TW202209699A - 氮化物半導體紫外線發光元件 - Google Patents

氮化物半導體紫外線發光元件 Download PDF

Info

Publication number
TW202209699A
TW202209699A TW110122367A TW110122367A TW202209699A TW 202209699 A TW202209699 A TW 202209699A TW 110122367 A TW110122367 A TW 110122367A TW 110122367 A TW110122367 A TW 110122367A TW 202209699 A TW202209699 A TW 202209699A
Authority
TW
Taiwan
Prior art keywords
layer
region
algan
type
aln
Prior art date
Application number
TW110122367A
Other languages
English (en)
Chinese (zh)
Inventor
平野光
長澤陽祐
Original Assignee
日商創光科學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商創光科學股份有限公司 filed Critical 日商創光科學股份有限公司
Publication of TW202209699A publication Critical patent/TW202209699A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

Landscapes

  • Led Devices (AREA)
TW110122367A 2020-08-21 2021-06-18 氮化物半導體紫外線發光元件 TW202209699A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
WOPCT/JP2020/031620 2020-08-21
PCT/JP2020/031620 WO2022038769A1 (ja) 2020-08-21 2020-08-21 窒化物半導体紫外線発光素子

Publications (1)

Publication Number Publication Date
TW202209699A true TW202209699A (zh) 2022-03-01

Family

ID=80322627

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110122367A TW202209699A (zh) 2020-08-21 2021-06-18 氮化物半導體紫外線發光元件

Country Status (6)

Country Link
US (1) US12446368B2 (https=)
JP (1) JP7421657B2 (https=)
KR (1) KR102846271B1 (https=)
CN (1) CN116114073B (https=)
TW (1) TW202209699A (https=)
WO (1) WO2022038769A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI919016B (zh) 2022-04-18 2026-03-21 日商日機裝股份有限公司 氮化物半導體紫外光發光元件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5142371B2 (ja) 2007-11-15 2013-02-13 国立大学法人東北大学 紫外線窒化物半導体発光素子およびその製造方法
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
US9412911B2 (en) * 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
US9680056B1 (en) 2016-07-08 2017-06-13 Bolb Inc. Ultraviolet light-emitting device with a heavily doped strain-management interlayer
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI919016B (zh) 2022-04-18 2026-03-21 日商日機裝股份有限公司 氮化物半導體紫外光發光元件

Also Published As

Publication number Publication date
CN116114073B (zh) 2025-06-27
JP7421657B2 (ja) 2024-01-24
JPWO2022038769A1 (https=) 2022-02-24
US12446368B2 (en) 2025-10-14
WO2022038769A1 (ja) 2022-02-24
KR20230031930A (ko) 2023-03-07
KR102846271B1 (ko) 2025-08-13
CN116114073A (zh) 2023-05-12
US20230261139A1 (en) 2023-08-17

Similar Documents

Publication Publication Date Title
US20210043804A1 (en) Nitride semiconductor ultraviolet light-emitting element
TW202209699A (zh) 氮化物半導體紫外線發光元件
TWI828945B (zh) 氮化物半導體紫外線發光元件
TWI851832B (zh) 氮化物半導體紫外線發光元件及其製造方法
US12155006B2 (en) Light-emitting diode and manufacturing method
TW202213814A (zh) 氮化物半導體紫外線發光元件
TWI881114B (zh) 氮化物半導體紫外線發光元件及其製造方法
JP7614449B2 (ja) 窒化物半導体紫外線発光素子
TWI907573B (zh) 氮化物半導體紫外線發光元件及其製造方法
JP7672778B2 (ja) 窒化物半導体紫外線発光素子の製造方法、及び、窒化物半導体紫外線発光素子
TW202218178A (zh) 氮化物半導體紫外線發光元件