TW202202651A - CVD reactor and method for handling a process chamber cover plate - Google Patents
CVD reactor and method for handling a process chamber cover plate Download PDFInfo
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- TW202202651A TW202202651A TW110105377A TW110105377A TW202202651A TW 202202651 A TW202202651 A TW 202202651A TW 110105377 A TW110105377 A TW 110105377A TW 110105377 A TW110105377 A TW 110105377A TW 202202651 A TW202202651 A TW 202202651A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
本發明係有關於一種操作向上界定CVD反應器之製程室之蓋板的方法,特別是全自動或半自動更換該蓋板之方法。本發明更有關於一種CVD反應器之改良,其中,可藉由升降元件將該蓋板自下降位置提昇至安裝位置。The present invention relates to a method of operating a cover plate defining a process chamber of a CVD reactor upwards, in particular a method of fully automatic or semi-automatic replacement of the cover plate. The present invention further relates to an improvement of a CVD reactor, wherein the cover plate can be lifted from a lowered position to an installation position by means of a lifting element.
DE 10 2012 110 125 A1揭露一種CVD反應器。其蓋板係佈置於蓮蓬頭之出氣板下方的、帶有通氣開口之罩板,該罩板透過基板座及蓋板同時進行豎向位移而被送入安裝位置,其中,升降裝置使基板座在豎向上位移,且基板座在其表面承載該罩板。設有固定構件,其能實現蓋板之自動固定。一種相似裝置記載於DE 10 2019 117 479 A1。WO 2007/060143 A1亦揭露一種藉由保持元件固定於出氣板下方之蓋板。此外,JP 5721132 B2亦屬於先前技術。DE 10 2012 110 125 A1 discloses a CVD reactor. The cover plate is a cover plate with ventilation openings arranged below the air outlet plate of the shower head. The cover plate is sent into the installation position through the vertical displacement of the base plate base and the cover plate, wherein the lifting device makes the base plate seat in the installation position. Displaced vertically, and the base plate holder carries the cover plate on its surface. A fixing member is provided, which can realize the automatic fixing of the cover plate. A similar device is described in
本發明之目的在於對同類型裝置及同類型方法進行有利於使用之改良。The purpose of the present invention is to improve the same type of device and the same type of method which are beneficial to use.
該目的藉由申請專利範圍所給出之發明而達成,其中,附屬項不僅為並列請求項中所給出之發明的有利改良方案,亦為能達成該目的之獨立解決方案。This object is achieved by the invention given in the scope of the patent application, wherein the subsidiary item is not only an advantageous improvement of the invention given in the concurrent claim, but also an independent solution to achieve the object.
首先且實質上提出:將包圍基板座之物體用作升降元件,或者將在基板座邊緣處支撐基板座之物體用作升降元件。該物體可為一件式或多件式。包圍基板座之物體可為封閉的物體或者為在周向上間斷的物體。升降元件可例如為管子。該物體可由數個在周向上並排設置的子物體形成,舉例而言,該物體可具有與圓環相符之輪廓。因此,該物體可具有例如圓環形輪廓。然而,該物體亦可由數個沿豎向延伸之桿子、柱子或類似之物形成,該等桿子、柱子或類似之物佈置於基板座或加熱裝置周圍不同的方位位置上。在本發明之較佳技術方案中,升降元件可例如像DE 10 2007 027 704 A1中所揭露的那樣由承載基板座之承載元件形成。承載元件可具有上緣並且呈管形。在製程位置上,基板座支撐在上緣上。其中,基板座之邊緣放置在上緣上。為了使用此承載元件來提昇蓋板,事先透過裝載開口自CVD反應器之殼體中取出基板座。為此,將封閉裝載開口的門打開。可如下設置:為此亦須下降包圍基板座的環形氣體出口構件,使得氣體出口構件不位於在表面延伸平面中運動之基板座的運動路徑上。升降元件可固定在可豎向位移的載體裝置上。載體裝置可以是可在豎向上位移。此外,載體裝置亦可承載加熱裝置,加熱裝置在製程位置上自下方加熱基板座。在本發明的一個變體中,氣體出口構件可執行升降元件之功能。在一個較佳變體中,蓋板之安裝係自動進行,且特別是全自動進行。特別是如下設置:蓋板之更換係半自動或全自動進行。在本發明的一個變體中,蓋板可固定於殼體之蓋子上,該蓋子將朝向上方的殼體開口封閉。在此蓋子上可固定呈蓮蓬頭形之氣體入口構件。蓋板可為保護板,該保護板平行於氣體入口構件之出氣面延伸。出氣面可具有數個通向蓋板之出氣開口。在出氣面與具有通氣開口之蓋板的頂面之間存在間隙,自出氣面排出的氣體可分佈在該間隙中。蓋板之邊緣可形成密封凸起,該密封凸起在蓋板安裝完畢後緊密貼靠固定區段,例如貼靠固定環或類似之物。蓋板可藉由諸如螺釘、卡口等固定構件固定於固定區段。該固定構件或數個固定構件亦可佈置於蓋板之外環形區以外。可在蓋板之整個表面上設置固定構件,以將蓋板與蓋子或氣體入口構件連接起來。該等固定構件亦可鄰近蓋板中心佈置。此等固定構件較佳被設計成允許蓋板相對於氣體入口構件發生輕微的橫向滑動而不卡住。藉此可補償不同程度之熱膨脹。在本發明之第一變體中,更換蓋板時,將此前之沉積製程所使用的已形成有覆層之蓋板更換成清潔過的蓋板。為此,可將升降元件送入提昇位置,在該提昇位置上,升降元件支撐被固定在固定區段上之蓋板。在升降元件貼靠蓋板之此位置上,鬆開用以將蓋板固定在固定區段上的固定構件。下降升降元件以將蓋板送入一位置,在該位置上,藉由經裝載開口伸入殼體之內部空間的抓取器可抓取蓋板,以便能透過裝載開口自內部空間中移除蓋板。以相反順序將清潔過的蓋板固定於固定區段。在本發明之第二變體中,提昇蓋子,該蓋子封閉殼體之開口並承載蓋板。在提昇位置上使用臨時固定構件,以將蓋板固定於固定區段。可手動或自動鬆開用以將蓋板固定在固定區段上的螺釘或其他固定構件。接著將蓋子下降至蓋板由升降元件承載之位置。在此位置上鬆開臨時固定構件。下降升降元件以將蓋板與固定區段分離,並且將蓋板送入可用抓取器抓取蓋板之位置。將清潔過的蓋板放置於升降元件上。將升降元件送入提昇位置,在該提昇位置上,蓋板貼靠固定區段並且藉由臨時固定構件而固定於該處。可將蓋子進一步提昇至可安裝螺釘或其他固定構件之位置。移除臨時固定構件。可將蓋子送入關閉位置。可將C形夾具用作臨時固定構件,藉由該等C形夾具將蓋板暫時保持在固定區段上,特別是保持在蓋子上。可藉由能夠穿過裝載開口之機器手臂來將蓋板運出內部空間或送入內部空間。全自動安裝時,藉由可自動操作的固定構件連接蓋板與固定區段。半自動安裝時,使用臨時固定構件如C形夾具來將蓋板暫時固定於固定區段。此操作較佳係在蓋子被送入第一打開位置後進行,其中,升降元件使蓋板越過殼體開口之上緣,使得蓋板邊緣為可及的,臨時固定構件可被固定在該邊緣上。半自動安裝的下一個步驟乃是進一步提昇蓋子,直至蓋板之朝向下方的寬側表面為可及的,以便將固定構件安裝於該處,該等固定構件可例如為螺紋元件。全自動安裝則不需要此等中間步驟。可在蓋子處於關閉狀態時安裝蓋板。完成對固定構件的固定後,可下降升降元件。若是將在製程位置上承載基板座之承載元件用作升降元件,則須在更換蓋板之前自製程室移除基板座。此係在下降氣體出口構件之後進行,該氣體出口構件在製程位置上位於待取出之基板座的運動路徑上。更換蓋板後,帶有待塗佈基板的基板座可透過裝載開口由已下降的氣體出口構件送入製程室。此係藉由機器手臂來完成,該機器手臂將基板座放置於承載元件上。而後提昇氣體出口構件,直至氣體出口構件之上緣觸碰蓋板邊緣或觸碰殼體之包圍蓋板的區段。可由石英、鋼(特別是不鏽鋼)或陶瓷材料構成的蓋板具有可供被送入蓋板與氣體入口構件之間的間隙中之製程氣體通過的通過開口。包圍基板座之升降元件可由鋼(特別是不鏽鋼)、石英或陶瓷材料構成。升降元件可由管形物體形成,在該管形物體之空腔中設有用於加熱基板座之加熱裝置。加熱裝置可與升降元件一同豎向位移。升降元件在製程位置上亦可起襯件作用,將基板座下方之空間與製程氣體隔離。因此,升降元件可提供隔離管之功能。First and substantially it is proposed to use the object surrounding the substrate holder as the lifting element, or the object supporting the substrate holder at the edge of the substrate holder as the lifting element. The object may be one-piece or multi-piece. The object surrounding the substrate holder can be a closed object or a circumferentially interrupted object. The lifting element can be, for example, a pipe. The object may be formed by several sub-objects arranged side by side in the circumferential direction, for example, the object may have a contour conforming to a circular ring. Thus, the object may have, for example, a circular profile. However, the object may also be formed by several vertically extending rods, columns or the like arranged in different azimuth positions around the base plate holder or the heating device. In a preferred solution of the present invention, the lifting element can be formed by a carrier element carrying a substrate holder, for example as disclosed in DE 10 2007 027 704 A1. The carrier element may have an upper edge and be tubular. In the process position, the substrate holder is supported on the upper edge. Wherein, the edge of the base plate seat is placed on the upper edge. In order to use this carrier element to lift the cover plate, the substrate holder was previously removed from the housing of the CVD reactor through the loading opening. To do this, open the door closing the loading opening. It can be provided that the annular gas outlet member surrounding the substrate holder is also lowered for this purpose, so that the gas outlet member is not located in the movement path of the substrate holder moving in the plane of surface extension. The lifting element can be fastened to a vertically displaceable carrier device. The carrier device may be vertically displaceable. In addition, the carrier device can also carry a heating device, and the heating device heats the substrate holder from below at the process position. In a variant of the invention, the gas outlet member may perform the function of a lifting element. In a preferred variant, the mounting of the cover plate is carried out automatically, and in particular fully automatically. In particular the following settings: the replacement of the cover is semi-automatic or fully automatic. In a variant of the invention, the cover plate can be fastened to a cover of the housing which closes the opening of the housing facing upwards. A showerhead-shaped gas inlet member can be fixed on the cover. The cover plate may be a protective plate extending parallel to the gas outlet face of the gas inlet member. The air outlet surface may have several air outlet openings leading to the cover plate. There is a gap between the gas outlet surface and the top surface of the cover plate with the vent opening, in which gap the gas exhausted from the gas outlet surface can be distributed. The edges of the cover plate may form sealing projections which, after the cover plate has been installed, closely abut against the fixing section, for example against a fixing ring or the like. The cover plate can be fixed to the fixing section by fixing members such as screws, bayonet and the like. The fixing member or several fixing members can also be arranged outside the annular area outside the cover plate. Fixing members may be provided over the entire surface of the cover plate to connect the cover plate to the lid or gas inlet member. The fixing members can also be arranged adjacent to the center of the cover plate. These securing members are preferably designed to allow slight lateral sliding of the cover plate relative to the gas inlet member without jamming. Thereby, different degrees of thermal expansion can be compensated. In a first variant of the invention, when the cover plate is replaced, the cover plate that has been formed with the coating used in the previous deposition process is replaced with a cleaned cover plate. For this purpose, the lifting element can be brought into a lifting position in which it supports the cover plate which is fastened to the fixing section. In this position in which the lifting element rests on the cover plate, the fixing means for fixing the cover plate on the fixing section are released. The lifting element is lowered to feed the cover plate into a position in which the cover plate can be grasped by means of a gripper extending into the interior space of the housing through the loading opening so that it can be removed from the interior space through the loading opening cover plate. Secure the cleaned cover to the securing section in reverse order. In a second variant of the invention, the lid is lifted, which closes the opening of the housing and carries the cover plate. Temporary securing members are used in the raised position to secure the cover plate to the securing section. The screws or other securing means used to secure the cover to the securing section can be loosened manually or automatically. The cover is then lowered to a position where the cover plate is carried by the lifting element. Release the temporary fixing member in this position. The lifting element is lowered to separate the cover plate from the fixing section and feed the cover plate into a position where the cover plate can be grasped by the gripper. Place the cleaned cover on the lift element. The lifting element is brought into the lifting position in which the cover rests against the fixing section and is fixed there by means of the temporary fixing means. The cover can be raised further to a position where screws or other fixing means can be installed. Remove temporary fixing members. The lid can be fed into the closed position. C-shaped clamps can be used as temporary fixing means, by means of which C-shaped clamps the cover plate is temporarily held on the fixing section, in particular on the cover. The cover plate can be transported out of or into the interior space by means of a robotic arm that can pass through the loading opening. In fully automatic installation, the cover plate and the fixing section are connected by means of automatically operable fixing members. In semi-automatic installation, temporary fixing members such as C-shaped clamps are used to temporarily fix the cover plate to the fixing section. This is preferably carried out after the lid has been brought into the first open position, wherein the lifting element moves the lid over the upper edge of the housing opening, making accessible the edge of the lid to which the temporary securing member can be secured superior. The next step in the semi-automatic installation is to further lift the cover until the broad downward facing surface of the cover plate is accessible in order to install there fixing means, which may for example be threaded elements. A fully automatic installation does not require these intermediate steps. The cover can be installed with the cover closed. After the fixing of the fixing member is completed, the lifting element can be lowered. If the carrier element that carries the substrate holder at the process position is used as a lifting element, the substrate holder must be removed from the process chamber before replacing the cover plate. This is done after lowering the gas outlet member, which is located in the motion path of the substrate holder to be removed at the process position. After the cover plate is replaced, the substrate holder with the substrate to be coated can be fed into the process chamber from the lowered gas outlet member through the loading opening. This is done by a robotic arm, which places the substrate holder on the carrier element. The gas outlet member is then lifted until the upper edge of the gas outlet member touches the edge of the cover plate or the section of the housing that surrounds the cover plate. The cover plate, which may be constructed of quartz, steel (especially stainless steel) or ceramic material, has through openings through which process gas is fed into the gap between the cover plate and the gas inlet member. The lifting element surrounding the base plate holder may consist of steel (especially stainless steel), quartz or ceramic material. The lifting element may be formed from a tubular body, in the cavity of which there is provided heating means for heating the substrate holder. The heating device can be displaced vertically together with the lifting element. The lifting element can also act as a lining at the process position, isolating the space below the substrate holder from the process gas. Therefore, the lifting element can provide the function of the isolation tube.
本發明更有關於該蓋板之改良。蓋板在其邊緣附近具有朝氣體入口構件或出氣板定向之環形凸起。此環形凸起界定了出氣板與蓋板之間的間隙。環形凸起較佳以緊密接觸之方式貼靠氣體入口構件之平直底面或氣體入口構件所形成之出氣板。出氣板可在凸起區域內具有斜切邊緣面。凸起在此斜切邊緣面之區域中延伸。凸起防止被送入間隙中的製程氣體發生側向外泄。The present invention further relates to the improvement of the cover plate. The cover plate has an annular projection near its edge oriented towards the gas inlet member or the gas outlet plate. The annular protrusion defines the gap between the air outlet plate and the cover plate. Preferably, the annular protrusion is in close contact with the flat bottom surface of the gas inlet member or the gas outlet plate formed by the gas inlet member. The air outlet plate may have a chamfered edge face in the raised area. The protrusions extend in the region of this chamfered edge face. The protrusions prevent lateral escape of the process gas fed into the gap.
本發明之另一態樣係有關於該殼體之蓋子的改良。氣體入口構件為殼體蓋子的一體式組成部分。為此,殼體蓋子形成環形接片,該環形接片與蓋子之蓋子板(Deckelplatte)同質地(materialeinheitlich)形成。環形接片具有徑向朝外之壁部,該壁部在蓋子安裝到位後貼靠殼體之壁的內表面。環形接片進一步具有徑向朝內的表面,氣體入口構件之外緣區段貼靠該表面。氣體入口構件較佳被環形接片包圍並且鑲嵌在環形接片中。Another aspect of the present invention relates to improvements in the cover of the housing. The gas inlet member is an integral part of the housing cover. For this purpose, the housing cover forms an annular web which is formed homogeneously with the cover plate of the cover. The annular tab has a radially outwardly facing wall which abuts the inner surface of the wall of the housing after the cover is in place. The annular tab further has a radially inward facing surface against which the outer edge section of the gas inlet member abuts. The gas inlet member is preferably surrounded by and embedded in the annular tab.
圖1以CVD反應器截面之形式示意性地示出該CVD反應器之主要組成部分。CVD反應器具有氣密殼體1,該殼體具有朝向上方的開口24。在圖1所示之製程位置上,開口24被蓋子2封閉。蓋子2承載蓮蓬頭形式之氣體入口構件4。氣體入口構件4具有向下由出氣板21界定之氣體分配容積,該出氣板以其底面形成出氣面。出氣板21具有數個出氣開口17,氣體可透過該等出氣開口自氣體分配室17排出至間隙15中。間隙15在出氣板21與蓋板6之間延伸,該蓋板佈置於氣體入口構件4下方。實質上呈圓盤形之蓋板6的邊緣具有凸起14,該凸起抵頂出氣板21之邊緣區段,其中,凸起14之高度界定了間隙15之高度。然而,亦可設置其他間隔元件以界定該間隙,圖中未示出該等其他間隔元件,該等其他間隔元件佈置於被凸起14包圍的表面以內。藉由該等間隔元件可補償熱變形。間隙15之高度亦可由別的間隔元件進一步界定。蓋板6具有數個通氣開口16,進入間隙15中的氣體可透過該等通氣開口流入佈置於蓋板6下方之製程室23中。蓋板6向上界定製程室23,基板座5則向下界定製程室23。Figure 1 schematically shows the main components of the CVD reactor in the form of a cross-section of the CVD reactor. The CVD reactor has a gas-
蓋板6之設有環繞式凸起14之邊緣區域的材料厚度可小於中央區域之材料厚度,其中,材料厚度較佳在上側減小,從而可與氣體入口構件之間形成向外升高之間隙。材料厚度亦可在上側減小,從而與氣體入口構件之間形成向外升高之間隙。The material thickness of the edge region of the
基板座5之邊緣擱在承載元件上,該承載元件在實施例中可呈管形。該承載元件特別是可由保護管11形成。保護管11包圍一個具有加熱裝置7之配置,該加熱裝置位於基板座5下方並且具有用於為加熱裝置7供電之載體板12。藉由升降裝置10可提昇承載元件(即尤指保護管11)及加熱裝置7。在本發明的一個變體中,供基板座邊緣支撐的管子11具有承載管之功能。管子11形成基板座5之載體。The edge of the
製程室被環形的氣體出口構件3包圍。藉由另一升降裝置可將氣體出口構件3自圖1所示之製程位置(在該製程位置上,氣體出口構件佈置於裝載開口18前方)下降至裝載開口18暢通之位置。在如圖2所示之此位置上,經裝載開口18伸入殼體之內部空間22的抓取器可抓取基板座5,以便能如圖3所示透過裝載開口18自殼體1中取出該基板座並更換成另一基板座5。以符號9標示的元件形成氣體出口管,藉由該氣體出口管可向外運送氣體出口構件3中所收集之氣體。然而,圖中以符號9標示的元件亦可指代可用來升降氣體出口構件3之該另一升降裝置。The process chamber is surrounded by an annular
全自動更換蓋板6時,自下方托住蓋板6之邊緣區域的、在實施例中由保護管所形成之升降元件11向上移行以支撐蓋板6,使得將蓋板保持在蓋子2或氣體入口構件4上的固定構件能夠例如如前述先前技術所建議的那樣自動鬆開。接著,下降升降元件11以將蓋板6送入取出位置,在該取出位置上,藉由經裝載開口18伸入內部空間22的抓取臂可自內部空間22中取出蓋板。以相反順序將更換好的蓋板6固定於蓋子2或氣體入口構件4上。將蓋板6放置於升降元件11上。提昇升降元件11,直至蓋板6或凸起14貼靠氣體入口構件4或蓋子2。而後將固定構件送入固定位置。可設置附加的定心構件,藉由該等定心構件可將蓋板6送入中心位置。然而,定心構件亦可由固定構件形成。During the fully automatic replacement of the
半自動更換蓋板6時,將蓋子2提昇至圖4所示之第一開啟位置,在該第一開啟位置上,蓋子特別是藉由升降元件11而佈置於開口邊緣24'上方約10 mm至30 mm處。在此第一開啟位置上,將C形夾具19安裝在藉由螺釘20(見圖6)固定於蓋子2之固定區段21上的蓋板6上。接著,將蓋子2送入圖5所示之第二打開位置。作為替代方案,亦可將蓋子2直接送入圖5所示之開啟位置,以便將C形夾具19所形成的臨時固定構件固定於該處。When the
圖6示出如何在第二開啟位置鬆開上述用於將蓋板6持久固定於蓋子2之螺釘20。將蓋子2連同僅由夾具19保持的蓋板6一起下降至第一開啟位置。在此之前,在此實施例中具有升降元件之功能的保護管11已被送入提昇的安裝位置,在該安裝位置上,升降元件11之上緣支撐蓋板6。將夾具19移除,從而到達圖8所示之工作位置,在該工作位置上,蓋板6僅由升降元件11承載。在此位置上,蓋子2可由圖中未示出的其他保持構件保持。FIG. 6 shows how the
下降升降元件11以到達圖9所示之工作位置,在該工作位置上,蓋板6位於裝載開口18所處之平面內,因此,藉由以圖中未示出的抓取臂使蓋板6在其延伸平面內位移,便可透過裝載開口18自內部空間22中取出蓋板。The lifting
以實質上相反之順序將清潔過的蓋板6固定於蓋子2。為此,將蓋板6送入殼體1之內部空間22中,該殼體具有例如如圖10所示之工作位置。根據圖9所示,將蓋板6放置於升降元件11上。將升降元件11提昇至圖8所示之第一開啟位置,在該第一開啟位置上,蓋板6貼靠氣體入口構件4或蓋子2。安裝如圖7所示之臨時固定構件19,該等臨時固定構件將蓋板6保持在蓋子2上。其間可進行可能需要的定心。將蓋子2提昇至圖6所示之第二開啟位置,在該第二開啟位置上安裝螺釘20或其他固定構件,以將蓋板6持久固定於蓋子2。作為替代方案,亦可藉由永久固定構件20對蓋板6進行定心。The cleaned
可將夾具19移除。但亦可先將蓋子2下降至圖4所示之位置,以便在此位置上移除夾具19。隨後將蓋子2下降至圖3所示之關閉位置。將升降元件11送入下降位置。在此下降位置上,可將新的基板座5經裝載開口18送入內部空間22,在該處將基板座放置於升降元件11上。The
圖11以根據圖1a之視圖示出本發明的一個變體,在該變體中,蓋板6之邊緣可由環形氣體出口構件3之上部區段承載。在此變體中,氣體出口構件3不僅可自圖2所示之下降位置下降。氣體出口構件3更可自圖1所示之製程位置被送入圖中未示出的提昇位置,在該提昇位置上,氣體出口構件突出於邊緣24'之外,以便以此方式將蓋板6送入提昇位置。FIG. 11 shows a variant of the invention in the view according to FIG. 1 a in which the edge of the
圖1及圖1a示出由蓋子底面形成的環形接片25,該環形接片與由金屬構成的蓋子板同質地形成。此環形接片25具有徑向朝外的表面,該表面貼靠殼體1之壁的表面。當蓋子關閉時,環形接片25伸入開口24中。FIGS. 1 and 1 a show an
環形接片25包圍氣體入口構件4。環形接片25形成圓形容置室,接觸並固定於蓋子2之底面的氣體入口構件4嵌設在該容置室中。氣體入口構件4之外緣區段26較佳由出氣板21同質形成並且具有徑向朝外的壁,該壁貼靠環形接片25之徑向朝內的壁。環形接片25之高度較佳等於氣體入口構件4之高度,使得氣體入口構件4之朝向製程室23的表面與環形接片25之軸向面齊平。The
如圖1a所示,蓋板6之朝向氣體入口構件4的面在邊緣區域內傾斜延伸,使得蓋板6之材料厚度在邊緣處呈楔形減小。前文已描述過的凸起14延伸到此區域中並且觸抵氣體入口構件4或出氣板21。在實施例中,呈圓圈形延伸的凸起14貼靠外緣區段26。凸起14能夠防止經出氣開口17進入間隙15的製程氣體自間隙15側向外泄。As shown in FIG. 1 a , the face of the
前述實施係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩個、數個或所有特徵組合亦可相互組合,即:The foregoing embodiments are used to illustrate the inventions contained in the present application as a whole, and these inventions independently constitute improvements over the prior art through at least the following feature combinations, wherein two, several or all of these feature combinations are combined. Can also be combined with each other, namely:
一種CVD反應器,其特徵在於:該升降元件11由一個或數個包圍該基板座5或在該基板座之邊緣處支撐該基板座的物體所形成。A CVD reactor, characterized in that the lifting
一種方法,其特徵在於:該升降元件11由一個或數個包圍該基板座5或在該基板座之邊緣處支撐該基板座的物體所形成。A method, characterized in that the lifting
一種CVD反應器或一種方法,其特徵在於:該升降元件11為承載該基板座5之承載元件或者為包圍該基板座5之氣體出口構件3。A CVD reactor or a method, characterized in that: the lifting
一種CVD反應器或一種方法,其特徵在於:該升降元件11具有圓環形輪廓,並且/或者,該升降元件11呈管形。A CVD reactor or a method, characterized in that the lifting
一種CVD反應器或一種方法,其特徵在於:該固定區段21由封閉該殼體1之上開口24的蓋子2形成,並且該升降元件11可被提昇至一位置,在該位置上,該升降元件11之至少一個上部區段越過該開口24之邊緣24'向外伸出。A CVD reactor or a method, characterized in that the fixed
一種CVD反應器或一種方法,其特徵在於:該蓋板6藉由臨時固定構件及/或永久固定構件19、20而可被固定於或者被固定於該固定區段21,並且/或者,該蓋板6具有朝向氣體入口構件4或出氣板21的環繞式環形凸起14,該環形凸起以緊密接觸之方式貼靠該氣體入口構件4或該出氣板21,並且/或者,該蓋子2具有伸入該開口24之環形接片25,該環形接片包圍該氣體入口構件4。A CVD reactor or a method, characterized in that the
一種CVD反應器或一種方法,其特徵在於:該固定區段21為氣體入口構件4或者包圍氣體入口構件4,其中,該氣體入口構件4具有數個出氣開口17,該等出氣開口與該蓋板6與該氣體入口構件4之出氣面之間的間隙15連通,其中,該蓋板6具有通氣開口16。A CVD reactor or a method, characterized in that: the fixed
一種CVD反應器或一種方法,其特徵在於:該氣體出口構件3可自位於該基板座5或該蓋板6之運動路徑上的製程位置位移至下降位置。A CVD reactor or a method, characterized in that: the
一種CVD反應器或一種方法,其特徵在於:該固定區段21對應於封閉該殼體1之開口24的蓋子2,並且為了安裝該蓋板6,在提昇該蓋板6之前或之時將該蓋子2送入第一開啟位置,並且在該提昇之後,藉由第一固定構件19將由該升降元件11承載的該蓋板6固定於該蓋子2,並且接下來,在將該蓋子2提昇至第二開啟位置之後,而在此期間該蓋板6與該升降元件11分離,藉由第二固定構件20將該蓋板固定於該蓋子2,並且/或者,為了取出該蓋板6,先將該蓋子2送入第一開啟位置,在該第一開啟位置上將第一固定構件19固定於該蓋子2,並且在將該蓋子2提昇至第二開啟位置之後,鬆開第二固定構件20且接著將該蓋子2送回該第一開啟位置,在該第一開啟位置上,該蓋板6安置在該升降元件11上,其中,在此位置上移除該等第一固定構件19。A CVD reactor or a method, characterized in that the fixing
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一或數項。本發明亦有關於如下設計形式:前述說明中所述及之個別特徵不實現,特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。All disclosed features (either as a single feature or as a combination of features) are essential to the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related/attached priority files (copy of the earlier application), and the features described in these files are also included in the patent scope of this application. The subordinate items describe the features of the improvement scheme of the present invention with respect to the prior art with its features, and its purpose is mainly to file a divisional application on the basis of these claims. The invention given in each claim may further have one or more of the features given in the preceding description, in particular indicated by symbols and/or given in the description of symbols. The invention also relates to designs in which individual features mentioned in the preceding description are not implemented, in particular features which are not necessary for a specific application or which can be replaced by other technically equivalent components.
1:殼體 2:蓋子 3:氣體出口構件 4:氣體入口構件 5:基板座 6:蓋板 7:加熱裝置 8:桿 9:升降裝置,出口管 10:升降裝置 11:升降元件,保護管 12:載體板 13:載體 14:凸起 15:間隙 16:通氣開口 17:出氣開口,氣體分配室 18:裝載開口 19:保持室,固定構件 20:螺釘,固定構件,螺紋元件 21:出氣板,固定區段 22:內部空間 23:製程室 24:開口 24':開口之邊緣 25:環形接片 26:外緣區段1: Shell 2: cover 3: Gas outlet components 4: Gas inlet components 5: Substrate base 6: Cover 7: Heating device 8: Rod 9: Lifting device, outlet pipe 10: Lifting device 11: Lifting element, protection tube 12: Carrier board 13: Carrier 14: Raised 15: Gap 16: Ventilation opening 17: Outlet opening, gas distribution chamber 18: Loading openings 19: Holding chamber, fixed member 20: Screws, fixing members, threaded elements 21: Air outlet plate, fixed section 22: Interior Space 23: Process room 24: Opening 24': edge of opening 25: Ring Tab 26: Outer edge section
下面將參照所附圖式說明本發明之實施例。其中: 圖1為處於製程位置之CVD反應器的截面圖,在該製程位置上,製程室23向下由基板座5界定,向上由蓋板6界定,其中,製程室23被氣體出口構件3包圍, 圖1a為Ia部分之放大圖, 圖2為根據圖1之視圖,但氣體出口構件3已下降, 圖3為根據圖2之視圖,其中,透過裝載開口18取出基板座5, 圖4為根據圖3之視圖,其中,蓋子2被送入第一開啟位置,在該第一開啟位置上,蓋子位於殼體1之開口24之邊緣24'上方約20 mm至30 mm處,其中,放置臨時固定構件19,以將蓋板6暫時緊固於蓋子2上, 圖5為根據圖4之視圖,其中,蓋子2被送入第二開啟位置, 圖6為根據圖5之視圖,其中,鬆開用於將蓋板6固定於蓋子2之螺紋元件20,蓋板6僅藉由臨時固定構件19保持在蓋子2上, 圖7為根據圖6之視圖,其中,僅藉由臨時固定構件19保持在蓋子2上之蓋板6被送入第一開啟位置,其中,升降元件11之上緣支撐蓋板6, 圖8為根據圖7之視圖,其中,臨時固定構件19已被移除,使得蓋板6僅由升降元件11托住, 圖9為升降元件11下降至如下位置之後根據圖8之視圖,在該位置上,蓋板6已與蓋子2分離並且可由抓取臂透過裝載開口18取出, 圖10為根據圖9之視圖,其中,在清潔過的蓋板被送入內部空間22並且以實質上相反之順序被固定於蓋子2之前,內部空間22既不包含基板座,亦不包含蓋板6, 圖11為第二實施例如圖1a之視圖,在該第二實施例中,氣體出口構件3執行升降元件之功能。Embodiments of the present invention will be described below with reference to the accompanying drawings. in: 1 is a cross-sectional view of a CVD reactor in a process position in which a process chamber 23 is bounded downwardly by the substrate holder 5 and upwardly by a cover plate 6, wherein the process chamber 23 is surrounded by a gas outlet member 3, Figure 1a is an enlarged view of part Ia, Figure 2 is a view according to Figure 1, but with the gas outlet member 3 lowered, FIG. 3 is a view according to FIG. 2 , wherein the substrate holder 5 is removed through the loading opening 18 , Fig. 4 is a view according to Fig. 3, wherein the lid 2 is brought into the first open position, in which the lid is located approximately 20 mm to 30 mm above the edge 24' of the opening 24 of the housing 1, Among them, the temporary fixing member 19 is placed to temporarily fasten the cover plate 6 on the cover 2, Fig. 5 is a view according to Fig. 4, wherein the lid 2 is brought into the second open position, FIG. 6 is a view according to FIG. 5 , wherein the screw element 20 for fixing the cover plate 6 to the cover 2 is loosened, the cover plate 6 is only held on the cover 2 by means of the temporary fixing means 19 , FIG. 7 is a view according to FIG. 6 , wherein the cover plate 6 , which is held on the cover 2 only by the temporary fixing member 19 , is brought into the first open position, wherein the upper edge of the lifting element 11 supports the cover plate 6 , FIG. 8 is a view according to FIG. 7 , wherein the temporary fixing member 19 has been removed, so that the cover plate 6 is held only by the lifting element 11 , FIG. 9 is a view according to FIG. 8 after the lifting element 11 has been lowered to the position in which the cover plate 6 has been separated from the cover 2 and can be removed by the gripping arm through the loading opening 18 , FIG. 10 is a view according to FIG. 9 , wherein the inner space 22 contains neither the substrate seat nor the cover before the cleaned cover plate is fed into the inner space 22 and fixed to the cover 2 in a substantially reverse order board 6, Figure 11 is a view of a second embodiment such as Figure 1a, in which the gas outlet member 3 performs the function of a lifting element.
1:殼體 1: Shell
2:蓋子 2: cover
3:氣體出口構件 3: Gas outlet components
4:氣體入口構件 4: Gas inlet components
6:蓋板 6: Cover
7:加熱裝置 7: Heating device
8:桿 8: Rod
9:升降裝置,出口管 9: Lifting device, outlet pipe
10:升降裝置 10: Lifting device
11:升降元件,保護管 11: Lifting element, protection tube
12:載體板 12: Carrier board
13:載體 13: Carrier
18:裝載開口 18: Loading openings
21:出氣板,固定區段 21: Air outlet plate, fixed section
22:內部空間 22: Interior Space
24:開口 24: Opening
25:環形接片 25: Ring Tab
26:外緣區段 26: Outer edge section
Claims (10)
Applications Claiming Priority (2)
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DE102020103947.6 | 2020-02-14 | ||
DE102020103947.6A DE102020103947A1 (en) | 2020-02-14 | 2020-02-14 | CVD reactor and method of handling a process chamber ceiling plate |
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TW202202651A true TW202202651A (en) | 2022-01-16 |
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TW110105377A TW202202651A (en) | 2020-02-14 | 2021-02-17 | CVD reactor and method for handling a process chamber cover plate |
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KR (1) | KR20220141827A (en) |
CN (1) | CN115190918A (en) |
DE (1) | DE102020103947A1 (en) |
TW (1) | TW202202651A (en) |
WO (1) | WO2021160785A1 (en) |
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DE102022129723A1 (en) | 2022-11-10 | 2024-05-16 | Aixtron Se | CVD reactor with removable process chamber housing |
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JPS5319707A (en) | 1976-08-06 | 1978-02-23 | Fujitsu Ten Ltd | Double band automatic tuning receiver |
US5591269A (en) | 1993-06-24 | 1997-01-07 | Tokyo Electron Limited | Vacuum processing apparatus |
DE10064942A1 (en) * | 2000-12-23 | 2002-07-04 | Aixtron Ag | Process for the deposition of crystalline layers in particular |
DE102005056324A1 (en) | 2005-11-25 | 2007-06-06 | Aixtron Ag | CVD reactor with exchangeable process chamber ceiling |
DE102007027704A1 (en) | 2007-06-15 | 2008-12-18 | Aixtron Ag | Device for coating substrates arranged on a susceptor |
JP5721132B2 (en) | 2009-12-10 | 2015-05-20 | オルボテック エルティ ソラー,エルエルシー | Shower head assembly for vacuum processing apparatus and method for fastening shower head assembly for vacuum processing apparatus to vacuum processing chamber |
KR101501362B1 (en) * | 2012-08-09 | 2015-03-10 | 가부시키가이샤 스크린 홀딩스 | Substrate processing apparatus and substrate processing method |
DE102012110125A1 (en) | 2012-10-24 | 2014-04-24 | Aixtron Se | Device for treating substrates with a replaceable ceiling plate and method for replacing such a ceiling plate |
KR101613544B1 (en) | 2014-02-13 | 2016-04-19 | 주식회사 유진테크 | Substrate processing apparatus |
DE102015107315A1 (en) | 2014-07-02 | 2016-01-07 | Aixtron Se | Method and device for cleaning a gas inlet element |
WO2016135377A1 (en) | 2015-02-25 | 2016-09-01 | Beneq Oy | Apparatus for subjecting a surface of a substrate to successive surface reactions |
KR102354975B1 (en) | 2015-06-18 | 2022-01-25 | 삼성디스플레이 주식회사 | Plasma enhanced chemical vapor deposition device and display apparatus using the same |
KR102532607B1 (en) * | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
DE102017105379A1 (en) | 2017-03-14 | 2018-09-20 | Aixtron Se | Substrate holder arrangement with mask carrier |
DE102017126448A1 (en) | 2017-11-10 | 2019-05-16 | Aixtron Se | Apparatus and method for readjusting a gas inlet member in a reactor housing |
KR102516885B1 (en) | 2018-05-10 | 2023-03-30 | 삼성전자주식회사 | Deposition equipment and method of fabricating semiconductor device using the same |
DE102019117479A1 (en) | 2019-06-28 | 2020-12-31 | Aixtron Se | Flat component that can be used in a CVD reactor |
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2020
- 2020-02-14 DE DE102020103947.6A patent/DE102020103947A1/en active Pending
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2021
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- 2021-02-12 WO PCT/EP2021/053424 patent/WO2021160785A1/en active Application Filing
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DE102020103947A1 (en) | 2021-08-19 |
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