CN213340283U - Semiconductor component and plasma processing apparatus - Google Patents
Semiconductor component and plasma processing apparatus Download PDFInfo
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- CN213340283U CN213340283U CN202021575869.6U CN202021575869U CN213340283U CN 213340283 U CN213340283 U CN 213340283U CN 202021575869 U CN202021575869 U CN 202021575869U CN 213340283 U CN213340283 U CN 213340283U
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Abstract
A semiconductor component and a plasma processing apparatus, wherein the semiconductor component comprises: a semiconductor component body; the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase. The semiconductor component can reduce the particle pollution problem when being applied to advanced manufacturing processes.
Description
Technical Field
The utility model relates to a semiconductor field especially relates to a semiconductor spare part and plasma processing apparatus.
Background
Plasma etch processes play a critical role in the field of integrated circuit manufacturing. The number of the latest plasma etching process steps in the 5nm process is increased to more than 17%. The power and steps of the advanced etching process are greatly improved, parts in the plasma etching chamber are required to have higher plasma physical bombardment and chemical corrosion resistance, fewer micro particle pollution and metal pollution sources are generated, and the stability and repeatability of the etching equipment process are further ensured.
Currently, in the process of 5nm or 3nm and below, there are severe particle contamination requirements, except that in the whole life cycle of the component, less than 10 particles with particle size of 28nm are required, and the smaller the sticking rate is, the better the probability of 0@28nm particles is, the better the sticking rate is. In order to meet the continuously shrinking line width requirement, the power and steps adopted in the plasma etching process technology are greatly improved. The existing coating layer gradually fails in the advanced process (5nm and below), and has micro particle pollution, so that the requirement of the advanced process cannot be well met.
Disclosure of Invention
The utility model provides a technical problem provide a semiconductor spare part and plasma processing apparatus to carry the in-process reduction particle pollution earlier.
In order to solve the above technical problem, the utility model provides a semiconductor component, include: a semiconductor component body; the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase.
Optionally, the corrosion-resistant coating is of a crystalline structure.
Optionally, the rare earth element of the rare earth oxyfluoride of the corrosion-resistant coating includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
Alternatively, the crystalline phase of the same layer is the same as the rare earth element of the amorphous phase.
Optionally, the crystalline phase of the same layer is different from the amorphous phase of the rare earth element.
Optionally, the thickness of the corrosion-resistant coating is 0.01 to 200 microns.
Optionally, the amorphous phase is at the surface of the crystalline phase and in the bulk of the crystalline phase.
Optionally, the material of the semiconductor component body includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramics, and the like.
Optionally, the density of the corrosion-resistant coating is 98% -100%.
Correspondingly, the utility model also provides a plasma processing apparatus, include: a reaction chamber, wherein a plasma environment is arranged in the reaction chamber; the semiconductor parts are positioned in the reaction cavity and exposed to the plasma environment.
Optionally, the plasma ambient includes at least one of fluorine, chlorine, or oxygen.
Optionally, the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
Optionally, when the plasma etching apparatus is an inductively coupled plasma etching apparatus, the components and parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulation ring, and a plasma confinement device.
Optionally, when the plasma etching apparatus is a capacitive coupling plasma etching apparatus, the component includes: at least one of a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, a lifting isolation ring or a plasma confinement device.
Optionally, the reaction chamber further includes: the base is used for bearing a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; the semiconductor parts are multiple and are respectively positioned at the top of the reaction cavity, the side wall of the reaction cavity and the periphery of the base, and the size relation of fluorine content in the corrosion-resistant coating of the semiconductor parts at different positions is as follows: the fluorine content in the corrosion-resistant coating of the semiconductor part on the top of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity, and the fluorine content in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the periphery of the base.
Compared with the prior art, the utility model discloses technical scheme has following beneficial effect:
in the semiconductor part provided by the technical scheme of the utility model, the surface of the semiconductor part body is provided with the corrosion-resistant coating, and the crystalline phase in the corrosion-resistant coating is used for ensuring that the corrosion-resistant coating has better stability; the amorphous phase has the network structure characteristic of long-range disorder, so that the amorphous phase can bear larger internal stress compared with the crystalline phase, and the same layer has both the crystalline phase and the amorphous phase, thereby reducing the internal stress of the corrosion-resistant coating and being beneficial to improving the service time of the corrosion-resistant coating; further, on the premise of keeping the stable crystal structure of the whole corrosion-resistant coating, the F content in the corrosion-resistant coating is regulated and controlled by the amorphous phase, parts coated by coatings with different F contents can be further designed according to the strength of F plasma in the etching cavity, the risk that the coating is locally and preferentially corroded in the etching cavity to form micro particle pollutants is reduced, and the application level of the processing procedure is improved.
Drawings
FIG. 1 is a schematic structural view of a plasma processing apparatus according to the present invention;
fig. 2 is a schematic structural diagram of a semiconductor component according to the present invention;
FIG. 3 is a schematic diagram of the positions of various semiconductor components of the present invention in a reaction chamber;
fig. 4 is a schematic diagram of the apparatus for forming the corrosion-resistant coating by using the physical vapor deposition process chamber of the present invention.
Detailed Description
The utility model provides a semiconductor spare part, plasma processing apparatus and corrosion-resistant coating forming method, wherein, semiconductor spare part includes: a semiconductor component body; the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase. The semiconductor component can reduce particle contamination in the advanced process.
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
The utility model discloses a plasma processing apparatus is plasma etching device or plasma cleaning device, below with plasma etching device explains for inductively coupled plasma etching device.
Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Referring to fig. 1, the plasma reaction apparatus includes: a reaction chamber 109 in which a plasma environment is present; and a semiconductor component exposed to a plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base, wherein the base is used for bearing a substrate to be processed, and the plasma is used for processing the substrate to be processed. The plasma atmosphere contains at least one of fluorine, chlorine and oxygen, and the plasma is made to have strong corrosiveness, and in order to prevent the surface of the semiconductor part body from being corroded by the plasma, it is necessary to coat the surface of the semiconductor part body with a corrosion-resistant coating.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: a liner 101, a gas nozzle 102, an electrostatic chuck 103, a focus ring 104, an insulator ring 105, a cover ring 106, a semiconductor component body plasma confinement device 107, a ceramic cover plate 108, or a gas coupling flange (not shown). The surfaces of these components need to be coated with a corrosion resistant coating to prevent corrosion by the plasma.
In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: at least one of a spray header, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a covering ring, a lifting isolating ring or a semiconductor part body plasma restraining device. The surfaces of these components need to be coated with a corrosion resistant coating to prevent corrosion by the plasma.
The semiconductor components are explained in detail below:
referring to fig. 2, the semiconductor component 200 includes: a semiconductor component body 200 a; and the corrosion-resistant coating 200b is positioned on the surface of the semiconductor component body 200a and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, wherein the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase.
The material of the semiconductor component body 200a includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramic, or the like.
The corrosion-resistant coating 200b contains rare earth elements including at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
The corrosion-resistant coating 200b serves to protect the semiconductor component body 200a from the plasma. Specifically, although the corrosion-resistant coating 200b includes an amorphous phase and a crystalline phase, the corrosion-resistant coating 200b, as a whole, still has a crystalline structure, which is generally stable, and thus the performance of the corrosion-resistant coating 200b is stable. The amorphous phase is dispersed in the crystalline phase, and specifically, the amorphous phase has an amorphous phase on the surface and in the interior of the crystalline phase. The amorphous phase has a network phase and has the phase characteristic of long-range disorder, so that the amorphous phase can bear larger internal stress compared with the crystal phase, namely the amorphous phase can reduce the integral internal stress of the corrosion-resistant coating and can reduce the cracking and falling of the corrosion-resistant coating, thereby being beneficial to improving the service time of the corrosion-resistant coating. Further, on the premise of maintaining the crystalline phase of the overall corrosion-resistant coating stable, the F content in the amorphous phase control coating can be further increased compared with the YOF coating only having the crystalline phase, and the corrosion-resistant coating with high F content (or concentration gradient) can resist the diffusion of plasma on the coating surface and further chemical corrosion, and reduce the risk that the coating is locally preferentially corroded in the etching cavity to form micro-particle pollutants, namely: the corrosion-resistant coating 200b can withstand higher power and longer plasma erosion without particle contamination issues when applied to advanced processes (5nm and below).
In practical process application, the plasma intensities required by different process procedures are different, the content of fluorine in the corrosion-resistant coating 200b can be determined according to the strength of the plasma environment, and specifically, when the corrosion capability of the plasma environment is stronger, the content of fluorine in the corrosion-resistant coating 200b is improved; conversely, when the plasma environment is less corrosive, the fluorine content of the corrosion-resistant coating 200b need not be too high to meet the corrosion resistance requirement.
Referring to fig. 3, a bias power source is typically applied to the susceptor, and the bias power source is used to bombard charged particles in the plasma vertically towards the surface of the susceptor to process the substrate on the surface of the susceptor. Since the surface of the component around the susceptor is parallel to the surface of the substrate to be processed, the corrosion action of the corrosion-resistant coating around the susceptor is a chemical corrosion enhanced in physical action at a corrosion rate greater than that of the side wall and the ceiling of the reaction chamber, and therefore, the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate a) at the ceiling of the reaction chamber can be made smaller than that of the semiconductor component (substrate B) at the side wall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate B) at the side wall of the reaction chamber is made smaller than that of the semiconductor component (substrate C) at the periphery of the susceptor, that is: the corrosion-resistant coatings 200b on the surfaces of the semiconductor part bodies at different positions in the same reaction cavity have different fluorine contents, so that the semiconductor part bodies at different positions are not easily corroded by plasma, and the particle pollution problem in the reaction cavity is favorably reduced. Wherein the etching includes not only chemical etching but also physical bombardment.
In this embodiment, the density of the corrosion-resistant coating 200b is 98% to 100%, so that the corrosion-resistant coating 200b has a strong plasma corrosion resistance.
In this embodiment, the thickness of the corrosion-resistant coating 200b is: 0.01-200 microns.
In other embodiments, the corrosion-resistant coating may also be of other thicknesses.
In one embodiment, the crystalline phase of the same layer is different from the amorphous phase of the rare earth element, such as: the crystalline phase is yttrium oxyfluoride and the amorphous phase is cerium oxyfluoride, and the cerium oxyfluoride is used for improving the corrosion resistance of the corrosion-resistant coating 200b and reducing the particle pollution problem.
In another embodiment, the crystalline phase of the same layer is the same as the amorphous rare earth element, for example: the crystalline phase and the amorphous phase are both yttrium oxyfluoride, and the significance of the design is as follows: the amorphous and crystalline in the corrosion-resistant coating have the same constituent elements, and the atomic and molecular potential fields are relatively uniform, so that the corrosion-resistant coating can keep relatively low potential energy, the relative stability of the amorphous and crystalline phases is maintained, the stability of the corrosion-resistant coating 200b is relatively good, and the corrosion-resistant coating is not easy to drift.
Fig. 4 is a schematic diagram of the apparatus for forming the corrosion-resistant coating by using the physical vapor deposition process chamber of the present invention.
Referring to fig. 4, the pvd process chamber includes: a vacuum chamber 300; the rare earth fluorine target 302a, the rare earth oxygen target 302b and the semiconductor component body 301 are located in the vacuum chamber 300, and the rare earth fluorine target 302a and the rare earth oxygen target 302b are arranged opposite to the semiconductor component body 301.
In the embodiment, oxygen atoms in the process gas are mainly used for controlling and forming a crystalline phase, fluorine atoms are mainly used for controlling and forming an amorphous phase, and the ratio of the crystalline phase to the amorphous phase in the corrosion-resistant coating and the fluorine content in the corrosion-resistant coating can be regulated and controlled by regulating and controlling the fluorine/oxygen atom ratio in the process gas to be 3: 7-7: 3, so that the corrosion-resistant coating has better corrosion resistance, and the risk of particle pollution is favorably reduced. The ratio of fluorine to oxygen atoms in the process gas can be regulated and controlled to be between 3:7 and 4:6, or between 4:6 and 2:1, or between 2:1 and 7: 3.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention, and the scope of the present invention is defined by the appended claims.
Claims (12)
1. A semiconductor component, comprising:
a semiconductor component body;
the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase.
2. The semiconductor component of claim 1, wherein the corrosion-resistant coating is a crystalline structure.
3. The semiconductor component according to claim 1, wherein the same layer has a crystal phase identical to the amorphous phase of the rare earth element.
4. The semiconductor component of claim 1, wherein the same layer has a crystalline phase different from the amorphous phase of the rare earth element.
5. The semiconductor component of claim 1, wherein the corrosion-resistant coating has a thickness of 0.01 to 200 microns.
6. The semiconductor component according to claim 1, wherein the amorphous phase is located on a surface of the crystalline phase and in a bulk of the crystalline phase.
7. The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a density of 98% to 100%.
8. A plasma processing apparatus, comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the semiconductor component according to any one of claims 1 to 7, located in the reaction chamber and exposed to the plasma environment.
9. The plasma processing apparatus according to claim 8, wherein the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
10. The plasma processing apparatus as claimed in claim 9, wherein when the plasma etching apparatus is an inductively coupled plasma etching apparatus, the component parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
11. The plasma processing apparatus as claimed in claim 9, wherein when the plasma etching apparatus is a capacitively-coupled plasma etching apparatus, the parts include: at least one of a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, a lifting isolation ring or a plasma confinement device.
12. The plasma processing apparatus of claim 8, wherein the reaction chamber further comprises: the base is used for bearing a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; the semiconductor parts are multiple and are respectively positioned at the top of the reaction cavity, the side wall of the reaction cavity and the periphery of the base, and the fluorine content of the corrosion-resistant coating of the semiconductor parts at different positions has the size relationship that: the fluorine content in the corrosion-resistant coating of the semiconductor part on the top of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity, and the fluorine content in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the periphery of the base.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021575869.6U CN213340283U (en) | 2020-08-03 | 2020-08-03 | Semiconductor component and plasma processing apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202021575869.6U CN213340283U (en) | 2020-08-03 | 2020-08-03 | Semiconductor component and plasma processing apparatus |
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| CN213340283U true CN213340283U (en) | 2021-06-01 |
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