CN113707525A - Component, method for forming plasma-resistant coating and plasma reaction device - Google Patents
Component, method for forming plasma-resistant coating and plasma reaction device Download PDFInfo
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- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 63
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 36
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- 238000000280 densification Methods 0.000 claims description 7
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- 229910052760 oxygen Inorganic materials 0.000 claims description 6
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention is applicable to the technical field of semiconductors, and discloses a part used in a plasma reaction device, a method for forming a plasma-resistant coating on the surface of the body of the part and the plasma reaction device. The plasma reaction device comprises a reaction cavity with a plasma environment inside, and the parts are exposed in the plasma environment and comprise: a component body; the plasma-resistant coating is coated on the surface of the component body, the plasma-resistant coating is a rare earth metal compound, the rare earth metal compound comprises at least one of oxide, fluoride or oxyfluoride of rare earth elements, the atomic radius of the rare earth elements in the rare earth metal compound is smaller than that of yttrium, and the relative atomic mass of the rare earth elements in the rare earth metal compound is larger than that of yttrium. The parts provided by the invention reduce the generation of tiny particles in the advanced plasma etching process and meet the requirements of the advanced process.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a part, a method for forming a plasma-resistant coating and a plasma reaction device.
Background
Plasma etch processes play a critical role in the field of integrated circuit manufacturing. The number of the latest plasma etching process steps in the 5nm process is increased to more than 17%. The power and steps of the advanced etching process are greatly improved, parts in the plasma etching chamber are required to have higher plasma physical bombardment and chemical corrosion resistance, fewer micro particle pollution and metal pollution sources are generated, and the stability and repeatability of the etching equipment process are further ensured.
Currently, in processes of 5nm or 3nm and below, there are severe particle contamination requirements, except that less than 28nm particles are required to be less than 10 throughout the life cycle of the part, and the sticking rate, i.e., the probability of 0@28nm particles, is to be considered. In order to meet the continuously shrinking line width requirement, the power and steps adopted in the plasma etching process technology are greatly improved.
The existing coating layer gradually fails in the advanced process (5nm and below), and has micro particle pollution, so that the requirement of the advanced process cannot be well met.
Disclosure of Invention
The first objective of the present invention is to provide a component for a plasma reaction apparatus, so as to solve the technical problem of particle contamination caused by failure of a plasma-resistant coating on the surface of a component body in a plasma etching process, so as to maintain the stability of the plasma reaction chamber environment and meet the requirement of advanced processes for fine particles.
In order to achieve the purpose, the invention provides the following scheme: a component for use in a plasma reactor apparatus, the plasma reactor apparatus comprising a reaction chamber having a plasma environment therein, the component being exposed to the plasma environment, the component comprising:
a component body;
the plasma-resistant coating is a rare earth metal compound, the rare earth metal compound comprises at least one of oxide, fluoride or oxyfluoride of rare earth elements, the atomic radius of the rare earth elements in the rare earth metal compound is smaller than that of yttrium, and the relative atomic mass of the rare earth elements in the rare earth metal compound is larger than that of yttrium.
Specifically, rare earth elements refer to lanthanides in the periodic table of chemical elements, including: lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), and 17 elements in total, which are closely related to 15 elements of the lanthanoid, yttrium (Y) and scandium (Sc). Namely, 17 chemical elements having atomic numbers of 21, 39 and 57 to 71 in IIIB group of the periodic system. Wherein, the 15 chemical elements with atomic numbers of 57-71 are also collectively called lanthanide elements.
Specifically, yttrium is in the third subgroup of the fifth period, and the atomic radii of the elements in the same group in the fifth period and the sixth period are similar, which is mainly because the elements in the third subgroup of the sixth period belong to lanthanide, and the radial distribution of the 4f orbitals in the lanthanide is close to the atomic nucleus, so that electrons are filled on the 4f orbitals, the atomic radii are not obviously increased, and simultaneously, due to the increase of nuclear charges, the attraction effect on outer layer electrons is enhanced, so that the atomic radii are reduced. The common property of rare earth elements is that the atomic structures are similar and the atomic radii are similar.
Therefore, by adopting the rare earth element with the relative atomic mass larger than that of yttrium and the rare earth element with the atomic radius smaller than that of yttrium, namely the lanthanide element, the 4f orbit of the lanthanide element has electrons, on one hand, when the plasma is physically bombarded, the 4f electrons can shield the physical bombardment effect of external electrons, the stable state of the atomic structure is kept, and the corrosion resistance of the plasma-resistant coating is improved; on the other hand, when the rare earth element atoms with larger relative atomic mass are subjected to the action of plasma physical bombardment, the energy lost by inelastic collision and collision is smaller, and the plasma resistance action is stronger. And the chemical property of the lanthanide is similar to that of yttrium, the plasma-resistant coating has better corrosion resistance compared with the yttrium-containing coating, when the plasma-resistant coating is coated on the surface of the component body, the stability of the plasma environment in the reaction cavity can be maintained, and the generation of tiny particles in the plasma etching process is reduced, so that the requirement of advanced plasma etching process (5nm and below) on tiny particles is met.
Optionally, the rare earth elements include: one or more of Ho, Er, Tm, Yb and Lu. The atomic radius of the rare earth element in these rare earth metal compounds is smaller than the atomic radius of yttrium, and the relative atomic mass of the rare earth element in the rare earth metal compounds is greater than the relative atomic mass of yttrium. The use of these rare earth elements can improve the resistance of the plasma coating to physical bombardment by plasma.
Optionally, the atomic percentage of the rare earth element is greater than or equal to 10%. Thus, the higher the atomic percentage ratio, the more the rare earth element plays a role in the plasma-resistant coating, the less the generated micro-particles, and the less the particle contamination generated during the plasma etching process of the plasma-resistant coating.
Optionally, the plasma resistant coating has a densification of 90% to 100%. Thus, the densification of the plasma-resistant coating is increased to nearly 100%, and the higher the densification of the plasma-resistant coating, the lower the probability of preferential corrosion due to defects in the surface structure of the coating, and the greater its erosion resistance, when exposed to corrosive and aggressive process gases during the plasma etching process. The reduction in erosion rate and fine particle release will reduce maintenance frequency, thereby increasing production efficiency.
A second object of the present invention is to provide a plasma reaction apparatus, comprising:
the reaction chamber is internally provided with a plasma environment;
the above-mentioned components for use in the plasma reaction apparatus, which are exposed to the plasma environment.
Therefore, the plasma-resistant coating has better corrosion resistance compared with the yttrium-containing coating by using the element with the chemical property similar to that of yttrium atoms as the material of the plasma-resistant coating, and the plasma-resistant coating can maintain the stability of the plasma environment in the reaction cavity when being coated on the surface of the part body.
Optionally, the plasma reaction device is a capacitively coupled plasma reaction device, and the parts include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. The surfaces of these components need to be coated with a plasma resistant coating to prevent plasma erosion.
Optionally, the plasma reaction device is an inductively coupled plasma reaction device; the component parts include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. The surfaces of these components need to be coated with a plasma resistant coating to prevent plasma erosion.
Optionally, the depth-to-width ratio of the process of the plasma reaction apparatus ranges from 200:1 to 10: 1. The larger the aspect ratio, the larger the directional etching (physical etching) required and hence the higher the rf power. Thus, the RF power is high, for example, the RF power is greater than or equal to 10000W, which is suitable for preparing the etching process with high aspect ratio.
A third object of the present invention is to provide a method for forming a plasma-resistant coating on the above-mentioned component, the method comprising:
providing a target material;
providing a part body, and enabling the part body to be arranged opposite to the target;
and evaporating the target material, so that the evaporated source molecular flow formed by evaporation is conveyed to the surface of the part body, and the plasma-resistant coating is formed on the surface of the part body.
Optionally, the method comprises: one of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method. Thus, the plasma-resistant coating can be coated on the surface of the component body by adopting the coating methods so as to avoid the component from being corroded by plasma.
Optionally, the method further comprises: a secondary enhancement process comprising at least one of a secondary plasma, an ion beam, or a radio frequency electric field. In this way, a better coating effect can be achieved by the auxiliary reinforcement.
Optionally, when the rare earth metal compound is an oxide or a fluoride, the number of the target is 1, and the material of the target is the same as that of the plasma-resistant coating. Therefore, the plasma-resistant coating has stronger protection effect due to the addition of the rare earth metal element.
Optionally, when the rare earth metal compound is oxyfluoride, the target includes a rare earth oxide target and a rare earth fluoride target, the rare earth oxide target is evaporated to form rare earth oxygen ions, the rare earth fluoride target is evaporated to form rare earth fluoride ions, and the rare earth oxygen ions and the rare earth fluoride ions are chemically reacted to form rare earth oxyfluoride. In this way, plasma resistant coatings having multiple compositions and compositional gradients can be applied.
The invention has the beneficial effects that:
the embodiment of the invention provides a part for a plasma reaction device, which comprises: a component body; the plasma-resistant coating coated on the surface of the part body is a rare earth metal compound, the plasma-resistant coating is made of rare earth elements with chemical properties similar to those of yttrium, and the rare earth elements have one more layer of 4f orbital electrons relative to yttrium, so that the relative atomic mass can be increased, and when the plasma-resistant coating is subjected to physical bombardment, the plasma-resistant coating can better resist the physical bombardment of the plasma, and further prevent the part body from being chemically corroded, and therefore the plasma-resistant coating has stronger plasma physical bombardment and chemical corrosion resistance. In the advanced plasma etching process, the plasma-resistant coating is more stable than the yttrium-containing coating, and can reduce the generation of micro particles, so that the advanced process requirement of 5nm or less can be met.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a plasma reactor apparatus in which a yttrium-containing coating is bombarded by a plasma to produce fine particle contamination;
FIG. 2 is a schematic structural diagram of a plasma reaction apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a component provided in an embodiment of the present invention;
FIG. 4 is a flow chart of the present invention for forming a plasma-resistant coating on the surface of a component body;
reference numerals:
100. plasma; 200. micro particles;
301. a bushing; 302. a gas nozzle; 303. an electrostatic chuck; 304. a focus ring; 305. an insulating ring; 306. a cover ring; 307. a substrate holding frame; 308. a ceramic cover plate; 309. a reaction chamber;
400. a plasma resistant coating; 500. a component body.
Detailed Description
The plasma reaction device comprises a reaction cavity, wherein the reaction cavity is a plasma environment, the parts are exposed in the plasma environment, and the plasma has strong corrosivity, so that the surface of the part body needs to be coated with a corrosion-resistant coating to prevent the plasma from corroding the part body.
Generally, as shown in FIG. 1, FIG. 1 is a schematic illustration of contamination of a yttrium-containing coating with a plasma 100 bombardment that produces minute particles 200. With the development of semiconductor devices, higher requirements are provided for the integration level of the semiconductor devices, in order to meet the requirements of high integration level, the line widths of the semiconductor devices are smaller and smaller, and the preparation of the grooves with smaller line widths greatly improves the power and steps adopted in the plasma etching process, so that the physical bombardment and the chemical corrosion strength of the plasma 100 subjected to the yttrium-containing coating are greatly enhanced, the action time is greatly prolonged, the yttrium-containing coating is easy to bombard to form tiny particles 200, and the particles 200 are scattered on the wafer or the cavity wall to generate particle pollution.
In order to solve the technical problems, the invention provides a part used in a plasma reaction device, a method for forming a plasma-resistant coating on the surface of the body of the part and the plasma reaction device.
The component parts include: the plasma-resistant part comprises a part body and a plasma-resistant coating coated on the surface of the part body; the plasma-resistant coating is a rare earth metal compound, the rare earth metal compound comprises at least one of oxide, fluoride or oxyfluoride of rare earth metal elements, the atomic radius of the rare earth elements in the rare earth metal compound is smaller than that of yttrium, and the relative atomic mass of the rare earth elements in the rare earth metal compound is larger than that of yttrium.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
FIG. 2 is a schematic structural diagram of a plasma reactor according to the present invention.
Referring to fig. 2, the plasma reaction apparatus includes: a reaction chamber 309, wherein a plasma environment is arranged in the reaction chamber 309; and (c) a component exposed to a plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base, wherein the base is used for bearing a substrate W to be processed, and the plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to coat the surface of the component body with a plasma-resistant coating.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: a liner 301, a gas nozzle 302, an electrostatic chuck 303, a focus ring 304, an insulating ring 305, a cover ring 306, a substrate holding frame 307, a ceramic cover plate 308, or a gas connection flange (not shown). The surfaces of these components need to be coated with a plasma resistant coating to prevent plasma erosion.
In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring 304, an insulator ring 305, an electrostatic chuck 303, a cover ring 306, or a substrate holding frame 307. The surfaces of these components need to be coated with a plasma resistant coating to prevent plasma erosion.
In one embodiment, the depth-to-width ratio of the process of the plasma reaction apparatus ranges from 200:1 to 10: 1. The larger the aspect ratio, the larger the directional etching (physical etching) required and hence the higher the rf power. Thus, in order to obtain a smaller line width, the rf power of the plasma reaction apparatus is set to 10000W or more. The higher the rf power, for example, the rf power is greater than or equal to 10000W, which is suitable for the etching process for preparing high aspect ratio.
The details of the components are described below.
As shown in fig. 3, the component parts include: a component body 500; the plasma-resistant coating 400 coated on the surface of the component body 500 is a rare earth metal compound, the rare earth metal compound comprises at least one of an oxide, a fluoride or an oxyfluoride of a rare earth element, the atomic radius of the rare earth element in the rare earth metal compound is smaller than that of yttrium, and the relative atomic mass of the rare earth element in the rare earth metal compound is larger than that of yttrium.
In particular, rare earth metal oxides encompass lanthanide oxides, having atomic numbers from 57 to 71, and scandium (Z ═ 21) and yttrium (Z ═ 39) oxides, due to the similar outer shell electronic structure. The rare earth oxides exhibit consistent commonality as well as individuality (derived from differences in the inner 4f orbital electrons). Therefore, by adopting the element with the chemical property similar to that of yttrium as the material of the plasma-resistant coating, the plasma-resistant coating has better corrosion resistance compared with the yttrium-containing coating, and when the plasma-resistant coating is coated on the surface of the component body, the stability of the plasma environment in the reaction cavity can be maintained, so as to meet the requirement of advanced plasma etching process (5nm and below) on micro particles.
In one embodiment, the rare earth elements include: one or more of Ho, Er, Tm, Yb and Lu. Ho (holmium), Er (erbium), Tm (thulium), Yb (ytterbium), Lu (lutetium) and Y (yttrium) are called yttrium group rare earth or heavy rare earth elements. Ho, Er, Tm, Yb, Lu are in the sixth cycle third subgroup, with similar chemistry to yttrium.
Specifically, Lu is taken as an example to illustrate that Lu and Y have similar chemical properties. Yttrium in subgroup III of the fifth period and having an electronic structure of 4d15s2. Lu is in the third subgroup of the sixth period and has an electronic structure of 6s24f145d1Lu has a saturated 4f electronic structure, and the sixth periodic element has one more 4f orbital than the fifth periodic element, increasing the relative atomic mass. Since Lu has a saturated 4f orbital, it is better able to resist physical bombardment by plasma.
The atomic weight of yttrium is 89, the atomic weight of lutetium is 86, and the ionic radii of the two elements are very similar. The density is from 4.689g/cm of yttrium due to the obvious increase of relative atomic mass and almost unchanged ionic radius3Significantly increased to 9.85g/cm lutetium3. Thus, yttrium has a very similar chemical property to lutetium.
In one embodiment, the atomic percent ratio of the rare earth elements is greater than or equal to 10%. In specific application, the atomic percentage of the rare earth elements can be more than 10%. The higher the atomic percentage ratio, the more the rare earth element plays a role in the plasma-resistant coating, the less the generated tiny particles are, and the particle pollution generated in the plasma etching process of the plasma-resistant coating is reduced.
In one embodiment, the plasma resistant coating 400 has a densification of 90% to 100%. The plasma-resistant coating prepared by the processes of spraying and the like has higher porosity. The higher the porosity, the lower the plasma resistant densification. In a particular application, the plasma-resistant coating is limited to a densification of 90% to 100%, thereby obtaining a plasma-resistant coating 400 having a relatively low porosity.
Fig. 4 is a flow chart of forming a plasma-resistant coating on a component according to an embodiment of the present invention.
Referring to fig. 4, a method for forming a plasma-resistant coating on a component includes:
providing a target material; providing a part body, and enabling the part body to be arranged opposite to the target material;
and evaporating the target material, conveying the evaporated source molecular flow formed by evaporation to the surface of the part body, and forming a plasma-resistant coating on the surface of the part body. Therefore, the plasma-resistant coating is coated on the surface of the part body by using the method, so that the formed plasma-resistant coating can maintain the stability of the environment in the reaction cavity, and the requirement of an advanced plasma etching process on micro particles is met.
In one embodiment, a method of forming a plasma resistant coating for a component includes: at least one of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method. The coating methods can be used for coating the plasma-resistant coating on the surface of the part on the basis of the invention so as to avoid the part from being corroded by plasma.
Physical Vapor Deposition (PVD) is a method of vaporizing a coating material by Physical methods such as evaporation and sputtering, and depositing a film on the surface of a component. The PVD process is simple, environment-friendly, pollution-free, low in material consumption, uniform and compact in film forming and strong in binding force with the surface of a part.
An Atomic Layer Deposition (ALD) method is a thin film Deposition technology based on surface vapor phase chemical reaction, and plasma enhanced Atomic Layer Deposition is utilized to enable the formation method of the plasma-resistant coating to have the characteristics of low Deposition temperature, flexible process control, excellent thin film performance and the like. Materials that ALD can deposit include: oxides, nitrides, fluorides, etc., and their deposition parameters are highly controllable (thickness, composition, and structure).
Chemical Vapor Deposition (CVD) is a method of growing solid substances from a gas phase by using Chemical reaction, and usually CVD uses high temperature or other activation methods to prepare a desired film layer by means of Chemical reaction.
In one embodiment, the method further comprises: an auxiliary enhancement process comprising at least one of an auxiliary plasma, an ion beam, or a radio frequency electric field. In the chemical vapor deposition method, by introducing plasma and ion beam technology into the conventional chemical vapor deposition process, the chemical reaction does not fully follow the conventional thermodynamic principle, because the plasma has higher chemical activity and can realize the reaction at a much lower temperature than the conventional thermodynamic chemical reaction. Plasma-assisted chemical vapor deposition enables relatively uniform compositions to be obtained, and film formation quality and deposition rate are high.
In one embodiment, when the rare earth metal compound is an oxide or a fluoride, the number of the target is 1, and the material of the target is the same as that of the plasma-resistant coating. The rare earth metal element of the sixth period has saturated 4f orbital electrons, and when external electrons bombard the electrons of the rare earth metal element of the sixth period, the rare earth metal element of the sixth period has one more layer of 4f electron orbitals, so that the 4f electrons can shield the physical bombardment effect of the external electrons, the stable state of an atomic structure is maintained, and the energy lost by inelastic collision is reduced. Therefore, the rare earth metal element of the sixth period has a stronger physical bombardment resistance. The plasma resistant coating is first physically bombarded by plasma 100 and then chemically etched. The plasma-resistant coating has stronger physical properties due to the addition of the rare earth metal elements.
In one embodiment, when the rare earth metal compound is oxyfluoride, the target material comprises a rare earth oxide target material and a rare earth fluoride target material, the rare earth oxide target material is evaporated to form rare earth oxygen ions, the rare earth fluoride target material is evaporated to form rare earth fluoride ions, and the rare earth oxygen ions and the rare earth fluoride ions are subjected to chemical reaction to form rare earth oxyfluoride. In this way, a plasma-resistant coating having a plurality of compositions and a stable crystal structure gradient can be formed. In the specific application, according to the process gas in the plasma etching process, various targets can be selected to coat the part body with the plasma-resistant coating.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (13)
1. A component for use in a plasma reactor apparatus, the plasma reactor apparatus including a reaction chamber having a plasma environment therein, the component being exposed to the plasma environment, the component comprising:
a component body;
the plasma-resistant coating is a rare earth metal compound, the rare earth metal compound comprises at least one of oxide, fluoride or oxyfluoride of rare earth elements, the atomic radius of the rare earth elements in the rare earth metal compound is smaller than that of yttrium, and the relative atomic mass of the rare earth elements in the rare earth metal compound is larger than that of yttrium.
2. The component for use in a plasma reactor apparatus according to claim 1, wherein the rare earth element comprises: one or more of Ho, Er, Tm, Yb or Lu.
3. The component for use in a plasma reactor apparatus according to claim 1, wherein the rare earth element is 10% or more in atomic percentage.
4. The component for use in a plasma reaction apparatus according to any one of claims 1 to 3, wherein the plasma-resistant coating has a densification rate of 90% to 100%.
5. A plasma reaction apparatus, comprising:
the reaction chamber is internally provided with a plasma environment;
the component for use in a plasma reaction apparatus according to any one of claims 1 to 4, which is exposed to the plasma environment.
6. The plasma reactor apparatus of claim 5 wherein said plasma reactor apparatus is a capacitively coupled plasma reactor apparatus, said components comprising: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
7. The plasma reaction apparatus according to claim 5,
the plasma reaction device is an inductively coupled plasma reaction device;
the component parts include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
8. The plasma reactor of claim 5 wherein the process depth-to-width ratio of the plasma reactor ranges from 200:1 to 10: 1.
9. A method of forming a plasma resistant coating for a component part according to any one of claims 1 to 4, comprising:
providing a target material;
providing a part body, and enabling the part body to be arranged opposite to the target;
and evaporating the target material, so that the evaporated source molecular flow formed by evaporation is conveyed to the surface of the part body, and the plasma-resistant coating is formed on the surface of the part body.
10. The method of forming a plasma resistant coating for a component part of claim 9, comprising: at least one of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method.
11. The method of forming a plasma resistant coating for a component part of claim 10 further comprising: auxiliary enhancement treatment; the auxiliary enhancement treatment includes at least one of auxiliary plasma, ion beam, or radio frequency electric field.
12. The method of forming a plasma-resistant coating on a component part according to claim 9, wherein when the rare earth metal compound is an oxide or a fluoride, the number of the target is 1, and the material of the target is the same as that of the plasma-resistant coating.
13. The method of forming a plasma-resistant coating for a component part of claim 9, wherein when the rare earth metal compound is an oxyfluoride, the targets comprise a rare earth oxide target and a rare earth fluoride target, evaporating the rare earth oxide target forms rare earth oxygen ions, evaporating the rare earth fluoride target forms rare earth fluoride ions, and the rare earth oxygen ions chemically react with the rare earth fluoride ions to form rare earth oxyfluorides.
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