CN114068274A - Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating - Google Patents
Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating Download PDFInfo
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- CN114068274A CN114068274A CN202010765703.9A CN202010765703A CN114068274A CN 114068274 A CN114068274 A CN 114068274A CN 202010765703 A CN202010765703 A CN 202010765703A CN 114068274 A CN114068274 A CN 114068274A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 76
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 62
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 53
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 62
- 229910052731 fluorine Inorganic materials 0.000 claims description 62
- 239000011737 fluorine Substances 0.000 claims description 62
- 230000008569 process Effects 0.000 claims description 50
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- 238000006243 chemical reaction Methods 0.000 claims description 34
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- 238000005240 physical vapour deposition Methods 0.000 claims description 6
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- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
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- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
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- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
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- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
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- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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Abstract
A semiconductor component, a plasma processing apparatus, and a method of forming a corrosion-resistant coating, wherein the semiconductor component includes: a semiconductor component body; the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase. The semiconductor component can reduce the particle pollution problem when being applied to advanced manufacturing processes.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a semiconductor part, a plasma processing device and a corrosion-resistant coating forming method.
Background
Plasma etch processes play a critical role in the field of integrated circuit manufacturing. The number of the latest plasma etching process steps in the 5nm process is increased to more than 17%. The power and steps of the advanced etching process are greatly improved, parts in the plasma etching chamber are required to have higher plasma physical bombardment and chemical corrosion resistance, fewer micro particle pollution and metal pollution sources are generated, and the stability and repeatability of the etching equipment process are further ensured.
Currently, in the process of 5nm or 3nm and below, there are severe particle contamination requirements, except that in the whole life cycle of the component, less than 10 particles with particle size of 28nm are required, and the smaller the sticking rate is, the better the probability of 0@28nm particles is, the better the sticking rate is. In order to meet the continuously shrinking line width requirement, the power and steps adopted in the plasma etching process technology are greatly improved. The existing coating layer gradually fails in the advanced process (5nm and below), and has micro particle pollution, so that the requirement of the advanced process cannot be well met.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a semiconductor part, a plasma processing device and a corrosion-resistant coating forming method, so as to reduce particle pollution in an advanced process.
To solve the above technical problem, the present invention provides a semiconductor component, comprising: a semiconductor component body; the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase.
Optionally, the corrosion-resistant coating is of a crystalline structure.
Optionally, the rare earth element of the rare earth oxyfluoride of the corrosion-resistant coating includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
Alternatively, the crystalline phase of the same layer is the same as the rare earth element of the amorphous phase.
Optionally, the crystalline phase of the same layer is different from the amorphous phase of the rare earth element.
Optionally, the thickness of the corrosion-resistant coating is 0.01 to 200 microns.
Optionally, the amorphous phase is at the surface of the crystalline phase and in the bulk of the crystalline phase.
Optionally, the material of the semiconductor component body includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramics, and the like.
Optionally, the density of the corrosion-resistant coating is 98% -100%.
Accordingly, the present invention also provides a plasma processing apparatus comprising: a reaction chamber, wherein a plasma environment is arranged in the reaction chamber; the semiconductor parts are positioned in the reaction cavity and exposed to the plasma environment.
Optionally, the plasma ambient includes at least one of fluorine, chlorine, or oxygen.
Optionally, the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
Optionally, when the plasma etching apparatus is an inductively coupled plasma etching apparatus, the components and parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulation ring, and a plasma confinement device.
Optionally, when the plasma etching apparatus is a capacitive coupling plasma etching apparatus, the component includes: at least one of a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, a lifting isolation ring or a plasma confinement device.
Optionally, the reaction chamber further includes: the base is used for bearing a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; the semiconductor parts are multiple and are respectively positioned at the top of the reaction cavity, the side wall of the reaction cavity and the periphery of the base, and the size relation of fluorine content in the corrosion-resistant coating of the semiconductor parts at different positions is as follows: the fluorine content in the corrosion-resistant coating of the semiconductor part on the top of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity, and the fluorine content in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the periphery of the base.
Accordingly, the present invention also provides a method of forming a corrosion-resistant coating on a semiconductor component body, comprising: providing a semiconductor component body; the corrosion-resistant coating is formed on the semiconductor component body.
Optionally, the method for forming the corrosion-resistant coating includes: placing the semiconductor part body in a vacuum chamber; arranging the rare earth fluorine-containing target material and the rare earth oxygen-containing target material opposite to the semiconductor part body; after the rare earth fluorine-containing target material and the rare earth oxygen-containing target material are arranged opposite to the semiconductor part body, the semiconductor part body is heated, the target material is excited to form molecular flow, fluorine-containing and oxygen-containing process gas is introduced into the vacuum reaction cavity, and the molecular flow and the process gas form a corrosion-resistant coating consisting of a crystalline phase and an amorphous phase on the surface of the semiconductor part body.
Optionally, the atomic ratio of the fluorine-containing process gas to the oxygen-containing process gas is adjusted to be 3: 7-7: 3.
Optionally, the distance between the rare earth fluorine target material and the rare earth oxygen target material and the height from the rare earth fluorine target material and the rare earth oxygen target material to the semiconductor part body are set to be 1: 1-1: 20; the range of the height is: 10 cm-2 m.
Optionally, the excitation power ratio of the fluorine-containing target material to the oxygen-containing target material is regulated to be 1: 1-1: 20.
Optionally, the amorphous phase is used to adjust the fluorine content in the corrosion-resistant coating.
Optionally, the atomic percentage content of fluorine in the corrosion-resistant coating is: 5 to 90 percent.
Optionally, the formation process of the corrosion-resistant coating includes: at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.
Optionally, the method further includes: carrying out enhancement treatment on the plasma by using an auxiliary enhancement source; the auxiliary enhancement source includes: at least one of a plasma source, an ion beam source, a microwave source, and a radio frequency source.
Compared with the prior art, the technical scheme of the embodiment of the invention has the following beneficial effects:
in the semiconductor part provided by the technical scheme of the invention, the surface of the semiconductor part body is provided with the corrosion-resistant coating, and the crystalline phase in the corrosion-resistant coating is used for enabling the corrosion-resistant coating to have better stability; the amorphous phase has the network structure characteristic of long-range disorder, so that the amorphous phase can bear larger internal stress compared with the crystalline phase, and the same layer has both the crystalline phase and the amorphous phase, thereby reducing the internal stress of the corrosion-resistant coating and being beneficial to improving the service time of the corrosion-resistant coating; further, on the premise of keeping the stable crystal structure of the whole corrosion-resistant coating, the F content in the corrosion-resistant coating is regulated and controlled by the amorphous phase, parts coated by coatings with different F contents can be further designed according to the strength of F plasma in the etching cavity, the risk that the coating is locally and preferentially corroded in the etching cavity to form micro particle pollutants is reduced, and the application level of the processing procedure is improved.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic structural view of a semiconductor device according to the present invention;
FIG. 3 is a schematic illustration of the positioning of various semiconductor components of the present invention in a reaction chamber;
FIG. 4 is a flow chart of the process for forming a corrosion-resistant coating on the surface of the semiconductor component body according to the present invention;
FIG. 5 is a schematic view of an apparatus for forming a corrosion-resistant coating using a physical vapor deposition process according to the present invention.
Detailed Description
The technical scheme of the invention provides a semiconductor part, a plasma processing device and a method for forming a corrosion-resistant coating, wherein the semiconductor part comprises: a semiconductor component body; the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase. The semiconductor component can reduce particle contamination in the advanced process.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
The plasma processing apparatus of the present invention is a plasma etching apparatus or a plasma cleaning apparatus, and the following description will be given with the plasma etching apparatus being an inductively coupled plasma etching apparatus.
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention.
Referring to fig. 1, the plasma reaction apparatus includes: a reaction chamber 109 in which a plasma environment is present; and a semiconductor component exposed to a plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base, wherein the base is used for bearing a substrate to be processed, and the plasma is used for processing the substrate to be processed. The plasma atmosphere contains at least one of fluorine, chlorine and oxygen, and the plasma is made to have strong corrosiveness, and in order to prevent the surface of the semiconductor part body from being corroded by the plasma, it is necessary to coat the surface of the semiconductor part body with a corrosion-resistant coating.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: a liner 101, a gas nozzle 102, an electrostatic chuck 103, a focus ring 104, an insulator ring 105, a cover ring 106, a semiconductor component body plasma confinement device 107, a ceramic cover plate 108, or a gas coupling flange (not shown). The surfaces of these components need to be coated with a corrosion resistant coating to prevent corrosion by the plasma.
In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: at least one of a spray header, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a covering ring, a lifting isolating ring or a semiconductor part body plasma restraining device. The surfaces of these components need to be coated with a corrosion resistant coating to prevent corrosion by the plasma.
The semiconductor components are explained in detail below:
referring to fig. 2, the semiconductor component 200 includes: a semiconductor component body 200 a; and the corrosion-resistant coating 200b is positioned on the surface of the semiconductor component body 200a and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, wherein the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase.
The material of the semiconductor component body 200a includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramic, or the like.
The corrosion-resistant coating 200b contains rare earth elements including at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
The corrosion-resistant coating 200b serves to protect the semiconductor component body 200a from the plasma. Specifically, although the corrosion-resistant coating 200b includes an amorphous phase and a crystalline phase, the corrosion-resistant coating 200b, as a whole, still has a crystalline structure, which is generally stable, and thus the performance of the corrosion-resistant coating 200b is stable. The amorphous phase is dispersed in the crystalline phase, and specifically, the amorphous phase has an amorphous phase on the surface and in the interior of the crystalline phase. The amorphous phase has a network phase and has the phase characteristic of long-range disorder, so that the amorphous phase can bear larger internal stress compared with the crystal phase, namely the amorphous phase can reduce the integral internal stress of the corrosion-resistant coating and can reduce the cracking and falling of the corrosion-resistant coating, thereby being beneficial to improving the service time of the corrosion-resistant coating. Further, on the premise of maintaining the crystalline phase of the overall corrosion-resistant coating stable, the F content in the amorphous phase control coating can be further increased compared with the YOF coating only having the crystalline phase, and the corrosion-resistant coating with high F content (or concentration gradient) can resist the diffusion of plasma on the coating surface and further chemical corrosion, and reduce the risk that the coating is locally preferentially corroded in the etching cavity to form micro-particle pollutants, namely: the corrosion-resistant coating 200b can withstand higher power and longer plasma erosion without particle contamination issues when applied to advanced processes (5nm and below).
In practical process application, the plasma intensities required by different process procedures are different, the content of fluorine in the corrosion-resistant coating 200b can be determined according to the strength of the plasma environment, and specifically, when the corrosion capability of the plasma environment is stronger, the content of fluorine in the corrosion-resistant coating 200b is improved; conversely, when the plasma environment is less corrosive, the fluorine content of the corrosion-resistant coating 200b need not be too high to meet the corrosion resistance requirement.
Referring to fig. 3, a bias power source is typically applied to the susceptor, and the bias power source is used to bombard charged particles in the plasma vertically towards the surface of the susceptor to process the substrate on the surface of the susceptor. Since the surface of the component around the susceptor is parallel to the surface of the substrate to be processed, the corrosion action of the corrosion-resistant coating around the susceptor is a chemical corrosion enhanced in physical action at a corrosion rate greater than that of the side wall and the ceiling of the reaction chamber, and therefore, the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate a) at the ceiling of the reaction chamber can be made smaller than that of the semiconductor component (substrate B) at the side wall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate B) at the side wall of the reaction chamber is made smaller than that of the semiconductor component (substrate C) at the periphery of the susceptor, that is: the corrosion-resistant coatings 200b on the surfaces of the semiconductor part bodies at different positions in the same reaction cavity have different fluorine contents, so that the semiconductor part bodies at different positions are not easily corroded by plasma, and the particle pollution problem in the reaction cavity is favorably reduced. Wherein the etching includes not only chemical etching but also physical bombardment.
In this embodiment, the density of the corrosion-resistant coating 200b is 98% to 100%, so that the corrosion-resistant coating 200b has a strong plasma corrosion resistance.
In this embodiment, the thickness of the corrosion-resistant coating 200b is: 0.01-200 microns.
In other embodiments, the corrosion-resistant coating may also be of other thicknesses.
In one embodiment, the crystalline phase of the same layer is different from the amorphous phase of the rare earth element, such as: the crystalline phase is yttrium oxyfluoride and the amorphous phase is cerium oxyfluoride, and the cerium oxyfluoride is used for improving the corrosion resistance of the corrosion-resistant coating 200b and reducing the particle pollution problem.
In another embodiment, the crystalline phase of the same layer is the same as the amorphous rare earth element, for example: the crystalline phase and the amorphous phase are both yttrium oxyfluoride, and the significance of the design is as follows: the amorphous and crystalline in the corrosion-resistant coating have the same constituent elements, and the atomic and molecular potential fields are relatively uniform, so that the corrosion-resistant coating can keep relatively low potential energy, the relative stability of the amorphous and crystalline phases is maintained, the stability of the corrosion-resistant coating 200b is relatively good, and the corrosion-resistant coating is not easy to drift.
Accordingly, the present invention also provides a method of forming a corrosion-resistant coating on a semiconductor component body, please refer to fig. 4.
FIG. 4 is a process flow diagram of the present invention for forming a corrosion-resistant coating on a surface of a semiconductor component body.
Referring to fig. 4, step S1: providing a semiconductor component body; step S2: the corrosion-resistant coating is formed on the semiconductor component body.
The forming process of the corrosion-resistant coating comprises the following steps: at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.
Further comprising: carrying out enhancement treatment on the plasma by using an auxiliary enhancement source; the auxiliary enhancement source includes: at least one of a plasma source, an ion beam source, a microwave source, and a radio frequency source.
The corrosion-resistant coating is formed by a physical vapor deposition process as an example and is schematically illustrated as follows:
FIG. 5 is a schematic view of an apparatus for forming a corrosion-resistant coating using a physical vapor deposition process according to the present invention.
Referring to fig. 5, a vacuum chamber 300; the rare earth fluorine target 302a, the rare earth oxygen target 302b and the semiconductor component body 301 are located in the vacuum chamber 300, and the rare earth fluorine target 302a and the rare earth oxygen target 302b are arranged opposite to the semiconductor component body 301.
In one embodiment, the method of forming the corrosion-resistant coating 303 comprises: placing the semiconductor component body 301 in a vacuum chamber; the rare earth fluorine target 302a and the rare earth oxygen target 302b are disposed opposite to the semiconductor component body 301; after the rare earth fluorine target 302a and the rare earth oxygen target 302b are arranged opposite to the semiconductor component body 301, the semiconductor component body 301 is heated, the rare earth fluorine target 302a and the rare earth oxygen target 302b are excited to form molecular flow, and fluorine-containing and oxygen-containing process gas is introduced into the vacuum chamber 300, wherein the molecular flow and the process gas form a crystalline and amorphous corrosion-resistant coating 303 on the surface of the semiconductor component body 301.
In the embodiment, oxygen atoms in the process gas are mainly used for controlling and forming a crystalline phase, fluorine atoms are mainly used for controlling and forming an amorphous phase, and the ratio of the crystalline phase to the amorphous phase in the corrosion-resistant coating and the fluorine content in the corrosion-resistant coating can be regulated and controlled by regulating and controlling the fluorine/oxygen atom ratio in the process gas to be 3: 7-7: 3, so that the corrosion-resistant coating has better corrosion resistance, and the risk of particle pollution is favorably reduced. The ratio of fluorine to oxygen atoms in the process gas can be regulated and controlled to be between 3:7 and 4:6, or between 4:6 and 2:1, or between 2:1 and 7: 3.
In another embodiment, a method of forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in a vacuum chamber 300; setting a rare earth fluorine-containing target 302a and a rare earth oxygen-containing target 302b, wherein the rare earth fluorine target 302a and the rare earth oxygen target 302b are arranged opposite to the semiconductor part body 301, the distance between the rare earth fluorine target 302a and the rare earth oxygen target 302b is d, the height from the rare earth fluorine target 302a and the rare earth oxygen target 302b to the semiconductor part body is h, and setting d: h is between 1:1 and 1: 20; after the distance d and the height h are set, the semiconductor part body is heated, the rare earth fluorine target 302a and the rare earth oxygen target 302b are excited to form molecular flow, fluorine-containing and oxygen-containing process gas is introduced, and the molecular flow and the process gas form a corrosion-resistant coating 303 consisting of a crystalline phase and an amorphous phase on the surface of the semiconductor part body 301.
Wherein, d: h can also be set between 1:1 and 1:8, or between 1:8 and 1:15, or between 1:15 and 1: 20.
D is set according to actual process requirements: h-value, the ratio of crystalline and amorphous phases in the corrosion-resistant coating 303 can be adjusted because: the molecular flow excitation power of the fluorine-containing target 302a after excitation is lower than that of the oxygen-containing target 302b, and the higher the height h, the longer the movement time of the fluorine-containing molecular flow, the more rapid the excitation power is lost by radiation, and thus the more amorphous phase is formed in the coating. By adjusting the proportion of the crystalline phase and the amorphous phase in the corrosion-resistant coating, the corrosion-resistant coating has good corrosion resistance and is beneficial to reducing the risk of particle pollution.
In this embodiment, the range of the height h is: 10 cm to 2 m, said height h being chosen in the sense that: if the height h is less than 10 cm, the formed corrosion-resistant coating only has crystalline phase and does not have amorphous phase, so that the corrosion resistance of the corrosion-resistant coating is poor; if the height h is greater than 2 m, only an amorphous phase and no crystalline phase are formed in the formed corrosion-resistant coating, so that the stability of the corrosion-resistant coating is poor. The height h may also be set in the range: 10 cm-80 cm, or 80 cm-1.2 m, or 1.2 m-2 m.
In yet another embodiment, a method of forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in a vacuum chamber 300; arranging a rare earth fluorine-containing target 302a and a rare earth oxygen-containing target 302b, enabling the rare earth fluorine-containing target 302a and the rare earth oxygen-containing target 302b to be arranged opposite to the semiconductor part body 301, and adjusting the excitation power of the rare earth fluorine-containing target 302a and the rare earth oxygen-containing target 302 b; after the excitation power of the rare earth fluorine target 302a and the rare earth oxygen-containing target 302b is adjusted, the semiconductor part body is heated, the rare earth fluorine target 302a and the rare earth oxygen-containing target 302b are excited to form molecular flow, fluorine-containing and oxygen-containing process gas is introduced, and the molecular flow and the process gas form a corrosion-resistant coating consisting of a crystalline phase and an amorphous phase on the surface of the semiconductor part body.
The excitation powers P1 and P2 of the fluorine-containing target 302a and the oxygen-containing target 302b are regulated according to the actual process requirements, so that the fluorine/oxygen ratio in the molecular flow is regulated, and the ratio of the crystalline phase and the amorphous phase in the formed coating is controlled. Wherein, the ratio P1 of P1 and P2: p2 is between 1:1 and 1:20, so that the corrosion-resistant coating has good corrosion resistance and is beneficial to reducing the risk of particle pollution. The ratio of P1 to P2 can also be 1: 1-1: 7, or 1: 7-1: 13, or 1: 13-1: 20. It should be noted that the power required for the fluorine-containing target 302a to excite fluorine is low, and the power required for the oxygen-containing target 302b to excite oxygen is high.
The amorphous phase is used for adjusting the content of fluorine in the corrosion-resistant coating 303 to meet the requirements of different processes or different positions, so that the corrosion-resistant coating 303 has stronger corrosion resistance, and the particle pollution problem is favorably reduced. In this embodiment, the fluorine content in the corrosion-resistant coating 303 is: 5 to 90 percent. The content of fluorine in the corrosion-resistant coating is as follows: 5% -34%, 34% -50%, 50% -80%, or 80% -100%.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (24)
1. A semiconductor component, comprising:
a semiconductor component body;
the corrosion-resistant coating is positioned on the surface of the semiconductor part body and consists of a crystalline phase and an amorphous phase of rare earth oxyfluoride, the crystalline phase and the amorphous phase are positioned in the same layer, and the amorphous phase is dispersed in the crystalline phase.
2. The semiconductor component of claim 1, wherein the corrosion-resistant coating is a crystalline structure.
3. The semiconductor component of claim 1, wherein the rare earth element of the corrosion resistant coating rare earth oxyfluoride comprises at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
4. The semiconductor component according to claim 3, wherein the same layer has a crystal phase identical to the amorphous phase of the rare earth element.
5. The semiconductor component according to claim 3, wherein the same layer has a crystalline phase different from the amorphous phase of the rare earth element.
6. The semiconductor component of claim 1, wherein the corrosion-resistant coating has a thickness of 0.01 to 200 microns.
7. The semiconductor component according to claim 1, wherein the amorphous phase is located on a surface of the crystalline phase and in a bulk of the crystalline phase.
8. The semiconductor component part of claim 1, wherein the material of the semiconductor component part body comprises: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramic, or the like.
9. The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a density of 98% to 100%.
10. A plasma processing apparatus, comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the semiconductor component according to any one of claims 1 to 9, located in the reaction chamber and exposed to the plasma environment.
11. The plasma processing apparatus of claim 10, wherein the plasma ambient comprises at least one of fluorine, chlorine, or oxygen.
12. The plasma processing apparatus according to claim 10, wherein the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
13. The plasma processing apparatus as claimed in claim 12, wherein when the plasma etching apparatus is an inductively coupled plasma etching apparatus, the component parts include: at least one of a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device.
14. The plasma processing apparatus as claimed in claim 12, wherein when the plasma etching apparatus is a capacitively-coupled plasma etching apparatus, the component parts include: at least one of a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, a lower grounding ring, a covering ring, a focusing ring, an insulating ring, a lifting isolation ring or a plasma confinement device.
15. The plasma processing apparatus of claim 10, wherein the reaction chamber further comprises: the base is used for bearing a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; the semiconductor parts are multiple and are respectively positioned at the top of the reaction cavity, the side wall of the reaction cavity and the periphery of the base, and the fluorine content of the corrosion-resistant coating of the semiconductor parts at different positions has the size relationship that: the fluorine content in the corrosion-resistant coating of the semiconductor part on the top of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity, and the fluorine content in the corrosion-resistant coating of the semiconductor part on the side wall of the reaction cavity is less than that in the corrosion-resistant coating of the semiconductor part on the periphery of the base.
16. A method of forming a corrosion-resistant coating on a semiconductor component body, comprising:
providing a semiconductor component body;
forming a corrosion-resistant coating according to any one of claims 1 to 9 on the semiconductor component body.
17. The method of forming a corrosion-resistant coating according to claim 16, wherein the method of forming the corrosion-resistant coating comprises: placing the semiconductor part body in a vacuum chamber; arranging the rare earth fluorine-containing target material and the rare earth oxygen-containing target material opposite to the semiconductor part body; after the rare earth fluorine-containing target material and the rare earth oxygen-containing target material are arranged opposite to the semiconductor part body, the semiconductor part body is heated, the target material is excited to form molecular flow, fluorine-containing and oxygen-containing process gas is introduced into the vacuum reaction cavity, and the molecular flow and the process gas form a corrosion-resistant coating consisting of a crystalline phase and an amorphous phase on the surface of the semiconductor part body.
18. The method of forming a corrosion resistant coating according to claim 17, wherein the atomic ratio of the fluorine-containing and oxygen-containing process gas is adjusted to be 3:7 to 7: 3.
19. The method for forming a corrosion-resistant coating according to claim 17, wherein the distance between the rare earth fluorine target and the rare earth oxygen target and the height from the rare earth fluorine target and the rare earth oxygen target to the semiconductor component body are set to be 1: 1-1: 20; the range of the height is: 10 cm-2 m.
20. The method of forming a corrosion-resistant coating according to claim 17, wherein the excitation power ratio of the fluorine-containing target material to the oxygen-containing target material is controlled to be 1:1 to 1: 20.
21. The method of forming a corrosion-resistant coating according to claim 16, wherein the amorphous phase is used to adjust the fluorine content of the corrosion-resistant coating.
22. The method of forming a corrosion-resistant coating according to claim 16, wherein the corrosion-resistant coating has a fluorine content in atomic percent of: 5 to 90 percent.
23. The method of forming a corrosion-resistant coating according to claim 16, wherein the process of forming the corrosion-resistant coating comprises: at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.
24. The method of forming a corrosion-resistant coating of claim 23, further comprising: carrying out enhancement treatment on the plasma by using an auxiliary enhancement source; the auxiliary enhancement source includes: at least one of a plasma source, an ion beam source, a microwave source, and a radio frequency source.
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| TWI850088B (en) * | 2022-10-14 | 2024-07-21 | 大陸商中微半導體設備（上海）股份有限公司 | Device for forming corrosion resistant coating and method for forming corrosion resistant coating |
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| CN115637418B (en) * | 2022-10-12 | 2024-10-11 | 中微半导体设备(上海)股份有限公司 | Method for forming coating, coating device, component and plasma reaction device |
| CN115558988B (en) * | 2022-11-30 | 2023-03-24 | 中微半导体设备(上海)股份有限公司 | Method for forming coating, semiconductor component and plasma reaction device |
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| EP3283665A4 (en) * | 2015-04-15 | 2018-12-12 | Treadstone Technologies, Inc. | Method of metallic component surface moodification for electrochemical applications |
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| CN109075084A (en) * | 2016-05-03 | 2018-12-21 | 应用材料公司 | Sacrificial metal oxyfluoride coating |
| US20190078200A1 (en) * | 2017-09-08 | 2019-03-14 | Applied Materials, Inc. | Fluorinated rare earth oxide ald coating for chamber productivity enhancement |
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