TWM516219U - A wafer supporting structure used in a thermal treating chamber and an apparatus thereof - Google Patents

Abstract

The present creation provides a wafer supporting structure used in a thermal treating chamber, which comprises: a supporting substrate, having a fist surface, an opposite second surface, and a through hole extending from the first surface to the second surface; a supporting pin, having a supporting body and a bayonet wherein the bayonet is disposed on an end of the supporting body, and an extending direction of the bayonet is perpendicular to an extending direction of the supporting body; and a pin holder, penetrated by and fixed on the supporting pin. When the supporting pin is being fixed on the supporting substrate, the bayonet is moved from a side of first surface to a side of the second surface via the through hole to make the supporting pin penetrating the supporting substrate and the pin holder contacting with the first surface of the supporting substrate, and the supporting pin is rotated to make the bayonet contacted with the second surface of the supporting substrate. And thus the supporting pin is engaged to the supporting substrate.

Description

Wafer support structure and device thereof in heat treatment chamber

The present invention relates to a wafer support structure and apparatus in a semiconductor process heat treatment chamber, and more particularly to a wafer support structure and apparatus thereof that can improve the uniformity of wafer heat.

In the manufacture of integrated circuits (ICs), there are many steps that must be performed by means of high temperature processing, such as the manufacture of Self-aligned Silicide (Salicide), diffusion barrier between metal wires and twin contacts (Diffusion). Formation of Barrier Layer, Ion Implantation Dosage Monitor, reflow of Borophosphosilicate glass (BPSG), tempering of metal layers, and growth of thin oxide layers.

The rapid annealing treatment can quickly raise and lower the temperature, and the processing time is extremely short. Therefore, the temperature control is very important. Otherwise, the wafer surface film is easy to reduce the product yield due to the structural difference caused by the inappropriate temperature, and even scrapped. Moreover, before entering the rapid annealing processing machine, the wafer has been subjected to the required process processing, such as a patterning process, and the wafer surface height is inconsistent, which is more likely to cause uneven heating during rapid annealing. Forming a so-called cold area, which in turn leads to inconsistent conductive effects of the film formed on the surface and reduces product yield. The uniformity of the heating temperature is interlocked with the internal structure of the machine. How to adjust the machine simply and effectively to improve the uniform heating of the wafer surface Degree has become the subject of this creation.

The present invention provides a wafer support structure in a Rapid Thermal Treatment (RTP) chamber, comprising: a support substrate having a first surface, a second surface relative to the first surface, and a through hole a surface extending to the second surface; a support pin having a support pin body and a bayonet, wherein the bayonet is located at one end of the support pin body, and the extension direction of the bayonet is perpendicular to the extending direction of the support pin body; and the support pin base, The support pin is punched through and fixed to the support pin. When the end of the support pin having the bayonet is inserted into the support substrate from the first surface via the through hole, and the support pin passes through the support substrate, the support pin base contacts the support substrate. The first surface, and the support pin rotates the bayonet to contact the second surface to engage the support pin on the support substrate.

In a preferred embodiment of the present invention, the support pin is integrally formed with the support pin base.

In a preferred embodiment of the present invention, the support pin base has a diameter between 2 and 5 mm.

In a preferred embodiment of the present invention, the height of the support pin base described above is between 1 and 1.7 mm.

In a preferred embodiment of the present invention, the support pin base and the support pin are made of quartz.

In a preferred embodiment of the present invention, one of the latches has a length greater than a diameter of the support pin.

In a preferred embodiment of the present invention, one of the support pin bodies has a length between 17.4-19.7 mm (mm) and a diameter between 1.3-2 mm.

In a preferred embodiment of the present invention, the shape of the through hole corresponds to a part of the bayonet and a part of the support pin body, so that the bayonet and the support pin are connected to the support pin base. The portion of the joint can pass through the support substrate by using the through hole.

The present invention also provides a Rapid Thermal Treatment (RTP) device comprising: a support structure as described above; a heat source disposed on a side of the support substrate adjacent to the second surface; and a gas passage opening disposed away from the support substrate The opposite side of the heat source.

In a preferred embodiment of the present invention, the Rapid Thermal Treatment (RTP) device further includes: a top surface located on a side of the gas passage opening away from the support substrate; and a sidewall disposed on the support substrate and the top surface The support substrate and the top surface are connected between the top surface and the support substrate to form a chamber, and the gas passage opening is located on the sidewall.

Therefore, the present invention can provide a support structure in a Rapid Thermal Treatment (RTP) chamber, and a Rapid Thermal Treatment (RTP) device to improve the uniformity of heating of the wafer while improving the product. Yield, reduce the cost of consumption.

1‧‧‧Support substrate

2‧‧‧Support pins

3‧‧‧Support pin base

10‧‧‧Support structure

20‧‧‧heat source

21‧‧‧Support pin body

22‧‧‧Karts

30‧‧‧ gas passage opening

40‧‧‧ chamber

100,200‧‧‧ Rapid heat treatment unit

211‧‧‧Supporting the upper part of the pin body

212‧‧‧Bottom of the support pin body

D ₃ , D ₂₂ , D ₂₁₁ , D ₂₁₂ ‧ ‧ length

F1, F2‧‧‧ surface

H1‧‧‧through hole

H11‧‧‧ Body Department

H12‧‧‧Clock Department

R ₂ , R ₃ , R ₂₂ ‧‧‧ diameter

Sub‧‧‧ wafer

The above and other objects, features and advantages of the present invention will become more apparent and understood. Figure 2a-2b is a schematic view of the structure of the support structure according to the second embodiment of the present invention; Figure 3 is a schematic cross-sectional view of the support structure according to an embodiment of the present invention; 4-5 is a schematic cross-sectional view of the rapid thermal processing apparatus, drawn according to different embodiments of the present creation.

The present invention provides a support structure in a Rapid Thermal Treatment (RTP) chamber and a Rapid Thermal Treatment (RTP) device to provide better thermal uniformity and process performance of the substrate. The above and other objects, features and advantages of the present invention will become more apparent and understood.

As shown in FIG. 1, the present disclosure provides a perspective schematic view of a support structure 10 in a Rapid Thermal Treatment (RTP) chamber, including a support substrate 1, a support pin 2, and a support pin base 3. The support substrate 1 has a first surface F1, a second surface F2 opposite to the first surface F1, and a through hole H1 extending from the first surface F1 to the second surface F2. In order to allow the heat source in the rapid thermal processing chamber to penetrate efficiently, the support substrate 1 may optionally be made of a transparent and heat-resistant quartz material. The support pin 2 has a support pin body 21 and a bayonet 22, wherein the bayonet 22 is located at one end of the support pin body 21, and the direction in which the bayonet 22 extends is perpendicular to the direction in which the support pin body 21 extends. The shape of the support pin body 21 is a needle shape, and one end away from the bayonet 22 has a conical shape, and one end of the support pin 22 has a cylindrical shape. Further, the length in the extending direction of the bayonet 22 is larger than the diameter of the support pin body 21, and the diameter of the support pin base 3 is larger than the diameter of the support pin body 21. The support pin 2 and the support pin base 3 may be integrally formed or fixedly supported on the support pin 2 by adhesive means. In order to reduce the blocking of the heat source, both the support pin 2 and the support pin base 3 may be made of a transparent and heat-resistant quartz material.

The support pin body 21 includes an upper portion 211 and a bottom portion 212. The upper portion 211 is a portion of the support pin body 21 above the first surface F1 of the substrate 1. The bottom portion 212 is a joint of the support pin body 21 and the bayonet 22 to the support pin body 21. A portion that is joined to the support pin base 3. The support pin 2 is snap-fitted onto the support substrate 1, and when the two are engaged, the bottom 212 of the support pin body 21 is completely inserted into the support substrate 1.

When one end of the support pin 2 having the bayonet 22 is inserted into the support substrate 1 from the first surface F1 via the through hole H1, and the support pin 2 is passed through the support substrate 1, the bottom 212 of the support pin body 21 is completely placed into the support substrate 1 The support pin base 3 contacts the first surface F1 of the support substrate 1, and then the support pin 2 rotates the contact pin 22 to contact the second surface F2 of the support substrate 1 to engage the support pin 2 on the support substrate 1. The through hole H1 on the support substrate 1 has a shape corresponding to the partial bayonet 22 and the partial support pin body 21, so that the support pin 2 can smoothly pass through the support substrate 1, and the bayonet 22 and the support are supported by rotating the support pin 2. The second surface F2 of the substrate 1 is in contact with it to be smoothly engaged with the support substrate 1. The support pin base 3 not only provides the function of the engagement, but also provides the stability of the support pin 2 in the horizontal direction.

2a-2b show a support structure 10 according to the second embodiment of the present invention. The difference between the embodiment shown in Figs. 2a and 2b is the position at which the support pin body 21 is coupled to the bayonet 22, and the shape of the through hole H1. As shown in FIG. 2a, the bayonet 22 is located at one end of the support pin body 21, the length in the direction in which the bayonet 22 extends is greater than the diameter of the support pin body 21, and the support pin body 21 is located approximately midway between the bayonet 22. In order to enable the support pin 2 to be engaged with the support pin base 3 via the bayonet 21 and the support pin base 3, the through hole H1 is formed with a body portion H11 and a second engaging portion H12, so that the shape of the through hole H1 can correspond to the portion. The bayonet 22 and the portion of the support pin body 21 are shaped such that the support pin 2 can smoothly pass through the support substrate 1 and is smoothly engaged with the support substrate 1 by rotating the support pin 2. In another embodiment, as shown in FIG. 2b, the bayonet 22 is located at one end of the support pin body 21, the length in the extending direction of the bayonet 22 is larger than the diameter of the support pin body 21, and one side of the support pin body 21 and the bayonet 22 sides are aligned. In order to enable the support pin 2 to be engaged with the support pin base 3 via the bayonet 21 and the support pin base 3, the through hole H1 is formed with a body portion H11 and an engaging portion H12, so that the shape of the through hole H1 corresponds to the portion. The bayonet 22 and the portion of the support pin body 21 are shaped such that the support pin 2 can smoothly pass through the support substrate 1 and is smoothly engaged with the support substrate 1 by rotating the support pin 2.

The above embodiments and drawings provided in the specification are for illustration and illustration only. It is not intended to limit this creation. The bayonet 22, the support pin base 3, the through hole H1, and the like may have any shape, for example, only the support pin base 3 of the upper narrow width is drawn in the drawing, but in other embodiments of the present invention, It can be a simple cylindrical shape. Anyone who conforms to this concept of creation does not deviate from the scope of this creation.

According to the concept of the present invention, since the support pin 2 can be fixed to the support substrate 1 by both the bayonet 22 and the support pin base 3, the horizontal and vertical directions are provided. FIG. 3 is a schematic cross-sectional view of the support structure 10 according to the present invention. As a result of the cooperation, the length D ₂₁₂ of the bottom portion 212 of the support pin body 21 can be 1.4-1.7 mm (mm), and the support pin body The upper portion 211 has a length D ₂₁₁ of 16-18 mm (mm) and the support pin 2 has a maximum diameter range R _{2 of} between 1.3 and ₂ mm (the diameter of the bottom portion 212 may be less than or equal to the upper portion 211). The support pin 2 of the above size having a diameter range or/and a maximum diameter range R ₂ , but also falling within this range, using only the maximum horizontal diameter R ₃ between 2 and 5 mm (mm), the maximum vertical height D ₃ is interposed between the base of the support pin to 1.7 mm (mm). 3, ₂₂ and between 1-1.2 mm diameter R (mm) between the length D is between 2.5 - ₂₂ mm ( The bayonet 22 between mm) achieves a good fixing effect. Therefore, the support structure provided by the present invention enables the maximum range of heat sources from under the wafer to be transmitted to the bottom of the wafer, thereby effectively avoiding uneven heating of the wafer caused by blocking the heat source in the heat treatment process, and improving the yield of the process and the product.

In an embodiment of the present invention, the length D ₂₁₂ of the bottom portion 212 of the support pin body 21 is 1.6 mm (mm), and the length D ₂₁₁ of the upper portion 211 of the support pin body 21 is 16.7 mm (mm) (the length of the conical portion is 9.3 mm). The support pin 2 of the above size having a cylindrical portion of 7.4 mm) and a support pin 2 having a maximum diameter range R ₂ of 1.9 mm (the diameter of the bottom portion 212 is equal to the maximum diameter range R ₂ ) is only the maximum level A support pin base 3 having a diameter R ₃ of 4 mm (mm) and a maximum vertical height D ₃ of 1.4 mm (mm) having a diameter R ₂₂ of 1.14 mm (mm) and a length D ₂₂ of 2.8 mm ( The bayonet 22 of mm) can achieve a good fixing effect.

This creation also provides a rapid thermal treatment (Rapid Thermal A treatment, RTP) device comprising a support structure 10 having the above features, further comprising a heat source and a gas passage opening. As shown in FIG. 4, a schematic structural view of a rapid thermal processing apparatus 100 (including a wafer Sub placed on a support pin 2) according to an embodiment of the present invention, wherein components having the same function as the support structure 10 shown in FIG. 1 are used The same name and label. The rapid thermal processing apparatus 100 includes at least a support structure 10, a heat source 20, and a gas passage opening 30. The heat source 20 is disposed on one side of the support substrate 1 near the second surface F2, and the components such as the support pin 2, the support pin base 3, the through hole H1, and the like in the embodiment shown in FIG. 4 meet the conditions described above, and thus Do not repeat them. The gas passage opening 30 supports the substrate 1 away from the opposite side of the heat source 20 for introducing the gas required in the rapid heat treatment process. In another embodiment of the present invention, due to the convenience of the process, as shown in FIG. 5, a schematic diagram of the structure of the rapid thermal processing apparatus 200 according to the embodiment of the present invention is shown. The wafer Sub is placed in a chamber made of quartz. 40, and the support substrate 1 and the chamber 40 may be integrally formed, the support substrate 1 will be the bottom surface of the chamber 40, the chamber 40 also has a top surface and a side wall, and the top surface is located at one of the gas passage openings 30 away from the support substrate 1. The side and the side wall are located between the support substrate 1 and the top surface, and connect the support substrate 1 and the top surface. Thus, the top surface, the side walls and the support substrate 1 together form the chamber 40, while the gas passage opening 30 can optionally be located on the side wall.

Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. Anyone with ordinary knowledge in the field can make some changes and refinements without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

1‧‧‧Support substrate

2‧‧‧Support pins

3‧‧‧Support pin base

10‧‧‧Support structure

21‧‧‧Support pin body

22‧‧‧Karts

211‧‧‧Supporting the upper part of the pin body

212‧‧‧Bottom of the support pin body

F1, F2‧‧‧ surface

H1‧‧‧through hole

Claims (10)

A wafer support structure in a Rapid Thermal Treatment (RTP) chamber, comprising: a support substrate having a first surface, a second surface opposite to the first surface, and a through hole from the first a surface extending to the second surface; a support pin having a support pin body and a bayonet, wherein the bayonet is located at one end of the support pin body, and the bayonet extends in a direction perpendicular to the support pin body And extending a support pin to be supported by the support pin, and the end of the support pin having the bayonet is inserted into the support substrate from the first surface via the through hole, And passing the support pin through the support substrate, the support pin base contacting the first surface of the support substrate, and rotating the support pin to contact the contact pin to the second surface to engage the support pin on the support On the substrate. The wafer support structure in a Rapid Thermal Treatment (RTP) chamber according to claim 1, wherein the support pin and the support pin base are integrally formed. The wafer support structure in a Rapid Thermal Treatment (RTP) chamber according to claim 1, wherein the support pin base has a diameter of between 2 and 5 mm. A wafer support structure in a Rapid Thermal Treatment (RTP) chamber as described in claim 1, wherein the support pin base has a height of between 1 and 1.7 mm. Rapid Thermal Treatment (RTP) as described in claim 1 a wafer support structure in the chamber, wherein the support pin base and the support pin are made of quartz. The wafer support structure in a Rapid Thermal Treatment (RTP) chamber according to claim 1, wherein one of the bayons has a length greater than a diameter of the support pin. The wafer support structure in a Rapid Thermal Treatment (RTP) chamber according to claim 1, wherein one of the support pin bodies has a length of between 17.4-19.7 mm (mm), The diameter is between 1.3 and 2 mm. The wafer support structure in a Rapid Thermal Treatment (RTP) chamber according to claim 1, wherein the shape of the through hole corresponds to a part of the bayonet and a part of the support pin body, so that the card A portion of the pin and the support pin to the connection of the support pin base can pass through the support substrate through the through hole. A rapid thermal treatment (RTP) device, comprising: the support structure according to any one of claims 1 to 8; a heat source disposed on a side of the support substrate adjacent to the second surface And a gas passage opening disposed on the opposite side of the support substrate away from the heat source. The Rapid Thermal Treatment (RTP) device of claim 9, further comprising: a top surface located on a side of the gas passage opening away from the support substrate; and a sidewall disposed on the support substrate Connecting the support substrate and the top surface to the top surface, wherein the top surface, the side wall and the support substrate together form a chamber, and the gas passage opening position On the side wall.