CN115803471A - Intermediate for vapor deposition mask, and method for producing vapor deposition mask - Google Patents

Intermediate for vapor deposition mask, and method for producing vapor deposition mask Download PDF

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Publication number
CN115803471A
CN115803471A CN202180049368.5A CN202180049368A CN115803471A CN 115803471 A CN115803471 A CN 115803471A CN 202180049368 A CN202180049368 A CN 202180049368A CN 115803471 A CN115803471 A CN 115803471A
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China
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line
vapor deposition
deposition mask
short side
mask
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Granted
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CN202180049368.5A
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Chinese (zh)
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CN115803471B (en
Inventor
松隈香
樋口宏和
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Toppan Inc
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Toppan Printing Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B26HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26DCUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/18Means for removing cut-out material or waste
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The intermediate vapor deposition mask is formed from a metal sheet, and is provided with: a band-shaped part including an edge and a mask part, the edge having first and second long sides and first and second short sides, the mask part having a plurality of mask holes; a frame-shaped portion surrounding the band-shaped portion; and a connecting portion located between the band-shaped portion and the frame-shaped portion, and connecting at least the first short side of the band-shaped portion and the frame-shaped portion. The strip portion includes a fragile line, a line segment, and a cut region. The frangible line is formed in a linear shape having a protrusion from the first short side toward the second short side. The line segment is a portion of the first short side sandwiched between both ends of the fragile line. The cut-out region is surrounded by a line segment and a line of weakness and includes a line segment and a line of weakness. The vapor deposition mask intermediate has a through hole connected to a portion of an edge surrounding the cutout region in the cutout region.

Description

Intermediate for vapor deposition mask, and method for producing vapor deposition mask
Technical Field
The present invention relates to a vapor deposition mask intermediate, a vapor deposition mask, and a method for manufacturing a vapor deposition mask.
Background
In forming a display element included in an organic EL device, vacuum deposition is used. In the vacuum vapor deposition, a vapor deposition mask is used to form a layer having a predetermined shape required for a display element. The vapor deposition mask has a belt shape formed of a metal sheet. The vapor deposition mask has a pair of short sides, and each short side has a notch having a shape recessed toward the other short side before the vapor deposition mask is used. When the vapor deposition mask is used, the vapor deposition mask is attached to a mask frame in a state where each short side is pulled in a direction away from a short side different from the short side (for example, see patent document 1).
Documents of the prior art
Patent document
Patent document 1: international publication No. 2020/050398
Disclosure of Invention
Problems to be solved by the invention
However, the vapor deposition mask is formed by wet etching a metal sheet. In this case, a through hole is formed in a metal sheet used for manufacturing the vapor deposition mask at a portion corresponding to the notch of the vapor deposition mask. The area of the through-hole corresponding to the notch is larger than the area of the other through-hole formed in the vapor deposition mask. Therefore, the portion of the metal sheet corresponding to the notch comes into contact with a larger amount of the etching liquid, so that the etching liquid is likely to be collected between the metal sheet and the resist mask formed on the sheet, or the progress of etching is likely to be influenced by the flow rate of the etching liquid. As a result, the accuracy of the shape obtained by patterning is likely to be lowered in the portions corresponding to the cutouts of the vapor deposition mask.
The purpose of the present invention is to provide a vapor deposition mask intermediate and a vapor deposition mask that are capable of improving the accuracy of the shape obtained by patterning.
Means for solving the problems
Provided is an intermediate for vapor deposition mask. The vapor deposition mask intermediate is formed of a metal sheet. The disclosed device is provided with: a band-shaped part including an edge and a mask part, the edge having first and second long sides and first and second short sides, the mask part having a plurality of mask holes; a frame-shaped portion surrounding the belt-shaped portion; and a connecting portion located between the belt-like portion and the frame-like portion, and connecting at least the first short side of the belt-like portion and the frame-like portion. The strip portion includes a weakened line, a line segment, and a cut region. The two ends of the weak line are connected to the first short side, and the weak line is formed in a line shape having a protrusion shape from the first short side toward the second short side. The line segment is a portion of the first short side sandwiched between both ends of the brittle line. The cutting region is surrounded by the line segment and the brittle line, and includes the line segment and the brittle line. The vapor deposition mask intermediate includes a through hole connected to a portion of an edge surrounding the cutout region in the cutout region.
Another aspect provides an evaporation mask. The vapor deposition mask has a band shape. The vapor deposition mask includes: a rim having a pair of long sides and a pair of short sides; and a mask portion having a plurality of mask holes. Each short side comprises a cut having a U-shape recessed towards the other of said short sides. The slit has a cut line in at least a part of the bottom portion, which is the U-shaped bent portion.
Another embodiment provides a method for manufacturing a vapor deposition mask. The method for manufacturing a vapor deposition mask includes: a step of forming a vapor deposition mask intermediate body from a metal sheet, the vapor deposition mask intermediate body comprising: a band-shaped part including an edge and a mask part, the edge having first and second long sides and first and second short sides, the mask part having a plurality of mask holes; a frame-shaped portion surrounding the band-shaped portion; and a connecting portion located between the band-shaped portion and the frame-shaped portion, the connecting portion connecting at least the first short side of the band-shaped portion and the frame-shaped portion; and forming a vapor deposition mask from the belt-like portion. The strip portion includes a fragile line, a line segment, and a cut region. The two ends of the brittle line are connected with the first short side, and the brittle line has a protruding shape from the first short side to the second short side. The line segment is a portion of the first short side sandwiched by both ends of the weak line. The cutting region is surrounded by the line segment and the brittle line, and includes the line segment and the brittle line. The vapor deposition mask intermediate includes a through hole connected to a portion of an edge surrounding the cutout region in the cutout region.
Drawings
Fig. 1 is a plan view showing a structure of a vapor deposition mask intermediate according to an embodiment.
Fig. 2 is a sectional view showing a structure of a mask portion of the band portion shown in fig. 1.
Fig. 3 is a plan view showing a cutout region and a peripheral structure of the cutout region of one of the vapor deposition mask intermediate bodies shown in fig. 1.
Fig. 4 is a plan view showing a state in which a vapor deposition mask obtained from the vapor deposition mask intermediate shown in fig. 1 is joined to a mask frame.
Fig. 5 is a plan view showing an enlarged view of the area a shown in fig. 4.
Fig. 6 is a plan view showing a state in which a part of the vapor deposition mask shown in fig. 4 is cut.
Fig. 7 is a plan view showing a cutout region and a peripheral structure of the cutout region of the vapor deposition mask intermediate according to the first modification.
Fig. 8 is a plan view showing a cutout region and a peripheral structure of the cutout region of one of the vapor deposition mask intermediate bodies according to the second modification.
Fig. 9 is a plan view showing a cutout region and a peripheral structure of the cutout region in one of the vapor deposition mask intermediates according to the third modification example.
Fig. 10 is a plan view showing a cutout region and a peripheral structure of the cutout region of one of the vapor deposition mask intermediate bodies according to the fourth modification example.
Fig. 11 is a plan view showing a structure of a vapor deposition mask intermediate according to a fifth modification example.
Detailed Description
One embodiment of a vapor deposition mask intermediate, a vapor deposition mask, and a method for manufacturing a vapor deposition mask will be described with reference to fig. 1 to 6. The vapor deposition mask intermediate, the vapor deposition mask, and the method for manufacturing the mask will be described in order below.
[ intermediate vapor deposition mask ]
The vapor deposition mask intermediate is described with reference to fig. 1 to 3.
The vapor deposition mask intermediate 10 shown in fig. 1 is formed of a metal sheet. The metal sheet is made of, for example, an iron-nickel alloy or an iron-nickel-cobalt alloy. The iron-nickel alloy is, for example, an iron-nickel alloy containing 30 mass% or more of nickel. Among the iron-nickel alloys, an invar alloy, which is an alloy mainly composed of 36 mass% of nickel and the balance of iron, is preferable. When 36 mass% of nickel and the balance of iron are the main components of the metal plate, the balance of the metal plate may contain additives such as chromium, manganese, carbon, and cobalt.
In addition, the thermal expansion coefficient of the iron-nickel-cobalt alloy is smaller than that of the iron-nickel alloy. The iron-nickel-cobalt alloy is, for example, an iron-nickel-cobalt alloy containing 30 mass% or more of nickel and 3 mass% or more of cobalt. Among the iron-nickel-cobalt based alloys, super invar alloys, which are alloys mainly containing 32 mass% of nickel, 4 to 5 mass% of cobalt, and the balance of iron, are preferred. When an alloy of 32 mass% of nickel, 4 mass% to 5 mass% of cobalt, and the balance of iron is the main component of the metal plate, the balance of the metal plate may contain additives such as chromium, manganese, and carbon.
The vapor deposition mask intermediate 10 includes a belt-like portion 11, a frame-like portion 12, and a connecting portion 13. The belt-shaped portion 11 includes an edge 11e and a mask portion 11a. The edge 11e has a pair of long sides 11e1 and a pair of short sides 11e2. The direction in which the long side 11e1 extends is the long side direction DL, and the direction in which the short side 11e2 extends is the width direction DW. That is, the edge 11e has first and second long sides 11e1 and first and second short sides 11e2. The longitudinal direction DL and the width direction DW are mutually orthogonal directions. The mask portion 11a includes a plurality of mask holes 11h. Each mask hole 11h is a hole for forming a predetermined pattern on a film formation target by passing a vapor deposition material through each mask hole 11h. The frame-shaped portion 12 surrounds the belt-shaped portion 11. The connecting portion 13 is located between the belt-like portion 11 and the frame-like portion 12, and connects at least the short side 11e2 of the belt-like portion 11 to the frame-like portion 12. The connecting portion 13 connects a part of the long side 11e1 to the frame-shaped portion 12 in addition to the short side 11e2. The vapor deposition mask intermediate 10 includes a front surface 10F and a back surface 10R opposite to the front surface 10F.
The band portion 11 includes a plurality of mask portions 11a and peripheral portions 11b. The plurality of mask portions 11a are arranged at intervals in the longitudinal direction DL. Each mask portion 11a has, for example, a rectangular shape. Each mask portion 11a has a plurality of mask holes 11h. In each mask portion 11a, a plurality of mask holes 11h are arranged in a predetermined rule. The peripheral portion 11b has a shape surrounding each mask portion 11a. Since the band-shaped portion 11 of the present embodiment includes a plurality of mask portions 11a arranged along the longitudinal direction DL, the peripheral portion 11b has a ladder shape. The peripheral portion 11b does not have the mask hole 11h.
In the vapor deposition mask intermediate 10, the peripheral portion 11b of the belt-like portion 11 and the frame-like portion 12 have a first plate thickness. The first plate thickness is, for example, 15 μm to 30 μm. The mask portion 11a of the band portion 11 may have a first plate thickness or may have a second plate thickness smaller than the first plate thickness. In the case where the mask portion 11a has the second plate thickness, the mask holes 11h adjacent to each other are connected to each other among the plurality of mask holes 11h formed in the mask portion 11a. Thereby, the mask portion 11a has the second plate thickness.
In the example shown in fig. 1, two strip-shaped portions 11 are arranged with a gap therebetween in the width direction DW. The vapor deposition mask intermediate 10 may have only one stripe portion 11 in the width direction DW, or may have three or more stripe portions arranged in the width direction DW. In the longitudinal direction DL, two strip-shaped portions 11 arranged in the width direction DW are disposed with a gap therebetween.
The frame-shaped portion 12 has a shape surrounding the belt-shaped portion 11 when viewed from a viewpoint facing the surface 10F of the vapor deposition mask intermediate 10. The frame-shaped portion 12 has a shape that surrounds each of the belt-shaped portions 11 independently.
A connecting portion 13 and a slit 10S are present at the boundary between the belt-like portion 11 and the frame-like portion 12. The slits 10S penetrate the vapor deposition mask intermediate 10 along the thickness direction of the vapor deposition mask intermediate 10. The slit 10S is located in the width direction DW with respect to the mask portion 11a at the boundary between the band portion 11 and the frame portion 12. The plurality of mask portions 11a are sandwiched by a pair of slits 10S in the width direction DW.
The connecting portion 13 is located on the entire portion except for the portion where the slit 10S is located, in the boundary between the belt-like portion 11 and the frame-like portion 12. The connection portion 13 may be a half-etched line, for example. The connecting portion 13 may be formed of a plurality of through holes arranged at intervals along the boundary between the band-shaped portion 11 and the frame-shaped portion 12, and a part of a metal sheet positioned between the adjacent through holes. Alternatively, the coupling portion 13 may be formed by a plurality of half-etched portions arranged at intervals along the boundary between the belt-shaped portion 11 and the frame-shaped portion 12, and a part of a metal sheet positioned between the adjacent half-etched portions.
When the coupling portion 13 includes a plurality of half-etched portions or a plurality of through-holes, for example, the half-etched portions or the through-holes may have a length of 90 μm to 180 μm, a width of 60 μm to 90 μm, and a pitch of disposing the half-etched portions or the through-holes may be 180 μm to 270 μm. The length of the half-etched portion or the through hole is a dimension along the direction in which the coupling portion 13 extends, and the width is a dimension along a direction orthogonal to the direction in which the coupling portion 13 extends. The depth of the half-etched portion is, for example, 50% to 80% of the first plate thickness.
Alternatively, the connection portion 13 may be formed of a half-etched line and a plurality of through-holes arranged at intervals on the half-etched line. In this case, the width of the half etching line may be, for example, 100 μm or more and 150 μm or less. The depth of the half etching line may be, for example, 50% to 80% of the first plate thickness. The diameter of the through hole located on the half etching line may be, for example, 50% to 80% of the width of the half etching line. The pitch of the through holes arranged on the half-etched line may be, for example, 100 μm or more and 500 μm or less.
The half-etched line and the half-etched portion are portions where a part of the metal sheet is etched in the thickness direction. The connecting portion 13 has a mechanical strength lower than those of the belt-like portion 11 and the frame-like portion 12.
Fig. 2 shows a cross-sectional structure of the mask portion 11a along a plane perpendicular to the surface 10F and extending in the width direction DW.
As shown in fig. 2, each mask hole 11h formed in the mask portion 11a has a large hole 11hL and a small hole 11hS. The large holes 11hL are opened in the surface 10F of the vapor deposition mask intermediate 10. On the other hand, the pinholes 11hS are open on the rear surface 10R of the vapor deposition mask intermediate 10. The openings of the large holes 11hL located on the front surface 10F are larger than the openings of the small holes 11hS located on the rear surface 10R, as viewed from a viewpoint facing the front surface 10F. One large hole 11hL is connected to one small hole 11hS in the middle of the vapor deposition mask intermediate 10 in the thickness direction.
The plurality of mask holes 11h of the mask portion 11a are formed by wet etching of the sheet. In the wet etching of the sheet, first, the plurality of small holes 11hS are formed by etching of the sheet from the back surface toward the front surface of the sheet. The etching process for forming the small holes 11hS is a first etching process. Next, the large holes 11hL connected to the small holes 11hS are formed by etching the sheet from the front surface toward the back surface of the sheet. The etching process for forming the large holes 11hL is a second etching process.
As viewed from a viewpoint facing the surface 10F of the vapor deposition mask intermediate 10, a plurality of mask holes 11h having a predetermined size and arrangement are formed in each mask portion 11a, for example, so that a display device having a resolution of 300ppi or more and 1000ppi or less can be manufactured.
Fig. 3 shows a portion of the strip portion 11 including one short side 11e2 and a portion of the frame portion 12 located around the short side 11e2. In the belt-shaped portion 11, the portion including the one short side 11e2 and the portion including the other short side 11e2 are different in position in the longitudinal direction DL, and the structure in a plan view facing the plane in which the belt-shaped portion 11 extends is common.
As shown in fig. 3, the strip portion 11 includes a linear fragile line 11RC1 and a cut region 11RC. Both ends of the fragile line 11RC1 are connected to the short side 11e2, and the fragile line 11RC1 has a protruding shape from the short side 11e2 toward the other short side 11e2. That is, the fragile line 11RC1 has a protruding shape from the first short side 11e2 toward the second short side 11e2. The cutout region 11RC is surrounded by the line segment 11e21 sandwiched between both ends of the weak line 11RC1 in the short side 11e2 and the weak line 11RC1, and includes the line segment 11e21 and the weak line 11RC1. The vapor deposition mask intermediate 10 includes through holes 11RC2. The through hole 11RC2 is connected to a part of the edge surrounding the cutout region 11RC in the cutout region 11RC. In the present embodiment, since both the line segment 11e21 and the fragile line 11RC1 are disconnected by the through hole 11RC2, the cut-out region 11RC is surrounded by the edge of the open loop formed by the line segment 11e21 and the fragile line 11RC1.
When the vapor deposition mask intermediate 10 is manufactured by patterning a metal sheet by wet etching, the through-holes 11RC2 are formed only in a part of the cutout regions 11RC, and therefore, the area exposed to the etching solution in the metal sheet is smaller than in the case where all of the cutout regions 11RC are penetrated by wet etching. Therefore, the etching solution is less likely to pool between the resist mask and the sheet, and the shape of the vapor deposition mask intermediate 10 formed by wet etching is less likely to be affected by the flow rate of the etching solution used for wet etching. Therefore, burrs due to wet etching can be suppressed, as in the case where the entire cut region 11RC is removed by wet etching. As a result, the accuracy of the shape in pattern formation can be improved.
Further, since the cutout region 11RC is surrounded by the portion of the connecting portion 13 and the frangible line 11RC1 as described above, a notch that is recessed from the short side 11e2 toward the other short side 11e2 can be formed in each short side 11e2 by cutting the connecting portion 13 and the frangible line 11RC1.
The vapor deposition mask intermediate 10 may have a first virtual line L1 and a second virtual line L2. The first virtual line L1 is a line extending along the center of each short side 11e2. The center of each short side 11e2 is a line segment 11e21 including the center of the short side 11e2 in the width direction DW. The center of the short side 11e2 is, for example, the center of the short side 11e2 divided into three in the width direction DW. The second virtual line L2 is a line connected to both ends of the first virtual line L1 and having a protruding shape from the first virtual line L1 toward the other first virtual line L1. In the present embodiment, the second virtual line L2 has a U shape extending from one short side 11e2 to the other short side 11e2. The second virtual line L2 may have a substantially V-shape, for example.
The linking portion 13 includes a short-side brittle line 13a. The band-shaped portion 11 includes a cut region 11RC and the fragile line 11RC1. The fragile line 11RC1 is located along at least a part of the second imaginary line L2. The cutout region 11RC is a region surrounded by the first imaginary line L1 and the second imaginary line L2. The vapor deposition mask intermediate 10 includes through holes 11RC2. The through hole 11RC2 is connected to a part of the edge surrounding the cutout region 11RC in the cutout region 11RC. When the cutout region 11RC is defined by using the first virtual line L1 and the second virtual line L2, the first virtual line L1 and the second virtual line L2 form a closed-loop edge surrounding the cutout region 11RC.
The through hole 11RC2 has a shape extending from the first end RC21 toward the second end RC 22. The first end portion RC21 is connected to the line segment 11e21. The second end portion RC22 is connected to the fragile line 11RC1.
Since the through hole 11RC2 is connected to the line segment 11e21 and the fragile line 11RC1, both the fragile line 13a along the short side of the line segment 11e21 and the fragile line 11RC1 in the connection portion 13 can be cut with the through hole 11RC2 as a trigger (that is, with the through hole 11RC2 as a starting point). Therefore, the connection portion 13 and the fragile line 11RC1 are easier to cut than in the case where the through hole 11RC2 is not connected to either of the line segment 11e21 and the fragile line 11RC1.
Further, the short-side fragile line 13a is located in a portion other than the portion where the first end portion RC21 is connected in the first imaginary line L1. That is, the short-side fragile line 13a is cut by the first end portion RC21 of the through hole 11RC2. The fragile line 11RC1 is located in a portion other than the portion where the second end portion RC22 is connected in the second imaginary line L2. That is, the fragile line 11RC1 is disconnected by the second end portion RC22 of the through hole 11RC2.
The fragile line 11RC1 has a substantially U shape. In the present embodiment, the fragile line 11RC1 is cut by the through hole 11RC2, and thus has a shape in which a part of the bent portion in the U-shape is missing. The through-hole 11RC2 has a strip shape extending along the long side 11e 1. In other words, the through-hole 11RC2 extends along the longitudinal direction DL. Therefore, the second end portion RC22 of the through hole 11RC2 is connected to the bent portion in the fragile line 11RC1, in other words, the bent portion in the second imaginary line L2. In this way, since the through-hole 11RC2 extends along the long side 11e1, the bent portion of the fragile wire 11RC1 can be cut by the through-hole 11RC2. This makes it easier to cut the fragile line 11RC1, compared to the case where the through hole 11RC2 extends along the short side 11e2.
The first end portion RC21 bisects the line segment 11e21 in the width direction DW. The second end portion RC22 bisects the length of the fragile line 11RC1. That is, the first end portion RC21 is connected to the center of the first imaginary line L1 in the width direction DW along which the short side 11e2 extends. The second end portion RC22 is connected to the bottom of the U-shape in the second imaginary line L2. The bottom is the bend in the U. Accordingly, since the cutout region 11RC is divided into two by the through hole 11RC2, the load required to remove each portion formed by dividing the cutout region 11RC into two is less likely to vary, as compared to a case where the cutout region 11RC is divided into two by the through hole 11RC2 so as to be offset to one side. Therefore, the removal of the cut region 11RC is easy.
In other words, the through-hole 11RC2 has a band shape connecting a position closest to the other short side 11e2 in the cutout region 11RC and a position facing the short side 11e2 in the frame-shaped portion 12. That is, the through hole 11RC2 has a strip shape including a position closest to the second short side 11e2 in the cutout region 11RC and a position facing the first short side 11e2 in the frame-shaped portion 12. Since the through hole 11RC2 passes through the fragile wire 11RC1 and the coupling portion 13, both the fragile wire 11RC1 and the coupling portion 13 can be cut off when the through hole 11RC2 is used as a trigger. Therefore, the frangible line 11RC1 and the connecting portion 13 are easier to cut than in the case where the through-hole 11RC2 does not pass through the frangible line 11RC1 and the connecting portion 13.
In the width direction DW, the sum of the length of the first end portion RC21 and the length of the second end portion RC22 is the first length. The sum of the length of the line segment 11e21 and the length of the fragile line 11RC1 is the second length. The second length is longer than the first length.
The width of the through-hole 11RC2 along the width direction DW may be, for example, 1mm to 5mm, and the length of the through-hole 11RC2 along the longitudinal direction DL may be, for example, 20mm to 4050 mm. The length of the line segment 11e21 may be, for example, 15mm to 40 mm.
The vapor deposition mask intermediate 10 is formed as a metal sheet conveyed by a roll-to-roll apparatus. In the vapor deposition mask intermediate 10, the second length is longer than the first length, and therefore the cutout region 11RC after the formation of the through hole 11RC2 is stably supported by the frame-shaped portion 12, as compared with the case where the second length is shorter than the first length. Therefore, the cut region 11RC can be prevented from being cut from the frame portion 12 during conveyance of the vapor deposition mask intermediate 10.
Since the short-side brittle line 13a is a part of the connecting portion 13, the short-side brittle line 13a has a lower mechanical strength than the band portion 11 and the frame portion 12, as described above. As described above, the short-side fragile line 13a may be, for example, a half-etched line. The short-side fragile line 13a may be formed by a plurality of through holes arranged at intervals along the boundary between the band portion 11 and the frame portion 12, and a part of a metal sheet positioned between the adjacent through holes. Alternatively, the short-side fragile line 13a may be formed by a plurality of half-etched portions arranged at intervals along the boundary between the band portion 11 and the frame portion 12, and a part of a metal sheet positioned between the adjacent half-etched portions. Alternatively, the short-side fragile line 13a may be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the short-side fragile line 13a may be formed by half-etched portions and through holes alternately arranged.
The fragile wire 11RC1 is also a portion having a mechanical strength lower than those of the band-shaped portion 11 and the frame-shaped portion 12. The fragile line 11RC1 may be, for example, a half-etched line, similarly to the short-side fragile line 13a. The fragile line 11RC1 may be formed by a plurality of through holes arranged at intervals along the boundary between the band portion 11 and the frame portion 12, and a part of the metal sheet positioned between the adjacent through holes. Alternatively, the fragile line 11RC1 may be formed by a plurality of half-etched portions arranged at intervals along the boundary between the band portion 11 and the frame portion 12, and a part of a metal sheet positioned between adjacent half-etched portions. Alternatively, the fragile line 11RC1 may be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the fragile line 11RC1 may be formed by half-etched portions and through holes alternately arranged.
When the fragile line 11RC1 includes a plurality of half-etched portions or a plurality of through holes, for example, the length of the half-etched portions or the through holes may be 90 μm or more and 180 μm or less, the width may be 60 μm or more and 90 μm or less, and the pitch of disposing the half-etched portions or the through holes may be 180 μm or more and 270 μm or less. The length of the half-etched portion or the through hole is a dimension along the direction in which the fragile line 11RC1 extends, and the width is a dimension along the direction orthogonal to the direction in which the fragile line 11RC1 extends. The depth of the half-etched portion may be, for example, 50% to 80% of the first plate thickness.
Alternatively, the fragile line 11RC1 may be formed by a half-etched line and a plurality of through holes arranged at intervals on the half-etched line. That is, the fragile line 11RC1 may be formed by half-etched portions and through holes alternately arranged. In this case, the width of the half etching line may be, for example, 100 μm or more and 150 μm or less. The depth of the half etching line may be, for example, 50% to 80% of the first plate thickness. The diameter of the through hole located on the half etching line may be, for example, 50% to 80% of the width of the half etching line. The pitch of the through holes arranged on the half-etched line may be, for example, 100 μm or more and 500 μm or less.
The structure of the short-side fragile line 13a and the structure of the fragile line 11RC1 may be the same or different from each other. The short-side fragile line 13a may be formed by, for example, a half-etching line and a plurality of through holes arranged at intervals on the half-etching line. The fragile wire 11RC1 may be formed of a plurality of through holes and a part of a metal sheet positioned between adjacent through holes, for example. Alternatively, the fragile line 11RC1 may be formed by a plurality of half-etched portions and a part of a metal sheet positioned between adjacent half-etched portions.
The through hole 11RC2 is formed by a first etching step and a second etching step. The through hole 11RC2 may be formed by either one of the first etching step and the second etching step.
When the coupling portion 13 including the short-side brittle line 13a includes a half-etched portion or a half-etched line, the coupling portion 13 may be formed by the first etching step. The coupling portion 13 including the half-etched portion or the half-etched line may be formed by the second etching step. When the coupling portion 13 includes the through hole, the coupling portion 13 may be formed by the first etching step and the second etching step. The connection portion 13 having the through hole may be formed by either one of the first etching step and the second etching step.
When the fragile line 11RC1 includes a half-etched portion or a half-etched line, the fragile line 11RC1 may be formed by the first etching step. The fragile line 11RC1 including the half-etched portion or the half-etched line may be formed by the second etching step. When the fragile line 11RC1 includes the through hole, the fragile line 11RC1 may be formed by the first etching step and the second etching step. The fragile line 11RC1 having the through hole may be formed by either one of the first etching step and the second etching step.
When obtaining a vapor deposition mask from the vapor deposition mask intermediate 10, the connecting portion 13 is first cut to separate the entire belt-like portion 11 from the frame-like portion 12. At this time, the short-side brittle line 13a as a part of the connecting portion 13 is also cut. Subsequently, the fragile wire 11RC1 is cut, and the entire cut region 11RC is cut from the band-shaped portion 11. At this time, the fragile line 11RC1 is cut from the portion connected to the second end portion RC22 toward the end portion located on the short side 11e2, whereby the fragile line 11RC1 is easily cut. The fragile line 11RC1 may be cut from the end located on the short side 11e2 toward the portion connected to the second end RC 22.
[ mask device ]
The mask device will be described with reference to fig. 4 to 6.
As shown in fig. 4, the mask device 20 includes a mask frame 21 and a plurality of vapor deposition masks 11M. In the example shown in fig. 4, the mask device 20 includes two vapor deposition masks 11M, but the mask device 20 may include one or more arbitrary number of vapor deposition masks 11M.
The vapor deposition mask 11M has a band shape. The vapor deposition mask 11M has an edge 11e, and the edge 11e has a pair of long sides 11e1 and a pair of short sides 11e2. The vapor deposition mask 11M includes a plurality of mask portions 11a. The long side 11e1 of the vapor deposition mask 11M corresponds to the long side 11e1 of the belt-like portion 11, and the short side 11e2 of the vapor deposition mask 11M corresponds to the short side 11e2 of the belt-like portion 11. Each short side 11e2 of the vapor deposition mask 11M includes a notch 11e22 having a U shape recessed toward the other short side 11e2. The slit 11e22 has a cut line in at least a part of the bottom of the U-shape. The bottom is the bend in the U. The vapor deposition mask 11M has a front surface 11F and a back surface 11R facing each other. The front surface 11F of the vapor deposition mask 11M is a part of the front surface 10F of the vapor deposition mask intermediate 10, and the back surface 11R of the vapor deposition mask 11M is a part of the back surface 10R of the vapor deposition mask intermediate 10.
The mask frame 21 has a rectangular frame shape. The mask frame 21 is made of metal. The mask frame 21 is preferably formed of the same metal as that forming the vapor deposition mask 11M.
A part of the surface 11F of each vapor deposition mask 11M is joined to the mask frame 21. Each vapor deposition mask 11M is joined to the mask frame 21 so that the plurality of mask portions 11a included in the vapor deposition mask 11M are positioned in the openings defined by the mask frame 21. Each vapor deposition mask 11M is joined to the mask frame 21 at a portion located between one slit 11e22 and the mask portion 11a closest to the slit 11e22 in the longitudinal direction DL. Each vapor deposition mask 11M is joined to the mask frame 21 at a portion located between the other slit 11e22 and the mask portion 11a closest to the slit 11e22 in the longitudinal direction DL.
Fig. 5 is an enlarged view of the area a in fig. 4. The region a includes the bent portion of the slit 11e22. Fig. 5 shows a structure of the region a in the case where the fragile line 11RC1 includes a half-etched line and a plurality of through holes located on the half-etched line.
As shown in fig. 5, a cut line 11em exists on the side dividing the cut 11e22. The cut line 11em is a portion formed by cutting the fragile line 11RC1. The cut trace 11em has a plurality of beads 11em1 and a plurality of recesses 11em2. In the direction in which the cut trace 11em extends, the beads 11em1 and the recesses 11em2 are alternately arranged. In the cutting mark 11em, the plurality of beads 11em1 are portions formed by cutting half of the etching line. In the cutting trace 11em, each recess 11em2 is a portion corresponding to each through hole.
In the case where the fragile line 11RC1 includes only the half-etched line, the cut line 11em has a curl extending over substantially the entire notch 11e22. Further, in the case where the fragile line 11RC1 is formed by a plurality of through holes and a part of the sheet located between the through holes, the cut trace has beads and depressions alternately arranged along the cuts 11e22.
As shown in fig. 6, after the vapor deposition masks 11M are joined to the mask frame 21, the portions of the vapor deposition masks 11M including the notches 11e22 are removed from the portions including the mask portions 11a. Then, the mask device 20 including the vapor deposition mask 11M from which the portion including the notch 11e22 was removed is attached to the vapor deposition device.
[ method for producing vapor deposition mask ]
The method for manufacturing the vapor deposition mask includes a step of forming a vapor deposition mask intermediate 10 from a metal sheet; and a step of forming a vapor deposition mask 11M from the belt-shaped portion 11 of the vapor deposition mask intermediate 10.
As described above, the vapor deposition mask intermediate 10 formed in the step of forming the vapor deposition mask intermediate 10 includes the belt-like portions 11, the frame-like portions 12, and the connecting portions 13. The belt-shaped portion 11 includes: a linear weak line 11RC1 connected to the short side 11e2 and having a protruding shape from the short side 11e2 toward the other short side 11e 2; and a cutout region 11RC surrounded by the line segment 11e21 sandwiched between both ends of the short side 11e2 and the fragile line 11RC1, and including the line segment 11e21 and the fragile line 11RC1. The vapor deposition mask intermediate 10 includes a through hole 11RC2 connected to a part of an edge surrounding the cutout region 11RC in the cutout region 11RC.
According to the method for manufacturing the vapor deposition mask 11M, when the vapor deposition mask intermediate 10 is formed, the size of the through hole for forming the through hole 11RC2 can be reduced in the resist mask used for etching the sheet, as compared to the case where the through hole 11RC2 is formed in the entire cutout region 11RC. This can reduce the area of the sheet exposed from the through-hole of the resist mask, and thus can reduce the area of the sheet in contact with the etching solution.
This can prevent the etching liquid from collecting between the sheet and the resist mask during etching of the sheet. Further, by reducing the area in contact with the etching liquid, the etching amount of the sheet is made less susceptible to the flow rate of the etching liquid. Therefore, the accuracy of the shape obtained by patterning the sheet can be improved.
As described above, according to the embodiments of the intermediate vapor deposition mask, the vapor deposition mask, and the method for manufacturing the vapor deposition mask, the following effects can be obtained.
(1) The etching solution is less likely to pool between the resist mask and the sheet, and the shape of the vapor deposition mask intermediate 10 formed by wet etching is less likely to be affected by the flow rate of the etching solution used for wet etching. Therefore, the accuracy of the shape obtained by the patterning can be improved.
(2) Both the short-side weakened line 13a and the weakened line 11RC1 can be cut off using the through hole 11RC2 as a trigger. Therefore, the short-side weakened line 13a and the weakened line 11RC1 are cut more easily than in the case where the through hole 11RC2 is not connected to the line segment 11e21 and the weakened line 11RC1.
(3) The bent portion of the fragile wire 11RC1 can be cut off by the through hole 11RC2. This makes it easier to cut the fragile line 11RC1, compared to the case where the through hole 11RC2 extends along the short side 11e2.
(4) Since the cutout region 11RC is bisected by the through hole 11RC2, the load required to remove each portion formed by the cutout region 11RC being bisected is less likely to vary, compared to a case where the cutout region 11RC is bisected to one side by the through hole 11RC2. Therefore, the removal of the cut region 11RC is easy.
(5) The cutout region 11RC in which the through hole 11RC2 is formed is stably supported by the frame portion 12. Therefore, the cut region 11RC can be prevented from being cut from the frame portion 12 during conveyance of the vapor deposition mask intermediate 10.
(6) Since the through hole 11RC2 passes through the fragile wire 11RC1 and the coupling portion 13, both the fragile wire 11RC1 and the coupling portion 13 can be cut off when the through hole 11RC2 is used as a trigger. Therefore, the fragile line 11RC1 and the coupling portion 13 are easier to cut than the case where the through hole 11RC2 does not pass through the fragile line 11RC1 and the coupling portion 13.
[ modification ]
The above embodiment can be modified and implemented as follows.
[ through-holes ]
A plurality of through holes may be formed in the cutout region 11RC. That is, the band-shaped portion 11 may have a plurality of through holes 11RC2.
For example, as shown in fig. 7, the through hole 11RC2 may have two through holes 11RC2. In the example shown in fig. 7, the two through holes 11RC2 are connected to each other on the second virtual line L2, and the two through holes 11RC2 are formed in a V-shape. In this case, the effect according to (2) above can be obtained. The belt-like portion 11 may have three or more through holes 11RC2.
As shown in fig. 8, the strip portion 11 may have a through hole 11RC2 extending in the width direction DW and connected only to the fragile line 11RC1. That is, the strip-shaped portion 11 may have the through hole 11RC2 connected only to the second virtual line L2. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the effect according to the above (1) can be obtained.
In the through hole 11RC2 extending in the width direction DW, only one end may be connected to the second virtual line L2, which is the fragile line 11RC1, or both ends may not be connected to the second virtual line L2, which is the fragile line 11RC1. In either case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the effect according to the above (1) can be obtained.
As shown in fig. 9, the through-hole 11RC2 may have a portion extending in the width direction DW in addition to a portion extending in the longitudinal direction DL. That is, the through-holes 11RC2 may have a cross shape. In this case, the through hole 11RC2 is connected to the fragile line 11RC1 at three points. In other words, the through-hole 11RC2 is connected to the second virtual line L2 at three locations on the second virtual line L2. Therefore, the fragile line 11RC1 is easier to cut than in the case where the through hole 11RC2 is connected to the second virtual line L2 only at one location on the second virtual line L2.
In the through hole 11RC2 having a cross shape, one or more of the four end portions may not be connected to the edge surrounding the cut region 11RC. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the effect according to the above (1) can be obtained.
The through-hole 11RC2 shown in fig. 9 may be a T-shaped through-hole. That is, the through hole 11RC2 may have a T-shape connected to one portion on the line segment 11e21 and two portions on the fragile line 11RC1. In other words, the through-hole may have a T-shape connecting one portion on the first virtual line L1 and two portions on the second virtual line L2. Alternatively, the through hole may have a T-shape connected to three portions on the fragile line 11RC1. In other words, the through-hole may have a T-shape connected to three points on the second virtual line L2. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the effect according to the above (1) can be obtained.
As shown in fig. 10, the through-hole 11RC2 may have a diamond shape. The through hole 11RC2 is connected to one portion of the line segment 11e21 and three portions of the fragile line 11RC1. In other words, the through hole 11RC2 is connected to one portion on the first virtual line L1 and three portions on the second virtual line L2. In this case, since the band-shaped portion 11 has the through hole 11RC2 located in a part of the cutout region 11RC, the effect according to the above (1) can be obtained. In the through hole 11RC2 having the diamond shape, one or more of the four corners may not be connected to the edge surrounding the cutout region 11RC. In this case, the effect according to (1) above can be obtained.
The through hole 11RC2 may be located in the cutout region 11RC and not connected to the edge of the cutout region 11RC. In this case, since the band-shaped portion 11 has the through hole 11RC2 in the cutout region 11RC, the effect according to the above (1) can be obtained. However, the through hole 11RC2 is connected to the edge of the cut region 11RC, and thus the short-side weakened line 13a and the weakened line 11RC1 surrounding the cut region 11RC can be easily cut. The through-hole 11RC2 may have any shape, for example, a polygonal shape such as a triangular shape and a rectangular shape, a circular shape, or the like.
[ connecting part ]
As shown in fig. 11, the connecting portion 13 may include a short-side brittle line 13a and a bridge portion 13b. In the vapor deposition mask intermediate 10, the peripheral portion 11b and the frame-like portion 12 have a first plate thickness. The plurality of bridge portions 13b are located at spaced-apart positions along the edge 11e of the belt-shaped portion 11, and each bridge portion 13b has a first plate thickness. A slit 10S is present along the edge 11e of the band-shaped portion 11 except for the portion to which the coupling portion 13 is connected. Since the slit 10S is present along the edge 11e of the band-shaped portion 11 except for the portion connected by the connecting portion 13, the bridging portion 13b can be easily cut.

Claims (8)

1. A vapor deposition mask intermediate formed from a metal sheet, comprising:
a strip portion including an edge having first and second long sides and first and second short sides and a mask portion having a plurality of mask holes;
a frame-shaped portion surrounding the band-shaped portion; and
a connecting portion located between the belt-like portion and the frame-like portion, connecting at least the first short side of the belt-like portion and the frame-like portion,
the strip part comprises a fragile line, a line segment and a cutting area,
both ends of the brittle line are connected to the first short side, the brittle line is formed in a line shape having a protrusion shape from the first short side toward the second short side,
the line segment is a portion of the first short side sandwiched between both ends of the brittle line,
the cutting region is surrounded by the line segment and the brittle line and includes the line segment and the brittle line,
the vapor deposition mask intermediate includes a through hole connected to a portion of an edge surrounding the cutout region in the cutout region.
2. The vapor deposition mask intermediate according to claim 1,
the through hole has a first end and a second end, and has a shape extending from the first end toward the second end,
the first end portion is connected to the line segment,
the second end portion is connected to the frangible line.
3. The vapor deposition mask intermediate according to claim 2,
the above-mentioned brittle line has a substantially U-shape,
the through hole has a strip shape extending along the long side.
4. The vapor deposition mask intermediate according to claim 3,
the first end portion bisects the length of the line segment in a direction in which the first short side extends,
the second end portion bisects the length of the line of weakness.
5. The vapor deposition mask intermediate according to claim 4,
a sum of a length of the first end portion and a length of the second end portion in a direction in which the first short side extends is a first length,
the sum of the length of the line segment and the length of the brittle line is a second length,
the second length is longer than the first length.
6. The vapor deposition mask intermediate according to claim 1,
the through hole has a strip shape connecting a position closest to the second short side in the cutout region and a position facing the first short side in the frame-shaped portion.
7. A vapor deposition mask having a strip shape, comprising:
an edge having a pair of long sides and a pair of short sides; and
a mask portion having a plurality of mask holes,
each short side comprises a cut having a U-shape recessed towards the other of said short sides,
the notch has a cut line in at least a part of the bottom portion, which is the U-shaped bent portion.
8. A method for manufacturing a vapor deposition mask, comprising:
a step of forming a vapor deposition mask intermediate body from a metal sheet, the vapor deposition mask intermediate body comprising: a band-shaped part including an edge and a mask part, the edge having first and second long sides and first and second short sides, the mask part having a plurality of mask holes; a frame-shaped portion surrounding the belt-shaped portion; and a connecting portion located between the belt-like portion and the frame-like portion, and connecting at least the first short side of the belt-like portion and the frame-like portion; and
a step of forming a vapor deposition mask from the belt-like portion,
the ribbon portion includes a brittle line, a line segment, and a cut region, both ends of the brittle line are connected to the first short side, the brittle line is formed in a line shape having a protruding shape from the first short side toward the second short side, the line segment is a portion of the first short side sandwiched between both ends of the brittle line, the cut region is surrounded by the line segment and the brittle line and includes the line segment and the brittle line,
the vapor deposition mask intermediate includes a through hole connected to a portion of an edge surrounding the cutout region in the cutout region.
CN202180049368.5A 2020-07-16 2021-07-15 Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask Active CN115803471B (en)

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JP2002001694A (en) * 2000-06-19 2002-01-08 Dainippon Printing Co Ltd Trimming method and trimming device
CN102703857A (en) * 2012-03-30 2012-10-03 友达光电股份有限公司 Shade strip
CN109642310A (en) * 2016-08-05 2019-04-16 凸版印刷株式会社 The manufacturing method of vapor deposition metal mask, the manufacturing method of vapor deposition metal mask and display device
WO2020050398A1 (en) * 2018-09-07 2020-03-12 凸版印刷株式会社 Vapor-deposition mask intermediate, vapor-deposition mask, and vapor-deposition mask production method

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