CN114250436A - Preparation method of corrosion-resistant coating, semiconductor part and plasma reaction device - Google Patents
Preparation method of corrosion-resistant coating, semiconductor part and plasma reaction device Download PDFInfo
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- CN114250436A CN114250436A CN202011026969.8A CN202011026969A CN114250436A CN 114250436 A CN114250436 A CN 114250436A CN 202011026969 A CN202011026969 A CN 202011026969A CN 114250436 A CN114250436 A CN 114250436A
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- 239000011248 coating agent Substances 0.000 title claims abstract description 185
- 238000005260 corrosion Methods 0.000 title claims abstract description 168
- 230000007797 corrosion Effects 0.000 title claims abstract description 167
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 48
- 238000004140 cleaning Methods 0.000 claims abstract description 45
- 239000000126 substance Substances 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 10
- 238000001020 plasma etching Methods 0.000 claims description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
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- 229910052693 Europium Inorganic materials 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- Chemical Kinetics & Catalysis (AREA)
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A preparation method of a corrosion-resistant coating, a semiconductor part and a plasma reaction device, wherein the method comprises the following steps: providing a part body, wherein the part body at least comprises a first surface to be coated and a second surface to be coated which are not coplanar; forming a compact corrosion-resistant coating on the first surface to be coated, and simultaneously forming a loose corrosion-resistant coating on the second surface to be coated; cleaning the part body, removing the loose corrosion-resistant coating and exposing the second surface to be coated; forming a compact corrosion-resistant coating on the second surface to be coated, and simultaneously forming a loose corrosion-resistant coating on the first surface to be coated; and cleaning the part body to remove the loose corrosion-resistant coating. The coating formed on the surface of the part body obtained by the method provided by the invention has a compact structure, and the risk that the coating falls off to form particles under the bombardment of plasma is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a preparation method of a corrosion-resistant coating, a semiconductor part and a plasma reaction device.
Background
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) are excited by Radio Frequency (RF) excitation to form a plasma. The plasmas have physical bombardment effect and chemical reaction with the surface of the wafer after the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so that the wafer is etched to have a specific structure, and the etching process is completed.
For workpieces located within an etch chamber, it is common to apply some plasma erosion resistant coating (e.g., Y)2O3Coating) to protect the workpiece from corrosion. The stronger the bonding force between the coating and the workpiece, the more stable the corrosion resistance of the workpiece in the etching cavity. For a workpiece with a plane surface, in the process of coating a coating, coating particles and the workpiece are bombarded by a normal phase to form the coating, so that the coating has good bonding force; for a workpiece with a plane and a step, coating particles bombard the side wall of the step in a direction deviating from the normal phase direction, and the bonding force between the formed coating and the workpiece is weak. In the etching chamber, the coating on the sidewall may fall off first under the action of the high-intensity plasma, forming fine particles to cause contamination, resulting in a decrease in the etching yield.
How to effectively coat a high-density coating on a workpiece with steps, the falling risk of the coating is reduced, and the method has important significance for improving the environmental stability of an etching cavity, prolonging the service life of the workpiece and improving the etching yield of semiconductors.
Disclosure of Invention
The first purpose of the invention is to provide a method for forming a corrosion-resistant coating on the surface of a component body, so as to solve the problem that the surface coating of a semiconductor component is easy to fall off in a plasma environment.
In order to achieve the purpose, the technical scheme provided by the invention is as follows: a method of forming a corrosion-resistant coating on a surface of a component body, comprising:
providing a part body, wherein the part body at least comprises a first surface to be coated and a second surface to be coated which are not coplanar;
forming a compact corrosion-resistant coating on the first surface to be coated, and simultaneously forming a loose corrosion-resistant coating on the second surface to be coated;
cleaning the part body, removing the loose corrosion-resistant coating on the second surface to be coated, and exposing the second surface to be coated;
forming a compact corrosion-resistant coating on the second surface to be coated, and simultaneously forming a loose corrosion-resistant coating on the first surface to be coated;
and cleaning the part body, and removing the loose corrosion-resistant coating on the first surface to be coated.
According to the method provided by the invention, the compact corrosion-resistant coating can be prepared on a plurality of surfaces of the part body by rotating the part body and removing the loose corrosion-resistant coating, and the obtained compact corrosion-resistant coating has strong binding force with the contact surface and is not easy to fall off.
Optionally, the formation process of the corrosion-resistant coating is a physical vapor deposition method, which specifically includes:
providing a target material, and exciting the target material to form molecular flow;
enabling a first surface to be coated of the part body to be arranged opposite to the target, enabling the molecular flow to form a compact corrosion-resistant coating on the first surface to be coated, and depositing a second surface to be coated to form a loose corrosion-resistant coating;
cleaning the part body, removing the loose corrosion-resistant coating on the second surface to be coated, and exposing the second surface to be coated;
after a compact corrosion-resistant coating is formed on the first surface to be coated, enabling the second surface to be coated to be arranged opposite to the target, depositing the molecular flow on the second surface to be coated to form the compact corrosion-resistant coating, and depositing on the first surface to be coated to form a loose corrosion-resistant coating;
and cleaning the part body, and removing the loose corrosion-resistant coating on the first surface to be coated.
The invention utilizes a physical vapor deposition method to prepare the corrosion-resistant coating, adjusts the relative arrangement of each surface of the part body and the molecular flow movement direction of the target material by rotating the part body, and removes the loose corrosion-resistant coating by cleaning treatment, so that a plurality of surfaces of the obtained part body can be coated with the compact corrosion-resistant coating.
Optionally, the molecular stream is delivered to the surface of the component body by an enhancement source. The molecular flow energy excited by the target material can be enhanced by the enhancement source.
Optionally, the enhancement source comprises at least one of a plasma enhancement source, an ion beam enhancement source, a microwave enhancement source, or a radio frequency plasma source.
Optionally, the cleaning process is a chemical cleaning.
Optionally, the chemical solution used for the chemical cleaning comprises an acid solution comprising at least one of hydrochloric acid, sulfuric acid, nitric acid or perchloric acid. These acid solutions are capable of removing loose corrosion-resistant coatings that are not resistant to corrosion by the acid solutions due to their loose structure, and can be removed by acid solution corrosion cleaning.
Optionally, the volume concentration range of the chemical solution used for the chemical cleaning is 1: 1-1: 1000. Chemical solutions within this range of concentrations can effectively solution-loosen corrosion-resistant coatings.
Optionally, the chemical cleaning time is 1 second to 1 hour. The time within the range can effectively remove the loose corrosion-resistant coating, and the compact corrosion-resistant coating can not be corroded.
Optionally, the chemical cleaning process regulates the cleaning speed in an auxiliary manner, wherein the auxiliary manner includes at least one of heating or ultrasound.
Optionally, the density of the dense corrosion-resistant coating is as follows: 95 to 100 percent.
Correspondingly, the invention also provides a semiconductor part, which comprises a part body, wherein the part body at least comprises a first surface to be coated and a second surface to be coated which are not coplanar, and the first surface to be coated and the second surface to be coated are provided with the compact corrosion-resistant coating prepared by the method.
Optionally, a gap between the first surface to be coated and the second surface to be coated is 45-135 degrees.
Optionally, the growth direction of the compact corrosion-resistant coating is parallel to the normal direction of the surface of the part body, and the compact corrosion-resistant coating has strong binding force with the part body and is not easy to fall off under the bombardment of plasma; compared with a method for removing the loose corrosion-resistant coating by sand blasting, the chemical cleaning method can avoid the sawtooth-shaped structure of the interface of the corrosion-resistant coating under the bombardment action of the random direction of the gravel, selectively remove the corrosion-resistant coating with the loose structure in different surfaces by chemical cleaning, reserve the corrosion-resistant coating with the compact structure, and enable the structure of the corrosion-resistant coating at the interface to be in continuous transition.
Optionally, the dense corrosion-resistant coating includes a rare earth element, and the rare earth element is at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
Optionally, the dense corrosion-resistant coating is at least one of an oxide, fluoride or oxyfluoride of a rare earth element.
The coating obtained by the rare earth element and the compound thereof has the characteristic of resisting plasma corrosion.
Optionally, the density of the dense corrosion-resistant coating is 95% -100%. The coating in the density range can effectively resist the corrosion of plasma.
Correspondingly, the invention also provides a plasma reaction device, which comprises: a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the semiconductor component is arranged in the reaction cavity and exposed to a plasma environment.
The surface of the semiconductor part in the plasma reaction device is provided with the compact corrosion-resistant coating, so that the semiconductor part can be protected from being corroded by plasma, the semiconductor part is not easy to fall off under the bombardment of the plasma, and the risk of particle pollution in a reaction cavity is reduced.
Optionally, the plasma comprises at least one of a F-containing plasma, a Cl-containing plasma, or an O-containing plasma.
Optionally, the plasma reaction device is a plasma etching device or a plasma cleaning device.
Optionally, the plasma etching apparatus is an inductively coupled plasma reaction apparatus, and the semiconductor component includes at least one of an electrostatic chuck, a cover ring, an inner bushing, and a confinement ring.
Further, the plasma etching device is a capacitive coupling plasma reaction device, and the semiconductor part comprises at least one of a spray header, an upper grounding ring, a lower grounding ring, a covering ring or an insulating ring.
Compared with the prior art, the invention has the following beneficial effects:
according to the method for forming the corrosion-resistant coating, the loose corrosion-resistant coating is removed through the interaction of coating and chemical cleaning of the corrosion-resistant coating on the surface of the part body, the compact corrosion-resistant coating is reserved, the corrosion-resistant coating formed on each surface of the finally obtained part body has a compact structure, the binding force between the compact corrosion-resistant coating and the part body is strong, the corrosion-resistant coating is not easy to bombard by plasmas, the risk that the corrosion-resistant coating falls off to form particles is reduced, the particles are prevented from polluting a substrate, and the yield of the substrate is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of a plasma reaction apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a semiconductor device according to the present invention;
FIG. 3 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
FIG. 4 is a flow chart of a method of forming a corrosion resistant coating in accordance with an embodiment of the present invention;
FIG. 5 is a schematic view of a corrosion-resistant coating formation process according to an embodiment of the present invention.
Reference numerals:
100-a reaction chamber; 101-a base; 102-a shower head; 103-an insulating ring; 104-upper ground ring; 105-lower ground ring; 106-cover ring;
200-a component body; 201-a first surface to be coated; 202-a second surface to be coated;
300-corrosion resistant coating; 400-target material;
w-wafer.
Detailed Description
In order to solve the technical problem, the embodiment of the invention provides a method for forming a corrosion-resistant semiconductor part, an embodiment of a semiconductor part obtained by the method, and an embodiment of a plasma reaction device comprising the semiconductor part.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
FIG. 1 is a schematic structural diagram of a plasma reactor according to the present invention.
Referring to fig. 1, the plasma reaction apparatus includes: the reaction chamber 100 is a plasma environment inside the reaction chamber 100, and the semiconductor components and the inner chamber wall of the reaction chamber 100 are exposed to the plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base 101, wherein the base 101 is used for bearing a substrate W to be processed, and the plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the semiconductor component from being corroded by plasma, it is necessary to coat the surface of the semiconductor component with a corrosion-resistant coating.
In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: a showerhead 102, an insulator ring 103, an upper ground ring 104, a lower ground ring 105, and a cover ring 106.
In other embodiments, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of an electrostatic chuck, a cover ring, an inner bushing, or a confinement ring.
In this embodiment, the plasma includes at least one of a F-containing plasma, a Cl-containing plasma, or an O-containing plasma.
In this embodiment, the plasma processing apparatus is a plasma etching apparatus, and in other embodiments, the plasma processing apparatus is a plasma cleaning apparatus.
In the process of plasma etching, physical bombardment and chemical reaction act on all semiconductor parts in the etching cavity, which are in contact with the plasma, so that the semiconductor parts are corroded. The semiconductor system has severe requirements for micro particle contamination, for example, the number of particles larger than 45nm is 0, and the ground contact rate is even lower than 10.
Therefore, it is necessary to coat the surface of the semiconductor component body in the plasma reaction apparatus with a corrosion-resistant coating against the corrosion by plasma.
The corrosion-resistant coating is prepared by a physical vapor deposition method. As shown in fig. 2, one of the surfaces of the component body 200 is disposed to face the target so that the normal direction of the surface disposed to face the molecular flow is parallel to the moving direction of the molecular flow, so that the corrosion-resistant coating 300 grows in a columnar manner on the surface of the component body 200 disposed to face the molecular flow during the deposition of the corrosion-resistant coating 300, that is, the growth direction of the corrosion-resistant coating 300 is parallel to the normal direction of the surface. As for the sidewall of the vertical surface of the component body 200, the sidewall of the component body 200 is parallel to the moving direction of the molecular flow (i.e., the moving direction of the molecular flow is not parallel to the normal direction of the sidewall of the component body 200), so the molecular flow will deposit the corrosion-resistant coating 300 on the sidewall of the component body 200 at a certain inclination angle. The thickness of the corrosion-resistant coating 300 is thinner as the depth of the side wall of the part body 200 is larger, and the morphology is looser as the growth direction of the corrosion-resistant coating 300 deviates from the normal direction of the side wall of the part body 200 to a larger extent, and thus the bonding force of the corrosion-resistant coating 300 to the side wall of the part body 200 is weaker. In a plasma etching chamber, the weakly bonded corrosion-resistant coating 300 on the sidewall of the component body 200 may be first bombarded off to form fine particles, which may cause contamination.
However, the surface of the semiconductor component in the plasma reaction apparatus of this embodiment has the corrosion-resistant coating, the growth direction of the corrosion-resistant coating is parallel to the normal direction of the contact surface, the structure of the corrosion-resistant coating is compact, the binding force with the component body is strong, and the component body is not easy to fall off. Therefore, the semiconductor parts can be prevented from being corroded by plasma in a plasma environment, and the risk that the coating falls off to form particles under the bombardment of the plasma can be reduced.
The semiconductor components are explained in detail below:
fig. 3 is a schematic diagram of a semiconductor component according to an embodiment of the present invention.
Referring to fig. 3, the embodiment specifically includes a component body 200, where the component body 200 includes at least two surfaces to be coated with a dense corrosion-resistant coating 300, and an included angle between adjacent surfaces to be coated is in a range of 45 ° to 135 °. In this embodiment, the number of the surfaces to be coated is two, which are schematically illustrated as a first surface 201 to be coated and a second surface 202 to be coated, and an included angle between the first surface 201 to be coated and the second surface 202 to be coated is 90 °.
In this embodiment, the growth direction of the corrosion-resistant coating 300 is parallel to the normal directions of the first surface to be coated 201 and the second surface to be coated 202 of the component body 200, so that the corrosion-resistant coating has the characteristic of a high-density structure, has strong bonding force with the surface of the component body 200, and is not easy to fall off under the bombardment of plasma. In addition, the corrosion-resistant coating 300 has a continuous compact structure at the interface between the first surface to be coated 201 and the second surface to be coated 202, still maintains high-strength bonding force, is not easy to be bombarded by plasma to become a weak point to cause phenomena such as falling off, and can better protect a workpiece.
In this embodiment, the corrosion-resistant coating 300 includes a rare earth element that is at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, or at least one of an oxide, fluoride, or oxyfluoride of a rare earth element. The corrosion-resistant coating formed by the rare earth elements and the compounds thereof has the characteristic of plasma resistance.
In this embodiment, the density of the corrosion-resistant coating 300 is 95% to 100%. The corrosion-resistant coating 300 in the density range can effectively resist the corrosion of plasma.
Fig. 4-5 are flow charts of methods for forming corrosion-resistant coatings according to embodiments of the invention.
Referring to fig. 4-5, the method specifically includes the following steps:
10. providing a component body
The component body 200 at least includes a first surface 201 to be coated and a second surface 202 to be coated, and the first surface 201 to be coated and the second surface 202 to be coated are not coplanar, and in this embodiment, the first surface 201 to be coated and the second surface 202 to be coated form an included angle of 90 °.
20. Coated corrosion-resistant coating
A dense corrosion-resistant coating is formed on the first surface to be coated 201, while a loose corrosion-resistant coating is formed on the second surface to be coated 202. In this embodiment, a physical vapor deposition method is adopted to prepare the corrosion-resistant coating, the target 400 is excited to form a molecular flow, the component body is placed in the cavity, the first surface 201 to be coated of the component body 200 and the molecular flow excited by the target 400 are oppositely arranged, the molecular flow is deposited on the first surface 201 to be coated to form a dense corrosion-resistant coating, and meanwhile, the molecular flow is deposited on the second surface 202 to be coated of the component body to form a loose corrosion-resistant coating, as shown in fig. 5 (a).
30. Removing loose corrosion-resistant coatings
The component body 200 is cleaned to remove the loose corrosion-resistant coating on the second surface 202 to be coated, and the second surface 202 to be coated is exposed. The loose corrosion-resistant coating is removed by adopting a chemical cleaning mode. The corrosion-resistant coating on the first surface to be coated 201 with strong bonding force still maintains a compact structure, while the corrosion-resistant coating on the second surface to be coated 202 with weak bonding force is preferentially corroded under the chemical cleaning action and is separated from the surface of the component body 200, so that the surface structure shown in fig. 5(b) is obtained.
40. Judging whether the surfaces to be coated have compact corrosion-resistant coatings
If the surfaces to be coated of the component body 200 all have a dense corrosion-resistant coating, the application of the corrosion-resistant coating is stopped, and if not, the corrosion-resistant coating is continued to be applied. In this embodiment, the surface of the second surface to be coated 202 needs to be coated with a corrosion-resistant coating, so that the component body 200 is rotated by 90 °, the second surface to be coated 202 of the component body 200 is arranged opposite to the excitation direction of the target 400, the molecular flow deposits on the second surface to be coated 201 of the component body 200 to form a dense corrosion-resistant coating, and deposits on the dense corrosion-resistant coating on the first surface to be coated 201 of the component body 200 to form a loose corrosion-resistant coating, as shown in fig. 5 (c). The component body 200 is again chemically cleaned to remove the loose corrosion-resistant coating on the first surface 201 to be coated, so as to obtain the component body shown in fig. 5 (d).
In other embodiments, for the component body with more than two surfaces to be coated, the above steps of coating and cleaning can be repeated according to the number of the surfaces to be coated, on which the corrosion-resistant coating needs to be coated, of the component body, so as to realize coating of the compact corrosion-resistant coating on all the surfaces to be coated of the component body.
In other embodiments, when the corrosion-resistant coating is prepared by using a physical vapor deposition method, an enhancement source may be further disposed between the target 400 and the component body 200, and the molecular flow is transported to the surface of the component body by the enhancement source, so that the energy of the target exciting the molecular flow can be enhanced by the enhancement source. The enhancement source specifically includes at least one of a plasma enhancement source, an ion beam enhancement source, a microwave enhancement source, or a radio frequency enhancement source.
In this embodiment, the chemical solution used for the chemical cleaning includes an acid solution including at least one of hydrochloric acid, sulfuric acid, nitric acid, or perchloric acid. The acid solution removes the loose corrosion-resistant coating, and due to the loose structure of the loose corrosion-resistant coating, the acid solution permeates into the coating along the loose structure to react with the interface of the part body, so that the corrosion-resistant coating is promoted to be separated from the part body and fall off preferentially. For the compact corrosion-resistant coating, because the coating structure is compact, acid liquor only carries out weak chemical corrosion on the surface and cannot enter the interface between the corrosion-resistant coating and the part body, and therefore, when the loose corrosion-resistant coating falls off, the compact corrosion-resistant coating still keeps the characteristic of compact structure and strong binding force.
In this embodiment, the volume concentration of the chemical solution used for chemical cleaning is 1:1 to 1: 1000. The chemical solution within the concentration range has strong corrosivity on the loose corrosion-resistant coating and weak corrosivity on the compact corrosion-resistant coating, so that the aims of removing the loose corrosion-resistant coating and keeping the compact corrosion-resistant coating are fulfilled.
In this example, the chemical cleaning time was 1 second to 1 hour. The time within the range can effectively remove the loose corrosion-resistant coating, and the tight corrosion-resistant coating can not be corroded, so that the aims of removing the loose corrosion-resistant coating and keeping the tight corrosion-resistant coating are fulfilled.
In other embodiments, the chemical cleaning process may also regulate the cleaning speed by an auxiliary means including at least one of heating or sonication. By means of these auxiliary means, the cleaning can be accelerated as required.
Due to the chemical cleaning effect, the corrosion-resistant coating with a loose structure can be completely cleaned and peeled off, and the corrosion-resistant coating with a compact structure is kept, so that the complete and continuous compact structure characteristic can be kept at the junction of the first surface to be coated 201 and the second surface to be coated 202. Compared with the PVD process which adopts the tape shielding function to shield the surface to be coated without coating for coating, the invention can realize the smooth and continuous transition of the junctions of different surfaces without forming a step-shaped structure. The reason is that the chemical cleaning action selectively cleans and removes all the coating structures with loose structures, completely retains the coating structures with compact structures, and simultaneously does not introduce the problems of metal pollution elements and the like remained by the masking tape.
Compared with the process for removing the loose corrosion-resistant coating by sand blasting, the chemical cleaning process adopted by the embodiment of the invention can avoid the phenomenon that the interface of the coating is discontinuous in a sawtooth structure presented under the bombardment effect of the random direction of the gravel. Selectively removing the coating with loose structure in different surfaces by chemical cleaning, retaining the coating with compact structure, and enabling the coating structure at the interface to be in continuous transition.
In conclusion, the surface of the semiconductor part provided by the embodiment of the invention is provided with the compact corrosion-resistant coating, the compact corrosion-resistant coating is not easy to fall off under the bombardment of plasma, and the plasma etching level is improved. According to the method for forming the corrosion-resistant coating, provided by the embodiment of the invention, the compact corrosion-resistant coating can be formed on a plurality of surfaces of the semiconductor part, the obtained coating is not easy to fall off, and the risk of particle pollution is reduced. The semiconductor parts in the plasma reaction device provided by the embodiment of the invention are provided with compact corrosion-resistant coatings, the coatings are not easy to fall off, the particle pollution of the working environment in the reaction cavity is reduced, and the finished product rate of the plasma reaction device product preparation is further improved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (21)
1. A method of forming a corrosion-resistant coating on a surface of a component body, comprising:
providing a part body, wherein the part body at least comprises a first surface to be coated and a second surface to be coated which are not coplanar;
forming a compact corrosion-resistant coating on the first surface to be coated, and simultaneously forming a loose corrosion-resistant coating on the second surface to be coated;
cleaning the part body, removing the loose corrosion-resistant coating on the second surface to be coated, and exposing the second surface to be coated;
forming a compact corrosion-resistant coating on the second surface to be coated, and simultaneously forming a loose corrosion-resistant coating on the first surface to be coated;
and cleaning the part body, and removing the loose corrosion-resistant coating on the first surface to be coated.
2. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 1,
the forming process of the corrosion-resistant coating is a physical vapor deposition method, and specifically comprises the following steps:
providing a target material, and exciting the target material to form molecular flow;
enabling a first surface to be coated of the part body to be arranged opposite to the target, enabling the molecular flow to form a compact corrosion-resistant coating on the first surface to be coated, and depositing a second surface to be coated to form a loose corrosion-resistant coating;
cleaning the part body, removing the loose corrosion-resistant coating on the second surface to be coated, and exposing the second surface to be coated;
after a compact corrosion-resistant coating is formed on the first surface to be coated, enabling the second surface to be coated to be arranged opposite to the target, depositing the molecular flow on the second surface to be coated to form the compact corrosion-resistant coating, and depositing on the first surface to be coated to form a loose corrosion-resistant coating;
and cleaning the part body, and removing the loose corrosion-resistant coating on the first surface to be coated.
3. The method of claim 2, wherein the molecular stream is delivered to the surface of the component body by an enhancement source.
4. The method of claim 3, wherein the enhancement source comprises at least one of a plasma enhancement source, an ion beam enhancement source, a microwave enhancement source, or a radio frequency enhancement source.
5. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 1, wherein the cleaning treatment is chemical cleaning.
6. The method for forming a corrosion-resistant coating on the surface of the component body according to claim 5, wherein the chemical solution used for the chemical cleaning comprises an acid solution, and the acid solution comprises at least one of hydrochloric acid, sulfuric acid, nitric acid or perchloric acid.
7. The method for forming the corrosion-resistant coating on the surface of the component body as recited in claim 5, wherein a volume concentration of a chemical solution used for the chemical cleaning is in a range of 1:1 to 1: 1000.
8. The method for forming a corrosion-resistant coating on the surface of a component body according to claim 5, wherein the chemical cleaning time is 1 second to 1 hour.
9. The method for forming a corrosion-resistant coating on a surface of a component body according to claim 5, wherein the chemical cleaning process regulates the cleaning speed by an auxiliary means including at least one of heating or ultrasound.
10. The method for forming the corrosion-resistant coating on the surface of the component body as claimed in claim 1, wherein the density of the compact corrosion-resistant coating is as follows: 95 to 100 percent.
11. A semiconductor component comprising a component body comprising at least first and second non-coplanar surfaces to be coated, the first and second surfaces having a dense corrosion-resistant coating prepared by the method of any one of claims 1-10.
12. A semiconductor component as claimed in claim 11, wherein the angle between the first and second surfaces to be coated is in the range of 45 ° to 135 °.
13. The semiconductor component according to claim 11, wherein the growth direction of the dense corrosion-resistant coating is parallel to a normal direction of a surface of a component body, and the dense corrosion-resistant coating has a continuous dense structure at an interface between the first surface to be coated and the second surface to be coated.
14. The semiconductor component of claim 11, wherein the dense, corrosion-resistant coating comprises a rare earth element that is at least one of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
15. The semiconductor component of claim 14, wherein the dense corrosion-resistant coating is at least one of an oxide, fluoride, or oxyfluoride of a rare earth element.
16. The semiconductor component according to claim 11, wherein the dense corrosion-resistant coating has a density of 95% to 100%.
17. A plasma reaction apparatus, comprising: a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the semiconductor component according to any one of claims 11 to 16, which is provided in the reaction chamber and exposed to a plasma atmosphere.
18. A plasma reactor as claimed in claim 17, wherein the plasma comprises at least one of a F-containing plasma, a Cl-containing plasma or an O-containing plasma.
19. The plasma reactor apparatus according to claim 17, wherein the plasma reactor apparatus is a plasma etching apparatus or a plasma cleaning apparatus.
20. A plasma reactor according to claim 19, wherein the plasma etching apparatus is an inductively coupled plasma reactor and the semiconductor component comprises at least one of an electrostatic chuck, a cover ring, an inner liner, or a confinement ring.
21. The plasma reactor of claim 19, wherein the plasma etching apparatus is a capacitively coupled plasma reactor, and the semiconductor component comprises at least one of a showerhead, an upper ground ring, a lower ground ring, a cover ring, or an insulator ring.
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| SE529426C2 (en) * | 2006-03-21 | 2007-08-07 | Sandvik Intellectual Property | Apparatus and method of continuous coating in continuous deposition line |
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| CN108346611B (en) * | 2017-01-24 | 2021-05-18 | 中微半导体设备(上海)股份有限公司 | Electrostatic chuck, manufacturing method thereof and plasma processing device |
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| US20140116338A1 (en) * | 2012-10-29 | 2014-05-01 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Coating for performance enhancement of semiconductor apparatus |
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| CN114250436B (en) | 2024-03-29 |
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