TW202210645A - Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask - Google Patents
Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask Download PDFInfo
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 description 37
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000002093 peripheral effect Effects 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910000531 Co alloy Inorganic materials 0.000 description 5
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 238000002271 resection Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/18—Means for removing cut-out material or waste
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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Abstract
Description
本發明係關於一種蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法。The present invention relates to an evaporation mask intermediate body, an evaporation mask and a manufacturing method of the evaporation mask.
為了形成有機EL裝置具有之顯示元件,採用真空蒸鍍。於真空蒸鍍中,為了形成具有顯示元件所需之既定形狀的層而使用蒸鍍遮罩。蒸鍍遮罩具有藉由金屬製片材形成的帶狀。蒸鍍遮罩具有一對短邊,於使用蒸鍍遮罩之前,各短邊具有缺口,該缺口具有朝另一短邊凹陷之形狀。於使用蒸鍍遮罩時,蒸鍍遮罩係於將各短邊朝遠離與該短邊不同之短邊的方向拉伸的狀態下被安裝於遮罩框架(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻]In order to form a display element included in an organic EL device, vacuum deposition is used. In vacuum evaporation, an evaporation mask is used to form a layer having a predetermined shape required for a display element. The vapor deposition mask has a belt shape formed of a metal sheet. The vapor deposition mask has a pair of short sides. Before the vapor deposition mask is used, each short side has a notch, and the notch has a shape recessed toward the other short side. When a vapor deposition mask is used, the vapor deposition mask is attached to a mask frame in a state where each short side is stretched in a direction away from a short side different from the short side (for example, see Patent Document 1). [Prior Art Literature] [Patent Literature]
[專利文獻1]國際公開第2020/050398號[Patent Document 1] International Publication No. 2020/050398
[發明欲解決之課題][The problem to be solved by the invention]
然而,蒸鍍遮罩係藉由對金屬製片材進行濕式蝕刻而形成。此時,於用以製造蒸鍍遮罩之金屬製的片材中,在與蒸鍍遮罩之缺口對應的部分形成有貫通孔。與缺口對應之貫通孔係較形成於蒸鍍遮罩上之其他貫通孔的面積大。因此,由於金屬製片材中與缺口對應的部分接觸更多的蝕刻液,因此蝕刻液容易於金屬製片材與形成於片材上之阻劑遮罩之間產生環繞、或者蝕刻處理容易受蝕刻液之流速左右。其結果,在與蒸鍍遮罩之缺口對應的部分中,圖案化之形狀的精度容易降低。However, vapor deposition masks are formed by wet etching a metal sheet. At this time, in the metal sheet for manufacturing the vapor deposition mask, a through hole is formed in a portion corresponding to the notch of the vapor deposition mask. The area of the through hole corresponding to the notch is larger than that of the other through holes formed on the vapor deposition mask. Therefore, since the portion of the metal sheet corresponding to the notch is in contact with more etching solution, the etching solution is likely to be surrounded between the metal sheet and the resist mask formed on the sheet, or the etching process is easily affected. The flow rate of the etching solution is about. As a result, in the portion corresponding to the notch of the vapor deposition mask, the accuracy of the patterned shape tends to decrease.
本發明之目的,在於提供一種可提高圖案加工之形狀的精度之蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法。 [用以解決課題之手段]An object of the present invention is to provide a vapor deposition mask intermediate body, a vapor deposition mask, and a manufacturing method of the vapor deposition mask that can improve the accuracy of the shape of pattern processing. [means to solve the problem]
於本發明之一態樣中,提供一種蒸鍍遮罩中間體。蒸鍍遮罩中間體係由金屬製片材形成。其具備:帶狀部,其包含具有第一、第二長邊及第一、第二短邊之邊緣、及具有複數個遮罩孔之遮罩部;框狀部,其圍繞前述帶狀部;及連結部,其位於前述帶狀部與前述框狀部之間,且將前述帶狀部中的至少前述短邊連結於前述框狀部。前述帶狀部具備脆弱線、線段及切除區域。前述脆弱線之兩端連接於前述第一短邊,前述脆弱線具有自前述第一短邊朝向前述第二短邊的突狀。前述線段係被夾持於前述第一短邊中之前述脆弱線兩端的部分。前述切除區域係藉由前述線段及前述脆弱線包圍,且包含前述線段及前述脆弱線。前述蒸鍍遮罩中間體係於前述切除區域內具有貫通孔,該貫通孔連接於圍繞前述切除區域之邊緣的一部分。In one aspect of the present invention, an evaporation mask intermediate is provided. The vapor deposition mask intermediate system is formed from sheet metal. It has: a belt-shaped part, which includes edges with first and second long sides and first and second short sides, and a mask part with a plurality of mask holes; a frame-shaped part, which surrounds the belt-shaped part and a connecting portion, which is located between the strip-shaped portion and the frame-shaped portion, and connects at least the short sides of the strip-shaped portion to the frame-shaped portion. The band-shaped portion includes a line of weakness, a line segment, and a cut-out region. Both ends of the line of weakness are connected to the first short side, and the line of weakness has a protruding shape from the first short side toward the second short side. The line segment is sandwiched between the two ends of the line of weakness in the first short side. The cutout area is surrounded by the line segment and the line of weakness, and includes the line segment and the line of weakness. The vapor deposition mask intermediate system has a through hole in the cutout area, and the through hole is connected to a part of the edge surrounding the cutout area.
於本發明之另一態樣中,提供一種蒸鍍遮罩。蒸鍍遮罩具有帶狀。蒸鍍遮罩具備:邊緣,其具有一對長邊及一對短邊;及遮罩部,其具有複數個遮罩孔。各短邊包含缺口,該缺口具有朝另一前述短邊凹陷的U字形。前述缺口係於前述U字之彎曲部即底部的至少一部分具有切斷痕。In another aspect of the present invention, an evaporation mask is provided. The vapor deposition mask has a strip shape. The vapor deposition mask includes an edge having a pair of long sides and a pair of short sides, and a mask portion having a plurality of mask holes. Each of the short sides includes a notch, and the notch has a U-shape recessed toward the other short side. The said notch has a cutting mark in at least a part of the bottom part which is the bent part of the said U-shape.
於本發明之另一態樣中,提供一種蒸鍍遮罩的製造方法。蒸鍍遮罩的製造方法係具備:自金屬製片材形成蒸鍍遮罩中間體,其中,該蒸鍍遮罩中間體具有帶狀部、框狀部及連結部,該帶狀部包含具有第一、第二長邊及第一、第二短邊之邊緣、及具有複數個遮罩孔之遮罩部,該框狀部係圍繞前述帶狀部,該連結部係位於前述帶狀部與前述框狀部之間,且將前述帶狀部中的至少前述短邊連結於前述框狀部;及自前述帶狀部形成蒸鍍遮罩。前述帶狀部具備脆弱線、線段及切除區域。前述脆弱部之兩端連接於前述第一短邊,且具有自前述第一短邊朝向前述第二短邊的突狀。前述線段係被夾持於前述第一短邊中之前述脆弱線兩端的部分。前述切除區域係藉由前述線段及前述脆弱線包圍,且包含前述線段及前述脆弱線。前述蒸鍍遮罩中間體係於前述切除區域內具有貫通孔,該貫通孔連接於圍繞前述切除區域之邊緣的一部分。In another aspect of the present invention, a method for manufacturing an evaporation mask is provided. The manufacturing method of a vapor deposition mask includes: forming a vapor deposition mask intermediate body from a metal sheet, wherein the vapor deposition mask intermediate body has a belt-shaped part, a frame-shaped part, and a connecting part, and the belt-shaped part includes a Edges of the first and second long sides and the first and second short sides, and a shielding portion having a plurality of shielding holes, the frame-shaped portion surrounds the belt-shaped portion, and the connecting portion is located on the belt-shaped portion Between the frame-shaped part and the strip-shaped part, at least the short side of the strip-shaped part is connected to the frame-shaped part; and a vapor deposition mask is formed from the strip-shaped part. The band-shaped portion includes a line of weakness, a line segment, and a cut-out region. Both ends of the fragile portion are connected to the first short side, and have a protruding shape from the first short side toward the second short side. The line segment is sandwiched between the two ends of the line of weakness in the first short side. The cutout area is surrounded by the line segment and the line of weakness, and includes the line segment and the line of weakness. The vapor deposition mask intermediate system has a through hole in the cutout area, and the through hole is connected to a part of the edge surrounding the cutout area.
[用以實施發明的形態][Form for carrying out the invention]
參照圖1至圖6,對蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法之一實施形態進行說明。以下,依序對蒸鍍遮罩中間體、遮罩裝置及蒸鍍遮罩的製造方法進行說明。1 to 6 , one embodiment of a vapor deposition mask intermediate body, a vapor deposition mask, and a method for manufacturing the vapor deposition mask will be described. Hereinafter, the vapor deposition mask intermediate body, the mask device, and the manufacturing method of the vapor deposition mask will be sequentially described.
[蒸鍍遮罩中間體]
參照圖1至圖3,對蒸鍍遮罩中間體進行說明。
圖1所示之蒸鍍遮罩中間體10係由金屬製的片材形成。金屬片,例如由鐵鎳系合金或鐵鎳鈷系合金形成。鐵鎳系合金,例如為含有30質量%以上之鎳的鐵鎳系合金。於鐵鎳合金中,又以36質量%之鎳與剩餘量之鐵的合金為主成分的合金,即恆範鋼為較佳。於36質量%之鎳與剩餘量之鐵的合金為金屬板的主成分之情況下,金屬板之剩餘部分可能包含例如鉻、錳、碳、及鈷等的添加物。[Vapor deposition mask intermediate]
1 to 3 , the vapor deposition mask intermediate body will be described.
The vapor deposition mask
此外,鐵鎳鈷系合金之熱膨脹係數小於鐵鎳系合金之熱膨脹係數。鐵鎳鈷系合金,例如為含有30質量%以上之鎳及3質量%以上的鈷之鐵鎳鈷系合金。於鐵鎳鈷系合金中,又以32質量%之鎳、4質量%以上且5質量%以下的鈷及剩餘量之鐵的合金為主成分之合金即超級恆範鋼為較佳。於32質量%之鎳、4質量%以上且5質量%以下的鈷及剩餘量之鐵的合金為金屬板之主成分之情況下,金屬板之剩餘部分可能包含例如鉻、錳、及碳等之添加物。In addition, the thermal expansion coefficient of the iron-nickel-cobalt-based alloy is smaller than that of the iron-nickel-based alloy. The iron-nickel-cobalt-based alloy is, for example, an iron-nickel-cobalt-based alloy containing 30 mass % or more of nickel and 3 mass % or more of cobalt. Among the iron-nickel-cobalt-based alloys, an alloy mainly composed of an alloy of 32 mass % nickel, 4 mass % or more and 5 mass % or less cobalt, and the remaining amount of iron, that is, super constant steel is preferable. When an alloy of 32 mass % nickel, 4 mass % or more and 5 mass % or less cobalt, and the remaining amount of iron are the main components of the metal plate, the remainder of the metal plate may contain, for example, chromium, manganese, and carbon, etc. of additives.
蒸鍍遮罩中間體10,具備帶狀部11、框狀部12及連結部13。帶狀部11包含邊緣11e及遮罩部11a。邊緣11e具有一對長邊11e1及一對短邊11e2。即,邊緣11e具有第一、第二長邊11e1及第一、第二短邊11e2。長邊11e1延伸的方向係長度方向DL,短邊11e2延伸的方向係寬度方向DW。長度方向DL及寬度方向DW係相互正交的方向。遮罩部11a具備複數個遮罩孔11h。各遮罩孔11h係用以藉由使蒸鍍材料通過各遮罩孔11h而對成膜對象形成既定圖案的孔。框狀部12係圍繞帶狀部11。連結部13位於帶狀部11與框狀部12之間,且將帶狀部11之至少短邊11e2連結於框狀部12。連結部13除了短邊11e2外,還將長邊11e1的一部分連結於框狀部12。蒸鍍遮罩中間體10具有表面10F及背面10R,背面10R係與表面10F為相反側的面。The vapor deposition mask
帶狀部11具備複數個遮罩部11a及周邊部11b。複數個遮罩部11a沿長度方向DL隔著間隔排列。各遮罩部11a例如具有長方形形狀。各遮罩部11a具有複數個遮罩孔11h。於各遮罩部11a中,複數個遮罩孔11h係依照既定規則排列。周邊部11b具有圍繞各遮罩部11a的形狀。由於本實施形態之帶狀部11具有沿長度方向DL排列的複數個遮罩部11a,因此周邊部11b具有階梯狀。周邊部11b不具有遮罩孔11h。The belt-
於蒸鍍遮罩中間體10中,帶狀部11的周邊部11b及框狀部12具有第一板厚。第一板厚例如為15μm以上且30μm以下。再者,帶狀部11的遮罩部11a可具有第一板厚,也可具有較第一板厚薄的第二板厚。再者,於遮罩部11a具有第二板厚之情況下,於形成在遮罩部11a之複數個遮罩孔11h中,相互鄰接的遮罩孔11h相連。藉此,遮罩部11a具有第二板厚。In the vapor deposition mask
於圖1所示之例子中,於寬度方向DW上隔開間隔地排列2個帶狀部11。再者,於蒸鍍遮罩中間體10中,也可於寬度方向DW上僅配置一個帶狀部11,或者也可排列3個以上。於長度方向DL上,排列於寬度方向DW的2個帶狀部11係隔開間隔配置。In the example shown in FIG. 1, two strip-shaped
自與蒸鍍遮罩中間體10之表面10F對向的視點觀察,框狀部12具有圍繞帶狀部11的形狀。框狀部12具有個別地圍繞各帶狀部11的形狀。The frame-shaped
連結部13及縫隙10S係位於帶狀部11與框狀部12的邊界上。縫隙10S係於蒸鍍遮罩中間體10的厚度方向上貫通蒸鍍遮罩中間體10。縫隙10S係於帶狀部11與框狀部12之邊界中相對於遮罩部11a位於寬度方向DW上。複數個遮罩部11a係於寬度方向DW上被一對縫隙10S夾持。The
連結部13係於帶狀部11與框狀部12之邊界中位於除了縫隙10S所在的部分以外之部分的整體上。連結部13可為例如半蝕刻線。連結部13也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分而形成。或者,連結部13也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分而形成。The
於連結部13具備複數個半蝕刻部或複數個貫通孔之情況下,例如,半蝕刻部或貫通孔的長度,可為90μm以上且180μm以下,寬度可為60μm以上且90μm以下,且配置其等的間距可為180μm以上且270μm以下。再者,半蝕刻部或貫通孔的長度係沿連結部13延伸之方向的大小,寬度係沿與連結部13延伸之方向正交的方向的大小。再者,半蝕刻部之深度,例如可為第一板厚的50%以上且80%以下。When the connecting
或者,連結部13也可藉由半蝕刻線、及於半蝕刻線上隔開間隔地排列的複數個貫通孔而形成。於此情況下,半蝕刻線之寬度,例如可為100μm以上且150μm以下。半蝕刻線之深度,例如可為第一板厚的50%以上且80%以下。位於半蝕刻線上之貫通孔的直徑,例如可為相對於半蝕刻線之寬度的50%以上且80%以下。於半蝕刻線上配置貫通孔的間距,例如可為100μm以上且500μm以下。Alternatively, the
再者,半蝕刻線及半蝕刻部係於厚度方向上蝕刻金屬製片材中的一部分的部分。連結部13係機械強度低於帶狀部11及框狀部12的部分。Furthermore, the half-etched line and the half-etched portion are portions that etch a part of the metal sheet in the thickness direction. The
圖2顯示與表面10F正交且沿朝寬度方向DW延伸之平面的遮罩部11a之剖面構造。
如圖2所示,形成於遮罩部11a之各遮罩孔11h,具有大孔11hL及小孔11hS。大孔11hL開口於蒸鍍遮罩中間體10的表面10F。另一方面,小孔11hS開口於蒸鍍遮罩中間體10的背面10R。自與表面10F對向的視點觀察,位於表面10F之大孔11hL的開口大於位於背面10R之小孔11hS的開口。於蒸鍍遮罩中間體10之厚度方向上的中間,一個大孔11hL連接於一個小孔11hS。FIG. 2 shows a cross-sectional structure of the
遮罩部11a具有之複數個遮罩孔11h係藉由前述片材的濕式蝕刻而形成。於片材之濕式蝕刻中,首先,藉由自片材的背面朝向表面之片材的蝕刻,形成複數個小孔11hS。用以形成小孔11hS的蝕刻步驟係第一蝕刻步驟。接著,藉由自片材之表面朝向背面之片材的蝕刻,形成一個一個地連接於各小孔11hS的大孔11hL。用以形成大孔11hL的蝕刻步驟係第二蝕刻步驟。The plurality of
自與蒸鍍遮罩中間體10之表面10F對向的視點觀察,於各遮罩部11a上以可製造例如具有300ppi以上且1000ppi以下之解像度的顯示裝置之方式形成有具有既定大小及排列的複數個遮罩孔11h。Viewed from a viewpoint opposite to the
圖3一併顯示帶狀部11中之包含一個短邊11e2的部分、及位於該短邊11e2周圍之框狀部12的一部分。再者,於帶狀部11中,包含一短邊11e2之部分與包含另一短邊11e2的部分係在長度方向DL上的位置彼此不同,另一方面,自與帶狀部11展開之平面對向的俯視視點下的構造相同。FIG. 3 shows a portion of the
如圖3所示,帶狀部11具備線狀之脆弱線11RC1及切除區域11RC。脆弱線11RC1的兩端連接於短邊11e2,脆弱線11RC1具有自該短邊11e2朝向另一短邊11e2的突狀。即,脆弱線11RC1具有自第一短邊11e2朝向第二短邊11e2的突狀。切除區域11RC係藉由短邊11e2中之被夾持於脆弱線11RC1兩端之線段11e21及脆弱線11RC1包圍,且包含線段11e21及脆弱線11RC1。蒸鍍遮罩中間體10具備貫通孔11RC2。貫通孔11RC2係於切除區域11RC內連接於包圍切除區域11RC之邊緣的一部分。於本實施形態中,由於線段11e21與脆弱線11RC1兩者係藉由貫通孔11RC2隔斷,因此切除區域11RC係藉由以線段11e21及脆弱線11RC1形成的開環之邊緣包圍。As shown in FIG. 3 , the band-shaped
於藉由濕式蝕刻對金屬製的片材進行圖案化而製造蒸鍍遮罩中間體10時,由於僅在切除區域11RC的一部分形成貫通孔11RC2,因此與藉由濕式蝕刻將所有切除區域11RC貫通之情況比較,金屬製的片材中露出於蝕刻液的面積小。因此,蝕刻液難以於阻劑遮罩與片材之間產生環繞,並且藉由濕式蝕刻所形成之蒸鍍遮罩中間體10的形狀,難以受到用於濕式蝕刻之蝕刻液的流速左右。因此,可抑制如藉由濕式蝕刻去除整個切除區域11RC般的情況那樣因濕式蝕刻所致的齒痕。其結果,可提高圖案化之形狀的精度。When a metal sheet is patterned by wet etching to manufacture the vapor deposition mask intermediate 10, since the through-hole 11RC2 is formed only in a part of the cutout region 11RC, it is different from that of the entire cutout region by wet etching. Compared with the case of 11RC penetration, the area exposed to the etching solution in the metal sheet is small. Therefore, it is difficult for the etching solution to form a circle between the resist mask and the sheet, and the shape of the vapor deposition mask intermediate 10 formed by wet etching is difficult to be affected by the flow rate of the etching solution used for wet etching. . Therefore, it is possible to suppress tooth marks caused by wet etching as in the case where the entire cutout region 11RC is removed by wet etching. As a result, the accuracy of the patterned shape can be improved.
再者,如上述,由於切除區域11RC係藉由連結部13之一部分及脆弱線11RC1包圍,因此藉由將連結部13及脆弱線11RC1切斷,可相對於各短邊11e2形成自該短邊11e2朝另一短邊11e2凹陷的缺口。Furthermore, as described above, since the cutout region 11RC is surrounded by a part of the connecting
也可於蒸鍍遮罩中間體10設定第一虛擬線L1及第二虛擬線L2。第一虛擬線L1係沿各短邊11e2之中央部延伸的線。各短邊11e2之中央部係於寬度方向DW上包含短邊11e2之中央的線段11e21。短邊11e2之中央部,例如為於寬度方向DW上將短邊11e2一分為三後之中央。第二虛擬線L2係連接於第一虛擬線L1的兩端,且具有自該第一虛擬線L1朝向另一第一虛擬線L1的突狀之線。於本實施形態中,第二虛擬線L2具有自一短邊11e2朝向另一短邊11e2的U字形。再者,第二虛擬線L2例如也可具有大致V字形。The first dummy line L1 and the second dummy line L2 can also be set in the vapor deposition mask
連結部13包含短邊脆弱線13a。帶狀部11具備切除區域11RC及前述的脆弱線11RC1。脆弱線11RC1係位於沿第二虛擬線L2的至少一部分之位置。切除區域11RC係藉由第一虛擬線L1及第二虛擬線L2包圍的區域。蒸鍍遮罩中間體10具備貫通孔11RC2。貫通孔11RC2係於切除區域11RC內連接於圍繞切除區域11RC之邊緣的一部分。於使用第一虛擬線L1及第二虛擬線L2定義切除區域11RC之情況下,第一虛擬線L1與第二虛擬線L2形成具有包圍切除區域11RC之閉環狀的邊緣。The
貫通孔11RC2具有自第一端部RC21朝第二端部RC22延伸的形狀。第一端部RC21連接於線段11e21。第二端部RC22連接於脆弱線11RC1。The through hole 11RC2 has a shape extending from the first end portion RC21 toward the second end portion RC22. The first end portion RC21 is connected to the line segment 11e21. The second end RC22 is connected to the frangible line 11RC1.
由於貫通孔11RC2連接於線段11e21及脆弱線11RC1,因此可以貫通孔11RC2作為起首,於連結部13中將沿線段11e21的短邊脆弱線13a及脆弱線11RC1兩者切斷。因此,與貫通孔11RC2不連接於線段11e21及脆弱線11RC1之任一者的情況比較,容易將連結部13及脆弱線11RC1切斷。Since the through hole 11RC2 is connected to the line segment 11e21 and the line of weakness 11RC1, the through hole 11RC2 can be used as a starter to cut both the line of
再者,短邊脆弱線13a係位於第一虛擬線L1中之除了連接有第一端部RC21的部分以外的部分上。即,短邊脆弱線13a係藉由貫通孔11RC2的第一端部RC21隔斷。脆弱線11RC1係位於第二虛擬線L2中之除了連接有第二端部RC22的部分以外的部分上。即,脆弱線11RC1係藉由貫通孔11RC2的第二端部RC22隔斷。Furthermore, the short-side
脆弱線11RC1具有大致U字形。於本實施形態中,脆弱線11RC1係藉由貫通孔11RC2隔斷,具有缺少U字之彎曲部的一部分之形狀。貫通孔11RC2具有沿長邊11e1延伸的帶狀。換言之,貫通孔11RC2係沿長度方向DL延伸。因此,貫通孔11RC2之第二端部RC22連接於脆弱線11RC1中的彎曲之部分、換言之、第二虛擬線L2中的彎曲之部分。如此,由於貫通孔11RC2沿長邊11e1延伸,因此可藉由貫通孔11RC2將脆弱線11RC1中彎曲的部分隔斷。因此,與貫通孔11RC2沿短邊11e2延伸的情況比較,更容易進行脆弱線11RC1的切斷。The frangible line 11RC1 has a substantially U-shape. In this embodiment, the fragile line 11RC1 is cut off by the through hole 11RC2, and has a shape that lacks a part of the U-shaped bent portion. The through-hole 11RC2 has a strip shape extending along the long side 11e1. In other words, the through hole 11RC2 extends in the longitudinal direction DL. Therefore, the second end portion RC22 of the through hole 11RC2 is connected to the curved portion of the fragile line 11RC1, in other words, the curved portion of the second dummy line L2. In this way, since the through hole 11RC2 extends along the long side 11e1, the bent portion of the fragile line 11RC1 can be cut off by the through hole 11RC2. Therefore, compared with the case where the through-hole 11RC2 extends along the short side 11e2, the frangible line 11RC1 can be cut more easily.
第一端部RC21係於寬度方向DW上將線段11e21二等分。並且,第二端部RC22將脆弱線11RC1之長度二等分。即,第一端部RC21係於短邊11e2延伸之寬度方向DW上連接於第一虛擬線L1的中央。第二端部RC22連接於第二虛擬線L2中的U字之底部。底部係U字的彎曲部。藉此,由於切除區域11RC藉由貫通孔11RC2而被二等分,因此與以具有偏差的方式藉由貫通孔11RC2將切除區域11RC二分割之情況比較,不易於為了去除藉由切除區域11RC之二分割所形成的各部分而需要的負載上產生偏差。因此,容易去除切除區域11RC。The first end portion RC21 bisects the line segment 11e21 in the width direction DW. In addition, the second end portion RC22 bisects the length of the fragile line 11RC1. That is, the first end portion RC21 is connected to the center of the first dummy line L1 in the width direction DW in which the short side 11e2 extends. The second end portion RC22 is connected to the bottom of the U shape in the second dummy line L2. The bottom is a U-shaped curved part. Thereby, since the cutout region 11RC is divided into two parts by the through hole 11RC2, compared with the case where the cutout region 11RC is divided into two parts by the through hole 11RC2 with a deviation, it is not easy to remove the cutout region 11RC. Variation occurs in the load required for each part formed by dividing into two parts. Therefore, the cutout region 11RC is easily removed.
換言之,貫通孔11RC2具有連結切除區域11RC中之最靠近另一短邊11e2的位置、與框狀部12中之與短邊11e2對向的位置之帶狀。即,貫通孔11RC2具有帶狀,該帶狀包含切除區域11RC中的最靠近第二短邊11e2之位置、及框狀部12中之與第一短邊11e2對向的位置。由於貫通孔11RC2連通脆弱線11RC1與連結部13,因此可以貫通孔11RC2作為起首,將脆弱線11RC1及連結部13兩者切斷。因此,與貫通孔11RC2不連通脆弱線11RC1及連結部13的情況比較,更容易將脆弱線11RC1及連結部13切斷。In other words, the through hole 11RC2 has a strip shape connecting the position closest to the other short side 11e2 in the cutout region 11RC and the position opposite to the short side 11e2 in the frame-shaped
於寬度方向DW上,第一端部RC21之長度與第二端部RC22的長度的總和係第一長度。線段11e21之長度與脆弱線11RC1的長度的總和係第二長度。第二長度大於第一長度。In the width direction DW, the sum of the length of the first end portion RC21 and the length of the second end portion RC22 is the first length. The sum of the length of the line segment 11e21 and the length of the fragile line 11RC1 is the second length. The second length is greater than the first length.
再者,沿寬度方向DW之貫通孔11RC2的寬度,例如可為1mm以上且5mm以下,沿長度方向DL之貫通孔11RC2的長度,例如可為20mm以上且4050mm以下。此外,線段11e21的長度,例如可為15mm以上且40mm以下。Furthermore, the width of the through hole 11RC2 along the width direction DW may be, for example, 1 mm or more and 5 mm or less, and the length of the through hole 11RC2 along the longitudinal direction DL may be, for example, 20 mm or more and 4050 mm or less. In addition, the length of the line segment 11e21 may be, for example, 15 mm or more and 40 mm or less.
蒸鍍遮罩中間體10係形成於藉由輥對輥裝置搬送之金屬製片材上。於蒸鍍遮罩中間體10中,由於第二長度較第一長度長,因此與第二長度較第一長度短的情況比較,形成貫通孔11RC2之後的切除區域11RC可藉由框狀部12穩定地支撐。因此,於蒸鍍遮罩中間體10之搬送時,可抑制自框狀部12將切除區域11RC切斷。The vapor deposition mask intermediate 10 is formed on a metal sheet conveyed by a roll-to-roll device. In the vapor deposition mask
由於短邊脆弱線13a係連結部13的一部分,因此如上述,短邊脆弱線13a係機械強度較帶狀部11及框狀部12低的部分。如上述,短邊脆弱線13a例如也可為半蝕刻線。短邊脆弱線13a可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分形成。或者,短邊脆弱線13a也可藉由具有沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分而形成。或者,短邊脆弱線13a也可藉由半蝕刻線、及於半蝕刻線上隔開間隔地排列的複數個貫通孔而形成。即,短邊脆弱線13a也可藉由交互排列的半蝕刻部及貫通孔而形成。Since the short-side
脆弱線11RC1亦為機械強度低於帶狀部11及框狀部12的部分。脆弱線11RC1與短邊脆弱線13a同樣,例如也可為半蝕刻線。脆弱線11RC1也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分而形成。或者,脆弱線11RC1也可藉由沿帶狀部11與框狀部12之邊界隔開間隔排列的複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分而形成。或者,脆弱線11RC1也可藉由半蝕刻線、及於半蝕刻線上隔開間隔排列的複數個貫通孔而形成。即,脆弱線11RC1,也可藉由交互排列的半蝕刻部及貫通孔而形成。The weak line 11RC1 is also a portion whose mechanical strength is lower than that of the belt-shaped
於脆弱線11RC1具有複數個半蝕刻部或複數個貫通孔的情況下,例如,半蝕刻部或貫通孔的長度可為90μm以上且180μm以下,寬度可為60μm以上且90μm以下,且配置其等之間距可為180μm以上且270μm以下。再者,半蝕刻部或貫通孔之長度係沿脆弱線11RC1延伸之方向的大小,寬度係沿與脆弱線11RC1延伸之方向正交的方向的大小。再者,半蝕刻部的深度例如可為第一板厚的50%以上且80%以下。When the line of weakness 11RC1 has a plurality of half-etched portions or a plurality of through holes, for example, the length of the half-etched portions or the through-holes may be 90 μm or more and 180 μm or less, and the width may be 60 μm or more and 90 μm or less, and the like may be arranged. The pitch may be 180 μm or more and 270 μm or less. In addition, the length of the half-etched portion or the through hole is the size along the direction in which the fragile line 11RC1 extends, and the width is the size in the direction orthogonal to the direction in which the fragile line 11RC1 extends. Furthermore, the depth of the half-etched portion may be, for example, 50% or more and 80% or less of the first plate thickness.
或者,脆弱線11RC1也可藉由半蝕刻線、及於半蝕刻線上隔開間隔排列之複數個貫通孔而形成。即,脆弱線11RC1也可藉由交互排列的半蝕刻部及貫通孔而形成。於此情況下,半蝕刻線的寬度,例如可為100μm以上且150μm以下。半蝕刻線的深度,例如可為第一板厚的50%以上且80%以下。位於半蝕刻線上之貫通孔的直徑,例如可為相對於半蝕刻線之寬度的50%以上且80%以下。於半蝕刻線上配置貫通孔的間距,例如可為100μm以上且500μm以下。Alternatively, the fragile line 11RC1 can also be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the fragile line 11RC1 may be formed by alternately arranging half-etched portions and through holes. In this case, the width of the half-etched line may be, for example, 100 μm or more and 150 μm or less. The depth of the half-etched line may be, for example, 50% or more and 80% or less of the first plate thickness. The diameter of the through hole on the half-etched line may be, for example, 50% or more and 80% or less of the width of the half-etched line. The pitch at which the through holes are arranged on the half-etched line may be, for example, 100 μm or more and 500 μm or less.
再者,短邊脆弱線13a之構造與脆弱線11RC1的構造,可彼此相同或不同。例如,短邊脆弱線13a,可藉由半蝕刻線、及於半蝕刻線上隔開間隔排列的複數個貫通孔形成。脆弱線11RC1,例如可藉由複數個貫通孔、及位於鄰接之貫通孔之間的金屬製片材中的一部分形成。或者,脆弱線11RC1,可藉由複數個半蝕刻部、及位於鄰接之半蝕刻部之間的金屬製片材中的一部分形成。Furthermore, the structure of the short-side
貫通孔11RC2係藉由第一蝕刻步驟及第二蝕刻步驟形成。此外,貫通孔11RC2,也可藉由第一蝕刻步驟及第二蝕刻步驟之任一者形成。The through hole 11RC2 is formed by the first etching step and the second etching step. In addition, the through hole 11RC2 may be formed by any one of the first etching step and the second etching step.
於包含短邊脆弱線13a之連結部13具有半蝕刻部或半蝕刻線的情況下,連結部13可藉由第一蝕刻步驟形成。再者,具備半蝕刻部或半蝕刻線的連結部13,也可藉由第二蝕刻步驟形成。於連結部13具有貫通孔之情況下,連結部13可藉由第一蝕刻步驟及第二蝕刻步驟形成。再者,具備貫通孔的連結部13,也可藉由第一蝕刻步驟及第二蝕刻步驟中之任一者形成。In the case where the connecting
於脆弱線11RC1具備半蝕刻部或半蝕刻線之情況下,脆弱線11RC1,可藉由第一蝕刻步驟形成。再者,具備半蝕刻部或半蝕刻線的脆弱線11RC1,也可藉由第二蝕刻步驟形成。於脆弱線11RC1具備貫通孔之情況下,脆弱線11RC1可藉由第一蝕刻步驟及第二蝕刻步驟形成。再者,具有貫通孔的脆弱線11RC1也可藉由第一蝕刻步驟及第二蝕刻步驟之任一者而形成。In the case where the fragile line 11RC1 has a half-etched portion or a half-etched line, the fragile line 11RC1 can be formed by the first etching step. Furthermore, the fragile line 11RC1 including the half-etched portion or the half-etched line can also be formed by the second etching step. In the case where the fragile line 11RC1 has a through hole, the fragile line 11RC1 can be formed by the first etching step and the second etching step. Furthermore, the fragile line 11RC1 having the through hole may be formed by any one of the first etching step and the second etching step.
當自蒸鍍遮罩中間體10獲取蒸鍍遮罩時,首先,將連結部13切斷,使帶狀部11整體自框狀部12切離。此時,連結部13之一部分即短邊脆弱線13a也被切斷。接著,將脆弱線11RC1切斷,使切除區域11RC整體自帶狀部11切離。此時,由於將脆弱線11RC1自連接於第二端部RC22的部分朝位於短邊11e2上的端部切斷,因此容易將脆弱線11RC1切斷。再者,也可將脆弱線11RC1自位於短邊11e2上的端部朝連接於第二端部RC22的部分切斷。When the vapor deposition mask is obtained from the vapor deposition mask
[遮罩裝置]
參照圖4至圖6,對遮罩裝置進行說明。
如圖4所示,遮罩裝置20具備遮罩框架21及複數個蒸鍍遮罩11M。於圖4所示之例子中,遮罩裝置20具備2個蒸鍍遮罩11M,但遮罩裝置20可具備一個以上之任意數量的蒸鍍遮罩11M。[mask device]
4 to 6, the mask device will be described.
As shown in FIG. 4 , the
蒸鍍遮罩11M具有帶狀。蒸鍍遮罩11M具有邊緣11e,該邊緣11e具有一對長邊11e1及一對短邊11e2。蒸鍍遮罩11M具備複數個遮罩部11a。蒸鍍遮罩11M的長邊11e1對應於帶狀部11的長邊11e1,蒸鍍遮罩11M的短邊11e2對應於帶狀部11的短邊11e2。蒸鍍遮罩11M的各短邊11e2包含缺口11e22,缺口11e22具有朝另一短邊11e2凹陷的U字形。缺口11e22於U字之底部之至少一部分具有切斷痕。底部為U字之彎曲部。蒸鍍遮罩11M具有彼此對向的表面11F及背面11R。蒸鍍遮罩11M之表面11F係蒸鍍遮罩中間體10之表面10F的一部分,蒸鍍遮罩11M的背面11R係蒸鍍遮罩中間體10之背面10R的一部分。The
遮罩框架21具有矩形框狀。遮罩框架21係金屬製。較佳為,遮罩框架21係藉由與形成蒸鍍遮罩11M之金屬相同的金屬形成。The
各蒸鍍遮罩11M之表面11F的一部分接合於遮罩框架21。各蒸鍍遮罩11M係以該蒸鍍遮罩11M具備之複數個遮罩部11a位於遮罩框架21劃分的開口之方式接合於遮罩框架21。各蒸鍍遮罩11M係於長度方向DL,且在位於一個缺口11e22與最靠近該缺口11e22的遮罩部11a之間的部分上接合於遮罩框架21。此外,各蒸鍍遮罩11M係於長度方向DL,且在位於另一缺口11e22與最靠近該缺口11e22的遮罩部11a之間的部分上接合於遮罩框架21。A part of the
圖5放大顯示圖4中的區域A。區域A包含缺口11e22中的彎曲部。再者,圖5顯示脆弱線11RC1具備半蝕刻線及位於半蝕刻線上之複數個貫通孔之情況的區域A的構造。FIG. 5 shows an enlarged view of the area A in FIG. 4 . Region A contains the bend in the notch 11e22. 5 shows the structure of the region A in the case where the fragile line 11RC1 includes a half-etched line and a plurality of through holes located on the half-etched line.
如圖5所示,切斷痕11em位於劃分缺口11e22的邊上。切斷痕11em係藉由脆弱線11RC1之切斷而形成的部分。切斷痕11em具備複數個捲曲11em1及複數個凹陷11em2。於切斷痕11em延伸的方向上,捲曲11em1與凹陷11em2交互排列。於切斷痕11em上,複數個捲曲11em1係藉由切斷半蝕刻線而形成的部分。於切斷痕11em上,各凹陷11em2係對應於各貫通孔的部分。As shown in FIG. 5 , the cutting line 11em is located on the side of the dividing notch 11e22. The cutting trace 11em is a portion formed by cutting the fragile line 11RC1. The cutting line 11em includes a plurality of curls 11em1 and a plurality of depressions 11em2. In the direction in which the cut line 11em extends, the curls 11em1 and the recesses 11em2 are alternately arranged. On the cut line 11em, a plurality of curls 11em1 are portions formed by cutting the half-etched lines. On the cutting line 11em, each recess 11em2 corresponds to a portion of each through hole.
再者,於脆弱線11RC1僅具備半蝕刻線之情況下,切斷痕11em係在幾乎整個缺口11e22上具有捲曲。此外,於脆弱線11RC1係由複數個貫通孔及位於貫通孔之間的片材的一部分形成之情況下,切斷痕具有沿缺口11e22交互地排列之捲曲及凹陷。Furthermore, in the case where the fragile line 11RC1 has only a half-etched line, the cutting line 11em has a curl on almost the entire notch 11e22. In addition, when the line of weakness 11RC1 is formed by a plurality of through holes and a part of the sheet located between the through holes, the cutting marks have curls and depressions alternately arranged along the notch 11e22.
如圖6所示,於各蒸鍍遮罩11M接合於遮罩框架21之後,於各蒸鍍遮罩11M中,自包含遮罩部11a的部分上將包含缺口11e22之部分切除。然後,將具備切除了包含缺口11e22之部分的蒸鍍遮罩11M之遮罩裝置20安裝於蒸鍍裝置。As shown in FIG. 6 , after each
[蒸鍍遮罩的製造方法]
蒸鍍遮罩的製造方法,包含自金屬製片材形成蒸鍍遮罩中間體10之過程、及自蒸鍍遮罩中間體10的帶狀部11形成蒸鍍遮罩11M之過程。[Manufacturing method of vapor deposition mask]
The manufacturing method of the vapor deposition mask includes the process of forming the vapor deposition mask
如上述,於形成蒸鍍遮罩中間體10中形成的蒸鍍遮罩中間體10,具備帶狀部11、框狀部12及連結部13。帶狀部11具有:線狀之脆弱線11RC1,其連接於短邊11e2,且具有自該短邊11e2朝向另一短邊11e2之突狀;線段11e21,其被夾持於短邊11e2中之兩端;及切除區域11RC,其藉由脆弱線11RC1包圍,且包含線段11e21及脆弱線11RC1。蒸鍍遮罩中間體10係於切除區域11RC內具備貫通孔11RC2,該貫通孔11RC2連接於圍繞切除區域11RC之邊緣的一部分。As described above, the vapor deposition mask
根據此種之蒸鍍遮罩11M的製造方法,當形成蒸鍍遮罩中間體10時,與於整個切除區域11RC形成貫通孔11RC2的情況比較,於用於片材之蝕刻的阻劑遮罩中,可減小用以形成貫通孔11RC2之貫通孔的大小。藉此,於片材中,可減小自阻劑遮罩之貫通孔露出的區域,因此可減小片材中與蝕刻液接觸的區域。According to the manufacturing method of the
藉此,於片材的蝕刻中,可抑制蝕刻液在片材及阻劑遮罩之間環繞。此外,藉由減小與蝕刻液接觸的區域,片材的蝕刻量難以受蝕刻液的流速左右。因此,可提高對片材之圖案化之形狀的精度。As a result, in the etching of the sheet, the etchant can be suppressed from circulating between the sheet and the resist mask. In addition, by reducing the area in contact with the etching solution, the etching amount of the sheet is less likely to be affected by the flow rate of the etching solution. Therefore, the accuracy of the patterned shape of the sheet can be improved.
如以上說明,根據蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法的一實施形態,可獲得以下記載的功效。 (1)蝕刻液難以於阻劑遮罩與片材之間產生環繞,並且,藉由濕式蝕刻形成之蒸鍍遮罩中間體10的形狀難以受使用於濕式蝕刻之蝕刻液的流速左右。因此,可提高圖案加工之形狀的精度。As described above, according to one embodiment of the vapor deposition mask intermediate body, the vapor deposition mask, and the method for producing the vapor deposition mask, the following effects can be obtained. (1) It is difficult for the etching solution to form a circle between the resist mask and the sheet, and the shape of the vapor deposition mask intermediate 10 formed by wet etching is difficult to be affected by the flow rate of the etching solution used for wet etching. . Therefore, the precision of the shape of pattern processing can be improved.
(2)可以貫通孔11RC2作為起首,將短邊脆弱線13a與脆弱線11RC1兩者切斷。因此,與貫通孔11RC2不連接於線段11e21及脆弱線11RC1的情況比較,更容易將短邊脆弱線13a及脆弱線11RC1切斷。(2) Both the short-side
(3)可藉由貫通孔11RC2將脆弱線11RC1中彎曲的部分隔斷。因此,與貫通孔11RC2沿短邊11e2延伸的情況比較,更容易將脆弱線11RC1切斷。(3) The bent portion of the fragile line 11RC1 can be cut off by the through hole 11RC2. Therefore, compared with the case where the through-hole 11RC2 extends along the short side 11e2, the fragile line 11RC1 can be cut more easily.
(4)由於切除區域11RC係藉由貫通孔11RC2二等分,因此與以具有偏差之方式藉由貫通孔11RC2將切除區域11RC二分割的情況比較,不易於為了去除藉由切除區域11RC之二分割所形成的各部分而需要的負載上產生偏差。因此,容易去除切除區域11RC。(4) Since the cutout region 11RC is divided into two parts by the through hole 11RC2, it is not easy to remove the cutout region 11RC by the second part of the cutout region 11RC compared with the case where the cutout region 11RC is divided into two parts with the through hole 11RC2. The load required to divide the formed parts varies. Therefore, the cutout region 11RC is easily removed.
(5)形成貫通孔11RC2之後的切除區域11RC係藉由框狀部12穩定地支撐。因此,於蒸鍍遮罩中間體10之搬送時,可抑制切除區域11RC被自框狀部12上切斷。(5) The cutout region 11RC after the through hole 11RC2 is formed is stably supported by the frame-shaped
(6)由於貫通孔11RC2通過脆弱線11RC1與連結部13,因此可以貫通孔11RC2作為起首,將脆弱線11RC1與連結部13兩者切斷。因此,與貫通孔11RC2不通過脆弱線11RC1及連結部13的情況比較,更容易將脆弱線11RC1及連結部13切斷。(6) Since the through-hole 11RC2 passes through the fragile line 11RC1 and the connecting
[變形例]
再者,前述實施形態可依如下方式變更且實施。
[貫通孔]
・也可於切除區域11RC內形成複數個貫通孔。即,帶狀部11也可具有複數個貫通孔11RC2。[Variation]
In addition, the above-mentioned embodiment can be changed and implemented as follows.
[Through Hole]
・A plurality of through holes may be formed in the cutout region 11RC. That is, the
例如,如圖7所示,貫通孔11RC2也可具有2個貫通孔11RC2。於圖7所示之例子中,於第二虛擬線L2上連接有2個貫通孔11RC2,且藉由2個貫通孔11RC2形成V字。於此情況下也可獲得與前述(2)同樣的功效。再者,帶狀部11也可具有3個以上之貫通孔11RC2。For example, as shown in FIG. 7 , the through hole 11RC2 may have two through holes 11RC2. In the example shown in FIG. 7 , two through holes 11RC2 are connected to the second dummy line L2, and a V-shape is formed by the two through holes 11RC2. Also in this case, the same effect as the aforementioned (2) can be obtained. In addition, the
・如圖8所示,帶狀部11也可具有沿寬度方向DW延伸且僅與脆弱線11RC1連接的貫通孔11RC2。即,帶狀部11也可具有僅連接於第二虛擬線L2的貫通孔11RC2。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。・As shown in FIG. 8 , the
再者,於沿寬度方向DW延伸的貫通孔11RC2中,也可僅由任一之端部連接於脆弱線11RC1即第二虛擬線L2,也可兩者之端部不連接於脆弱線11RC1即第二虛擬線L2。於任一之情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。Furthermore, in the through-hole 11RC2 extending in the width direction DW, only one end portion may be connected to the fragile line 11RC1, that is, the second dummy line L2, or both ends may not be connected to the fragile line 11RC1, that is, the second dummy line L2. The second virtual line L2. In either case, since the band-shaped
・如圖9所示,貫通孔11RC2除了具備沿長度方向DL延伸的部分外,還可具備沿寬度方向DW延伸的部分。即,貫通孔11RC2也可具有十字形。於此情況下,貫通孔11RC2係於3個部位連接於脆弱線11RC1。換言之,貫通孔11RC2係於第二虛擬線L2上的3個部位連接於第二虛擬線L2。因此,與貫通孔11RC2僅於第二虛擬線L2上的一個部位連接於第二虛擬線L2的情況比較,更容易將脆弱線11RC1切斷。・As shown in FIG. 9 , the through hole 11RC2 may have a portion extending in the width direction DW in addition to the portion extending in the longitudinal direction DL. That is, the through hole 11RC2 may have a cross shape. In this case, the through-hole 11RC2 is connected to the fragile line 11RC1 at three locations. In other words, three parts of the through hole 11RC2 on the second dummy line L2 are connected to the second dummy line L2. Therefore, compared with the case where the through-hole 11RC2 is connected to the second dummy line L2 only at one location on the second dummy line L2, the fragile line 11RC1 can be cut more easily.
再者,於具有十字形的貫通孔11RC2中,4個端部中的一個以上,也可不與圍繞切除區域11RC的邊緣連接。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。In addition, in the through-hole 11RC2 having a cross shape, one or more of the four ends may not be connected to the edge surrounding the cutout region 11RC. In this case, since the band-shaped
・圖9所示之貫通孔11RC2,也可變更為具有T字形的貫通孔。即,貫通孔11RC2也可具有連接於線段11e21上之一個部位及連接於脆弱線11RC1上的2個部位之T字形。換言之,貫通孔也可具有連接於第一虛擬線L1上之一個部位及連接於第二虛擬線L2上的2個部位之T字形。或者,貫通孔也可具有連接於脆弱線11RC1上之3個部位之T字形。換言之,貫通孔也可具有連接於第二虛擬線L2上之3個部位之T字形。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。・The through hole 11RC2 shown in FIG. 9 can also be changed to a T-shaped through hole. That is, the through-hole 11RC2 may have a T-shape in which one part is connected to the line segment 11e21 and two parts are connected to the fragile line 11RC1. In other words, the through hole may have a T-shape in which one part is connected to the first dummy line L1 and two parts are connected to the second dummy line L2. Alternatively, the through hole may have a T-shape connected to three places on the fragile line 11RC1. In other words, the through hole may have a T-shape connected to three locations on the second dummy line L2. In this case, since the band-shaped
・如圖10所示,貫通孔11RC2也可具有菱形形狀。貫通孔11RC2連接於線段11e21上的一個部位及脆弱線11RC1上的3個部位。換言之,貫通孔11RC2連接於第一虛擬線L1上的一個部位及第二虛擬線L2上的3個部位。於此情況下,由於帶狀部11具有位於切除區域11RC之一部分的貫通孔11RC2,因此也可獲得與前述(1)同樣的功效。再者,於具有菱形之貫通孔11RC2中,4個角部中的一個以上也可不與圍繞切除區域11RC的邊緣連接。於此情況下,也可獲得與前述(1)同樣的功效。・As shown in FIG. 10 , the through hole 11RC2 may have a rhombus shape. The through hole 11RC2 is connected to one site on the line segment 11e21 and three sites on the line of weakness 11RC1. In other words, the through hole 11RC2 is connected to one location on the first dummy line L1 and three locations on the second dummy line L2. In this case, since the band-shaped
・貫通孔11RC2也可位於切除區域11RC內,且不與切除區域11RC的邊緣連接。於此情況下,由於帶狀部11於切除區域11RC內具有貫通孔11RC2,因此可獲得與前述(1)同樣的功效。惟,藉由將貫通孔11RC2連接於切除區域11RC的邊緣,容易將圍繞切除區域11RC的短邊脆弱線13a及脆弱線11RC1切斷。再者,貫通孔11RC2可具有任意之形狀,例如,可具有三角形及四邊形等多邊形形狀、及圓形等。・The through hole 11RC2 may be located in the cutout region 11RC and not connected to the edge of the cutout region 11RC. In this case, since the
[連結部]
如圖11所示,連結部13也可具備短邊脆弱線13a及橋接部13b。於蒸鍍遮罩中間體10中,周邊部11b及框狀部12具有第一板厚。複數個橋接部13b位於沿帶狀部11的邊緣11e隔開間隔之位置,各橋接部13b具有第一板厚。沿帶狀部11之邊緣11e中之連結部13連接的部分以外的部分配置有縫隙10S。由於沿帶狀部11之邊緣11e中之連結部13連接的部分以外的部分配置縫隙10S,因此容易進行將橋接部13b切斷的作業。[connection part]
As shown in FIG. 11 , the
10:蒸鍍遮罩中間體
10F:表面
10R:背面
10S:縫隙
11:帶狀部
11a:遮罩部
11b:周邊部
11e:邊緣
11e1:長邊
11e2:短邊
11e21:線段
11h:遮罩孔
11hL:大孔
11hS:小孔
11RC:切除區域
11RC1:脆弱線
11RC2:貫通孔
11M:蒸鍍遮罩
11F:表面
11R:背面
11e22:缺口
11em:切斷痕
11em1:捲曲
11em2:凹陷
12:框狀部
13:連結部
13a:短邊脆弱線
DL:長度方向
DW:寬度方向
L1:第一虛擬線
L2:第二虛擬線
RC21:第一端部
RC22:第二端部
20:遮罩裝置
21:遮罩框架10: Evaporation mask intermediate
10F:
圖1為顯示一實施形態之蒸鍍遮罩中間體的構造的俯視圖。 圖2為顯示圖1所示之帶狀部的遮罩部中之構造的剖視圖。 圖3為顯示圖1所示之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖4為顯示將自圖1所示之蒸鍍遮罩中間體獲得的蒸鍍遮罩接合於遮罩框架上之狀態的俯視圖。 圖5為放大顯示圖4所示之區域A的俯視圖。 圖6為顯示將圖4所示之蒸鍍遮罩的一部分切斷之狀態的俯視圖。 圖7為顯示第一變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖8為顯示第二變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖9為顯示第三變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖10為顯示第四變形例之蒸鍍遮罩中間體中的一切除區域及切除區域之周邊構造的俯視圖。 圖11為顯示第五變形例之蒸鍍遮罩中間體的構造之俯視圖。FIG. 1 is a plan view showing the structure of a vapor deposition mask intermediate body according to an embodiment. FIG. 2 is a cross-sectional view showing a structure in a mask portion of the belt-shaped portion shown in FIG. 1 . FIG. 3 is a plan view showing a cutout area and a peripheral structure of the cutout area in the vapor deposition mask intermediate body shown in FIG. 1 . FIG. 4 is a plan view showing a state where the vapor deposition mask obtained from the vapor deposition mask intermediate shown in FIG. 1 is bonded to a mask frame. FIG. 5 is an enlarged plan view showing the area A shown in FIG. 4 . FIG. 6 is a plan view showing a state where a part of the vapor deposition mask shown in FIG. 4 is cut. 7 is a plan view showing a cut-out region and a peripheral structure of the cut-out region in the vapor deposition mask intermediate body of the first modification. 8 is a plan view showing a cutout region and a peripheral structure of the cutout region in the vapor deposition mask intermediate body of the second modification. 9 is a plan view showing a cutout region and a peripheral structure of the cutout region in the vapor deposition mask intermediate body of the third modification. 10 is a plan view showing a cutout region and a peripheral structure of the cutout region in the vapor deposition mask intermediate body of the fourth modification. 11 is a plan view showing the structure of a vapor deposition mask intermediate body of a fifth modification.
11:帶狀部 11: Ribbon
11e2:短邊 11e2: Short side
11e21:線段 11e21: Line segment
11RC:切除區域 11RC: Resection area
11RC1:脆弱線 11RC1: Fragile Line
11RC2:貫通孔 11RC2: Through hole
12:框狀部 12: Frame part
13:連結部 13: Links
13a:短邊脆弱線 13a: Short edge fragile line
DL:長度方向 DL: length direction
DW:寬度方向 DW: width direction
L1:第一虛擬線 L1: first virtual line
L2:第二虛擬線 L2: Second virtual line
RC21:第一端部 RC21: First end
RC22:第二端部 RC22: Second end
Claims (8)
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JP2020122414A JP7151745B2 (en) | 2020-07-16 | 2020-07-16 | Evaporation mask intermediate, evaporation mask, and evaporation mask manufacturing method |
JP2020-122414 | 2020-07-16 |
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TW202210645A true TW202210645A (en) | 2022-03-16 |
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JP (1) | JP7151745B2 (en) |
KR (1) | KR102604344B1 (en) |
CN (2) | CN115803471B (en) |
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JP2002001694A (en) | 2000-06-19 | 2002-01-08 | Dainippon Printing Co Ltd | Trimming method and trimming device |
TWI472631B (en) | 2012-03-30 | 2015-02-11 | Au Optronics Corp | Shadow mask strip |
TWI661063B (en) * | 2016-08-05 | 2019-06-01 | 日商凸版印刷股份有限公司 | Metal mask for vapor deposition, production method for metal mask for vapor deposition, and production method for display device |
JP7121918B2 (en) * | 2016-12-14 | 2022-08-19 | 大日本印刷株式会社 | Evaporation mask device and method for manufacturing evaporation mask device |
KR102397503B1 (en) | 2018-09-07 | 2022-05-12 | 도판 인사츠 가부시키가이샤 | A deposition mask intermediate, a deposition mask, and a method for manufacturing a deposition mask |
CN213266672U (en) * | 2019-09-06 | 2021-05-25 | 凸版印刷株式会社 | Intermediate for vapor deposition mask and vapor deposition mask |
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- 2021-07-14 TW TW110125816A patent/TWI821707B/en active
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CN115803471B (en) | 2023-11-14 |
CN216107159U (en) | 2022-03-22 |
WO2022014662A1 (en) | 2022-01-20 |
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CN115803471A (en) | 2023-03-14 |
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