TWI270161B - Boat, batch type apparatus and wafer handling process using the boat - Google Patents

Abstract

A boat for a batch type apparatus is provided. A plurality of wafer slot is configured at the boat between a first end and a second end of the boat. The plurality of wafers are paralleled each other with their surface by putting them into the wafer slots. These spaces of the wafer slots are increased gradually from the first end to the second end of the boat. The boat can be configured in a vertical furnace. The first end of the boat is configured on the bottom of the furnace, and the second end of the boat is located on the top of the furnace. When the vertical furnace with the boat is used to perform a wafer handling process, the difference of electrical parameters and film's characteristics of the wafers in the same process can be reduced.

Description

1270161

FIELD OF THE INVENTION The present invention relates to a semiconductor device and process, and more particularly to a wafer boat and batch processing using the same (batch typ and wafer processing process. Prior art furnace tube reactor It is a batch processing device, so it can be processed in one-time, large, and the furnace tube reactor can be applied to the Chemical Vapor Deposition (CVD) process and the Doping process. In the application of chemical vapor deposition processes, the deposition of materials such as polysilicon, yttrium oxide and tantalum nitride, as for the application of the doping process, for example, can be applied to the gate polycrystal of the MOS transistor. The dosing of the layer is preset, etc. The furnace tube reactor can be mainly divided into two types, horizontal and vertical. Since the vertical furnace tube (Vertical Furnace) requires a small overall volume, it has gradually been used. It replaces the traditional horizontal tube chemical vapor deposition method and becomes the mainstream in the industry. The first figure shows a cross-sectional view of a vertical furnace tube equipment. Please refer to Figure 1 The furnace tube equipment includes at least a lifting base 〇〇, a furnace tube 102, a gas inlet 1〇6, a boat 11〇, a heating device, a heating device Z2, a heating device Z3, a heating device Z4, and a heating device Z5. The lifting base 110 of the 2 is equipped with a boat 11 〇, and the wafer boat 11 has a plurality of wafer slots for horizontally arranging the wafer on the boat 110, and The wafer slots are equally spaced and the surfaces of the wafers 108 disposed therein are parallel to each other. The gas inlets 1 and 6 are disposed at the bottom 112 of the furnace tube 102, and the heating devices Z1 to Z5 are Arranged outside the furnace tube 1〇2

Page 5

1270161 V. INSTRUCTIONS (2) Walls are used to provide the heat energy required in the furnace tube 102 in the process. The reaction gas system used in the process is injected into the furnace tube 1〇2 from the bottom portion 11 2 toward the top portion 114 from the gas inlet 1 〇 6 so that the reaction gas flows and diffuses from the bottom portion 11 2 of the furnace tube 1〇2 to The middle portion of the furnace tube 2 and the top portion 11 4 flow through the surface of the wafer 108. In the above process, since the pressure in the furnace tube 102 is not high, the concentration of the reaction gas in the middle portion and the top portion 114 of the furnace tube 102 is much smaller than the concentration of the reaction gas at the bottom portion 11 of the furnace tube I 0 2, so that the The lower the deposition rate of the film deposited on the wafer 1 〇8 at the top II 4 of the furnace tube 1 〇2, thus

The problem of uneven thickness of deposited film 1 〇 8 deposited in the same batch. The method of determining the thickness unevenness between the wafer and the wafer is to adjust the heating power to the power of the Z5 to make the heat energy provided by the heating devices Z1 to Z5: ^ 1 Z5 is incremented in the heating device Z1' The temperature of the top 114 spot in the interior of the cooker 102 increases the deposition rate of the film on the surface of the wafer 108, which in turn gives the wafer of the same batch a good film thickness uniformity. ...the problem can be overcome by adjusting the temperature of the wafer processing process, although the film thickness of the wafer is uniform, but there are some problems: ~ 知幼〜/~衣枉马,, above

The thermal budget of the wafers in different positions in the vertical furnace tube will be different, and the wafers at the top of the wafer will have a considerable electrical difference between the wafers at the top and the wafers at the top. - ° Japanese Yen 1 In addition, the doping process of arsenic (As) to the polysilicon gate layer is at the bottom of the furnace tube 102. The concentration of the reaction gas is higher than that of the furnace tube. 'by

1270161 V. Inventive Note (3) The concentration of the reaction gas is high, so the doping on the wafer 丨〇8 will be from the bottom of the furnace tube to the furnace, and the furnace will be closed. ! Μ θ θ has a small gradient and is close to the furnace: = The concentration of erbium doped on circle 108 is much greater than the top near 02. Η 14 wafers 1〇8. On the other hand, after the wafer 1〇8 is subjected to another $$, the resistance value measured by the wafer with more gods will be lower than that measured by the wafer with less application. Causes a large difference in electrical properties. In the wide-width semiconductor process, the above-mentioned electrical differences in the deposition process or the doping process may be within the allowable range of the process, however, as the process of semiconductor components continues to shrink in recent years. The tolerance of the electrical difference between the wafers will be reduced. Under this circumstance, the wafer's electrical difference value of the conventional process will exceed the new process tolerance margin, thus causing no The production of good products. Man Jg content

Therefore, in the present invention, the invention provides a seed boat and a batch processing device using the crystal and a wafer processing process J, which can reduce the electrical difference between the wafers of the same batch. The boat 5 is suitable for a wafer batch processing device, wherein 'the first end portion to the second end portion of the wafer boat has a plurality of wafer slots' and the wafer slot is configured to be disposed in the wafer The surfaces are parallel to each other and are characterized in that the distance between the wafer slots gradually increases from the first end of the wafer boat toward the second end. Furthermore, the present invention provides a batch processing apparatus comprising at least a boat and a gas inlet. Wherein, there is a complex between the first end and the second end of the boat

11741twf.ptd Page 7 1270161 V. INSTRUCTIONS (4) Several wafer slots, and the wafer slots are such that the surfaces of the wafers disposed therein are parallel to each other. The gas inlet provides gas from the first end toward the second Z to react the gas with the wafer, wherein the distance between the wafer slots gradually increases from the first end of the wafer toward the second end. In addition, the present invention further proposes a wafer processing process suitable for a batch processing apparatus. Among them, the batch processing apparatus has at least a boat and a gas inlet. There are a plurality of wafer slots ′ between the first end and the second end of the wafer, and the wafer slots are such that the surfaces of the wafers disposed therein are parallel to each other. The gas inlet provides gas from the first end toward the second end to cause the gas to react with the wafer. The wafer processing process includes at least arranging the wafers in the wafer boat, and the arrangement pitch of the wafers is gradually increased from the first end of the wafer boat toward the second end portion, and then the wafer is processed by the batch processing device. deal with. As can be seen from the above, when the wafer boat is applied to a batch processing device, the wafer slot pitch can be gradually increased along the supply and flow of the reaction gas, and the diffusion direction can be reduced, thereby reducing the reaction rate at both ends. The difference 'and thereby narrow the thermal budget difference between the two ends, thereby further reducing the electrical differences of the same batch of wafers. And 'by properly adjusting the wafer slot spacing of the wafer boat' can also make the wafer placement of the wafer boat not to be reduced too much, thereby maintaining the production of the batch processing device using the wafer boat. rate. Furthermore, the present invention can also utilize a conventional wafer boat, and when it is applied to a batch processing device, the same batch can be made by gradually increasing the placement pitch of the wafer along the supply and flow and diffusion directions of the reaction gas. The difference in electrical properties between wafers processed is reduced, reducing the occurrence of defective products.

11741twf.ptd Page 8 1270161

In order to make the above and other aspects of the present invention obvious, the following detailed description of the preferred embodiments will be described as follows: The objects, features, and advantages can be more clearly illustrated, and The drawings illustrate a cross-sectional view of a wafer boat in accordance with a preferred embodiment of the present invention. Referring to FIG. 2, the wafer boat 2 includes a plurality of wafer slots 204, 206, and 2〇8, wherein the wafer slots & 、 4, 206, 208 are configured The wafers (not shown) are such that the surfaces of the wafers are flush with each other and are in the wafer boat 2, and the distance between the wafer slots is from the end portion 202 in the direction of the vertical wafer surface toward the end. Department 216 is gradually increasing. In the present embodiment, the boat 2 is divided into a first portion 218, a second portion 220, and a third portion 222 from the end portion 202 to the end portion 21 6 . The first portion 218 has a plurality of wafer slots 2 〇 4, and the wafer slots 2 〇 4 have the same pitch, and the second portion 220 has a plurality of wafer slots 2 〇 6 and crystal The circular slots 206 have the same spacing, while the third portion 2 2 2 has a plurality of wafer slots 208, and the wafer slots 2〇8 have the same spacing.

In addition, in the preferred embodiment of the present invention, the distance between the wafer slots 2〇6 21 can be designed to be the same as the spacing of the wafer slots in the conventional wafer boat, and the spacing of the wafer slots 204 is 210. The distance between the wafer slots 2〇6 is 21·6 times and the distance between the wafer slots 20.8 is 21 times, for example, twice the distance between the wafer slots 2〇6 and 21.2. Through such a design, it is possible to conform to the principle that the wafer slots are gradually increased from the end portion 2 0 2 along the vertical wafer surface toward the end portion 2]6, and at the same time, the crystal can be placed. The number of circles is not reduced

1270161 V. INSTRUCTIONS (6) Too few 'and thus can take into account the requirements of throughput. Although the wafer boat is divided into three parts in the above embodiments, the present invention is not limited thereto, and the number of parts distinguished by the boat and the wafer slot spacing may be required according to actual processes. Make adjustments. Fig. 3 is a schematic view showing the arrangement of a batch processing apparatus in which the wafer boat of the present invention is arranged. In the third embodiment, the same reference numerals are used for the same members as in the first embodiment, and the description thereof will be omitted. Referring to Figure 3, the batch processing apparatus is, for example, a vertical furnace tube reactor comprising at least a boat 2 and a gas inlet 106. The wafer boat 200 is disposed with the end portion 208 in the upper direction, and the end portion 216 is disposed on the lifting base 1 of the furnace tube 1 〇 2 for inserting the wafer on which the wafer is horizontally disposed. In the tank, for example, a chemical vapor deposition process or a doping process is performed, and the furnace tube 102 is, for example, a quartz tube. The first part of the boat 2 21 21 8 is located near the bottom of the furnace tube 1 〇 2, and the third part of the boat 2 2 2 2 2 is located near the top of the furnace tube 1 〇 2 . In addition, the gas inlet 106 is, for example, a gas injector disposed near the bottom of the furnace tube 02, wherein the injection direction of the reaction gas is from the bottom of the furnace tube 1〇2 toward the top portion 11 of the furnace tube 1〇2, In order to allow the reaction gas to flow from bottom to top, diffuse and flow through the surface of the wafer. Please continue to refer to Figure 3 for a detailed description of the process for processing wafers using the batch processing apparatus described above. Taking a chemical vapor deposition process as an example, first, the wafers 204a, 206a, and 208a are disposed in a wafer slot on the wafer boat 200, and the reaction gas is injected from the outside through the gas inlet 106, and then the furnace tube 10 The bottom portion 11 2 of the second portion 2 2 flows toward the top portion 11 4 (that is, from the end portion 2 0 2 of the wafer boat 200 toward the end portion 2 1 6 ), diffuses and flows through the wafer 2 0 4a in the furnace tube 1 、 2,

11741twf.ptd Page 10 1270161 V. INSTRUCTION DESCRIPTION (7) The surface of the 2〇6a and 208a' is then supplied with heat in the furnace tube 102 by the heating devices Z1 to Z5 disposed on the outer wall of the furnace tube 1〇2, and the input is The reaction gas chemically reacts with the surfaces of the wafers 204a, 20 6a, and 208a to form a thin film on the surface thereof.

In the above wafer processing process, since the present invention has two regions of the wafer boat, the spacing between the wafers is gradually increased from the end portion 2 〇 2 to the end portion 2 j 6 . . The reaction gas system is injected through the gas inlet 1 〇 6 and flows to the bottom portion 114 of the furnace tube 1 〇 2 at the bottom portion 112 of the furnace tube 102. Therefore, the flow velocity of the reaction gas toward the top of the furnace tube 1 〇 2 is accelerated, and the wafer boat is accelerated. 2 〇〇 first: the spacing of the wafer slots in the portion 2 1 8 is small, so the reaction rate of the reaction gas and the surface of the circle 204a here is slow, and the top of the furnace tube 1 〇 2 can be provided. High reaction gas concentration. For the top of the furnace tube 1〇2, since the pitch of the wafer is widened, the flow rate of the reaction gas level entering the wafer pitch is also increased in the case where the gas flow rate is fast and the concentration is increased. Moreover, as the boundary layer between the gas stream and the wafer surface becomes thinner and the concentration is increased, the flow rate of the reaction gas vertically deposited downward also increases. For the bottom portion of the furnace tube 102, since the pitch of the wafer is narrowed, the horizontal flow rate and the vertical flow rate of the reaction gas are correspondingly reduced, thereby causing the deposition rate of the reaction gas at the top and the bottom in the furnace tube. The gap will narrow.

And ^, in response to the deposition speed of the reaction gas at the top and bottom of the furnace tube] the temperature gradient of the heaters z 1~z5 can also be reduced, so that the difference between the thermal budget of the top and bottom of the furnace can be reduced, therefore, deposition In terms of process, it is possible to have the same film characteristics of the same batch of wafers' and to reduce the electrical difference between wafers.

1270161 V. INSTRUCTIONS (8) Round, located at the top of the furnace tube, $1* * 言' is the purpose of making the difference between the wafer strength difference between the same batch of crystals and the wafer at the bottom of the furnace tube. . Furthermore, it is also possible to achieve an electric boat that reduces the inter-wafer. In this issue 2 = ^ circle process is not limited to the use of the above-mentioned crystals to use the conventional Τ:: The actual wafer processing process can also be used in the day of the boat's batch processing equipment to clean}, 1 ί ^^ - ^ ^ /Λ Λ ^ The same as the same; number ί ϊ; in Figure 4 'the same as the first figure is used as the first π one, description. Referring to Fig. 4, the boat 11 is divided into a knife, a second portion 420, and a third portion 422. In the first 2, 'wafer 1083 is inserted into each of the wafer slots, for example, and in the second part 422, the wafer is 1〇8〇: for example, the wafer is separated by two wafers. 108a, observation, inspection according to the above configuration of the boat 110, and then the reaction gas from the outside through the gas inlet 1 〇 6 Note = two, from the bottom 112 of the furnace tube 102 to the top 114 (that is, located by the boat The end of the bottom of the furnace is flowing toward the end of the furnace tube, diffusing and flowing through the surfaces of the wafers 8a, 8b, 8b, and 8c in the furnace 102, and then disposed in the furnace tube 102. The heating devices Z1 to 25 of the outer wall provide heat energy in the furnace tube 1〇2, and the input reaction gas will chemically react with the surfaces of the wafers 1〇8a, 1〇8b and 10〇8c, on the surface thereof. A film is formed. In the present embodiment, the wafers are placed in the wafer boat 110 with the same pitch of the wafer slots, and the wafers are placed at intervals of a plurality of wafer slots.

11741twf.ptd Page 12 1270161 V. Invention Description (9), the fruit system can also make the wafer & spacing is by the boat! 1〇 The end of the bottom of the furnace tube: ::1) 2 increases toward the other end of the top 14 of the furnace tube, and thus the same month, the purpose of reducing the electrical difference of the same batch of wafers is achieved. Similarly, although in FIG. 4, the boat is divided into three parts, the present invention is not limited thereto, and the number of parts distinguished from the boat and the distance between the eight B and the circle may be in accordance with the actual process. Need to make adjustments. Fig. 5 is a graph showing the relationship between the intensity of arsenic in the wafer and the placement position of the wafer when the arsenic is doped without using the present embodiment and the conventional technique. Please: ^ Take the first picture and the fifth picture. In the prior art, the wafer J Μ is arranged in one wafer slot, so the wafers 1 〇 8 are arranged at equal intervals in the wafer boat 11 In the crucible, the strong production of arsenic in the wafer 1〇8 disposed near the bottom of the furnace tube: 4.7%, and disposed in the wafer 1〇8 near the middle portion of the furnace tube, the arsenic ς = degree is, for example, 4.15 %, and disposed near the top of the furnace tube, and referring to FIG. 4 and FIG. 5 simultaneously, in the doping process of arsenic, the wafer month=8a, l08b, and 1〇8c are spaced apart in the wafer slot. In ιΐ639, the intensity of arsenic in wafer 1〇8a is, for example, 0.455%, and the intensity of quinone in wafer i08b is, for example, 4.46%, and the intensity of arsenic in wafer i〇8c is, for example, 4, % ' The solid line curve in Figure 5 is shown. · Hey. As can be seen from Fig. 5, in the embodiment of Fig. 4 of the present invention, the intensity of arsenic in the bottom and top crystals differs by only 〇·4%, whereas in the prior art, the bottom and the j ^ intensity are different by 〇.94 % ' Therefore, it can be clearly seen that the 7th a < a yoke example can reduce the difference range by 5.7 % compared with the prior art, thereby greatly improving the wafer shrinkage in the prior art.

Page 13 Shirt strength 1270161 V. Invention description (10) The problem of excessive difference. Fig. 6 is a view showing the temperature of the embodiment of Fig. 4 of the present invention and the addition of the devices Z1 to Z5 in the prior art, and referring to Fig. 1 and Fig. 6 in Fig. 1, the tube The heating device π of the bottom portion 112 of the 102 provides a temperature of 608 · 5 degrees Celsius, and the heating of the top portion 114 of the furnace tube 1 〇 2 provides a temperature of 653 degrees Celsius, so that it is close to the top ι 4 ^ The heating device Ζ1 is different from the heating device Ζ5 near the bottom by 445 degrees Celsius. 2, while referring to FIG. 4 and FIG. 6, in the present embodiment, the temperature of the heating device Ζ5 of the bottom portion 112 of the furnace tube 102 is 6 〇 8 5 J, and the top of the furnace tube 102 is 丨The heating device Z1 of 14 provides a temperature of 634 degrees Celsius, so the heating device Z1 near the top 114 and the heating device Z5 near the bottom Π2 differ only by 26.5 degrees Celsius. Compared with the prior art, the embodiment of the present invention reduces the temperature difference between the heating devices 21 to 25 by 4%, and can greatly improve the problems caused by the excessive thermal budget difference in the prior art. FIG. 7 is a diagram showing the relationship between the resistance value and the placement position of the wafer after the wafer is subjected to another thermal process to drive the substrate by using the present embodiment and the conventional technique for doping polysilicon. Figure. It can be seen from FIG. 6 that the thermal budget between the wafers in the inter-wafer technology in the embodiment of the present invention is uniform, and the difference in resistance between the wafers is also higher than that of the prior art. The resistance between wafers is small. Please refer to the same at the same time! In Fig. 7 and Fig. 7, the resistance value measured by the wafer 108 near the bottom W12 of the furnace tube ι2 is 44 〇〇/s (iuare, and is measured near the wafer 108 of the middle portion of the furnace tube 102). The resulting resistance is 532

Page 14 1270161 V. Description of the invention (11) ohm/square 'the resistance value measured on the wafer 1〇8 near the top 1H of the furnace tube 102 is 570 ohm/square 'The difference in the resistance value between the wafers The line is 130 ohm/square. However, please refer to FIG. 4 and FIG. 7 at the same time, the resistance value measured on the wafer 1 〇 8 a near the bottom 11 2 of the furnace tube 102 is 4 8 2 ohm/square 'and close to the middle of the furnace tube 102 The resistance value measured by the wafer 1 〇 51 is 511.5 ohm/scuiare, and the resistance value measured by the round hole 1 0 8 c near the top 114 of the furnace tube 1 〇 2 is 5 4 〇 hm / Square, the difference in resistance between the wafers is 58 ohm/square. Therefore, it can be seen that the embodiment of the fourth embodiment of the present invention can reduce the difference range of the wafer resistance values in the prior art by 55%, and greatly improve the problem that the wafer electrical difference is too large in the prior art, thereby avoiding Defective products are produced in processes where the line width is less demanding. According to the above description, the present invention provides a crystal boat which can be used in a batch processing apparatus such as a vertical hot tube tube by which the wafer slot pitch is from the bottom of the furnace tube to the top ( Equivalently increasing along the gas supply and flow direction, so that the same batch of wafers can have the same film characteristics, and can improve the thermal budget of the same batch of wafers in the prior art. The problem of too much electrical difference between wafers is to reduce the generation of defective products. Moreover, by appropriately adjusting the wafer slot pitch of the wafer boat, the wafer placement amount of the wafer boat can be prevented from being reduced too much, thereby maintaining the yield of the processing device using the wafer boat. Moreover, the present invention can also be applied to a batch processing apparatus such as a vertical hot tube by using a conventional wafer boat, by placing the wafers therebetween.

11741twf.ptd Page 15 1270161 V. INSTRUCTIONS (12) The distance is gradually increased from the bottom of the furnace tube to the top (equivalent to the gas supply and flow direction), and the wafers of the same batch can have the same thin chess. It is ambiguous and reduces the problem of too much electrical difference between wafers, reducing and finding. The present invention is defined by the scope of the invention, and the scope of the invention is defined by the scope of the patent application. The protection of the present invention 1270161 is simple to say ^ -------- Figure. FIG. 2 is a cross-sectional view showing a conventional vertical tube reactor. FIG. 2 is a view showing a wafer boat according to a preferred embodiment of the present invention. FIG. 3 is a schematic view showing a batch type according to a preferred embodiment of the present invention. Device configuration diagram configurationΓ. The figure shows a batch device of another preferred embodiment of the present invention. FIG. 5 is a diagram showing the relationship between the intensity of arsenic in the wafer and the placement position of the wafer during the arsenic process using the present embodiment and the prior art. Figure 6 is a schematic view showing the temperatures provided by the heating devices ζι to Z5 in the present embodiment and the prior art. Fig. 7 is a graph showing the relationship between the resistance value exhibited by the wafer after another thermal process and the placement position of the wafer when the doping process is performed by the present embodiment and the conventional technique. [Description of Patterns] 100: Base 1 0 2 : Furnace tube 106: gas inlets 108, 108a, l〇8b, 108c, 204a, 206a, 208a: wafer 110, 200: boat 11 2: bottom of furnace tube 11 4 : Top of the tube 2 0 2, 2 1 6 : End 2 04, 20 6, 208 : Wafer slot

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11741twf.ptd Page 18

Claims (1)

1270161 VI. Application of Succession®, 1-1. A wafer boat suitable for use in a batch of processing apparatus, wherein there are a plurality of wafer slots between the first end and the second end of the wafer boat And the plurality of wafers disposed in the plurality of wafers are parallel to each other, wherein the distance between the wafer slots is determined by the first/cr/c of the wafer boat The direction perpendicular to the surface of the wafer gradually increases toward the second end. 2. The wafer boat of claim 1, wherein the wafer boat is divided into a first portion, a second portion, and a third portion from a direction in which the first end portion faces the second end portion. And each of the wafer slots located in the second portion are equidistant from each other, and each of the wafer slots located in the third portion are equidistant from each other. Μ 3·- batch processing device, comprising at least: a wafer boat having a plurality of wafer slots between a first end and a second end of the wafer boat, and the wafers The socket is configured to have a plurality of wafers disposed therein, the surfaces of the wafers being parallel to each other; and a gas inlet, wherein the gas inlet provides a gas from the first end toward the end portion to allow the gas to The wafers are reacted, wherein the distance between the wafer slots is gradually increased from the first end of the wafer boat toward the second end. 4. The batch processing apparatus according to claim 3, wherein the f ^ boat is divided into a first portion, a second portion and a second portion by the first end portion toward the second end portion. And a third portion, wherein each of the plurality of wafer slots in the first portion are equal to each other, and each of the wafer slots in the second portion are equal to each other, and are still located at the third portion unit 1270161 VI. Patent Application Range Each of the wafer slots is equal to each other. 5. The batch processing apparatus of claim 3, wherein the batch processing apparatus comprises a vertical hot tube. 6. The batch processing apparatus of claim 5, wherein the wafer boat is disposed at a bottom of the vertical hot tube with the first end, and the first end faces the first The direction of the two ends is the same as the direction from the bottom of the vertical hot tube to the top of the vertical hot tube. 7) The batch processing skirt according to item 5 of the application scope, wherein the gas inlet is disposed at the bottom of the vertical hot furnace tube, and the gas system flowing out from the gas inlet is from the vertical hot furnace The bottom of the tube flows toward the top of the vertical hot tube. 8. The batch processing apparatus of claim 5, wherein the wafer boat is divided into a lower section by a bottom of the vertical hot furnace tube toward a top of the vertical hot furnace tube, a middle portion and an upper portion, and each of the wafer slots located in the lower portion is equidistant from each other, and each of the wafer slots in the middle portion is equidistant from each other, and is located in the upper portion Each of the wafer slots is equal to each other. ^ 9· A wafer processing process suitable for a batch processing apparatus, wherein the batch processing apparatus has at least: a wafer boat, wherein the first end to the second end of the wafer boat The inter-system can be configured to configure a plurality of wafers with the surfaces of the wafers being parallel to each other; and y^ a gas inlet, wherein the gas inlet is provided by the first end toward the first portion One gas / ', in order to react the fluorine with the wafers; 11741twf.ptd 20th 1270161 VI. Patent application scope The wafer processing process at least includes: arranging the day skin in the boat by #^ a # ^ ^ & - Day back, where the spacing of the wafers is set by the first end of the day, 翱A 荣 — - u _ 六 、, _ # # Ζ gradually toward the first 舳Adding; and processing the wafers with the batch processing device. 10. If you apply the first end of the crystal boat as described in item 9 of the scope of the special case to the first 嫂 之 „ : : : : : : : : : : : : : : : : : Further, a plurality of wafer slots are included, and the Μ2曰曰0 series are individually disposed in the wafer slots. Π·The wafers described in claim 10 (3) The wafer slots in the beans The spacing is from the 兮筮 兮筮 / / / /, £ 1 示 田 This day, the first end of the child of the Japanese Dan gradually increases toward the second end. 12. The wafer processing process of claim 11, wherein the wafer boat is divided into a fourth portion, a second portion, and a first end portion toward the second end portion. And a third part, wherein each of the plurality of wafer slots in the second portion are equal to each other, and each of the wafer slots located in the third portion are equal to each other. 1 3 The wafer processing process of claim 2, wherein the wafer slots are equidistant from each other, and the wafers are spaced apart by wafer inter-wafer spacing The number of slots is adjusted. 1 4. The wafer processing process of claim 3, wherein each of the wafers disposed in the first portion is equidistant from each other and disposed in each of the second portions The wafers are equidistant from each other, and each of the wafers disposed in the third portion is equidistant from each other. 1 5 - The wafer processing process as described in claim 9 wherein the batch processing apparatus comprises a vertical hot tube. 11741twf.ptd Page 21 1270161 VI. Patent Application Range 1 6. The wafer processing process described in claim 15 of the application scope, wherein the step of processing the wafers by the batch processing apparatus includes using The vertical hot tube performs a chemical vapor deposition process on the wafers. 1 7. The wafer processing process of claim 15, wherein the step of processing the wafers by the batch processing device comprises using the vertical hot tube to perform the wafers Doping process. 11741twf.ptd Page 22