TW202206624A - Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination - Google Patents

Abstract

A semiconductor component, a plasma processing device, and a method for forming a corrosion-resistant coating, wherein the semiconductor component comprises: a semiconductor component body; a corrosion-resistant coating located on the surface of the semiconductor component body and made of rare earth element fluorine The oxide is composed of a crystalline phase and an amorphous phase, and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase. The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination.

Description

Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating

The invention relates to the field of semiconductors, in particular to a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating.

The plasma etch process plays a key role in the field of integrated circuit manufacturing. In the latest 5nm process, the total number of plasma etching process steps has increased to more than 17%. The substantial increase in the power and steps of the advanced etching process requires the components in the plasma etching chamber to have higher resistance to plasma physical bombardment and chemical corrosion, resulting in fewer micro-particle pollution and metal pollution sources, which further protects the etching equipment. Process stability and repeatability.

At present, in the process of 5nm or 3nm and below, there are strict particle pollution requirements, in addition to the requirement of less than 10 particles smaller than 28nm in the whole life cycle of parts, and the smaller the ground contact ratio, the better, that is Probability of particles of 0@28nm. To meet ever-shrinking line width requirements, the power and steps used in the plasma etch process have increased dramatically. However, the current coating gradually fails in the advanced process (5nm and below), and there is contamination of tiny particles, which cannot well meet the needs of the advanced process.

The technical problem solved by the present invention is to provide a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, so as to reduce particle pollution in an advanced manufacturing process.

In order to solve the above technical problems, the present invention provides a semiconductor component, comprising: a semiconductor component body; a corrosion-resistant coating, located on the surface of the semiconductor component body, which is composed of a crystalline phase and an amorphous phase of rare earth oxyfluoride , and the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase.

Optionally, the corrosion-resistant coating has a crystalline structure.

Optionally, the rare earth element of the corrosion-resistant coating rare earth element oxyfluoride includes at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu A sort of.

Optionally, the crystal phase of the same layer is the same as the rare earth element of the amorphous phase.

Optionally, the rare earth elements of the crystalline phase and the amorphous phase of the same layer are different.

Optionally, the thickness of the corrosion-resistant coating is 0.01 micrometers to 200 micrometers.

Optionally, the amorphous phase is located on the surface of the crystalline phase and in the bulk of the crystalline phase.

Optionally, the material of the semiconductor component body includes: at least one of aluminum alloy, silicon carbide, silicon, quartz, ceramics, and the like.

Optionally, the density of the corrosion-resistant coating is 98% to 100%.

Correspondingly, the present invention also provides a plasma processing device, comprising: a reaction chamber, in which a plasma environment is formed; the above-mentioned semiconductor components are located in the reaction chamber and are exposed to the plasma environment.

Optionally, the plasma environment includes at least one of fluorine, chlorine or oxygen.

Optionally, the plasma processing device is a plasma etching device or a plasma cleaning device.

Optionally, when the plasma etching device is an inductively coupled plasma etching device, the components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe flange, an electrostatic chuck assembly, a cover ring , at least one of a focus ring, an insulating ring, and a plasma confinement device.

Optionally, when the plasma etching device is a capacitively coupled plasma etching device, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas buffer plate, an electrostatic chuck assembly, and a lower grounding ring , at least one of a cover ring, a focus ring, an insulating ring, a liftable isolation ring, or a plasma confinement device.

Optionally, the reaction chamber further includes: a base for carrying a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; there are multiple semiconductor components, which are respectively located in the reaction chamber The top of the chamber, the sidewall of the reaction chamber and the periphery of the base, the size relationship of the fluorine content in the corrosion-resistant coating of the semiconductor components at different positions is: the corrosion-resistant coating of the semiconductor components on the top of the reaction chamber The fluorine content is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the sidewall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor components on the sidewall of the reaction chamber is less than the fluorine content in the corrosion-resistant coating of the semiconductor components on the periphery of the base. Fluorine content in the layer.

Correspondingly, the present invention also provides a method for forming a corrosion-resistant coating on a semiconductor component body, comprising: providing a semiconductor component body; and forming the above-mentioned corrosion-resistant coating on the semiconductor component body.

Optionally, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body in a vacuum chamber; arranging the rare earth fluorine-containing target material and the rare earth oxygen-containing target material to be opposite to the semiconductor component body; making the rare earth fluorine-containing target material After the target material and the rare earth oxygen-containing target material and the semiconductor component body are set opposite to each other, the semiconductor component body is heated, the target material is excited to form a molecular flow, and a fluorine-containing and oxygen-containing process gas is introduced into the vacuum reaction chamber. and process gases to form a corrosion-resistant coating composed of crystalline and amorphous phases on the surface of the semiconductor component body.

Optionally, the atomic ratio of the fluorine-containing and oxygen-containing process gases is adjusted so that the atomic ratio of the fluorine-containing and oxygen-containing process gases is 3:7 to 7:3.

Optionally, the distance between the rare earth fluorine target material and the rare earth oxygen target material and the height of the rare earth fluorine target material and the rare earth oxygen target material to the semiconductor component body are set to be between 1:1 and 1:20; the height The range is: 10 cm to 2 meters.

Optionally, the excitation power ratio of the fluorine-containing target and the oxygen-containing target is adjusted to be between 1:1 and 1:20.

Optionally, the amorphous phase is used to adjust the fluorine content in the corrosion-resistant coating.

Optionally, the atomic percentage content of fluorine in the corrosion-resistant coating is 5% to 90%.

Optionally, the formation process of the corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.

Optionally, the method further includes: using an auxiliary enhancement source to perform enhancement treatment on the plasma; the auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

Compared with the prior art, the technical solutions of the embodiments of the present invention have the following beneficial effects:

In the semiconductor component provided by the technical solution of the present invention, the surface of the semiconductor component body has a corrosion-resistant coating, and the crystalline phase in the corrosion-resistant coating is used to make the corrosion-resistant coating have better stability; and The amorphous phase has the characteristics of long-range disordered network structure, so that the amorphous phase can withstand greater internal stress than the crystalline phase, and there are both crystalline and amorphous phases in the same layer, which reduces the corrosion resistance of the corrosion-resistant coating. The internal stress is beneficial to improve the service time of the corrosion-resistant coating; further, on the premise of maintaining the stable crystal structure of the overall corrosion-resistant coating, the amorphous phase can control the F content in the corrosion-resistant coating, which can be further adjusted according to the etching cavity. The strength design of F plasma has parts covered with different F content coatings, which reduces the risk of the coating being preferentially corroded locally in the etching chamber to form tiny particle contaminants, and improves the application level of the process.

The technical solution of the present invention provides a semiconductor component, a plasma processing device and a method for forming a corrosion-resistant coating, wherein the semiconductor component includes: a semiconductor component body; and a corrosion-resistant coating located on the surface of the semiconductor component body , which is composed of a crystal phase and an amorphous phase of rare earth oxyfluoride, and the crystal phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystal phase. The semiconductor components are capable of reducing particle contamination in advanced manufacturing processes.

In order to make the above objects, features and beneficial effects of the present invention more clearly understood, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

The plasma processing apparatus of the present invention is a plasma etching apparatus or a plasma cleaning apparatus, and the following description is made by taking the plasma etching apparatus as an inductively coupled plasma etching apparatus.

FIG. 1 is a schematic structural diagram of a plasma processing apparatus of the present invention.

Referring to FIG. 1 , the plasma reaction apparatus includes: a reaction chamber 109 , which is a plasma environment; and semiconductor components exposed to the plasma environment.

The plasma reaction device further includes: a base, where the base is used for carrying the substrate to be processed, and the plasma is used for processing the substrate to be processed. The plasma environment contains at least one of fluorine, chlorine and oxygen, which makes the plasma highly corrosive. The surface is coated with a corrosion-resistant coating.

In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Correspondingly, the semiconductor components exposed to the plasma environment include: a bushing 101, a gas nozzle 102, an electrostatic chuck 103, a focus ring 104, Insulation ring 105 , cover ring 106 , semiconductor component body plasma confinement device 107 , ceramic cover plate 108 or gas connection flange (not shown). The surfaces of these parts need to be coated with corrosion-resistant coatings to prevent plasma corrosion.

In specific applications, the plasma reaction device can also be a capacitively coupled plasma reaction device. Correspondingly, the parts exposed to the plasma environment include: shower head, gas distribution plate, upper ground ring, lower ground ring, and gas pipe At least one of a circuit, a focus ring, an insulating ring, an electrostatic chuck, a cover ring, a liftable isolation ring, or a plasma confinement device for a semiconductor component body. The surfaces of these parts need to be coated with corrosion-resistant coatings to prevent plasma corrosion.

The semiconductor components are described in detail below:

Referring to FIG. 2, a semiconductor component 200 includes: a semiconductor component body 200a; a corrosion-resistant coating 200b, located on the surface of the semiconductor component body 200a, is composed of a crystalline phase and an amorphous phase of rare earth oxyfluoride, and The crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase.

The material of the semiconductor component body 200a includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramics.

The corrosion-resistant coating 200b contains rare earth elements including at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.

The corrosion-resistant coating 200b is used to protect the semiconductor component body 200a and prevent the semiconductor component body 200a from being corroded by plasma. Specifically, although the corrosion-resistant coating 200b contains an amorphous phase and a crystalline phase, on the whole, the corrosion-resistant coating 200b still has a crystalline structure, and the crystalline structure is usually relatively stable. Therefore, the corrosion-resistant coating The performance of 200b is relatively stable. The amorphous phase is dispersed in the crystalline phase. Specifically, the amorphous phase has an amorphous phase on the surface and inside of the crystalline phase. Since the amorphous phase has a network phase and has long-range disordered phase characteristics, the amorphous phase can withstand greater internal stress than the crystalline phase, that is to say, the amorphous phase can reduce the overall corrosion resistance of the corrosion-resistant coating. The internal stress can reduce the crack and fall off of the corrosion-resistant coating, so it is beneficial to improve the service time of the corrosion-resistant coating. Further, under the premise of maintaining the stable crystalline phase of the overall corrosion-resistant coating, the amorphous phase modulates the F content in the coating. Compared with the YOF coating with only the crystalline phase, the corrosion-resistant coating composed of the crystalline phase and the amorphous phase is more stable. The F content in the coating can be further increased, and the corrosion-resistant coating with high F content (or concentration gradient) can resist the diffusion of plasma on the coating surface and further chemical corrosion, and reduce the local corrosion of the coating in the etching chamber. The risk of preferential corrosion to form fine particle contamination, that is: the corrosion-resistant coating 200b applied to advanced processes (5nm and below) can withstand higher power and longer plasma corrosion without generating particles pollution problem.

In the actual process application, the plasma intensity required by different processes is different, and the content of fluorine in the corrosion-resistant coating 200b can be determined according to the strength of the plasma environment. Specifically, when the plasma environment has strong corrosion ability , the content of fluorine in the corrosion-resistant coating 200b is increased; on the contrary, when the corrosion ability of the plasma environment is weak, the content of fluorine in the corrosion-resistant coating 200b does not need to be too high to satisfy the corrosion resistance requirements.

Referring to FIG. 3 , a bias power source is usually applied to the susceptor, and the bias power source is used to make the charged particles in the plasma bombard the surface of the susceptor vertically, so as to realize the treatment of the substrate to be treated on the surface of the susceptor . Since the surface of the parts around the base is parallel to the surface of the substrate to be processed, the corrosion effect of the corrosion-resistant coating around the base is chemical corrosion enhanced by physical action, and its corrosion rate is higher than that of the sidewall and top of the reaction chamber. Therefore, The fluorine content in the corrosion-resistant coating of the semiconductor component (substrate A) at the top of the reaction chamber can be made smaller than the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate B) on the sidewall of the reaction chamber, and the sidewall of the reaction chamber can be The fluorine content in the corrosion-resistant coating of the semiconductor component (substrate B) is less than the fluorine content in the corrosion-resistant coating of the semiconductor component (substrate C) on the periphery of the susceptor, that is, at different positions in the same reaction chamber The content of fluorine in the corrosion-resistant coating 200b on the surface of the semiconductor component body is different, so that the semiconductor component body at different positions is not easily corroded by plasma, which is beneficial to reduce the particle pollution problem in the reaction chamber. Wherein, the corrosion includes not only chemical corrosion but also physical bombardment.

In this embodiment, the density of the corrosion-resistant coating 200b is 98%-100%, so that the corrosion-resistant coating 200b has a strong ability to resist plasma corrosion.

In this embodiment, the thickness of the corrosion-resistant coating 200b is: 0.01 μm˜200 μm.

In other embodiments, the corrosion-resistant coating may also be of other thicknesses.

In an embodiment, the crystalline phase of the same layer is different from the rare earth element of the amorphous phase, for example, the crystalline phase is yttrium oxyfluoride, and the amorphous phase is cerium oxyfluoride, and the cerium oxyfluoride It is used to improve the corrosion resistance of the corrosion-resistant coating 200b and reduce the problem of particle contamination.

In another embodiment, the crystalline phase of the same layer is the same as the rare earth element of the amorphous phase, for example, both the crystalline phase and the amorphous phase are yttrium oxyfluoride. The significance of this design is: the corrosion-resistant coating The amorphous and crystalline layers in the layer have the same constituent elements, and the atomic and molecular potential fields are relatively uniform, so that the corrosion-resistant coating can maintain a relatively low potential energy, maintain the relative stability of the amorphous and crystalline phases, and make the corrosion-resistant coating relatively stable. 200b has better stability and is not prone to drift.

Correspondingly, the present invention also provides a method for forming a corrosion-resistant coating on a semiconductor component body, please refer to FIG. 4 .

4 is a flow chart of the process of forming a corrosion-resistant coating on the surface of the semiconductor component body according to the present invention.

Please refer to FIG. 4 , step S1 : providing a semiconductor component body; step S2 : forming the above-mentioned corrosion-resistant coating on the semiconductor component body.

The formation process of the corrosion-resistant coating includes at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process.

It also includes: using an auxiliary enhancement source to enhance the plasma; the auxiliary enhancement source includes at least one of a plasma source, an ion beam source, a microwave source and a radio frequency source.

The following is a schematic illustration of using the physical vapor deposition process to form the corrosion-resistant coating as an example:

FIG. 5 is a schematic diagram of an apparatus for forming a corrosion-resistant coating by using a physical vapor deposition process according to the present invention.

Please refer to FIG. 5, a vacuum chamber 300; rare earth fluorine target 302a, rare earth oxygen target 302b and semiconductor component body 301 are located in the vacuum chamber 300, and rare earth fluorine target 302a and rare earth oxygen target 302b are connected with The semiconductor component bodies 301 are disposed opposite to each other.

In one embodiment, the method for forming the corrosion-resistant coating 303 includes: placing the semiconductor component body 301 in a vacuum chamber; making the rare earth fluorine target 302a and the rare earth oxygen target 302b opposite to the semiconductor component body 301 ; After the rare earth fluorine target 302a and the rare earth oxygen target 302b and the semiconductor component body 301 are set opposite to each other, the semiconductor component body 301 is heated, and the rare earth fluorine target 302a and the rare earth oxygen target 302b are excited to form a molecular flow and flow to the vacuum chamber. A fluorine-containing and oxygen-containing process gas is introduced into the chamber 300 , and the molecular flow and the process gas form a crystalline and amorphous corrosion-resistant coating 303 on the surface of the semiconductor component body 301 .

In this embodiment, the oxygen atoms in the process gas are mainly used to control the formation of a crystalline phase, and the fluorine atoms are mainly used to control the formation of an amorphous phase. By adjusting the ratio of fluorine/oxygen atoms in the process gas to 3:7~7:3 In between, the ratio of crystalline phase and amorphous phase in the corrosion-resistant coating and the fluorine content in the corrosion-resistant coating can be adjusted, so that the corrosion-resistant coating has better corrosion resistance characteristics, which is beneficial to reduce the risk of particle pollution. The fluorine/oxygen atomic ratio in the process gas can also be adjusted between 3:7~4:6, or 4:6~2:1, or 2:1~7:3.

In another embodiment, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in the vacuum chamber 300; setting the rare earth fluorine-containing target 302a and the rare earth oxygen-containing target 302b, the rare earth fluorine target The rare earth fluorine target 302a and the rare earth oxygen target 302b are disposed opposite to the semiconductor component body 301, the distance between the rare earth fluorine target 302a and the rare earth oxygen target 302b is d, and the rare earth fluorine target 302a and the rare earth oxygen target 302b are connected to the semiconductor component. The height of the body is h, and d:h is set between 1:1 and 1:20; after setting the spacing d and the height h, the semiconductor component body is heated to excite the rare earth fluorine target 302a and the rare earth oxygen target 302b to form molecular flow , the process gas containing fluorine and oxygen is introduced, and the molecular flow and the process gas form a corrosion-resistant coating 303 composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body 301 .

Among them, d:h can also be set between 1:1~1:8 or 1:8~1:15 or 1:15~1:20.

The d:h value can be set according to the actual process requirements, and the ratio of the crystalline phase and the amorphous phase in the corrosion-resistant coating 303 can be adjusted. This is because the excitation power of the molecular flow after the fluorine-containing target 302a is excited is lower than that of the oxygen-containing target 302b The higher the height h, the longer the movement time of the fluorine-containing molecular flow, the more and faster the excitation power is lost through radiation, and the more amorphous phases are formed in the coating. By adjusting the ratio of crystalline phase and amorphous phase in the corrosion-resistant coating, the corrosion-resistant coating has good corrosion resistance, which is beneficial to reduce the risk of particle pollution.

In this embodiment, the range of the height h is: 10 cm to 2 m. The significance of selecting the height h is: if the height h is less than 10 cm, only the crystalline phase is formed in the corrosion-resistant coating. There is no amorphous phase, so that the corrosion resistance of the corrosion-resistant coating is poor; if the height h is greater than 2 meters, the formed corrosion-resistant coating has only an amorphous phase without a crystalline phase, which makes the corrosion-resistant coating stable. Poor sex. The range of the height h may also be set to be between 10 cm and 80 cm, or between 80 cm and 1.2 meters, or between 1.2 meters and 2 meters.

In yet another embodiment, the method for forming the corrosion-resistant coating includes: placing the semiconductor component body 301 in a vacuum chamber 300; setting a rare earth-containing fluorine target 302a and a rare-earth oxygen-containing target 302b, so that The rare earth fluorine target 302a and the rare earth oxygen-containing target 302b are arranged opposite to the semiconductor component body 301 to adjust the excitation power of the rare earth fluorine target 302a and the rare earth oxygen target 302b; adjust the rare earth fluorine target 302a and the rare earth After the excitation power of the oxygen-containing target 302b, the semiconductor component body is heated, and the rare-earth fluorine target 302a and the rare-earth oxygen-containing target 302b are excited to form a molecular flow, and the process gas containing fluorine and oxygen is introduced, and the molecular flow and the process gas are in the semiconductor. A corrosion-resistant coating composed of crystalline phase and amorphous phase is formed on the surface of the component body.

The excitation powers P1 and P2 of the fluorine-containing target 302a and the oxygen-containing target 302b are adjusted according to the actual process requirements, thereby adjusting the fluorine/oxygen ratio in the molecular flow, and controlling the ratio of crystalline phase and amorphous phase in the formed coating. Among them, the ratio of P1 and P2, P1:P2, is between 1:1 and 1:20, so that the corrosion-resistant coating has good corrosion resistance and is conducive to reducing the risk of particle pollution. The ratio of P1 to P2 may also be 1:1~1:7 or 1:7~1:13 or 1:13~1:20. It should be noted here that the power required for the fluorine-containing target 302a to excite fluorine is relatively low, and the power required for the oxygen-containing target 302b to excite oxygen is relatively high.

The amorphous phase is used to adjust the content of fluorine in the corrosion-resistant coating 303 to meet the needs of different processes or different locations, so that the corrosion-resistant coating 303 has strong corrosion resistance, which is beneficial to reduce particle pollution. In this embodiment, the content of fluorine in the corrosion-resistant coating 303 is 5% to 90%. The content of fluorine in the corrosion-resistant coating is: 5%-34% or 34%-50% or 50%-80% or 80%-100%.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be based on the scope defined by the scope of the patent application.

101: Bushing 102: Gas nozzle 103: Electrostatic chuck 104: Focus Ring 105: Insulation ring 106: Cover Ring 107: Plasma confinement device for semiconductor parts body 108: Ceramic cover 109: reaction chamber 200: Semiconductor Components 200a: body of semiconductor components 200b: Corrosion Resistant Coating 300: Vacuum Chamber 301: Semiconductor parts body 302a: Rare earth fluorine target 302b: Rare Earth Oxygen Target 303: Corrosion Resistant Coating d: spacing h: height S1, S2: Steps

1 is a schematic structural diagram of a plasma processing apparatus of the present invention; 2 is a schematic structural diagram of a semiconductor component of the present invention; Fig. 3 is the positional schematic diagram of different semiconductor components of the present invention in the reaction chamber; 4 is a process flow diagram of the present invention for forming a corrosion-resistant coating on the surface of a semiconductor component body; FIG. 5 is a schematic diagram of an apparatus for forming a corrosion-resistant coating by using a physical vapor deposition process according to the present invention.

S1: Step

S2: Step

Claims (24)

A semiconductor component, comprising: a semiconductor component body; and A corrosion-resistant coating, located on the surface of the semiconductor component body, is composed of a crystalline phase and an amorphous phase of rare earth oxyfluoride, wherein the crystalline phase and the amorphous phase are located in the same layer, and the amorphous phase is dispersed in the crystalline phase . The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a crystalline structure. The semiconductor component according to claim 1, wherein the rare earth elements of the corrosion-resistant coating rare earth element oxyfluoride include Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er At least one of , Tm, Yb or Lu. The semiconductor component according to claim 3, wherein the crystal phase and the amorphous phase of the same layer are the same rare earth elements. The semiconductor component according to claim 3, wherein the rare earth elements of the crystal phase and the amorphous phase of the same layer are different. The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a thickness of 0.01 micrometers to 200 micrometers. The semiconductor component of claim 1, wherein the amorphous phase is located on the surface of the crystalline phase and in the bulk of the crystalline phase. The semiconductor component according to claim 1, wherein the material of the semiconductor component body includes at least one of aluminum alloy, silicon carbide, silicon, quartz or ceramics. The semiconductor component according to claim 1, wherein the corrosion-resistant coating has a density of 98% to 100%. A plasma processing device, comprising: a reaction chamber within which is a plasma environment; and The semiconductor component according to any one of claim 1 to claim 9, located in the reaction chamber and exposed to the plasma environment. The plasma processing apparatus of claim 10, wherein the plasma environment contains at least one of fluorine, chlorine or oxygen. The plasma processing apparatus of claim 10, wherein the plasma processing apparatus is a plasma etching apparatus or a plasma cleaning apparatus. The plasma processing apparatus of claim 12, wherein, when the plasma etching apparatus is an inductively coupled plasma etching apparatus, the components include: a ceramic plate, an inner liner, a gas nozzle, a gas distribution plate, a gas pipe method at least one of a blue, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, or a plasma confinement device. The plasma processing apparatus according to claim 12, wherein, when the plasma etching apparatus is a capacitively coupled plasma etching apparatus, the components include: a shower head, an upper grounding ring, a moving ring, a gas distribution plate, a gas At least one of a buffer plate, an electrostatic chuck assembly, a lower ground ring, a cover ring, a focus ring, an insulating ring, a liftable isolation ring, or a plasma confinement device. The plasma processing apparatus according to claim 10, wherein the reaction chamber further comprises: a base for carrying a substrate to be processed, and the substrate to be processed is exposed to the plasma environment; the semiconductor component is A plurality of them are respectively located at the top of the reaction chamber, the sidewall of the reaction chamber and the periphery of the base. The magnitude relationship of the fluorine content in the corrosion-resistant coating of the semiconductor components at different positions is: the semiconductor at the top of the reaction chamber The fluorine content in the corrosion-resistant coating of the component is less than the fluorine content in the corrosion-resistant coating of the semiconductor component on the sidewall of the reaction chamber, and the fluorine content in the corrosion-resistant coating of the semiconductor component on the sidewall of the reaction chamber is less than that of the base. The fluorine content in the corrosion-resistant coating of the semiconductor component on the periphery of the seat. A method of forming a corrosion-resistant coating on a semiconductor component body, comprising: providing a semiconductor component body; A corrosion-resistant coating as described in any one of Claims 1 to 9 is formed on the semiconductor component body. The method for forming a corrosion-resistant coating according to claim 16, wherein the method for forming the corrosion-resistant coating comprises: placing the semiconductor component body in a vacuum chamber; After the rare earth-containing fluorine target and the rare earth oxygen-containing target are arranged opposite to the semiconductor component body, the semiconductor component body is heated to stimulate the target to form molecular flow and react to the vacuum A process gas containing fluorine and oxygen is introduced into the cavity, and the molecular flow and the process gas form a corrosion-resistant coating composed of a crystalline phase and an amorphous phase on the surface of the semiconductor component body. The method for forming a corrosion-resistant coating according to claim 17, wherein the atomic ratio of the fluorine-containing and oxygen-containing process gases is adjusted so that the atomic ratio of the fluorine-containing and oxygen-containing process gases is 3:7 to 7:3. The method for forming a corrosion-resistant coating according to claim 17, wherein the distance between the rare-earth fluorine target and the rare-earth oxygen target is set at a height of 1 from the rare-earth fluorine target and the rare-earth oxygen target to the semiconductor component body. : between 1 and 1:20; the range of the height is: 10 cm to 2 meters. The method for forming a corrosion-resistant coating according to claim 17, wherein the excitation power ratio of the fluorine-containing target and the oxygen-containing target is adjusted to be between 1:1 and 1:20. The method for forming a corrosion-resistant coating as claimed in claim 16, wherein the amorphous phase is used to adjust the content of fluorine in the corrosion-resistant coating. The method for forming a corrosion-resistant coating according to claim 16, wherein the atomic percent content of fluorine in the corrosion-resistant coating is 5% to 90%. The method for forming a corrosion-resistant coating according to claim 16, wherein the formation process of the corrosion-resistant coating comprises at least one of a physical vapor deposition process, a chemical vapor deposition process, and an atomic layer deposition process. The method for forming a corrosion-resistant coating according to claim 23, further comprising: using an auxiliary enhancement source to perform enhancement treatment on the plasma; the auxiliary enhancement source includes: a plasma source, an ion beam source, a microwave source and a radio frequency source at least one of them.

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