TW202210645A - Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask - Google Patents

Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask Download PDF

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TW202210645A
TW202210645A TW110125816A TW110125816A TW202210645A TW 202210645 A TW202210645 A TW 202210645A TW 110125816 A TW110125816 A TW 110125816A TW 110125816 A TW110125816 A TW 110125816A TW 202210645 A TW202210645 A TW 202210645A
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vapor deposition
short side
deposition mask
hole
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TWI821707B (en
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松隈香織
樋口宏和
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日商凸版印刷股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B26HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26DCUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/18Means for removing cut-out material or waste
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Provided is a vapor deposition mask intermediate formed from a metal sheet, said vapor deposition mask intermediate comprising: a belt-like part that includes a border having first and second long sides and first and second short sides and a mask part provided with a plurality of mask holes; a frame-like part that surrounds the belt-like part; and a connecting part that is positioned between the belt-like part and the frame-like part and that connects at least the first short side of the belt-like part to the frame-like part. The belt-like part is provided with a fragile line, a line segment, and a cutout region. Both ends of the fragile line are connected to the first short side, and the fragile line has a line shape having a shape protruding from the first short side toward the second short side. The line segment is the part of the first short side that is sandwiched between both ends of the fragile line. The cutout region is surrounded by the fragile line and includes the line segment and the fragile line. The cutout region of the vapor deposition mask intermediate is provided with a through hole that is connected to part of the border surrounding the cutout region.

Description

蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法Evaporation mask intermediate, evaporation mask and manufacturing method of evaporation mask

本發明係關於一種蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法。The present invention relates to an evaporation mask intermediate body, an evaporation mask and a manufacturing method of the evaporation mask.

為了形成有機EL裝置具有之顯示元件,採用真空蒸鍍。於真空蒸鍍中,為了形成具有顯示元件所需之既定形狀的層而使用蒸鍍遮罩。蒸鍍遮罩具有藉由金屬製片材形成的帶狀。蒸鍍遮罩具有一對短邊,於使用蒸鍍遮罩之前,各短邊具有缺口,該缺口具有朝另一短邊凹陷之形狀。於使用蒸鍍遮罩時,蒸鍍遮罩係於將各短邊朝遠離與該短邊不同之短邊的方向拉伸的狀態下被安裝於遮罩框架(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻]In order to form a display element included in an organic EL device, vacuum deposition is used. In vacuum evaporation, an evaporation mask is used to form a layer having a predetermined shape required for a display element. The vapor deposition mask has a belt shape formed of a metal sheet. The vapor deposition mask has a pair of short sides. Before the vapor deposition mask is used, each short side has a notch, and the notch has a shape recessed toward the other short side. When a vapor deposition mask is used, the vapor deposition mask is attached to a mask frame in a state where each short side is stretched in a direction away from a short side different from the short side (for example, see Patent Document 1). [Prior Art Literature] [Patent Literature]

[專利文獻1]國際公開第2020/050398號[Patent Document 1] International Publication No. 2020/050398

[發明欲解決之課題][The problem to be solved by the invention]

然而,蒸鍍遮罩係藉由對金屬製片材進行濕式蝕刻而形成。此時,於用以製造蒸鍍遮罩之金屬製的片材中,在與蒸鍍遮罩之缺口對應的部分形成有貫通孔。與缺口對應之貫通孔係較形成於蒸鍍遮罩上之其他貫通孔的面積大。因此,由於金屬製片材中與缺口對應的部分接觸更多的蝕刻液,因此蝕刻液容易於金屬製片材與形成於片材上之阻劑遮罩之間產生環繞、或者蝕刻處理容易受蝕刻液之流速左右。其結果,在與蒸鍍遮罩之缺口對應的部分中,圖案化之形狀的精度容易降低。However, vapor deposition masks are formed by wet etching a metal sheet. At this time, in the metal sheet for manufacturing the vapor deposition mask, a through hole is formed in a portion corresponding to the notch of the vapor deposition mask. The area of the through hole corresponding to the notch is larger than that of the other through holes formed on the vapor deposition mask. Therefore, since the portion of the metal sheet corresponding to the notch is in contact with more etching solution, the etching solution is likely to be surrounded between the metal sheet and the resist mask formed on the sheet, or the etching process is easily affected. The flow rate of the etching solution is about. As a result, in the portion corresponding to the notch of the vapor deposition mask, the accuracy of the patterned shape tends to decrease.

本發明之目的,在於提供一種可提高圖案加工之形狀的精度之蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法。 [用以解決課題之手段]An object of the present invention is to provide a vapor deposition mask intermediate body, a vapor deposition mask, and a manufacturing method of the vapor deposition mask that can improve the accuracy of the shape of pattern processing. [means to solve the problem]

於本發明之一態樣中,提供一種蒸鍍遮罩中間體。蒸鍍遮罩中間體係由金屬製片材形成。其具備:帶狀部,其包含具有第一、第二長邊及第一、第二短邊之邊緣、及具有複數個遮罩孔之遮罩部;框狀部,其圍繞前述帶狀部;及連結部,其位於前述帶狀部與前述框狀部之間,且將前述帶狀部中的至少前述短邊連結於前述框狀部。前述帶狀部具備脆弱線、線段及切除區域。前述脆弱線之兩端連接於前述第一短邊,前述脆弱線具有自前述第一短邊朝向前述第二短邊的突狀。前述線段係被夾持於前述第一短邊中之前述脆弱線兩端的部分。前述切除區域係藉由前述線段及前述脆弱線包圍,且包含前述線段及前述脆弱線。前述蒸鍍遮罩中間體係於前述切除區域內具有貫通孔,該貫通孔連接於圍繞前述切除區域之邊緣的一部分。In one aspect of the present invention, an evaporation mask intermediate is provided. The vapor deposition mask intermediate system is formed from sheet metal. It has: a belt-shaped part, which includes edges with first and second long sides and first and second short sides, and a mask part with a plurality of mask holes; a frame-shaped part, which surrounds the belt-shaped part and a connecting portion, which is located between the strip-shaped portion and the frame-shaped portion, and connects at least the short sides of the strip-shaped portion to the frame-shaped portion. The band-shaped portion includes a line of weakness, a line segment, and a cut-out region. Both ends of the line of weakness are connected to the first short side, and the line of weakness has a protruding shape from the first short side toward the second short side. The line segment is sandwiched between the two ends of the line of weakness in the first short side. The cutout area is surrounded by the line segment and the line of weakness, and includes the line segment and the line of weakness. The vapor deposition mask intermediate system has a through hole in the cutout area, and the through hole is connected to a part of the edge surrounding the cutout area.

於本發明之另一態樣中,提供一種蒸鍍遮罩。蒸鍍遮罩具有帶狀。蒸鍍遮罩具備:邊緣,其具有一對長邊及一對短邊;及遮罩部,其具有複數個遮罩孔。各短邊包含缺口,該缺口具有朝另一前述短邊凹陷的U字形。前述缺口係於前述U字之彎曲部即底部的至少一部分具有切斷痕。In another aspect of the present invention, an evaporation mask is provided. The vapor deposition mask has a strip shape. The vapor deposition mask includes an edge having a pair of long sides and a pair of short sides, and a mask portion having a plurality of mask holes. Each of the short sides includes a notch, and the notch has a U-shape recessed toward the other short side. The said notch has a cutting mark in at least a part of the bottom part which is the bent part of the said U-shape.

於本發明之另一態樣中,提供一種蒸鍍遮罩的製造方法。蒸鍍遮罩的製造方法係具備:自金屬製片材形成蒸鍍遮罩中間體,其中,該蒸鍍遮罩中間體具有帶狀部、框狀部及連結部,該帶狀部包含具有第一、第二長邊及第一、第二短邊之邊緣、及具有複數個遮罩孔之遮罩部,該框狀部係圍繞前述帶狀部,該連結部係位於前述帶狀部與前述框狀部之間,且將前述帶狀部中的至少前述短邊連結於前述框狀部;及自前述帶狀部形成蒸鍍遮罩。前述帶狀部具備脆弱線、線段及切除區域。前述脆弱部之兩端連接於前述第一短邊,且具有自前述第一短邊朝向前述第二短邊的突狀。前述線段係被夾持於前述第一短邊中之前述脆弱線兩端的部分。前述切除區域係藉由前述線段及前述脆弱線包圍,且包含前述線段及前述脆弱線。前述蒸鍍遮罩中間體係於前述切除區域內具有貫通孔,該貫通孔連接於圍繞前述切除區域之邊緣的一部分。In another aspect of the present invention, a method for manufacturing an evaporation mask is provided. The manufacturing method of a vapor deposition mask includes: forming a vapor deposition mask intermediate body from a metal sheet, wherein the vapor deposition mask intermediate body has a belt-shaped part, a frame-shaped part, and a connecting part, and the belt-shaped part includes a Edges of the first and second long sides and the first and second short sides, and a shielding portion having a plurality of shielding holes, the frame-shaped portion surrounds the belt-shaped portion, and the connecting portion is located on the belt-shaped portion Between the frame-shaped part and the strip-shaped part, at least the short side of the strip-shaped part is connected to the frame-shaped part; and a vapor deposition mask is formed from the strip-shaped part. The band-shaped portion includes a line of weakness, a line segment, and a cut-out region. Both ends of the fragile portion are connected to the first short side, and have a protruding shape from the first short side toward the second short side. The line segment is sandwiched between the two ends of the line of weakness in the first short side. The cutout area is surrounded by the line segment and the line of weakness, and includes the line segment and the line of weakness. The vapor deposition mask intermediate system has a through hole in the cutout area, and the through hole is connected to a part of the edge surrounding the cutout area.

[用以實施發明的形態][Form for carrying out the invention]

參照圖1至圖6,對蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法之一實施形態進行說明。以下,依序對蒸鍍遮罩中間體、遮罩裝置及蒸鍍遮罩的製造方法進行說明。1 to 6 , one embodiment of a vapor deposition mask intermediate body, a vapor deposition mask, and a method for manufacturing the vapor deposition mask will be described. Hereinafter, the vapor deposition mask intermediate body, the mask device, and the manufacturing method of the vapor deposition mask will be sequentially described.

[蒸鍍遮罩中間體] 參照圖1至圖3,對蒸鍍遮罩中間體進行說明。 圖1所示之蒸鍍遮罩中間體10係由金屬製的片材形成。金屬片,例如由鐵鎳系合金或鐵鎳鈷系合金形成。鐵鎳系合金,例如為含有30質量%以上之鎳的鐵鎳系合金。於鐵鎳合金中,又以36質量%之鎳與剩餘量之鐵的合金為主成分的合金,即恆範鋼為較佳。於36質量%之鎳與剩餘量之鐵的合金為金屬板的主成分之情況下,金屬板之剩餘部分可能包含例如鉻、錳、碳、及鈷等的添加物。[Vapor deposition mask intermediate] 1 to 3 , the vapor deposition mask intermediate body will be described. The vapor deposition mask intermediate body 10 shown in FIG. 1 is formed of a metal sheet. The metal sheet is formed of, for example, an iron-nickel-based alloy or an iron-nickel-cobalt-based alloy. The iron-nickel-based alloy is, for example, an iron-nickel-based alloy containing 30 mass % or more of nickel. Among the iron-nickel alloys, an alloy mainly composed of an alloy of 36% by mass of nickel and the remaining amount of iron, that is, Hengfan steel, is preferred. In the case where an alloy of 36 mass % of nickel and the remaining amount of iron is the main component of the metal plate, the remaining portion of the metal plate may contain additives such as chromium, manganese, carbon, and cobalt.

此外,鐵鎳鈷系合金之熱膨脹係數小於鐵鎳系合金之熱膨脹係數。鐵鎳鈷系合金,例如為含有30質量%以上之鎳及3質量%以上的鈷之鐵鎳鈷系合金。於鐵鎳鈷系合金中,又以32質量%之鎳、4質量%以上且5質量%以下的鈷及剩餘量之鐵的合金為主成分之合金即超級恆範鋼為較佳。於32質量%之鎳、4質量%以上且5質量%以下的鈷及剩餘量之鐵的合金為金屬板之主成分之情況下,金屬板之剩餘部分可能包含例如鉻、錳、及碳等之添加物。In addition, the thermal expansion coefficient of the iron-nickel-cobalt-based alloy is smaller than that of the iron-nickel-based alloy. The iron-nickel-cobalt-based alloy is, for example, an iron-nickel-cobalt-based alloy containing 30 mass % or more of nickel and 3 mass % or more of cobalt. Among the iron-nickel-cobalt-based alloys, an alloy mainly composed of an alloy of 32 mass % nickel, 4 mass % or more and 5 mass % or less cobalt, and the remaining amount of iron, that is, super constant steel is preferable. When an alloy of 32 mass % nickel, 4 mass % or more and 5 mass % or less cobalt, and the remaining amount of iron are the main components of the metal plate, the remainder of the metal plate may contain, for example, chromium, manganese, and carbon, etc. of additives.

蒸鍍遮罩中間體10,具備帶狀部11、框狀部12及連結部13。帶狀部11包含邊緣11e及遮罩部11a。邊緣11e具有一對長邊11e1及一對短邊11e2。即,邊緣11e具有第一、第二長邊11e1及第一、第二短邊11e2。長邊11e1延伸的方向係長度方向DL,短邊11e2延伸的方向係寬度方向DW。長度方向DL及寬度方向DW係相互正交的方向。遮罩部11a具備複數個遮罩孔11h。各遮罩孔11h係用以藉由使蒸鍍材料通過各遮罩孔11h而對成膜對象形成既定圖案的孔。框狀部12係圍繞帶狀部11。連結部13位於帶狀部11與框狀部12之間,且將帶狀部11之至少短邊11e2連結於框狀部12。連結部13除了短邊11e2外,還將長邊11e1的一部分連結於框狀部12。蒸鍍遮罩中間體10具有表面10F及背面10R,背面10R係與表面10F為相反側的面。The vapor deposition mask intermediate body 10 includes a belt-shaped portion 11 , a frame-shaped portion 12 , and a connection portion 13 . The strip portion 11 includes an edge 11e and a shield portion 11a. The edge 11e has a pair of long sides 11e1 and a pair of short sides 11e2. That is, the edge 11e has first and second long sides 11e1 and first and second short sides 11e2. The direction in which the long side 11e1 extends is the longitudinal direction DL, and the direction in which the short side 11e2 extends is the width direction DW. The longitudinal direction DL and the width direction DW are mutually orthogonal directions. The mask portion 11a includes a plurality of mask holes 11h. Each mask hole 11h is a hole for forming a predetermined pattern on the film formation object by passing the vapor deposition material through each mask hole 11h. The frame-like portion 12 surrounds the belt-like portion 11 . The connection part 13 is located between the belt-shaped part 11 and the frame-shaped part 12 , and connects at least the short side 11 e2 of the belt-shaped part 11 to the frame-shaped part 12 . The connection part 13 connects a part of the long side 11e1 to the frame-shaped part 12 in addition to the short side 11e2. The vapor deposition mask intermediate body 10 has a front surface 10F and a back surface 10R, and the back surface 10R is a surface on the opposite side to the front surface 10F.

帶狀部11具備複數個遮罩部11a及周邊部11b。複數個遮罩部11a沿長度方向DL隔著間隔排列。各遮罩部11a例如具有長方形形狀。各遮罩部11a具有複數個遮罩孔11h。於各遮罩部11a中,複數個遮罩孔11h係依照既定規則排列。周邊部11b具有圍繞各遮罩部11a的形狀。由於本實施形態之帶狀部11具有沿長度方向DL排列的複數個遮罩部11a,因此周邊部11b具有階梯狀。周邊部11b不具有遮罩孔11h。The belt-shaped portion 11 includes a plurality of shield portions 11a and a peripheral portion 11b. The plurality of mask portions 11a are arranged at intervals along the longitudinal direction DL. Each shield portion 11a has, for example, a rectangular shape. Each mask portion 11a has a plurality of mask holes 11h. In each mask portion 11a, a plurality of mask holes 11h are arranged according to a predetermined rule. The peripheral portion 11b has a shape surrounding each of the shield portions 11a. Since the band-shaped portion 11 of the present embodiment has a plurality of mask portions 11a arranged in the longitudinal direction DL, the peripheral portion 11b has a stepped shape. The peripheral portion 11b does not have the mask hole 11h.

於蒸鍍遮罩中間體10中,帶狀部11的周邊部11b及框狀部12具有第一板厚。第一板厚例如為15μm以上且30μm以下。再者,帶狀部11的遮罩部11a可具有第一板厚,也可具有較第一板厚薄的第二板厚。再者,於遮罩部11a具有第二板厚之情況下,於形成在遮罩部11a之複數個遮罩孔11h中,相互鄰接的遮罩孔11h相連。藉此,遮罩部11a具有第二板厚。In the vapor deposition mask intermediate body 10 , the peripheral portion 11 b of the band-shaped portion 11 and the frame-shaped portion 12 have the first plate thickness. The first plate thickness is, for example, 15 μm or more and 30 μm or less. Furthermore, the shield portion 11a of the strip portion 11 may have a first plate thickness, or may have a second plate thickness thinner than the first plate thickness. Furthermore, when the mask portion 11a has the second thickness, among the plurality of mask holes 11h formed in the mask portion 11a, the mask holes 11h adjacent to each other are connected to each other. Thereby, the shield part 11a has a 2nd plate thickness.

於圖1所示之例子中,於寬度方向DW上隔開間隔地排列2個帶狀部11。再者,於蒸鍍遮罩中間體10中,也可於寬度方向DW上僅配置一個帶狀部11,或者也可排列3個以上。於長度方向DL上,排列於寬度方向DW的2個帶狀部11係隔開間隔配置。In the example shown in FIG. 1, two strip-shaped parts 11 are arranged at intervals in the width direction DW. In addition, in the vapor deposition mask intermediate body 10, only one strip portion 11 may be arranged in the width direction DW, or three or more may be arranged. In the longitudinal direction DL, the two strip-shaped portions 11 arranged in the width direction DW are arranged at intervals.

自與蒸鍍遮罩中間體10之表面10F對向的視點觀察,框狀部12具有圍繞帶狀部11的形狀。框狀部12具有個別地圍繞各帶狀部11的形狀。The frame-shaped portion 12 has a shape surrounding the belt-shaped portion 11 when viewed from a viewpoint opposite to the surface 10F of the vapor deposition mask intermediate body 10 . The frame-shaped portion 12 has a shape that surrounds each of the belt-shaped portions 11 individually.

連結部13及縫隙10S係位於帶狀部11與框狀部12的邊界上。縫隙10S係於蒸鍍遮罩中間體10的厚度方向上貫通蒸鍍遮罩中間體10。縫隙10S係於帶狀部11與框狀部12之邊界中相對於遮罩部11a位於寬度方向DW上。複數個遮罩部11a係於寬度方向DW上被一對縫隙10S夾持。The connection portion 13 and the slit 10S are located on the boundary between the belt-shaped portion 11 and the frame-shaped portion 12 . The slit 10S penetrates the vapor deposition mask intermediate body 10 in the thickness direction of the vapor deposition mask intermediate body 10 . The slit 10S is located in the width direction DW with respect to the mask portion 11 a in the boundary between the strip portion 11 and the frame portion 12 . The plurality of mask portions 11a are sandwiched by a pair of slits 10S in the width direction DW.

連結部13係於帶狀部11與框狀部12之邊界中位於除了縫隙10S所在的部分以外之部分的整體上。連結部13可為例如半蝕刻線。連結部13也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分而形成。或者,連結部13也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分而形成。The connection part 13 is located in the whole part except the part where the slit 10S exists in the boundary of the belt-shaped part 11 and the frame-shaped part 12. The connecting portion 13 may be, for example, a half-etched line. The connecting portion 13 may be formed by a plurality of through holes arranged at intervals along the boundary between the band-shaped portion 11 and the frame-shaped portion 12, and a part of the metal sheet located between the adjacent through holes. Alternatively, the connecting portion 13 may be formed by a plurality of half-etched portions arranged at intervals along the boundary between the belt-like portion 11 and the frame-like portion 12, and a part of the metal sheet located between the adjacent half-etched portions. form.

於連結部13具備複數個半蝕刻部或複數個貫通孔之情況下,例如,半蝕刻部或貫通孔的長度,可為90μm以上且180μm以下,寬度可為60μm以上且90μm以下,且配置其等的間距可為180μm以上且270μm以下。再者,半蝕刻部或貫通孔的長度係沿連結部13延伸之方向的大小,寬度係沿與連結部13延伸之方向正交的方向的大小。再者,半蝕刻部之深度,例如可為第一板厚的50%以上且80%以下。When the connecting portion 13 includes a plurality of half-etched portions or a plurality of through holes, for example, the length of the half-etched portions or the through-holes may be 90 μm or more and 180 μm or less, and the width may be 60 μm or more and 90 μm or less, and they are arranged. The equal pitch may be 180 μm or more and 270 μm or less. In addition, the length of the half-etched portion or the through hole is the size along the direction in which the connecting portion 13 extends, and the width is the size along the direction orthogonal to the direction in which the connecting portion 13 extends. Furthermore, the depth of the half-etched portion may be, for example, 50% or more and 80% or less of the first plate thickness.

或者,連結部13也可藉由半蝕刻線、及於半蝕刻線上隔開間隔地排列的複數個貫通孔而形成。於此情況下,半蝕刻線之寬度,例如可為100μm以上且150μm以下。半蝕刻線之深度,例如可為第一板厚的50%以上且80%以下。位於半蝕刻線上之貫通孔的直徑,例如可為相對於半蝕刻線之寬度的50%以上且80%以下。於半蝕刻線上配置貫通孔的間距,例如可為100μm以上且500μm以下。Alternatively, the connection portion 13 may be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. In this case, the width of the half-etched line may be, for example, 100 μm or more and 150 μm or less. The depth of the half-etched line may be, for example, 50% or more and 80% or less of the first plate thickness. The diameter of the through hole on the half-etched line may be, for example, 50% or more and 80% or less of the width of the half-etched line. The pitch at which the through holes are arranged on the half-etched line may be, for example, 100 μm or more and 500 μm or less.

再者,半蝕刻線及半蝕刻部係於厚度方向上蝕刻金屬製片材中的一部分的部分。連結部13係機械強度低於帶狀部11及框狀部12的部分。Furthermore, the half-etched line and the half-etched portion are portions that etch a part of the metal sheet in the thickness direction. The connection portion 13 is a portion whose mechanical strength is lower than that of the belt-shaped portion 11 and the frame-shaped portion 12 .

圖2顯示與表面10F正交且沿朝寬度方向DW延伸之平面的遮罩部11a之剖面構造。 如圖2所示,形成於遮罩部11a之各遮罩孔11h,具有大孔11hL及小孔11hS。大孔11hL開口於蒸鍍遮罩中間體10的表面10F。另一方面,小孔11hS開口於蒸鍍遮罩中間體10的背面10R。自與表面10F對向的視點觀察,位於表面10F之大孔11hL的開口大於位於背面10R之小孔11hS的開口。於蒸鍍遮罩中間體10之厚度方向上的中間,一個大孔11hL連接於一個小孔11hS。FIG. 2 shows a cross-sectional structure of the mask portion 11a along a plane that is orthogonal to the surface 10F and extends in the width direction DW. As shown in FIG. 2 , each of the mask holes 11h formed in the mask portion 11a has a large hole 11hL and a small hole 11hS. The large hole 11hL is opened on the surface 10F of the vapor deposition mask intermediate body 10 . On the other hand, the small hole 11hS is opened on the back surface 10R of the vapor deposition mask intermediate body 10 . From the viewpoint opposite to the surface 10F, the openings of the large holes 11hL located on the surface 10F are larger than the openings of the small holes 11hS located on the rear surface 10R. In the middle of the vapor deposition mask intermediate body 10 in the thickness direction, a large hole 11hL is connected to a small hole 11hS.

遮罩部11a具有之複數個遮罩孔11h係藉由前述片材的濕式蝕刻而形成。於片材之濕式蝕刻中,首先,藉由自片材的背面朝向表面之片材的蝕刻,形成複數個小孔11hS。用以形成小孔11hS的蝕刻步驟係第一蝕刻步驟。接著,藉由自片材之表面朝向背面之片材的蝕刻,形成一個一個地連接於各小孔11hS的大孔11hL。用以形成大孔11hL的蝕刻步驟係第二蝕刻步驟。The plurality of mask holes 11h included in the mask portion 11a are formed by wet etching of the aforementioned sheet. In the wet etching of the sheet, first, a plurality of small holes 11hS are formed by etching the sheet from the back surface of the sheet toward the surface. The etching step for forming the small holes 11hS is the first etching step. Next, the large holes 11hL connected to the small holes 11hS one by one are formed by etching from the surface of the sheet toward the back of the sheet. The etching step for forming the large hole 11hL is the second etching step.

自與蒸鍍遮罩中間體10之表面10F對向的視點觀察,於各遮罩部11a上以可製造例如具有300ppi以上且1000ppi以下之解像度的顯示裝置之方式形成有具有既定大小及排列的複數個遮罩孔11h。Viewed from a viewpoint opposite to the surface 10F of the vapor deposition mask intermediate body 10, on each mask portion 11a, a display device having a resolution of 300 ppi or more and 1000 ppi or less is formed on each mask portion 11a with a predetermined size and arrangement. A plurality of mask holes 11h.

圖3一併顯示帶狀部11中之包含一個短邊11e2的部分、及位於該短邊11e2周圍之框狀部12的一部分。再者,於帶狀部11中,包含一短邊11e2之部分與包含另一短邊11e2的部分係在長度方向DL上的位置彼此不同,另一方面,自與帶狀部11展開之平面對向的俯視視點下的構造相同。FIG. 3 shows a portion of the strip portion 11 including one short side 11e2 and a portion of the frame portion 12 located around the short side 11e2. Furthermore, in the belt portion 11 , the positions of the portion including one short side 11e2 and the portion including the other short side 11e2 in the longitudinal direction DL are different from each other, and on the other hand, from the plane extending from the belt portion 11 The configuration is the same in the opposite top view point of view.

如圖3所示,帶狀部11具備線狀之脆弱線11RC1及切除區域11RC。脆弱線11RC1的兩端連接於短邊11e2,脆弱線11RC1具有自該短邊11e2朝向另一短邊11e2的突狀。即,脆弱線11RC1具有自第一短邊11e2朝向第二短邊11e2的突狀。切除區域11RC係藉由短邊11e2中之被夾持於脆弱線11RC1兩端之線段11e21及脆弱線11RC1包圍,且包含線段11e21及脆弱線11RC1。蒸鍍遮罩中間體10具備貫通孔11RC2。貫通孔11RC2係於切除區域11RC內連接於包圍切除區域11RC之邊緣的一部分。於本實施形態中,由於線段11e21與脆弱線11RC1兩者係藉由貫通孔11RC2隔斷,因此切除區域11RC係藉由以線段11e21及脆弱線11RC1形成的開環之邊緣包圍。As shown in FIG. 3 , the band-shaped portion 11 includes a linear line of weakness 11RC1 and a cut-out region 11RC. Both ends of the fragile line 11RC1 are connected to the short side 11e2, and the fragile line 11RC1 has a protruding shape from the short side 11e2 toward the other short side 11e2. That is, the line of weakness 11RC1 has a protruding shape from the first short side 11e2 toward the second short side 11e2. The cutout region 11RC is surrounded by the line segment 11e21 and the line of weakness 11RC1 in the short side 11e2 sandwiched by both ends of the line of weakness 11RC1, and includes the line segment 11e21 and the line of weakness 11RC1. The vapor deposition mask intermediate body 10 includes through holes 11RC2. The through hole 11RC2 is connected to a part of the edge surrounding the cutout region 11RC within the cutout region 11RC. In this embodiment, since both the line segment 11e21 and the fragile line 11RC1 are separated by the through hole 11RC2, the cutout region 11RC is surrounded by the edge of the open loop formed by the line segment 11e21 and the fragile line 11RC1.

於藉由濕式蝕刻對金屬製的片材進行圖案化而製造蒸鍍遮罩中間體10時,由於僅在切除區域11RC的一部分形成貫通孔11RC2,因此與藉由濕式蝕刻將所有切除區域11RC貫通之情況比較,金屬製的片材中露出於蝕刻液的面積小。因此,蝕刻液難以於阻劑遮罩與片材之間產生環繞,並且藉由濕式蝕刻所形成之蒸鍍遮罩中間體10的形狀,難以受到用於濕式蝕刻之蝕刻液的流速左右。因此,可抑制如藉由濕式蝕刻去除整個切除區域11RC般的情況那樣因濕式蝕刻所致的齒痕。其結果,可提高圖案化之形狀的精度。When a metal sheet is patterned by wet etching to manufacture the vapor deposition mask intermediate 10, since the through-hole 11RC2 is formed only in a part of the cutout region 11RC, it is different from that of the entire cutout region by wet etching. Compared with the case of 11RC penetration, the area exposed to the etching solution in the metal sheet is small. Therefore, it is difficult for the etching solution to form a circle between the resist mask and the sheet, and the shape of the vapor deposition mask intermediate 10 formed by wet etching is difficult to be affected by the flow rate of the etching solution used for wet etching. . Therefore, it is possible to suppress tooth marks caused by wet etching as in the case where the entire cutout region 11RC is removed by wet etching. As a result, the accuracy of the patterned shape can be improved.

再者,如上述,由於切除區域11RC係藉由連結部13之一部分及脆弱線11RC1包圍,因此藉由將連結部13及脆弱線11RC1切斷,可相對於各短邊11e2形成自該短邊11e2朝另一短邊11e2凹陷的缺口。Furthermore, as described above, since the cutout region 11RC is surrounded by a part of the connecting portion 13 and the fragile line 11RC1, by cutting the connecting portion 13 and the fragile line 11RC1, it can be formed from the short side 11e2 relative to each short side. 11e2 is a recessed notch toward the other short side 11e2.

也可於蒸鍍遮罩中間體10設定第一虛擬線L1及第二虛擬線L2。第一虛擬線L1係沿各短邊11e2之中央部延伸的線。各短邊11e2之中央部係於寬度方向DW上包含短邊11e2之中央的線段11e21。短邊11e2之中央部,例如為於寬度方向DW上將短邊11e2一分為三後之中央。第二虛擬線L2係連接於第一虛擬線L1的兩端,且具有自該第一虛擬線L1朝向另一第一虛擬線L1的突狀之線。於本實施形態中,第二虛擬線L2具有自一短邊11e2朝向另一短邊11e2的U字形。再者,第二虛擬線L2例如也可具有大致V字形。The first dummy line L1 and the second dummy line L2 can also be set in the vapor deposition mask intermediate body 10 . The first imaginary line L1 is a line extending along the central portion of each short side 11e2. The center portion of each short side 11e2 is connected to a line segment 11e21 including the center of the short side 11e2 in the width direction DW. The center part of the short side 11e2 is, for example, the center after dividing the short side 11e2 into three in the width direction DW. The second dummy line L2 is connected to both ends of the first dummy line L1, and has a protruding line from the first dummy line L1 toward another first dummy line L1. In this embodiment, the second virtual line L2 has a U-shape from one short side 11e2 to the other short side 11e2. Furthermore, the second dummy line L2 may have a substantially V-shape, for example.

連結部13包含短邊脆弱線13a。帶狀部11具備切除區域11RC及前述的脆弱線11RC1。脆弱線11RC1係位於沿第二虛擬線L2的至少一部分之位置。切除區域11RC係藉由第一虛擬線L1及第二虛擬線L2包圍的區域。蒸鍍遮罩中間體10具備貫通孔11RC2。貫通孔11RC2係於切除區域11RC內連接於圍繞切除區域11RC之邊緣的一部分。於使用第一虛擬線L1及第二虛擬線L2定義切除區域11RC之情況下,第一虛擬線L1與第二虛擬線L2形成具有包圍切除區域11RC之閉環狀的邊緣。The connection portion 13 includes the short-side fragile line 13a. The strip portion 11 includes a cutout region 11RC and the aforementioned line of weakness 11RC1. The line of weakness 11RC1 is located along at least a portion of the second virtual line L2. The cutout region 11RC is a region surrounded by the first imaginary line L1 and the second imaginary line L2. The vapor deposition mask intermediate body 10 includes through holes 11RC2. The through hole 11RC2 is connected to a part of the edge surrounding the cutout region 11RC within the cutout region 11RC. When the cutout region 11RC is defined by the first dummy line L1 and the second dummy line L2, the first dummy line L1 and the second dummy line L2 form an edge having a closed loop surrounding the cutout region 11RC.

貫通孔11RC2具有自第一端部RC21朝第二端部RC22延伸的形狀。第一端部RC21連接於線段11e21。第二端部RC22連接於脆弱線11RC1。The through hole 11RC2 has a shape extending from the first end portion RC21 toward the second end portion RC22. The first end portion RC21 is connected to the line segment 11e21. The second end RC22 is connected to the frangible line 11RC1.

由於貫通孔11RC2連接於線段11e21及脆弱線11RC1,因此可以貫通孔11RC2作為起首,於連結部13中將沿線段11e21的短邊脆弱線13a及脆弱線11RC1兩者切斷。因此,與貫通孔11RC2不連接於線段11e21及脆弱線11RC1之任一者的情況比較,容易將連結部13及脆弱線11RC1切斷。Since the through hole 11RC2 is connected to the line segment 11e21 and the line of weakness 11RC1, the through hole 11RC2 can be used as a starter to cut both the line of weakness 13a and the line of weakness 11RC1 along the short side of the line segment 11e21 in the connecting portion 13. Therefore, compared with the case where the through-hole 11RC2 is not connected to any one of the line segment 11e21 and the fragile line 11RC1, the connecting portion 13 and the fragile line 11RC1 are easily cut off.

再者,短邊脆弱線13a係位於第一虛擬線L1中之除了連接有第一端部RC21的部分以外的部分上。即,短邊脆弱線13a係藉由貫通孔11RC2的第一端部RC21隔斷。脆弱線11RC1係位於第二虛擬線L2中之除了連接有第二端部RC22的部分以外的部分上。即,脆弱線11RC1係藉由貫通孔11RC2的第二端部RC22隔斷。Furthermore, the short-side fragile line 13a is located on a portion of the first dummy line L1 other than the portion to which the first end portion RC21 is connected. That is, the short-side fragile line 13a is blocked by the first end portion RC21 of the through hole 11RC2. The frangible line 11RC1 is located on a portion of the second dummy line L2 other than the portion to which the second end portion RC22 is connected. That is, the fragile line 11RC1 is blocked by the second end portion RC22 of the through hole 11RC2.

脆弱線11RC1具有大致U字形。於本實施形態中,脆弱線11RC1係藉由貫通孔11RC2隔斷,具有缺少U字之彎曲部的一部分之形狀。貫通孔11RC2具有沿長邊11e1延伸的帶狀。換言之,貫通孔11RC2係沿長度方向DL延伸。因此,貫通孔11RC2之第二端部RC22連接於脆弱線11RC1中的彎曲之部分、換言之、第二虛擬線L2中的彎曲之部分。如此,由於貫通孔11RC2沿長邊11e1延伸,因此可藉由貫通孔11RC2將脆弱線11RC1中彎曲的部分隔斷。因此,與貫通孔11RC2沿短邊11e2延伸的情況比較,更容易進行脆弱線11RC1的切斷。The frangible line 11RC1 has a substantially U-shape. In this embodiment, the fragile line 11RC1 is cut off by the through hole 11RC2, and has a shape that lacks a part of the U-shaped bent portion. The through-hole 11RC2 has a strip shape extending along the long side 11e1. In other words, the through hole 11RC2 extends in the longitudinal direction DL. Therefore, the second end portion RC22 of the through hole 11RC2 is connected to the curved portion of the fragile line 11RC1, in other words, the curved portion of the second dummy line L2. In this way, since the through hole 11RC2 extends along the long side 11e1, the bent portion of the fragile line 11RC1 can be cut off by the through hole 11RC2. Therefore, compared with the case where the through-hole 11RC2 extends along the short side 11e2, the frangible line 11RC1 can be cut more easily.

第一端部RC21係於寬度方向DW上將線段11e21二等分。並且,第二端部RC22將脆弱線11RC1之長度二等分。即,第一端部RC21係於短邊11e2延伸之寬度方向DW上連接於第一虛擬線L1的中央。第二端部RC22連接於第二虛擬線L2中的U字之底部。底部係U字的彎曲部。藉此,由於切除區域11RC藉由貫通孔11RC2而被二等分,因此與以具有偏差的方式藉由貫通孔11RC2將切除區域11RC二分割之情況比較,不易於為了去除藉由切除區域11RC之二分割所形成的各部分而需要的負載上產生偏差。因此,容易去除切除區域11RC。The first end portion RC21 bisects the line segment 11e21 in the width direction DW. In addition, the second end portion RC22 bisects the length of the fragile line 11RC1. That is, the first end portion RC21 is connected to the center of the first dummy line L1 in the width direction DW in which the short side 11e2 extends. The second end portion RC22 is connected to the bottom of the U shape in the second dummy line L2. The bottom is a U-shaped curved part. Thereby, since the cutout region 11RC is divided into two parts by the through hole 11RC2, compared with the case where the cutout region 11RC is divided into two parts by the through hole 11RC2 with a deviation, it is not easy to remove the cutout region 11RC. Variation occurs in the load required for each part formed by dividing into two parts. Therefore, the cutout region 11RC is easily removed.

換言之,貫通孔11RC2具有連結切除區域11RC中之最靠近另一短邊11e2的位置、與框狀部12中之與短邊11e2對向的位置之帶狀。即,貫通孔11RC2具有帶狀,該帶狀包含切除區域11RC中的最靠近第二短邊11e2之位置、及框狀部12中之與第一短邊11e2對向的位置。由於貫通孔11RC2連通脆弱線11RC1與連結部13,因此可以貫通孔11RC2作為起首,將脆弱線11RC1及連結部13兩者切斷。因此,與貫通孔11RC2不連通脆弱線11RC1及連結部13的情況比較,更容易將脆弱線11RC1及連結部13切斷。In other words, the through hole 11RC2 has a strip shape connecting the position closest to the other short side 11e2 in the cutout region 11RC and the position opposite to the short side 11e2 in the frame-shaped portion 12 . That is, the through hole 11RC2 has a band shape including the position closest to the second short side 11e2 in the cutout region 11RC and the position of the frame-shaped portion 12 facing the first short side 11e2. Since the through-hole 11RC2 communicates the fragile line 11RC1 and the connecting portion 13 , both the fragile line 11RC1 and the connecting portion 13 can be cut off by the through-hole 11RC2 starting from the through-hole 11RC2 . Therefore, compared with the case where the through-hole 11RC2 does not communicate with the fragile line 11RC1 and the connecting portion 13, the fragile line 11RC1 and the connecting portion 13 are more easily cut.

於寬度方向DW上,第一端部RC21之長度與第二端部RC22的長度的總和係第一長度。線段11e21之長度與脆弱線11RC1的長度的總和係第二長度。第二長度大於第一長度。In the width direction DW, the sum of the length of the first end portion RC21 and the length of the second end portion RC22 is the first length. The sum of the length of the line segment 11e21 and the length of the fragile line 11RC1 is the second length. The second length is greater than the first length.

再者,沿寬度方向DW之貫通孔11RC2的寬度,例如可為1mm以上且5mm以下,沿長度方向DL之貫通孔11RC2的長度,例如可為20mm以上且4050mm以下。此外,線段11e21的長度,例如可為15mm以上且40mm以下。Furthermore, the width of the through hole 11RC2 along the width direction DW may be, for example, 1 mm or more and 5 mm or less, and the length of the through hole 11RC2 along the longitudinal direction DL may be, for example, 20 mm or more and 4050 mm or less. In addition, the length of the line segment 11e21 may be, for example, 15 mm or more and 40 mm or less.

蒸鍍遮罩中間體10係形成於藉由輥對輥裝置搬送之金屬製片材上。於蒸鍍遮罩中間體10中,由於第二長度較第一長度長,因此與第二長度較第一長度短的情況比較,形成貫通孔11RC2之後的切除區域11RC可藉由框狀部12穩定地支撐。因此,於蒸鍍遮罩中間體10之搬送時,可抑制自框狀部12將切除區域11RC切斷。The vapor deposition mask intermediate 10 is formed on a metal sheet conveyed by a roll-to-roll device. In the vapor deposition mask intermediate body 10 , since the second length is longer than the first length, compared with the case where the second length is shorter than the first length, the cutout region 11RC after the through hole 11RC2 is formed can be formed by the frame portion 12 . Stable support. Therefore, when the vapor deposition mask intermediate body 10 is conveyed, the cutout region 11RC can be prevented from being cut from the frame-shaped portion 12 .

由於短邊脆弱線13a係連結部13的一部分,因此如上述,短邊脆弱線13a係機械強度較帶狀部11及框狀部12低的部分。如上述,短邊脆弱線13a例如也可為半蝕刻線。短邊脆弱線13a可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分形成。或者,短邊脆弱線13a也可藉由具有沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分而形成。或者,短邊脆弱線13a也可藉由半蝕刻線、及於半蝕刻線上隔開間隔地排列的複數個貫通孔而形成。即,短邊脆弱線13a也可藉由交互排列的半蝕刻部及貫通孔而形成。Since the short-side fragile line 13 a is a part of the connection portion 13 , as described above, the short-side fragile line 13 a is a portion lower in mechanical strength than the belt-shaped portion 11 and the frame-shaped portion 12 . As described above, the short-side fragile line 13a may be, for example, a half-etched line. The short-side frangible line 13a can be formed by a plurality of through holes arranged at intervals along the boundary between the band-shaped portion 11 and the frame-shaped portion 12, and a part of the metal sheet located between the adjacent through-holes. Alternatively, the short-side frangible line 13a may be formed by having a plurality of half-etched portions arranged at intervals along the boundary between the strip portion 11 and the frame-like portion 12, and a metal sheet located between the adjacent half-etched portions. part of it is formed. Alternatively, the short-side fragile line 13a may be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the short-side fragile line 13a may be formed by alternately arranging half-etched portions and through holes.

脆弱線11RC1亦為機械強度低於帶狀部11及框狀部12的部分。脆弱線11RC1與短邊脆弱線13a同樣,例如也可為半蝕刻線。脆弱線11RC1也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分而形成。或者,脆弱線11RC1也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分而形成。或者,脆弱線11RC1也可藉由半蝕刻線、及於半蝕刻線上隔開間隔排列的複數個貫通孔而形成。即,脆弱線11RC1,也可藉由交互排列的半蝕刻部及貫通孔而形成。The weak line 11RC1 is also a portion whose mechanical strength is lower than that of the belt-shaped portion 11 and the frame-shaped portion 12 . Like the short-side fragile line 13a, the fragile line 11RC1 may be, for example, a half-etched line. The line of weakness 11RC1 may also be formed by a plurality of through holes arranged at intervals along the boundary between the band-shaped portion 11 and the frame-shaped portion 12, and a part of the metal sheet between the adjacent through holes. Alternatively, the line of weakness 11RC1 may be formed by a plurality of half-etched parts arranged at intervals along the boundary between the strip-shaped part 11 and the frame-shaped part 12, and a part of the metal sheet located between the adjacent half-etched parts. form. Alternatively, the fragile line 11RC1 may be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the fragile line 11RC1 may be formed by alternately arranging half-etched portions and through holes.

於脆弱線11RC1具有複數個半蝕刻部或複數個貫通孔的情況下,例如,半蝕刻部或貫通孔的長度可為90μm以上且180μm以下,寬度可為60μm以上且90μm以下,且配置其等之間距可為180μm以上且270μm以下。再者,半蝕刻部或貫通孔之長度係沿脆弱線11RC1延伸之方向的大小,寬度係沿與脆弱線11RC1延伸之方向正交的方向的大小。再者,半蝕刻部的深度例如可為第一板厚的50%以上且80%以下。When the line of weakness 11RC1 has a plurality of half-etched portions or a plurality of through holes, for example, the length of the half-etched portions or the through-holes may be 90 μm or more and 180 μm or less, and the width may be 60 μm or more and 90 μm or less, and the like may be arranged. The pitch may be 180 μm or more and 270 μm or less. In addition, the length of the half-etched portion or the through hole is the size along the direction in which the fragile line 11RC1 extends, and the width is the size in the direction orthogonal to the direction in which the fragile line 11RC1 extends. Furthermore, the depth of the half-etched portion may be, for example, 50% or more and 80% or less of the first plate thickness.

或者,脆弱線11RC1也可藉由半蝕刻線、及於半蝕刻線上隔開間隔排列之複數個貫通孔而形成。即,脆弱線11RC1也可藉由交互排列的半蝕刻部及貫通孔而形成。於此情況下,半蝕刻線的寬度,例如可為100μm以上且150μm以下。半蝕刻線的深度,例如可為第一板厚的50%以上且80%以下。位於半蝕刻線上之貫通孔的直徑,例如可為相對於半蝕刻線之寬度的50%以上且80%以下。於半蝕刻線上配置貫通孔的間距,例如可為100μm以上且500μm以下。Alternatively, the fragile line 11RC1 can also be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the fragile line 11RC1 may be formed by alternately arranging half-etched portions and through holes. In this case, the width of the half-etched line may be, for example, 100 μm or more and 150 μm or less. The depth of the half-etched line may be, for example, 50% or more and 80% or less of the first plate thickness. The diameter of the through hole on the half-etched line may be, for example, 50% or more and 80% or less of the width of the half-etched line. The pitch at which the through holes are arranged on the half-etched line may be, for example, 100 μm or more and 500 μm or less.

再者,短邊脆弱線13a之構造與脆弱線11RC1的構造,可彼此相同或不同。例如,短邊脆弱線13a,可藉由半蝕刻線、及於半蝕刻線上隔開間隔排列的複數個貫通孔形成。脆弱線11RC1,例如可藉由複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分形成。或者,脆弱線11RC1,可藉由複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分形成。Furthermore, the structure of the short-side weak line 13a and the structure of the weak line 11RC1 may be the same or different from each other. For example, the short-side fragile line 13a can be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. The fragile line 11RC1 can be formed by, for example, a plurality of through holes and a part of the metal sheet located between the adjacent through holes. Alternatively, the line of weakness 11RC1 may be formed by a plurality of half-etched portions and a portion of the metal sheet located between adjacent half-etched portions.

貫通孔11RC2係藉由第一蝕刻步驟及第二蝕刻步驟形成。此外,貫通孔11RC2,也可藉由第一蝕刻步驟及第二蝕刻步驟之任一者形成。The through hole 11RC2 is formed by the first etching step and the second etching step. In addition, the through hole 11RC2 may be formed by any one of the first etching step and the second etching step.

於包含短邊脆弱線13a之連結部13具有半蝕刻部或半蝕刻線的情況下,連結部13可藉由第一蝕刻步驟形成。再者,具備半蝕刻部或半蝕刻線的連結部13,也可藉由第二蝕刻步驟形成。於連結部13具有貫通孔之情況下,連結部13可藉由第一蝕刻步驟及第二蝕刻步驟形成。再者,具備貫通孔的連結部13,也可藉由第一蝕刻步驟及第二蝕刻步驟中之任一者形成。In the case where the connecting portion 13 including the short-side weak line 13a has a half-etched portion or a half-etched line, the connecting portion 13 can be formed by the first etching step. Furthermore, the connecting portion 13 including the half-etched portion or the half-etched line can also be formed by the second etching step. In the case where the connecting portion 13 has a through hole, the connecting portion 13 can be formed by the first etching step and the second etching step. In addition, the connection part 13 provided with the through-hole may be formed by any one of the first etching step and the second etching step.

於脆弱線11RC1具備半蝕刻部或半蝕刻線之情況下,脆弱線11RC1,可藉由第一蝕刻步驟形成。再者,具備半蝕刻部或半蝕刻線的脆弱線11RC1,也可藉由第二蝕刻步驟形成。於脆弱線11RC1具備貫通孔之情況下,脆弱線11RC1可藉由第一蝕刻步驟及第二蝕刻步驟形成。再者,具有貫通孔的脆弱線11RC1也可藉由第一蝕刻步驟及第二蝕刻步驟之任一者而形成。In the case where the fragile line 11RC1 has a half-etched portion or a half-etched line, the fragile line 11RC1 can be formed by the first etching step. Furthermore, the fragile line 11RC1 including the half-etched portion or the half-etched line can also be formed by the second etching step. In the case where the fragile line 11RC1 has a through hole, the fragile line 11RC1 can be formed by the first etching step and the second etching step. Furthermore, the fragile line 11RC1 having the through hole may be formed by any one of the first etching step and the second etching step.

當自蒸鍍遮罩中間體10獲取蒸鍍遮罩時,首先,將連結部13切斷,使帶狀部11整體自框狀部12切離。此時,連結部13之一部分即短邊脆弱線13a也被切斷。接著,將脆弱線11RC1切斷,使切除區域11RC整體自帶狀部11切離。此時,由於將脆弱線11RC1自連接於第二端部RC22的部分朝位於短邊11e2上的端部切斷,因此容易將脆弱線11RC1切斷。再者,也可將脆弱線11RC1自位於短邊11e2上的端部朝連接於第二端部RC22的部分切斷。When the vapor deposition mask is obtained from the vapor deposition mask intermediate body 10 , first, the connecting portion 13 is cut, and the entire belt-shaped portion 11 is cut away from the frame-shaped portion 12 . At this time, the short-side weak line 13a, which is a part of the connecting portion 13, is also cut. Next, the line of weakness 11RC1 is cut, and the entire cutout region 11RC is cut away from the belt-like portion 11 . At this time, since the frangible wire 11RC1 is cut from the portion connected to the second end portion RC22 toward the end portion located on the short side 11e2, the frangible wire 11RC1 is easily cut. Furthermore, the fragile line 11RC1 may be cut from the end portion located on the short side 11e2 toward the portion connected to the second end portion RC22.

[遮罩裝置] 參照圖4至圖6,對遮罩裝置進行說明。 如圖4所示,遮罩裝置20具備遮罩框架21及複數個蒸鍍遮罩11M。於圖4所示之例子中,遮罩裝置20具備2個蒸鍍遮罩11M,但遮罩裝置20可具備一個以上之任意數量的蒸鍍遮罩11M。[mask device] 4 to 6, the mask device will be described. As shown in FIG. 4 , the mask device 20 includes a mask frame 21 and a plurality of vapor deposition masks 11M. In the example shown in FIG. 4 , the mask device 20 includes two vapor deposition masks 11M, but the mask device 20 may include more than one vapor deposition mask 11M in any number.

蒸鍍遮罩11M具有帶狀。蒸鍍遮罩11M具有邊緣11e,該邊緣11e具有一對長邊11e1及一對短邊11e2。蒸鍍遮罩11M具備複數個遮罩部11a。蒸鍍遮罩11M的長邊11e1對應於帶狀部11的長邊11e1,蒸鍍遮罩11M的短邊11e2對應於帶狀部11的短邊11e2。蒸鍍遮罩11M的各短邊11e2包含缺口11e22,缺口11e22具有朝另一短邊11e2凹陷的U字形。缺口11e22於U字之底部之至少一部分具有切斷痕。底部為U字之彎曲部。蒸鍍遮罩11M具有彼此對向的表面11F及背面11R。蒸鍍遮罩11M之表面11F係蒸鍍遮罩中間體10之表面10F的一部分,蒸鍍遮罩11M的背面11R係蒸鍍遮罩中間體10之背面10R的一部分。The vapor deposition mask 11M has a belt shape. The vapor deposition mask 11M has an edge 11e, and the edge 11e has a pair of long sides 11e1 and a pair of short sides 11e2. The vapor deposition mask 11M includes a plurality of mask portions 11a. The long side 11e1 of the vapor deposition mask 11M corresponds to the long side 11e1 of the strip portion 11 , and the short side 11e2 of the vapor deposition mask 11M corresponds to the short side 11e2 of the strip portion 11 . Each of the short sides 11e2 of the vapor deposition mask 11M includes a notch 11e22 , and the notch 11e22 has a U-shape recessed toward the other short side 11e2 . The notch 11e22 has a cutting mark in at least a part of the bottom part of the U-shape. The bottom is the curved part of the U shape. The vapor deposition mask 11M has a front surface 11F and a back surface 11R facing each other. The front surface 11F of the vapor deposition mask 11M is a part of the surface 10F of the vapor deposition mask intermediate body 10 , and the back surface 11R of the vapor deposition mask 11M is a part of the back surface 10R of the vapor deposition mask intermediate body 10 .

遮罩框架21具有矩形框狀。遮罩框架21係金屬製。較佳為,遮罩框架21係藉由與形成蒸鍍遮罩11M之金屬相同的金屬形成。The mask frame 21 has a rectangular frame shape. The mask frame 21 is made of metal. Preferably, the mask frame 21 is formed of the same metal as that used to form the vapor deposition mask 11M.

各蒸鍍遮罩11M之表面11F的一部分接合於遮罩框架21。各蒸鍍遮罩11M係以該蒸鍍遮罩11M具備之複數個遮罩部11a位於遮罩框架21劃分的開口之方式接合於遮罩框架21。各蒸鍍遮罩11M係於長度方向DL,且在位於一個缺口11e22與最靠近該缺口11e22的遮罩部11a之間的部分上接合於遮罩框架21。此外,各蒸鍍遮罩11M係於長度方向DL,且在位於另一缺口11e22與最靠近該缺口11e22的遮罩部11a之間的部分上接合於遮罩框架21。A part of the surface 11F of each vapor deposition mask 11M is joined to the mask frame 21 . Each vapor deposition mask 11M is joined to the mask frame 21 so that the plurality of mask portions 11a included in the vapor deposition mask 11M are located in the openings divided by the mask frame 21 . Each vapor deposition mask 11M is in the longitudinal direction DL, and is joined to the mask frame 21 at a portion between one of the notch 11e22 and the mask portion 11a closest to the notch 11e22. In addition, each vapor deposition mask 11M is in the longitudinal direction DL, and is joined to the mask frame 21 at a portion between the other notch 11e22 and the mask portion 11a closest to the notch 11e22.

圖5放大顯示圖4中的區域A。區域A包含缺口11e22中的彎曲部。再者,圖5顯示脆弱線11RC1具備半蝕刻線及位於半蝕刻線上之複數個貫通孔之情況的區域A的構造。FIG. 5 shows an enlarged view of the area A in FIG. 4 . Region A contains the bend in the notch 11e22. 5 shows the structure of the region A in the case where the fragile line 11RC1 includes a half-etched line and a plurality of through holes located on the half-etched line.

如圖5所示,切斷痕11em位於劃分缺口11e22的邊上。切斷痕11em係藉由脆弱線11RC1之切斷而形成的部分。切斷痕11em具備複數個捲曲11em1及複數個凹陷11em2。於切斷痕11em延伸的方向上,捲曲11em1與凹陷11em2交互排列。於切斷痕11em上,複數個捲曲11em1係藉由切斷半蝕刻線而形成的部分。於切斷痕11em上,各凹陷11em2係對應於各貫通孔的部分。As shown in FIG. 5 , the cutting line 11em is located on the side of the dividing notch 11e22. The cutting trace 11em is a portion formed by cutting the fragile line 11RC1. The cutting line 11em includes a plurality of curls 11em1 and a plurality of depressions 11em2. In the direction in which the cut line 11em extends, the curls 11em1 and the recesses 11em2 are alternately arranged. On the cut line 11em, a plurality of curls 11em1 are portions formed by cutting the half-etched lines. On the cutting line 11em, each recess 11em2 corresponds to a portion of each through hole.

再者,於脆弱線11RC1僅具備半蝕刻線之情況下,切斷痕11em係在幾乎整個缺口11e22上具有捲曲。此外,於脆弱線11RC1係由複數個貫通孔及位於貫通孔之間的片材的一部分形成之情況下,切斷痕具有沿缺口11e22交互地排列之捲曲及凹陷。Furthermore, in the case where the fragile line 11RC1 has only a half-etched line, the cutting line 11em has a curl on almost the entire notch 11e22. In addition, when the line of weakness 11RC1 is formed by a plurality of through holes and a part of the sheet located between the through holes, the cutting marks have curls and depressions alternately arranged along the notch 11e22.

如圖6所示,於各蒸鍍遮罩11M接合於遮罩框架21之後,於各蒸鍍遮罩11M中,自包含遮罩部11a的部分上將包含缺口11e22之部分切除。然後,將具備切除了包含缺口11e22之部分的蒸鍍遮罩11M之遮罩裝置20安裝於蒸鍍裝置。As shown in FIG. 6 , after each vapor deposition mask 11M is joined to the mask frame 21 , in each vapor deposition mask 11M, a portion including the notch 11e22 is cut from the portion including the mask portion 11a. Then, the mask device 20 including the vapor deposition mask 11M in which the portion including the notch 11e22 has been cut out is attached to the vapor deposition device.

[蒸鍍遮罩的製造方法] 蒸鍍遮罩的製造方法,包含自金屬製片材形成蒸鍍遮罩中間體10之過程、及自蒸鍍遮罩中間體10的帶狀部11形成蒸鍍遮罩11M之過程。[Manufacturing method of vapor deposition mask] The manufacturing method of the vapor deposition mask includes the process of forming the vapor deposition mask intermediate body 10 from the metal sheet, and the process of forming the vapor deposition mask 11M from the strip portion 11 of the vapor deposition mask intermediate body 10 .

如上述,於形成蒸鍍遮罩中間體10中形成的蒸鍍遮罩中間體10,具備帶狀部11、框狀部12及連結部13。帶狀部11具有:線狀之脆弱線11RC1,其連接於短邊11e2,且具有自該短邊11e2朝向另一短邊11e2之突狀;線段11e21,其被夾持於短邊11e2中之兩端;及切除區域11RC,其藉由脆弱線11RC1包圍,且包含線段11e21及脆弱線11RC1。蒸鍍遮罩中間體10係於切除區域11RC內具備貫通孔11RC2,該貫通孔11RC2連接於圍繞切除區域11RC之邊緣的一部分。As described above, the vapor deposition mask intermediate body 10 formed in the formation of the vapor deposition mask intermediate body 10 includes the belt-shaped portion 11 , the frame-shaped portion 12 , and the connection portion 13 . The belt portion 11 has: a linear fragile line 11RC1 connected to the short side 11e2 and having a protrusion from the short side 11e2 toward the other short side 11e2; a line segment 11e21, which is clamped between the short sides 11e2 both ends; and the cut-out region 11RC, which is surrounded by the line of weakness 11RC1 and includes the line segment 11e21 and the line of weakness 11RC1. The vapor deposition mask intermediate body 10 includes a through hole 11RC2 in the cutout region 11RC, and the through hole 11RC2 is connected to a part of the edge surrounding the cutout region 11RC.

根據此種之蒸鍍遮罩11M的製造方法,當形成蒸鍍遮罩中間體10時,與於整個切除區域11RC形成貫通孔11RC2的情況比較,於用於片材之蝕刻的阻劑遮罩中,可減小用以形成貫通孔11RC2之貫通孔的大小。藉此,於片材中,可減小自阻劑遮罩之貫通孔露出的區域,因此可減小片材中與蝕刻液接觸的區域。According to the manufacturing method of the vapor deposition mask 11M, when the vapor deposition mask intermediate body 10 is formed, compared with the case where the through-hole 11RC2 is formed in the entire cutout region 11RC, the resist mask for sheet etching Among them, the size of the through hole for forming the through hole 11RC2 can be reduced. Thereby, in the sheet, the area exposed from the through hole of the resist mask can be reduced, so the area in contact with the etching solution in the sheet can be reduced.

藉此,於片材的蝕刻中,可抑制蝕刻液在片材及阻劑遮罩之間環繞。此外,藉由減小與蝕刻液接觸的區域,片材的蝕刻量難以受蝕刻液的流速左右。因此,可提高對片材之圖案化之形狀的精度。As a result, in the etching of the sheet, the etchant can be suppressed from circulating between the sheet and the resist mask. In addition, by reducing the area in contact with the etching solution, the etching amount of the sheet is less likely to be affected by the flow rate of the etching solution. Therefore, the accuracy of the patterned shape of the sheet can be improved.

如以上說明,根據蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法的一實施形態,可獲得以下記載的功效。 (1)蝕刻液難以於阻劑遮罩與片材之間產生環繞,並且,藉由濕式蝕刻形成之蒸鍍遮罩中間體10的形狀難以受使用於濕式蝕刻之蝕刻液的流速左右。因此,可提高圖案加工之形狀的精度。As described above, according to one embodiment of the vapor deposition mask intermediate body, the vapor deposition mask, and the method for producing the vapor deposition mask, the following effects can be obtained. (1) It is difficult for the etching solution to form a circle between the resist mask and the sheet, and the shape of the vapor deposition mask intermediate 10 formed by wet etching is difficult to be affected by the flow rate of the etching solution used for wet etching. . Therefore, the precision of the shape of pattern processing can be improved.

(2)可以貫通孔11RC2作為起首,將短邊脆弱線13a與脆弱線11RC1兩者切斷。因此,與貫通孔11RC2不連接於線段11e21及脆弱線11RC1的情況比較,更容易將短邊脆弱線13a及脆弱線11RC1切斷。(2) Both the short-side fragile line 13a and the fragile line 11RC1 may be cut off at the beginning with the through hole 11RC2. Therefore, compared with the case where the through-hole 11RC2 is not connected to the line segment 11e21 and the weak line 11RC1, the short-side weak line 13a and the weak line 11RC1 are more easily cut.

(3)可藉由貫通孔11RC2將脆弱線11RC1中彎曲的部分隔斷。因此,與貫通孔11RC2沿短邊11e2延伸的情況比較,更容易將脆弱線11RC1切斷。(3) The bent portion of the fragile line 11RC1 can be cut off by the through hole 11RC2. Therefore, compared with the case where the through-hole 11RC2 extends along the short side 11e2, the fragile line 11RC1 can be cut more easily.

(4)由於切除區域11RC係藉由貫通孔11RC2二等分,因此與以具有偏差之方式藉由貫通孔11RC2將切除區域11RC二分割的情況比較,不易於為了去除藉由切除區域11RC之二分割所形成的各部分而需要的負載上產生偏差。因此,容易去除切除區域11RC。(4) Since the cutout region 11RC is divided into two parts by the through hole 11RC2, it is not easy to remove the cutout region 11RC by the second part of the cutout region 11RC compared with the case where the cutout region 11RC is divided into two parts with the through hole 11RC2. The load required to divide the formed parts varies. Therefore, the cutout region 11RC is easily removed.

(5)形成貫通孔11RC2之後的切除區域11RC係藉由框狀部12穩定地支撐。因此,於蒸鍍遮罩中間體10之搬送時,可抑制切除區域11RC被自框狀部12上切斷。(5) The cutout region 11RC after the through hole 11RC2 is formed is stably supported by the frame-shaped portion 12 . Therefore, when the vapor deposition mask intermediate body 10 is conveyed, the cutout region 11RC can be suppressed from being cut off from the frame-shaped portion 12 .

(6)由於貫通孔11RC2通過脆弱線11RC1與連結部13,因此可以貫通孔11RC2作為起首,將脆弱線11RC1與連結部13兩者切斷。因此,與貫通孔11RC2不通過脆弱線11RC1及連結部13的情況比較,更容易將脆弱線11RC1及連結部13切斷。(6) Since the through-hole 11RC2 passes through the fragile line 11RC1 and the connecting portion 13 , both the fragile line 11RC1 and the connecting portion 13 can be cut off from the through-hole 11RC2 at the beginning. Therefore, compared with the case where the through-hole 11RC2 does not pass through the fragile line 11RC1 and the connecting portion 13, the fragile line 11RC1 and the connecting portion 13 are more easily cut.

[變形例] 再者,前述實施形態可依如下方式變更且實施。 [貫通孔] ・也可於切除區域11RC內形成複數個貫通孔。即,帶狀部11也可具有複數個貫通孔11RC2。[Variation] In addition, the above-mentioned embodiment can be changed and implemented as follows. [Through Hole] ・A plurality of through holes may be formed in the cutout region 11RC. That is, the strip portion 11 may have a plurality of through holes 11RC2.

例如,如圖7所示,貫通孔11RC2也可具有2個貫通孔11RC2。於圖7所示之例子中,於第二虛擬線L2上連接有2個貫通孔11RC2,且藉由2個貫通孔11RC2形成V字。於此情況下也可獲得與前述(2)同樣的功效。再者,帶狀部11也可具有3個以上之貫通孔11RC2。For example, as shown in FIG. 7 , the through hole 11RC2 may have two through holes 11RC2. In the example shown in FIG. 7 , two through holes 11RC2 are connected to the second dummy line L2, and a V-shape is formed by the two through holes 11RC2. Also in this case, the same effect as the aforementioned (2) can be obtained. In addition, the strip portion 11 may have three or more through holes 11RC2.

・如圖8所示,帶狀部11也可具有沿寬度方向DW延伸且僅與脆弱線11RC1連接的貫通孔11RC2。即,帶狀部11也可具有僅連接於第二虛擬線L2的貫通孔11RC2。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。・As shown in FIG. 8 , the strip portion 11 may have a through hole 11RC2 extending in the width direction DW and connected only to the fragile line 11RC1. That is, the strip portion 11 may have the through hole 11RC2 connected only to the second dummy line L2. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the same effect as the aforementioned (1) can be obtained.

再者,於沿寬度方向DW延伸的貫通孔11RC2中,也可僅由任一之端部連接於脆弱線11RC1即第二虛擬線L2,也可兩者之端部不連接於脆弱線11RC1即第二虛擬線L2。於任一之情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。Furthermore, in the through-hole 11RC2 extending in the width direction DW, only one end portion may be connected to the fragile line 11RC1, that is, the second dummy line L2, or both ends may not be connected to the fragile line 11RC1, that is, the second dummy line L2. The second virtual line L2. In either case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the same effect as the aforementioned (1) can be obtained.

・如圖9所示,貫通孔11RC2除了具備沿長度方向DL延伸的部分外,還可具備沿寬度方向DW延伸的部分。即,貫通孔11RC2也可具有十字形。於此情況下,貫通孔11RC2係於3個部位連接於脆弱線11RC1。換言之,貫通孔11RC2係於第二虛擬線L2上的3個部位連接於第二虛擬線L2。因此,與貫通孔11RC2僅於第二虛擬線L2上的一個部位連接於第二虛擬線L2的情況比較,更容易將脆弱線11RC1切斷。・As shown in FIG. 9 , the through hole 11RC2 may have a portion extending in the width direction DW in addition to the portion extending in the longitudinal direction DL. That is, the through hole 11RC2 may have a cross shape. In this case, the through-hole 11RC2 is connected to the fragile line 11RC1 at three locations. In other words, three parts of the through hole 11RC2 on the second dummy line L2 are connected to the second dummy line L2. Therefore, compared with the case where the through-hole 11RC2 is connected to the second dummy line L2 only at one location on the second dummy line L2, the fragile line 11RC1 can be cut more easily.

再者,於具有十字形的貫通孔11RC2中,4個端部中的一個以上,也可不與圍繞切除區域11RC的邊緣連接。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。In addition, in the through-hole 11RC2 having a cross shape, one or more of the four ends may not be connected to the edge surrounding the cutout region 11RC. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the same effect as the aforementioned (1) can be obtained.

・圖9所示之貫通孔11RC2,也可變更為具有T字形的貫通孔。即,貫通孔11RC2也可具有連接於線段11e21上之一個部位及連接於脆弱線11RC1上的2個部位之T字形。換言之,貫通孔也可具有連接於第一虛擬線L1上之一個部位及連接於第二虛擬線L2上的2個部位之T字形。或者,貫通孔也可具有連接於脆弱線11RC1上之3個部位之T字形。換言之,貫通孔也可具有連接於第二虛擬線L2上之3個部位之T字形。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。・The through hole 11RC2 shown in FIG. 9 can also be changed to a T-shaped through hole. That is, the through-hole 11RC2 may have a T-shape in which one part is connected to the line segment 11e21 and two parts are connected to the fragile line 11RC1. In other words, the through hole may have a T-shape in which one part is connected to the first dummy line L1 and two parts are connected to the second dummy line L2. Alternatively, the through hole may have a T-shape connected to three places on the fragile line 11RC1. In other words, the through hole may have a T-shape connected to three locations on the second dummy line L2. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the same effect as the aforementioned (1) can be obtained.

・如圖10所示,貫通孔11RC2也可具有菱形形狀。貫通孔11RC2連接於線段11e21上的一個部位及脆弱線11RC1上的3個部位。換言之,貫通孔11RC2連接於第一虛擬線L1上的一個部位及第二虛擬線L2上的3個部位。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。再者,於具有菱形之貫通孔11RC2中,4個角部中的一個以上也可不與圍繞切除區域11RC的邊緣連接。於此情況下,也可獲得與前述(1)同樣的功效。・As shown in FIG. 10 , the through hole 11RC2 may have a rhombus shape. The through hole 11RC2 is connected to one site on the line segment 11e21 and three sites on the line of weakness 11RC1. In other words, the through hole 11RC2 is connected to one location on the first dummy line L1 and three locations on the second dummy line L2. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the same effect as the aforementioned (1) can be obtained. Furthermore, in the through-hole 11RC2 having a diamond shape, one or more of the four corners may not be connected to the edge surrounding the cutout region 11RC. Even in this case, the same effect as the aforementioned (1) can be obtained.

・貫通孔11RC2也可位於切除區域11RC內,且不與切除區域11RC的邊緣連接。於此情況下,由於帶狀部11於切除區域11RC內具有貫通孔11RC2,因此可獲得與前述(1)同樣的功效。惟,藉由將貫通孔11RC2連接於切除區域11RC的邊緣,容易將圍繞切除區域11RC的短邊脆弱線13a及脆弱線11RC1切斷。再者,貫通孔11RC2可具有任意之形狀,例如,可具有三角形及四邊形等多邊形形狀、及圓形等。・The through hole 11RC2 may be located in the cutout region 11RC and not connected to the edge of the cutout region 11RC. In this case, since the strip portion 11 has the through hole 11RC2 in the cutout region 11RC, the same effect as the above (1) can be obtained. However, by connecting the through-hole 11RC2 to the edge of the cut-out region 11RC, the short-side weak line 13a and the weak line 11RC1 surrounding the cut-out region 11RC can be easily cut. In addition, the through-hole 11RC2 may have an arbitrary shape, for example, a polygonal shape, such as a triangle and a quadrangle, a circle, etc. may be sufficient.

[連結部] 如圖11所示,連結部13也可具備短邊脆弱線13a及橋接部13b。於蒸鍍遮罩中間體10中,周邊部11b及框狀部12具有第一板厚。複數個橋接部13b位於沿帶狀部11的邊緣11e隔開間隔之位置,各橋接部13b具有第一板厚。沿帶狀部11之邊緣11e中之連結部13連接的部分以外的部分配置有縫隙10S。由於沿帶狀部11之邊緣11e中之連結部13連接的部分以外的部分配置縫隙10S,因此容易進行將橋接部13b切斷的作業。[connection part] As shown in FIG. 11 , the connection portion 13 may include a short-side weak line 13a and a bridge portion 13b. In the vapor deposition mask intermediate body 10, the peripheral portion 11b and the frame-shaped portion 12 have the first plate thickness. The plurality of bridging portions 13b are located at spaced positions along the edge 11e of the strip portion 11, and each of the bridging portions 13b has a first plate thickness. Slots 10S are arranged along portions of the edge 11 e of the band-shaped portion 11 other than the portion where the connecting portion 13 is connected. Since the slit 10S is arranged along the portion other than the portion connected by the connecting portion 13 in the edge 11e of the band-shaped portion 11, the work of cutting the bridge portion 13b can be easily performed.

10:蒸鍍遮罩中間體 10F:表面 10R:背面 10S:縫隙 11:帶狀部 11a:遮罩部 11b:周邊部 11e:邊緣 11e1:長邊 11e2:短邊 11e21:線段 11h:遮罩孔 11hL:大孔 11hS:小孔 11RC:切除區域 11RC1:脆弱線 11RC2:貫通孔 11M:蒸鍍遮罩 11F:表面 11R:背面 11e22:缺口 11em:切斷痕 11em1:捲曲 11em2:凹陷 12:框狀部 13:連結部 13a:短邊脆弱線 DL:長度方向 DW:寬度方向 L1:第一虛擬線 L2:第二虛擬線 RC21:第一端部 RC22:第二端部 20:遮罩裝置 21:遮罩框架10: Evaporation mask intermediate 10F: Surface 10R: Back 10S: Gap 11: Ribbon 11a: Mask part 11b: Peripheral Department 11e: Edge 11e1: long edge 11e2: Short side 11e21: Line segment 11h: Mask hole 11hL: large hole 11hS: Small hole 11RC: Resection area 11RC1: Fragile Line 11RC2: Through hole 11M: Evaporation mask 11F: Surface 11R: Back 11e22: Notch 11em: cut marks 11em1: Curl 11em2: Sag 12: Frame part 13: Links 13a: Short edge fragile line DL: length direction DW: width direction L1: first virtual line L2: Second virtual line RC21: First end RC22: Second end 20: Masking device 21: Mask Frame

圖1為顯示一實施形態之蒸鍍遮罩中間體的構造的俯視圖。 圖2為顯示圖1所示之帶狀部的遮罩部中之構造的剖視圖。 圖3為顯示圖1所示之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖4為顯示將自圖1所示之蒸鍍遮罩中間體獲得的蒸鍍遮罩接合於遮罩框架上之狀態的俯視圖。 圖5為放大顯示圖4所示之區域A的俯視圖。 圖6為顯示將圖4所示之蒸鍍遮罩的一部分切斷之狀態的俯視圖。 圖7為顯示第一變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖8為顯示第二變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖9為顯示第三變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖10為顯示第四變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖11為顯示第五變形例之蒸鍍遮罩中間體的構造之俯視圖。FIG. 1 is a plan view showing the structure of a vapor deposition mask intermediate body according to an embodiment. FIG. 2 is a cross-sectional view showing a structure in a mask portion of the belt-shaped portion shown in FIG. 1 . FIG. 3 is a plan view showing a cutout area and a peripheral structure of the cutout area in the vapor deposition mask intermediate body shown in FIG. 1 . FIG. 4 is a plan view showing a state where the vapor deposition mask obtained from the vapor deposition mask intermediate shown in FIG. 1 is bonded to a mask frame. FIG. 5 is an enlarged plan view showing the area A shown in FIG. 4 . FIG. 6 is a plan view showing a state where a part of the vapor deposition mask shown in FIG. 4 is cut. 7 is a plan view showing a cut-out region and a peripheral structure of the cut-out region in the vapor deposition mask intermediate body of the first modification. 8 is a plan view showing a cutout region and a peripheral structure of the cutout region in the vapor deposition mask intermediate body of the second modification. 9 is a plan view showing a cutout region and a peripheral structure of the cutout region in the vapor deposition mask intermediate body of the third modification. 10 is a plan view showing a cutout region and a peripheral structure of the cutout region in the vapor deposition mask intermediate body of the fourth modification. 11 is a plan view showing the structure of a vapor deposition mask intermediate body of a fifth modification.

11:帶狀部 11: Ribbon

11e2:短邊 11e2: Short side

11e21:線段 11e21: Line segment

11RC:切除區域 11RC: Resection area

11RC1:脆弱線 11RC1: Fragile Line

11RC2:貫通孔 11RC2: Through hole

12:框狀部 12: Frame part

13:連結部 13: Links

13a:短邊脆弱線 13a: Short edge fragile line

DL:長度方向 DL: length direction

DW:寬度方向 DW: width direction

L1:第一虛擬線 L1: first virtual line

L2:第二虛擬線 L2: Second virtual line

RC21:第一端部 RC21: First end

RC22:第二端部 RC22: Second end

Claims (8)

一種蒸鍍遮罩中間體,係由金屬製片材形成,其具備:帶狀部,其包含具有第一、第二長邊及第一、第二短邊之邊緣、及具有複數個遮罩孔之遮罩部;框狀部,其圍繞前述帶狀部;及連結部,其位於前述帶狀部與前述框狀部之間,且將前述帶狀部中的至少前述第一短邊連結於前述框狀部,前述帶狀部具備脆弱線、線段及切除區域,前述脆弱線之兩端連接於前述第一短邊,前述脆弱線具有具自前述第一短邊朝向前述第二短邊的突狀之線狀,前述線段係被夾持於前述第一短邊中之前述脆弱線兩端的部分,前述切除區域,係藉由前述線段及前述脆弱線包圍,且包含前述線段及前述脆弱線,前述蒸鍍遮罩中間體,係於前述切除區域內具有貫通孔,該貫通孔連接於圍繞前述切除區域之邊緣的一部分。A vapor deposition mask intermediate body, which is formed of a metal sheet, and is provided with: a strip portion, which includes an edge with first and second long sides and first and second short sides, and has a plurality of masks A hole shielding part; a frame-shaped part surrounding the strip-shaped part; and a connecting part located between the strip-shaped part and the frame-shaped part, and connecting at least the first short side of the strip-shaped part In the frame-shaped portion, the band-shaped portion includes a line of weakness, a line segment and a cut-out area, both ends of the line of weakness are connected to the first short side, and the line of weakness has a direction from the first short side to the second short side. The protruding linear shape, the line segment is sandwiched between the two ends of the fragile line in the first short side, and the cutout area is surrounded by the line segment and the fragile line, and includes the line segment and the fragile line. The wire, the vapor deposition mask intermediate body, has a through hole in the cutout area, and the through hole is connected to a part of the edge surrounding the cutout area. 如請求項1之蒸鍍遮罩中間體,其中前述貫通孔具有第一端部及第二端部,且具有自前述第一端部朝前述第二端部延伸的形狀,前述第一端部連接於前述線段,前述第二端部連接於前述脆弱線。The vapor deposition mask intermediate body of claim 1, wherein the through hole has a first end and a second end, and has a shape extending from the first end toward the second end, and the first end Connected to the line segment, the second end is connected to the frangible line. 如請求項2之蒸鍍遮罩中間體,其中前述脆弱線具有大致U字形,前述貫通孔具有沿前述長邊延伸的帶狀。The vapor deposition mask intermediate body of claim 2, wherein the line of weakness has a substantially U-shape, and the through hole has a strip shape extending along the long side. 如請求項3之蒸鍍遮罩中間體,其中前述第一端部係於前述第一短邊延伸之方向上將前述線段的長度二等分,前述第二端部係將前述脆弱線的長度二等分。The vapor deposition mask intermediate body according to claim 3, wherein the first end portion bisects the length of the line segment in the extending direction of the first short side, and the second end portion is the length of the line of weakness. Divide. 如請求項4之蒸鍍遮罩中間體,其中於前述第一短邊延伸的方向上,前述第一端部之長度與前述第二端部的長度的總和係第一長度,前述線段之長度與前述脆弱線的長度的總和係第二長度,前述第二長度係較前述第一長度長。The vapor deposition mask intermediate according to claim 4, wherein in the extending direction of the first short side, the sum of the length of the first end portion and the length of the second end portion is the first length, and the length of the line segment is the first length. The sum of the length of the line of weakness and the length of the line of weakness is a second length, and the second length is longer than the first length. 如請求項1之蒸鍍遮罩中間體,其中前述貫通孔具有連結前述切除區域中之最靠近前述第二短邊的位置與前述框狀部中之與前述第一短邊對向的位置之帶狀。The vapor deposition mask intermediate body according to claim 1, wherein the through hole has a connection between a position in the cutout region closest to the second short side and a position in the frame portion opposite to the first short side ribbon. 一種蒸鍍遮罩,係具有帶狀的蒸鍍遮罩,其具備:邊緣,其具有一對長邊及一對短邊;及遮罩部,其具有複數個遮罩孔,各短邊包含缺口,該缺口具有朝另一前述短邊凹陷的U字形,前述缺口係於前述U字之彎曲部即底部的至少一部分具有切斷痕。An evaporation mask is provided with a strip-shaped evaporation mask, which is provided with: an edge, which has a pair of long sides and a pair of short sides; and a mask part, which has a plurality of mask holes, and each short side includes The notch has a U-shape concave toward the other short side, and the notch has a cutting mark at at least a part of the bent portion of the U-shape, that is, the bottom portion. 一種蒸鍍遮罩的製造方法,其包含以下過程:自金屬製片材形成蒸鍍遮罩中間體,該蒸鍍遮罩中間體具有帶狀部、框狀部及連結部,該帶狀部包含具有第一、第二長邊及第一、第二短邊之邊緣、及具有複數個遮罩孔之遮罩部,該框狀部係圍繞前述帶狀部,該連結部係位於前述帶狀部與前述框狀部之間,且將前述帶狀部中的至少前述第一短邊連結於前述框狀部;及自前述帶狀部形成蒸鍍遮罩,前述帶狀部具備脆弱線、線段及切除區域,前述脆弱線之兩端連接於前述第一短邊,前述脆弱線具有具自前述第一短邊朝向前述第二短邊的突狀之線狀,前述線段係被夾持於前述第一短邊中之前述脆弱線兩端的部分,前述切除區域,係藉由前述線段及前述脆弱線包圍,且包含前述線段及前述脆弱線,前述蒸鍍遮罩中間體,係於前述切除區域內具有貫通孔,該貫通孔連接於圍繞前述切除區域之邊緣的一部分。A method for manufacturing an evaporation mask, comprising the following steps: forming an evaporation mask intermediate body from a metal sheet, the evaporation mask intermediate body having a band-shaped part, a frame-shaped part and a connecting part, the band-shaped part It includes an edge with first and second long sides and first and second short sides, and a shielding portion with a plurality of shielding holes, the frame-like portion surrounds the belt-like portion, and the connecting portion is located on the belt. between the strip-shaped part and the frame-shaped part, and at least the first short side of the strip-shaped part is connected to the frame-shaped part; and a vapor deposition mask is formed from the strip-shaped part, and the strip-shaped part is provided with a line of weakness , a line segment and a cut area, the two ends of the line of weakness are connected to the first short side, the line of weakness has a linear shape with a protrusion from the first short side toward the second short side, and the line segment is clamped The portion at both ends of the line of weakness in the first short side, the cutout area, is surrounded by the line segment and the line of weakness, and includes the line segment and the line of weakness, and the vapor deposition mask intermediate is attached to the aforesaid A through hole is formed in the cut-out area, and the through-hole is connected to a part of the edge surrounding the cut-out area.
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