TW202220950A - 感放射線性樹脂組成物及抗蝕劑圖案的形成方法 - Google Patents

感放射線性樹脂組成物及抗蝕劑圖案的形成方法 Download PDF

Info

Publication number
TW202220950A
TW202220950A TW110138985A TW110138985A TW202220950A TW 202220950 A TW202220950 A TW 202220950A TW 110138985 A TW110138985 A TW 110138985A TW 110138985 A TW110138985 A TW 110138985A TW 202220950 A TW202220950 A TW 202220950A
Authority
TW
Taiwan
Prior art keywords
group
carbon atoms
hydrocarbon group
monovalent
radiation
Prior art date
Application number
TW110138985A
Other languages
English (en)
Chinese (zh)
Inventor
横井寛生
根本龍一
Original Assignee
日商Ｊｓｒ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Publication of TW202220950A publication Critical patent/TW202220950A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
TW110138985A 2020-11-26 2021-10-21 感放射線性樹脂組成物及抗蝕劑圖案的形成方法 TW202220950A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-196137 2020-11-26
JP2020196137 2020-11-26

Publications (1)

Publication Number Publication Date
TW202220950A true TW202220950A (zh) 2022-06-01

Family

ID=81754400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110138985A TW202220950A (zh) 2020-11-26 2021-10-21 感放射線性樹脂組成物及抗蝕劑圖案的形成方法

Country Status (3)

Country Link
JP (2) JPWO2022113663A1 (https=)
TW (1) TW202220950A (https=)
WO (1) WO2022113663A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202346263A (zh) * 2022-05-23 2023-12-01 日商Jsr 股份有限公司 感放射線性樹脂組成物及圖案形成方法
TW202346264A (zh) * 2022-05-23 2023-12-01 日商Ｊｓｒ股份有限公司 感放射線性樹脂組成物及圖案形成方法
CN119768738A (zh) * 2022-11-30 2025-04-04 Jsr株式会社 感放射线性树脂组合物、图案形成方法及感放射线性酸产生剂

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5750272B2 (ja) * 2010-02-18 2015-07-15 東京応化工業株式会社 レジストパターン形成方法
JP5793331B2 (ja) * 2011-04-05 2015-10-14 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
JPWO2022113663A1 (https=) 2022-06-02
WO2022113663A1 (ja) 2022-06-02
JP2026065160A (ja) 2026-04-14

Similar Documents

Publication Publication Date Title
JP7605266B2 (ja) 感放射線性樹脂組成物及びレジストパターンの形成方法
US12517429B2 (en) Radiation-sensitive resin composition and method for forming pattern
TW202222780A (zh) 感放射線性樹脂組成物、圖案形成方法及鎓鹽化合物
JP7622654B2 (ja) 感放射線性樹脂組成物及びレジストパターンの形成方法
JP2017181697A (ja) 感放射線性樹脂組成物及びレジストパターン形成方法
TW202126609A (zh) 感放射線性樹脂組成物及圖案形成方法
TW202140420A (zh) 感放射線性樹脂組成物及使用其的抗蝕劑圖案的形成方法、基板的加工方法、金屬膜圖案的製造方法、以及磺酸鹽化合物及包含其的感放射線性酸產生劑
JP2026065160A (ja) 化合物及び感放射線性酸発生剤
TW202437008A (zh) 感放射線性組成物、圖案形成方法及感放射線性酸產生劑
TW202346264A (zh) 感放射線性樹脂組成物及圖案形成方法
TW202233570A (zh) 感放射線性樹脂組成物及圖案形成方法
JP7323865B2 (ja) 感放射線性樹脂組成物及びパターン形成方法
TW202525965A (zh) 感放射線性組成物、圖案形成方法及感放射線性酸產生劑
TW202515846A (zh) 感放射線性組成物、圖案形成方法及化合物
US20240393687A1 (en) Radiation-sensitive resin composition and pattern formation method
TWI869618B (zh) 感放射線性樹脂組成物、圖案形成方法及鎓鹽化合物
TW202513528A (zh) 感放射線性組成物、圖案形成方法及鎓鹽
TW202449515A (zh) 感放射線性組成物、圖案形成方法及鎓鹽化合物
TW202449514A (zh) 感放射線性組成物、圖案形成方法及鎓鹽化合物
TW202146390A (zh) 感放射線性樹脂組成物、圖案形成方法及鎓鹽化合物
TW202346261A (zh) 感放射線性樹脂組成物及圖案形成方法
TW202346263A (zh) 感放射線性樹脂組成物及圖案形成方法
TWI887523B (zh) 感放射線性樹脂組成物、抗蝕劑圖案的形成方法、聚合物及化合物
TW202229368A (zh) 感放射線性樹脂組成物、抗蝕劑圖案的形成方法及撥水性改善劑
TW202231626A (zh) 感放射線性樹脂組成物及使用其的抗蝕劑圖案的形成方法、以及鋶鹽化合物及包含鋶鹽化合物的感放射線性酸產生劑