CN113594013B - Component, method and device for forming coating layer and plasma reaction device - Google Patents
Component, method and device for forming coating layer and plasma reaction device Download PDFInfo
- Publication number
- CN113594013B CN113594013B CN202010361061.6A CN202010361061A CN113594013B CN 113594013 B CN113594013 B CN 113594013B CN 202010361061 A CN202010361061 A CN 202010361061A CN 113594013 B CN113594013 B CN 113594013B
- Authority
- CN
- China
- Prior art keywords
- plasma
- component
- resistant coating
- evaporation source
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000011247 coating layer Substances 0.000 title description 2
- 238000000576 coating method Methods 0.000 claims abstract description 109
- 239000011248 coating agent Substances 0.000 claims abstract description 106
- 210000002381 plasma Anatomy 0.000 claims description 168
- 239000007789 gas Substances 0.000 claims description 67
- 238000001704 evaporation Methods 0.000 claims description 60
- 230000008020 evaporation Effects 0.000 claims description 59
- 238000005240 physical vapour deposition Methods 0.000 claims description 26
- 239000011148 porous material Substances 0.000 claims description 24
- 230000004913 activation Effects 0.000 claims description 16
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 238000007735 ion beam assisted deposition Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 3
- 230000002787 reinforcement Effects 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000005260 corrosion Methods 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000001020 plasma etching Methods 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 9
- 239000013618 particulate matter Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The invention belongs to the technical field of plasma etching, and discloses a method for forming a plasma-resistant coating, a device for forming the plasma-resistant coating, parts for a plasma reaction device and the plasma reaction device. The plasma reaction device comprises a reaction cavity, a plasma environment is arranged in the reaction cavity, the parts are exposed to the plasma environment, the parts comprise a part body and a plasma-resistant coating, the part body is provided with a hole structure, and the plasma-resistant coating is positioned on the surface of the part body and the inner surface of the hole structure. In the actual use process of the part, the corrosion-resistant coating on the inner surface of the hole structure of the part is not easy to be bombarded by plasma to generate a falling phenomenon, so that the risk of metal pollution caused by falling of the plasma-resistant coating is further reduced, the service life of the part can be prolonged, and the yield of a plasma etching process is improved.
Description
Technical Field
The invention relates to the technical field of plasma etching, in particular to a part for a plasma reaction device, a method for forming a plasma-resistant coating, a device for forming the plasma-resistant coating and the plasma reaction device.
Background
In the fabrication of semiconductor devices, plasma etching is a critical process for processing a substrate to be processed into a design pattern. However, during the plasma etching process, physical bombardment and chemical reactions may also act on all parts of the etching chamber that are in contact with the plasma, causing corrosion. For workpieces that are within an etch chamber, some plasma-resistant coating (e.g., yttria coating) is typically applied to protect the workpiece from corrosion. Existing coating application methods include spraying, sputtering, physical vapor deposition, chemical vapor deposition, and the like. And because the physical vapor deposition coating has high compactness (approaching 100% of theoretical density), low coating temperature (less than 600 ℃), strong coating binding force and high purity (other components except main elements are below the concentration level of parts per million), the physical vapor deposition method is adopted to coat the corrosion-resistant coating on the key workpiece of the cavity, and the corrosion-resistant coating is widely applied to etching the internal cavity.
For workpieces with a common large plane, the physical vapor deposition process can achieve good coating. For some special-shaped pieces, such as workpieces with a large number of needle hole structures and small hole structures, the physical vapor deposition process cannot well coat the inner wall of the hole structure, and the binding force is weak. In the actual etching cavity using process, after the internal coating of the workpiece containing a large number of hole structures is continuously subjected to the physical bombardment and chemical reaction of plasma, the coating gradually falls off from the workpiece to form tiny particles, and the tiny particles are scattered in the cavity. If scattered on the wafer, serious particle problems and metal contamination problems are caused, and especially for advanced processes below 10nm, the critical etching process yield is reduced.
Disclosure of Invention
The first object of the present invention is to provide a component for a plasma reactor, which aims to solve the technical problem that the inner wall of a hole structure of the component in the plasma-resistant device cannot be coated with a plasma-resistant coating, so that serious pollution is caused by particles and metals.
In order to achieve the above purpose, the invention provides the following scheme:
in one aspect, the invention provides a component for a plasma reaction device, the plasma reaction device comprises a reaction chamber, a plasma environment is arranged in the reaction chamber, the component is exposed to the plasma environment, the component comprises a component body and a plasma-resistant coating, the component body is provided with a hole structure, and the plasma-resistant coating is positioned on the surface of the component body and the inner surface of the hole structure.
Optionally, the material of the plasma resistant coating comprises at least one of an oxide of a rare earth element, a fluoride of a rare earth element, or an oxyfluoride of a rare earth element.
Optionally, the rare earth element comprises at least one of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium.
Optionally, the aperture structure has at least one opening.
Optionally, the hole structure comprises a through hole or a blind hole.
Optionally, the cross-sectional shape of the pore structure comprises: circular or polygonal.
Optionally, the aspect ratio of the pore structure ranges from 1:1 to 100:1.
Optionally, the maximum width of the cross section of the pore structure is in the range of 0.1 to 50mm.
Another aspect of the present invention is to provide a plasma reaction apparatus, comprising:
a reaction chamber in which a plasma environment is formed;
the components described above are exposed to the plasma environment.
Optionally, the plasma environment includes: fluorine-containing and/or oxygen-containing plasmas.
Optionally, the plasma reaction device is an inductively coupled plasma reaction device, and the component includes: at least one of a bushing, ceramic window, nozzle, shield ring, gas flange, or electrostatic chuck.
Optionally, the plasma reaction device is a capacitive coupling plasma reaction device, and the component includes: at least one of a showerhead, an electrostatic chuck, a shield ring, or a gas flange.
In yet another aspect, the invention provides a method of forming a plasma resistant coating comprising:
providing a part body, wherein the part body is provided with a hole structure;
introducing an evaporation source molecular flow into the surface of the part body, wherein the evaporation source molecular flow collides with the surface of the part body to form a plasma-resistant coating;
introducing gas molecules at the opening ends of the hole structures, wherein the gas molecules collide with the evaporation source molecular flow, and forming the plasma-resistant coating on the inner surfaces of the hole structures.
Optionally, the gas molecules are at least one of inert gas, oxygen or nitrogen.
Optionally, the gas molecules are transported intermittently or pulsed to the open ends of the pore structure.
Optionally, the method further comprises heating the component body.
Optionally, the method further comprises subjecting the gas molecules to an activation treatment.
Optionally, the activation treatment comprises a plasma enhanced activation treatment or an ion enhanced activation treatment.
Alternatively, the deposition method for forming the plasma resistant coating is physical vapor deposition.
Optionally, the physical vapor deposition includes at least one of unassisted physical vapor deposition, plasma enhanced physical vapor deposition, ion beam assisted deposition, microwave assisted physical vapor deposition, or reactive physical vapor deposition.
In yet another aspect, the present invention provides an apparatus for forming a plasma resistant coating, comprising:
a reaction chamber in which a vacuum environment is formed;
an evaporation source positioned in the reaction cavity;
the part body is arranged opposite to the evaporation source;
the gas buffer cavity is arranged at one end of the part far away from the evaporation source;
and the gas conveying pipeline is used for conveying gas molecules to the gas buffer cavity.
Optionally, the device further comprises heaters arranged on two sides of the part body, and the heaters are used for heating the part body.
Optionally, the device further comprises a reinforcing source arranged between the evaporation source and the part body, wherein the reinforcing source is used for carrying out activation treatment on the gas molecules.
The invention has the beneficial effects that:
the component for the plasma reaction device provided by the embodiment of the invention comprises a reaction cavity, wherein a plasma environment is arranged in the reaction cavity, the component is exposed in the plasma environment, the component comprises a component body and a plasma-resistant coating, the component body is provided with a hole structure, and the plasma-resistant coating is positioned on the surface of the component body and the inner surface of the hole structure. The plasma-resistant coating on the surface of the part body or in the hole structure has strong binding force with the part body, so that the plasma-resistant coating is not easy to fall off under the action of physical bombardment and chemical reaction, thereby being beneficial to reducing particle pollution and improving the yield of the manufacturing process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a component;
FIG. 2 is a schematic view of a plasma reaction apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a component according to an embodiment of the present invention;
FIG. 4 is a flow chart of forming a plasma resistant coating on a component provided by an embodiment of the present invention;
FIG. 5 is a schematic illustration of an intermediate process of a method for forming a plasma resistant coating through a via provided by an embodiment of the present invention;
FIG. 6 is a schematic illustration of an intermediate process of a blind via formation plasma resistant coating method provided by an embodiment of the present invention;
fig. 7 is a schematic structural view of an apparatus for forming a plasma resistant coating according to an embodiment of the present invention.
Reference numerals:
100. a component body; 200. a pore structure; 210. a through hole; 220. a blind hole; 300. a plasma resistant coating; 400. evaporating source molecular flow; 500. a gas molecule;
11. a ceramic window; 12. a bushing; 13. a nozzle; 14. a shielding ring; 15. an electrostatic chuck; 21. a reaction chamber; 22. an evaporation source; 23. an enhancement source; 24. a gas buffer chamber; 25. a gas delivery conduit; 26. a heater;
10. a component body; 20. pore structure.
Detailed Description
The plasma reaction device comprises a reaction cavity, wherein a plasma environment is arranged in the reaction cavity, and parts are exposed in the plasma environment, so that the surfaces of the parts are required to be coated with corrosion-resistant coatings due to strong corrosiveness of the plasmas, and the parts are required to be prevented from corroding the parts.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a component, where the component includes a component body 10, the component body 10 has a hole structure 20, and in general, an evaporation source molecular flow is introduced to make the component body 10 and the evaporation source molecular flow face each other, and the evaporation source molecular flow collides with the component body 10 to form a plasma-resistant coating on the surface of the component body. However, when the evaporation source molecular flow encounters the hole structure 20, the molecular flow continues to fly along a straight line, only collides with the part body 10 near the interface of the hole structure 20, and the partially scattered molecular flow collides with the molecular flow in the subsequent straight line to deposit and form a coating near the interface. Because of the large energy loss after the secondary collision, the kinetic energy of the molecular flow deposited on the component body 10 is small, so that the bonding force between the plasma-resistant coating formed on the inner surface of the pore structure 20 and the component body 10 is weak. In the actual etching process, the plasma-resistant coating in the parts containing a large number of hole structures 20 is subjected to physical bombardment and chemical reaction of plasma, and then falls off from the parts preferentially to form tiny particles, and the tiny particles are scattered in the reaction chamber. These particles, if scattered on the substrate to be treated, cause serious problems of particle contamination and metal contamination, especially for advanced processes below 10nm, which can lead to a reduction in the yield of critical etching processes.
In order to solve the technical problems, the invention provides a part for a plasma reaction device, a method for forming a plasma-resistant coating, a device for forming the plasma-resistant coating and the plasma reaction device. The part comprises a part body and a plasma-resistant coating, wherein the part body is provided with a hole structure, the plasma-resistant coating is positioned on the surface of the part body and the inner surface of the hole structure, and the plasma-resistant coating can reduce particle pollution and metal pollution and improve the yield of the manufacturing process.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Furthermore, the description of the "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
FIG. 2 is a schematic structural view of a plasma reaction apparatus according to the present invention.
Referring to fig. 2, the plasma reaction apparatus includes: a reaction chamber 21, wherein a plasma environment is arranged in the reaction chamber 21; parts, which are exposed to plasma environment.
The plasma reaction apparatus further includes: the substrate processing device comprises a base, a plasma body and a plasma body, wherein the base is used for bearing a substrate W to be processed, and the plasma body is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to apply the plasma resistant coating 300 on the surface of the component body. When the component body 100 has the hole structure 200, the inner surface of the hole structure 200 also needs to be coated with the plasma resistant coating 300 to prevent the plasma from corroding the inner surface of the hole structure 200.
With continued reference to fig. 2, in this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the parts exposed to the plasma environment include: a liner 12, a ceramic window 11, a nozzle 13, a shield ring 14, a gas flange (not shown), and an electrostatic chuck 15. Both the surfaces of the component body 100 and the interior surfaces of the hole structure 200 require a plasma resistant coating 300 to prevent plasma erosion.
In a specific application, the plasma reaction device may also be a capacitive coupling plasma reaction device, and correspondingly, the parts exposed to the plasma environment include: at least one of a showerhead, an electrostatic chuck, a shield ring, or a gas flange. Both the surfaces of the component body 100 and the interior surfaces of the hole structure 200 require a plasma resistant coating 300 to prevent plasma erosion.
Details of the components are described below:
fig. 3 is a schematic structural diagram of a component according to an embodiment of the present invention.
Referring to fig. 3, the component includes a component body 100 and a plasma-resistant coating 300, the component body 100 includes a hole structure 200, and the plasma-resistant coating 300 is disposed on a surface of the component body 100 and an inner surface of the hole structure 200.
Although the parts are exposed to the plasma environment of the plasma reaction device, the surfaces of the parts body 100 and the inner surfaces of the hole structures 200 are coated with the plasma-resistant coating 300, and the bonding force between the plasma-resistant coating 300 and the parts body 100 is strong, so that the parts are exposed to the plasma environment, and the plasma is hard to fall off due to physical bombardment and chemical reaction of the plasmas, thereby being beneficial to reducing the problems of particle pollution and metal pollution and improving the yield of the manufacturing process.
In one example embodiment, the plasma resistant coating 300 includes at least one of an oxide of a rare earth element, a fluoride of a rare earth element, or an oxyfluoride of a rare earth element. The compound has good corrosion resistance, and the formed protective coating can effectively prevent corrosion caused by plasma.
In one example embodiment, the rare earth element comprises at least one of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium. The plasma-resistant protective coating composed of the rare earth element oxide, fluoride or oxyfluoride can well protect parts in the etching cavity, so that the parts in the etching cavity can not be corroded by physical bombardment and chemical reaction in the plasma etching process.
In one embodiment, the aspect ratio of the hole structure 200 ranges from 1:1 to 100:1. The aspect ratio ranges are typical in the art for components used in plasma reactor apparatus, and the aspect ratio ranges of the hole structure 200 provided by the components suitable for the present invention include, but are not limited to, the above ranges.
In one embodiment, the maximum width of the cross-section of the aperture structure 200 is in the range of 0.1-50 mm. The maximum width of the cross section of the hole structure 200 is in the range of the size of the hole structure 200 commonly used in the art for parts used in plasma reaction devices, and the maximum width of the cross section of the hole structure 200 carried by the parts to which the present invention is applicable includes but is not limited to the above range.
The aperture structure 200 has at least one opening, and in one embodiment, the aperture structure 200 is a through-hole 210, and the through-hole 210 refers to an aperture structure that is open at both ends. In another embodiment, the hole structure 200 is a blind hole 220, and the blind hole 220 is a hole structure with one end open and the other end closed. In other embodiments, the aperture structure may also have more than two openings, such as: and a hole structure with a three-way opening.
The cross-sectional shape of the pore structure 200 is not limited, and may be any shape, for example: circular or polygonal.
Fig. 4 is a flowchart of forming a plasma resistant coating 300 on a surface of a component body 100 according to an embodiment of the present invention.
Referring to fig. 4, the method includes:
providing a component body 100, the component body 100 comprising a hole structure 200;
introducing an evaporation source molecular flow 400 to the surface of the part body 100, wherein the evaporation source molecular flow 400 collides with the surface of the part body 100 to form a plasma-resistant coating 300;
gas molecules 500 are introduced into the open ends of the pore structure 200, and the gas molecules 500 collide with the evaporation source molecular flow 400, so that the plasma-resistant coating 300 is deposited on the inner surface of the pore structure 200.
By adopting the formation method, the evaporation source molecular flow 400 flies in a straight line in the reaction cavity 21 until colliding with the surface of the part body 100, and the plasma-resistant coating 300 is deposited on the surface of the part body 100, and the adhesion force between the plasma-resistant coating 300 formed on the part body 100 and the part body 100 is strong because the evaporation source molecular flow 400 does not generate secondary scattering before being deposited on the part body 100 and has larger kinetic energy. The plasma resistant coating 300 on the surface of the component body 100 is not easy to fall off to form particles under the action of physical bombardment and chemical reaction, so that the particle pollution and the metal pollution are reduced.
And at the hole structure 200 of the component, introducing gas molecules 500 at the opening end of the hole structure 200, wherein a large number of collisions occur between the gas molecules 500 and the evaporation source molecular flow 400 in the hole structure 200, and the evaporation source molecular flow 400 after collision continuously flies in a changed flight direction until collision occurs with the inner surface of the hole structure 200, so that the plasma-resistant coating 300 is formed on the inner surface of the hole structure 200. On one hand, the introduced gas molecules 500 change the movement direction of the evaporation source molecular flow 400, increase the probability of collision with the inner surface of the pore structure 200, and enhance the binding force with the inner surface of the pore structure 200; on the other hand, the collision of the introduced gas molecules 500 with the evaporation source molecular flow 400 lengthens the movement path of the evaporation source molecular flow 400, increases the deposition rate of the inner surface of the hole structure 200 having a large ratio of depth to width, and enables the evaporation source molecular flow 400 to deposit on the inner surface of the deeper hole structure 200, thereby forming the plasma-resistant coating 300. The bonding force between the plasma-resistant coating 300 and the pore structure 200 is strong, so that the plasma-resistant coating 300 in the pore structure 200 is not easy to fall off to form tiny particles under the action of physical bombardment and chemical reaction, and therefore, the particle pollution and the metal pollution in the reaction cavity 21 are reduced.
In one embodiment, the gas molecules 500 are at least one of an inert gas, oxygen, or nitrogen. The inert gas may be helium, argon, neon, or the like, so long as the introduced gas molecules 500 do not chemically react with the evaporation source molecular flow 400. Preferentially, gas molecules 500 with larger molecular mass and larger collision cross-sectional area can be selected, so that the collision probability of the gas molecules 500 and the evaporation source molecular flow 400 is increased, and the deposition of the evaporation source molecular flow 400 on the inner surface of the hole structure 200 is better promoted, so that the plasma-resistant coating 300 is formed.
In one embodiment, the gas molecules 500 are delivered to the ends of the hole structures 200 in a gap or pulse manner, so that the deposition quality of the evaporation source molecular flow 400 on the surface outside the hole structures 200 of the parts is not affected while the flight direction of the evaporation source molecular flow 400 is changed. The introduction of the gas molecules 500 causes the pressure in the reaction chamber 21 to rise, and the reaction chamber 21 is a vacuum reaction chamber. The mean free path of the evaporation source molecular flow 400 is reduced, which causes energy loss of the evaporation source molecular flow 400 before the deposition of the component body 100, and affects the deposition quality of the plasma resistant coating 300. On the one hand, the collision probability between the part body 100 and the evaporation source molecular flow 400 can be increased by conveying the gas molecules 500 in a gap or pulse mode, and the deposition direction of the evaporation source molecular flow 400 can be changed; on the other hand, collision energy loss caused by the large amount of introduced gas molecules 500 can be reduced, and the plasma-resistant coating 300 and the surface of the part body 100 are ensured to have stronger bonding force; in yet another aspect, the gas molecules 500 enter through the gas buffer chamber 24 having a larger volume, further reducing the effect of introducing the gas molecules 500 on the vacuum reaction chamber pressure. In this way, the introduced gas molecules can both reduce the influence of the introduced gas molecules 500 on the reaction environment and ensure the quality of the component body 100 in which the plasma-resistant coating 300 is formed.
In one embodiment, the method further includes heat treating the component body 100. The heating treatment of the component body 100 can increase the kinetic energy of the gas molecules 500 and the evaporation source molecular flow 400 before and after collision, so that the evaporation source molecular flow 400 after collision with the gas molecules 500 can maintain larger kinetic energy, which is beneficial to further improving the binding force between the plasma-resistant coating 300 and the inner surface of the pore structure 200, and the plasma-resistant coating 300 in the pore structure 200 is less prone to falling off to form tiny particles under the effects of physical bombardment and chemical reaction, thus being beneficial to further reducing particle pollution and metal pollution.
In one embodiment, the method further comprises activating the gas molecules 500. The activation treatment is to enhance kinetic energy of the evaporation source molecular flow 400 before deposition by using particles (electrons, positive and negative ions, neutral atoms, neutrons, etc.) having high energy. The kinetic energy of the gas molecules 500 after the activation treatment is greatly improved, so that the kinetic energy deposited on the inner surface of the pore structure 200 is larger, the bonding force between the plasma-resistant coating 300 and the inner surface of the pore structure 200 is further improved, and the plasma-resistant coating 300 in the pore structure 200 is less prone to falling off to form particles under the action of physical bombardment and chemical reaction, so that the particle pollution and the metal pollution are further reduced.
In one embodiment, the means for activating includes plasma enhanced activation or ion enhanced activation. In particular applications, the activation treatment may also be performed by means of plasma-enhanced activation and ion-enhanced activation.
In one embodiment, the method of depositing the plasma resistant coating 300 is physical vapor deposition. The physical vapor deposition method can form the plasma resistant coating 300 on the surface of the component body 100 on the basis of the invention so as to protect the component body 100 from being corroded by plasma.
In one example embodiment, the physical vapor deposition includes at least one of unassisted physical vapor deposition, plasma enhanced physical vapor deposition, ion beam assisted deposition, microwave assisted physical vapor deposition, or reactive physical vapor deposition. The plasma-resistant coating 300 can be formed on the surface of the part body 100 by the physical vapor deposition method, and the plasma-resistant coating 300 formed by the physical vapor deposition method is compact, so that the plasma-resistant coating 300 has strong protection capability on the part body 100.
Fig. 5 is a schematic illustration of an intermediate process of a method for forming a plasma resistant coating 300 on a via 210 according to an embodiment of the present invention.
In one embodiment, the hole structure 200 is a through hole 210, i.e. both ends of the hole structure 200 are open, see fig. 5. At this time, the gas molecules 500 are introduced into the evaporation source molecular flow 400 from one end of the pore structure 200. In this way, by introducing the gas molecules 500 and the evaporation source molecular flow 400 to collide with each other on the inner surface of the hole structure 200, the deposition direction of the evaporation source molecular flow 400 is changed, so that the coating of the plasma-resistant coating 300 on the inner surface of the through holes 210 at the two ends with a larger depth-to-width ratio can be realized, and meanwhile, the evaporation source molecular flow 400 is conveniently introduced, and the deposition quality of the evaporation source molecular flow 400 on the surface of the part body 100 is not affected. The bonding force between the plasma-resistant coating 300 and the through hole 210 is strong, and the plasma-resistant coating 300 in the through hole 210 is not easy to fall off to form tiny particles under the action of physical bombardment and chemical reaction, so that the particle pollution and the metal pollution in the reaction cavity 21 are reduced.
Fig. 6 is a schematic illustration of an intermediate process of the method of forming the plasma resistant coating 300 from the blind holes 220 in an embodiment of the invention.
In one embodiment, the hole structure 200 is a blind hole 220, i.e., the hole structure 200 has only one end open, see fig. 6. At this time, the gas molecules 500 are introduced from one end of the hole structure 200 into the evaporation source molecular flow 400, i.e., the open end is introduced, so that the evaporation source molecular flow 400 collides with the gas molecules 500 when entering the hole structure 200, and the flight direction of the evaporation source molecular flow 400 is changed. The invention is also applicable to the application of the plasma resistant coating 300 to the surface of the component body 100 with respect to the blind holes 220 mentioned in the present embodiment. The bonding force between the plasma-resistant coating 300 and the blind hole 220 is strong, and the plasma-resistant coating 300 in the blind hole 220 is not easy to fall off to form tiny particles under the action of physical bombardment and chemical reaction, so that the particle pollution and the metal pollution in the reaction cavity 21 are reduced.
The method for forming the plasma-resistant coating 300 can be applied to the coating process of the multilayer composite coating on the inner surface of the hole structure 200, and the corrosion phenomenon of parts contacted with plasma can be better avoided only by repeating the method for forming the multilayer composite coating for a plurality of times.
Fig. 7 is a schematic structural view of an apparatus for forming a plasma resistant coating 300 according to an embodiment of the present invention, which is suitable for forming the plasma resistant coating 300 for the component body 100 of the through hole 210 by the hole structure 200.
Referring to fig. 7, an apparatus for forming a plasma resistant coating 300 includes: the reaction chamber 21, the evaporation source 22, parts, the gas buffer chamber 24 and the gas conveying pipeline 25, wherein the reaction chamber 21 is a vacuum reaction chamber, and the evaporation source 22, the parts and the gas buffer chamber 24 are all positioned in the reaction chamber 21. The evaporation source 22 is a target material for finally forming the plasma resistant coating 300, and the component is disposed opposite to the evaporation source 22, so that the evaporation source molecular flow 400 formed by the evaporation source 22 can be introduced into the hole structure 200 while being directed to the component body 100. One end of the gas delivery tube is connected to the gas buffer chamber 24, and the hole structure 200 ensures that gas molecules 500 introduced from the gas delivery tube 25 can be intermittently introduced into the hole structure 200 from the gas buffer chamber 24.
In one embodiment, the apparatus for forming the plasma resistant coating 300 further includes heaters 26 disposed at both sides of the component to heat the component, thereby increasing the kinetic energy of the gas molecules 500 before collision, enabling the evaporation source molecular flow 400 after collision with the gas molecules 500 to change the movement direction, and depositing to form the plasma resistant coating 300.
In one embodiment, the apparatus for forming the plasma resistant coating 300 further includes a reinforcement source 23. The enhanced source 23 may enable the evaporation source molecular flow 400 to be more fully directed toward the component body 100 and into the pore structure 200.
In a specific application, the apparatus for forming the plasma resistant coating 300 is also suitable for forming the plasma resistant coating 300 for the parts of the blind hole 210 by the hole structure 200, and in this case, in the apparatus for forming the plasma resistant coating 300, the gas buffer chamber 24 is disposed at the same position as the evaporation source 22 and the enhancement source 23.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (23)
1. The component for the plasma reaction device comprises a reaction cavity, wherein a plasma environment is arranged in the reaction cavity, and the component is exposed to the plasma environment.
2. The component of claim 1, wherein the plasma resistant coating material comprises at least one of an oxide of a rare earth element, a fluoride of a rare earth element, or an oxyfluoride of a rare earth element.
3. The component of claim 2, wherein the rare earth element comprises at least one of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium.
4. The component of claim 1, wherein the aperture structure has at least one opening.
5. The component of claim 4, wherein the hole structure comprises a through hole or a blind hole.
6. The component of claim 1, wherein the cross-sectional shape of the aperture structure comprises: circular or polygonal.
7. The component of claim 1, wherein the aspect ratio of the pore structure is in the range of 1:1 to 100:1.
8. The component of claim 1, wherein the pore structure has a cross-section with a maximum width in the range of 0.1 to 50mm.
9. A plasma reaction apparatus, comprising:
a reaction chamber in which a plasma environment is formed;
the component of any one of claims 1 to 8 being exposed to the plasma environment.
10. The plasma reaction apparatus of claim 9, wherein the plasma environment comprises: fluorine-containing and/or oxygen-containing plasmas.
11. The plasma reactor apparatus as set forth in claim 9 wherein said plasma reactor apparatus is an inductively coupled plasma reactor apparatus, said component parts comprising: at least one of a bushing, ceramic window, nozzle, shield ring, gas flange, or electrostatic chuck.
12. The plasma reactor apparatus as set forth in claim 9 wherein said plasma reactor apparatus is a capacitively coupled plasma reactor apparatus, said component parts comprising: at least one of a showerhead, an electrostatic chuck, a shield ring, or a gas flange.
13. A method of forming a plasma resistant coating comprising:
providing a part body, wherein the part body is provided with a hole structure;
introducing an evaporation source molecular flow into the surface of the part body, wherein the evaporation source molecular flow collides with the surface of the part body to form a plasma-resistant coating;
introducing gas molecules at the opening ends of the hole structures, wherein the gas molecules collide with the evaporation source molecular flow, and forming the plasma-resistant coating on the inner surfaces of the hole structures.
14. The method of claim 13, wherein the gas molecules are at least one of an inert gas, oxygen, or nitrogen.
15. The method of claim 13, wherein the gas molecules are delivered intermittently or pulsed to the open ends of the pore structure.
16. The method of claim 13, further comprising heat treating the component body.
17. The method of claim 13, further comprising subjecting the gas molecules to an activation treatment.
18. The method of claim 17, wherein the activation treatment comprises a plasma-enhanced activation treatment or an ion-enhanced activation treatment.
19. The method of claim 13, wherein the method of forming a plasma resistant coating is physical vapor deposition.
20. The method of claim 19, wherein the physical vapor deposition comprises at least one of unassisted physical vapor deposition, plasma enhanced physical vapor deposition, ion beam assisted deposition, microwave assisted physical vapor deposition, or reactive physical vapor deposition.
21. An apparatus for forming a plasma resistant coating, comprising:
a reaction chamber in which a vacuum environment is formed;
an evaporation source positioned in the reaction cavity;
the part body is arranged opposite to the evaporation source;
the gas buffer cavity is arranged at one end of the part far away from the evaporation source;
and the gas conveying pipeline is used for conveying gas molecules to the gas buffer cavity.
22. The plasma resistant coated device of claim 21 further comprising heaters disposed on either side of said component body, said heaters for heating the component body.
23. The plasma resistant coating forming apparatus according to claim 21, further comprising a reinforcement source disposed between said evaporation source and said component body, said reinforcement source for activating said gas molecules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010361061.6A CN113594013B (en) | 2020-04-30 | 2020-04-30 | Component, method and device for forming coating layer and plasma reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010361061.6A CN113594013B (en) | 2020-04-30 | 2020-04-30 | Component, method and device for forming coating layer and plasma reaction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113594013A CN113594013A (en) | 2021-11-02 |
| CN113594013B true CN113594013B (en) | 2024-01-26 |
Family
ID=78236991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010361061.6A Active CN113594013B (en) | 2020-04-30 | 2020-04-30 | Component, method and device for forming coating layer and plasma reaction device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113594013B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113936995B (en) * | 2021-12-17 | 2022-03-04 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794460A (en) * | 2012-10-29 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Coating used for improving semiconductor device performance |
| CN103866291A (en) * | 2012-12-18 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Corrosion-resistant pneumatic spray head and manufacture method thereof |
| CN104715993A (en) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
| CN108623330A (en) * | 2017-03-17 | 2018-10-09 | 应用材料公司 | The plasma resistant coating by atomic layer deposition of porous bodies |
| CN108878246A (en) * | 2017-05-10 | 2018-11-23 | 应用材料公司 | Multilayer plasma body for chamber part corrodes protection |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| US6863926B2 (en) * | 2002-01-15 | 2005-03-08 | David Mark Lynn | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
-
2020
- 2020-04-30 CN CN202010361061.6A patent/CN113594013B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794460A (en) * | 2012-10-29 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Coating used for improving semiconductor device performance |
| CN103866291A (en) * | 2012-12-18 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Corrosion-resistant pneumatic spray head and manufacture method thereof |
| CN104715993A (en) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
| CN108623330A (en) * | 2017-03-17 | 2018-10-09 | 应用材料公司 | The plasma resistant coating by atomic layer deposition of porous bodies |
| CN108878246A (en) * | 2017-05-10 | 2018-11-23 | 应用材料公司 | Multilayer plasma body for chamber part corrodes protection |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113594013A (en) | 2021-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6432256B1 (en) | Implanatation process for improving ceramic resistance to corrosion | |
| EP0313750A1 (en) | Magnetron sputter etching/deposition system | |
| JP2003158099A (en) | Etching method and etching device | |
| US20030029563A1 (en) | Corrosion resistant coating for semiconductor processing chamber | |
| JPH0426208B2 (en) | ||
| WO2004086451A2 (en) | Plasma generation using multi-step ionization | |
| KR20170131343A (en) | Hollow cathode plasma source | |
| CN101713065B (en) | Device for microwave plasma based low-energy ion implantation on internal surface of metal round pipe with small pipe diameter | |
| JP4563966B2 (en) | Semiconductor processing apparatus member and method for manufacturing the same | |
| EP2354268A1 (en) | Method of manufacturing optical filter | |
| CN113594013B (en) | Component, method and device for forming coating layer and plasma reaction device | |
| CN112053929A (en) | Component for plasma chamber interior and method of making same | |
| JP4512603B2 (en) | Halogen gas resistant semiconductor processing equipment components | |
| CN114250436B (en) | Corrosion-resistant coating preparation method, semiconductor part and plasma reaction device | |
| KR20230068373A (en) | Method and device of forming plasma resistant coating, part and plasma processing apparatus | |
| CN113808898B (en) | Plasma corrosion resistant part, reaction device and composite coating forming method | |
| CN104282518A (en) | Cleaning method for plasma treatment device | |
| CN113808935B (en) | Corrosion-resistant coating forming method and device, plasma component and reaction device | |
| CN114686848B (en) | Semiconductor component, semiconductor processing apparatus, and method of forming corrosion-resistant coating | |
| JP3946660B2 (en) | Method for producing halogen-resistant semiconductor processing device member | |
| Park et al. | Surface Analysis of Chamber Coating Materials Exposed to CF4/O2 Plasma. Coatings 2021, 11, 105 | |
| KR101972455B1 (en) | Bead Wire with environmental production process and Manufacturing method of thereof | |
| KR20240134229A (en) | Diffusion bonding of pure metal bodies | |
| JP4015063B2 (en) | Halogen-resistant metal member used for semiconductor processing equipment and method for manufacturing the same | |
| KR101541256B1 (en) | HMDSO layer and AF layer coating method on aluminum metal layer with ion source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |