KR102846271B1 - 질화물 반도체 자외선 발광 소자 - Google Patents

질화물 반도체 자외선 발광 소자

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Publication number
KR102846271B1
KR102846271B1 KR1020237003645A KR20237003645A KR102846271B1 KR 102846271 B1 KR102846271 B1 KR 102846271B1 KR 1020237003645 A KR1020237003645 A KR 1020237003645A KR 20237003645 A KR20237003645 A KR 20237003645A KR 102846271 B1 KR102846271 B1 KR 102846271B1
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South Korea
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region
layer
algan
type
mole fraction
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KR1020237003645A
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English (en)
Korean (ko)
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KR20230031930A (ko
Inventor
아키라 히라노
요스케 나가사와
Original Assignee
니기소 가부시키가이샤
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Publication of KR20230031930A publication Critical patent/KR20230031930A/ko
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Publication of KR102846271B1 publication Critical patent/KR102846271B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

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  • Led Devices (AREA)
KR1020237003645A 2020-08-21 2020-08-21 질화물 반도체 자외선 발광 소자 Active KR102846271B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/031620 WO2022038769A1 (ja) 2020-08-21 2020-08-21 窒化物半導体紫外線発光素子

Publications (2)

Publication Number Publication Date
KR20230031930A KR20230031930A (ko) 2023-03-07
KR102846271B1 true KR102846271B1 (ko) 2025-08-13

Family

ID=80322627

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237003645A Active KR102846271B1 (ko) 2020-08-21 2020-08-21 질화물 반도체 자외선 발광 소자

Country Status (6)

Country Link
US (1) US12446368B2 (https=)
JP (1) JP7421657B2 (https=)
KR (1) KR102846271B1 (https=)
CN (1) CN116114073B (https=)
TW (1) TW202209699A (https=)
WO (1) WO2022038769A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5142371B2 (ja) 2007-11-15 2013-02-13 国立大学法人東北大学 紫外線窒化物半導体発光素子およびその製造方法
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
US9412911B2 (en) * 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置
US9680056B1 (en) 2016-07-08 2017-06-13 Bolb Inc. Ultraviolet light-emitting device with a heavily doped strain-management interlayer
WO2019159265A1 (ja) * 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Also Published As

Publication number Publication date
CN116114073B (zh) 2025-06-27
TW202209699A (zh) 2022-03-01
JP7421657B2 (ja) 2024-01-24
JPWO2022038769A1 (https=) 2022-02-24
US12446368B2 (en) 2025-10-14
WO2022038769A1 (ja) 2022-02-24
KR20230031930A (ko) 2023-03-07
CN116114073A (zh) 2023-05-12
US20230261139A1 (en) 2023-08-17

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