JPWO2022038769A1 - - Google Patents
Info
- Publication number
- JPWO2022038769A1 JPWO2022038769A1 JP2022543243A JP2022543243A JPWO2022038769A1 JP WO2022038769 A1 JPWO2022038769 A1 JP WO2022038769A1 JP 2022543243 A JP2022543243 A JP 2022543243A JP 2022543243 A JP2022543243 A JP 2022543243A JP WO2022038769 A1 JPWO2022038769 A1 JP WO2022038769A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/031620 WO2022038769A1 (ja) | 2020-08-21 | 2020-08-21 | 窒化物半導体紫外線発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022038769A1 true JPWO2022038769A1 (https=) | 2022-02-24 |
| JPWO2022038769A5 JPWO2022038769A5 (https=) | 2023-03-07 |
| JP7421657B2 JP7421657B2 (ja) | 2024-01-24 |
Family
ID=80322627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022543243A Active JP7421657B2 (ja) | 2020-08-21 | 2020-08-21 | 窒化物半導体紫外線発光素子 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12446368B2 (https=) |
| JP (1) | JP7421657B2 (https=) |
| KR (1) | KR102846271B1 (https=) |
| CN (1) | CN116114073B (https=) |
| TW (1) | TW202209699A (https=) |
| WO (1) | WO2022038769A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023203599A1 (ja) * | 2022-04-18 | 2023-10-26 | 日機装株式会社 | 窒化物半導体紫外線発光素子 |
| JP7405902B2 (ja) * | 2022-05-20 | 2023-12-26 | 日機装株式会社 | 窒化物半導体発光素子 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009123969A (ja) * | 2007-11-15 | 2009-06-04 | Tohoku Univ | 紫外線窒化物半導体発光素子およびその製造方法 |
| US20140103289A1 (en) * | 2010-04-30 | 2014-04-17 | Yitao Liao | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| JP2018022883A (ja) * | 2016-07-08 | 2018-02-08 | ボルブ インク． | 高度にドープされた歪み管理中間層を有する紫外線発光デバイス |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014178288A1 (ja) | 2013-04-30 | 2014-11-06 | 創光科学株式会社 | 紫外線発光装置 |
| US9412911B2 (en) * | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
| WO2016157518A1 (ja) | 2015-04-03 | 2016-10-06 | 創光科学株式会社 | 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置 |
-
2020
- 2020-08-21 US US18/013,408 patent/US12446368B2/en active Active
- 2020-08-21 CN CN202080103245.0A patent/CN116114073B/zh active Active
- 2020-08-21 KR KR1020237003645A patent/KR102846271B1/ko active Active
- 2020-08-21 JP JP2022543243A patent/JP7421657B2/ja active Active
- 2020-08-21 WO PCT/JP2020/031620 patent/WO2022038769A1/ja not_active Ceased
-
2021
- 2021-06-18 TW TW110122367A patent/TW202209699A/zh unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009123969A (ja) * | 2007-11-15 | 2009-06-04 | Tohoku Univ | 紫外線窒化物半導体発光素子およびその製造方法 |
| US20140103289A1 (en) * | 2010-04-30 | 2014-04-17 | Yitao Liao | High efficiency ultraviolet light emitting diode with band structure potential fluctuations |
| JP2018022883A (ja) * | 2016-07-08 | 2018-02-08 | ボルブ インク． | 高度にドープされた歪み管理中間層を有する紫外線発光デバイス |
| WO2019159265A1 (ja) * | 2018-02-14 | 2019-08-22 | 創光科学株式会社 | 窒化物半導体紫外線発光素子 |
Non-Patent Citations (3)
| Title |
|---|
| KOJIMA, K. ET AL.: "Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an A", APPLIED PHYSICS LETTERS, vol. 114, JPN7020002979, 7 January 2019 (2019-01-07), US, pages 011102, ISSN: 0005167349 * |
| NAGASAWA, YOSUKE ET AL.: "Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based", JOUANAL OF APPLIED PHYSICS, vol. 126, JPN7020002980, 3 December 2019 (2019-12-03), US, pages 215703, ISSN: 0005167351 * |
| SHL，HENGZHI ET AL.: "Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically des", OPTICS COMMUNICATIONS, vol. 441, JPN7023003698, 27 February 2019 (2019-02-27), pages 149 - 154, ISSN: 0005167350 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116114073B (zh) | 2025-06-27 |
| TW202209699A (zh) | 2022-03-01 |
| JP7421657B2 (ja) | 2024-01-24 |
| US12446368B2 (en) | 2025-10-14 |
| WO2022038769A1 (ja) | 2022-02-24 |
| KR20230031930A (ko) | 2023-03-07 |
| KR102846271B1 (ko) | 2025-08-13 |
| CN116114073A (zh) | 2023-05-12 |
| US20230261139A1 (en) | 2023-08-17 |
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