JP7421657B2 - 窒化物半導体紫外線発光素子 - Google Patents

窒化物半導体紫外線発光素子 Download PDF

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JP7421657B2
JP7421657B2 JP2022543243A JP2022543243A JP7421657B2 JP 7421657 B2 JP7421657 B2 JP 7421657B2 JP 2022543243 A JP2022543243 A JP 2022543243A JP 2022543243 A JP2022543243 A JP 2022543243A JP 7421657 B2 JP7421657 B2 JP 7421657B2
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JPWO2022038769A1 (https=
JPWO2022038769A5 (https=
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光 平野
陽祐 長澤
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Nikkiso Co Ltd
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Nikkiso Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers

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JP2022543243A 2020-08-21 2020-08-21 窒化物半導体紫外線発光素子 Active JP7421657B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/031620 WO2022038769A1 (ja) 2020-08-21 2020-08-21 窒化物半導体紫外線発光素子

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JPWO2022038769A1 JPWO2022038769A1 (https=) 2022-02-24
JPWO2022038769A5 JPWO2022038769A5 (https=) 2023-03-07
JP7421657B2 true JP7421657B2 (ja) 2024-01-24

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US (1) US12446368B2 (https=)
JP (1) JP7421657B2 (https=)
KR (1) KR102846271B1 (https=)
CN (1) CN116114073B (https=)
TW (1) TW202209699A (https=)
WO (1) WO2022038769A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023203599A1 (ja) * 2022-04-18 2023-10-26 日機装株式会社 窒化物半導体紫外線発光素子
JP7405902B2 (ja) * 2022-05-20 2023-12-26 日機装株式会社 窒化物半導体発光素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123969A (ja) 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
JP2018022883A (ja) 2016-07-08 2018-02-08 ボルブ インク． 高度にドープされた歪み管理中間層を有する紫外線発光デバイス
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014178288A1 (ja) 2013-04-30 2014-11-06 創光科学株式会社 紫外線発光装置
US9412911B2 (en) * 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
WO2016157518A1 (ja) 2015-04-03 2016-10-06 創光科学株式会社 窒化物半導体紫外線発光素子及び窒化物半導体紫外線発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009123969A (ja) 2007-11-15 2009-06-04 Tohoku Univ 紫外線窒化物半導体発光素子およびその製造方法
US20140103289A1 (en) 2010-04-30 2014-04-17 Yitao Liao High efficiency ultraviolet light emitting diode with band structure potential fluctuations
JP2018022883A (ja) 2016-07-08 2018-02-08 ボルブ インク． 高度にドープされた歪み管理中間層を有する紫外線発光デバイス
WO2019159265A1 (ja) 2018-02-14 2019-08-22 創光科学株式会社 窒化物半導体紫外線発光素子

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KOJIMA, K. et al.，Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AlN template with macrosteps，Applied Physics Letters，米国，AIP Publishing，2019年01月07日，Vol.114，011102
NAGASAWA, Yosuke et al.，Two-dimensional analysis of the nonuniform quantum yields of multiple quantum wells for AlGaN-based，Jouanal of Applied Physics，米国，AIP Publishing，2019年12月03日，Vol.126，215703
SHl，Hengzhi et al.，Performance improvements of AlGaN-based deep-ultraviolet light-emitting diodes with specifically designed irregular sawtooth hole and electron b1ocking 1ayers，Optics Communications，2019年02月27日，Vol. 441，P.149-154

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Publication number Publication date
CN116114073B (zh) 2025-06-27
TW202209699A (zh) 2022-03-01
JPWO2022038769A1 (https=) 2022-02-24
US12446368B2 (en) 2025-10-14
WO2022038769A1 (ja) 2022-02-24
KR20230031930A (ko) 2023-03-07
KR102846271B1 (ko) 2025-08-13
CN116114073A (zh) 2023-05-12
US20230261139A1 (en) 2023-08-17

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