TW202220069A - Wire bonding apparatus and method for manufacturing semiconductor device - Google Patents

Wire bonding apparatus and method for manufacturing semiconductor device Download PDF

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TW202220069A
TW202220069A TW110124530A TW110124530A TW202220069A TW 202220069 A TW202220069 A TW 202220069A TW 110124530 A TW110124530 A TW 110124530A TW 110124530 A TW110124530 A TW 110124530A TW 202220069 A TW202220069 A TW 202220069A
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wire
ball
nozzle
thin
crimping
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TW110124530A
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Chinese (zh)
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TWI827950B (en
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吉野浩章
手井森介
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日商新川股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

Provided is a method for manufacturing a semiconductor device which connects a first bond point and a second bond point by a wire. The method includes: a ball bonding step in which a crimping ball and a ball neck are formed at the first bond point by ball bonding; a thin-walled portion forming step in which a thin-walled portion having a reduced cross-sectional area is formed between the ball neck and the crimping ball; a wire tail separating step in which after a capillary is raised to unroll a wire tail, the capillary is moved in a direction to the second bond point, and the wire tail and the crimping ball are separated in the thin-walled portion; and a wire tail joining step in which the capillary is lowered and a side surface of the separated wire tail is joined onto the crimping ball.

Description

打線接合裝置及半導體裝置的製造方法Wire bonding device and method of manufacturing semiconductor device

本發明涉及一種打線接合裝置的結構及使用此打線接合裝置的半導體裝置的製造方法。The present invention relates to a structure of a wire bonding apparatus and a method for manufacturing a semiconductor device using the wire bonding apparatus.

近年來，要求半導體晶片的薄型化。為了滿足此要求，需要將利用打線接合形成的環形導線的高度抑制得低。因此，一直以來，提出了很多抑制環高度的低環技術。In recent years, thinning of semiconductor wafers has been demanded. In order to satisfy this requirement, it is necessary to suppress the height of the looped wire formed by wire bonding to be low. Therefore, many low-ring technologies for suppressing the height of the ring have been proposed.

例如，提出一種在進行球形接合（ball bonding）後，使瓷嘴（capillary）上升而使導線尾端延伸出後，使瓷嘴上升而切斷導線尾端，將切斷的導線尾端接合在壓接球上，由此將環高度抑制得低的接合方法（例如，參照專利文獻1）。For example, after ball bonding is performed, the capillary is raised to extend the end of the wire, the capillary is raised to cut the end of the wire, and the cut end of the wire is bonded to the end of the wire. A bonding method in which the ring height is kept low by crimping the balls (for example, refer to Patent Document 1).

另外，提出一種方法，在第一接合點進行球形接合後，使瓷嘴水平移動來削去壓接球上的球頸，然後使瓷嘴上升而使導線尾端延伸出，將延伸出的導線尾端的側面多次按壓在壓接球上之後，使瓷嘴朝向第二接合點移動，由此抑制環高度（例如，參照專利文獻2）。 [現有技術文獻] [專利文獻] In addition, a method is proposed. After the ball joint is performed at the first joint, the ceramic nozzle is moved horizontally to cut off the ball neck on the crimping ball, and then the ceramic nozzle is raised to extend the end of the wire. After the side surface of the tail end is pressed against the crimping ball many times, the mouthpiece is moved toward the second joint point, thereby suppressing the ring height (for example, refer to Patent Document 2). [Prior Art Literature] [Patent Literature]

日本專利特開2017-112197號公報Japanese Patent Laid-Open No. 2017-112197

[發明所要解決的問題] 但是，即使如專利文獻1中記載的現有技術那樣使瓷嘴向正上方上升來進行導線尾端的延出、切斷，導線尾端也不位於瓷嘴的面部的下側，因此難以利用瓷嘴將導線尾端接合在壓接球上，因此，存在實現性的問題。 [Problems to be Solved by Invention] However, even if the nipple is raised directly upward to extend and cut the lead end as in the prior art described in Patent Document 1, the lead end is not positioned below the surface of the nipple, making it difficult to use the nipple. The wire tail is bonded to the crimp ball, and therefore, there is a problem of implementation.

另外，在專利文獻2的方法中，按壓部分的導線尾端的剖面面積變小，存在導線的環形狀受到限制的情況。In addition, in the method of Patent Document 2, the cross-sectional area of the wire tail end of the pressing portion is reduced, and the loop shape of the wire may be limited.

因此，本發明的目的在於提供一種能夠形成環形狀的自由度大的低環形導線的打線接合裝置。 [解決問題的技術手段] Therefore, an object of the present invention is to provide a wire bonding apparatus for forming a low loop wire with a large degree of freedom in a loop shape. [Technical means to solve the problem]

本發明的半導體裝置的製造方法是利用導線將第一接合點與第二接合點之間連接的半導體裝置的製造方法，其特徵在於包括：準備步驟，準備打線接合裝置，所述打線接合裝置包括供導線插通的瓷嘴、及使瓷嘴移動的移動機構；球形接合步驟，在插通於瓷嘴的導線的前端形成無空氣球後，使瓷嘴的前端下降至壓接高度，將無空氣球與第一接合點接合而形成壓接球與壓接球的上側的球頸；薄壁部形成步驟，使瓷嘴的前端在水平方向上移動，在球頸與壓接球之間形成減小了剖面面積的薄壁部；導線尾端分離步驟，使瓷嘴上升而抽出導線尾端後，使瓷嘴向第二接合點的方向移動，在薄壁部將導線尾端與壓接球分離；以及導線尾端接合步驟，使瓷嘴下降而將分離的導線尾端的側面接合在壓接球上。The method of manufacturing a semiconductor device of the present invention is a method of manufacturing a semiconductor device in which a first bonding point and a second bonding point are connected by wires, and is characterized by comprising: a preparation step of preparing a wire bonding device, the wire bonding device comprising: The ceramic nozzle for the wire to be inserted through, and the moving mechanism for moving the ceramic nozzle; in the ball joint step, after the front end of the wire inserted into the ceramic nozzle forms an air-free ball, the front end of the ceramic nozzle is lowered to the crimping height, and the no air ball is formed. The air ball is engaged with the first joint point to form the crimp ball and the ball neck on the upper side of the crimp ball; the thin-walled part is formed by moving the front end of the porcelain nozzle in the horizontal direction to form between the ball neck and the crimp ball Thin-walled part with reduced cross-sectional area; in the step of separating the wire tail, the ceramic nozzle is raised and the wire tail is pulled out, then the ceramic nozzle is moved to the direction of the second junction point, and the wire tail is crimped at the thin-walled part. ball separation; and a wire tail engaging step of lowering the nipple to engage the sides of the separated wire tails on the crimp balls.

由於通過薄壁部形成步驟形成減小了球頸與壓接球的連接部分的剖面面積的薄壁部之後將導線尾端從壓接球分離，因此可以小的拉伸荷重將導線尾端從壓接球分離。另外，由於使瓷嘴向第二接合點的方向移動，在薄壁部將導線尾端與壓接球分離，因此切斷的導線尾端進入瓷嘴的第一接合點側下方。因此，可將導線尾端的側面接合在壓接球上，使導線延伸的方向成為水平方向而可降低環高度。Since the wire tail ends are separated from the crimp ball after forming the thin-walled portion that reduces the cross-sectional area of the connection portion between the ball neck and the crimping ball by the thin-walled portion forming step, the wire tail end can be separated from the crimping ball with a small tensile load. Crimp ball separation. In addition, since the nozzle is moved in the direction of the second junction to separate the lead end from the crimp ball at the thin portion, the cut lead end enters below the first junction side of the nozzle. Therefore, the side surface of the end of the wire can be joined to the crimp ball, and the direction in which the wire extends can be made horizontal, thereby reducing the height of the ring.

在本發明的半導體裝置的製造方法中，也可包括在形成薄壁部之後，使瓷嘴向第二接合點的方向呈圓弧狀地往復移動而使導線彎曲變形的導線尾端彎曲步驟。The manufacturing method of the semiconductor device of the present invention may include a wire tail bending step of bending and deforming the wire by reciprocating the nozzle in the direction of the second junction after the thin-walled portion is formed.

如此，由於使導線彎曲變形，因此在將導線尾端從壓接球分離時，可保持導線尾端進入瓷嘴的第一接合點側的下方的狀態，可確實地將導線尾端的側面接和在壓接球上，而可降低環高度。In this way, since the lead wire is bent and deformed, when the lead end end is separated from the crimp ball, the state in which the lead end end enters the lower part of the first joint point side of the ceramic nozzle can be maintained, and the side surface of the lead end end can be surely connected with each other. On the crimp ball, the ring height can be lowered.

在本發明的半導體裝置的製造方法中，薄壁部形成步驟也可使瓷嘴上升到比壓接高度高的剪切高度，並使瓷嘴在水平方向上移動。In the manufacturing method of the semiconductor device of the present invention, in the thin-walled portion forming step, the nozzle may be raised to a shear height higher than the crimping height, and the nozzle may be moved in the horizontal direction.

由此，可確實地使球頸變形而形成薄壁部。Thereby, the ball neck can be surely deformed to form a thin portion.

在本發明的半導體裝置的製造方法中，薄壁部形成步驟也可在形成薄壁部時使瓷嘴在水平方向上往復動作。In the manufacturing method of the semiconductor device of the present invention, the thin portion forming step may cause the nozzle to reciprocate in the horizontal direction when forming the thin portion.

由此，可極力減小球頸與壓接球的連接部分的剖面面積，並且可抑制連接部分的剖面面積大小的偏差。其結果，在切斷導線尾端時，能夠使從瓷嘴的前端延伸出的導線尾端的形狀穩定。Thereby, the cross-sectional area of the connecting portion between the ball neck and the crimp ball can be reduced as much as possible, and the variation in the size of the cross-sectional area of the connecting portion can be suppressed. As a result, when the lead end is cut, the shape of the lead end extending from the tip of the nozzle can be stabilized.

在本發明的半導體裝置的製造方法中，導線尾端分離步驟也可在薄壁部將導線尾端從壓接球分離時，使瓷嘴朝向第二接合點的方向向斜上方移動。In the manufacturing method of the semiconductor device of the present invention, the wire tail separation step may move the nozzle obliquely upward in the direction toward the second bonding point when the thin-walled portion separates the wire tail from the crimping ball.

由此，可抑制切斷的導線尾端與壓接球接觸而再次接合，而可提高打線接合的穩定性。As a result, it is possible to prevent the end of the cut wire from coming into contact with the crimp ball and to be rejoined, thereby improving the stability of wire bonding.

在本發明的半導體裝置的製造方法中，導線尾端接合步驟中，可在將導線尾端的側面接合到壓接球上時，使瓷嘴的第一接合點側的面部移動到壓接球的與第二接合點相反一側的端部上方之後，使瓷嘴下降而利用瓷嘴的面部將彎曲變形的導線尾端的側面接合在壓接球的與第二接合點相反一側的端部上。In the manufacturing method of the semiconductor device of the present invention, in the wire tail bonding step, when the side surface of the wire tail is bonded to the crimping ball, the surface on the first bonding point side of the ceramic nozzle may be moved to the surface of the crimping ball. After the end on the opposite side of the second junction point is above, the nozzle is lowered, and the side surface of the bent and deformed wire tail end is joined to the end of the crimp ball on the opposite side of the second junction point using the surface of the nozzle. .

由此，可將導線尾端的側面確實地接合在壓接球上。Thereby, the side surface of the wire tail end can be surely joined to the crimp ball.

本發明的打線接合裝置是利用導線將第一接合點與第二接合點之間連接的打線接合裝置，其特徵在於包括：瓷嘴，供導線插通；移動機構，使瓷嘴移動；以及控制部，控制移動機構的驅動，且控制部是在插通於瓷嘴的導線的前端形成無空氣球後，使瓷嘴的前端下降到壓接高度，使無空氣球與第一接合點接合而形成壓接球與壓接球上側的球頸，且使瓷嘴的前端在水平方向上移動，在球頸與壓接球之間形成減小了剖面面積的薄壁部，在使瓷嘴上升而抽出導線尾端後，使瓷嘴向第二接合點的方向移動，在薄壁部將導線尾端與壓接球分離， 且使瓷嘴下降而將已分離的導線尾端的側面接合在壓接球上。 The wire bonding device of the present invention is a wire bonding device that uses a wire to connect the first joint point and the second joint point. The control part controls the driving of the moving mechanism, and the control part is to lower the front end of the ceramic nozzle to the crimping height after forming the airless ball at the front end of the wire inserted through the porcelain nozzle, so that the airless ball is engaged with the first junction point. The crimping ball and the ball neck on the upper side of the crimping ball are formed, and the front end of the nipple is moved in the horizontal direction, and a thin-walled part with a reduced cross-sectional area is formed between the ball neck and the crimping ball, and the nipple is raised. After pulling out the tail end of the wire, move the porcelain nozzle to the direction of the second joint, and separate the tail end of the wire from the crimping ball at the thin-walled part. And the porcelain nozzle is lowered to engage the side surface of the separated wire tail on the crimp ball.

在本發明的打線接合裝置中，可為：控制部是在形成球頸後，使瓷嘴上升到比壓接高度高的剪切高度，並使瓷嘴在水平方向上往復移動而形成薄壁部，在形成薄壁部之後，使瓷嘴向第二接合點的方向呈圓弧狀地往復移動，使導線彎曲變形，且在薄壁部將導線尾端從壓接球分離時，使瓷嘴朝向第二接合點的方向向斜上方移動，當將導線尾端的側面接合在壓接球上時，使瓷嘴的第一接合點側的面部移動到壓接球的與第二接合點相反一側的端部上方之後，使瓷嘴下降而利用瓷嘴的面部將彎曲變形的導線尾端的側面接合在壓接球的與第二接合點相反一側的端部上。 [發明的效果] In the wire bonding device of the present invention, after the ball neck is formed, the control part can raise the nozzle to a shear height higher than the crimping height, and reciprocate the nozzle in the horizontal direction to form a thin wall After the thin-walled portion is formed, the ceramic nozzle is moved back and forth in a circular arc in the direction of the second joint to bend and deform the wire, and when the thin-walled portion separates the end of the wire from the crimping ball, the ceramic The mouth moves obliquely upward in the direction of the second joint point, when the side of the wire tail is jointed on the crimp ball, the face of the porcelain mouth on the first joint point side is moved to the opposite side of the crimp ball and the second joint point. After one end is above, the nozzle is lowered, and the side surface of the bent and deformed wire tail end is joined to the end of the crimp ball on the opposite side of the second joining point by using the surface of the nozzle. [Effect of invention]

本發明可提供一種能夠形成環形狀自由度大的低環形導線的打線接合裝置。The present invention can provide a wire bonding device capable of forming a low loop wire with a large degree of freedom in loop shape.

以下，參照附圖對實施方式的打線接合裝置100進行說明。如圖1所示那樣，實施方式的打線接合裝置100包括：基座10、XY平臺11、接合頭12、Z方向馬達13、接合臂14、超聲波喇叭15、瓷嘴20、夾持器17、放電電極18、接合載台19、及控制部60。再者，在以下的說明中，將接合臂14或超聲波喇叭15的延伸方向作為X方向，將在水平面上與X方向成直角的方向作為Y方向，將上下方向作為Z方向進行說明。Hereinafter, the wire bonding apparatus 100 of the embodiment will be described with reference to the drawings. As shown in FIG. 1, the wire bonding apparatus 100 of the embodiment includes a base 10, an XY stage 11, a bonding head 12, a Z-direction motor 13, a bonding arm 14, an ultrasonic horn 15, a ceramic nozzle 20, a holder 17, Discharge electrode 18 , bonding stage 19 , and control unit 60 . In the following description, the extending direction of the bonding arm 14 or the ultrasonic horn 15 is referred to as the X direction, the direction perpendicular to the X direction on the horizontal plane is referred to as the Y direction, and the vertical direction is referred to as the Z direction.

XY平臺11安裝在基座10上，使搭載在上側的部件沿XY方向移動。The XY stage 11 is attached to the base 10 and moves the components mounted on the upper side in the XY directions.

接合頭12安裝在XY平臺11上並通過XY平臺11向XY方向移動。在接合頭12中收納有Z方向馬達13、及由Z方向馬達13驅動的接合臂14。Z方向馬達13具有定子13b。接合臂14為根部14a與Z方向馬達13的定子13b相向，並繞Z方向馬達13的軸13a旋轉自如地安裝的轉子。The bonding head 12 is mounted on the XY stage 11 and is moved in the XY direction by the XY stage 11 . A Z-direction motor 13 and a joining arm 14 driven by the Z-direction motor 13 are accommodated in the joining head 12 . The Z-direction motor 13 has a stator 13b. The engaging arm 14 is a rotor whose base portion 14 a faces the stator 13 b of the Z-direction motor 13 and is rotatably attached around the shaft 13 a of the Z-direction motor 13 .

在接合臂14的X方向的前端安裝有超聲波喇叭15，在超聲波喇叭15的前端安裝有瓷嘴20。超聲波喇叭15通過未圖示的超聲波振子的振動對安裝於前端的瓷嘴20進行超聲波勵振。瓷嘴20如後面參照圖2說明的那樣，在內部設置有沿上下方向貫通的貫通孔21，在貫通孔21中插通有導線16。The ultrasonic horn 15 is attached to the front end of the joint arm 14 in the X direction, and the ceramic nozzle 20 is attached to the front end of the ultrasonic horn 15 . The ultrasonic horn 15 ultrasonically excites the nozzle 20 attached to the tip thereof by the vibration of an ultrasonic vibrator (not shown). As described later with reference to FIG. 2 , the mouthpiece 20 is provided with a through hole 21 penetrating in the up-down direction inside, and the lead wire 16 is inserted through the through hole 21 .

另外，在超聲波喇叭15的前端的上側設有夾持器17。夾持器17開閉而進行導線16的握持、放開。In addition, a holder 17 is provided on the upper side of the front end of the ultrasonic horn 15 . The gripper 17 is opened and closed to hold and release the lead wire 16 .

在接合載台19的上側設置有放電電極18。放電電極18也可安裝在設置於基座10上的未圖示的框架上。放電電極18在與插通瓷嘴20並從瓷嘴20的前端25延伸出的導線16之間進行放電，使導線16熔融而形成無空氣球40。The discharge electrode 18 is provided on the upper side of the bonding stage 19 . The discharge electrode 18 may be attached to a frame (not shown) provided on the base 10 . The discharge electrode 18 discharges between the lead wire 16 inserted through the nozzle 20 and extended from the front end 25 of the nozzle 20 , and the lead wire 16 is melted to form the airless ball 40 .

接合載台19吸附固定在上表面安裝有半導體晶片34的基板30，同時利用未圖示的加熱器加熱基板30與半導體晶片34。The bonding stage 19 is sucked and fixed to the substrate 30 on which the semiconductor wafer 34 is mounted, and the substrate 30 and the semiconductor wafer 34 are heated by a heater (not shown).

構成轉子的接合臂14的根部14a利用接合頭12的Z方向馬達13的定子13b的電磁力如圖1中的箭頭71所示那樣旋轉時，安裝在超聲波喇叭15前端的瓷嘴20如箭頭72所示那樣向Z方向移動。另外，接合載台19通過XY平臺11而在XY方向上移動。因此，瓷嘴20通過XY平臺11及Z方向馬達13而在XYZ方向上移動。因此，XY平臺11與Z方向馬達13構成使瓷嘴20在XYZ方向上移動的移動機構11a。When the base 14a of the engaging arm 14 constituting the rotor rotates as indicated by the arrow 71 in FIG. Move in the Z direction as shown. In addition, the bonding stage 19 is moved in the XY direction by the XY stage 11 . Therefore, the mouthpiece 20 is moved in the XYZ directions by the XY stage 11 and the Z direction motor 13 . Therefore, the XY stage 11 and the Z-direction motor 13 constitute a moving mechanism 11a that moves the nozzle 20 in the XYZ directions.

XY平臺11、Z方向馬達13、夾持器17、放電電極18、及接合載台19連接於控制部60，基於控制部60的指令而驅動。控制部60利用包括XY平臺11及Z方向馬達13的移動機構11a，調整瓷嘴20的XYZ方向的位置，並且控制夾持器17的開閉、放電電極18的驅動、接合載台19的加熱。The XY stage 11 , the Z-direction motor 13 , the gripper 17 , the discharge electrode 18 , and the bonding stage 19 are connected to the control unit 60 , and driven based on an instruction from the control unit 60 . The control unit 60 controls the opening and closing of the gripper 17 , the driving of the discharge electrode 18 , and the heating of the bonding stage 19 by adjusting the position of the nozzle 20 in the XYZ direction using the moving mechanism 11 a including the XY stage 11 and the Z direction motor 13 .

控制部60是包括作為在內部進行信息處理的處理器的中央處理器（central processing unit，CPU）61、存儲動作程序或動作數據等的存儲器62的計算機。The control unit 60 is a computer including a central processing unit (CPU) 61 as a processor that internally processes information, and a memory 62 that stores an operation program, operation data, and the like.

接著，參照圖2說明瓷嘴20的結構。圖2是表示瓷嘴20的前端部的一例的圖。在瓷嘴20形成有沿中心線24的方向貫通的貫通孔21。在此貫通孔21中插通導線16。因此，貫通孔21的內徑d1比導線16的外徑d2大（d1＞d2）。貫通孔21的下端呈圓錐狀擴展。所述呈圓錐狀擴展的錐形部被稱為倒角部22。另外，此圓錐狀的空間中最大的直徑（即最下端的直徑）被稱為倒角直徑d3。Next, the structure of the mouthpiece 20 will be described with reference to FIG. 2 . FIG. 2 is a diagram showing an example of the tip portion of the mouthpiece 20 . A through hole 21 penetrating in the direction of the center line 24 is formed in the mouthpiece 20 . The lead wire 16 is inserted through the through hole 21 . Therefore, the inner diameter d1 of the through hole 21 is larger than the outer diameter d2 of the lead wire 16 (d1>d2). The lower end of the through hole 21 expands in a conical shape. The tapered portion that expands in a conical shape is referred to as a chamfered portion 22 . In addition, the largest diameter (that is, the diameter of the lowermost end) in this conical space is called a chamfering diameter d3.

瓷嘴20的下端面成為按壓圖1所示的無空氣球40的面部23。此面部23可以是平坦的水平面，也可以是隨著接近外側而向上方前進的傾斜面。將面部23的寬度、即，倒角部22與瓷嘴20的下端的外周的距離稱為“面部寬度W”。面部寬度W通過倒角直徑d3與瓷嘴20的外周直徑d4，以W=（d4-d3）/2計算。另外，在以下的說明中，將瓷嘴20的下端的中心線24上的點稱為瓷嘴20的前端25。The lower end surface of the mouthpiece 20 is the surface portion 23 that presses the airless ball 40 shown in FIG. 1 . The surface portion 23 may be a flat horizontal surface, or may be an inclined surface that advances upward as it approaches the outside. The width of the face portion 23 , that is, the distance between the chamfered portion 22 and the outer periphery of the lower end of the mouthpiece 20 is referred to as the “face portion width W”. The face width W is calculated by W=(d4-d3)/2 through the chamfering diameter d3 and the outer peripheral diameter d4 of the porcelain mouth 20. In addition, in the following description, the point on the center line 24 of the lower end of the mouthpiece 20 is referred to as the front end 25 of the mouthpiece 20 .

如圖2中點劃線所示那樣，將瓷嘴20的前端25加工到高度h1的點a而將圖1所示的無空氣球40按壓在焊盤35上時，無空氣球40被面部23按壓扁平化而形成直徑d5且厚度hb的扁平圓柱狀的壓接球41。另外，形成無空氣球40的金屬的一部分從倒角部22進入貫通孔21而形成球頸42，此球頸42包括與壓接球41的上側連接的圓錐狀部42a、及與圓錐狀部42a的上側連接的圓柱狀部42b。As shown by the dashed line in FIG. 2 , when the front end 25 of the nozzle 20 is processed to the point a of the height h1 and the airless ball 40 shown in FIG. 23 Press and flatten to form a flat cylindrical crimp ball 41 having a diameter d5 and a thickness hb. In addition, a part of the metal forming the airless ball 40 enters the through hole 21 from the chamfered portion 22 to form a ball neck 42 , and the ball neck 42 includes a conical portion 42 a connected to the upper side of the crimp ball 41 and a conical portion The upper side of 42a is connected to the cylindrical portion 42b.

圖3是利用打線接合裝置100形成的環形導線52的示意圖。在半導體晶片34上配設有多個焊盤35，在基板30上設置有多個引線31。打線接合裝置100利用環形導線52將位於此焊盤35上的第一接合點P1與位於引線31上的第二接合點P2連接。FIG. 3 is a schematic view of the looped wire 52 formed using the wire bonding apparatus 100 . A plurality of pads 35 are arranged on the semiconductor wafer 34 , and a plurality of leads 31 are arranged on the substrate 30 . The wire bonding apparatus 100 uses the ring wire 52 to connect the first bonding point P1 on the pad 35 with the second bonding point P2 on the lead 31 .

在第一接合點P1形成將導線16的一端按壓於焊盤35而形成的第一接合部50，從所述第一接合部50引出的環形導線52延伸到第二接合點P2。在第二接合點P2形成有將環形導線52的另一端按壓於引線31而形成的第二接合部51。此處，第二接合部51通常是將環形導線52推壓在引線31上而壓扁的針腳接合。A first bonding portion 50 formed by pressing one end of the wire 16 against the pad 35 is formed at the first bonding point P1 , and the looped wire 52 drawn from the first bonding portion 50 extends to the second bonding point P2 . A second bonding portion 51 formed by pressing the other end of the ring wire 52 to the lead wire 31 is formed at the second bonding point P2. Here, the second bonding portion 51 is usually a stitch bonding in which the ring wire 52 is pressed against the lead wire 31 to be flattened.

以下，參照圖4～圖9B對打線接合裝置100的形成第一接合部50、環形導線52、及第二接合部51的動作進行說明。在以下的說明中，將從第一接合點P1觀察而接近第二接合點P2的方向稱為“正向”，將遠離第二接合點P2的方向、或者從第一接合點P1觀察而與第二接合點P2相反的方向稱為“反向”。各圖中所示的“F”符號表示正向方向，“R”符號表示反向方向。另外，圖4所示的箭頭81～箭頭91對應於圖5～圖9B中所示的箭頭81～箭頭91。Hereinafter, the operation of forming the first bonding portion 50 , the loop wire 52 , and the second bonding portion 51 of the wire bonding apparatus 100 will be described with reference to FIGS. 4 to 9B . In the following description, the direction of approaching the second junction point P2 as seen from the first junction point P1 is referred to as the “forward direction”, and the direction away from the second junction point P2 or the direction of the opposite direction from the first junction point P1 when viewed from the first junction point P1 is referred to as “forward”. The opposite direction of the second junction point P2 is referred to as "reverse". The "F" symbol shown in each figure indicates the forward direction, and the "R" symbol indicates the reverse direction. In addition, arrows 81 to 91 shown in FIG. 4 correspond to arrows 81 to 91 shown in FIGS. 5 to 9B .

在形成第一接合部50的情況下，控制部60的處理器即CPU 61首先開放夾持器17，驅動控制XY平臺11及Z方向馬達13，使瓷嘴20的前端25移動至放電電極18的附近。然後，CPU 61使放電電極18與從瓷嘴20的前端25延伸出的導線16之間發生放電，將從瓷嘴20的前端25延伸出的導線16成形為無空氣球40。When forming the first joint portion 50 , the CPU 61 , which is the processor of the control portion 60 , first opens the gripper 17 , drives and controls the XY stage 11 and the Z-direction motor 13 , and moves the tip 25 of the nozzle 20 to the discharge electrode 18 . near. Then, the CPU 61 generates discharge between the discharge electrode 18 and the lead wire 16 extending from the front end 25 of the nozzle 20 , and shapes the lead wire 16 extending from the front end 25 of the nozzle 20 into an airless ball 40 .

繼而，CPU 61如圖5所示那樣執行球形接合步驟。如圖4所示那樣，CPU 61使瓷嘴20的中心線24的XY坐標與第一接合點P1的中心線36的XY坐標一致，如圖4、圖5所示的箭頭81那樣，使瓷嘴20的前端25朝向第一接合點P1下降到點a。此時，從焊盤35的上表面至瓷嘴20的前端25的高度h1、即，從焊盤35的上表面至點a的高度h1基於壓接球41的厚度hb（參照圖2）的目標值決定。以下，將此高度h1稱為“壓接高度h1”。Then, the CPU 61 executes the ball bonding step as shown in FIG. 5 . As shown in FIG. 4 , the CPU 61 aligns the XY coordinates of the center line 24 of the mouthpiece 20 with the XY coordinates of the center line 36 of the first joint point P1 , and makes the The front end 25 of the nozzle 20 descends to point a toward the first engagement point P1. At this time, the height h1 from the upper surface of the pad 35 to the tip 25 of the nozzle 20 , that is, the height h1 from the upper surface of the pad 35 to the point a is based on the thickness hb of the crimp ball 41 (see FIG. 2 ). target value. Hereinafter, this height h1 is referred to as "crimping height h1".

然後，如圖5所示那樣，利用瓷嘴20的面部23將無空氣球40按壓在焊盤35上。此時，也可經由超聲波喇叭15對瓷嘴20的前端25賦予超聲波振動。Then, as shown in FIG. 5 , the airless ball 40 is pressed against the pad 35 by the surface portion 23 of the nozzle 20 . At this time, ultrasonic vibration may be imparted to the tip 25 of the nozzle 20 via the ultrasonic horn 15 .

瓷嘴20將無空氣球40按壓在焊盤35上時，如之前參照圖2說明的那樣，面部23與倒角部22將無空氣球40成形為壓接球41及球頸42。當形成壓接球41及球頸42後，CPU 61結束球形接合步驟。When the nozzle 20 presses the airless ball 40 against the pad 35 , the surface portion 23 and the chamfered portion 22 shape the airless ball 40 into the crimped ball 41 and the ball neck 42 as described above with reference to FIG. 2 . After the crimp ball 41 and the ball neck 42 are formed, the CPU 61 ends the ball bonding step.

接著，CPU 61如圖6A～圖6D所示那樣執行薄壁部形成步驟。CPU 61預先打開夾持器17。然後，如圖6A所示那樣，CPU 61驅動Z方向馬達13，使瓷嘴20的前端25如圖4、圖6A中所示的箭頭82那樣，僅上升高度Δhb至點b，使瓷嘴20的前端25的高度成為高度h2。以下，將高度h2稱為“剪切高度h2”。剪切高度h2是壓接球41的上端面與球頸42的上端面之間的高度，且是瓷嘴20的前端25位於球頸42的側面的高度。Next, the CPU 61 executes the thin-walled portion forming step as shown in FIGS. 6A to 6D . The CPU 61 opens the gripper 17 in advance. Then, as shown in FIG. 6A , the CPU 61 drives the Z-direction motor 13 to raise the tip 25 of the nozzle 20 only by the height Δhb to the point b as indicated by the arrow 82 shown in FIGS. 4 and 6A , so that the nozzle 20 The height of the front end 25 becomes the height h2. Hereinafter, the height h2 will be referred to as "the clipping height h2". The shear height h2 is the height between the upper end surface of the crimping ball 41 and the upper end surface of the ball neck 42 , and is the height at which the front end 25 of the porcelain nozzle 20 is located on the side surface of the ball neck 42 .

接著，如圖6B所示，CPU 61在將瓷嘴20的前端25的高度保持在剪切高度h2的狀態下，驅動XY平臺11，如圖4、圖6B所示的箭頭83那樣，使瓷嘴20在朝向第二接合點P2的正向方向上水平移動距離Δxc至點c。由此，瓷嘴20的中心線24位於比第一接合點P1的中心線36更靠近第二接合點P2的位置。Next, as shown in FIG. 6B , the CPU 61 drives the XY stage 11 while maintaining the height of the tip 25 of the nozzle 20 at the shearing height h2, as shown by arrows 83 in FIGS. The nozzle 20 is moved horizontally by a distance Δxc to point c in the forward direction toward the second junction point P2. Thereby, the center line 24 of the mouthpiece 20 is located closer to the second junction point P2 than the center line 36 of the first junction point P1.

接著，如圖6C所示那樣，CPU 61在將瓷嘴20的前端25的高度保持在剪切高度h2的狀態下，與圖6B相反，驅動XY平臺11，如圖4、圖6C所示的箭頭84那樣，使瓷嘴20沿著從第二接合點P2朝向第一接合點P1的反向方向水平移動距離Δxd至點d。由於Δxd大於圖6B所示的Δxc，所以如圖6C所示那樣，瓷嘴20的中心線24位於比第一接合點P1更靠近反向側。Next, as shown in FIG. 6C , the CPU 61 drives the XY stage 11 contrary to FIG. 6B while maintaining the height of the front end 25 of the nozzle 20 at the shear height h2, as shown in FIGS. 4 and 6C . As indicated by the arrow 84, the mouthpiece 20 is moved horizontally by the distance Δxd to the point d in the reverse direction from the second junction point P2 to the first junction point P1. Since Δxd is larger than Δxc shown in FIG. 6B , as shown in FIG. 6C , the center line 24 of the mouthpiece 20 is located on the opposite side from the first joint point P1 .

進而，CPU 61在將瓷嘴20的前端25的高度保持在剪切高度h2的狀態下，驅動XY平臺11，如圖4、圖6D所示的箭頭85那樣，使瓷嘴20沿著朝向第二接合點P2的正向方向水平移動距離Δxe至點e。由於Δxe比圖6C所示的Δxd小，所以如圖6D所示那樣，瓷嘴20的中心線24位於比第一接合點P1更靠反向側、且穿過壓接球41的與第二接合點P2相反的一側（反向側）的端部45的位置。Furthermore, the CPU 61 drives the XY stage 11 while keeping the height of the tip 25 of the nozzle 20 at the shearing height h2, as indicated by the arrow 85 shown in FIGS. The forward direction of the two junction points P2 moves horizontally by a distance Δxe to point e. Since Δxe is smaller than Δxd shown in FIG. 6C , as shown in FIG. 6D , the center line 24 of the nozzle 20 is located on the opposite side of the first joint point P1 and passes through the crimp ball 41 and the second The position of the end portion 45 on the opposite side (reverse side) of the junction point P2.

如圖6B至圖6D所示那樣，將瓷嘴20的前端25的高度保持在剪切高度h2，使瓷嘴20的前端25在水平方向上朝向正向側及反向側往復移動時，如圖6C、圖6D所示那樣，球頸42的一部分在剪切高度h2處被瓷嘴20的前端25剪切斷裂而在水平方向上削掉。由此，形成正向側的剪切面44及反向側的剪切面43。此處，正向側的剪切面44出現在壓接球41的上端面附近。另外，反向側的剪切面43出現在球頸42的下端面附近。在剪切面43和壓接 球41的與第二接合點P2相反的一側（反向側）的端部45的上表面之間，空有微小的間隙。在正向側的剪切面44與反向側的剪切面43之間，形成連接球頸42與壓接球41之間的細的連接部46。連接部46是剖面面積比導線16減少的薄壁部。As shown in FIGS. 6B to 6D , when the height of the front end 25 of the nozzle 20 is maintained at the shear height h2 and the front end 25 of the nozzle 20 is reciprocated in the horizontal direction toward the forward side and the reverse side, as As shown in FIGS. 6C and 6D , a part of the ball neck 42 is sheared and fractured by the front end 25 of the nozzle 20 at the shear height h2 and is cut off in the horizontal direction. Thereby, the shearing surface 44 on the forward side and the shearing surface 43 on the reverse side are formed. Here, the shear surface 44 on the positive side appears in the vicinity of the upper end surface of the crimp ball 41 . In addition, the shear surface 43 on the opposite side appears in the vicinity of the lower end surface of the ball neck 42 . There is a slight gap between the shear surface 43 and the upper surface of the end portion 45 of the crimp ball 41 on the opposite side (opposite side) to the second engagement point P2. Between the shearing surface 44 on the forward side and the shearing surface 43 on the reverse side, a thin connecting portion 46 that connects the ball neck 42 and the crimp ball 41 is formed. The connection portion 46 is a thin-walled portion having a smaller cross-sectional area than the lead wire 16 .

如此，使瓷嘴20的前端25在水平方向上朝向正向側及反向側往復移動，形成剪切面43、剪切面44及連接部46時，可極力減小連接部46的剖面面積，並且可抑制連接部46的剖面面積大小的偏差。In this way, when the front end 25 of the mouthpiece 20 is reciprocated toward the forward side and the reverse side in the horizontal direction to form the shear surface 43 , the shear surface 44 and the connection portion 46 , the cross-sectional area of the connection portion 46 can be reduced as much as possible. , and the variation in the size of the cross-sectional area of the connecting portion 46 can be suppressed.

接著，如圖7A～圖7C所示那樣，CPU 61執行導線尾端彎曲步驟。CPU 61如圖7A所示那樣驅動Z方向馬達13，使瓷嘴20的前端25如圖4、圖7A中所示的箭頭86那樣上升到點f，使瓷嘴20的前端25的高度成為高度h3。以下，高度h3稱為“移動高度h3”。移動高度h3比剪切高度h2高。此時，球頸42與壓接球41之間通過連接部46連接，夾持器17打開，因此瓷嘴20上升後，導線尾端47從瓷嘴20的前端25抽出。Next, as shown in FIGS. 7A to 7C , the CPU 61 executes the wire tail end bending step. The CPU 61 drives the Z-direction motor 13 as shown in FIG. 7A to raise the front end 25 of the nozzle 20 to the point f as indicated by arrows 86 in FIGS. h3. Hereinafter, the height h3 is referred to as "movement height h3". The moving height h3 is higher than the clipping height h2. At this time, the ball neck 42 and the crimping ball 41 are connected by the connecting portion 46 , and the clamp 17 is opened. Therefore, after the ceramic nozzle 20 is raised, the wire tail 47 is pulled out from the front end 25 of the ceramic nozzle 20 .

使瓷嘴20的前端25上升到移動高度h3後，CPU 61使瓷嘴20的前端25如圖4、圖7B中所示的箭頭87那樣從點f呈圓弧狀地移動到點g。圓弧狀的移動也可沿著以圖7A所示的點e為中心、以點f與點e的距離為半徑的圓弧而移動到高度h4的點g。由此，導線尾端47從連接部46向正向側彎曲而下側的側面朝向壓接球41的上端面彎曲。After raising the front end 25 of the mouthpiece 20 to the moving height h3, the CPU 61 moves the front end 25 of the mouthpiece 20 in an arc shape from the point f to the point g as indicated by arrows 87 in FIGS. 4 and 7B . The arc-shaped movement may move to the point g of the height h4 along an arc whose center is the point e shown in FIG. 7A and whose radius is the distance between the point f and the point e. Thereby, the lead end 47 is bent toward the positive side from the connection portion 46 , and the lower side surface is bent toward the upper end surface of the crimp ball 41 .

接著，與圖7B相反，CPU 61使瓷嘴20的前端25如圖4、圖7C中所示的箭頭88那樣從點g圓弧狀地移動到點f，使瓷嘴20的前端25的位置返回到至f。由此，導線尾端47在從連接部46朝向正向側彎曲後，成為向反向側彎曲的形狀。Next, contrary to FIG. 7B , the CPU 61 moves the front end 25 of the nozzle 20 in an arc shape from the point g to the point f as indicated by the arrow 88 in FIGS. Return to f. As a result, the lead end 47 is bent toward the forward side from the connection portion 46 and then has a shape that is bent toward the reverse side.

接著，如圖8所示那樣，CPU 61執行導線尾端分離步驟。如圖4、圖8所示那樣，CPU 61關閉夾持器17，驅動XY平臺11及Z方向馬達13，使瓷嘴20的前端25朝向第二接合點P2的方向向斜上方移動至高度h5的點h。通過此移動，從瓷嘴20的前端25延伸出的導線尾端47以從連接部46朝向第二接合點P2的方向向斜上方延伸的方式變形。另外，移動時，由於CPU 61關閉夾持器17，因此通過移動，連接部46被瓷嘴20及夾持器17朝向第二接合點P2的方向而向斜上方拉伸。由此，如圖8所示那樣，連接部46斷裂，形成壓接球側斷裂面48及導線尾端側斷裂面49。在連接部46斷裂時，如圖8所示那樣，導線尾端47從瓷嘴20的前端25朝向第一接合點P1朝著反向側而向斜下方延伸，並繞到瓷嘴20的反向側的面部23的下側。Next, as shown in FIG. 8, the CPU 61 executes the wire tail separation step. As shown in FIGS. 4 and 8 , the CPU 61 closes the gripper 17 and drives the XY stage 11 and the Z-direction motor 13 to move the front end 25 of the nozzle 20 obliquely upward in the direction of the second joint point P2 to a height h5 the point h. By this movement, the lead wire tail end 47 extending from the front end 25 of the mouthpiece 20 is deformed so as to extend obliquely upward from the connecting portion 46 in the direction toward the second junction point P2. In addition, since the CPU 61 closes the gripper 17 during the movement, the connection portion 46 is pulled obliquely upward by the mouthpiece 20 and the gripper 17 in the direction of the second joint point P2 by the movement. Thereby, as shown in FIG. 8, the connection part 46 is fractured, and the fracture surface 48 on the side of the crimping ball and the fracture surface 49 on the lead end side are formed. When the connection portion 46 is broken, as shown in FIG. 8 , the lead end 47 extends obliquely downward from the front end 25 of the mouthpiece 20 toward the opposite side toward the first joint point P1 , and wraps around the opposite side of the mouthpiece 20 . The underside of the face 23 to the side.

接著，CPU 61如圖9A、圖9B所示那樣執行導線尾端接合步驟。如圖4的箭頭90所示那樣，CPU 61驅動XY平臺11及Z方向馬達13，使瓷嘴20的前端25從點h上升到點i後，從點i朝向反向方向移動。然後，如圖9A所示那樣，使瓷嘴20的前端25的位置移動到高度h6的點j，以使瓷嘴20的第一接合點側（反向側）的面部23位於壓接球41的反向側的端部45的上方。Next, the CPU 61 executes the wire tail bonding step as shown in FIGS. 9A and 9B . As shown by arrow 90 in FIG. 4 , the CPU 61 drives the XY stage 11 and the Z-direction motor 13 to raise the tip 25 of the nozzle 20 from the point h to the point i, and then moves from the point i to the reverse direction. Then, as shown in FIG. 9A , the position of the front end 25 of the mouthpiece 20 is moved to the point j of the height h6 so that the surface portion 23 of the mouthpiece 20 on the side of the first joining point (opposite side) is positioned on the crimp ball 41 above the end 45 on the opposite side.

接著，CPU 61如圖4、圖9B所示的箭頭91那樣，使瓷嘴20的反向側的面部23朝向壓接球41的反向側的端部45下降至點k。然後，如圖9B所示那樣，利用瓷嘴20的反向側的面部23將從瓷嘴20的前端25朝向反向側而向斜下方延伸的導線尾端47的側面按壓在壓接球41的反向側的端部45上。由此，導線尾端47接合在端部45上，形成第一接合部50。此時，從焊盤35的上表面到瓷嘴20的前端25的高度h7、即，從焊盤35的上表面到點k的高度h7基於第一接合部50的厚度的目標值決定。Next, the CPU 61 lowers the surface portion 23 on the opposite side of the mouthpiece 20 toward the end portion 45 on the opposite side of the crimp ball 41 to the point k, as indicated by arrows 91 in FIGS. 4 and 9B . Then, as shown in FIG. 9B , the side surface of the wire tail 47 extending obliquely downward from the front end 25 of the mouthpiece 20 toward the opposite side is pressed against the crimp ball 41 by the surface portion 23 on the opposite side of the mouthpiece 20 . end 45 on the opposite side. Thus, the wire tail 47 is joined to the end portion 45 to form the first joining portion 50 . At this time, the height h7 from the upper surface of the pad 35 to the tip 25 of the nozzle 20 , that is, the height h7 from the upper surface of the pad 35 to the point k is determined based on the target value of the thickness of the first bonding portion 50 .

如圖9B所示那樣，第一接合部50接合在壓接球41的反向側的端部45上，第二接合點P2的一側沿著壓接球41上的剪切面44在水平方向上朝向第二接合點P2延伸。As shown in FIG. 9B , the first engagement portion 50 is engaged with the end portion 45 on the opposite side of the crimp ball 41 , and the side of the second engagement point P2 is horizontal along the shear surface 44 on the crimp ball 41 . The direction extends toward the second junction point P2.

接著，CPU 61執行針腳接合步驟。CPU 61打開夾持器17，如圖4所示的箭頭92那樣，使瓷嘴20上升，使環形導線52從瓷嘴20的前端25延伸出後，如圖4所示的點劃線的箭頭93所示那樣，使瓷嘴20的前端25環形化，而使瓷嘴20的中心線24的位置對準第二接合點P2的中心線37（參照圖3）的位置。然後，將瓷嘴20的前端25按壓在基板30的引線31上，而將環形導線52的側面針腳接合在引線31上，形成第二接合部51。Next, the CPU 61 executes the stitch bonding step. The CPU 61 opens the gripper 17, raises the nozzle 20 as shown by the arrow 92 in FIG. As shown in 93, the front end 25 of the mouthpiece 20 is annular, and the position of the centerline 24 of the mouthpiece 20 is aligned with the position of the centerline 37 (refer to FIG. 3) of the second joint point P2. Then, the front end 25 of the ceramic nozzle 20 is pressed against the lead wire 31 of the substrate 30 , and the side surface of the ring wire 52 is stitch-bonded to the lead wire 31 to form the second bonding portion 51 .

由此，如圖3、圖10所示那樣，環形導線52成為從接合在壓接球41的反向側的端部45上的第一接合部50越過壓接球41的剪切面44之上而朝向第二接合點P2在水平方向上延伸的形狀。As a result, as shown in FIGS. 3 and 10 , the ring-shaped lead wire 52 is formed between the first joint portion 50 joined to the end portion 45 on the opposite side of the crimp ball 41 and over the shear surface 44 of the crimp ball 41 . A shape extending in the horizontal direction toward the second junction point P2.

再者，在圖4中，簡化記載了瓷嘴20的前端25的環形化的軌跡，但根據要形成的環形導線52的形狀，也可以設為各種路徑。In addition, in FIG. 4, although the locus of the circularization of the front-end|tip 25 of the mouthpiece 20 is simplified and described, various paths may be used according to the shape of the looped wire 52 to be formed.

然後，CPU 61關閉夾持器17，使瓷嘴20上升，切斷導線16。如此，打線接合裝置100通過第一接合部50、環形導線52、及第二接合部51連接如圖3所示的第一接合點P1、及第二接合點P2。Then, the CPU 61 closes the gripper 17 , lifts the nozzle 20 , and cuts the lead wire 16 . In this way, the wire bonding apparatus 100 is connected to the first bonding point P1 and the second bonding point P2 as shown in FIG. 3 through the first bonding portion 50 , the annular wire 52 , and the second bonding portion 51 .

如以上所說明那樣，實施方式的打線接合裝置100通過薄壁部形成步驟而減小球頸42與壓接球41的連接部46的剖面面積後，使導線尾端47彎曲變形，使瓷嘴20朝向第二接合點P2移動而將導線尾端47從壓接球41切斷，所以可保持切斷的導線尾端47進入瓷嘴20的反向側的面部23的下側的狀態。因此，在使導線尾端47的側面接合在壓接球41上而形成第一接合部50時，第一接合部50的第二接合點側可沿著壓接球41之上在水平方向上朝向第二接合點P2延伸。因此，如圖3、圖10所示那樣，可將環形導線52形成為從壓接球41上水平地朝向第二接合點P2，而能夠降低環形導線52的高度。As described above, in the wire bonding apparatus 100 of the embodiment, the cross-sectional area of the connection portion 46 between the ball neck 42 and the crimp ball 41 is reduced by the thin-walled portion forming step, and then the wire tail end 47 is bent and deformed to make the nozzle 20 moves toward the second junction point P2 to cut the lead end 47 from the crimp ball 41 , so that the cut lead end 47 enters the lower side of the surface portion 23 on the opposite side of the nozzle 20 . Therefore, when the first joint portion 50 is formed by engaging the side surface of the wire tail end 47 on the crimp ball 41 , the second joint point side of the first joint portion 50 can be horizontally along the crimp ball 41 . Extends toward the second junction point P2. Therefore, as shown in FIGS. 3 and 10 , the ring-shaped wire 52 can be formed horizontally from the crimp ball 41 toward the second bonding point P2, and the height of the ring-shaped wire 52 can be reduced.

另外，如專利文獻2所記載的現有技術那樣，即使不將導線尾端47的側面多次按壓在壓接球41上，也可使第一接合部50的第二接合點側沿著壓接球41之上在水平方向上朝向第二接合點P2延伸。因此，能夠使第一接合部50與環形導線52的連接部分的剖面面積比現有技術大，所以在針腳接合步驟中，能夠使瓷嘴20的前端25自由地移動，能夠增大環形導線52的形狀的自由度。In addition, as in the prior art described in Patent Document 2, even without pressing the side surface of the wire tail end 47 against the crimp ball 41 many times, the second joint point side of the first joint portion 50 can be crimped along the Above the ball 41 extends in the horizontal direction toward the second junction point P2. Therefore, the cross-sectional area of the connecting portion between the first joint portion 50 and the ring wire 52 can be made larger than that in the prior art, so that the front end 25 of the mouthpiece 20 can be freely moved in the stitch bonding step, and the diameter of the ring wire 52 can be increased. freedom of shape.

另外，在實施方式的打線接合裝置100中，在薄壁部形成步驟中，使瓷嘴20的前端25在水平方向上朝向正向側及反向側往復移動而極力減小連接部46的剖面面積，並且抑制連接部46的剖面面積大小的偏差。因此，在導線尾端分離步驟中，導線尾端47與連接部46的斷裂載荷小且恒定，因此在連接部46斷裂時進入瓷嘴20的反向側的面部23的下側的導線尾端47的形狀為無偏差、穩定的形狀。由此，形成在壓接球41的反向側的端部45上的第一接合部50的形狀恒定，能夠進行穩定的打線接合。In addition, in the wire bonding apparatus 100 of the embodiment, in the thin-walled portion forming step, the front end 25 of the nozzle 20 is reciprocated in the horizontal direction toward the forward side and the reverse side to minimize the cross-section of the connecting portion 46 area, and the variation in the size of the cross-sectional area of the connection portion 46 is suppressed. Therefore, in the wire tail separation step, the breaking load between the wire tail 47 and the connecting portion 46 is small and constant, so that the wire tail enters the lower side of the surface portion 23 on the opposite side of the mouthpiece 20 when the connecting portion 46 is broken The shape of 47 is a stable shape without deviation. Thereby, the shape of the first joint portion 50 formed on the end portion 45 on the opposite side of the crimp ball 41 is constant, and stable wire bonding can be performed.

進而，在實施方式的打線接合裝置100中，在導線尾端分離步驟中，使瓷嘴20的前端25朝向第二接合點P2的方向向斜上方移動，因此可抑制切斷的導線尾端47與壓接球41接觸而再次接合，可提高打線接合的穩定性。Furthermore, in the wire bonding apparatus 100 of the embodiment, in the wire tail separation step, the tip 25 of the nozzle 20 is moved obliquely upward in the direction of the second bonding point P2, so that the cut wire tail 47 can be suppressed. By contacting with the crimp ball 41 and re-bonding, the stability of the wire bonding can be improved.

再者，也可通過進一步減小連接部46的剖面面積，進一步減小導線尾端47與連接部46的斷裂載荷，通過使瓷嘴20在水平方向上移動，進行導線尾端47的切斷。Furthermore, by further reducing the cross-sectional area of the connecting portion 46, the breaking load of the wire tail end 47 and the connecting portion 46 can be further reduced, and the wire tail end 47 can be cut by moving the porcelain nozzle 20 in the horizontal direction. .

10:底座 11:XY平臺 11a:移動機構 12:接合頭 13:Z方向馬達 13a:軸 13b:定子 14:接合臂 14a:根部 15:超聲波喇叭 16:導線 17:夾持器 18:放電電極 19:接合載台 20:瓷嘴 21:貫通孔 22:倒角部 23:面部 24、36、37:中心線 25:前端 30:基板 31:引線 34:半導體晶片 35:焊盤 40:無空氣球 41:壓接球 42:球頸 42a:圓錐狀部 42b:圓柱狀部 43、44:剪切面 45:端部 46:連接部 47:導線尾端 48:壓接球側斷裂面 49:導線尾端側斷裂面 50:第一接合部 51:第二接合部 52:環形導線 60:控制部 61:CPU 62:存儲器 71、72、81~93:箭頭 100:打線接合裝置 a~k:點 d1:內徑 d2:外徑 d3:倒角直徑 d4:外周直徑 d5:直徑 F:正向方向 h1~h7、Δhb:高度 hb:厚度 P1:第一接合點 P2:第二接合點 R:反向方向 W:面部寬度 Δxc、Δxd、Δxe:距離 10: Base 11: XY stage 11a: Moving Mechanisms 12: Splice head 13: Z direction motor 13a: Shaft 13b: Stator 14: Engagement Arm 14a: roots 15: Ultrasonic Horn 16: Wire 17: Gripper 18: Discharge electrode 19: Engage the stage 20: Porcelain Mouth 21: Through hole 22: Chamfered part 23: Facial 24, 36, 37: Centerline 25: Front end 30: Substrate 31: Leads 34: Semiconductor wafer 35: Pad 40: Airless Balloon 41: Crimp Ball 42: Ball neck 42a: conical part 42b: Cylindrical part 43, 44: Cut plane 45: End 46: Connection part 47: wire tail 48: Crimping ball side fracture surface 49: Fracture surface of wire tail side 50: First joint 51: Second joint 52: Ring wire 60: Control Department 61:CPU 62: memory 71, 72, 81~93: Arrow 100: wire bonding device a~k: point d1: inner diameter d2: outer diameter d3: Chamfer diameter d4: outer diameter d5: diameter F: positive direction h1~h7, Δhb: height hb: thickness P1: First junction P2: Second junction R: reverse direction W: face width Δxc, Δxd, Δxe: distance

圖1是表示實施方式的打線接合裝置的結構的立面圖。 圖2是安裝在實施方式的打線接合裝置的瓷嘴的剖面圖。 圖3是表示利用實施方式的打線接合裝置形成的環形導線的立面圖。 圖4是表示瓷嘴的前端的移動的說明圖。 圖5是表示使用實施方式的打線接合裝置進行打線接合時的球形接合步驟的說明圖。 圖6A是表示在使用實施方式的打線接合裝置進行打線接合時的薄壁部形成步驟中使瓷嘴略微上升的狀態的說明圖。 圖6B是表示在薄壁部形成步驟中，從圖6A所示的狀態使瓷嘴朝向正向方向水平移動的狀態的說明圖。 圖6C是表示在薄壁部形成步驟中，從圖6B所示的狀態使瓷嘴朝向反向方向水平移動的狀態的說明圖。 圖6D是表示在薄壁部形成步驟中，從圖6C所示的狀態使瓷嘴再次朝向正向方向水平移動少許的狀態的說明圖。 圖7A是表示在使用實施方式的打線接合裝置進行打線接合時的導線尾端彎曲步驟中，使瓷嘴上升而使導線尾端延伸出的狀態的說明圖。 圖7B是表示在導線尾端彎曲步驟中，從圖7A所示的狀態使瓷嘴朝向第二接合點呈圓弧狀地移動的狀態的說明圖。 圖7C是表示在導線尾端彎曲步驟中，從圖7B所示的狀態使瓷嘴的前端朝向第一接合點的方向呈圓弧狀地移動的狀態的說明圖。 圖8是表示使用實施方式的打線接合裝置進行打線接合時的導線尾端分離步驟的說明圖。 圖9A是表示在使用實施方式的打線接合裝置進行打線接合時的導線尾端接合步驟中使瓷嘴移動到壓接球上方的狀態的說明圖。 圖9B是表示在導線尾端接合步驟中，從圖9A所示的狀態使瓷嘴下降而將導線尾端的側面接合在壓接球上的狀態的說明圖。 圖10是表示使用實施方式的打線接合裝置將環形導線針腳式接合（stitch bonding）在第二接合點的狀態下的第一接合部與環形導線的說明圖。 FIG. 1 is an elevation view showing the structure of a wire bonding apparatus according to an embodiment. 2 is a cross-sectional view of a nozzle attached to the wire bonding apparatus of the embodiment. FIG. 3 is an elevation view showing a ring-shaped wire formed by the wire bonding apparatus of the embodiment. FIG. 4 is an explanatory view showing the movement of the tip of the mouthpiece. 5 is an explanatory diagram showing a ball bonding step when wire bonding is performed using the wire bonding apparatus of the embodiment. 6A is an explanatory view showing a state in which the nozzle is slightly raised in the thin-walled portion forming step when wire bonding is performed using the wire bonding apparatus of the embodiment. 6B is an explanatory view showing a state in which the nozzle is moved horizontally in the forward direction from the state shown in FIG. 6A in the thin-walled portion forming step. 6C is an explanatory view showing a state in which the nozzle is horizontally moved in the reverse direction from the state shown in FIG. 6B in the thin-walled portion forming step. 6D is an explanatory view showing a state in which the nozzle is moved horizontally a little in the forward direction again from the state shown in FIG. 6C in the thin-walled portion forming step. 7A is an explanatory view showing a state in which the nozzle is raised to extend the lead end in the wire end bending step when the wire bonding apparatus according to the embodiment is used for wire bonding. 7B is an explanatory view showing a state in which the nozzle is moved in an arc shape toward the second junction point from the state shown in FIG. 7A in the wire tail end bending step. FIG. 7C is an explanatory view showing a state in which the tip of the mouthpiece is moved in an arc shape in the direction of the first joining point from the state shown in FIG. 7B in the lead end bending step. FIG. 8 is an explanatory view showing a wire tail separation step when wire bonding is performed using the wire bonding apparatus of the embodiment. 9A is an explanatory view showing a state in which the nipple is moved above the crimping ball in the wire tail bonding step when the wire bonding apparatus according to the embodiment is used. 9B is an explanatory view showing a state in which the nozzle is lowered from the state shown in FIG. 9A to join the side surface of the wire tail to the crimp ball in the wire tail bonding step. 10 is an explanatory diagram showing a first bonding portion and a ring wire in a state where the ring wire is stitch-bonded to a second bonding point using the wire bonding apparatus of the embodiment.

36:中心線 36: Centerline

81~93:箭頭 81~93: Arrow

a~k:點 a~k: point

F:正向方向 F: positive direction

h1~h7:高度 h1~h7: height

P1:第一接合點 P1: First junction

P2:第二接合點 P2: Second junction

R:反向方向 R: reverse direction

Claims (7)

一種半導體裝置的製造方法，是利用導線將第一接合點與第二接合點之間連接的半導體裝置的製造方法，且其特徵在於包括： 準備步驟，準備打線接合裝置，所述打線接合裝置包括供所述導線插通的瓷嘴、及使所述瓷嘴移動的移動機構； 球形接合步驟，在插通於所述瓷嘴的所述導線的前端形成無空氣球後，使所述瓷嘴的前端下降至壓接高度，將所述無空氣球與所述第一接合點接合而形成壓接球與所述壓接球上側的球頸； 薄壁部形成步驟，使所述瓷嘴的前端在水平方向上移動，在所述球頸與所述壓接球之間形成減小了剖面面積的薄壁部； 導線尾端彎曲步驟，在形成所述薄壁部之後，使所述瓷嘴向所述第二接合點的方向呈圓弧狀地往復移動而使所述導線彎曲變形； 導線尾端分離步驟，使所述瓷嘴上升而抽出導線尾端後，使所述瓷嘴向所述第二接合點的方向移動，在所述薄壁部將所述導線尾端與所述壓接球分離；以及 導線尾端接合步驟，使所述瓷嘴下降而將已分離的所述導線尾端的側面接合在所述壓接球上。 A method of manufacturing a semiconductor device is a method of manufacturing a semiconductor device using a wire to connect a first junction point and a second junction point, and is characterized by comprising: The preparation step is to prepare a wire bonding device, and the wire bonding device includes a ceramic nozzle for inserting the wire and a moving mechanism for moving the ceramic nozzle; In the ball bonding step, after the front end of the wire inserted into the porcelain nozzle forms an airless ball, the front end of the porcelain nozzle is lowered to the crimping height, and the airless ball is connected to the first joint point. Joining to form a crimp ball and a ball neck on the upper side of the crimp ball; The thin-walled portion forming step is to move the front end of the porcelain mouth in the horizontal direction to form a thin-walled portion with a reduced cross-sectional area between the ball neck and the crimping ball; In the step of bending the tail end of the wire, after the thin-walled portion is formed, the porcelain nozzle is moved back and forth in an arc shape in the direction of the second joint point to bend and deform the wire; In the step of separating the end of the wire, after the ceramic nozzle is raised and the end of the wire is pulled out, the ceramic nozzle is moved in the direction of the second joint point, and the end of the wire is separated from the end of the wire at the thin-walled part. crimp ball separation; and In the wire tail end joining step, the porcelain nozzle is lowered to join the side surface of the separated wire tail end on the crimping ball. 如請求項1所述的半導體裝置的製造方法，其中， 所述薄壁部形成步驟中，使所述瓷嘴上升到比所述壓接高度高的剪切高度並使所述瓷嘴在水平方向上移動。 The method for manufacturing a semiconductor device according to claim 1, wherein, In the thin-walled portion forming step, the nipple is raised to a shear height higher than the crimping height, and the nipple is moved in the horizontal direction. 如請求項1或2所述的半導體裝置的製造方法，其中， 所述薄壁部形成步驟中，在形成所述薄壁部時使所述瓷嘴在水平方向上往復動作。 The method for manufacturing a semiconductor device according to claim 1 or 2, wherein, In the thin-walled portion forming step, when the thin-walled portion is formed, the mouthpiece is caused to reciprocate in the horizontal direction. 如請求項1或2所述的半導體裝置的製造方法，其中， 所述導線尾端分離步驟中，當在所述薄壁部將所述導線尾端從所述壓接球分離時， 使所述瓷嘴朝向所述第二接合點的方向而向斜上方移動。 The method for manufacturing a semiconductor device according to claim 1 or 2, wherein, In the wire tail end separation step, when the wire tail end is separated from the crimp ball at the thin-walled portion, The mouthpiece is moved obliquely upward toward the direction of the second joint point. 如請求項1或2所述的半導體裝置的製造方法，其中， 所述導線尾端接合步驟中，當將所述導線尾端的側面接合在所述壓接球上時，使所述瓷嘴的所述第一接合點側的面部移動到所述壓接球的與所述第二接合點相反一側的端部上方之後，使所述瓷嘴下降，利用所述瓷嘴的所述面部將已彎曲變形的所述導線尾端的側面接合在所述壓接球的與所述第二接合點相反一側的所述端部上。 The method for manufacturing a semiconductor device according to claim 1 or 2, wherein, In the wire tail end joining step, when the side surface of the wire tail end is joined to the crimping ball, the surface of the porcelain nozzle on the side of the first joint point is moved to the surface of the crimping ball. After being above the end on the opposite side of the second joint point, the porcelain mouthpiece is lowered, and the side surface of the bent and deformed wire tail end is joined to the crimping ball by the surface of the porcelain mouthpiece. on the end on the opposite side of the second junction. 一種打線接合裝置，利用導線將第一接合點與第二接合點之間連接，且所述打線接合裝置的特徵在於包括： 瓷嘴，供所述導線插通； 移動機構，使所述瓷嘴移動；以及 控制部，控制所述移動機構的驅動，且 所述控制部是 在插通於所述瓷嘴的所述導線的前端形成無空氣球後，使所述瓷嘴的前端下降到壓接高度，將所述無空氣球與所述第一接合點接合而形成壓接球與所述壓接球上側的球頸， 使所述瓷嘴的前端在水平方向上移動，在所述球頸與所述壓接球之間形成減小了剖面面積的薄壁部， 在形成所述薄壁部之後，使所述瓷嘴向所述第二接合點的方向呈圓弧狀地往復移動而使所述導線彎曲變形， 在使所述瓷嘴上升而抽出導線尾端後，使所述瓷嘴向所述第二接合點的方向移動，在所述薄壁部將所述導線尾端與所述壓接球分離， 使所述瓷嘴下降而將已分離的所述導線尾端的側面接合在所述壓接球上。 A wire bonding device, using a wire to connect a first bonding point and a second bonding point, and the wire bonding device is characterized by comprising: a porcelain mouth, for the wire to be inserted through; a moving mechanism to move the mouthpiece; and a control unit that controls the driving of the moving mechanism, and The control part is After forming an airless ball at the front end of the wire inserted through the ceramic nozzle, the front end of the ceramic nozzle is lowered to a crimping height, and the airless ball is joined to the first joint to form a pressure Catch the ball with the crimp ball on the upper side of the ball neck, The front end of the mouthpiece is moved in the horizontal direction to form a thin-walled portion with a reduced cross-sectional area between the ball neck and the crimping ball, After the thin-walled portion is formed, the nozzle is moved back and forth in an arc shape in the direction of the second joint to bend and deform the lead wire. After the nozzle is raised to draw out the end of the wire, the nozzle is moved in the direction of the second joint, and the end of the wire is separated from the crimping ball at the thin-walled portion. The nipple is lowered to engage the side of the detached wire tail on the crimp ball. 如請求項6所述的打線接合裝置，其中， 所述控制部是 在形成所述薄壁部時，使所述瓷嘴上升到比所述壓接高度高的剪切高度，使所述瓷嘴在水平方向上往復移動， 在所述薄壁部將所述導線尾端從所述壓接球分離時，使所述瓷嘴朝向所述第二接合點的方向向斜上方移動， 當將所述導線尾端的側面接合在所述壓接球上時，使所述瓷嘴的所述第一接合點側的面部移動到所述壓接球的與所述第二接合點相反一側的端部上方之後，使所述瓷嘴下降而利用所述瓷嘴的所述面部將彎曲變形的所述導線尾端的側面接合在所述壓接球的與所述第二接合點相反一側的所述端部上。 The wire bonding device of claim 6, wherein, The control part is When forming the thin-walled portion, the nipple is raised to a shear height higher than the crimping height, and the nipple is moved back and forth in the horizontal direction, When the thin-walled portion separates the wire tail end from the crimping ball, the porcelain nozzle is moved obliquely upward in the direction toward the second joint point, When the side surface of the wire tail end is engaged on the crimping ball, the surface of the porcelain mouthpiece on the side of the first engaging point is moved to the opposite side of the second engaging point of the crimping ball. After the upper end of the side, the porcelain nozzle is lowered, and the side surface of the bent and deformed wire tail end is joined to the opposite side of the second joint point of the crimping ball by the surface of the porcelain mouth. on the end of the side.
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