CN213266672U

CN213266672U - Intermediate for vapor deposition mask and vapor deposition mask

Info

Publication number: CN213266672U
Application number: CN202021882786.1U
Authority: CN
Inventors: 松隈香; 相川建一郎
Original assignee: Toppan Printing Co Ltd
Current assignee: Toppan Inc
Priority date: 2019-09-06
Filing date: 2020-09-02
Publication date: 2021-05-25
Anticipated expiration: 2030-09-02
Also published as: KR20220045254A; TW202122607A; TWI819236B; KR102504437B1; JPWO2021045137A1; JP7010410B2; WO2021045137A1; KR20220165793A; CN114341393A

Abstract

The utility model relates to an evaporation coating mask midbody and evaporation coating mask. The band-shaped part is provided with a frame-shaped part surrounding the band-shaped part. The belt-shaped portion includes a mask portion in which a plurality of mask holes are formed, and a peripheral portion surrounding the mask portion. The peripheral portion and the frame-shaped portion have a first plate thickness. The edges of the band include a first edge and a second edge. The first edge includes a portion opposed to the mask portion in a width direction of the belt-shaped portion. A separating portion separating the first edge from the frame-shaped portion is located between the first edge and the frame-shaped portion. A linear half-etched portion having a second plate thickness thinner than the first plate thickness is located between the second edge and the frame-shaped portion.

Description

Intermediate for vapor deposition mask and vapor deposition mask

Technical Field

The utility model relates to an evaporation coating mask midbody and evaporation coating mask.

Background

In the production of a vapor deposition mask using a roll-to-roll method, various processes such as etching are performed on a metal sheet while the metal sheet is being conveyed from a take-up roll to a take-up roll. In the manufacturing process of the evaporation mask, an evaporation mask intermediate is formed from a metal sheet. The vapor deposition mask intermediate includes, for example, a belt-shaped portion for forming a vapor deposition mask and a frame-shaped portion surrounding the belt-shaped portion. The edges of the strip-shaped portion include a long side extending in the conveying direction of the metal sheet and a short side extending in the width direction of the metal sheet. The long side is cut from the frame portion, that is, separated from the frame portion, and the short side is connected to the frame portion through a perforation. The band-shaped portion is cut from the frame portion by cutting the perforation, and a vapor deposition mask is formed from the band-shaped portion (see, for example, patent document 1).

[ patent document 1] Japanese patent laid-open publication No. 2015-55007

However, in the step of cutting the belt-like portion from the frame-like portion, an external force for cutting is applied to the intermediate vapor deposition mask at the boundary between the belt-like portion and the frame-like portion. From the viewpoint of suppressing the deformation of the band-shaped portion, it is desirable that the external force applied to the boundary between the band-shaped portion and the frame-shaped portion is sufficiently small. On the other hand, if the external force required to cut the frame-shaped portion from the band-shaped portion is too small, the band-shaped portion is cut from the frame-shaped portion by the external force acting on the band-shaped portion during the transportation of the vapor deposition mask intermediate. In view of this, it is required for the vapor deposition mask intermediate to ensure connection between the belt-like portion and the frame-like portion when the vapor deposition mask intermediate is conveyed, and to facilitate cutting of the belt-like portion, that is, removal of the belt-like portion from the frame-like portion when the vapor deposition mask is obtained from the belt-like portion.

SUMMERY OF THE UTILITY MODEL

An object of the present invention is to provide an evaporation mask intermediate and an evaporation mask that can ensure the connection between a belt-shaped portion and a frame-shaped portion when the evaporation mask intermediate is conveyed and can easily cut off the belt-shaped portion when the evaporation mask is manufactured.

The intermediate vapor deposition mask for solving the above problems includes a belt-like portion and a frame-like portion surrounding the belt-like portion. The belt-shaped portion includes a mask portion in which a plurality of mask holes are formed, and a peripheral portion surrounding the mask portion. The peripheral portion and the frame-shaped portion have a first plate thickness. The edge of the band-shaped portion includes a first edge and a second edge, the first edge includes a portion facing the mask portion in the width direction of the band-shaped portion, a separating portion separating the first edge from the frame-shaped portion is located between the first edge and the frame-shaped portion, and a linear half-etched portion having a second plate thickness thinner than the first plate thickness is located between the second edge and the frame-shaped portion.

The vapor deposition mask for solving the above problem includes a mask portion in which a plurality of mask holes are formed, a peripheral portion surrounding the mask portion, and a vapor deposition mask having a stripe-shaped edge. The edge includes a first edge and a second edge, and the first edge includes a portion facing the mask portion in a width direction of the vapor deposition mask. The vapor deposition mask further includes a cut line located at the second edge.

According to the vapor deposition mask intermediate and the vapor deposition mask, the thickness of the connecting portion between the band-shaped portion and the frame-shaped portion can be reduced as compared with the case where the band-shaped portion is connected to the frame-shaped portion through the perforation. Therefore, the connecting portion between the band-shaped portion and the frame-shaped portion can be cut with a smaller force than the case of cutting the through portions in the perforations. Therefore, the strip-shaped portion can be easily cut out from the frame-shaped portion in the production of the vapor deposition mask. On the other hand, when the vapor deposition mask intermediate is transported, the connection between the band-shaped portion and the frame-shaped portion is secured by the linear half-etched portion that divides the second edge of the band-shaped portion from the frame-shaped portion.

In the intermediate vapor deposition mask body, the linear half-etching portion has one or more through portions arranged along a direction in which the linear half-etching portion extends, and the through portions penetrate the intermediate vapor deposition mask body in a thickness direction of the intermediate vapor deposition mask body. According to the intermediate vapor deposition mask body, the half-etched portions are easily cut by the amount that the linear half-etched portions have the through portions, along the direction in which the linear half-etched portions extend.

In the intermediate vapor deposition mask body, the edge of the belt-like portion includes a pair of short sides extending in the width direction of the belt-like portion, each of the short sides has a notch recessed toward the other short side, at least a part of the first edge and a part other than the notch in the edge of the belt-like portion is the second edge, the half-etched line has a shape along the second edge, and the notch is separated from the frame-like portion by the separation portion.

The vapor deposition mask formed from the belt-shaped portion by cutting the belt-shaped portion from the frame-shaped portion is attached to a frame that supports the vapor deposition mask when the vapor deposition mask is used. At this time, in order to suppress the generation of wrinkles in the vapor deposition mask, the vapor deposition mask is attached to the frame while pulling a pair of short sides of the edges of the vapor deposition mask in a direction away from the other short side. When the cut mark of the half-etched portion is located in a notch provided in a short side of the edge of the belt-like portion, a wrinkle due to the cut mark is generated in the vapor deposition mask. In this regard, according to the vapor deposition mask intermediate, since the cut-off trace of the half-etched portion is not located in the notch, the occurrence of wrinkles in the vapor deposition mask can be suppressed when the vapor deposition mask is used.

In the intermediate vapor deposition mask body, the edge of the belt-like portion has a rectangular shape defined by the pair of short sides and the pair of long sides, the second edge includes a corner portion formed by the short sides and the long sides, and the half-etched line includes a portion having an L-shape along the corner portion.

According to the intermediate vapor deposition mask body, since the corner portion included in the edge of the belt-shaped portion is connected to the frame-shaped portion by the half-etched portion, the corner portion at the edge of the belt-shaped portion can be prevented from being lifted from the frame-shaped portion compared to the other portions of the belt-shaped portion when the intermediate vapor deposition mask body is conveyed. This can prevent the strip-shaped portion from being deformed by the corner portion catching on a device or the like provided around the vapor deposition mask intermediate body when the vapor deposition mask intermediate body is conveyed.

In the intermediate vapor deposition mask, the frame-shaped portion includes a linear fragile portion extending from the separating portion toward an outer edge of the frame-shaped portion, and the fragile portion has a mechanical strength lower than that of a portion other than the fragile portion in the frame-shaped portion.

According to the intermediate vapor deposition mask body, the frame-shaped portion is easily cut along the fragile portion because the fragile portion has a lower mechanical strength than the portion other than the fragile portion in the frame-shaped portion. Further, since one end of the weak portion is connected to the separating portion, the ring formed by the frame-shaped portion can be cut when the band-shaped portion is removed from the frame-shaped portion. This facilitates cutting of the half-etched portion.

Effect of the utility model

According to the present invention, the connection between the belt-like portion and the frame-like portion can be ensured during the transportation of the vapor deposition mask intermediate, and the belt-like portion can be easily cut off during the production of the vapor deposition mask.

Drawings

Fig. 1 is a plan view showing a structure of a vapor deposition mask intermediate according to an embodiment.

Fig. 2 is a partial plan view showing a first example of the structure of the intermediate vapor deposition mask shown in fig. 1.

Fig. 3 is a partial plan view showing a second example of the structure of the vapor deposition mask intermediate shown in fig. 1.

Fig. 4 is a sectional view showing a structure along line IV-IV of fig. 1.

Fig. 5 is a sectional view showing the structure along the line V-V of fig. 1.

Fig. 6 is a cross-sectional view showing a first example of the structure of the mask hole provided in the belt-like portion shown in fig. 1.

Fig. 7 is a cross-sectional view showing a second example of the structure of the mask hole provided in the belt-shaped portion shown in fig. 1.

Fig. 8 is a plan view showing a structure of a mask device including a vapor deposition mask formed from the vapor deposition mask intermediate shown in fig. 1.

Fig. 9 is a plan view showing a first example of the structure in the region a of fig. 8.

Fig. 10 is a plan view showing a second example of the structure in the region a of fig. 8.

Fig. 11 is a plan view showing a structure of a first modification of the vapor deposition mask intermediate.

Fig. 12 is an enlarged plan view of the structure of the upstream end portion of the upstream fragile portion.

Fig. 13 is an enlarged plan view of the structure of the downstream end portion of the downstream side fragile portion.

Fig. 14 is an enlarged plan view of a part of the first example of the cutting line shown in fig. 11.

Fig. 15 is an enlarged plan view of a part of a second example of the cutting line shown in fig. 11.

Fig. 16 is an enlarged plan view of a part of the third example of the cutting line shown in fig. 11.

Fig. 17 is a plan view showing a structure of a second modification of the vapor deposition mask intermediate.

Description of reference numerals:

10 … evaporating the mask intermediate; 11 … a band; 12 … frame-like part; 13 … cutting line; 14 … half etch line; 20 … mask set; 21 … framework; 31 … vapor deposition mask.

Detailed Description

One embodiment of the vapor deposition mask intermediate and the vapor deposition mask will be described with reference to fig. 1 to 10. The vapor deposition mask intermediate and the vapor deposition mask will be described in order below.

[ intermediate vapor deposition mask ]

The vapor deposition mask intermediate will be described with reference to fig. 1 to 7.

Fig. 1 shows a part of a planar structure of a vapor deposition mask intermediate. In fig. 1, for convenience of illustration, the cut lines are indicated by thick lines, and the half-etched lines are indicated by dots (halftone dots).

As shown in fig. 1, the vapor deposition mask intermediate 10 includes a belt-like portion 11 and a frame-like portion 12 surrounding the belt-like portion 11. The belt-shaped portion 11 includes a mask portion 11a in which a plurality of mask holes 11H are formed, and a peripheral portion 11b surrounding the mask portion 11 a. The peripheral portion 11b and the frame portion 12 have a first plate thickness. The edge 11E of the belt-like portion 11 is constituted by a first edge 11E1 and a second edge 11E 2. The first edge 11E1 includes a portion located in the width direction DW of the belt portion 11 with respect to the mask portion 11 a. That is, the first edge 11E1 includes a portion facing the mask portion 11a in the width direction DW of the belt-like portion 11. The first edge 11E1 is separated from the frame-like portion 12 by the cutting line 13. The cutting line 13 is an example of a separating portion. The cutting line 13 penetrates the vapor deposition mask intermediate 10 in the thickness direction of the vapor deposition mask intermediate 10. The first edge 11E1 and the frame-like portion 12 are discontinuous with each other with the cutting line 13 therebetween. The second edge 11E2 and the frame-shaped portion 12 are divided by a linear half-etched portion (hereinafter referred to as a half-etched line 14) having a second plate thickness smaller than the first plate thickness. The half etching line 14 connects the second edge 11E2 of the belt-shaped portion 11 with a part of the frame-shaped portion 12.

In addition, the half etching line 14 includes: a portion formed by half etching, that is, a portion formed by processing a metal sheet for forming the vapor deposition mask intermediate 10 by etching from the front surface of the metal sheet to a point halfway toward the back surface. That is, the half etching line 14 includes a portion having the second plate thickness and is formed only by a portion having a thickness equal to or less than the second plate thickness. As described below, the half etching line 14 may include one or more through portions located on the half etching line 14 in the direction in which the half etching line 14 extends. The penetration portion penetrates the vapor deposition mask intermediate 10 in the thickness direction of the vapor deposition mask intermediate 10.

On the other hand, the cutting line 13 has a linear cutting portion. The cutting line 13 penetrates the vapor deposition mask intermediate 10 in the thickness direction of the vapor deposition mask intermediate 10. The half etching line 14 includes a portion connecting the band-shaped portion 11 and the frame-shaped portion 12 to each other, while the cutting line 13 does not include a portion connecting the band-shaped portion 11 and the frame-shaped portion 12 to each other.

The thickness of the connecting portion between the band-shaped portion 11 and the frame-shaped portion 12 can be reduced as compared with the case where the band-shaped portion 11 is connected to the frame-shaped portion 12 through a perforation. Therefore, the connecting portion between the band-shaped portion 11 and the frame-shaped portion 12 can be cut with a smaller force than the case of cutting the through portions in the perforations. Therefore, the strip-shaped portion 11 can be easily cut from the frame-shaped portion 12 in manufacturing the vapor deposition mask. On the other hand, when the vapor deposition mask intermediate 10 is transported, the connection of the frame-shaped portion 12 to the belt-shaped portion 11 is secured by the half etching line 14 that divides the second edge 11E2 of the edges 11E of the belt-shaped portion 11 from the frame-shaped portion 12. The sprocket holes have a structure in which portions having the first plate thickness and through holes are alternately arranged.

In addition, the half etching line 14 is not located between the first edge 11E1 of the edges 11E of the belt-shaped portion 11 and the frame-shaped portion 12. Therefore, the shortest distance between the half etching line 14 and the mask portion 11a can be increased as compared with the case where the half etching line 14 connects the first edge 11E1 to the frame-shaped portion 12. Therefore, when the half etching lines 14 are cut, the external force applied to the half etching lines 14 is less likely to be applied to the mask portion 11 a. This can suppress the mask portion 11a from being deformed by the cutting of the half etching line 14, and further, can suppress the mask hole 11H formed in the mask portion 11a from being deformed.

The width of the cutting line 13 may be, for example, 1mm to 2mm, and may be about 1.5 mm. The vapor deposition mask is manufactured using a roll-to-roll method. Therefore, when the width of the cutting line 13 is 2mm or less, the frame-shaped portion 12 can be prevented from deviating from the belt-shaped portion 11 by the width of the cutting line 13 or more during the transportation of the vapor deposition mask intermediate 10. Further, the width of the cutting line 13 is 1mm or more, so that when the cutting line 13 is formed by wet etching, the etching liquid can be easily supplied to the through portion formed in the resist mask. This facilitates formation of the cutting line 13 penetrating the vapor deposition mask intermediate 10.

The direction orthogonal to the width direction DW of the band-shaped portion 11 is the longitudinal direction DL of the band-shaped portion 11. In the example shown in fig. 1, the belt-like portion 11 includes 3 mask portions 11 a. The 3 mask portions 11a are arranged at intervals in the longitudinal direction DL. The 3 mask portions 11a form one mask portion group. The peripheral portion 11b has a ladder shape surrounding the 3 mask portions 11 a. In the longitudinal direction DL, a part of the peripheral portion 11b is located between the 2 mask portions 11 a. The belt-shaped portion 11 may include 2 or less mask portions 11a, and may include 4 or more mask portions 11 a.

The edge 11E of the band-shaped portion 11 has a rectangular shape defined by a pair of short sides 11ES and a pair of long sides 11 EL. The edge 11E of the belt-like portion 11 includes a pair of short sides 11ES extending in the width direction DW of the belt-like portion 11. Each short side 11ES has a notch 11EC recessed toward the other short side 11 ES. At the edge 11E of the band-shaped portion 11, each long side 11EL extends along the long side direction DL.

The metal sheet for forming the vapor deposition mask is etched to form the vapor deposition mask intermediate 10 including the belt-shaped portions 11, the frame-shaped portions 12, the cutting lines 13, and the half etching lines 14. The metal sheet is, for example, a sheet made of an iron-nickel alloy. The iron-nickel alloy forming the metal sheet may be, for example, invar.

Fig. 2 shows a first example of the shape of the notch 11EC, and fig. 3 shows a second example of the shape of the notch 11 EC. In fig. 2 and 3, as in fig. 1, the cutting line 13 is indicated by a thick line, and the half etching line 14 is indicated by a dot.

As shown in fig. 2, in the first example of the slit 11EC, the slit 11EC is formed by a bent portion EC1 and a pair of linear portions EC2 extending in the longitudinal direction DL from the bent portion EC 1. The pair of linear portions EC2 are arranged at intervals in the width direction DW. The pair of linear portions EC2 are connected to each end of the bent portion EC1 by 1 piece. The curved portion EC1 has an arc shape that is concave in a direction from the notch 11EC including the curved portion EC1 toward the other notch 11 EC.

The first edge 11E1 of the band 11 includes a notch 11 EC. In this example, in the longitudinal direction DL, the portion of each long side 11EL from a portion distant from each end of the mask portion group to the end of the long side 11EL is included in the second edge 11E 2. The portion of each short side 11ES other than the notch 11EC is included in the second edge 11E 2. Half etch line 14 has a shape along second edge 11E 2.

That is, in this example, the second edge 11E2 includes a corner ECN formed by the short side 11ES and the long side 11 EL. Half-etched line 14 includes a portion having an L-shape along corner ECN. One half etching line 14 is present at each position corresponding to each corner ECN.

As shown in fig. 3, the second example of the notch 11EC has a substantially parabolic shape. A second example of the notch 11EC is formed by a pair of curved portions EC 3. The pair of curved portions EC3 pass through the bottom of the notch 11EC and have shapes symmetrical to each other with respect to a straight line extending in the longitudinal direction DL. Each curved portion EC3 extends in a direction intersecting the longitudinal direction DL. In the second example of the notch 11EC, the entirety of the notch 11EC is a curved portion.

The first edge 11E1 of the band 11 includes a notch 11 EC. In this example, as in the first example, the portion of each long side 11EL from a portion distant from each end of the mask portion group to the end of the long side 11EL in the long side direction DL is included in the second edge 11E 2. Half etch line 14 has a shape along second edge 11E 2. The cut 11EC is separated from the frame-shaped portion 12 by the cutting line 13.

The vapor deposition mask formed by the strip-shaped portion 11 by cutting the strip-shaped portion 11 from the frame-shaped portion 12 is attached to a frame that supports the vapor deposition mask when the vapor deposition mask is used. In this case, in order to suppress the generation of wrinkles in the vapor deposition mask, the vapor deposition mask is attached to the frame while pulling each short side of the edges of the vapor deposition mask in a direction away from the other short side. When the cut line of the half etching line 14 is located at the notch 11EC of the short side 11ES of the edge 11E of the belt-shaped portion 11, a wrinkle due to the cut line is likely to occur in the vapor deposition mask. In this regard, according to the vapor deposition mask intermediate 10 described above, since the cutting lines of the half etching lines 14 are not located in the cutouts 11EC, the occurrence of wrinkles in the vapor deposition mask can be suppressed when the vapor deposition mask is used.

Further, since the corner portion ECN included in the edge 11E of the belt-shaped portion 11 is connected to the frame-shaped portion 12 by the half etching line 14, it is possible to suppress the corner portion ECN at the edge 11E of the belt-shaped portion 11 from floating from the frame-shaped portion 12 compared to other portions in the belt-shaped portion 11 when the vapor deposition mask intermediate 10 is conveyed. This can prevent the corner ECN from hitting against a member provided in a device or the like provided around the vapor deposition mask intermediate 10 when the vapor deposition mask intermediate 10 is transported. As a result, deformation of the band-shaped portion 11 can be suppressed.

Fig. 4 shows a sectional configuration along the line IV-IV in fig. 1, and fig. 5 shows a sectional configuration along the line V-V in fig. 1. That is, fig. 4 and 5 show a cross-sectional structure of the vapor deposition mask intermediate 10 perpendicular to the plane in which the vapor deposition mask intermediate 10 extends and along the width direction DW. Fig. 4 shows a cross-sectional structure in a case where half-etching is continuously performed on the half-etching line 14. The half etching line 14 on which the half etching process is continuously performed is a first example of the half etching line 14.

As shown in fig. 4, the half etching line 14 connects a part of the frame-like portion 12 and a part of the peripheral portion 11b of the belt-like portion 11 to each other. The frame-shaped portion 12 and the belt-shaped portion 11 have a first plate thickness T1. On the other hand, the half etching line 14 has a second plate thickness T2, and the second plate thickness T2 is thinner than the first plate thickness T1. The first plate thickness T1 is, for example, 10 μm to 30 μm. The second plate thickness T2 is, for example, 3 μm to 20 μm.

In the half etching line 14, a direction orthogonal to a direction in which the half etching line 14 extends is a width direction of the half etching line 14 when viewed from a direction facing a plane in which the vapor deposition mask intermediate 10 spreads. The width W of the half etching line 14 is, for example, 40 μm to 120 μm. The half etching line 14 has a rectangular shape in cross section. The half etching line 14 has a rectangular cross section and continues in the extending direction.

The half etching line 14 may have one or more through portions arranged along the direction in which the half etching line 14 extends. The penetration portion penetrates the vapor deposition mask intermediate 10 in the thickness direction of the vapor deposition mask intermediate 10. In this case, the half etching line 14 is easily cut by the amount of the through portion along the direction in which the half etching line 14 extends.

A half etching line 14 having a plurality of through portions is a second example of the half etching line 14. Fig. 5 shows a cross-sectional structure in the case where half etching line 14 has a plurality of through portions.

As shown in fig. 5, the half etching line 14 has a plurality of through portions 14H located inside the half etching line 14. The plurality of through portions 14H are arranged at intervals along the direction in which the half etching lines 14 extend. The plurality of through-holes 14H may be arranged し at equal intervals, and the interval between the through-holes 14H may include a plurality of lengths.

Further, the edge of the through portion 14H may be rounded when viewed from a direction facing the plane in which the vapor deposition mask intermediate 10 spreads. In this case, the diameter of the through portion 14H is, for example, 20 μm to 60 μm. When the plurality of through holes 14H are arranged at equal intervals, the interval between the through holes 14H may be, for example, 200 μm to 500 μm.

Fig. 6 and 7 show a cross-sectional structure of the mask portion 11a along a plane orthogonal to the plane in which the vapor deposition mask intermediate 10 spreads and extending in the longitudinal direction DL. Fig. 6 shows a cross-sectional structure of a first example of the mask portion 11 a. On the other hand, fig. 7 shows a cross-sectional structure of a second example of the mask portion 11 a.

As shown in fig. 6, the vapor deposition mask intermediate 10 includes a front surface 10F and a back surface 10R that is the surface opposite to the front surface 10F. The surface 10F faces a vapor deposition source of the vapor deposition device in a state where the vapor deposition mask is attached to the vapor deposition device. The rear surface 10R faces a vapor deposition target such as a glass substrate in a state where the vapor deposition mask is attached to the vapor deposition device. The mask portion 11a has a plurality of mask holes 11H penetrating the vapor deposition mask intermediate 10. The wall surfaces of the mask holes 11H are inclined with respect to the thickness direction of the vapor deposition mask intermediate 10 in cross section. The shape of the wall surface of the mask hole 11H is a semicircular arc shape protruding outward of the mask hole 11H in cross section. In other words, the mask holes 11H have a semicircular arc shape protruding from the front surface 10F to the rear surface 10R in cross section. The shape of the wall surface of the mask hole 11H may be a complicated curved shape having a plurality of bending points in cross section.

The thickness of the mask portion 11a may be, for example, 10 μm or less. With such a thin mask portion 11a, the area itself of the wall surface of the mask hole 11H can be reduced, and the distance of the vapor deposition substance scattering in the mask hole 11H is short because the thickness of the vapor deposition mask intermediate 10 is thin. This can reduce the amount of the vapor deposition material adhering to the wall surfaces of the mask holes 11H. In the vapor deposition mask intermediate 10, the thickness of the portions other than the mask portion 11a is, for example, 25 μm or less. In the vapor deposition mask intermediate 10, the thickness of the portion other than the mask portion 11a is equal to the thickness of the metal sheet before processing, that is, the thickness of the metal sheet before the strip portion 11, the frame portion 12, the cutting line 13, and the half etching line 14 are formed.

The surface 10F includes a first opening H1 as an opening of the mask hole 11H. The back surface 10R includes a second opening H2 as an opening of the mask hole 11H. The first opening H1 is larger than the second opening H2 in a plan view facing the surface 10F. Each mask hole 11H is a passage through which the vapor deposition material sublimated from the vapor deposition source passes. The evaporation material sublimated from the evaporation source enters from the first opening H1 toward the second opening H2. In the mask holes 11H, since the first openings H1 are larger than the second openings H2, the amount of the vapor deposition substance entering the mask holes 11H from the first openings H1 can be increased. The area of the mask holes 11H in the cross section along the front surface 10F may increase monotonically from the second opening H2 to the first opening H1 from the second opening H2 toward the first opening H1, or may have a substantially constant portion in the middle of the cross section from the second opening H2 to the first opening H1.

As shown in fig. 7, the mask hole 11H is formed of a large hole 11LH having a first opening H1 and a small hole 11SH having a second opening H2. The first opening H1 is larger than the second opening H2 in a plan view facing the surface 10F. The cross-sectional area of the large hole 11LH monotonically decreases from the first opening H1 toward the back face 10R. The sectional area of the small hole 11SH decreases monotonously from the second opening H2 toward the surface 10F. The wall surfaces of the mask holes 11H have a shape protruding inward of the mask holes 11H at a portion where the large holes 11LH and the small holes 11SH are connected, that is, at the middle in the thickness direction of the vapor deposition mask intermediate 10, in cross section. The distance between the portion protruding from the wall surface of the mask hole 11H and the rear surface 10R is the step height SH.

In the first example of the mask portion 11a, the step height SH is zero. From the viewpoint of securing the amount of the vapor deposition substance reaching the second openings H2, the step height SH is preferably zero. In the case of the first example in which the strap-shaped portion 11 includes the mask portion 11a, the thickness of the metal sheet before processing is so thin that the mask holes 11H are formed by wet etching the metal sheet from one side. The thickness of the metal sheet before processing is, for example, 25 μm or less as described above. In the case of the second example in which the belt-shaped portion 11 includes the mask portion 11a, the thickness of the mask portion 11a is, for example, 25 μm or less. In this case, the thickness of the metal sheet before processing is, for example, 50 μm or less.

[ vapor deposition mask ]

The vapor deposition mask will be described with reference to fig. 8 to 10.

As shown in fig. 8, the mask device 20 includes a frame 21 and a plurality of vapor deposition masks 31. In the example shown in fig. 8, the mask device 20 includes 2 vapor deposition masks 31, but the mask device 20 may include one vapor deposition mask 31, and may include 3 or more vapor deposition masks 31. The frame 21 has a rectangular frame shape capable of supporting the plurality of vapor deposition masks 31. The frame 21 is attached to a vapor deposition device for performing vapor deposition. The frame 21 has a frame hole 21H penetrating the frame 21 over almost the entire area where each vapor deposition mask 31 is located.

Each vapor deposition mask 31 includes a mask portion 31a, a peripheral portion 31b, and an edge 31E. The mask portion 31a has a plurality of mask holes 31H. The peripheral portion 31b surrounds the mask portion 31 a. The edge 31E has a rectangular shape. In the present embodiment, the vapor deposition mask 31 includes 3 mask portions 31 a. The 3 mask portions 31a are arranged at intervals in the longitudinal direction of the vapor deposition mask 31. The vapor deposition mask 31 may include 2 or less mask portions 31a, and may include 4 or more mask portions 31 a. In the vapor deposition mask 31, the mask portion 31a corresponds to the mask portion 11a of the strip portion 11, the peripheral portion 31b corresponds to the peripheral portion 11b of the strip portion 11, and the edge 31E corresponds to the edge 11E of the strip portion 11. The mask holes 31H of the mask portion 31a correspond to the mask holes 11H of the mask portion 11 a.

The edge 31E of the vapor deposition mask 31 is constituted by a first edge 31E1 and a second edge 31E 2. The first edge 31E1 includes a portion located in the width direction of the vapor deposition mask 31 with respect to the mask portion 31 a. The vapor deposition mask 31 further includes a cut line located at the second edge 31E 2. A first edge 31E1 of edge 31E corresponds to a first edge 11E1 that edge 11E of band 11 has, and a second edge 31E2 of edge 31E corresponds to a second edge 11E2 that edge 11E of band 11 has.

Each vapor deposition mask 31 has a strip shape extending in one direction. In the peripheral portion 31b of each vapor deposition mask 31, a pair of portions sandwiching the plurality of mask portions 31a in the direction in which the vapor deposition mask 31 extends is fixed to the frame 21. The vapor deposition mask 31 is fixed to the frame 21 by adhesion, welding, or the like.

Fig. 9 and 10 show the area a shown in fig. 8 in an enlarged manner. The region a includes a part of the cutting mark of the vapor deposition mask 31. Fig. 9 shows a cut line in a case where the vapor deposition mask intermediate 10 has the first example of the half etching line 14. On the other hand, fig. 10 shows a cut line in the case of the second example in which the vapor deposition mask intermediate 10 has the half etching line 14.

As shown in fig. 9, the cut mark E21 is located at the second edge 31E2 of the edge 31E of the vapor deposition mask 31. The cut line E21 corresponds to the half etching line 14 described above. The cut line E21 is a curved portion in which a part of the half etching line 14 is curved toward the surface of the vapor deposition mask 31. The bent portion is formed by the half etching line 14 being rolled up toward the surface of the belt-shaped portion 11 when the belt-shaped portion 11 is cut from the frame-shaped portion 12.

As shown in fig. 10, in the case of the second example in which the vapor deposition mask intermediate 10 includes the half etching line 14, the cut line E22 is also located at the second edge 31E2 of the edge 31E of the vapor deposition mask 31. The cut line E22 is formed by a plurality of recesses E22a having an arc shape and a plurality of bent portions E22 b. In each of the cut marks E22, the recesses E22a and the bent portions E22b are alternately arranged. The bent portion E22b is a portion of the half etching line 14 that is bent toward the surface of the vapor deposition mask 31 except for the through portion 14H. The bent portion E22b is formed by a part of the half etching line 14 being rolled up toward the surface of the belt-shaped portion 11 when the belt-shaped portion 11 is cut from the frame-shaped portion 12. The recess E22a included in the cut line E22 corresponds to the through portion 14H of the half etching line 14. On the other hand, the bent portion E22b included in the cut trace E22 corresponds to a portion of the half etching line 14 other than the through portion 14H.

In addition, as in the above-described cut marks E21 and E22, when the cut marks E21 and E22 have a bent portion, the bent portion is preferably bent toward the surface including the first opening H1 in the vapor deposition mask 31. Thus, even if the cut marks E21 and E22 have bent portions, the vapor deposition mask 31 can be prevented from floating from the frame 21 by the amount corresponding to the bent portions.

As described above, according to one embodiment of the vapor deposition mask intermediate and the vapor deposition mask, the following effects can be obtained.

(1) Since the connecting portion of the frame-shaped portion 12 to the belt-shaped portion 11 can be cut with a smaller force, the belt-shaped portion 11 can be easily cut out from the frame-shaped portion 12 at the time of manufacturing the vapor deposition mask 31. On the other hand, when the vapor deposition mask intermediate 10 is transported, the connection between the belt-shaped portion 11 and the frame-shaped portion 12 can be secured by the half etching line 14 that divides the second edge 11E2 of the edges 11E of the belt-shaped portion 11 from the frame-shaped portion 12.

(2) When the half etching line 14 has the through portion 14H, the half etching line 14 is easily cut in the direction in which the half etching line 14 extends.

(3) When the cutting marks E21 and E22 of the half etching lines 14 are not located in the notches 11EC, the vapor deposition mask 31 can be prevented from being wrinkled during use of the vapor deposition mask 31.

(4) The corner ECN at the edge 11E of the band-shaped portion 11 can be suppressed from floating from the frame-shaped portion 12 compared to the other portions of the band-shaped portion 11. This can prevent the corner ECN from catching on a member provided in a device or the like provided around the vapor deposition mask intermediate 10 when the vapor deposition mask intermediate 10 is transported. As a result, deformation of the band-shaped portion 11 can be suppressed.

The above-described embodiment can be modified and implemented as follows.

[ Linear weak part ]

The frame-shaped portion 12 may include a linear fragile portion described below with reference to fig. 11 to 15.

As shown in fig. 11, the frame-shaped portion 12 may include a linear fragile portion 12A extending in a direction from the cutting line 13 toward the outer edge 12D of the frame-shaped portion 12. In the example shown in fig. 11, the linear fragile portion 12A extends in a direction intersecting the longitudinal direction DL. One end of the linear fragile portion 12A is located at the cutting line 13, and the other end of the linear fragile portion 12A is located inside the frame-shaped portion 12.

The vapor deposition mask intermediate 10 includes a plurality of linear fragile portions 12A. The plurality of linear fragile portions 12A include an upstream fragile portion 12AU located upstream of the mask portion 11a in the transport direction of the vapor deposition mask intermediate 10 and a downstream fragile portion 12AD located downstream of the mask portion 11 a. The upstream side of the mask portion 11a means the front side of the mask portion 11a in the transport direction of the vapor deposition mask intermediate 10. The downstream side of the mask portion 11a means the rear side of the mask portion 11a in the transport direction of the vapor deposition mask intermediate 10.

In the upstream fragile portion 12AU, one end portion of the upstream fragile portion 12AU is connected to a portion of the cutting line 13 located upstream of the mask portion group. On the other hand, in the downstream weak portion 12AD, one end of the downstream weak portion 12AD is connected to a portion of the cutting line 13 located downstream of the mask portion group.

The vapor deposition mask intermediate 10 has 2 upstream-side fragile portions 12AU and 2 downstream-side fragile portions 12AD between 2 bands 11 in the width direction DW. The 2 upstream fragile portions 12AU are arranged in the width direction DW and extend from the frame portion 12 toward the cutting line 13 along mutually different portions of the strip portion 11. The 2 downstream fragile portions 12AD are arranged in the width direction DW, and extend from the frame portion 12 toward the cutting line 13 along mutually different portions of the band portion 11.

The vapor deposition mask intermediate 10 has a pair of upstream fragile portions 12AU that sandwich the 2 belt-shaped portions 11 in the width direction DW, and a pair of downstream fragile portions 12AD that sandwich the 2 belt-shaped portions 11 in the width direction DW. The vapor deposition mask intermediate 10 may include at least one of the linear fragile portions 12A.

The linear fragile portion 12A has a lower mechanical strength than the portion of the frame-shaped portion 12 other than the linear fragile portion 12A. Therefore, the frame-shaped portion 12 is easily cut along the linear fragile portion 12A. Further, since one end of the linear fragile portion 12A is positioned at the cutting line 13, the loop formed by the frame portion 12 can be cut when the band portion 11 is removed from the frame portion 12. This facilitates cutting of the half etching line 14.

When forming the vapor deposition mask from the belt-like portion 11, the vapor deposition mask intermediate 10 is first cut at a predetermined position in the longitudinal direction DL along the width direction DW. Thereby, the vapor deposition mask intermediate 10 having only the 2 belt-shaped portions 11 arranged in the width direction DW was obtained. Next, the frame-shaped portion 12 is cut along the linear fragile portion 12A, thereby cutting the ring surrounding the frame-shaped portion 12 of the band-shaped portion 11. Then, the band-shaped portion 11 is cut from the frame portion 12 by cutting the half etching line 14. This enables the vapor deposition mask to be formed by the belt-shaped portion 11.

Fig. 12 shows an area B shown in fig. 11 in an enlarged manner, and fig. 13 shows an area C shown in fig. 11 in an enlarged manner. In addition, the region B includes the upstream end portion of the 2 upstream side fragile portions 12AU, and the region C includes the downstream end portion of the 2 downstream side fragile portions 12 AD. Fig. 14 and 15 show the region D shown in fig. 11 in an enlarged manner.

As shown in fig. 12, the upstream end of each upstream fragile portion 12AU is connected to an upstream through portion 12BU penetrating the frame-shaped portion 12. The 2 upstream side through portions 12BU are arranged at predetermined intervals in the width direction DW. When the vapor deposition mask 31 is formed by the belt-like portions 11, for example, a portion of the frame-like portion 12 sandwiched between the 2 upstream-side through portions 12BU in the width direction DW is cut by a tool capable of cutting the frame-like portion 12, thereby forming cut pieces. Then, by pulling up the cut piece in a direction intersecting the plane in which the vapor deposition mask intermediate 10 spreads, a force that cuts off the 2 upstream fragile portions 12AU can be simultaneously applied to the 2 upstream fragile portions 12 AU.

Further, in each of the pair of upstream fragile portions 12AU sandwiching the 2 band-shaped portions 11 in the width direction DW, the upstream end portion is also connected to the upstream through portion 12 BU. Another upstream side through portion 12BU is formed in a pair with the upstream side through portion 12 BU.

As shown in fig. 13, the frame portion 12 includes a gripped piece 12C connected to the downstream end of the 2 downstream fragile portions 12AD, and a downstream through portion 12BD surrounding the gripped piece 12C. Thus, the gripped piece 12C connected to the downstream end portion of the downstream fragile portion 12AD can be gripped by an instrument or held by a human finger, and therefore a force that cuts the downstream fragile portion 12AD can be easily applied to the downstream fragile portion 12 AD. By pulling up the grip piece 12C in a direction intersecting the plane in which the vapor deposition mask intermediate 10 spreads, a force that cuts the 2 downstream fragile portions 12AD can be simultaneously applied to the 2 downstream fragile portions 12 AD.

In each of the pair of downstream fragile portions 12AD sandwiching the 2 band-shaped portions 11 in the width direction DW, the downstream end portion is also connected to the gripped piece 12C, and the gripped piece 12C is surrounded by the downstream through portion 12 BD. The gripped piece 12C is connected to a downstream end portion of the one downstream fragile portion 12 AD.

As shown in fig. 14, the cut line 13 may include a protruding portion 13A that protrudes in a direction away from the belt-shaped portion 11 when viewed from a direction facing the surface 10F of the vapor deposition mask intermediate 10, and the belt-shaped portion 11 may be separated from the frame portion 12 by the cut line 13. The protrusion 13A has a rectangular shape when viewed from a direction facing the surface 10F of the vapor deposition mask intermediate 10. The protruding portion 13A is located upstream of the boundary between the cutting line 13 and the half etching line 14 in the longitudinal direction DL. The upstream end of the downstream fragile portion 12AD is connected to the projection 13A in the cutting line 13. The upstream end of the downstream fragile portion 12AD can be connected to the middle of the most downstream side of the protruding portion 13A from one end to the other end. The upstream end of the downstream fragile portion 12AD may be connected to an end of the most downstream side of the protruding portion 13A having the largest distance from the band portion 11.

Since the cutting line 13 has the protruding portion 13A and the downstream side weak portion 12AD is connected to the protruding portion 13A, when the frame-shaped portion 12 is cut along the downstream side weak portion 12AD, it is possible to suppress an external force for cutting the frame-shaped portion 12 from acting on the belt-shaped portion 11. This can suppress the external force from acting on the mask portion 11a of the band portion 11. Further, the downstream fragile portion 12AD is easily cut by a portion of the upstream end portion located outside one end and the other end of the most downstream side edge of the protruding portion 13A.

The cutting line 13 is not limited to the position at which each downstream fragile portion 12AD is connected, and may have the protruding portion 13A at the position at which each upstream fragile portion 12AU is connected, whereby effects corresponding to the effects of the protruding portion 13A described above can be obtained.

As shown in fig. 15, the projection 13A may project from the boundary between the cut line 13 and the half etching line 14 in a direction away from the belt-shaped portion 11 when viewed from the direction facing the surface 10F of the vapor deposition mask intermediate 10, and the belt-shaped portion 11 may be separated from the frame-shaped portion 12 by the cut line 13. In this case, the upstream end of the downstream fragile portion 12AD may be connected to the middle of the edge located on the most downstream side of the protruding portion 13A from one end to the other end. The upstream end of the downstream fragile portion 12AD may be connected to an end of the most downstream side of the protruding portion 13A having the largest distance from the band portion 11. Therefore, according to the protruding portion 13A, an effect corresponding to the protruding portion 13A described earlier with reference to fig. 14 can be obtained.

The cutting line 13 may have the protruding portion 13A at a position connected to each of the upstream fragile portions 12AU, not only at a position connected to each of the downstream fragile portions 12AD, but also at a position connected to each of the upstream fragile portions 12AU, whereby effects corresponding to the effects of the protruding portion 13A described above with reference to fig. 14 can be obtained.

In the example shown in fig. 12 to 15, the linear fragile portion 12A includes a plurality of through portions 12A1 arranged at intervals. The penetration portion 12a1 penetrates the vapor deposition mask intermediate 10 in the thickness direction of the vapor deposition mask intermediate 10. Instead, the linear fragile portion 12A may be formed by one half-etched portion having a linear shape, or may have a plurality of half-etched portions arranged at intervals in a direction in which the linear fragile portion 12A extends. Alternatively, in the linear fragile portion 12A, the linear half-etched portion may include a plurality of through portions arranged at intervals in a direction in which the half-etched portion extends.

The upstream through-portion 12BU to which the upstream end of the upstream fragile portion 12AU is connected may be changed to a gripped piece 12C to which the downstream fragile portion 12AD is connected and a downstream through-portion 12BD surrounding the gripped piece 12C. Alternatively, the gripped piece 12C connected to the downstream end of the downstream fragile portion 12AD and the downstream through-portion 12BD surrounding the gripped piece 12C may be changed to an upstream through-portion 12BU connected to the upstream end of the upstream fragile portion 12 AU.

The vapor deposition mask intermediate 10 including the linear fragile portions 12A can obtain the following effects.

(5) Since one end of the linear fragile portion 12A is continuous with the cutting line 13, the ring formed by the frame-shaped portion 12 can be cut when the band-shaped portion 11 is removed from the frame-shaped portion 12, and thus the half etching line 14 can be easily cut.

[ cutting line ]

As shown in fig. 16, the outer shape of the projection 13A may have a mesa shape when viewed from a direction facing the surface 10F of the intermediate mask blank 10. The upstream end of the downstream fragile portion 12AD is connected to the end of the most downstream side of the protruding portion 13A, which is the farthest from the band portion 11.

[ half etching line ]

The half etching line 14 may not include a portion having an L shape along the corner ECN of the edge 11E of the band-shaped portion 11. The half etching line 14 may have a straight line shape extending along the width direction DW, or may have a straight line shape extending along the longitudinal direction DL, for example. The half etching line 14 may include both a linear portion extending in the width direction DW and a linear portion extending in the longitudinal direction DL. In this case, the effect corresponding to (1) above can also be obtained by dividing the second edge 11E2 of the edges 11E of the band-shaped portion 11 from the frame-shaped portion 12 by the half etching line 14.

The half etching line 14 may be located between the notch 11EC in the edge 11E of the band portion 11 and the frame-shaped portion 12. That is, the notch 11EC in the edge 11E of the band-shaped portion 11 may be included in the second edge 11E 2. In this case, the effect corresponding to (1) above can also be obtained by dividing the second edge 11E2 of the edges 11E of the band-shaped portion 11 from the frame-shaped portion 12 by the half etching line 14.

In the half etching line 14, a plurality of half etching portions having the second plate thickness may be arranged at intervals along the direction in which the half etching line 14 extends. In this case, the non-etched portion having the first plate thickness is located between 2 half-etched portions adjacent to each other.

[ band-shaped part ]

As shown in fig. 17, in the vapor deposition mask intermediate 10, the region surrounded by the slit 11EC of the belt-shaped portion 11 may be the through portion 13H. In this case, the first edge 11E1 of the edges 11E of the frame-shaped portion 12 is separated from the frame-shaped portion 12 by the cutting line 13 and the through portion 13H. In the present modification, the cutting line 13 and the through portion 13H are separated from the first edge 11E1 and the frame portion 12.

The short side 11ES in the edge 11E of the band-shaped portion 11 may not have the notch 11 EC. In this case, the half etching line 14 can be located at any position between the short side 11ES and the frame portion 12. In this case, the effect corresponding to the above-described (1) can also be obtained by dividing the second edge 11E2 of the edges 11E of the strip-shaped portion 11 from the frame-shaped portion 12 by the half etching line 14.

[ intermediate vapor deposition mask ]

The vapor deposition mask intermediate may be formed of a mask base material including a metal sheet and a resin layer laminated on the metal sheet. In this case, the vapor deposition mask formed from the vapor deposition mask intermediate is also formed of a metal sheet and a resin layer. Alternatively, the vapor deposition mask intermediate may be formed of a mask base material having 2 metal sheets and a resin layer sandwiched between the 2 metal sheets in the thickness direction of the vapor deposition mask intermediate. In this case, the vapor deposition mask formed from the vapor deposition mask intermediate is also formed of 2 metal sheets and a resin layer sandwiched between the 2 metal sheets. In any of these cases, the synthetic resin forming the resin layer may be, for example, a polyimide resin. Further, the through-portions and the half-etched portions of the vapor deposition mask intermediate can be formed by irradiation of the resin layer with a laser beam.

The technical ideas derived from the above-described embodiment and modification are noted below.

[ Note 1] an intermediate for vapor deposition mask, comprising a belt-like portion and a frame-like portion surrounding the belt-like portion,

the belt-shaped part is provided with a mask part formed with a plurality of mask holes and a peripheral part surrounding the mask part,

the peripheral portion and the frame-shaped portion have a first plate thickness,

the first plate has a thickness of 10 to 30 μm,

the edges of the band include a first edge and a second edge,

the first edge includes a portion opposed to the mask portion in a width direction of the belt-shaped portion,

the first edge is separated from the frame-like portion by a separating portion,

the second edge and the frame-shaped portion are defined by linear half-etched portions formed by arranging a plurality of half-etched elements having a second plate thickness at intervals, and a non-etched portion having the first plate thickness is located between 2 adjacent half-etched elements in the linear half-etched portion.

According to the remarks described above, since the first plate thickness of the peripheral portion and the frame-shaped portion connected to each other by the linear half-etched portion is 10 μm or more and 30 μm or less, the cuttability of the strip-shaped portion can be sufficiently improved by the plurality of half-etched members arranged at intervals in the linear half-etched portion. Further, since the peripheral portion and the frame portion are connected by the half-etched portion and the non-etched portion, even if the peripheral portion and the frame portion are extremely thin, the connection between the peripheral portion and the frame portion can be secured during the transportation of the vapor deposition mask intermediate.

Claims

1. An intermediate for vapor deposition mask, characterized in that,

comprises a band-shaped part and a frame-shaped part surrounding the band-shaped part,

the belt-shaped portion includes:

a mask portion formed with a plurality of mask holes; and

a peripheral portion surrounding the mask portion,

the edges of the band include a first edge and a second edge,

a separating portion which is separated from the frame-shaped portion from the first edge, which is located between the first edge and the frame-shaped portion,

and a linear half-etched portion having a second plate thickness thinner than the first plate thickness and located between the second edge and the frame-shaped portion.

2. The vapor deposition mask intermediate according to claim 1,

the linear half-etching portion has one or more through portions arranged along a direction in which the linear half-etching portion extends, and the through portions penetrate the vapor deposition mask intermediate in a thickness direction thereof.

3. The vapor deposition mask intermediate according to claim 1,

the edge of the belt-shaped portion includes a pair of short sides extending in the width direction of the belt-shaped portion, each short side having a cutout depressed toward the other short side,

the first edge of the band includes the notch.

4. The vapor deposition mask intermediate according to claim 3,

the edge of the band-shaped portion has a rectangular shape divided by the pair of short sides and the pair of long sides,

the second edge comprises a corner formed by the short side and the long side,

the linear half-etched portion includes an L-shaped portion along the corner portion.

5. The evaporation mask intermediate according to any one of claims 1 to 4,

the frame-shaped portion includes:

an outer edge; and

has a linear fragile portion extending from the separating portion toward the outer side edge,

the mechanical strength of the weak portion is lower than that of a portion other than the weak portion in the frame-like portion.

6. A vapor deposition mask comprising a mask portion having a plurality of mask holes formed therein, a peripheral portion surrounding the mask portion, and a strip-shaped edge,

the edges include a first edge and a second edge,

the first edge includes a portion facing the mask portion in a width direction of the vapor deposition mask,

the vapor deposition mask further includes a cut line located at the second edge.