TW202122607A - Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask - Google Patents
Vapor deposition mask intermediate, vapor deposition mask, and method for manufacturing vapor deposition mask Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
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Abstract
Description
本發明係關於蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法。The present invention relates to a vapor deposition mask intermediate, a vapor deposition mask, and a manufacturing method of the vapor deposition mask.
在使用卷對卷(roll-to-roll)方式之蒸鍍遮罩的製造中,於從捲出輥朝捲取輥搬送金屬片之期間,對金屬片進行蝕刻等的各種處理。在蒸鍍遮罩的製造過程中,從金屬片形成蒸鍍遮罩中間體。蒸鍍遮罩中間體係具備有例如用以形成蒸鍍遮罩之帶狀部、和包圍帶狀部之框狀部。帶狀部的邊緣係包含︰沿著金屬片的搬送方向延伸之長邊、和沿著金屬片的寬度方向延伸之短邊。長邊係從框狀部被切斷、即分離,另一方面,短邊係藉由打孔線連接至框狀部。透過切斷打孔線以使帶狀部從框狀部被切斷,藉此從帶狀部形成蒸鍍遮罩(例如,參照專利文獻1)。 [先前技術文獻] [專利文獻]In the manufacture of a vapor deposition mask using a roll-to-roll method, various treatments such as etching are performed on the metal sheet while the metal sheet is conveyed from the unwinding roll to the winding roll. In the manufacturing process of the vapor deposition mask, the vapor deposition mask intermediate body is formed from the metal sheet. The vapor deposition mask intermediate system includes, for example, a belt-shaped part for forming the vapor deposition mask and a frame-shaped part surrounding the belt-shaped part. The edge of the belt-shaped portion includes a long side extending along the conveying direction of the metal sheet, and a short side extending along the width direction of the metal sheet. The long side is cut off, that is, separated from the frame-shaped portion, on the other hand, the short side is connected to the frame-shaped portion by a perforated wire. The strip-shaped portion is cut from the frame-shaped portion by cutting the perforated line, thereby forming a vapor deposition mask from the strip-shaped portion (for example, refer to Patent Document 1). [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本特開2015-55007號公報[Patent Document 1] JP 2015-55007 A
[發明欲解決之課題][The problem to be solved by the invention]
在將帶狀部從框狀部切斷之工序中,在蒸鍍遮罩中間體,係於帶狀部與框狀部的邊界,賦予切斷用的外力。在抑制帶狀部變形的觀點上,賦予至帶狀部與框狀部的邊界之外力係以足夠小較佳。另一方面,若用以自帶狀部切斷框狀部所需的外力過小時,則會因為進行蒸鍍遮罩中間體的搬送時作用於帶狀部的外力而造成帶狀部從框狀部被切斷。於是,在蒸鍍遮罩中間體,於進行蒸鍍遮罩中間體的搬送時,於確保帶狀部與框狀部的連接且從帶狀部得到蒸鍍遮罩時,期望帶狀部的切斷、亦即從框狀部切離帶狀部是容易的。In the step of cutting the band-shaped portion from the frame-shaped portion, the vapor deposition mask intermediate body is tied to the boundary between the band-shaped portion and the frame-shaped portion, and an external force for cutting is applied. From the viewpoint of suppressing deformation of the band-shaped portion, it is preferable that the force applied to the boundary between the band-shaped portion and the frame-shaped portion be sufficiently small. On the other hand, if the external force required to cut the frame-shaped portion from the ribbon-shaped portion is too small, the external force acting on the ribbon-shaped portion during the transportation of the vapor deposition mask intermediate body will cause the ribbon-shaped portion to separate from the frame. The shape is cut off. Therefore, in the vapor deposition mask intermediate body, when the vapor deposition mask intermediate body is transported, it is desirable to ensure the connection between the strip portion and the frame portion and obtain the vapor deposition mask from the strip portion. It is easy to cut, that is, to cut away the band-shaped portion from the frame-shaped portion.
本發明之目的在提供一種於進行蒸鍍遮罩中間體的搬送時,可確保帶狀部與框狀部的連接,且於進行蒸鍍遮罩的製造時,可容易進行帶狀部的切斷之蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法。 [用以解決課題之手段]The object of the present invention is to provide a method that can ensure the connection between the belt-shaped part and the frame-shaped part during the transportation of the vapor deposition mask intermediate body, and can easily cut the belt-shaped part when the vapor deposition mask is manufactured. Broken vapor deposition mask intermediate, vapor deposition mask and manufacturing method of vapor deposition mask. [Means to solve the problem]
用以解決上述課題之蒸鍍遮罩中間體具備:帶狀部;及包圍前述帶狀部的框狀部。前述帶狀部具備:形成有複數個遮罩孔的遮罩部;及包圍前述遮罩部的周邊部。前述周邊部及前述框狀部具有第1板厚。前述帶狀部的邊緣包含第1邊緣和第2邊緣,前述第1邊緣係含有在前述帶狀部的寬度方向與前述遮罩部對向的部分;在前述第1邊緣與前述框狀部之間存在有將前述第1邊緣從前述框狀部分離的分離部,在前述第2邊緣與前述框狀部之間存在有具有比前述第1板厚還薄的第2板厚之線狀半蝕刻部。The vapor deposition mask intermediate body for solving the above-mentioned problems includes: a band-shaped part; and a frame-shaped part surrounding the band-shaped part. The belt-shaped portion includes: a mask portion in which a plurality of mask holes are formed; and a peripheral portion surrounding the mask portion. The peripheral portion and the frame-shaped portion have a first plate thickness. The edge of the band-shaped portion includes a first edge and a second edge, and the first edge includes a portion facing the mask portion in the width direction of the band-shaped portion; between the first edge and the frame-shaped portion There is a separating portion separating the first edge from the frame-shaped portion, and between the second edge and the frame-shaped portion, there is a linear half having a second plate thickness that is thinner than the first plate thickness. Etching department.
用以解決上述課題之蒸鍍遮罩係具備︰形成有複數個遮罩孔的遮罩部;包圍前述遮罩部的周邊部;及具有帶狀的邊緣。前述邊緣係包含第1邊緣和第2邊緣,前述第1邊緣係含有在前述蒸鍍遮罩的寬度方向與前述遮罩部對向的部分。蒸鍍遮罩進一步具備存在於前述第2邊緣之切斷痕。The vapor deposition mask for solving the above-mentioned problems includes: a mask portion formed with a plurality of mask holes; a peripheral portion surrounding the mask portion; and a band-shaped edge. The edge includes a first edge and a second edge, and the first edge includes a portion facing the mask portion in the width direction of the vapor deposition mask. The vapor deposition mask is further provided with cut marks existing on the second edge.
用以解決上述課題之蒸鍍遮罩的製造方法係包含︰在包含金屬片的遮罩基材形成帶狀部和框狀部;以及從前述框狀部切斷前述帶狀部,而從前述帶狀部形成蒸鍍遮罩。前述帶狀部和前述框狀部的形成方式如下︰具備前述帶狀部、及包圍前述帶狀部的框狀部;前述帶狀部具備︰形成有複數個遮罩孔的遮罩部;及包圍前述遮罩部的周邊部;前述周邊部及前述框狀部具有第1板厚,前述帶狀部的邊緣包含第1邊緣和第2邊緣,前述第1邊緣係含有在前述帶狀部的寬度方向與前述遮罩部對向的部分;在前述第1邊緣與前述框狀部之間存在有將前述第1邊緣從前述框狀部分離的分離部;在前述第2邊緣與前述框狀部之間存在有具有比前述第1板厚還薄的第2板厚之線狀半蝕刻部。A method of manufacturing a vapor deposition mask to solve the above-mentioned problems includes: forming a band-shaped portion and a frame-shaped portion on a mask base material including a metal sheet; and cutting the band-shaped portion from the frame-shaped portion, and then The belt-shaped part forms a vapor deposition mask. The strip-shaped portion and the frame-shaped portion are formed in the following manner: the strip-shaped portion is provided with a frame-shaped portion surrounding the strip-shaped portion; the strip-shaped portion is provided with a mask portion in which a plurality of mask holes are formed; and The peripheral portion surrounding the mask portion; the peripheral portion and the frame-shaped portion have a first plate thickness, the edge of the band-shaped portion includes a first edge and a second edge, and the first edge is included in the band-shaped portion The portion facing the mask portion in the width direction; between the first edge and the frame-shaped portion, there is a separating portion that separates the first edge from the frame-shaped portion; and the second edge is connected to the frame-shaped portion. Between the portions, there is a linear half-etched portion having a second plate thickness thinner than the aforementioned first plate thickness.
根據上述蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法,與帶狀部透過打孔線連接到框狀部的情況相比,在帶狀部與框狀部的連接部分之全體,可使該連接部分的厚度薄化。因此,與切斷打孔線的貫通部間之情況相比,能夠以更小的力切斷帶狀部與框狀部的連接部分。因此,在進行蒸鍍遮罩的製造時,將帶狀部從框狀部切離是容易的。另一方面,在進行蒸鍍遮罩中間體的搬送時,帶狀部與框狀部的連接係藉由線狀半蝕刻部所確保,該線狀半蝕刻部係將帶狀部的邊緣之第2邊緣自框狀部區分。According to the aforementioned vapor deposition mask intermediate, vapor deposition mask, and vapor deposition mask manufacturing method, compared with the case where the strip portion is connected to the frame portion through a perforation line, the gap between the strip portion and the frame portion The entire connection part can be made thinner. Therefore, it is possible to cut the connecting portion of the band-shaped portion and the frame-shaped portion with a smaller force than in the case of cutting between the penetrating portions of the perforated line. Therefore, when manufacturing the vapor deposition mask, it is easy to cut off the band-shaped portion from the frame-shaped portion. On the other hand, when the vapor deposition mask intermediate is transported, the connection between the strip-shaped portion and the frame-shaped portion is ensured by the linear half-etched portion that cuts the edge of the strip-shaped portion. The second edge is distinguished from the frame-shaped part.
在上述蒸鍍遮罩中間體中,前述線狀半蝕刻部亦可具有沿著前述線狀半蝕刻部延伸的方向排列之一個以上的貫通部,前述貫通部係在前述蒸鍍遮罩中間體的厚度方向貫通前述蒸鍍遮罩中間體。根據此蒸鍍遮罩中間體,按線狀半蝕刻部具有貫通部之程度,該半蝕刻部變得容易沿著線狀半蝕刻部延伸的方向被切斷。In the vapor deposition mask intermediate body, the linear half-etched portion may have one or more through portions arranged along the direction in which the linear half-etched portion extends, and the through portion is in the vapor deposition mask intermediate body. The thickness direction of φ penetrates through the aforementioned vapor deposition mask intermediate body. According to this vapor deposition mask intermediate body, the linear half-etched portion has a penetrating portion so that the half-etched portion can be easily cut along the direction in which the linear half-etched portion extends.
在上述蒸鍍遮罩中間體中,亦可為前述帶狀部的前述邊緣係包含沿著前述帶狀部的前述寬度方向延伸之一對短邊,各短邊具有朝另一前述短邊凹陷之缺口;在前述帶狀部的前述邊緣中,前述第1邊緣及前述缺口以外的部分之至少一部分為前述第2邊緣;前述半蝕刻線具有沿著前述第2邊緣之形狀,前述缺口係藉由前述分離部從前述框狀部分離。In the above-mentioned vapor deposition mask intermediate body, the edge of the band-shaped portion may include a pair of short sides extending along the width direction of the band-shaped portion, and each short side has a depression toward the other short side. The notch; in the edge of the band-shaped portion, at least a part of the first edge and the portion other than the notch is the second edge; the half-etched line has a shape along the second edge, and the notch is by It is separated from the frame-shaped portion by the separation portion.
藉由帶狀部從框狀部被切斷而由帶狀部形成的蒸鍍遮罩,係在使用蒸鍍遮罩時,被安裝於支持蒸鍍遮罩的框架。此時,為了抑制在蒸鍍遮罩產生皺摺,一邊將蒸鍍遮罩的邊緣中之一對短邊朝向自另一短邊分離的方向一邊拉引,一邊將蒸鍍遮罩安裝於框架。當在帶狀部的邊緣的短邊所具有的缺口存在有半蝕刻部的切斷痕時,會導致因切斷痕而形成的皺摺產生於蒸鍍遮罩。關於這點,根據上述蒸鍍遮罩中間體,由於半蝕刻部的切斷痕未存在於缺口,所以在使用蒸鍍遮罩時,可抑制在蒸鍍遮罩產生皺摺。The vapor deposition mask formed by the belt-shaped portion by cutting the belt-shaped portion from the frame-shaped portion is attached to a frame supporting the vapor deposition mask when the vapor deposition mask is used. At this time, in order to suppress the occurrence of wrinkles in the vapor deposition mask, the vapor deposition mask is attached to the frame while pulling one of the short sides of the vapor deposition mask in a direction separating from the other short side. . When there are cut marks of the half-etched portion in the notch on the short side of the edge of the band-shaped portion, wrinkles formed by the cut marks may be generated in the vapor deposition mask. In this regard, according to the above-mentioned vapor deposition mask intermediate body, since the cut marks of the half-etched portion do not exist in the notches, when the vapor deposition mask is used, it is possible to suppress the generation of wrinkles in the vapor deposition mask.
在上述蒸鍍遮罩中間體中,亦可為前述帶狀部的前述邊緣係具有藉由前述一對短邊和一對長邊所劃分之矩形,前述第2邊緣係包含藉由前述短邊和前述長邊所形成之角部,前述線狀半蝕刻部係包含沿著前述角部之具有L字狀的部分。In the vapor deposition mask intermediate body, the edge of the band-shaped portion may have a rectangle divided by the pair of short sides and a pair of long sides, and the second edge may include As for the corner formed by the long side, the linear half-etched portion includes an L-shaped portion along the corner.
根據上述蒸鍍遮罩中間體,由於包含於帶狀部的邊緣的角部係藉半蝕刻部連接於框狀部,所以在進行蒸鍍遮罩中間體的搬送時,可抑制帶狀部的邊緣的角部比帶狀部的其他部分更自框狀部浮起。藉此,在進行蒸鍍遮罩中間體的搬送時,可抑制角部勾卡在設置於蒸鍍遮罩中間體周圍的設備等之情況,可抑制帶狀部的變形。According to the vapor deposition mask intermediate body described above, since the corners included in the edge of the band-shaped portion are connected to the frame-shaped portion by the half-etched portion, when the vapor deposition mask intermediate body is transported, the band-shaped portion can be suppressed The corners of the edge float more from the frame-shaped part than the other parts of the band-shaped part. Thereby, when the vapor deposition mask intermediate body is transported, it is possible to prevent the corners from catching on equipment or the like provided around the vapor deposition mask intermediate body, and it is possible to suppress the deformation of the belt-shaped portion.
在上述蒸鍍遮罩中間體中,亦可為前述框狀部係具備從前述分離部朝前述外側邊緣延伸之具有線狀的脆弱部;前述脆弱部的機械強度係低於前述框狀部中之前述脆弱部以外的部分之機械強度。In the above-mentioned vapor deposition mask intermediate body, the frame-shaped portion may be provided with a linear fragile portion extending from the separation portion toward the outer edge; the mechanical strength of the fragile portion is lower than that of the frame-shaped portion The mechanical strength of parts other than the aforementioned fragile part.
根據上述蒸鍍遮罩中間體,脆弱部的機械強度,係比框狀部中之脆弱部以外的部分之機械強度還低,所以框狀部容易沿著脆弱部被切斷。而且,由於脆弱部中的一端部係與分離部相連,所以從框狀部卸下帶狀部時可將框狀部所形成的環切斷。藉此,變得容易進行半蝕刻部的切斷。 [發明之效果]According to the aforementioned vapor deposition mask intermediate body, the mechanical strength of the fragile portion is lower than the mechanical strength of the portion other than the fragile portion in the frame-shaped portion, so the frame-shaped portion is easily cut along the fragile portion. Furthermore, since one end of the fragile portion is connected to the separation portion, the loop formed by the frame portion can be cut when the strip portion is removed from the frame portion. This makes it easier to cut the half-etched part. [Effects of Invention]
根據本發明,在進行蒸鍍遮罩中間體的搬送時,確保帶狀部與框狀部的連接,且在進行蒸鍍遮罩的製造時,容易進行帶狀部的切斷。According to the present invention, when the vapor deposition mask intermediate body is transported, the connection between the strip-shaped portion and the frame-shaped portion is ensured, and the strip-shaped portion can be easily cut when the vapor deposition mask is manufactured.
[用以實施發明的形態][Form to implement the invention]
參照圖1至圖11,說明蒸鍍遮罩中間體、蒸鍍遮罩及蒸鍍遮罩的製造方法之一實施形態。以下,依序說明蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法。1 to 11, an embodiment of a method for manufacturing a vapor deposition mask intermediate body, a vapor deposition mask, and a vapor deposition mask will be described. Hereinafter, the manufacturing method of the vapor deposition mask intermediate body, the vapor deposition mask, and the vapor deposition mask will be described in order.
[蒸鍍遮罩中間體] 參照圖1至圖7,說明蒸鍍遮罩中間體。 圖1係顯示蒸鍍遮罩中間體之平面構造的一部分。圖1中,為了方便圖示,切斷線係藉由粗線顯示,半蝕刻線係藉由點(網點)顯示。[Intermediate of Evaporation Mask] 1 to FIG. 7, the vapor deposition mask intermediate body will be described. Figure 1 shows a part of the planar structure of the vapor deposition mask intermediate. In FIG. 1, for the convenience of illustration, the cut line is shown by thick lines, and the half-etched line is shown by dots (dots).
如圖1所示,蒸鍍遮罩中間體10具備有︰帶狀部11、和包圍帶狀部11的框狀部12。帶狀部11具備有︰形成有複數個遮罩孔11H的遮罩部11a;和包圍遮罩部11a的周邊部11b。周邊部11b及框狀部12具有第1板厚。帶狀部11的邊緣11E係由第1邊緣11E1和第2邊緣11E2所構成。第1邊緣11E1係包含相對於遮罩部11a之位於帶狀部11的寬度方向DW的部分。亦即,第1邊緣11E1係含有在帶狀部11的寬度方向DW上與遮罩部11a對向的部分。第1邊緣11E1與框狀部12係藉由切斷線13分離。切斷線13為分離部的一例。切斷線13係在蒸鍍遮罩中間體10的厚度方向貫通蒸鍍遮罩中間體10。第1邊緣11E1和框狀部12係藉由隔介切斷線13而彼此不連續。第2邊緣11E2和框狀部12係藉由具有比第1板厚還薄的第2板厚之線狀半蝕刻部(以下,半蝕刻線14)來區分。半蝕刻線14係將帶狀部11的第2邊緣11E2連接於框狀部12的一部分。As shown in FIG. 1, the vapor deposition mask
此外,半蝕刻線14係包含藉由半蝕刻加工所形成的部分,亦即藉由將用於形成蒸鍍遮罩中間體10的金屬片從金屬片的表面蝕刻至朝向背面的中途為止之加工所形成的部分。亦即,半蝕刻線14包含具有第2板厚的部分,且僅藉由具有第2板厚以下的厚度之部分而形成。又,半蝕刻線14係如以下所說明,亦可在半蝕刻線14的延伸方向,包含位於半蝕刻線14上之一個以上的貫通部。貫通部係在蒸鍍遮罩中間體10的厚度方向貫通蒸鍍遮罩中間體10。In addition, the half-etched
另一方面,切斷線13係具有線狀的切斷部。切斷線13係在蒸鍍遮罩中間體10的厚度方向貫通蒸鍍遮罩中間體10。上述之半蝕刻線14係包含將帶狀部11與框狀部12相互連接之部分,另一方面,切斷線13未包含使帶狀部11與框狀部12相互連接之部分。On the other hand, the cutting
與帶狀部11藉由打孔線連接於框狀部12的情況相比較,可在帶狀部11與框狀部12的連接部分的全體,使該連接部分的厚度變薄。因此,與將打孔線的貫通部間予以切斷的情況相比,可將帶狀部11與框狀部12的連接部分以更小的力切斷。所以,在蒸鍍遮罩的製造時,可容易從框狀部12將帶狀部11切離。另一方面,在進行蒸鍍遮罩中間體10的搬送時,框狀部12對帶狀部11的連接,係可藉由將帶狀部11的邊緣11E中之第2邊緣11E2自框狀部12區分之半蝕刻線14來確保。此外,打孔線係具備具有第1板厚的部分和貫通孔交替排列之構造。Compared with the case where the belt-shaped
此外,在帶狀部11的邊緣11E中之第1邊緣11E1與框狀部12之間未存在有半蝕刻線14。因此,與半蝕刻線14將第1邊緣11E1連接於框狀部12的情況相比,可加大半蝕刻線14與遮罩部11a之間的最短距離。因此,在切斷半蝕刻線14之際,施予半蝕刻線14的外力不易擴及到遮罩部11a。藉此,能夠抑制因半蝕刻線14的切斷所致遮罩部11a的變形,進而能夠抑制形成於遮罩部11a的遮罩孔11H變形。In addition, there is no half-etched
切斷線13的寬度,例如可為1mm以上2mm以下,也可為1.5mm左右。蒸鍍遮罩係使用卷對卷方式製造。因此,藉由切斷線13的寬度為2mm以下,進行蒸鍍遮罩中間體10的搬送時,可抑制框狀部12從帶狀部11分離超過切斷線13的寬度之情況。又,藉由切斷線13的寬度為1mm以上,在藉濕式蝕刻形成切斷線13之際,蝕刻液容易被供給到形成於阻劑遮罩(resist mask)的貫通部。藉此,容易形成貫通蒸鍍遮罩中間體10之切斷線13。The width of the cutting
與帶狀部11的寬度方向DW正交之方向為帶狀部11的長度方向DL。圖1所示的例子中,帶狀部11具備有三個遮罩部11a。三個遮罩部11a係沿長度方向DL隔著間隔排列。三個遮罩部11a形成了一個遮罩部群。又,周邊部11b具有包圍三個遮罩部11a的梯子狀。在長度方向DL,周邊部11b的一部分係位於兩個遮罩部11a之間。此外,帶狀部11可具備兩個以下的遮罩部11a,也可具備四個以上的遮罩部11a。The direction orthogonal to the width direction DW of the band-shaped
帶狀部11的邊緣11E係具有被一對短邊11ES、和一對長邊11EL所劃分的矩形。帶狀部11的邊緣11E包含有沿著帶狀部11的寬度方向DW延伸之一對短邊11ES。各短邊11ES係具有朝向另一短邊11ES凹陷之缺口11EC。在帶狀部11的邊緣11E,各長邊11EL係沿著長度方向DL延伸。The
用以形成蒸鍍遮罩的金屬片係藉由蝕刻,而形成具備帶狀部11、框狀部12、切斷線13及半蝕刻線14之蒸鍍遮罩中間體10。金屬片為例如鐵鎳合金製。形成金屬片的鐵鎳合金亦可為例如恆範鋼(invar)。The metal sheet used to form the vapor deposition mask is etched to form the vapor deposition mask
圖2係表示缺口11EC的形狀之第1例,圖3係表示缺口11EC的形狀之第2例。此外,圖2及圖3中亦與圖1同樣,切斷線13係藉由粗線顯示,半蝕刻線14係藉由點顯示。FIG. 2 shows a first example of the shape of the notch 11EC, and FIG. 3 shows a second example of the shape of the notch 11EC. In addition, in FIGS. 2 and 3, as in FIG. 1, the
如圖2所示,缺口11EC的第1例中,缺口11EC係藉由彎曲部EC1、和從彎曲部EC1延伸於長度方向DL之一對直線部EC2所形成。一對直線部EC2係在寬度方向DW隔著間隔排列。一對直線部EC2係在彎曲部EC1的各端部各連接一條。彎曲部EC1係具有在從包含該彎曲部EC1的缺口11EC朝向另一缺口11EC的方向上呈凹狀之圓弧狀。As shown in FIG. 2, in the first example of the notch 11EC, the notch 11EC is formed by a curved portion EC1 and a pair of straight portions EC2 extending from the curved portion EC1 in the longitudinal direction DL. The pair of straight portions EC2 are arranged at intervals in the width direction DW. A pair of straight portions EC2 are connected to each end of the bent portion EC1. The curved portion EC1 has an arc shape that is concave in the direction from the notch 11EC including the curved portion EC1 to the other notch 11EC.
帶狀部11的第1邊緣11E1係包含有缺口11EC。在本例中,在長度方向DL,於各長邊11EL中,從自遮罩部群的各端部分離的部位到長邊11EL的端部為止的部分,係包含於第2邊緣11E2。又,在各短邊11ES中,缺口11EC除外的部分係包含於第2邊緣11E2。半蝕刻線14具有沿著第2邊緣11E2的形狀。The first edge 11E1 of the
亦即,在本例中,第2邊緣11E2係含有由短邊11ES和長邊11EL所形成的角部ECN。半蝕刻線14係包含具有沿著角部ECN之L字狀的部分。半蝕刻線14係在與各角部ECN對應的位置各設有一條。That is, in this example, the second edge 11E2 includes the corner ECN formed by the short side 11ES and the long side 11EL. The half-etched
如圖3所示,缺口11EC的第2例係具有大致拋物線狀。缺口11EC的第2例係由一對曲線部EC3形成。一對曲線部EC3係具有通過缺口11EC的底部,且相對於延伸在長度方向DL的直線彼此對稱之形狀。各曲線部EC3係沿著對長度方向DL交叉之方向延伸。在缺口11EC的第2例中,缺口11EC的全體為彎曲部。As shown in FIG. 3, the second example of the notch 11EC has a substantially parabolic shape. The second example of the notch 11EC is formed by a pair of curved portions EC3. The pair of curved portions EC3 has a bottom that passes through the notch 11EC, and has a shape symmetrical to each other with respect to a straight line extending in the longitudinal direction DL. Each curved portion EC3 extends in a direction intersecting the longitudinal direction DL. In the second example of the notch 11EC, the entire notch 11EC is a curved portion.
帶狀部11的第1邊緣11E1係含有缺口11EC。在本例中,與第1例同樣,在長度方向DL,於各長邊11EL中,從自遮罩部群的各端部分離的部位到長邊11EL的端部的部分,係包含於第2邊緣11E2。半蝕刻線14係具有沿著第2邊緣11E2的形狀。又,缺口11EC係藉由切斷線13自框狀部12分離。The first edge 11E1 of the
亦即,在本例中,第2邊緣11E2係含有由短邊11ES和長邊11EL所形成的角部ECN。半蝕刻線14係含有沿著角部ECN之具有L字狀的部分。半蝕刻線14係在與各角部ECN對應的位置各設有一條。That is, in this example, the second edge 11E2 includes the corner ECN formed by the short side 11ES and the long side 11EL. The half-etched
藉由帶狀部11從框狀部12被切斷而由帶狀部11所形成的蒸鍍遮罩,在使用蒸鍍遮罩時,係被安裝於支持蒸鍍遮罩的框架(frame)。此時,為了抑制在蒸鍍遮罩產生皺摺,一邊將在蒸鍍遮罩的邊緣之各短邊,朝向自另一短邊分離的方向拉引,一邊將蒸鍍遮罩安裝於框架。在帶狀部11的邊緣11E中的短邊11ES所具有的缺口11EC存在有半蝕刻線14的切斷痕之情況,因切斷痕產生的皺摺容易產生於蒸鍍遮罩。關於這點,根據上述之蒸鍍遮罩中間體10,由於半蝕刻線14的切斷痕未存在於缺口11EC,所以在使用蒸鍍遮罩時,可抑制在蒸鍍遮罩產生皺摺。The vapor deposition mask formed by the
又,由於被帶狀部11的邊緣11E所包含的角部ECN係藉半蝕刻線14連接於框狀部12,所以在進行蒸鍍遮罩中間體10的搬送時,可抑制帶狀部11的邊緣11E中的角部ECN比帶狀部11的其他部分更從框狀部12浮起。藉此,可抑制在進行蒸鍍遮罩中間體10的搬送時,角部ECN勾卡在蒸鍍遮罩中間體10的周圍所設置的設備等所具備的零件之情況。其結果,可抑制帶狀部11的變形。In addition, since the corner ECN included in the
圖4顯示沿著圖1中之IV‐IV線的剖面構造,圖5顯示沿著圖1中的V‐V線之剖面構造。亦即,圖4及圖5係顯示與蒸鍍遮罩中間體10所擴展的平面正交且沿著寬度方向DW之蒸鍍遮罩中間體10的剖面構造。此外,圖4係顯示在半蝕刻線14中,半蝕刻加工連續進行時的剖面構造。連續進行了半蝕刻加工的半蝕刻線14係半蝕刻線14的第1例。Fig. 4 shows the cross-sectional structure along the line IV-IV in Fig. 1, and Fig. 5 shows the cross-sectional structure along the line V-V in Fig. 1. That is, FIG. 4 and FIG. 5 show the cross-sectional structure of the vapor deposition mask
如圖4所示,半蝕刻線14係將框狀部12的一部分與帶狀部11中之周邊部11b的一部分相互連接。框狀部12及帶狀部11具有第1板厚T1。另一方面,半蝕刻線14具有第2板厚T2,第2板厚T2比第1板厚T1薄。第1板厚T1為例如10μm以上30μm以下。第2板厚T2為例如3μm以上20μm以下。As shown in FIG. 4, the half-etched
半蝕刻線14中,從與蒸鍍遮罩中間體10擴展的平面對向的方向觀看,與半蝕刻線14延伸的方向正交之方向係半蝕刻線14的寬度方向。半蝕刻線14的寬度W為例如40μm以上120μm以下。半蝕刻線14的剖面係具有矩形。在半蝕刻線14延伸的方向上,具有矩形的剖面係相連。In the half-etched
半蝕刻線14亦可具有沿著半蝕刻線14延伸的方向排列之一個以上的貫通部。貫通部係在蒸鍍遮罩中間體10的厚度方向上貫通蒸鍍遮罩中間體10。於此情況,按半蝕刻線14具有貫通部的程度,半蝕刻線14變得容易沿著半蝕刻線14延伸的方向被切斷。The half-etched
具有複數個貫通部的半蝕刻線14係半蝕刻線14的第2例。圖5係顯示半蝕刻線14具有複數個貫通部時之剖面構造。The half-etched
如圖5所示,半蝕刻線14具有位於半蝕刻線14內之複數個貫通部14H。沿著半蝕刻線14延伸之方向,複數個貫通部14H係隔著間隔排列。複數個貫通部14H亦可等間隔地排列,貫通部14H間的間隔亦可含有複數種長度。As shown in FIG. 5, the half-etched
此外,從與蒸鍍遮罩中間體10擴展的平面對向之方向觀看,貫通部14H的邊緣亦可為圓狀。於此情況,貫通部14H的直徑亦可為例如20μm以上60μm以下。又,在複數個貫通部14H等間隔地排列之情況,貫通部14H間的間隔亦可為例如200μm以上500μm以下。In addition, the edge of the
圖6及圖7係顯示與蒸鍍遮罩中間體10擴展的平面正交之平面,且沿順著長度方向DL延伸的平面之遮罩部11a的剖面構造。圖6係顯示遮罩部11a的第1例之剖面構造。另一方面,圖7係顯示遮罩部11a的第2例之剖面構造。6 and 7 show the cross-sectional structure of the
如圖6所示,蒸鍍遮罩中間體10具備有︰表面10F、以及與表面10F相反側的面、亦即背面10R。表面10F係在蒸鍍遮罩安裝於蒸鍍裝置的狀態下,與蒸鍍裝置的蒸鍍源對向。背面10R係在蒸鍍遮罩安裝於蒸鍍裝置的狀態下,與玻璃基板等的蒸鍍對象對向。遮罩部11a係具有貫通蒸鍍遮罩中間體10之複數個遮罩孔11H。遮罩孔11H的壁面係相對於蒸鍍遮罩中間體10的厚度方向,於剖面觀看下具有傾斜。遮罩孔11H的壁面之形狀,於剖面觀看下為朝向遮罩孔11H的外側突出之半圓弧狀。換言之,於剖面觀看下,遮罩孔11H係具有從表面10F朝背面10R凸出之半圓弧狀。此外,遮罩孔11H的壁面形狀,於剖面觀看下,亦可為具有複數個彎曲點之複雜的曲線狀。As shown in FIG. 6, the vapor deposition mask
遮罩部11a的厚度亦可為例如10μm以下。若為這樣薄的遮罩部11a,可使遮罩孔11H所具有之壁面的面積本身變小,又,因蒸鍍遮罩中間體10的厚度是薄的,所以蒸鍍物質於遮罩孔11H內飛濺的距離是短的。藉此,可減小附著於遮罩孔11H的壁面之蒸鍍物質的量。此外,於蒸鍍遮罩中間體10中,遮罩部11a以外的部分的厚度為例如25μm以下。於蒸鍍遮罩中間體10中,遮罩部11a以外的部分的厚度,係與加工前的金屬片,亦即帶狀部11、框狀部12、切斷線13及半蝕刻線14被形成前之金屬片的厚度相等。The thickness of the
表面10F係含有屬於遮罩孔11H的開口之第1開口H1。背面10R係含有屬於遮罩孔11H的開口之第2開口H2。在與表面10F對向的平面視圖中,第1開口H1係大於第2開口H2。各遮罩孔11H係供從蒸鍍源昇華的蒸鍍物質通過之通路。從蒸鍍源昇華的蒸鍍物質,係從第1開口H1朝第2開口H2前進。在遮罩孔11H中,由於第1開口H1大於第2開口H2,所以可使從第1開口H1進入遮罩孔11H之蒸鍍物質的量增加。此外,在沿著表面10F的剖面中之遮罩孔11H的面積,從第2開口H2朝向第1開口H1,亦可從第2開口H2至第1開口H1單調地增大,亦可在從第2開口H2至第1開口H1的中途具有大致一定的部位。The
如圖7所示,遮罩孔11H係由具有第1開口H1的大孔11LH、和具有第2開口H2的小孔11SH所形成。在與表面10F對向的平面視圖中,第1開口H1係大於第2開口H2。大孔11LH的剖面積係從第1開口H1朝向背面10R單調地減少。小孔11SH的剖面積係從第2開口H2朝向表面10F單調地減少。於剖面觀看下,遮罩孔11H的壁面係具有大孔11LH連接於小孔11SH的部位,亦即在蒸鍍遮罩中間體10的厚度方向之中間,具有朝向遮罩孔11H的內側突出之形狀。在遮罩孔11H的壁面突出的部位與背面10R之間的距離係為階高(step height)SH。As shown in FIG. 7, the
此外,在遮罩部11a的第1例中,階高SH為零。從確保到達第2開口H2之蒸鍍物質的量之觀點,階高SH較佳為零。在帶狀部11具備遮罩部11a的第1例之情況,加工前的金屬片之厚度係薄到將金屬片藉由從單面進行濕式蝕刻而形成遮罩孔11H之程度。加工前的金屬片之厚度,係如上述為例如25μm以下。此外,在帶狀部11具備遮罩部11a的第2例之情況下,遮罩部11a的厚度為例如25μm以下。又,於此情況,加工前的金屬片的厚度為例如50μm以下。In addition, in the first example of the
[蒸鍍遮罩的構成]
參照圖8至圖10,說明蒸鍍遮罩的構成。
如圖8所示,遮罩裝置20具備有框架21和複數個蒸鍍遮罩31。在圖8所示的例子中,遮罩裝置20具備有兩個蒸鍍遮罩31,惟遮罩裝置20亦可具備一個蒸鍍遮罩31,亦可具備三個以上的蒸鍍遮罩31。框架21具有可支持複數個蒸鍍遮罩31之矩形框狀。框架21係安裝於用於進行蒸鍍之蒸鍍裝置。框架(frame)21係在涵蓋各蒸鍍遮罩31所在範圍的大致全體,具有貫通框架21之框架孔21H。[The composition of the vapor deposition mask]
8 to 10, the structure of the vapor deposition mask will be described.
As shown in FIG. 8, the
各蒸鍍遮罩31具備有︰遮罩部31a、周邊部31b、及邊緣31E。於遮罩部31a形成有複數個遮罩孔31H。周邊部31b係包圍著遮罩部31a。邊緣31E具有矩形。本實施形態中,蒸鍍遮罩31具備有三個遮罩部31a。三個遮罩部31a係在蒸鍍遮罩31的長度方向隔著間隔排列。蒸鍍遮罩31可具備兩個以下的遮罩部31a,亦可具備四個以上的遮罩部31a。在蒸鍍遮罩31中,遮罩部31a係與帶狀部11所具有的遮罩部11a對應,周邊部31b係與帶狀部11所具有的周邊部11b對應,邊緣31E係與帶狀部11所具有的邊緣11E對應。遮罩部31a所具備的遮罩孔31H,係與遮罩部11a所具備的遮罩孔11H對應。Each
蒸鍍遮罩31的邊緣31E係由第1邊緣31E1和第2邊緣31E2所構成。第1邊緣31E1係含有相對於遮罩部31a之位在蒸鍍遮罩31的寬度方向的部分。蒸鍍遮罩31進一步具備存在於第2邊緣31E2的切斷痕。邊緣31E的第1邊緣31E1係與帶狀部11的邊緣11E所具有的第1邊緣11E1對應,邊緣31E的第2邊緣31E2係與帶狀部11的邊緣11E所具有的第2邊緣11E2對應。The
各蒸鍍遮罩31係具有沿著一個方向延伸之帶狀。在各蒸鍍遮罩31中的周邊部31b中,在蒸鍍遮罩31延伸的方向包夾複數個遮罩部31a的一對部分係分別固定於框架21。蒸鍍遮罩31係藉接著或熔接等固定於框架21。Each
圖9及圖10係將圖8所示的區域A放大顯示。於區域A,包含蒸鍍遮罩31所具備之切斷痕的一部分。此外,圖9係顯示蒸鍍遮罩中間體10具有半蝕刻線14的第1例之情況下的切斷痕。另一方面,圖10係顯示蒸鍍遮罩中間體10具有半蝕刻線14的第2例之情況下的切斷痕。9 and 10 are enlarged and displayed area A shown in FIG. 8. In the area A, a part of the cut trace provided in the
如圖9所示,在蒸鍍遮罩31所具備的邊緣31E的第2邊緣31E2存在有切斷痕E21。切斷痕E21係與上述之半蝕刻線14對應。切斷痕E21係為半蝕刻線14的一部分朝向蒸鍍遮罩31的表面彎曲之彎曲部。彎曲部係為在從框狀部12切斷帶狀部11時,藉由半蝕刻線14朝向帶狀部11的表面捲起而形成。As shown in FIG. 9, a cutting mark E21 is present on the second edge 31E2 of the
如圖10所示,在蒸鍍遮罩中間體10具有半蝕刻線14的第2例之情況也是,在蒸鍍遮罩31所具備之邊緣31E的第2邊緣31E2存在有切斷痕E22。切斷痕E22係藉由具有複數個圓弧狀的凹處E22a、和複數個彎曲部E22b而形成。在各切斷痕E22中,凹處E22a和彎曲部E22b交替地排列。彎曲部E22b係半蝕刻線14中之貫通部14H以外的部分朝向蒸鍍遮罩31的表面彎曲之部位。彎曲部E22b係為在從框狀部12切斷帶狀部11時,藉由半蝕刻線14的一部分朝向帶狀部11的表面捲起而形成。切斷痕E22所包含的凹處E22a係與半蝕刻線14具有的貫通部14H對應。相對於此,切斷痕E22所包含的彎曲部E22b係與半蝕刻線14中之貫通部14H以外的部位對應。As shown in FIG. 10, in the second example in which the vapor deposition mask
此外,如上述之切斷痕E21、E22所示,在切斷痕E21、E22具有彎曲部的情況,彎曲部係以在蒸鍍遮罩31中朝向含有第1開口H1的表面彎曲較佳。藉此,即便切斷痕E21、E22具有彎曲部,也可抑制蒸鍍遮罩31依彎曲部之程度而從框架21浮起的情況。In addition, as shown in the above-mentioned cut marks E21 and E22, when the cut marks E21 and E22 have curved portions, it is preferable that the curved portions bend in the
[蒸鍍遮罩的製造方法]
參照圖11,說明蒸鍍遮罩的製造方法。
蒸鍍遮罩31的製造方法係包含︰在金屬片形成帶狀部11和框狀部12;以及從框狀部12切斷帶狀部11,從帶狀部11形成蒸鍍遮罩31。以下,參照圖11,更詳細地說明蒸鍍遮罩31的製造方法。此外,以下,係以帶狀部11具備遮罩部11a的第1例的情況下之蒸鍍遮罩31的製造方法作為蒸鍍遮罩31的製造方法的一例來說明。[Manufacturing method of vapor deposition mask]
Referring to Fig. 11, a method of manufacturing the vapor deposition mask will be described.
The method of manufacturing the
如圖11所示,在蒸鍍遮罩31的製造方法中,首先,準備金屬片(步驟S11)。在準備金屬片的工序中,亦可使用電解來準備金屬片,亦可使用軋延及研磨等來準備金屬片。此外,在準備金屬片的工序中所準備的金屬片具有︰具有帶狀的金屬片被捲取而成的卷狀。其次,在金屬片所具有的對象面之一,形成阻劑層(步驟S12)。然後,對阻劑層進行曝光及顯影(步驟S13)。藉此,在金屬片的對象面形成阻劑遮罩。As shown in FIG. 11, in the manufacturing method of the
其次,藉由使用阻劑遮罩之對象面的濕式蝕刻,於金屬片形成複數個遮罩孔11H(步驟S14)。此時,在形成複數個遮罩孔11H之同時,也形成帶狀部11、框狀部12、切斷線13、及半蝕刻線14。在蒸鍍遮罩中間體10,複數個帶狀部11係以隔著間隔排列之方式形成。Next, a plurality of
其次,藉由將阻劑遮罩從對象面去除,而形成上述的遮罩部11a(步驟S15)。其次,將卷狀的蒸鍍遮罩中間體10沿著寬度方向DW切斷。藉此,得到具有複數個帶狀部11之中間體薄片(步驟S16)。且,藉由切斷半蝕刻線14,從框狀部12切斷帶狀部11,可得到蒸鍍遮罩31(步驟S17)。Next, by removing the resist mask from the target surface, the above-mentioned
此外,在帶狀部11具備遮罩部11a的第2例之情況下,於背面10R實施上述之步驟S12至步驟S15為止的工序,藉此,形成小孔11SH。其次,將用以保護小孔11SH的保護層填充於小孔11SH。接著,於表面10F實施上述之步驟S12至步驟S15為止的工序,藉此,形成大孔11LH。藉此,可得到遮罩部11a的第2例。此外,使用於形成小孔11SH的阻劑遮罩、和用於保護小孔11SH的保護層,亦可與使用於形成大孔11LH的阻劑遮罩同時被去除。In addition, in the case of the second example in which the belt-shaped
此外,在帶狀部11具備遮罩部11a的第2例,且具備半蝕刻線14的第1例之情況下,半蝕刻線14亦可於背面10R實施步驟S12至步驟S15為止的工序時形成。或者,半蝕刻線14亦可於表面10F實施步驟S12至步驟S15為止的工序時形成。In addition, in the case of the second example in which the
又,在帶狀部11具備遮罩部11a的第2例,且具備半蝕刻線14的第2例之情況下,半蝕刻線14所具備的貫通部14H,係藉由於背面10R實施步驟S12至步驟S15為止的工序且於表面10F實施步驟S12至步驟S15為止的工序而形成。另一方面,半蝕刻線14中之貫通部14H以外的部分,亦可於背面10R實施步驟S12至步驟S15為止的工序時形成,亦可於表面10F實施步驟S12至步驟S15為止的工序時形成。In addition, in the case of the second example in which the
如以上說明,根據蒸鍍遮罩中間體、蒸鍍遮罩、及蒸鍍遮罩的製造方法的一實施形態,可得到以下記載的效果。
(1)由於可將框狀部12對帶狀部11的連接部分以更小的力切斷,所以在進行蒸鍍遮罩31的製造時,可容易將帶狀部11從框狀部12切離。另一方面,在進行蒸鍍遮罩中間體10的搬送時,帶狀部11與框狀部12的連接,係藉由將帶狀部11的邊緣11E中之第2邊緣11E2從框狀部12區分的半蝕刻線14所確保。As described above, according to one embodiment of the vapor deposition mask intermediate body, the vapor deposition mask, and the method of manufacturing the vapor deposition mask, the effects described below can be obtained.
(1) Since the connecting portion of the frame-shaped
(2)在半蝕刻線14具有貫通部14H之情況,半蝕刻線14容易沿著半蝕刻線14延伸的方向被切斷。(2) When the half-etched
(3)半蝕刻線14的切斷痕E21、E22未存在於缺口11EC,藉此可抑制在使用蒸鍍遮罩31時於蒸鍍遮罩31產生皺摺的情況。(3) The cut marks E21 and E22 of the half-etched
(4)可抑制帶狀部11的邊緣11E中的角部ECN比帶狀部11的其他部分還要從框狀部12浮起。藉此,可抑制在進行蒸鍍遮罩中間體10的搬送時,角部ECN勾卡在設於蒸鍍遮罩中間體10周圍的設備等所具備之零件的情況。其結果,可抑制帶狀部11的變形。(4) It is possible to prevent the corner ECN in the
此外,上述實施形態係可以如下方式變更來實施。
[線狀脆弱部]
・參照圖12至圖16,框狀部12亦可具備以下說明之線狀脆弱部。In addition, the above-mentioned embodiment can be modified and implemented as follows.
[Linear fragile part]
・Referring to Figs. 12 to 16, the frame-shaped
如圖12所示,框狀部12可具備︰沿著從切斷線13朝向框狀部12的外側邊緣12D的方向延伸之線狀脆弱部12A。在圖12所示的例中,線狀脆弱部12A係沿著與長度方向DL交叉之方向延伸。又,線狀脆弱部12A的一端部位於切斷線13,線狀脆弱部12A的另一端部位於框狀部12的內部。As shown in FIG. 12, the frame-shaped
蒸鍍遮罩中間體10具備有複數個線狀脆弱部12A。在蒸鍍遮罩中間體10的搬送方向上,複數個線狀脆弱部12A係包含有︰位於比遮罩部11a靠上游之上游側脆弱部12AU;以及位於比遮罩部11a靠下游之下游側脆弱部12AD。此外,比遮罩部11a靠上游意指︰在蒸鍍遮罩中間體10的搬送方向比遮罩部11a靠前方。又,比遮罩部11a靠下游意指︰在蒸鍍遮罩中間體10的搬送方向比遮罩部11a靠後方。The vapor deposition mask
在上游側脆弱部12AU中,上游側脆弱部12AU的一端部係與在切斷線13中之位在比遮罩部群靠上游處的部分相連接。另一方面,在下游側脆弱部12AD中,下游側脆弱部12AD的一端部係與切斷線13中之位在比遮罩部群靠下游處的部分相連接。In the upstream fragile portion 12AU, one end of the upstream fragile portion 12AU is connected to a portion located upstream of the mask portion group in the
蒸鍍遮罩中間體10係在寬度方向DW的兩個帶狀部11之間,具有兩個上游側脆弱部12AU和兩個下游側脆弱部12AD。兩個上游側脆弱部12AU係在寬度方向DW排列,且從框狀部12朝向沿著切斷線13中彼此不同的帶狀部11的部分延伸。兩個下游側脆弱部12AD係在寬度方向DW排列,且從框狀部12朝向沿著切斷線13中相互不同的帶狀部11之部分延伸。The vapor deposition mask
又,蒸鍍遮罩中間體10具有︰在寬度方向DW夾著兩個帶狀部11之一對上游側脆弱部12AU;以及在寬度方向DW夾著兩個帶狀部11之一對下游側脆弱部12AD。此外,蒸鍍遮罩中間體10只要具備此等線狀脆弱部12A中的至少一個即可。In addition, the vapor deposition mask
線狀脆弱部12A的機械強度,係比框狀部12中之線狀脆弱部12A以外的部分的機械強度還低。因此,框狀部12係容易沿著線狀脆弱部12A被切斷。而且,由於線狀脆弱部12A中的一端部係位於切斷線13,所以從框狀部12卸下帶狀部11時可將框狀部12所形成的環切斷。藉此,變得容易進行半蝕刻線14的切斷。The mechanical strength of the linear
在由帶狀部11形成蒸鍍遮罩之際,首先,於長度方向DL的既定位置,將蒸鍍遮罩中間體10沿著寬度方向DW切斷。藉此,獲得僅具有沿著寬度方向DW排列的兩個帶狀部11之蒸鍍遮罩中間體10。其次,沿著線狀脆弱部12A切斷框狀部12,藉此將圍繞帶狀部11之框狀部12的環切斷。然後,藉由切斷半蝕刻線14,而從框狀部12切斷帶狀部11。藉此,可從帶狀部11形成蒸鍍遮罩。When forming the vapor deposition mask by the band-shaped
圖13係將圖12所示的區域B放大顯示,又,圖14係將圖12所示的區域C放大顯示。此外,區域B係包含兩個上游側脆弱部12AU中的上游端部,又,區域C係包含兩個下游側脆弱部12AD中的下游端部。圖15及圖16係將圖12所示的區域D放大顯示。FIG. 13 is an enlarged display of the area B shown in FIG. 12, and FIG. 14 is an enlarged display of the area C shown in FIG. 12. In addition, the area B includes the upstream end of the two upstream fragile portions 12AU, and the area C includes the downstream end of the two downstream fragile portions 12AD. 15 and 16 are enlarged and displayed area D shown in FIG. 12.
如圖13所示,各上游側脆弱部12AU的上游端部,係連接於貫通框狀部12之上游側貫通部12BU。兩個上游側貫通部12BU係在寬度方向DW隔著既定的間隔排列。在由帶狀部11形成蒸鍍遮罩31時,例如藉由可切斷框狀部12的器具,而將框狀部12中之在寬度方向DW被兩個上游側貫通部12BU夾著的部分切斷,藉此,形成切斷片。其次,藉由朝向與蒸鍍遮罩中間體10擴展的平面交叉之方向拉起切斷片,可使切斷兩個上游側脆弱部12AU的力同時作用於兩個上游側脆弱部12AU。As shown in FIG. 13, the upstream end of each upstream fragile portion 12AU is connected to the upstream penetrating portion 12BU that penetrates the frame-shaped
此外,在寬度方向DW上夾著兩個帶狀部11的一對上游側脆弱部12AU的每一者中也是,上游端部係連接於上游側貫通部12BU。又,形成有與該上游側貫通部12BU成對的其他上游側貫通部12BU。In addition, in each of the pair of upstream fragile portions 12AU sandwiching the two band-shaped
如圖14所示,框狀部12係具備有︰與兩個下游側脆弱部12AD的下游端部相連之被把持片12C;以及包圍被把持片12C之下游側貫通部12BD。藉此,由於可藉由器具把持與下游側脆弱部12AD的下游端部相連之被把持片12C、或藉由人的手指把持,所以可容易使切斷下游側脆弱部12AD的力作用於下游側脆弱部12AD。藉由將被把持片12C朝向與蒸鍍遮罩中間體10擴展的平面交叉之方向拉起,可使切斷兩個下游側脆弱部12AD的力同時作用於兩個下游側脆弱部12AD。As shown in FIG. 14, the frame-shaped
此外,在寬度方向DW夾著兩個帶狀部11的一對下游側脆弱部12AD的每一者也是,下游端部連接於被把持片12C,且被把持片12C係被下游側貫通部12BD所包圍。於被把持片12C,連接有一個下游側脆弱部12AD的下游端部。In addition, each of the pair of downstream fragile portions 12AD sandwiching the two band-shaped
又,如圖15所示,從與蒸鍍遮罩中間體10的表面10F對向的方向觀看,切斷線13亦可具備有突出部13A,該突出部13A係朝向自帶狀部11離開的方向突出,該帶狀部11係藉該切斷線13自框狀部12分離。在從與蒸鍍遮罩中間體10的表面10F對向的方向觀看下,突出部13A係具有矩形。突出部13A係在長度方向DL上位於較切斷線13與半蝕刻線14的邊界靠上游側。下游側脆弱部12AD的上游端部係連接於切斷線13中的突出部13A。此外,下游側脆弱部12AD的上游端部,在突出部13A中也是,可與位於最下游側的邊中之由一端朝另一端的中途連接。此外,下游側脆弱部12AD的上游端部,在突出部13A中,也可連接於位在最下游側的邊中之和帶狀部11相距的距離最大的端部。In addition, as shown in FIG. 15, when viewed from a direction facing the
藉由切斷線13具有突出部13A,且下游側脆弱部12AD連接於突出部13A,在沿著下游側脆弱部12AD切斷框狀部12時,可抑制用於切斷框狀部12的外力作用於帶狀部11。藉此,可抑制外力作用於帶狀部11所具有的遮罩部11a。又,藉由上游端部是存在於突出部13A中存在於最下游側的邊中之一端與另一端以外的部分,而使下游側脆弱部12AD變得容易被切斷。Since the cutting
此外,切斷線13並不限於在各下游側脆弱部12AD所連接之處可具有突出部13A,在各上游側脆弱部12AU所連接的地方亦可具有突出部13A,藉此,可獲得基於上述突出部13A所產生的效果之功效。In addition, the
又,如圖16所示,從與蒸鍍遮罩中間體10的表面10F對向的方向觀看,突出部13A亦可從切斷線13與半蝕刻線14的邊界朝向自帶狀部11離開的方向突出,該帶狀部11係藉該切斷線13自框狀部12分離。即便在此情況,下游側脆弱部12AD的上游端部,在突出部13A中也是可與位於最下游側的邊中之由一端朝另一端地中途連接。此外,下游側脆弱部12AD的上游端部,在突出部13A中,也可連接於存在於最下游側的邊中之和帶狀部11相距的距離最大的端部。因此,根據突出部13A,可得到基於參照圖15之如前說明的突出部13A之效果。In addition, as shown in FIG. 16, when viewed from a direction facing the
此外,切斷線13並不限於在各下游側脆弱部12AD所連接之處可具有突出部突出部13A,在各上游側脆弱部12AU所連接之處也可具有突出部13A,藉此,可得到基於參照圖15之如前說明的突出部13A所產生的效果之功效。In addition, the
在圖13至圖16所示的例子中,線狀脆弱部12A係具有隔著間隔排列的複數個貫通部12A1。貫通部12A1係在蒸鍍遮罩中間體10的厚度方向上貫通蒸鍍遮罩中間體10。取而代之,線狀脆弱部12A亦可藉由一個具有線狀的半蝕刻部所形成,亦可具有在線狀脆弱部12A延伸的方向隔著間隔排列的複數個半蝕刻部。或者,在線狀脆弱部12A中,線狀半蝕刻部亦可具有在半蝕刻部所延伸的方向上隔著間隔排列的複數個貫通部。In the example shown in FIGS. 13 to 16, the linear
又,供連接上游側脆弱部12AU的上游端部之上游側貫通部12BU,亦可變更成連接下游側脆弱部12AD的被把持片12C、及包圍被把持片12C的下游側貫通部12BD。或者,供連接下游側脆弱部12AD的下游端部之被把持片12C、及包圍被把持片12C的下游側貫通部12BD,亦可變更成連接上游側脆弱部12AU的上游端部之上游側貫通部12BU。In addition, the upstream through portion 12BU that connects the upstream end of the upstream fragile portion 12AU may be changed to the grasped
根據具備線狀脆弱部12A的蒸鍍遮罩中間體10,可得到以下記載的效果。
(5)由於線狀脆弱部12A中的一端部連接於切斷線13,所以在從框狀部12卸下帶狀部11時可將框狀部12形成的環切斷,藉此,變得容易進行半蝕刻線14的切斷。According to the vapor deposition mask
[切斷線]
・如圖17所示,從與蒸鍍遮罩中間體10的表面10F對向之方向觀看,突出部13A的外形亦可具有梯形。下游側脆弱部12AD的上游端部,在突出部13A中,係在位於最下游側的邊中連接於和帶狀部11相隔的距離最大之端部。[Cut the line]
・As shown in FIG. 17, when viewed from the direction facing the
[半蝕刻線]
・半蝕刻線14亦可不含有沿著帶狀部11的邊緣11E所具有的角部ECN之具有L字狀的部分。半蝕刻線14亦可例如具有沿寬度方向DW延伸的直線狀,亦可具有沿長度方向DL延伸之直線狀。又,半蝕刻線14亦可具備具有沿寬度方向DW延伸之直線狀的部分、和具有沿長度方向DL延伸之直線狀的部分兩者。即便在此情況,藉由帶狀部11的邊緣11E中第2邊緣11E2透過半蝕刻線14從框狀部12區分,也可得到基於上述(1)的效果。[Half-etched line]
・The half-etched
・半蝕刻線14亦可存在於帶狀部11的邊緣11E之缺口11EC與框狀部12之間。亦即,在帶狀部11的邊緣11E中,缺口11EC亦可包含於第2邊緣11E2。即便在此情況,藉由帶狀部11的邊緣11E中的第2邊緣11E2透過半蝕刻線14從框狀部12區分,可得到基於上述(1)的效果。・The half-etched
・在半蝕刻線14中,具有第2板厚的複數個半蝕刻部亦可沿著半蝕刻線14延伸之方向隔著間隔排列。於此情況,在彼此相鄰的兩個半蝕刻部之間存在有具有第1板厚的非蝕刻部。・In the half-etched
[帶狀部]
・如圖18所示,在蒸鍍遮罩中間體10中,被帶狀部11所具備的缺口11EC包圍的區域亦可為貫通部13H。於此情況,框狀部12的邊緣11E中的第1邊緣11E1,係藉由切斷線13和貫通部13H而從框狀部12分離。本變更例中,切斷線13和貫通部13H係從第1邊緣11E1和框狀部12分離的分離部。[Ribbon]
・As shown in FIG. 18, in the vapor deposition mask
・帶狀部11的邊緣11E中的短邊11ES亦可不具有缺口11EC。於此情況,半蝕刻線14可存在於短邊11ES與框狀部12之間的任意部位。又,即便在此情況,藉由帶狀部11的邊緣11E中的第2邊緣11E2透過半蝕刻線14從框狀部12區分,可得到基於上述(1)的效果。・The short side 11ES in the
[蒸鍍遮罩中間體] ・蒸鍍遮罩中間體亦可由具備金屬片和積層於金屬片的樹脂層之遮罩基材所形成。於此情況,由蒸鍍遮罩中間體形成的蒸鍍遮罩亦由金屬片和樹脂層所形成。或者,蒸鍍遮罩中間體亦可由具備兩片金屬片和在蒸鍍遮罩中間體的厚度方向被兩片金屬片所夾持的樹脂層之遮罩基材所形成。於此情況,由蒸鍍遮罩中間體形成的蒸鍍遮罩,亦由兩片金屬片及被兩片金屬片所挾持的樹脂層所形成。在此等中的任一情況也是,形成樹脂層的合成樹脂,亦可為例如聚醯亞胺樹脂。此外,藉由對樹脂層照射雷射光線,可形成此等蒸鍍遮罩中間體所具備的貫通部、和半蝕刻部。[Intermediate of Evaporation Mask] ・The vapor deposition mask intermediate body can also be formed of a mask substrate with a metal sheet and a resin layer laminated on the metal sheet. In this case, the vapor deposition mask formed of the vapor deposition mask intermediate is also formed of a metal sheet and a resin layer. Alternatively, the vapor deposition mask intermediate body may be formed of a mask base material including two metal sheets and a resin layer sandwiched by the two metal sheets in the thickness direction of the vapor deposition mask intermediate body. In this case, the vapor deposition mask formed by the vapor deposition mask intermediate is also formed by two metal sheets and a resin layer sandwiched by the two metal sheets. In any of these cases, the synthetic resin forming the resin layer may be, for example, polyimide resin. In addition, by irradiating the resin layer with laser light, the through part and the half-etched part of the intermediate vapor deposition mask can be formed.
以下附記由上述實施形態及變更例所導出的技術思想。 [附記1] 一種蒸鍍遮罩中間體,具備︰ 帶狀部;及 包圍前述帶狀部的框狀部; 前述帶狀部具備︰ 形成有複數個遮罩孔的遮罩部;及 包圍前述遮罩部的周邊部, 前述周邊部及前述框狀部具有第1板厚, 前述第1板厚為10μm以上30μm以下, 前述帶狀部的邊緣包含第1邊緣和第2邊緣, 前述第1邊緣係含有在前述帶狀部的寬度方向與前述遮罩部對向的部分, 前述第1邊緣和前述框狀部係藉分離部分離, 前述第2邊緣和前述框狀部係藉由具有第2板厚的複數個半蝕刻要素隔著間隔排列的線狀半蝕刻部區分,在前述線狀半蝕刻部中,在彼此相鄰的兩個前述半蝕刻要素間存在有具有前述第1板厚的非蝕刻部。The technical ideas derived from the above-mentioned embodiments and modified examples are appended below. [Supplement 1] A kind of vapor deposition mask intermediate, with: Band; and A frame-shaped portion surrounding the aforementioned band-shaped portion; The aforementioned band has: Forming a mask portion with a plurality of mask holes; and Surrounding the periphery of the aforementioned mask, The peripheral portion and the frame-shaped portion have a first plate thickness, The aforementioned first plate thickness is 10 μm or more and 30 μm or less, The edges of the aforementioned band-shaped portion include a first edge and a second edge, The first edge includes a portion facing the mask portion in the width direction of the band-shaped portion, The first edge and the frame-shaped part are separated by a separating part, The second edge and the frame-shaped portion are distinguished by linear half-etched portions arranged at intervals with a plurality of half-etched elements having a second thickness. In the linear half-etched portion, two adjacent to each other There is a non-etched part having the first plate thickness between the half-etched elements.
根據上述附記,由於藉由線狀半蝕刻部彼此連接之周邊部及框狀部的第1板厚為10μm以上30μm以下,所以藉由在線狀半蝕刻部中隔著間隔排列的複數個半蝕刻要素,可充分地提升帶狀部的切斷性。又,由於周邊部和框狀部係藉由半蝕刻部和非蝕刻部連接,所以即便周邊部和框狀部非常地薄,也可在進行蒸鍍遮罩中間體的搬送時,確保周邊部與框狀部的連接。According to the above note, since the first plate thickness of the peripheral portion and the frame-shaped portion connected to each other by the linear half-etched portion is 10 μm or more and 30 μm or less, the linear half-etched portion is arranged with a plurality of half-etched at intervals. Element, can fully improve the cutting performance of the belt-shaped part. In addition, since the peripheral part and the frame-shaped part are connected by the half-etched part and the non-etched part, even if the peripheral part and the frame-shaped part are very thin, it is possible to secure the peripheral part when transporting the vapor deposition mask intermediate body. The connection with the frame.
10:蒸鍍遮罩中間體 11:帶狀部 12:框狀部 13:切斷線 14:半蝕刻線 20:遮罩裝置 21:框架 31:蒸鍍遮罩10: Evaporation mask intermediate 11: Ribbon 12: Frame 13: Cut the line 14: Half etching line 20: Masking device 21: Frame 31: Evaporation mask
圖1係顯示一實施形態中的蒸鍍遮罩中間體的構造之平面圖。 圖2係顯示圖1所示之蒸鍍遮罩中間體的構造的第1例之部分平面圖。 圖3係顯示圖1所示之蒸鍍遮罩中間體的構造的第2例之部分平面圖。 圖4係顯示沿著圖1的IV‐IV線的構造之剖面圖。 圖5係顯示沿著圖1的V‐V線的構造之剖面圖。 圖6係顯示圖1所示之帶狀部具備的遮罩孔的構造之第1例的剖面圖。 圖7係顯示圖1所示之帶狀部具備的遮罩孔的構造之第2例的剖面圖。 圖8係顯示具備由圖1所示之蒸鍍遮罩中間體形成的蒸鍍遮罩之遮罩裝置的構造之平面圖。 圖9係顯示圖8的區域A中的構造的第1例之平面圖。 圖10係顯示圖8的區域A中的構造的第2例之平面圖。 圖11係用以說明圖8所示之蒸鍍遮罩的製造方法之流程圖。 圖12係顯示蒸鍍遮罩中間體的第1變更例之構造的平面圖。 圖13係將上游側脆弱部之上游端部的構造予以放大顯示之平面圖。 圖14係將下游側脆弱部之下游端部的構造予以放大顯示之平面圖。 圖15係將圖12所示之切斷線的第1例中的一部分予以放大顯示之平面圖。 圖16係將圖12所示之切斷線的第2例中的一部分予以放大顯示之平面圖。 圖17係將圖12所示之切斷線的第3例中的一部分予以放大顯示之平面圖。 圖18係顯示蒸鍍遮罩中間體的第2變更例中的構造之平面圖。Fig. 1 is a plan view showing the structure of a vapor deposition mask intermediate body in an embodiment. Fig. 2 is a partial plan view showing a first example of the structure of the vapor deposition mask intermediate body shown in Fig. 1. Fig. 3 is a partial plan view showing a second example of the structure of the vapor deposition mask intermediate body shown in Fig. 1. Fig. 4 is a cross-sectional view showing the structure along the IV-IV line of Fig. 1. Fig. 5 is a cross-sectional view showing the structure along the line V-V in Fig. 1. Fig. 6 is a cross-sectional view showing a first example of the structure of the mask hole provided in the band-shaped portion shown in Fig. 1. Fig. 7 is a cross-sectional view showing a second example of the structure of the mask hole provided in the belt-shaped portion shown in Fig. 1. FIG. 8 is a plan view showing the structure of a mask device provided with a vapor deposition mask formed from the vapor deposition mask intermediate body shown in FIG. 1. Fig. 9 is a plan view showing the first example of the structure in the area A of Fig. 8. Fig. 10 is a plan view showing a second example of the structure in the area A of Fig. 8. FIG. 11 is a flowchart for explaining the manufacturing method of the vapor deposition mask shown in FIG. 8. Fig. 12 is a plan view showing the structure of the first modified example of the vapor deposition mask intermediate body. Fig. 13 is a plan view showing an enlarged view of the structure of the upstream end of the upstream fragile portion. Fig. 14 is a plan view showing the structure of the downstream end of the downstream fragile portion in an enlarged manner. Fig. 15 is a plan view in which a part of the first example of the cutting line shown in Fig. 12 is enlarged and displayed. Fig. 16 is a plan view showing an enlarged part of the second example of the cutting line shown in Fig. 12. Fig. 17 is an enlarged plan view showing a part of the third example of the cutting line shown in Fig. 12; Fig. 18 is a plan view showing the structure in the second modification of the vapor deposition mask intermediate body.
10:蒸鍍遮罩中間體 10: Evaporation mask intermediate
11:帶狀部 11: Ribbon
11a:遮罩部 11a: Mask
11b:周邊部 11b: Peripheral part
11E:邊緣 11E: Edge
11E1:第1邊緣 11E1: 1st edge
11E2:第2邊緣 11E2: 2nd edge
11EL:長邊 11EL: Long side
11H:遮罩孔 11H: Mask hole
11ES:短邊 11ES: Short side
11EC:缺口 11EC: gap
12:框狀部 12: Frame
13:切斷線 13: Cut the line
14:半蝕刻線 14: Half etching line
DL:長度方向 DL: length direction
DW:寬度方向 DW: width direction
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JP4540305B2 (en) * | 2003-06-11 | 2010-09-08 | 大日本印刷株式会社 | Metal mask and its mounting method |
KR20120111912A (en) * | 2009-06-23 | 2012-10-11 | 후지 덴키 가부시키가이샤 | Flat panel display, manufacturing intermediate therefor, and method of manufacturing same |
KR102072679B1 (en) * | 2013-02-27 | 2020-02-04 | 삼성디스플레이 주식회사 | Method of manufacturing mask assembly for thin film deposition |
JP5455099B1 (en) | 2013-09-13 | 2014-03-26 | 大日本印刷株式会社 | Metal plate, metal plate manufacturing method, and mask manufacturing method using metal plate |
JP6670469B2 (en) | 2016-03-16 | 2020-03-25 | 大日本印刷株式会社 | Deposition mask and deposition mask intermediate |
KR102568780B1 (en) * | 2016-05-26 | 2023-08-22 | 삼성디스플레이 주식회사 | Mask frame assembly for thin film deposition |
CN106148892B (en) * | 2016-07-25 | 2019-04-02 | 京东方科技集团股份有限公司 | Throw the net method and mask plate, substrate, the display device of one seed mask plate |
KR20220104846A (en) * | 2016-10-07 | 2022-07-26 | 다이니폰 인사츠 가부시키가이샤 | Vapor deposition mask manufacturing method, vapor deposition mask-allocated intermediate product, and vapor deposition mask |
JP6428903B2 (en) | 2017-01-17 | 2018-11-28 | 大日本印刷株式会社 | Vapor deposition mask and vapor deposition mask manufacturing method |
CN108796433B (en) * | 2017-04-27 | 2024-01-30 | 京东方科技集团股份有限公司 | Mask sheet, mask sheet and method of assembling the same |
CN107085350B (en) * | 2017-05-11 | 2021-01-26 | 京东方科技集团股份有限公司 | Mask plate or display mother plate and method for manufacturing cutting mark on display mother plate |
-
2020
- 2020-09-02 TW TW109130001A patent/TWI819236B/en active
- 2020-09-02 CN CN202021882786.1U patent/CN213266672U/en active Active
- 2020-09-03 JP JP2021514447A patent/JP7010410B2/en active Active
- 2020-09-03 CN CN202080061555.0A patent/CN114341393A/en active Pending
- 2020-09-03 KR KR1020227010862A patent/KR102504437B1/en active IP Right Grant
- 2020-09-03 KR KR1020227041353A patent/KR20220165793A/en not_active Application Discontinuation
- 2020-09-03 WO PCT/JP2020/033374 patent/WO2021045137A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20220165793A (en) | 2022-12-15 |
KR20220045254A (en) | 2022-04-12 |
CN213266672U (en) | 2021-05-25 |
JP7010410B2 (en) | 2022-01-26 |
KR102504437B1 (en) | 2023-02-27 |
WO2021045137A1 (en) | 2021-03-11 |
TWI819236B (en) | 2023-10-21 |
JPWO2021045137A1 (en) | 2021-03-11 |
CN114341393A (en) | 2022-04-12 |
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