CN113594013A - Component, method and device for forming coating thereof, and plasma reaction device - Google Patents
Component, method and device for forming coating thereof, and plasma reaction device Download PDFInfo
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- CN113594013A CN113594013A CN202010361061.6A CN202010361061A CN113594013A CN 113594013 A CN113594013 A CN 113594013A CN 202010361061 A CN202010361061 A CN 202010361061A CN 113594013 A CN113594013 A CN 113594013A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000007789 gas Substances 0.000 claims description 67
- 238000001704 evaporation Methods 0.000 claims description 49
- 230000008020 evaporation Effects 0.000 claims description 48
- 239000011148 porous material Substances 0.000 claims description 38
- 238000005240 physical vapour deposition Methods 0.000 claims description 25
- 238000001994 activation Methods 0.000 claims description 18
- 230000004913 activation Effects 0.000 claims description 15
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
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- 150000002500 ions Chemical class 0.000 claims description 5
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- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 3
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 3
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 238000007735 ion beam assisted deposition Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 3
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 238000001020 plasma etching Methods 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract 1
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- 238000010586 diagram Methods 0.000 description 11
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- 230000009471 action Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The invention belongs to the technical field of plasma etching, and discloses a method for forming a plasma-resistant coating, a device for forming the plasma-resistant coating, a part for a plasma reaction device and the plasma reaction device. The plasma reaction device comprises a reaction cavity, a plasma environment is arranged in the reaction cavity, the part is exposed in the plasma environment and comprises a part body and a plasma-resistant coating, the part body is provided with a hole structure, and the plasma-resistant coating is positioned on the surface of the part body and the inner surface of the hole structure. According to the part provided by the embodiment of the invention, in the actual use process of the part, the corrosion-resistant coating on the inner surface of the hole structure is not easy to be bombarded by plasma to generate a falling phenomenon, so that the risk of metal pollution caused by the falling of the plasma-resistant coating is further reduced, the service life of the part can be prolonged, and the yield of a plasma etching process is improved.
Description
Technical Field
The invention relates to the technical field of plasma etching, in particular to a part for a plasma reaction device, a method for forming a plasma-resistant coating, a device for forming the plasma-resistant coating and the plasma reaction device.
Background
In the manufacturing process of semiconductor devices, plasma etching is a critical process for processing a substrate to be processed into a designed pattern. However, during the plasma etching process, the physical bombardment and chemical reaction also act on all the parts in the etching chamber which are in contact with the plasma, causing corrosion. For workpieces located within the etch chamber, a plasma erosion resistant coating (e.g., yttria coating) is typically applied to protect the workpiece from erosion. The existing coating application methods include spraying, sputtering, physical vapor deposition, chemical vapor deposition, and the like. And because the compactness of the coating coated by physical vapor deposition is high (close to 100 percent of theoretical density), the coating temperature is low (less than 600 ℃), the binding force of the coating is strong, the purity is high (except main elements, other components are below the concentration of one million percent), the corrosion-resistant coating is coated on the key workpiece of the cavity by adopting the physical vapor deposition mode, and the coating is widely applied to the etching inner cavity.
For workpieces with common large planes, the physical vapor deposition process can achieve good coating. For some special-shaped pieces, such as workpieces with a large number of pinhole structures and small pore structures, the physical vapor deposition process cannot well coat the inner walls of the pore structures, and the bonding force is weak. In the use process of the actual etching cavity, the internal coating of the workpiece containing a large number of hole structures is gradually separated from the workpiece after being continuously subjected to the physical bombardment and chemical reaction of plasma, so that tiny particles are formed and are scattered in the cavity. If scattered on the wafer, it will cause serious particle and metal contamination problems, especially for advanced processes below 10nm, which will cause the yield of critical etching process to decrease.
Disclosure of Invention
The invention aims to provide a part for a plasma reaction device, which aims to solve the technical problem that the inner wall of a hole structure of the part in a plasma resistant device in the prior art cannot be coated with a plasma resistant coating to cause serious particle and metal pollution.
In order to achieve the purpose, the invention provides the following scheme:
the invention provides a part for a plasma reaction device, which comprises a reaction cavity, wherein a plasma environment is arranged in the reaction cavity, the part is exposed to the plasma environment, the part comprises a part body and a plasma-resistant coating, the part body is provided with a hole structure, and the plasma-resistant coating is arranged on the surface of the part body and the inner surface of the hole structure.
Optionally, the material of the plasma resistant coating comprises at least one of an oxide of a rare earth element, a fluoride of a rare earth element, or an oxyfluoride of a rare earth element.
Optionally, the rare earth element comprises at least one of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium.
Optionally, the pore structure has at least one opening.
Optionally, the hole structure comprises a through hole or a blind hole.
Optionally, the cross-sectional shape of the pore structure comprises: circular or polygonal.
Optionally, the aspect ratio of the pore structure ranges from 1:1 to 100: 1.
Optionally, the maximum width of the cross section of the pore structure is in the range of 0.1-50 mm.
Another aspect of the present invention provides a plasma reaction apparatus comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the above-mentioned components are exposed to the plasma environment.
Optionally, the plasma environment comprises: a fluorine and/or oxygen containing plasma.
Optionally, the plasma reaction apparatus is an inductively coupled plasma reaction apparatus, and the component includes: at least one of a bushing, a ceramic window, a nozzle, a shield ring, a gas flange, or an electrostatic chuck.
Optionally, the plasma reaction apparatus is a capacitively coupled plasma reaction apparatus, and the component includes: at least one of a showerhead, an electrostatic chuck, a shield ring, or a gas flange.
In yet another aspect, the present invention provides a method of forming a plasma resistant coating comprising:
providing a part body, wherein the part body is provided with a hole structure;
introducing evaporation source molecular flows to the surface of the part body, wherein the evaporation source molecular flows collide on the surface of the part body to form a plasma-resistant coating;
introducing gas molecules into the open end of the pore structure, wherein the gas molecules collide with the evaporation source molecular flow to form the plasma-resistant coating on the inner surface of the pore structure.
Optionally, the gas molecules are at least one of an inert gas, oxygen, or nitrogen.
Optionally, the gas molecules are delivered intermittently or in pulses to the open ends of the pore structure.
Optionally, the method further comprises heating the component body.
Optionally, the method further comprises subjecting the gas molecules to an activation treatment.
Optionally, the activation treatment comprises a plasma enhanced activation treatment or an ion enhanced activation treatment.
Optionally, the method of depositing to form the plasma resistant coating is physical vapor deposition.
Optionally, the physical vapor deposition comprises at least one of unassisted physical vapor deposition, plasma enhanced physical vapor deposition, ion beam assisted deposition, microwave assisted physical vapor deposition, or reactive physical vapor deposition.
In still another aspect, the present invention provides an apparatus for forming a plasma-resistant coating, comprising:
a reaction chamber, wherein a vacuum environment is arranged in the reaction chamber;
the evaporation source is positioned in the reaction cavity;
a component body disposed opposite to the evaporation source;
the gas buffer cavity is arranged at one end of the part, which is far away from the evaporation source;
and the gas conveying pipeline is used for conveying gas molecules to the gas buffer cavity.
Optionally, the component part further comprises heaters arranged on two sides of the component part body, and the heaters are used for heating the component part body.
Optionally, the component further comprises an enhancement source arranged between the evaporation source and the component body, and the enhancement source is used for performing activation treatment on the gas molecules.
The invention has the beneficial effects that:
the part for the plasma reaction device comprises a reaction cavity, a plasma environment is arranged in the reaction cavity, the part is exposed in the plasma environment, the part comprises a part body and a plasma-resistant coating, the part body is provided with a hole structure, and the plasma-resistant coating is positioned on the surface of the part body and the inner surface of the hole structure. The plasma-resistant coating on the surface of the part body or in the hole structure has strong binding force with the part body, so that the plasma-resistant coating is not easy to fall off under the action of physical bombardment and chemical reaction, thereby being beneficial to reducing particle pollution and improving the yield of the manufacturing process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of a component;
FIG. 2 is a schematic structural diagram of a plasma reaction apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of components provided in an embodiment of the present invention;
FIG. 4 is a flow chart of forming a plasma-resistant coating on a component provided by an embodiment of the present invention;
FIG. 5 is a schematic diagram of an intermediate process of a method for forming a plasma-resistant coating on a via according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an intermediate process of a method for forming a plasma-resistant coating on a blind via according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an apparatus for forming a plasma-resistant coating according to an embodiment of the present invention.
Reference numerals:
100. a component body; 200. a pore structure; 210. a through hole; 220. blind holes; 300. a plasma resistant coating; 400. evaporating source molecular flow; 500. gas molecules;
11. a ceramic window; 12. a bushing; 13. a nozzle; 14. a shield ring; 15. an electrostatic chuck; 21. a reaction chamber; 22. an evaporation source; 23. a source of enhancement; 24. a gas buffer chamber; 25. a gas delivery conduit; 26. a heater;
10. a component body; 20. pore structure.
Detailed Description
The plasma reaction device comprises a reaction cavity, wherein the reaction cavity is a plasma environment, the parts are exposed in the plasma environment, and the plasma has strong corrosivity, so that the surface of the part body needs to be coated with a corrosion-resistant coating to prevent the plasma from corroding the part body.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a component, the component includes a component body 10, the component body 10 has a pore structure 20, generally speaking, an evaporation source molecular flow is introduced, the component body 10 is arranged opposite to the evaporation source molecular flow, and the evaporation source molecular flow collides with the component body 10 to form a plasma-resistant coating on the surface of the component body. However, when the evaporation source molecular flow encounters the pore structure 20, the molecular flow continues to fly in a straight line, and collides with the component body 10 only in the vicinity of the interface of the pore structure 20, and a part of the scattered molecular flow collides with the subsequent molecular flow flying in a straight line for a second time to deposit and form a coating layer in the vicinity of the interface. Since the energy loss after the secondary collision is large and the kinetic energy of the molecular flow deposited on the component body 10 is small, the bonding force between the plasma-resistant coating formed on the inner surface of the pore structure 20 and the component body 10 is weak. In the use process of the actual etching chamber, the plasma-resistant coating in the parts containing a large number of pore structures 20 will fall off from the parts preferentially after being subjected to the physical bombardment and chemical reaction of plasma, and form tiny particles scattered in the reaction chamber. These particles, if scattered on the substrate to be processed, can cause serious particle contamination and metal contamination problems, especially for advanced processes below 10nm, which can cause a reduction in the yield of critical etch processes.
In order to solve the technical problems, the invention provides a part for a plasma reaction device, a method for forming a plasma-resistant coating, a device for forming the plasma-resistant coating and the plasma reaction device. The part comprises a part body and a plasma-resistant coating, wherein the part body is provided with a hole structure, the plasma-resistant coating is positioned on the surface of the part body and the inner surface of the hole structure, and the plasma-resistant coating can reduce particle pollution and metal pollution and improve the yield of the manufacturing process.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
FIG. 2 is a schematic structural diagram of a plasma reactor according to the present invention.
Referring to fig. 2, the plasma reaction apparatus includes: a reaction chamber 21, wherein a plasma environment is arranged in the reaction chamber 21; and (c) a component exposed to a plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base, wherein the base is used for bearing a substrate W to be processed, and the plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to coat the surface of the component body with the plasma-resistant coating 300. When the component body 100 has the hole structure 200, the inner surface of the hole structure 200 also needs to be coated with the plasma-resistant coating 300 to prevent plasma from corroding the inner surface of the hole structure 200.
Referring to fig. 2, in the present embodiment, the plasma reaction apparatus is an inductively coupled plasma reaction apparatus, and accordingly, the components exposed to the plasma environment include: a liner 12, a ceramic window 11, a nozzle 13, a shield ring 14, a gas flange (not shown), and an electrostatic chuck 15. Both the surface of the component body 100 and the inner surface of the hole structure 200 need to be coated with the plasma resistant coating 300 to prevent plasma erosion.
In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: at least one of a showerhead, an electrostatic chuck, a shield ring, or a gas flange. Both the surface of the component body 100 and the inner surface of the hole structure 200 need to be coated with the plasma resistant coating 300 to prevent plasma erosion.
The details of the components are as follows:
fig. 3 is a schematic structural diagram of components provided in the embodiment of the present invention.
Referring to fig. 3, the component includes a component body 100 and a plasma-resistant coating 300, the component body 100 includes a hole structure 200, and the plasma-resistant coating 300 is disposed on a surface of the component body 100 and an inner surface of the hole structure 200.
Although the component is exposed to the plasma environment of the plasma reaction apparatus, the plasma-resistant coating 300 is coated on the surface of the component body 100 and the inner surface of the hole structure 200, and the bonding force between the plasma-resistant coating 300 and the component body 100 is strong, so that the component is exposed to the plasma environment, and the plasma-resistant coating 300 is difficult to fall off due to the physical bombardment and chemical reaction of the plasma, thereby being beneficial to reducing the problems of particle contamination and metal contamination and improving the yield of the process.
In one embodiment, the plasma resistant coating 300 includes at least one of an oxide of a rare earth element, a fluoride of a rare earth element, or an oxyfluoride of a rare earth element. The compound has good corrosion resistance, and the formed protective coating can effectively prevent the corrosion caused by plasma.
In one embodiment, the rare earth element comprises at least one of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium. The plasma-resistant protective coating consisting of the oxide, the fluoride or the oxyfluoride of the rare earth elements can well protect parts in the etching cavity, so that the parts in the etching cavity can not be corroded by physical bombardment and chemical reaction in the plasma etching process.
In one embodiment, the aspect ratio of the hole structure 200 ranges from 1:1 to 100: 1. The aspect ratio range is the aspect ratio commonly used in the prior art for the components used in the plasma reactor, and the aspect ratio range of the hole structure 200 of the component to which the present invention is applied includes, but is not limited to, the above range.
In one embodiment, the maximum width of the cross-section of the hole structure 200 is in the range of 0.1 mm to 50 mm. The maximum width range of the cross section of the hole structure 200 is the size of the hole structure 200 commonly used in the related art for the components used in the plasma reaction apparatus, and the maximum width range of the cross section of the hole structure 200 carried by the component to which the present invention is applicable includes, but is not limited to, the above range.
The hole structure 200 has at least one opening, and in one embodiment, the hole structure 200 is a through hole 210, and the through hole 210 refers to a hole structure with two open ends. In another embodiment, the hole structure 200 is a blind hole 220, and the blind hole 220 is a hole structure with one end open and the other end closed. In other embodiments, the aperture structure may also have more than two openings, such as: the hole structure of the tee joint opening.
The cross-sectional shape of the cell structure 200 is not limited, and the cross-sectional shape may be any shape, such as: circular or polygonal.
Fig. 4 is a flow chart of forming a plasma-resistant coating 300 on the surface of the component body 100 according to an embodiment of the present invention.
Please refer to fig. 4, which includes:
providing a component body 100, the component body 100 including a hole structure 200;
introducing an evaporation source molecular flow 400 to the surface of the part body 100, wherein the evaporation source molecular flow 400 collides with the surface of the part body 100 to form a plasma-resistant coating 300;
By adopting the forming method, the evaporation source molecular flow 400 flies in a straight line in the reaction chamber 21 until colliding with the surface of the part body 100, and the plasma-resistant coating 300 is deposited on the surface of the part body 100, and since the evaporation source molecular flow 400 does not generate secondary scattering before being deposited on the part body 100 and has large kinetic energy, the plasma-resistant coating 300 formed on the part body 100 has strong bonding force with the part body 100. The plasma-resistant coating 300 on the surface of the component body 100 is not easy to fall off to form particles under the action of physical bombardment and chemical reaction, and thus, the particle pollution and the metal pollution are favorably reduced.
And at the hole structure 200 of the component, introducing gas molecules 500 at the opening end of the hole structure 200, wherein the gas molecules 500 and the evaporation source molecular flow 400 in the hole structure 200 collide with each other in a large amount, and the collided evaporation source molecular flow 400 changes the flight direction and continues to fly until colliding with the inner surface of the hole structure 200, so that the plasma-resistant coating 300 is formed on the inner surface of the hole structure 200. On one hand, the introduced gas molecules 500 change the motion direction of the evaporation source molecular flow 400, increase the probability of collision with the inner surface of the pore structure 200, and enhance the bonding force with the inner surface of the pore structure 200; on the other hand, the collision of the introduced gas molecules 500 with the evaporated source molecular stream 400 lengthens the motion path of the evaporated source molecular stream 400, increasing the deposition rate of the inner surface of the aperture structure 200 having a large ratio of depth-to-width ratio, so that the evaporated source molecular stream 400 can deposit on the deeper inner surface of the aperture structure 200 to form the plasma-resistant coating 300. The plasma-resistant coating 300 has a strong binding force with the pore structure 200, and thus the plasma-resistant coating 300 in the pore structure 200 is not easy to fall off to form tiny particles under the action of physical bombardment and chemical reaction, and thus, the particle pollution and the metal pollution in the reaction chamber 21 are favorably reduced.
In one embodiment, the gas molecules 500 are at least one of an inert gas, oxygen, or nitrogen. The inert gas may be helium, argon, neon, or the like, as long as the introduced gas molecules 500 do not chemically react with the evaporation source molecular stream 400. Preferably, the gas molecules 500 with larger molecular mass and larger collision cross-sectional area can be selected to increase the collision probability of the gas molecules 500 with the evaporation source molecular flow 400, and better promote the deposition of the evaporation source molecular flow 400 on the inner surface of the pore structure 200 to form the plasma-resistant coating 300.
In one embodiment, the gas molecules 500 are delivered to the end of the hole structure 200 in a gap or pulse manner, so that the flight direction of the evaporated molecular stream 400 is changed without affecting the deposition quality of the evaporated molecular stream 400 on the surface of the component other than the hole structure 200. The introduction of the gas molecules 500 causes the pressure in the reaction chamber 21 to rise, and the reaction chamber 21 is a vacuum reaction chamber. The mean free path of the evaporated source molecular flow 400 is reduced, which causes energy loss of the evaporated source molecular flow 400 before the deposition of the component body 100, thereby affecting the deposition quality of the plasma-resistant coating 300. By intermittently or pulse-type delivering of the gas molecules 500, on one hand, the collision probability between the component body 100 and the evaporation source molecular flow 400 can be increased, and the deposition direction of the evaporation source molecular flow 400 can be changed; on the other hand, the collision energy loss caused by introducing a large amount of gas molecules 500 can be reduced, and the plasma-resistant coating 300 and the surface of the part body 100 have stronger bonding force; in yet another aspect, the gas molecules 500 enter through the gas buffer chamber 24 having a larger volume, further reducing the effect of the introduced gas molecules 500 on the vacuum reaction chamber pressure. Thus, the introduced gas molecules can reduce the influence of the introduced gas molecules 500 on the reaction environment and ensure the quality of the component body 100 forming the plasma-resistant coating 300.
In one embodiment, the method further includes heat treating the component body 100. The heating treatment of the component body 100 can increase the kinetic energy of the gas molecules 500 and the evaporation source molecular stream 400 before and after the collision, so that the evaporation source molecular stream 400 after the collision with the gas molecules 500 keeps larger kinetic energy, which is beneficial to further improving the binding force between the plasma-resistant coating 300 and the inner surface of the pore structure 200, and the plasma-resistant coating 300 in the pore structure 200 is more difficult to fall off to form micro particles under the action of physical bombardment and chemical reaction, thereby being beneficial to further reducing particle pollution and metal pollution.
In one embodiment, the method further comprises subjecting the gas molecules 500 to an activation process. The activation treatment is a kinetic energy enhancing action before deposition of the evaporation source molecular flow 400 by particles having high energy (electrons, positive and negative ions, neutral atoms, neutrons, and the like). The kinetic energy of the gas molecules 500 after the activation treatment is greatly improved, so that the kinetic energy deposited on the inner surface of the pore structure 200 is larger, which is beneficial to further improving the binding force between the plasma-resistant coating 300 and the inner surface of the pore structure 200, and the plasma-resistant coating 300 in the pore structure 200 is more difficult to fall off to form particles under the action of physical bombardment and chemical reaction, so that the particle pollution and metal pollution are further reduced.
In one embodiment, the activation process includes plasma-enhanced activation or ion-enhanced activation. In specific application, the activation treatment can also be carried out by means of plasma enhanced activation and ion enhanced activation.
In one embodiment, the method of depositing the plasma resistant coating 300 is physical vapor deposition. The pvd method can form the plasma-resistant coating 300 on the surface of the component body 100 based on the present invention to protect the component body 100 from the plasma erosion.
In one embodiment, the physical vapor deposition comprises at least one of unassisted physical vapor deposition, plasma enhanced physical vapor deposition, ion beam assisted deposition, microwave assisted physical vapor deposition, or reactive physical vapor deposition. The above physical vapor deposition methods can all form the plasma-resistant coating 300 on the surface of the component body 100 on the basis of the present invention, and the plasma-resistant coating 300 formed by the physical vapor deposition method is denser, so that the plasma-resistant coating 300 has a stronger protective capability on the component body 100.
Fig. 5 is a schematic diagram of an intermediate process of a method for forming a plasma-resistant coating 300 on a via 210 according to an embodiment of the present invention.
In one embodiment, the hole structure 200 is a through hole 210, i.e. the hole structure 200 is open at both ends, see fig. 5. At this time, gas molecules 500 are introduced into the evaporation source molecular flow 400 from one end of the pore structure 200. In this way, by colliding the introduced gas molecules 500 with the evaporation source molecular flow 400 on the inner surface of the aperture structure 200, the deposition direction of the evaporation source molecular flow 400 is changed, so that the plasma-resistant coating 300 on the inner surface of the through-hole 210 with a large aspect ratio can be coated, and the introduction of the evaporation source molecular flow 400 is also facilitated without affecting the deposition quality of the evaporation source molecular flow 400 on the surface of the component body 100. The plasma-resistant coating 300 has strong binding force with the through hole 210, and the plasma-resistant coating 300 in the through hole 210 is not easy to fall off to form tiny particles under the action of physical bombardment and chemical reaction, thereby being beneficial to reducing the particle pollution and metal pollution in the reaction cavity 21.
Fig. 6 is a schematic intermediate process diagram of a method for forming a plasma-resistant coating 300 on blind via 220 in an embodiment of the present invention.
In one embodiment, the hole structure 200 is a blind hole 220, i.e. only one end of the hole structure 200 is open, see fig. 6. At this time, the gas molecules 500 are introduced from the end of the hole structure 200 where the evaporated source molecule flow 400 is introduced, i.e. the open end, so that the evaporated source molecule flow 400 collides with the gas molecules 500 when entering the hole structure 200, thereby changing the flight direction of the evaporated source molecule flow 400. The present invention can also realize the coating of the plasma-resistant coating 300 on the surface of the component body 100 with respect to the blind holes 220 mentioned in the present embodiment. The plasma-resistant coating 300 has strong binding force with the blind hole 220, and the plasma-resistant coating 300 in the blind hole 220 is not easy to fall off to form tiny particles under the action of physical bombardment and chemical reaction, thereby being beneficial to reducing the particle pollution and metal pollution in the reaction cavity 21.
The method for forming the plasma-resistant coating 300 provided by the invention can also be applied to a coating process of a multilayer composite coating on the inner surface of the pore structure 200, and the method provided by the invention is only required to be repeated for many times to form the multilayer composite coating, so that the corrosion phenomenon of parts in contact with plasma can be better avoided.
Fig. 7 is a schematic structural diagram of an apparatus for forming a plasma-resistant coating 300 according to an embodiment of the present invention, which is suitable for forming a plasma-resistant coating 300 on a component body 100 in which a hole structure 200 is a through hole 210.
Referring to fig. 7, the apparatus for forming the plasma-resistant coating 300 includes: the reaction chamber 21, the evaporation source 22, the parts, the gas buffer chamber 24 and the gas delivery pipeline 25, wherein the reaction chamber 21 is a vacuum reaction chamber, and the evaporation source 22, the parts and the gas buffer chamber 24 are all located in the reaction chamber 21. The evaporation source 22 is a target material for finally forming the plasma-resistant coating 300, and the components are arranged opposite to the evaporation source 22 so that the evaporation source molecular flows 400 formed by the evaporation source 22 can be introduced into the aperture structure 200 while being guided to the component body 100. One end of the gas delivery pipe is connected with the gas buffer cavity 24, and the hole structure 200 ensures that the gas molecules 500 introduced from the gas delivery pipe 25 can be intermittently input to the hole structure 200 from the gas buffer cavity 24.
In one embodiment, the apparatus for forming the plasma-resistant coating 300 further comprises heaters 26 disposed on both sides of the component to heat the component, thereby increasing the kinetic energy of the gas molecules 500 before collision, so that the evaporation source molecular flow 400 after collision with the gas molecules 500 can change the movement direction to deposit the plasma-resistant coating 300.
In one embodiment, the apparatus for forming the plasma resistant coating 300 further comprises an enhancement source 23. The enhancing source 23 can make the evaporation source molecular flow 400 more sufficiently directed to the component body 100 and introduced into the aperture structure 200.
In a specific application, the apparatus for forming the plasma-resistant coating 300 is also suitable for forming the plasma-resistant coating 300 on the component with the blind hole 210 having the hole structure 200, and in this case, the gas buffer chamber 24 is disposed at the same position as the evaporation source 22 and the enhancement source 23 on the component in the apparatus for forming the plasma-resistant coating 300.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (23)
1. A component for a plasma reactor apparatus, the plasma reactor apparatus comprising a reaction chamber, a plasma environment being present in the reaction chamber, the component being exposed to the plasma environment, wherein the component comprises a component body and a plasma-resistant coating, the component body having a pore structure, the plasma-resistant coating being located on a surface of the component body and on an inner surface of the pore structure.
2. The component part of claim 1, wherein the material of the plasma resistant coating comprises at least one of an oxide of a rare earth element, a fluoride of a rare earth element, or an oxyfluoride of a rare earth element.
3. The component part of claim 2, wherein the rare earth element comprises at least one of yttrium, scandium, lanthanum, cerium, praseodymium, neodymium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, or lutetium.
4. The component part of claim 1, wherein the pore structure has at least one opening.
5. The component part of claim 4, wherein the hole structure comprises a through hole or a blind hole.
6. The component part of claim 1, wherein the cross-sectional shape of the pore structure comprises: circular or polygonal.
7. The component part of claim 1, wherein the pore structure has an aspect ratio in the range of 1:1 to 100: 1.
8. The component part according to claim 1, wherein the cross-section of the hole structure has a maximum width in the range of 0.1 to 50 mm.
9. A plasma reaction apparatus, comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the component part of any of claims 1 to 8 exposed to the plasma environment.
10. The plasma reactor apparatus of claim 9 wherein said plasma environment comprises: a fluorine and/or oxygen containing plasma.
11. The plasma reactor apparatus of claim 9 wherein said plasma reactor apparatus is an inductively coupled plasma reactor apparatus, said components comprising: at least one of a bushing, a ceramic window, a nozzle, a shield ring, a gas flange, or an electrostatic chuck.
12. The plasma reactor apparatus of claim 9 wherein said plasma reactor apparatus is a capacitively coupled plasma reactor apparatus, said components comprising: at least one of a showerhead, an electrostatic chuck, a shield ring, or a gas flange.
13. A method of forming a plasma resistant coating, comprising:
providing a part body, wherein the part body is provided with a hole structure;
introducing evaporation source molecular flows to the surface of the part body, wherein the evaporation source molecular flows collide on the surface of the part body to form a plasma-resistant coating;
introducing gas molecules into the open end of the pore structure, wherein the gas molecules collide with the evaporation source molecular flow to form the plasma-resistant coating on the inner surface of the pore structure.
14. The method of claim 13, wherein the gas molecules are at least one of an inert gas, oxygen, or nitrogen.
15. The method of claim 13, wherein the gas molecules are delivered intermittently or in pulses to the open ends of the pore structure.
16. The method of claim 13, further comprising heat treating the component body.
17. The method of claim 13, further comprising subjecting the gas molecules to an activation process.
18. The method of claim 17, wherein the activation treatment comprises a plasma-enhanced activation treatment or an ion-enhanced activation treatment.
19. The method of claim 13, wherein the method of depositing to form the plasma resistant coating is physical vapor deposition.
20. The method of claim 19, wherein the physical vapor deposition comprises at least one of unassisted physical vapor deposition, plasma enhanced physical vapor deposition, ion beam assisted deposition, microwave assisted physical vapor deposition, or reactive physical vapor deposition.
21. An apparatus for forming a plasma resistant coating, comprising:
a reaction chamber, wherein a vacuum environment is arranged in the reaction chamber;
the evaporation source is positioned in the reaction cavity;
a component body disposed opposite to the evaporation source;
the gas buffer cavity is arranged at one end of the part, which is far away from the evaporation source;
and the gas conveying pipeline is used for conveying gas molecules to the gas buffer cavity.
22. The apparatus for forming a plasma resistant coating as recited in claim 21, further comprising heaters disposed on both sides of the component body, the heaters being adapted to heat the component body.
23. The apparatus for forming a plasma-resistant coating of claim 21, further comprising an enhancement source disposed between the evaporation source and the component body, the enhancement source for activating the gas molecules.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113936995A (en) * | 2021-12-17 | 2022-01-14 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| US20030180556A1 (en) * | 2002-01-15 | 2003-09-25 | Lynn David Mark | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
| CN103794460A (en) * | 2012-10-29 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Coating used for improving semiconductor device performance |
| CN103866291A (en) * | 2012-12-18 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Corrosion-resistant pneumatic spray head and manufacture method thereof |
| CN104715993A (en) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
| CN108623330A (en) * | 2017-03-17 | 2018-10-09 | 应用材料公司 | The plasma resistant coating by atomic layer deposition of porous bodies |
| CN108878246A (en) * | 2017-05-10 | 2018-11-23 | 应用材料公司 | Multilayer plasma body for chamber part corrodes protection |
-
2020
- 2020-04-30 CN CN202010361061.6A patent/CN113594013B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030029563A1 (en) * | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| US20030180556A1 (en) * | 2002-01-15 | 2003-09-25 | Lynn David Mark | Corrosive-resistant coating over aluminum substrates for use in plasma deposition and etch environments |
| CN103794460A (en) * | 2012-10-29 | 2014-05-14 | 中微半导体设备(上海)有限公司 | Coating used for improving semiconductor device performance |
| CN103866291A (en) * | 2012-12-18 | 2014-06-18 | 中微半导体设备(上海)有限公司 | Corrosion-resistant pneumatic spray head and manufacture method thereof |
| CN104715993A (en) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
| CN108623330A (en) * | 2017-03-17 | 2018-10-09 | 应用材料公司 | The plasma resistant coating by atomic layer deposition of porous bodies |
| CN108878246A (en) * | 2017-05-10 | 2018-11-23 | 应用材料公司 | Multilayer plasma body for chamber part corrodes protection |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113936995A (en) * | 2021-12-17 | 2022-01-14 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
| CN113936995B (en) * | 2021-12-17 | 2022-03-04 | 苏州长光华芯光电技术股份有限公司 | Semiconductor epitaxial structure and preparation method thereof |
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