CN116114073B - 氮化物半导体紫外线发光元件 - Google Patents

氮化物半导体紫外线发光元件 Download PDF

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Publication number
CN116114073B
CN116114073B CN202080103245.0A CN202080103245A CN116114073B CN 116114073 B CN116114073 B CN 116114073B CN 202080103245 A CN202080103245 A CN 202080103245A CN 116114073 B CN116114073 B CN 116114073B
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layer
algan
type
mole fraction
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Chinese (zh)
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CN116114073A (zh
Inventor
平野光
长泽阳祐
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

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CN202080103245.0A 2020-08-21 2020-08-21 氮化物半导体紫外线发光元件 Active CN116114073B (zh)

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Application Number Priority Date Filing Date Title
PCT/JP2020/031620 WO2022038769A1 (ja) 2020-08-21 2020-08-21 窒化物半導体紫外線発光素子

Publications (2)

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CN116114073A CN116114073A (zh) 2023-05-12
CN116114073B true CN116114073B (zh) 2025-06-27

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US (1) US12446368B2 (https=)
JP (1) JP7421657B2 (https=)
KR (1) KR102846271B1 (https=)
CN (1) CN116114073B (https=)
TW (1) TW202209699A (https=)
WO (1) WO2022038769A1 (https=)

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Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5142371B2 (ja) 2007-11-15 2013-02-13 国立大学法人東北大学 紫外線窒化物半導体発光素子およびその製造方法
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
US9412911B2 (en) * 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
US9680056B1 (en) 2016-07-08 2017-06-13 Bolb Inc. Ultraviolet light-emitting device with a heavily doped strain-management interlayer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps;K.Kojima et al;Applied Physics Letter;20190107;第第114卷卷(第011102(2019)期);011102-1 - 011102-5 *

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TW202209699A (zh) 2022-03-01
JP7421657B2 (ja) 2024-01-24
JPWO2022038769A1 (https=) 2022-02-24
US12446368B2 (en) 2025-10-14
WO2022038769A1 (ja) 2022-02-24
KR20230031930A (ko) 2023-03-07
KR102846271B1 (ko) 2025-08-13
CN116114073A (zh) 2023-05-12
US20230261139A1 (en) 2023-08-17

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