaging the supported body can be further reduced.

The average value of the cutting level difference (Rδc) on the lower surface of the base 2 is preferably 0.2 μm or more and 0.37 μm or less. When the average value of the cutting level difference (Rδc) on the lower surface of the base portion 2 is within such a range, a higher anchoring effect is exhibited and bonding reliability can be further improved. Furthermore, when bonding the gap pin 1 to a recess of a device, etc., if the grains generated from the lower surface of the base 2 are caught between the inner bottom surface of the recess and the inner bottom surface of the recess in an unstable state, the inner bottom surface of the recess and the lower surface of the base 2 may are not parallel. Since such shedding is less likely to occur, the influence of shedding is further reduced, and the axis of the support portion 3 with respect to the inner bottom surface of the recess is less likely to be damaged. As a result, the risk of damaging the supported body can be further reduced. Such an effect is not limited to the case where it is bonded to a recessed portion, but is also exhibited when, for example, it is bonded to a flat place other than a recessed portion.

The support surface of the support portion 3 that comes into contact with the supported object may be a fired surface or a polished surface. When the supporting surface is a fired surface, no crushed layer is present on the supporting surface, and the shedding caused by the crushed layer is reduced. On the other hand, if the support surface is a polished surface, the arithmetic mean roughness Ra will be smaller than that of the fired surface. Therefore, even if it comes into contact with a supported body, large shedding is less likely to occur. As a result, the risk of damaging the supported body can be further reduced.

In the gap pin 1, regardless of the cutting level difference (Rδc), the contact portion 3a of the support surface in contact with the supported body in the support portion 3 has a root mean square slope (RΔq ) may be small.

The root mean square slope (RΔq) is the same as the measurement condition for the cutting level difference (Rδc). The average value of the root mean square slope (RΔq) may be calculated using the measured values of the cutting level difference (Rδc) obtained for each line.

The average value of the root mean square slope (RΔq) at the contact portion 3a of the support surface is smaller than the average value of the root mean square slope (RΔq) at the lower surface of the base 2, that is, the root mean square slope at the contact portion 3a Since the average value of the inclination (RΔq) is relatively small, even if the contact portion 3a of the support surface contacts the supported object, grains are difficult to shed from the contact portion 3a. As a result, even if the contact portion 3a comes into contact with the supported object, the possibility of damaging the supported object can be reduced. Furthermore, since the average value of the root mean square slope (RΔq) on the lower surface of the base portion 2 is relatively large, a sufficient anchoring effect is exhibited when, for example, the gap pin 1 is joined to a device or the like. As a result, even if the temperature is repeatedly raised and lowered, it is difficult to peel off and the bonding reliability can be improved.

The difference between the average value of the root mean square slope (RΔq) at the contact portion 3a of the support surface and the average value of the root mean square slope (RΔq) at the lower surface of the base 2 is, for example, 0.08 or more. good. When this difference is 0.08 or more, the root mean square slope (RΔq) at the contact portion 3a of the support surface becomes sufficiently small. As a result, it becomes more difficult for particles to fall off from the contact portion 3a, and the possibility of damaging the supported body can be further reduced.

The average value of the root mean square slope (RΔq) on the lower surface of the base 2 is preferably 0.17 or more and 0.48 or less. When the average value of the root mean square slope (RΔq) on the lower surface of the base portion 2 is within such a range, a higher anchoring effect is exhibited, and joint reliability can be further improved. Furthermore, when the gap pin 1 is joined to a recess of a device or the like, the influence of grain shedding is reduced as described above, so that the axis of the support part 3 with respect to the inner bottom surface of the recess is less likely to be damaged. As a result, the risk of damaging the supported body can be further reduced.

Even if the average value of the root mean square slope (RΔq) at the contact portion 3a of the support surface is smaller than the average value of the root mean square slope (RΔq) at the lower surface of the base 2, as described above, The support surface in contact with the supported object in the support portion may be a fired surface or a polished surface.

The contact portion 3a may be curved in a convex shape toward the supported object. The radius of curvature R of the curved contact portion 3a is, for example, 3 m or more and 8 m or less when calculated using the following equation (1).
R=((W/2) ² +h ² )/2h...(1)

Here, the width W of the contact portion 3a is 710 μm, which is the length in the lateral direction of the measurement range of the cutting level difference (Rδc) and the root mean square slope (RΔq), and the height h is the measurement cross section within the measurement range. This is the maximum height of the measured cross-sectional curve with respect to the straight line connecting both ends of the curve.

When the radius of curvature R of the contact portion 3a is 3 m or more, the contact portion 3a has a gentle convex shape, so even if it contacts the supported object, it is possible to reduce the risk of large grain shedding that is likely to occur from the contact portion 3a. can. When the radius of curvature R is 8 m or less, the contact area with the supported body can be reduced, so the amount of grain shedding that tends to occur from the contact portion 3a can be suppressed.

The supporting surface may be made of a DLC film. When the plasma processing space is located on the side of the support surface of the gap pin 1, if the thermal conductivity of the support surface is high, the members installed around the support part 3 of the gap pin 1 will be affected by the radiant heat of the support surface. It becomes easier to expand. Even if heat of about 200°C to 400°C is generated in the plasma processing space due to plasma processing, the thermal conductivity of the DLC film is low (for example, the thermal conductivity at 20°C is 1 W/(m K) or less). When the support surface is made of a DLC film, the radiant heat of the support surface is reduced, so that expansion of the members installed around the support section 3 can be suppressed.

The side surface of the support part 3 is preferably made of a DLC film. The same effects as those described above can be obtained. The thickness of the DLC film on the support surface may be greater than the thickness of the DLC film on the side surface of the support part 3. With such a configuration, the heat shielding effect of the support surface becomes high. Here, when the support part 3 is cylindrical, the side surface of the support part 3 becomes a curved surface. When the support part 3 has a prismatic shape, the side surfaces of the support part 3 have intersection lines that intersect with each other. In either case, internal stress accumulates more easily in the DLC film on the side surface of the support portion 3 than in the DLC film on the support surface. If the thickness of the DLC film on the side surface of the support part 3 is smaller than the thickness of the DLC film on the support surface, the increase in internal stress accumulation is suppressed, so that the support part 3 can be used for a long period of time.

The thickness of the DLC film on the support surface is, for example, 1 μm or more and 10 μm or less. The difference between the thickness of the DLC film on the support surface and the thickness of the DLC film on the side surface of the support portion 3 is, for example, 0.2 μm or more and 0.8 μm or less. For the same reason as mentioned above, the upper surface of the base 2 is preferably made of a DLC film.

The side surface of the base 2 is preferably made of a DLC film. The thickness of the DLC film on the side surface of the base 2 may be smaller than the thickness of the DLC film on the top surface. With such a configuration, the heat shielding effect of the upper surface becomes high. Here, when the base 2 is disc-shaped, the side surface of the base 2 becomes a curved surface. When the base 2 has a prismatic shape, the side surfaces of the base 2 have intersection lines that intersect with each other. In either case, internal stress accumulates more easily in the DLC film on the side surface of the base 2 than in the DLC film on the top surface. If the thickness of the DLC film on the side surface of the base 2 is smaller than the thickness of the DLC film on the top surface, the increase in internal stress accumulation is suppressed, so that it can be used for a long period of time.

The thickness of the DLC film on the upper surface is, for example, 1 μm or more and 10 μm or less. The difference between the thickness of the DLC film on the top surface and the thickness of the DLC film on the side surface of the base 2 is, for example, 0.2 μm or more and 0.8 μm or less.

When the support part 3 has a DLC film, the support part 3 is preferably made of ceramics containing silicon carbide as a main component. Similarly, when base 2 has a DLC film, base 2 is preferably made of ceramics containing silicon carbide as a main component. Since the DLC film has good adhesion to silicon carbide, it can increase the adhesion strength to ceramics containing silicon carbide as a main component.

The DLC film described above may contain at least one of argon, helium, and hydrogen. In particular, when hydrogen is included, the DLC film can have improved heat resistance and corrosion resistance. The DLC film may be identified using a Raman spectrometer.

The method for manufacturing the gap pin 1 according to one embodiment is not limited, and for example, the gap pin 1 can be manufactured using the following procedure. When the main component of the ceramic forming the gap pin 1 is aluminum oxide, for example, aluminum oxide (purity of 99.9% by mass or more) and powders of magnesium hydroxide, silicon oxide, calcium carbonate, and chromium oxide. and a solvent (ion-exchanged water) are put into a grinding mill.

Next, after pulverizing the powder until the average particle size (D50) becomes 1.5 μm or less, an organic binder and a dispersant for dispersing the aluminum oxide powder are added and mixed to obtain a slurry. Examples of the organic binder include acrylic emulsion, polyvinyl alcohol, polyethylene glycol, and polyethylene oxide.

The content of magnesium hydroxide powder in the total 100% by mass of the above powder is 0.3% by mass or more and 0.42% by mass or less, the content of silicon oxide powder is 0.5% by mass or more and 0.8% by mass or less, carbonate The content of calcium powder is 0.06% by mass or more and 0.1% by mass or less, and the remainder is aluminum oxide powder and inevitable impurities. The total content of unavoidable impurities is 0.1% by mass or less.

After spraying and granulating the slurry to obtain granules, a uniaxial press molding device or a cold isostatic press molding device is used to pressurize the molding pressure at 78 MPa or more and 128 MPa or less to form a molded product that will become the basis of the gap pin 1. get. The gap pin 1 is obtained by firing this molded body in an air atmosphere under conditions of 1500° C. or more and 1700° C. or less and 4 hours or more and 6 hours or less.

In the gap pin 1 obtained in this manner, when both the contact portion 3a of the support surface and the lower surface of the base 2 are fired surfaces, the average value of the cutting level difference (Rδc) at the contact portion 3a is 0. The average value of the cutting level difference (Rδc) on the lower surface of the base 2 was 0.2682 μm. Further, the average value of the root mean square slope (RΔq) at the contact portion 3a of the support surface is 0.2121, and the average value of the root mean square slope (RΔq) at the lower surface of the base 2 is 0.2121. It was 3041. All measurements were performed using the measurement method described above.

If necessary, in the obtained gap pin 1, the support surface of the support portion 3 that contacts the supported object may be subjected to polishing. Polishing is performed, for example, by brush polishing, buffing, or the like.

When polishing the supporting surface with a brush, polishing is performed for 30 to 60 minutes with the gap pin 1 fixed while rotating a roll containing a bundle of brushes each having a length of approximately 10 mm at approximately 50 rpm to 200 rpm. As the abrasive, a paste obtained by adding diamond powder to oils and fats is used, and this paste is applied to the brush in advance. The average particle size of the diamond powder is, for example, 0.5 μm or more and 6 μm or less.

In order to obtain a gap pin 1 in which the average value of the cutting level difference (Rδc) between the contact portion 3a of the support surface and the lower surface of the base 2 is 0.05 μm or more, the rotational speed of the roll and the polishing time are, for example, It may be as described above. The average particle size of the diamond powder may be, for example, 0.5 μm or more and 4 μm or less.

In order to obtain a gap pin 1 in which the difference in the average value of the root mean square slope (RΔq) between the contact portion 3a of the support surface and the lower surface of the base is 0.08 or more, the rotational speed of the roll and the polishing time are as follows. For example, it may be as described above. The average particle size of the diamond powder may be, for example, 0.5 μm or more and 3 μm or less.

When buffing the support surface, the base material for the buff is not limited, and examples thereof include felt, cotton strips, cotton strips, and the like. Examples of the abrasive include diamond powder, green carborundum (GC) powder, and the like. These abrasives may be added to oils and fats and used in the form of a paste.

The average particle size of the abrasive is, for example, 0.5 μm or more and 6 μm or less. The outer diameter of the base material is 150 mm, and the rotation speed thereof is, for example, 28 m/min or more and 170 m/min or less. The polishing time is, for example, 0.5 minutes or more and 5 minutes or less.

When the support surface is a brush-polished surface and the lower surface of the base 2 is a fired surface, the average value of the cutting level difference (Rδc) at the contact portion 3a is 0.0474 μm, and the cutting level difference (Rδc) at the lower surface of the base 2 is calculated as 0.0474 μm. ) was found to be 0.2982 μm. Further, the average value of the root mean square slope (RΔq) at the contact portion 3a of the support surface is 0.0761, and the average value of the root mean square slope (RΔq) at the lower surface of the base 2 is 0.0761. It was 3223. All measurements were performed using the measurement method described above.

When the main component of the ceramic forming the gap pin is silicon carbide, first prepare a coarse powder and a fine powder as silicon carbide powder, and add water and a dispersant if necessary to a ball mill or The mixture is ground and mixed using a bead mill for 40 to 60 hours to form a slurry. Here, the particle size range of each of the fine powder and the coarse powder after pulverization and mixing is 0.4 μm or more and 4 μm or less, and 11 μm or more and 34 μm or less. Next, a sintering aid consisting of boron carbide powder, amorphous carbon powder or phenolic resin, and a binder are added to the resulting slurry and mixed, and then spray-dried to carbonize the main components. Granules consisting of silicon are obtained.

As for the mass ratio of the coarse granular powder and the fine granular powder, for example, the coarse granular powder is 6% by mass or more and 15% by mass or less, and the finely granular powder is 85% by mass or more and 94% by mass or less.

Next, the granules are filled into a predetermined mold, and pressed and molded from the thickness direction at a pressure appropriately selected in the range of 49 to 147 MPa to obtain a molded body that is a gap pin precursor. Then, the obtained molded body is degreased in a nitrogen atmosphere at a temperature of 450 to 650° C. for a holding time of 2 to 10 hours to obtain a degreased body.

Next, the gap pin 1 is obtained by holding and firing this degreased body in a reduced pressure atmosphere of inert gas at a maximum temperature of 1800° C. or more and 2200° C. or less and a holding time of 3 hours or more and 6 hours or less. When the gap pin is mainly composed of silicon carbide, the sintering aid may be boron carbide powder, amorphous carbon powder, or phenolic resin, as described above, and the sintering aid may be aluminum oxide powder. and rare earth oxide powder. The rare earth oxide powder is, for example, yttrium oxide powder.

When aluminum oxide powder and yttrium oxide powder are sintering aids, sintering results in a ceramic containing silicon carbide as a main component and aluminum and yttrium as oxides. This ceramic preferably contains silicon carbide as a main component, aluminum in an oxide equivalent of 1 to 10 mass %, and yttrium in an oxide equivalent of 1 to 10 mass %.

When aluminum oxide powder and yttrium oxide powder are sintering aids, sintering becomes liquid phase sintering and a grain boundary phase is formed. If the content of aluminum and yttrium in terms of oxides is within the above range, the thermal conductivity can be made relatively low, at 50 W/(m·K) or more and 70 W/(m·K) or less.

When forming a DLC film on the gap pin 1 obtained in this way, for example, a plasma ion implantation film formation method may be used. In the plasma ion implantation film formation method, a high frequency pulse for pulse generation and a negative high voltage pulse for ion implantation are superimposed to generate plasma around the support part, and the ion species in the plasma are removed by the high voltage pulse. This method is to pull it into the support part.

Specifically, first, ion species in the hydrocarbon gas plasma are generated by applying a pulsed high-frequency discharge voltage of 13.56 MHz to a gap pin before film formation that is placed in a low-pressure hydrocarbon gas atmosphere. . After that, by applying a negative high voltage pulse discharge voltage to the gap pin in afterglow plasma and bombarding the gap pin with ions, the supporting surface made of the DLC film, the side surface of the supporting part, the upper surface of the base, and the base are You can get aspects such as.

Before generating the ion species in the hydrocarbon gas plasma, it is preferable to perform a plasma cleaning process using ions such as argon, helium, hydrogen, or the like. By this plasma cleaning treatment, impurities adhering to the support portion and the base portion can be removed, so that a DLC film with higher adhesion to the support portion and the base portion can be obtained.

The gap pin 1 according to one embodiment is employed as a part of various industrial devices. Examples of such industrial equipment include heat treatment equipment, electrostatic chuck equipment, semiconductor substrate inspection equipment, and development equipment.

The heat treatment apparatus includes, for example, a mounting table and a gap pin 1 according to an embodiment. The gap pin 1 according to one embodiment is provided on the mounting table so that the supported object is placed on the mounting table with a gap provided therebetween. The heat treatment apparatus will be described in more detail based on FIGS. 2A and 2B. FIG. 2A is a sectional view showing a heat treatment apparatus according to an embodiment of the present disclosure, and FIG. 2B is an enlarged sectional view of section A in FIG. 2A.

The heat processing apparatus 10 has a processing chamber 11 in which a wafer W is heat-processed. The processing chamber 11 includes a mounting table 12 on which the wafer W is placed, lift pins 13 that raise and lower the wafer W on the mounting table 12, and a shutter 14 that blocks outside air.

The shutter 14 is raised or lowered by the operation of the cylinder 15. When the shutter 14 rises, the shutter 14 comes into contact with a stopper 17 attached to the lower part of the cover 16, and the processing chamber 11 becomes a closed space. The stopper 17 is provided with an air supply port (not shown), and air flowing into the processing chamber 11 from this air supply port is discharged from an exhaust port 18 formed at the center of the upper part of the processing chamber 11 . The air flowing in from the air supply port can heat-process the wafer W at a predetermined temperature without directly touching the wafer W.

The mounting table 12 has a disk shape larger than the wafer W, and has a built-in heater 19 that heats the wafer W. A gap pin 1 is provided on the mounting table 12 so that the wafer W is placed on the mounting table 12 with a gap, and prevents particles generated from the mounting surface of the mounting table 12 from adhering to the wafer W. suppress.

As shown in FIG. 2B, the gap pin 1 includes a base 2 that is installed in a recess 12a provided on the mounting surface of the mounting table 12, and a support section 3 that is provided on the upper surface of the base 2 and supports the wafer W. The difference between the heat applied to the wafer W from the gap pin 1 and the heat applied to the wafer W from the mounting surface of the mounting table 12 is made small.

Specifically, the holding member 20 is buried in the space S above the base 2 in the recess 12a, so that the thermal gradient between the mounting table 12 and the gap pin 1 is reduced. The holding member 20 is preferably made of the same material as the mounting table 12. Other materials may be used as long as they have a thermal conductivity comparable to that of the mounting table 12. The gap between the mounting table 12 and the wafer W is, for example, 0.1 mm or more and 0.3 mm or less.

The lower part of the lift pin 13 is fixed to a connecting guide 22, and the connecting guide 22 is connected to a timing belt 23. The timing belt 23 is placed around a drive pulley 25 driven by a stepping motor 24 and a driven pulley 26 arranged above the drive pulley 25 . By changing the rotational direction of the stepping motor 24, the lift pins 13 move up or down in the through holes 21 provided in the circumferential direction of the mounting table 12, and support the wafer W at the position shown by the two-dot chain line. The wafer W can be placed on the mounting table 12.

The electrostatic chuck device according to the present disclosure includes, for example, a mounting table, a focus ring, and a gap pin 1 according to an embodiment. The focus ring is located around the mounting table. The focus ring includes a fixed part provided along the circumference, and a movable part provided concentrically with the fixed part and movable in the vertical direction. A gap pin 1 according to one embodiment is provided on the upper surface of this fixed portion. The electrostatic chuck device according to the present disclosure will be described in more detail based on FIGS. 3A and 3B.

FIG. 3A is a perspective view of an electrostatic chuck device according to an embodiment of the present disclosure, showing a state in which a supported object is placed on a mounting table. FIG. 3B is a perspective view of an electrostatic chuck device according to an embodiment of the present disclosure, showing a state in which a supported object is lifted from a mounting table.

The electrostatic chuck device 30 shown in FIGS. 3A and 3B has a holding section 32 on which a mounting table 31 is mounted. The mounting table 31 has a mounting surface 31a on which the wafer W is mounted.

The holding part 32 has a disk shape and is arranged on the side opposite to the mounting table 31 (below the electrostatic adsorption electrode (not shown)). The holding unit 32 cools the mounting table 31 and adjusts it to a desired temperature. The holding portion 32 includes a flow path (not shown) that circulates water therein. The holding portion 32 is made of, for example, aluminum, aluminum alloy, copper, copper alloy, stainless steel (SUS), titanium, or the like. When the electrostatic chuck device 30 is used in a plasma space, an insulating film such as aluminum oxide is preferably formed on at least the surface of the holding portion 32 that is exposed to plasma.

As shown in FIG. 3A, the focus ring 33 includes an upper ring 34 located above and a lower ring 35 located below the upper ring 34. The upper ring 34 includes a fixed part 37 provided along the circumference, and a movable part 36 provided concentrically with the fixed part and movable in the vertical direction.

As shown in FIG. 3B, when the lift pins 38 rise, the movable part 36 rises and lifts the wafer W. A positioning hole (not shown) that fits into the gap pin 1 provided on the upper surface of the lower ring 35 is provided on the lower surface of the movable portion 36 . By providing the gap pin 1 and the positioning hole, when the movable part 36 descends together with the lift pin 38, the movable part 36 is positioned on the lower ring 35. On the other hand, the fixed part 37 is fixed to the lower ring 35.

The movable part 36 has openings 36b that are open at both ends thereof, and has a C-shape in plan view. When the movable part 36 does not move, the fixed part 37 is located within the opening 36b in plan view. In the electrostatic chuck device 30 shown in FIG. 3A, the movable part 36 is in contact with the fixed part 37 at both ends in the circumferential direction. In the electrostatic chuck device 30 shown in FIG. 3B, the opening 36b of the movable part 36 is open. In the state shown in FIG. 3B, a transport mechanism (not shown) such as a transport arm that transports the wafer W can be inserted into the opening 36b from the outside in the radial direction. The movable portion 36 has fifth surfaces 36a, both of which are inclined downward, at both end portions in the circumferential direction.

The fixing portion 37 has sixth surfaces 37a, both of which are inclined upward, at both ends in the circumferential direction. In a steady state, the fifth surface 36a and the sixth surface 37a overlap each other in the vertical direction due to their mutual slopes. When the fifth surface 36a and the sixth surface 37a overlap in this way, the contact portion between the movable portion 36 and the fixed portion 37 extends diagonally. When the contact portion extends diagonally, the path through which plasma enters becomes longer, and therefore the invasion of plasma into the gap between the movable portion 36 and the fixed portion 37 is suppressed.

Therefore, widening of the gap between the movable part 36 and the fixed part 37 due to plasma erosion can be suppressed, and the electrostatic chuck device 1 can be used for a long period of time. The angle of inclination of the fifth surface 36a and the sixth surface 37a with respect to the horizontal direction is preferably 45° or less. By setting the inclination angles of the fifth surface 36a and the sixth surface 37a within this range, it becomes more difficult for plasma to enter the gap between the movable part 36 and the fixed part 37.

The gap pin according to the present disclosure is not limited to the above-described embodiment. For example, in the gap pin 1 described above, the base 2 has a circular shape when viewed from above. However, the base 2 is not limited to a circular shape. For example, depending on the desired use, the base 2 may have an elliptical shape when viewed from above, or may have a polygonal shape such as a triangular, quadrangular, pentagonal, or hexagonal shape. The support portion 3 is also not limited to a cylindrical shape. For example, depending on the desired use, the support portion 3 may have an elliptical column shape, or a prismatic shape such as a triangular column, a quadrangular column, a pentagonal column, or a hexagonal column.

Furthermore, the method for manufacturing the gap pin 1 described above describes a method of integrally molding the base portion 2 and the support portion 3. However, the gap pin according to the present disclosure may be manufactured by molding the base 2 and the support part 3 separately, firing them, and then joining the base part 2 and the support part 3 together. The bonding method is not limited, and examples include diffusion bonding.

1 Gap pin 2 Base 3 Support part 3a Contact part 10 Heat treatment device 11 Processing chamber 12 Mounting table 12a Recess 13 Lift pin 14 Shutter 15 Cylinder 16 Cover 17 Stopper 18 Exhaust port 19 Heater 20 Holding member 21 Through hole 22 Connection guide 23 Timing belt 24 Stepping motor 25 Drive pulley 26 Driven pulley 30 Electrostatic chuck device 31 Mounting table 32 Holding section 33 Focus ring 34 Upper ring 35 Lower ring 36 Movable section 36a Fifth surface 36b Opening 37 Fixed section 37a Sixth surface 38 Lift pin

Claims (15)

a base having a first surface and a second surface located opposite the first surface;
a support portion located on the first surface and having a third surface opposite to the first surface and a fourth surface located opposite to the third surface and including a contact portion with the supported body;
including;
The contact portion has a cut level difference (Rδc) representing the difference between the cut level at a load length rate of 25% in the roughness curve and the cut level at a load length rate of 75% in the roughness curve. the average value is smaller than the second surface;
gap pin. The gap pin according to claim 1, wherein the average value of the cutting level difference (Rδc) on the second surface is 0.2 μm or more and 0.37 μm or less. The gap pin according to claim 1 or 2, wherein an average difference in cutting level difference (Rδc) between the contact portion and the second surface is 0.05 μm or more. a base having a first surface and a second surface located opposite the first surface;
a support portion located on the first surface and having a third surface opposite to the first surface and a fourth surface located opposite to the third surface and including a contact portion with the supported body;
including;
The contact portion has an average value of a root mean square slope (RΔq) in the roughness curve that is smaller than that of the second surface.
gap pin. The gap pin according to claim 4, wherein the average value of the root mean square slope (RΔq) of the second surface is 0.17 or more and 0.48 or less. The gap pin according to claim 4 or 5, wherein a difference in average value of root mean square slope (RΔq) between the contact portion and the second surface is 0.08 or more. The gap pin according to any one of claims 1 to 6, wherein the fourth surface is a polished surface. The gap pin according to any one of claims 1 to 6, wherein the fourth surface is a fired surface. The gap pin according to claim 1, wherein the fourth surface is made of a DLC film. The gap pin according to claim 9, wherein the side surface of the support portion is made of a DLC film, and the thickness of the DLC film on the fourth surface is greater than the thickness of the DLC film on the side surface of the support portion. The gap pin according to claim 1, wherein the first surface is made of a DLC film. The gap pin according to claim 11, wherein the side surface of the base is made of a DLC film, and the thickness of the DLC film on the first surface is greater than the thickness of the DLC film on the side surface of the base. The gap pin according to any one of claims 1 to 12, wherein at least one of the support portion and the base portion is made of ceramics containing silicon carbide as a main component. comprising a mounting table and a gap pin according to any one of claims 1 to 13,
The gap pin is provided on the mounting table so that the supported object is placed on the mounting table with a gap provided therebetween.
Heat treatment equipment. comprising a mounting table and a focus ring located around the mounting table,
The focus ring includes an upper ring including a fixed part provided along the circumference, a movable part provided concentrically with the fixed part and movable in the vertical direction, and a lower part of the upper ring. and a lower ring located in the
An electrostatic chuck device, wherein the gap pin according to any one of claims 1 to 14 is provided on the upper surface of the lower ring.

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