TW202200388A - Plasma corrosion-resistant component, reaction device and composite coating forming method solving the micro-particle pollution that the current coating gradually shows failure in the advanced manufacturing process - Google Patents

Plasma corrosion-resistant component, reaction device and composite coating forming method solving the micro-particle pollution that the current coating gradually shows failure in the advanced manufacturing process Download PDF

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TW202200388A
TW202200388A TW110110005A TW110110005A TW202200388A TW 202200388 A TW202200388 A TW 202200388A TW 110110005 A TW110110005 A TW 110110005A TW 110110005 A TW110110005 A TW 110110005A TW 202200388 A TW202200388 A TW 202200388A
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TWI802855B (en
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段蛟
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大陸商中微半導體設備(上海)股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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Abstract

The invention relates to the technical field of semiconductor processing, and specifically discloses a plasma corrosion-resistant component. A surface of a component body is provided with a composite coating, and the composite coating includes a magnetic coating and a plasma corrosion-resistant coating. The component and the reaction device provided in the present invention have a composite coating formed of a magnetic coating and a plasma corrosion-resistant coating on surfaces. By having a direction of movement of electrons and ions in the plasma cavity changed by means of a magnetic field of the magnetic coating, bombardment on the surface of the component in a normal direction can be reduced to prevent micro-particle pollution generated by the plasma corrosion-resistant coating, and by having the component protected by the plasma corrosion-resistant coating, micro-particle pollution issues that the current coating gradually shows failure in an advanced manufacturing process can be solved. Further, a method for preparing a component with the composite coating is also disclosed.

Description

耐電漿腐蝕零部件和反應裝置及複合塗層形成方法Plasma corrosion-resistant parts and reaction device and method for forming composite coating

本發明涉及半導體加工技術領域,尤其涉及一種耐電漿腐蝕的零部件和反應裝置,以及一種複合塗層的形成方法。The invention relates to the technical field of semiconductor processing, in particular to a plasma corrosion-resistant component and a reaction device, and a method for forming a composite coating.

這裡的陳述僅提供與本發明有關的背景技術,而並不必然地構成現有技術。The statements herein merely provide background related to the present invention and do not necessarily constitute prior art.

在半導體器件的製造過程中,電漿蝕刻是將晶圓加工成設計圖案的關鍵製程。In the fabrication of semiconductor devices, plasma etching is a key process for processing wafers into designed patterns.

在典型的電漿蝕刻製程中,製程氣體(如CF4 、O2 等)在射頻(Radio Frequency,RF)激勵作用下形成電漿。這些電漿在電場的作用下與晶圓表面發生物理轟擊作用及化學反應,從而將晶圓蝕刻出具有特定的結構,完成蝕刻製程。In a typical plasma etching process, process gases (such as CF 4 , O 2 , etc.) are excited by radio frequency (RF) to form plasma. These plasmas undergo physical bombardment and chemical reactions with the surface of the wafer under the action of the electric field, thereby etching the wafer with a specific structure and completing the etching process.

發明人發現現有技術中至少存在如下問題:The inventors found that at least the following problems exist in the prior art:

最新的5nm製程中電漿蝕刻製程步驟數占總比已提升至17%以上,功率提高到10kW以上。先進蝕刻製程製程的功率和步驟的大幅提升,要求電漿蝕刻腔室內的部件具有更高的耐電漿腐蝕性能,產生更少的微顆粒污染及金屬污染源,進一步保障蝕刻設備製程的穩定性和可重複性。目前普遍技術中含釔(Y2 O3 、YF3 等)塗層在先進製程(10nm以下)中逐漸表現出失效的微顆粒污染,不能滿足更高製程要求。In the latest 5nm process, the total number of plasma etching process steps has increased to more than 17%, and the power has increased to more than 10kW. The substantial increase in the power and steps of the advanced etching process requires the components in the plasma etching chamber to have higher plasma corrosion resistance, resulting in less particle pollution and metal pollution sources, further ensuring the stability and reliability of the etching equipment process. Repeatability. At present, yttrium-containing (Y 2 O 3 , YF 3 , etc.) coatings in common technologies gradually show ineffective micro-particle contamination in advanced manufacturing processes (below 10 nm), which cannot meet higher process requirements.

如何降低塗層因電漿腐蝕而形成的微顆粒污染的風險,對提升半導體蝕刻製程水準將具有重要意義。How to reduce the risk of micro-particle contamination of coatings due to plasma corrosion will be of great significance to improving the level of semiconductor etching processes.

本發明的第一個目的在於提供一種耐電漿腐蝕零部件,以降低真空腔體內的顆粒污染,提升工件壽命。The first object of the present invention is to provide a plasma corrosion-resistant component, so as to reduce particle pollution in the vacuum chamber and increase the life of the workpiece.

為了實現上述目的,本發明提供的技術方案為:In order to achieve the above object, the technical scheme provided by the invention is:

一種耐電漿腐蝕零部件,包括零部件本體,零部件本體表面具有複合塗層,複合塗層包括磁性塗層和耐電漿腐蝕塗層,磁性塗層設於零部件本體表面和耐電漿腐蝕塗層之間。A plasma corrosion-resistant component, comprising a component body, the surface of the component body is provided with a composite coating, the composite coating includes a magnetic coating and a plasma corrosion-resistant coating, and the magnetic coating is provided on the surface of the component body and the plasma corrosion-resistant coating between.

上述零部件表面的複合塗層具有磁性和防護的兩種功能,複合塗層產生的磁場能夠改變電漿反應腔室內電子、離子的運動方向,降低其對零件表面的轟擊作用,避免塗層產生微小顆粒,另一方面該複合塗層外層結構緻密,能夠起到很好的防護作用,避免零部件受到電漿的腐蝕。The composite coating on the surface of the above-mentioned parts has two functions of magnetism and protection. The magnetic field generated by the composite coating can change the movement direction of electrons and ions in the plasma reaction chamber, reduce their bombardment on the surface of the parts, and avoid the formation of the coating. Small particles, on the other hand, the outer layer of the composite coating has a dense structure, which can play a very good protective role and prevent the parts from being corroded by plasma.

進一步地,磁性塗層材料包括釤鈷磁體、釹鐵硼磁體、鐵氧體磁體、鐵鈷磁體,鋁鎳鈷磁體、鐵鉑合金磁體中的至少一種。選用的這些材料都可以附加磁性。Further, the magnetic coating material includes at least one of samarium cobalt magnets, neodymium iron boron magnets, ferrite magnets, iron cobalt magnets, alnico magnets, and iron platinum alloy magnets. These materials are selected to have additional magnetic properties.

進一步地,耐電漿腐蝕塗層材料包括稀土元素Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的至少一種。耐腐蝕塗層具有緻密特性,抗腐蝕性能好,不易脫落。Further, the plasma corrosion resistant coating material includes at least one of rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. The corrosion-resistant coating has dense characteristics, good corrosion resistance, and is not easy to fall off.

進一步地,耐電漿腐蝕塗層包括稀土元素Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu的氧化物,氟化物或氟氧化物中的至少一種。上述稀土元素的具體表現形式一般為氧化物,氟化物,氟氧化物,可以如具體電漿反應製程中F/O比例來選擇。Further, the plasma corrosion resistant coating includes oxides, fluorides or oxyfluorides of rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu at least one of them. The specific manifestations of the above-mentioned rare earth elements are generally oxides, fluorides, and oxyfluorides, which can be selected according to the F/O ratio in the specific plasma reaction process.

進一步地,磁性塗層的厚度小於等於100μm。磁性塗層的目的在於提供磁場,改變電漿反應腔室(主要是靠近腔室內壁表面)電子、離子的運動方向。Further, the thickness of the magnetic coating is less than or equal to 100 μm. The purpose of the magnetic coating is to provide a magnetic field to change the direction of movement of electrons and ions in the plasma reaction chamber (mainly near the inner wall surface of the chamber).

本發明第二個目的在於提供一種上述複合塗層的形成方法,包括以下步驟:The second object of the present invention is to provide a method for forming the above-mentioned composite coating, comprising the following steps:

將零部件本體置於處理腔內,在零部件本體表面塗覆第一塗層,該塗層為磁性塗層;Place the component body in the processing chamber, and coat the surface of the component body with a first coating, which is a magnetic coating;

在第一塗層表面塗覆第二塗層,該塗層為耐電漿腐蝕塗層;A second coating is applied on the surface of the first coating, and the coating is a plasma corrosion resistant coating;

為第一塗層附加磁性。Adds magnetism to the first coating.

進一步地,第一塗層的塗覆方法包括懸塗、噴塗、CVD、PVD、ALD、氣溶膠沉積法中的至少一種。Further, the coating method of the first coating layer includes at least one of suspension coating, spray coating, CVD, PVD, ALD, and aerosol deposition method.

進一步地,第二塗層的塗覆方法包括CVD、ALD、PVD中的至少一種。這幾種方法得到的第二塗層具有高緻密的特性,具有高緻密特性的塗層才能防電漿腐蝕的作用。Further, the coating method of the second coating layer includes at least one of CVD, ALD, and PVD. The second coating obtained by these several methods has the characteristics of high density, and the coating with high density characteristics can prevent the effect of plasma corrosion.

進一步地,第二塗層的緻密度大於等於99%,第二塗層的緻密度在這個範圍內,防護效果較好。Further, the density of the second coating is greater than or equal to 99%, the density of the second coating is within this range, and the protective effect is better.

進一步地,附加磁性的方法為透過在零部件本體背面設置N型或S型永磁體,或者透過脈衝磁場、直流磁場、交變磁場中的一種或多種組合的方式附加磁性。如永磁體的磁力分佈,一般強度高磁力線密集的端面進行磁化,因此在背面設置N型或S型永磁體對第一塗層附加磁性的效果較好。Further, the method of adding magnetism is to add magnetism by arranging N-type or S-type permanent magnets on the back of the component body, or by one or more combinations of pulsed magnetic field, DC magnetic field, and alternating magnetic field. For example, in the magnetic force distribution of permanent magnets, the end faces with dense magnetic lines of force with high strength are generally magnetized. Therefore, setting N-type or S-type permanent magnets on the back has a better effect of adding magnetism to the first coating.

進一步地,附加磁性的磁場方向透過改變N型或S型永磁體在零部件本體背面的設置位置來改變。Further, the direction of the magnetic field of the additional magnetism can be changed by changing the arrangement position of the N-type or S-type permanent magnets on the backside of the component body.

進一步地,附加磁性的磁場方向與零部件本體表面呈一夾角。Further, the direction of the magnetic field of the additional magnetism forms an included angle with the surface of the component body.

進一步地,夾角為範圍為0~90°。Further, the included angle ranges from 0° to 90°.

透過調整N型或S型永磁體在零部件本體背面的設置位置來改變附加磁性的磁場方向,使磁場方向和零部件本體表面呈一定的夾角,夾角範圍為0~90°,在該範圍內,能夠改變大多數電漿反應腔室內到達內壁表面的電子、離子等的運動方向,削弱電子、離子對塗層表面的轟擊作用,降低腐蝕作用。By adjusting the setting position of the N-type or S-type permanent magnet on the back of the part body, the direction of the magnetic field of the additional magnetic field is changed, so that the magnetic field direction and the surface of the part body form a certain angle, the angle range is 0~90°, within this range It can change the movement direction of electrons and ions that reach the inner wall surface in most plasma reaction chambers, weaken the bombardment effect of electrons and ions on the coating surface, and reduce the corrosion effect.

上述方法獲得的零部件,表面具有複合塗層,該複合塗層具有磁性和防護兩種特性,在電漿的轟擊下不易脫落,減小反應腔內微小顆粒的污染。The parts obtained by the above method have a composite coating on the surface, and the composite coating has two properties of magnetism and protection, and is not easy to fall off under the bombardment of plasma, thereby reducing the pollution of tiny particles in the reaction chamber.

本發明第三個目的在於提供一種電漿反應裝置,包括一真空反應腔和上述的耐電漿腐蝕零部件。The third object of the present invention is to provide a plasma reaction device, which includes a vacuum reaction chamber and the above-mentioned plasma corrosion-resistant parts.

進一步地,真空反應腔的內部腔壁表面具有複合塗層。反應腔內部腔壁表面暴露於電漿環境中,其表面塗覆上述方法獲得的塗層,有利於增強對反應腔的防護,提高真空反應腔的服役壽命。Further, the inner cavity wall surface of the vacuum reaction chamber has a composite coating. The surface of the inner chamber wall of the reaction chamber is exposed to the plasma environment, and the coating obtained by the above method is coated on the surface, which is beneficial to enhance the protection of the reaction chamber and improve the service life of the vacuum reaction chamber.

進一步地,電漿反應裝置為電感耦合電漿處理裝置,耐電漿腐蝕零部件包括內襯套、覆蓋環、聚焦環、絕緣環、電漿約束環中的一種或多種。這些零部件暴露在電漿環境中工作,表面塗覆上述複合塗層進行防護,得到的塗層不易脫落,減小了內部腔體環境污染的風險,增加了零部件的服役壽命。Further, the plasma reaction device is an inductively coupled plasma processing device, and the plasma corrosion-resistant components include one or more of an inner liner, a cover ring, a focus ring, an insulating ring, and a plasma confinement ring. These parts are exposed to the plasma environment to work, and the surface is coated with the above-mentioned composite coating for protection, and the obtained coating is not easy to fall off, which reduces the risk of environmental pollution in the internal cavity and increases the service life of the parts.

進一步地,電漿反應裝置為電容耦合電漿處理裝置,耐電漿腐蝕零部件包括氣體噴淋頭、上接地環、下接地環、移動環、覆蓋環、聚焦環、絕緣環、電漿約束環中的一種或多種。這些零部件暴露在電漿環境中工作,表面塗覆上述複合塗層進行防護,得到的塗層不易脫落,減小了內部腔體環境污染的風險,增加了零部件的服役壽命。Further, the plasma reaction device is a capacitively coupled plasma processing device, and the plasma corrosion resistant parts include a gas shower head, an upper grounding ring, a lower grounding ring, a moving ring, a covering ring, a focusing ring, an insulating ring, and a plasma confinement ring. one or more of. These parts are exposed to the plasma environment to work, and the surface is coated with the above-mentioned composite coating for protection, and the obtained coating is not easy to fall off, which reduces the risk of environmental pollution in the internal cavity and increases the service life of the parts.

上述電漿反應裝置的反應腔內部腔壁表面和耐電漿腐蝕零部件的表面的複合塗層具有磁性和防護兩種功能,在電漿的轟擊下不易脫落,減小反應腔內微小顆粒的污染。The composite coating on the surface of the inner cavity wall of the reaction chamber of the above-mentioned plasma reaction device and the surface of the parts resistant to plasma corrosion has two functions of magnetism and protection. .

本發明的有益效果:Beneficial effects of the present invention:

本發明提供的耐電漿腐蝕零部件和反應裝置的真空腔體,其表面具有磁性塗層和耐電漿腐蝕塗層形成的複合塗層,透過磁性塗層的磁場改變電漿腔體內的電子、離子的運動方向,令其呈螺旋線運動,使得運動時間增加,電子、離子的碰撞複合概率增加,從而使得對零部件本體轟擊的電漿數目減少,另一方面,隨著電子、離子逐漸接近零部件本體,磁場強度逐漸增大,電子、離子的螺旋線運動半徑更小,其運動速度方向更加偏離法向,由此對零部件本體的正面轟擊作用大大降低。本發明提供的塗層大大降低了零部件表面和真空腔體表面所受到的電子、離子沿法向的正面轟擊作用,因而可以降低耐電漿腐蝕塗層發生腐蝕的概率,降低真空腔體產生微小顆粒的來源,進而減少微小顆粒的污染,提高電漿真空腔體應用製程水準。The plasma corrosion-resistant parts and the vacuum chamber of the reaction device provided by the present invention have a composite coating formed by a magnetic coating and a plasma-corrosion-resistant coating on the surface, and the magnetic field of the magnetic coating changes the electrons and ions in the plasma chamber. The direction of movement of the component makes it move in a spiral line, so that the movement time increases, and the collision and recombination probability of electrons and ions increases, thereby reducing the number of plasma bombarding the component body. On the other hand, as electrons and ions gradually approach zero In the component body, the magnetic field strength gradually increases, the radius of the helix movement of electrons and ions is smaller, and the direction of the movement speed is more deviated from the normal direction, thus the frontal bombardment effect on the component body is greatly reduced. The coating provided by the invention greatly reduces the positive bombardment of electrons and ions along the normal direction on the surface of the parts and the surface of the vacuum cavity, thereby reducing the probability of corrosion of the plasma corrosion-resistant coating and reducing the generation of tiny particles in the vacuum cavity. The source of particles, thereby reducing the pollution of tiny particles, and improving the level of the application process of the plasma vacuum chamber.

本發明提供了一種複合塗層形成方法。方法能夠在電漿蝕刻零部件表面和反應裝置的真空腔體表面形成一種複合耐腐蝕塗層,這種塗層具有磁性,其產生的磁場能夠改變電子、離子的運動方向,減少對零部件本體轟擊的電漿數目和法向轟擊強度,從而降低塗層受到的電漿腐蝕,進而減少微小顆粒的污染,滿足更高製程蝕刻要求。The present invention provides a method for forming a composite coating. The method can form a composite corrosion-resistant coating on the surface of the plasma etching parts and the surface of the vacuum chamber of the reaction device. This coating is magnetic, and the magnetic field generated by the coating can change the moving direction of electrons and ions, reducing the impact on the parts body. The number of bombarded plasma and the normal bombardment intensity can reduce the plasma corrosion of the coating, thereby reducing the pollution of tiny particles, and meet the higher process etching requirements.

電漿反應裝置包括真空反應腔,反應腔內為電漿環境,零部件暴露在電漿環境中,由於電漿具有較強的腐蝕性,因此,需要在零部件本體表面塗覆耐腐蝕塗層,以阻擋電漿對零部件本體的腐蝕,保護反應腔內的零部件。一般而言,含釔(Y2 O3 、YF3 等)塗層在先進製程(10nm以下)中逐漸表現出失效的微顆粒污染,不能更好滿足製程需求。這是因為,為了滿足不斷縮小的線寬要求,電漿蝕刻製程製程中採用的功率和步驟大幅提升,如圖1所示,含釔塗層受到的電漿的物理轟擊和化學腐蝕強度大幅增強,作用時間大幅延長,使得含釔塗層本體開始發生腐蝕,在腔體側部等產生微小顆粒,散落在腔體側壁、頂部甚至基板上,形成污染。在這些微小顆粒的形成過程中,塗層主要受到電子、離子從各個方向的轟擊作用,包括偏離基板法向和平行於基板法向方向。改善來自這些偏離法向方向的電子或離子704轟擊作用,可以降低零部件表面塗層發生腐蝕的概率,降低蝕刻腔體產生微小顆粒705的來源,進而減少微小顆粒705的污染。圖中701指的是電漿,702指的是基座,703指晶圓。The plasma reaction device includes a vacuum reaction chamber. The reaction chamber is a plasma environment. The parts are exposed to the plasma environment. Since the plasma is highly corrosive, it is necessary to coat the surface of the parts body with a corrosion-resistant coating. , in order to prevent the corrosion of the parts body by the plasma and protect the parts in the reaction chamber. Generally speaking, yttrium-containing (Y 2 O 3 , YF 3 , etc.) coatings gradually show ineffective micro-particle contamination in advanced manufacturing processes (below 10 nm), which cannot better meet process requirements. This is because, in order to meet the ever-shrinking line width requirements, the power and steps used in the plasma etching process have been greatly increased. As shown in Figure 1, the physical bombardment and chemical corrosion strength of the yttrium-containing coating by the plasma is greatly enhanced. , the action time is greatly prolonged, so that the yttrium-containing coating body begins to corrode, and tiny particles are generated on the side of the cavity, scattered on the side wall, top and even the substrate of the cavity, causing pollution. During the formation of these tiny particles, the coating is mainly bombarded by electrons and ions from all directions, including deviating from the substrate normal and parallel to the substrate normal. Improving the bombardment of electrons or ions 704 from these deviated normal directions can reduce the probability of corrosion of the surface coating of parts, reduce the source of tiny particles 705 generated in the etching cavity, and further reduce the pollution of the tiny particles 705 . In the figure, 701 refers to the plasma, 702 refers to the susceptor, and 703 refers to the wafer.

為了解決上述技術問題,本發明提出了一種能夠改善電漿腔體內偏離法向方向的電子、離子轟擊現象的零部件和反應裝置,以及在零部件表面和反應裝置腔體內壁表面塗覆一種複合塗層的方法。In order to solve the above technical problems, the present invention proposes a component and a reaction device that can improve the electron and ion bombardment phenomena deviating from the normal direction in the plasma cavity, and a composite material is coated on the surface of the component and the inner wall surface of the cavity of the reaction device. method of coating.

下面將結合本發明實施例中的附圖,對本發明實施例中的技術方案進行清楚、完整地描述,顯然,所描述的實施例僅僅是本發明的一部分實施例,而不是全部的實施例。基於本發明中的實施例,本領域之具備通常知識者在沒有作出創造性勞動前提下所獲得的所有其他實施例,都屬於本發明保護的範圍。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those with ordinary knowledge in the art without creative work shall fall within the protection scope of the present invention.

需要說明,本發明實施例中所有方向性指示(諸如上、下、左、右、前、後……)僅用於解釋在某一特定姿態(如附圖所示)下各部件之間的相對位置關係、運動情況等,如果該特定姿態發生改變時,則該方向性指示也相應地隨之改變。It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relationship between various components under a certain posture (as shown in the accompanying drawings). The relative positional relationship, the movement situation, etc., if the specific posture changes, the directional indication also changes accordingly.

還需要說明的是,當元件被稱為「固定於」或「設置於」另一個元件上時,它可以直接在另一個元件上或者可能同時存在居中元件。當一個元件被稱為是「連接」另一個元件,它可以是直接連接另一個元件或者可能同時存在居中元件。It should also be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.

另外,在本發明中涉及「第一」「第二」等的描述僅用於描述目的,而不能理解為指示或暗示其相對重要性或者隱含指明所指示的技術特徵的數量。由此,限定有「第一」「第二」的特徵可以明示或者隱含地包括至少一個該特徵。另外,各個實施例之間的技術方案可以相互結合,但是必須是以本領域之具備通常知識者能夠實現為基礎,當技術方案的結合出現相互矛盾或無法實現時應當認為這種技術方案的結合不存在,也不在本發明要求的保護範圍之內。In addition, the descriptions involving "first", "second", etc. in the present invention are only for descriptive purposes, and should not be construed as indicating or implying their relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as "first" and "second" may expressly or implicitly include at least one of that feature. In addition, the technical solutions between the various embodiments can be combined with each other, but must be based on the realization by those with ordinary knowledge in the field. When the combination of technical solutions is contradictory or cannot be realized, it should be considered that the combination of technical solutions does not exist and is not within the scope of protection claimed by the present invention.

圖2為本發明在電漿蝕刻零部件表面或者反應裝置的真空腔體表面塗覆複合塗層的方法流程圖。FIG. 2 is a flow chart of a method for coating a composite coating on the surface of a plasma-etched component or a surface of a vacuum chamber of a reaction device according to the present invention.

請參考圖2,該方法在製備塗層裝置的處理腔內進行,具體包括以下步驟:Please refer to FIG. 2, the method is carried out in the processing chamber of the coating device, and specifically includes the following steps:

將基板100置於處理腔內Placing the substrate 100 in the processing chamber

基板100為電漿蝕刻零部件本體或者為反應裝置的真空腔體壁,電漿蝕刻零部件或者反應裝置的真空腔體壁在工作時暴露於電漿環境中,需要塗覆耐腐蝕塗層進行防護;The substrate 100 is the body of the plasma etched component or the vacuum chamber wall of the reaction device. The plasma etched component or the vacuum chamber wall of the reaction device is exposed to the plasma environment during operation and needs to be coated with a corrosion-resistant coating. protection;

在基板100表面塗覆第一塗層102;Coating the first coating layer 102 on the surface of the substrate 100;

塗覆的第一塗層102為磁性塗層,塗覆方法為氣體鍍膜方法,包括懸塗、噴塗、PVD、CVD、ALD、氣溶膠沉積法等方法,The coated first coating 102 is a magnetic coating, and the coating method is a gas coating method, including suspension coating, spray coating, PVD, CVD, ALD, aerosol deposition method and other methods,

具體地,以PVD方法為例,如圖3所示為本實施例的塗覆方法示意圖,第一塗層102塗覆在處理腔200內進行,處理腔200內設有第一靶材301,第一靶材301經過激發形成分子流,經過增強源400的作用在基板100表面形成緻密的第一塗層102,其中激發方式可以為電漿、離子束、電子束、鐳射或熱方式中的一種或多種方式組合,Specifically, taking the PVD method as an example, as shown in FIG. 3 , a schematic diagram of the coating method of this embodiment is shown. The first coating layer 102 is coated in the processing chamber 200 , and the processing chamber 200 is provided with a first target material 301 . The first target 301 is excited to form a molecular flow, and a dense first coating 102 is formed on the surface of the substrate 100 through the action of the enhancement source 400, wherein the excitation method can be plasma, ion beam, electron beam, laser or thermal method. one or more combinations,

在實際情況中,由於第一塗層102的目的在於提供磁場,不需要高的緻密度,因此選用其他普通塗覆方式也合適,以上所用PVD方法塗覆僅為具體說明一種塗覆方法,不作為較佳方案;In practical situations, since the purpose of the first coating 102 is to provide a magnetic field and does not require high density, other common coating methods are also suitable. better solution;

在第一塗層102表面塗覆第二塗層103;Coating the second coating 103 on the surface of the first coating 102;

塗覆的第二塗層103為耐電漿耐腐蝕塗層,塗覆方法包括CVD、ALD、PVD等方法,較佳地,第二塗層103緻密性越高,耐腐蝕性效果越好。The coated second coating 103 is a plasma-resistant corrosion-resistant coating, and the coating method includes CVD, ALD, PVD and other methods. Preferably, the higher the density of the second coating 103, the better the corrosion resistance effect.

具體地,以PVD方法為例,如圖4所示為本實施例的塗覆方法示意圖,第二塗層103塗覆在處理腔200內進行,該步驟中的處理腔可以為製備第一塗層102的同一處理腔,也可以是不同處理腔,處理腔200內設有第二靶材302,第二靶材302經過激發形成分子流,經過增強源400的作用在第一塗層102的表面形成緻密的第二塗層103,第一塗層102和第二塗層103形成複合塗層101,激發方式包括電漿、離子束、電子束、鐳射或熱方式等中的至少一種。Specifically, taking the PVD method as an example, as shown in FIG. 4 , the schematic diagram of the coating method of this embodiment is shown. The second coating layer 103 is coated in the processing chamber 200 , and the processing chamber in this step can be used for preparing the first coating layer. The same processing chamber of the layer 102 can also be a different processing chamber. The processing chamber 200 is provided with a second target 302. The second target 302 is excited to form a molecular flow, and the enhancement source 400 acts on the first coating 102. A dense second coating 103 is formed on the surface, and the first coating 102 and the second coating 103 form a composite coating 101. The excitation method includes at least one of plasma, ion beam, electron beam, laser or thermal method.

為第一塗層102附加磁性;adding magnetism to the first coating 102;

附加磁性的方式包括透過永磁體、脈衝磁場、直流磁場、交變磁場等至少一種方式附加磁性,The way of adding magnetism includes adding magnetism through at least one way of permanent magnet, pulsed magnetic field, direct current magnetic field, alternating magnetic field, etc.

具體地,如圖5所示為本實施例的附加磁性方法示意圖,透過在基板100背面設置N型或S型永磁體500為第一塗層102附加磁性,在背面設置N型或S型永磁體500對第一塗層102附加磁性如圖6所示,磁場方向和基板100之間呈一定夾角105,夾角範圍選用0~90°,在該範圍內,產生磁場效果能夠改變到達電漿反應腔室內壁表面絕大多數的電子、離子的運動方向。N型或S型永磁體500為釤鈷磁體、釹鐵硼磁體、鐵氧體磁體、鐵鈷磁體、鋁鎳鈷磁體和鐵鉑合金磁體等中的至少一種。Specifically, as shown in FIG. 5 , a schematic diagram of the method for adding magnetism in this embodiment is provided. The N-type or S-type permanent magnets 500 are arranged on the back of the substrate 100 to add magnetism to the first coating 102 , and N-type or S-type permanent magnets are arranged on the back of the substrate 100 The magnet 500 adds magnetism to the first coating 102 as shown in FIG. 6 , a certain angle 105 is formed between the direction of the magnetic field and the substrate 100 , and the included angle is selected in the range of 0 to 90°. Within this range, the magnetic field effect can be changed to reach the plasma reaction. The movement direction of most electrons and ions on the inner wall surface of the chamber. The N-type or S-type permanent magnet 500 is at least one of a samarium cobalt magnet, a neodymium iron boron magnet, a ferrite magnet, an iron cobalt magnet, an alnico magnet, an iron platinum alloy magnet, and the like.

至此,獲得一種具有磁性和耐腐蝕特性的複合塗層101。其中第一塗層102的作用為提供磁場,改變到達電漿反應腔內壁表面的電子、離子的轟擊方向並發生偏轉,降低第二塗層103受到的法向轟擊作用;第二塗層103的作用為耐電漿轟擊,保護第一塗層102和基板100不受電漿腐蝕。So far, a composite coating 101 with magnetic properties and corrosion resistance is obtained. The function of the first coating 102 is to provide a magnetic field, change the bombardment direction and deflect the electrons and ions reaching the inner wall surface of the plasma reaction chamber, and reduce the normal bombardment of the second coating 103; the second coating 103 Its function is to resist plasma bombardment and protect the first coating 102 and the substrate 100 from plasma corrosion.

需要說明的是,上述方法中為第一塗層102附加磁性的步驟14不限定於在塗覆第二塗層103之後,其步驟也可以在塗覆第一塗層102之後,塗覆第二塗層103之前。It should be noted that the step 14 of adding magnetism to the first coating 102 in the above method is not limited to after the second coating 103 is applied, and the step 14 may also be after the first coating 102 is applied, and the second coating 102 is applied. Before coating 103.

圖6為本發明基板100的橫截面示意圖。FIG. 6 is a schematic cross-sectional view of the substrate 100 of the present invention.

請參考圖6,圖中基板100為耐電漿腐蝕零部件或者為電漿反應裝置的真空反應腔內部腔壁,在基板100表面具有複合塗層101,該複合塗層101包含的兩種塗層,分別為第一塗層102(磁性塗層)和第二塗層103(耐電漿腐蝕塗層),並且第一塗層102(磁性塗層)設置於基板100和第二塗層103(耐電漿腐蝕塗層)之間,第一塗層102(磁性塗層)覆蓋基板100表面,第二塗層103(耐電漿腐蝕塗層)覆蓋第一塗層102(磁性塗層)表面。Please refer to FIG. 6 , the substrate 100 in the figure is a plasma corrosion-resistant component or the inner cavity wall of a vacuum reaction chamber of a plasma reaction device, and a composite coating 101 is provided on the surface of the substrate 100 , and the composite coating 101 includes two kinds of coatings , respectively the first coating 102 (magnetic coating) and the second coating 103 (plasma corrosion-resistant coating), and the first coating 102 (magnetic coating) is provided on the substrate 100 and the second coating 103 (electrical-resistant coating) Between the plasma corrosion coatings), the first coating 102 (magnetic coating) covers the surface of the substrate 100, and the second coating 103 (plasma corrosion resistant coating) covers the surface of the first coating 102 (magnetic coating).

第一塗層102(磁性塗層)以及上述方法中的第一靶材301選用能夠附加磁性的材質,例如釤鈷磁體、釹鐵硼磁體、鐵氧體磁體、鐵鈷磁體,鋁鎳鈷磁體、鐵鉑合金磁體等材料中的至少一種。選用這種材質的目的在於能夠附加磁性並且附加磁性後能夠產生磁場。第一塗層102(磁性塗層)的厚度不大於100μm,第一塗層102(磁性塗層)的目的在於提供磁場,其緻密度30%以上即可。The first coating 102 (magnetic coating) and the first target 301 in the above method are selected from materials that can add magnetic properties, such as samarium cobalt magnets, neodymium iron boron magnets, ferrite magnets, iron cobalt magnets, and AlNiCo magnets. , at least one of iron-platinum alloy magnets and other materials. The purpose of choosing this material is to be able to add magnetism and to generate a magnetic field after adding magnetism. The thickness of the first coating 102 (magnetic coating) is not greater than 100 μm, the purpose of the first coating 102 (magnetic coating) is to provide a magnetic field, and the density of the first coating 102 (magnetic coating) may be more than 30%.

第二塗層103(耐電漿腐蝕塗層)以及上述方法中的第二靶材302的材質包含稀土元素Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu,第二塗層103(耐電漿腐蝕塗層)材質可以是包含上述元素的一種化合物,也可以是不同的化合物的組合,例如選用上述稀土元素的氧化物、氟化物、氟氧化物中的一種或多種。第二塗層103(耐電漿腐蝕塗層)要承受電漿的轟擊,儘量少的產生微小顆粒污染物,因此其緻密度較佳99%以上。The materials of the second coating 103 (plasma corrosion resistant coating) and the second target 302 in the above method include rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er , Tm, Yb, Lu, the material of the second coating 103 (plasma corrosion resistant coating) can be a compound containing the above elements, or a combination of different compounds, such as oxides, fluorides, One or more of oxyfluorides. The second coating 103 (plasma corrosion-resistant coating) needs to withstand the bombardment of the plasma and generate as few micro-particle pollutants as possible, so its density is preferably above 99%.

在電漿反應裝置的真空腔體中,腔體內壁和零部件表面塗覆有第一塗層102(磁性塗層)和第二塗層103(耐電漿腐蝕塗層),其中第一塗層102(磁性塗層)的磁場強度方向與基板100表面存在夾角105。請參考圖7,在受到來自電子或離子704偏離法向方向的作用時,由於受到磁場的勞倫茲力,這些電子或離子704將會偏離直線運動,變為具有半徑為r=mv*sinθ/eB(其中m為電子、離子品質,B為磁感應強度,θ為速度v與B之間的夾角)的螺旋線運動方式。一方面,電子或離子704的螺旋線運動方式,使得運動時間增加,電子、離子的碰撞複合概率增加,使得能對塗覆了複合塗層的零部件轟擊的數目減少;另一方面,隨著電子或離子704逐漸接近塗覆了複合塗層的零部件,B逐漸增大,電子、離子的螺旋線運動半徑更小,速度方向更加偏離法向方向,由此對基板100的法向轟擊作用大大降低。這樣就大大降低了塗覆了複合塗層的零部件受到的電子或離子704法向轟擊作用,降低基板100表面第二塗層103(耐電漿腐蝕塗層)發生腐蝕的概率,進一步降低真空腔體產生微小顆粒705的來源,進而減少微小顆粒705的污染。In the vacuum chamber of the plasma reaction device, the inner wall of the chamber and the surfaces of parts are coated with a first coating 102 (magnetic coating) and a second coating 103 (plasma corrosion resistant coating), wherein the first coating An angle 105 exists between the direction of the magnetic field strength of 102 (magnetic coating) and the surface of the substrate 100 . Please refer to FIG. 7 , when the electrons or ions 704 deviate from the normal direction, due to the Lorentz force of the magnetic field, these electrons or ions 704 will move away from the straight line and become with a radius of r=mv*sinθ /eB (where m is the quality of electrons and ions, B is the magnetic induction intensity, and θ is the angle between the velocity v and B). On the one hand, the helical movement of electrons or ions 704 increases the movement time and increases the probability of collision and recombination of electrons and ions, which reduces the number of parts that can be bombarded with composite coatings; The electrons or ions 704 gradually approach the parts coated with the composite coating, B gradually increases, the radius of the helical motion of the electrons and ions is smaller, and the speed direction is further deviated from the normal direction, thus the normal bombardment effect on the substrate 100 Greatly reduced. In this way, the normal bombardment of electrons or ions 704 on the parts coated with the composite coating is greatly reduced, the probability of corrosion of the second coating 103 (plasma corrosion-resistant coating) on the surface of the substrate 100 is reduced, and the vacuum chamber is further reduced. The source of the microparticles 705 produced by the body, thereby reducing the contamination of the microparticles 705.

電漿反應裝置具體包括電感耦合電漿處理裝置或電容耦合電漿處理裝置。如圖8所示,當電漿反應裝置為電感耦合電漿處理裝置時,其包含的耐電漿腐蝕零部件有內襯套、覆蓋環、聚焦環、絕緣環、電漿約束環等零部件。如圖9所示,當電漿反應裝置為電容耦合電漿處理裝置時,其包含的耐電漿腐蝕零部件有氣體噴淋頭、上接地環、下接地環、移動環、覆蓋環、聚焦環、絕緣環、電漿約束環等零部件。The plasma reaction device specifically includes an inductively coupled plasma processing device or a capacitively coupled plasma processing device. As shown in FIG. 8 , when the plasma reaction device is an inductively coupled plasma processing device, the plasma corrosion-resistant components included in it include an inner liner, a cover ring, a focus ring, an insulating ring, and a plasma confinement ring. As shown in FIG. 9 , when the plasma reaction device is a capacitively coupled plasma processing device, the plasma corrosion-resistant components included in it include a gas shower head, an upper grounding ring, a lower grounding ring, a moving ring, a covering ring, and a focusing ring. , insulating ring, plasma confinement ring and other components.

電漿反應裝置真空腔體內部腔壁以及內部的電漿蝕刻零部件暴露於電漿環境中,表面需要塗覆上述複合塗層101以防止電漿的腐蝕。The inner cavity wall of the vacuum chamber of the plasma reaction device and the inner plasma etching components are exposed to the plasma environment, and the surface needs to be coated with the above-mentioned composite coating 101 to prevent the corrosion of the plasma.

圖8是本發明一種電漿反應裝置的結構示意圖。FIG. 8 is a schematic structural diagram of a plasma reaction device of the present invention.

電漿反應裝置包括:反應腔609,反應腔609內為電漿環境;零部件和反應腔內部腔壁暴露於電漿環境中。The plasma reaction device includes: a reaction chamber 609, and the reaction chamber 609 is a plasma environment; the components and the inner cavity wall of the reaction chamber are exposed to the plasma environment.

電漿反應裝置還包括:基座610,基座610用於承載待處理基片W,電漿用於對待處理基片W進行處理。由於電漿具有較強的腐蝕性,為了防止零部件的表面和反應腔609內部腔壁被電漿腐蝕,因此需要在零部件的表面和反應腔609內部腔壁塗覆複合塗層101。The plasma reaction apparatus further includes: a base 610, the base 610 is used to carry the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since the plasma is highly corrosive, in order to prevent the surface of the component and the inner cavity wall of the reaction chamber 609 from being corroded by the plasma, the composite coating 101 needs to be coated on the surface of the component and the inner cavity wall of the reaction cavity 609 .

具體地,圖8所示的電漿反應裝置為電感耦合電漿處理裝置,相應的,暴露於電漿環境中的零部件包括:襯套601、氣體噴嘴602、靜電卡盤603、聚焦環604、絕緣環605、覆蓋環606、電漿約束環607、反應腔頂壁608或氣體連接法蘭(圖未示出)。Specifically, the plasma reaction device shown in FIG. 8 is an inductively coupled plasma processing device. Correspondingly, the components exposed to the plasma environment include: a bushing 601 , a gas nozzle 602 , an electrostatic chuck 603 , and a focus ring 604 , an insulating ring 605, a cover ring 606, a plasma confinement ring 607, a reaction chamber top wall 608 or a gas connection flange (not shown).

綜上,上述方法獲得的耐電漿腐蝕零部件和反應裝置表面覆有複合塗層,複合塗層具有磁性和耐腐蝕兩種特性,能夠使得基板100所受電子、離子的轟擊偏離法向為螺旋線運動方式,降低塗層所受法向轟擊強度,降低因塗層失效而引起的微顆粒污染,滿足更高製程蝕刻要求。To sum up, the surfaces of the plasma corrosion-resistant parts and the reaction device obtained by the above method are covered with a composite coating, and the composite coating has two properties of magnetic properties and corrosion resistance, which can make the bombardment of electrons and ions on the substrate 100 deviate from the normal direction as a spiral. The linear motion mode reduces the normal bombardment intensity of the coating, reduces the pollution of micro-particles caused by the failure of the coating, and meets the higher process etching requirements.

以上僅為本發明的較佳實施例,並非因此限制本發明的專利範圍,凡是在本發明的發明構思下,利用本發明說明書及附圖內容所作的等效結構變換,或直接/間接運用在其他相關的技術領域均包括在本發明的專利保護範圍內。The above are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Under the inventive concept of the present invention, the equivalent structure transformation made by the contents of the description and the accompanying drawings of the present invention, or directly/indirectly applied to Other related technical fields are included within the scope of patent protection of the present invention.

100:基板 101:複合塗層 102:第一塗層 103:第二塗層 200:處理腔 301:第一靶材 302:第二靶材 400:增強源 500:N型或S型永磁體 601:襯套 602:氣體噴嘴 603:靜電卡盤 604:聚焦環 605:絕緣環 606:覆蓋環 607:電漿約束環 608:反應腔頂壁 609:反應腔 610:基座 611:氣體供應裝置 612:氣體噴淋頭; 701:電漿 702:基座 703:晶圓 704:電子或離子 705:微小顆粒 W:基片100: Substrate 101: Composite coating 102: First coat 103: Second coat 200: Processing chamber 301: The first target 302: Second target 400: Enhanced Source 500: N-type or S-type permanent magnet 601: Bushing 602: Gas Nozzle 603: Electrostatic chuck 604: Focus Ring 605: Insulation ring 606: Cover Ring 607: Plasma Confinement Ring 608: Reaction chamber top wall 609: Reaction chamber 610: Pedestal 611: Gas supply device 612: gas shower head; 701: Plasma 702: Pedestal 703: Wafer 704: Electron or Ion 705: Tiny particles W: substrate

為了更清楚地說明本發明實施例或現有技術中的技術方案,下面將對實施例或現有技術描述中所需要使用的附圖作簡單地介紹。顯而易見地,下面描述中的附圖僅僅是本發明的一些實施例,對於本領域之具備通常知識者來講,在不付出創造性勞動的前提下,還可以如這些附圖示出的結構獲得其他的附圖。In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that are required in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those with ordinary knowledge in the art, without creative efforts, other structures such as the structures shown in these drawings can also be obtained. 's attached drawing.

圖1是一種普通塗層受電漿轟擊產生微顆粒污染示意圖; 圖2是本發明的複合塗層製備流程示意圖; 圖3是本發明的磁性塗層塗覆示意圖; 圖4是本發明的耐電漿腐蝕塗層塗覆示意圖; 圖5是本發明的磁性塗層附加磁性的示意圖; 圖6是本發明的耐電漿腐蝕零部件橫截面示意圖; 圖7是本發明的複合塗層改善電漿轟擊示意圖; 圖8是本發明一種電漿反應裝置的結構示意圖; 圖9是本發明另一種電漿反應裝置的結構示意圖。Fig. 1 is a schematic diagram of micro-particle pollution caused by plasma bombardment of a common coating; Fig. 2 is the composite coating preparation flow schematic diagram of the present invention; Fig. 3 is the magnetic coating coating schematic diagram of the present invention; Fig. 4 is the coating schematic diagram of the anti-plasma corrosion coating of the present invention; 5 is a schematic diagram of the additional magnetic properties of the magnetic coating of the present invention; 6 is a schematic cross-sectional view of a plasma corrosion-resistant component of the present invention; Fig. 7 is the composite coating of the present invention to improve the schematic diagram of plasma bombardment; 8 is a schematic structural diagram of a plasma reaction device of the present invention; FIG. 9 is a schematic structural diagram of another plasma reaction device of the present invention.

701:電漿701: Plasma

702:基座702: Pedestal

703:晶圓703: Wafer

704:電子或離子704: Electron or Ion

705:微小顆粒705: Tiny particles

Claims (17)

一種耐電漿腐蝕零部件,其中,包括一零部件本體,該零部件本體表面具有一複合塗層,該複合塗層包括一磁性塗層和一耐電漿腐蝕塗層,該磁性塗層設於該零部件本體表面和該耐電漿腐蝕塗層之間。A plasma corrosion-resistant component, which includes a component body, the surface of the component body has a composite coating, the composite coating includes a magnetic coating and a plasma corrosion-resistant coating, the magnetic coating is provided on the Between the surface of the part body and the plasma corrosion resistant coating. 如請求項1所述之耐電漿腐蝕零部件,其中,該磁性塗層材料包括釤鈷磁體、釹鐵硼磁體、鐵氧體磁體、鐵鈷磁體、鋁鎳鈷磁體、鐵鉑合金磁體中的至少一種。The plasma corrosion-resistant component according to claim 1, wherein the magnetic coating material includes samarium cobalt magnets, neodymium iron boron magnets, ferrite magnets, iron cobalt magnets, alnico magnets, and iron platinum alloy magnets. at least one. 如請求項1所述之耐電漿腐蝕零部件,其中,該耐電漿腐蝕塗層材料包括稀土元素Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu中的至少一種。The plasma corrosion resistant component according to claim 1, wherein the plasma corrosion resistant coating material comprises rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm At least one of , Yb and Lu. 如請求項1所述之耐電漿腐蝕零部件,其中,該耐電漿腐蝕塗層包括稀土元素Y、Sc、La、Ce、Pr、Nd、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu的氧化物、氟化物或氟氧化物中的至少一種。The plasma corrosion resistant component according to claim 1, wherein the plasma corrosion resistant coating comprises rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, At least one of Yb, Lu oxide, fluoride or oxyfluoride. 如請求項1所述之耐電漿腐蝕零部件,其中,該磁性塗層的厚度小於等於100μm。The plasma corrosion-resistant component according to claim 1, wherein the thickness of the magnetic coating is less than or equal to 100 μm. 一種如請求項1至請求項5中的任一項所述之複合塗層的形成方法,其中,包括以下步驟: 將一零部件本體置於一處理腔內,在該零部件本體表面塗覆第一塗層,該塗層為磁性塗層; 在該第一塗層表面塗覆第二塗層,該塗層為耐電漿腐蝕塗層; 為該第一塗層附加磁性。A method for forming a composite coating as described in any one of claim 1 to claim 5, comprising the following steps: A component body is placed in a processing chamber, and a first coating is applied on the surface of the component body, and the coating is a magnetic coating; A second coating is applied on the surface of the first coating, and the coating is a plasma corrosion resistant coating; Add magnetic properties to the first coating. 如請求項6所述之複合塗層形成方法,其中,該第一塗層的塗覆方法包括懸塗、噴塗、PVD、CVD、ALD、氣溶膠沉積法中的至少一種。The method for forming a composite coating according to claim 6, wherein the coating method of the first coating comprises at least one of suspension coating, spray coating, PVD, CVD, ALD, and aerosol deposition. 如請求項6所述之複合塗層形成方法,其中,該第二塗層的塗覆方法包括CVD、ALD、PVD中的至少一種。The method for forming a composite coating according to claim 6, wherein the coating method of the second coating comprises at least one of CVD, ALD, and PVD. 如請求項6所述之複合塗層形成方法,其中,該第二塗層的緻密度大於等於99%。The method for forming a composite coating according to claim 6, wherein the density of the second coating is greater than or equal to 99%. 如請求項6所述之複合塗層形成方法,其中,該附加磁性的方法為透過在零部件本體面設置N型或S型永磁體,或者透過脈衝磁場、直流磁場、交變磁場中的一種或多種組合的方式附加磁性。The method for forming a composite coating as claimed in claim 6, wherein the method of adding magnetism is by arranging N-type or S-type permanent magnets on the surface of the component body, or by one of pulsed magnetic field, DC magnetic field, and alternating magnetic field Or a combination of ways to add magnetism. 如請求項10所述之複合塗層形成方法,其中,該附加磁性的磁場方向透過改變N型或S型永磁體在零部件本體背面的設置位置來改變。The method for forming a composite coating as claimed in claim 10, wherein the direction of the magnetic field of the additional magnetism is changed by changing the arrangement position of the N-type or S-type permanent magnets on the backside of the component body. 如請求項6所述之複合塗層形成方法,其中,該附加磁性的磁場方向與零部件本體表面呈一夾角。The method for forming a composite coating according to claim 6, wherein the direction of the magnetic field of the additional magnetism forms an angle with the surface of the component body. 如請求項12所述之複合塗層形成方法,其中,該夾角為範圍為大於等於0°,小於等於90°。The method for forming a composite coating according to claim 12, wherein the included angle ranges from 0° to 90°. 一種電漿反應裝置,其中,包括一真空反應腔和如請求項1至請求項5中的任一項所述之耐電漿腐蝕零部件。A plasma reaction device, comprising a vacuum reaction chamber and the plasma corrosion-resistant component according to any one of claim 1 to claim 5. 如請求項14所述之電漿反應裝置,其中,該真空反應腔的內部腔壁表面具有如請求項6至請求項15中的任一項所述之複合塗層形成方法獲得的複合塗層。The plasma reaction device according to claim 14, wherein the inner cavity wall surface of the vacuum reaction chamber has the composite coating obtained by the composite coating formation method according to any one of claim 6 to claim 15 . 如請求項14所述之電漿反應裝置,其中,該電漿反應裝置為電感耦合電漿處理裝置,該耐電漿腐蝕零部件包括內襯套,覆蓋環、聚焦環、絕緣環、電漿約束環中的一種或多種。The plasma reaction device according to claim 14, wherein the plasma reaction device is an inductively coupled plasma processing device, and the plasma corrosion-resistant parts include an inner bushing, a cover ring, a focus ring, an insulating ring, and a plasma confinement ring. one or more of the rings. 如請求項14所述之電漿反應裝置,其中,該電漿反應裝置為電容耦合電漿處理裝置,該耐電漿腐蝕零部件包括氣體噴淋頭、上接地環、下接地環、移動環、覆蓋環、聚焦環、絕緣環、電漿約束環中的一種或多種。The plasma reaction device according to claim 14, wherein the plasma reaction device is a capacitively coupled plasma processing device, and the plasma corrosion resistant parts include a gas shower head, an upper ground ring, a lower ground ring, a moving ring, One or more of cover ring, focus ring, insulating ring, plasma confinement ring.
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