CN113539771A - Component, method for forming coating on surface of component, and plasma reaction apparatus - Google Patents
Component, method for forming coating on surface of component, and plasma reaction apparatus Download PDFInfo
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- CN113539771A CN113539771A CN202010301207.8A CN202010301207A CN113539771A CN 113539771 A CN113539771 A CN 113539771A CN 202010301207 A CN202010301207 A CN 202010301207A CN 113539771 A CN113539771 A CN 113539771A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention is applicable to the technical field of semiconductors, and discloses a part used in a plasma reaction device, a method for forming a plasma-resistant coating on the surface of the part and the plasma reaction device. The plasma reaction device comprises a reaction cavity, a plasma environment is arranged in the reaction cavity, the part is exposed in the plasma environment, the part comprises a plasma-resistant coating coated on the surface of a part body, the plasma-resistant coating comprises at least two layers of film layers, the film layers are rare earth metal compounds, the rare earth metal compounds comprise at least one of oxides, fluorides or oxyfluorides of rare earth metal elements, and the two adjacent film layers have different grain growth directions. According to the part provided by the invention, the plasma-resistant coating is coated on the surface of the part, so that the thermal shock resistance of the part is improved, the plasma-resistant coating can absorb thermal stress, the expansion of microcracks is prevented, and the risk that the plasma-resistant coating falls off from the surface of the part is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a part, a method for forming a coating on the surface of the part and a plasma reaction device.
Background
In the manufacturing process of semiconductor devices, plasma etching is a critical process for processing a wafer into a design pattern.
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) are excited by Radio Frequency (RF) excitation to form a plasma. The plasmas have physical bombardment effect and chemical reaction with the surface of the wafer after the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so that the wafer with a specific structure is etched.
However, in the plasma etching process, a large amount of heat is released in the physical bombardment and chemical reaction processes, so that the temperature of the etching reaction cavity is continuously increased; in addition, after the plasma etching process is finished, the heat is taken away due to the cooling effect of the cooler, so that the temperature of the etching chamber is reduced. For workpieces in an etch reaction chamber, a plasma resistant coating (e.g., Y) is typically applied2O3Coating) to protect the workpiece from corrosion.
Therefore, the plasma-resistant coating applied to the workpiece is actually in a thermal cycle impact environment with continuous temperature rise and temperature drop. Due to the continuous accumulation of thermal stress in the service process, the phenomena of generation, expansion, cracking, even peeling and the like of plasma-resistant coating microcracks can be caused, the protection function of the coating fails, and serious accidents such as corrosion of internal workpieces and the like are caused.
How to effectively reduce the thermal stress accumulation of the plasma-resistant coating, avoid the phenomena of microcrack generation, expansion, cracking, peeling and the like, and have important significance for improving the environmental stability of the etching reaction chamber, prolonging the service life of a workpiece and reducing the operation cost of key parts of the etching reaction chamber.
Disclosure of Invention
The invention aims to provide a part used in a plasma reaction device, which solves the technical problem of failure of a plasma-resistant coating caused by thermal stress accumulation and prolongs the service life of the part.
In order to achieve the purpose, the invention provides the following scheme: the utility model provides a spare part for among plasma reaction unit, plasma reaction unit includes the reaction chamber, be the plasma environment in the reaction chamber, the spare part exposes in among the plasma environment, the spare part including coat in the plasma resistant coating on spare part body surface, the plasma resistant coating includes at least two-layer rete, the rete is rare earth metal compound, rare earth metal compound includes at least one of rare earth metal element's oxide, fluoride or oxyfluoride to two adjacent retes have different grain growth directions.
Optionally, an included angle formed by the grain growth direction of two adjacent film layers and the normal of the component body is different.
Optionally, an included angle formed by the grain growth direction of the two adjacent film layers and the normal of the component body is the same, and the grain growth directions of the two adjacent film layers are intersected.
Optionally, an included angle formed by the grain growth directions of two adjacent film layers is greater than 0 ° and smaller than 90 °.
Optionally, the rare earth element in the rare earth metal compound comprises one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
Optionally, the plasma resistant coating has a densification of 95% to 100%.
Optionally, the plasma resistant coating comprises: two adjacent film layers with the same composition.
Optionally, the plasma resistant coating comprises: the two adjacent film layers with different compositions are arranged from the surface of the substrate upwards, and the thermal expansion coefficients of the film layers are reduced in sequence.
Optionally, the plasma resistant coating has a thickness H, 0.001 μm ≦ H ≦ 200 μm.
Optionally, the thickness of each film layer is h, and h is greater than or equal to 1nm and less than or equal to 10000 nm.
A second object of the present invention is to provide a method for forming a plasma-resistant coating on a surface of a component, comprising:
providing an evaporation source;
arranging the evaporation source opposite to the parts, wherein each film layer is grown on the surface of the part by molecular flow sprayed by the evaporation source;
and before the next film layer grows, adjusting the directions of the molecular flow of the evaporation source and the normal line of the part, so that the adjacent film layers have different grain growth directions.
Optionally, the plasma resistant coating is formed by a method comprising physical vapor deposition.
Optionally, the physical vapor deposition method comprises at least one of plasma enhanced physical vapor deposition, microwave assisted physical vapor deposition, reactive physical vapor deposition, or ion beam assisted deposition.
Optionally, before growing the next film layer, the component is tilted by adjusting the tilting mechanism, so that adjacent film layers formed have different grain growth directions.
Optionally, before growing the next film layer, the evaporation source is tilted so that adjacent film layers formed have different grain growth directions.
A third object of the present invention is to provide a plasma reaction apparatus, comprising:
the reaction chamber is internally provided with a plasma environment;
the above-mentioned component part, the said component part is exposed to the said plasma environment.
Optionally, the plasma reaction apparatus is an inductively coupled plasma reaction apparatus, and the component includes: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
Optionally, the plasma reaction apparatus is a capacitively coupled plasma reaction apparatus, and the component includes: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
The invention has the beneficial effects that:
the embodiment of the invention provides a part for a plasma reaction device, which comprises a reaction cavity, wherein the reaction cavity is in a plasma environment, the part is exposed in the plasma environment, the part comprises a plasma-resistant coating coated on the surface of a part body, the plasma-resistant coating comprises at least two film layers, the film layers are rare earth metal compounds, the rare earth metal compounds comprise at least one of oxides, fluorides or oxyfluorides of rare earth metal elements, and two adjacent film layers have different grain growth directions. Thus, a large number of staggered grain boundaries are formed between two adjacent film layers through different grain growth directions. When the plasma-resistant coating bears the action of thermal stress caused by temperature rise and temperature reduction, the crystal boundaries arranged in a large number in a staggered mode can guide the thermal stress to be transmitted along the crystal boundaries in a staggered mode, the accumulation effect of the stress in the plasma-resistant coating is greatly reduced, the risk that the plasma-resistant coating generates microcracks and even falls off and fails is reduced, the service life of the plasma-resistant coating is further prolonged, and parts are protected better.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of a component;
FIG. 2 is a schematic structural view of a plasma reaction apparatus according to the present invention;
FIG. 3 is a schematic cross-sectional view of a component of the present invention;
FIG. 4 is a flow chart of the present invention for forming a plasma-resistant coating on the surface of a component body;
FIG. 5 is a schematic illustration of a plasma resistant coating formation process of the present invention;
FIG. 6 is a schematic cross-sectional view of another component of the present invention;
FIG. 7 is a schematic cross-sectional view of another embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of another embodiment of the present invention.
Reference numerals:
100. a component body; 200. a plasma resistant coating;
301. a bushing; 302. a gas nozzle; 303. an electrostatic chuck; 304. a focus ring; 305. an insulating ring; 306. a cover ring; 307. a substrate holding frame; 308. a ceramic cover plate; 309. a reaction chamber;
400. a source of enhancement; 500. a target material; 600. a substrate; 700. plasma resistant coatings.
Detailed Description
The plasma reaction device comprises a reaction cavity, wherein the reaction cavity is a plasma environment, the parts are exposed in the plasma environment, and the plasma has strong corrosivity, so that the surface of the part body needs to be coated with a corrosion-resistant coating to prevent the plasma from corroding the part body. In general, as shown in fig. 1, fig. 1 is a schematic structural diagram of a component, a component body 600 is arranged opposite to a molecular flow of an evaporation source, a normal direction of the component body 600 is kept parallel to a direction of the molecular flow of the evaporation source during deposition of a plasma-resistant coating 700, and the plasma-resistant coating 700 is kept growing on the component body 600 in a columnar manner.
The plasma-resistant coating 700 applied in this manner conducts thermal stress along the columnar grain interface when subjected to a cyclic thermal shock of temperature rise-fall in the etch reactor 309. If the deformation of the component body 600 caused by the thermal stress exceeds the critical value of the deformation that the plasma-resistant coating 700 can bear, microcracks are easily generated at the interface between the plasma-resistant coating 700 and the component body 600, and further extend along the grain boundary between the columnar crystals, and even if the plasma-resistant coating falls off, the component body is exposed to the plasma environment, and the plasma is liable to corrode the component body.
In order to solve the technical problems, the invention provides a part used in a plasma reaction device, a method for forming a plasma-resistant coating on the surface of the part and the plasma reaction device. The plasma-resistant coating 200 is coated on the surface of the component body, the plasma-resistant coating 200 comprises at least two adjacent film layers, the film layers are rare earth metal compounds, the rare earth metal compounds comprise at least one of rare earth metal element oxides, fluorides or oxyfluorides, the two adjacent film layers have different grain growth directions, and the plasma-resistant coating 200 can prolong the service life of the component.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
FIG. 2 is a schematic structural diagram of a plasma reactor according to the present invention.
Referring to fig. 2, the plasma reaction apparatus includes: a reaction chamber 309, wherein a plasma environment is arranged in the reaction chamber 309; and (c) a component exposed to a plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base, wherein the base is used for bearing a substrate to be processed, and the plasma is used for processing the substrate to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to apply the plasma-resistant coating 200 to the surface of the component body 100.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: a liner 301, a gas nozzle 302, an electrostatic chuck 303, a focus ring 304, an insulating ring 305, a cover ring 306, a substrate holding frame 307, a ceramic cover plate 308, or a gas connection flange (not shown). The surfaces of these components need to be coated with a plasma resistant coating 200 to prevent plasma erosion.
In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. The surfaces of these components need to be coated with a plasma resistant coating 200 to prevent plasma erosion.
In the following, the component is described in detail, and the following substrate 100 is the component body 100:
fig. 3 is a schematic cross-sectional view of a component of the present invention.
Referring to fig. 3, the components include: a substrate 100; the plasma-resistant coating 200 is coated on the surface of the substrate 100, the plasma-resistant coating 200 comprises at least two film layers, the film layers are rare earth metal compounds, the rare earth metal compounds comprise one or more of rare earth metal oxide, fluoride or oxyfluoride, and two adjacent film layers have different grain growth directions. S represents a grain growth direction.
Although the components are exposed to the plasma environment of the plasma reaction apparatus, the plasma-resistant coating 200 on the surface of the substrate 100 includes at least two layers, and two adjacent layers have different grain growth directions, so that when the plasma-resistant coating 200 is subjected to cyclic thermal shock of temperature rise and temperature drop in the reaction chamber 309, thermal stress is conducted along a large number of staggered grain boundary surfaces, the thermal stress conduction distance can be greatly prolonged, the thermal stress accumulation effect in the plasma-resistant coating 200 is reduced, and the plasma-resistant coating 200 is prevented from falling off. Meanwhile, even if the deformation amount caused by the thermal stress of the substrate 100 and the plasma-resistant coating 200 is close to a critical value, microcracks are generated at the interface of the plasma-resistant coating 200 and the substrate 100, the energy of the microcrack expansion can be absorbed by the staggered grain boundaries to prevent the microcracks from further expanding, and the risk of film layer falling off is reduced. The grain boundary surface refers to a surface where adjacent film layers are in contact with each other. In addition, because two adjacent film layers have different grain growth directions, electric charges are conducted along a large number of staggered grain boundary surfaces, the conduction distance of the electric charges can be greatly prolonged, the electric charge accumulation effect in the plasma-resistant coating 200 is reduced, and the arc breakdown phenomenon is prevented.
In one embodiment, the grain growth directions S of two adjacent layers are different from the normal of the substrate 100, and the grain growth directions S of the two adjacent layers are inclined to the same side of the normal, so that when the resultant force of the thermal stress in the horizontal direction is smaller than the critical stress value of the layers, the thermal stress propagates along the grain boundary when the film is subjected to the thermal stress. The resultant force of the thermal stress in the horizontal direction is less than the critical stress value which can be borne by the adjacent film layers, and the film layers are not easy to fall off.
In another embodiment, the included angle formed by the grain growth direction S of the two adjacent films and the normal of the substrate 100 is different, and the grain growth directions S of the two adjacent films are respectively inclined to the two sides of the normal, so that the resultant force of the thermal stress in the horizontal direction can offset a part of the resultant force, and the thermal stress is smaller than the critical stress of the films, and can bear larger thermal stress, so that the films are less prone to fall off.
In practical applications, the grain growth direction S of one of the two layers may be a normal direction, and the other layer is inclined to one side of the normal of the substrate 100. Wherein, the film layer with the grain growth direction as the normal direction can play a transition role.
In this embodiment, the angle formed by the grain growth directions of two adjacent film layers is greater than 0 ° and smaller than 90 °.
The rare earth metal element in the rare earth metal compound comprises one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu. The rare earth metal compound includes one or more of an oxide, fluoride or oxyfluoride of a rare earth metal element.
In one embodiment, the plasma resistant coating 200 has a densification of 95% to 100%.
In one embodiment, the plasma resistant coating 200 comprises: two adjacent film layers with the same composition. The adjacent films have the same composition and the same amount of deformation when subjected to thermal stress. By setting the different grain growth directions of the two adjacent film layers, the expansion path of the microcrack can be prolonged, the falling risk of the plasma-resistant coating 200 is reduced, and the service life of the part is prolonged.
In another embodiment, the plasma resistant coating 200 comprises: the thermal expansion coefficients of two adjacent film layers with different compositions are sequentially reduced from the surface of the substrate 100 to the top. When the components of two adjacent film layers are different, the sequence of the two adjacent film layers is limited to be from the surface of the substrate 100 to the top, and the thermal expansion coefficients of the film layers are sequentially reduced, so that the deformation of each film layer due to thermal stress is reduced layer by layer, and the adjacent film layers are prevented from being layered and falling off.
In this embodiment, the plasma resistant coating 200 has a thickness H, where 0.001 μm H200 μm. The greater the thickness of the plasma resistant coating 200, the higher the cost required. The thickness H of the plasma-resistant coating 200 is set to be not less than 0.001 mu m and not more than 200 mu m, so that the cost can be saved, and the plasma-resistant coating 200 can also protect the surfaces of the parts.
In one embodiment, the thickness of each film layer is h, wherein h is more than or equal to 1nm and less than or equal to 10000 nm.
Fig. 4 is a flow chart of the present invention for forming a plasma-resistant coating on the surface of the component body 100.
Please refer to fig. 4, which includes:
providing an evaporation source;
arranging an evaporation source opposite to the parts, and growing each film layer on the surface of the substrate 100 by molecular flow sprayed by the evaporation source;
before the next film layer grows, the directions of the molecular flow of the evaporation source and the normal line of the substrate are adjusted, so that the adjacent film layers have different grain growth directions.
When the plasma-resistant coating 200 coated by the forming method is subjected to cyclic thermal shock of temperature rise and temperature drop in the reaction chamber 309, thermal stress is conducted along a large number of staggered grain boundary surfaces, so that the conduction distance is greatly prolonged, and the thermal stress directly transmitted to the substrate 100 is reduced. Meanwhile, even if the difference of the thermal expansion of the substrate 100 and the plasma-resistant coating 200 is close to a critical value, the microcracks generated at the interface of the plasma-resistant coating 200 and the substrate 100 can be absorbed by the staggered grain boundaries, so that the further expansion of the coating is prevented, and the risk of film layer falling off is reduced. Specifically, before the next film layer is grown, if the thickness of the plasma-resistant coating 200 is sufficient, the adjustment of the normal direction of the substrate may be stopped, thereby ending the growth of the film layer. If the thickness of the plasma-resistant coating 200 does not meet the requirement, the normal direction of the substrate is continuously adjusted, and the next film layer is grown until the thickness of the plasma-resistant coating 200 meets the requirement.
In one embodiment, the plasma resistant coating 200 is formed by a process including physical vapor deposition. Physical Vapor Deposition (PVD) is a method of vaporizing a coating material by a Physical method (such as evaporation, sputtering, etc.) and depositing a film on the surface of the substrate 100. The physical vapor deposition technology has simple process, no pollution, less material consumption, uniform and compact film formation and strong bonding force with the substrate 100, and improves the environment.
Specifically, referring to fig. 5 and 6, fig. 6 is a schematic cross-sectional structure of another component according to the present invention; fig. 5 is a schematic diagram of a method for forming a plasma-resistant coating according to the present invention, in which a substrate 100 can be tilted at a certain angle by adjusting a tilting mechanism in a PVD apparatus, so as to adjust the grain growth direction of a plasma-resistant coating 200. In fig. 5, a and C form a film layer a, and B and d form a film layer B and a film layer C, respectively, wherein the grain growth direction of the film layer a is parallel to the normal direction of the substrate 100, and the grain growth direction of the film layer B and the grain growth direction of the film layer C are respectively deviated to both sides of the normal.
In the embodiment, before the next film layer is grown, the component is inclined by adjusting the inclination mechanism, so that the adjacent film layers formed have different grain growth directions.
In other embodiments, the evaporation source is tilted to form adjacent layers with different grain growth directions before the next layer is grown.
Since the plasma resistant coating 200 is under high vacuum (typically less than 10 f)-4Pa) the excited evaporation source molecules and atoms in the cavity are combined with the substrate atoms by Van der Waals force, the plasma-resistant coating 200 can be directly deposited on the substrate 100, and the bonding force between the plasma-resistant coating 200 and the substrate 100 is strong, so that an additional transition layer does not need to be added between the substrate 100 and the plasma-resistant coating 200 to match the thermal expansion coefficient, and the PVD process cost is favorably reduced; nor is special roughening of the substrate 100 requiredA stronger bonding force between the plasma-resistant coating 200 and the substrate 100 can be achieved by treatment (e.g., sandblasting).
Because the plasma-resistant coating 200 is deposited in a high vacuum (generally less than 10-4Pa) chamber, the plasma-resistant coating 200 has a low impurity content during formation, and the structure formed between the crystal grains is dense, with a compactness approaching 100% of the theoretical density. Thus, the highly dense plasma-resistant coating 200 is less susceptible to corrosion and maintains structural stability when subjected to the physical bombardment and chemical action of the plasma.
In one embodiment, the physical vapor deposition method includes one of plasma enhanced physical vapor deposition, microwave assisted physical vapor deposition, reactive physical vapor deposition, or ion beam assisted deposition.
Specifically, fig. 6 shows a method for forming the plasma-resistant coating 200, and referring to fig. 5, the method includes: please refer to fig. a: setting the molecular flow of the evaporation source to be parallel to the normal direction of the substrate 100, and depositing an A film layer on the surface of the substrate 100; please refer to fig. b: inclining the substrate 100 at a certain angle, and depositing a film B on the surface of the film A; please refer to fig. c: inclining the substrate 100 at a certain angle to enable the molecular flow of the evaporation source to be parallel to the normal direction of the substrate 100, and depositing a film layer A on the surface of the film layer B; please refer to fig. d: and (3) inclining the substrate 100 at a certain angle, depositing a C film layer on the surface of the A film layer, and performing ABACABAC … … according to the deposition sequence until a film layer with the required thickness is deposited. Namely, a film A is inserted between a film B and a film C, and due to the transition of the film A, the resultant force of the film B and the film C in the horizontal direction is smaller than the critical stress range, the bonding force between the films is firmer, and the plasma-resistant coating 200 is not easy to fall off. When the plasma-resistant coating 200 coated in this way is subjected to cyclic thermal shock of temperature rise and temperature reduction in the etching reaction chamber 309, heat is conducted along a large number of staggered grain boundary surfaces, so that the heat conduction distance can be greatly prolonged, and the heat directly transferred to the surface of a part is reduced. Meanwhile, even if the thermal expansion difference between the surface of the part and the plasma-resistant coating 200 is close to a critical value, microcracks generated at the interface of the plasma-resistant coating 200 and the part are absorbed by staggered grain boundaries, so that the further expansion of the part is prevented, and the risk of film falling is reduced.
Fig. 7 is a schematic cross-sectional view of another component of the present invention.
Referring to fig. 7, a plasma resistant coating 200 is applied to a substrate 100 by way of ABABABAB … …. Firstly, depositing an A film layer, setting the molecular flow of an evaporation source to be parallel to the normal direction of the substrate 100, after the A film layer is deposited, inclining the substrate 100 by a certain angle, then depositing a B film layer, and continuously circulating the deposition sequence of ABAB … … until the film layer with the required thickness is obtained. Namely, the component force of the film layer A in the horizontal direction is not less than the critical stress range, and the film layer is not easy to fall off.
Fig. 8 is a schematic cross-sectional view of another embodiment of the present invention.
Referring to fig. 8, a plasma resistant coating 200 is applied to a substrate 100 using BCBCBC … …. Firstly, depositing a B film layer, setting the molecular flow of an evaporation source to have a certain inclination angle with the normal direction of the substrate 100, after the deposition of the B film layer is finished, inclining the substrate 100 by a certain angle, depositing a C film layer, wherein the grain growth direction of the B film layer and the grain growth direction of the C film layer are respectively deviated to two sides of the normal, and alternately depositing the B film layer and the C film layer until the film layer with the required thickness is obtained. When the film is subjected to thermal stress, the component directions of the thermal stress in the horizontal direction of the film B and the film C are opposite, and the resultant force is smaller than the critical stress, so that the films are not easy to fall off.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (18)
1. The utility model provides a spare part for among plasma reaction unit, plasma reaction unit includes the reaction chamber, be the plasma environment in the reaction chamber, the spare part exposes in the plasma environment, its characterized in that, spare part is including coating in the plasma-resistant coating on spare part body surface, plasma-resistant coating includes at least two-layer rete, the rete is rare earth metal compound, rare earth metal compound includes at least one in rare earth metal element's oxide, fluoride or oxyfluoride to two adjacent retes have different grain growth direction.
2. The component part of claim 1, wherein the grain growth directions of two adjacent film layers are at different angles from the normal to the component part body.
3. The component according to claim 1, wherein the grain growth directions of two adjacent film layers form the same angle with the normal of the component body, and the grain growth directions of two adjacent film layers intersect.
4. The component part of claim 1, wherein the grain growth directions of adjacent layers form an angle greater than 0 ° and less than 90 °.
5. The component part of claim 1, wherein the rare earth element in the rare earth metal compound comprises one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
6. The component part according to claim 1, wherein the plasma resistant coating has a densification of 95% to 100%.
7. The component part of claim 1, wherein the plasma resistant coating comprises: two adjacent film layers with the same composition.
8. The component part of claim 1, wherein the plasma resistant coating comprises: the two adjacent film layers with different compositions are arranged from the surface of the substrate upwards, and the thermal expansion coefficients of the film layers are reduced in sequence.
9. The component part according to claim 1, wherein the plasma resistant coating has a thickness H, 0.001 μm H200 μm.
10. The component part of claim 9, wherein each of the film layers has a thickness h, 1nm ≦ h ≦ 10000 nm.
11. A method of forming a plasma resistant coating on a surface of a component, comprising:
providing an evaporation source;
arranging the evaporation source opposite to the parts, wherein each film layer is grown on the surface of the part by molecular flow sprayed by the evaporation source;
and before the next film layer grows, adjusting the directions of the molecular flow of the evaporation source and the normal line of the part, so that the adjacent film layers have different grain growth directions.
12. The method for forming a plasma-resistant coating on a surface of a component part according to claim 11, wherein the plasma-resistant coating is formed by a physical vapor deposition method.
13. The method of forming a plasma-resistant coating on a surface of a component part according to claim 12, wherein the physical vapor deposition process comprises at least one of a plasma-enhanced physical vapor deposition process, a microwave-assisted physical vapor deposition process, a reactive physical vapor deposition process, or an ion beam-assisted deposition process.
14. The method of forming a plasma-resistant coating on a surface of a component part according to claim 11, wherein the component part is tilted by adjusting the tilting mechanism before growing a next film layer so that adjacent film layers are formed with different grain growth directions.
15. The method of forming a plasma-resistant coating on a surface of a component part according to claim 11, wherein the evaporation source is tilted so that adjacent film layers formed have different grain growth directions before the next film layer is grown.
16. A plasma reaction apparatus, comprising:
the reaction chamber is internally provided with a plasma environment;
the component part of any of claims 1 to 10, exposed to the plasma environment.
17. The plasma reactor apparatus of claim 16 wherein said plasma reactor apparatus is an inductively coupled plasma reactor apparatus, said components comprising: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
18. The plasma reactor apparatus of claim 16 wherein said plasma reactor apparatus is a capacitively coupled plasma reactor apparatus, said components comprising: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
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| CN202010301207.8A CN113539771B (en) | 2020-04-16 | 2020-04-16 | Component, method for forming coating on surface of component, and plasma reaction device |
| TW110110034A TW202140822A (en) | 2020-04-16 | 2021-03-19 | Component, method of forming coating on surface thereon, and plasma reaction device improving the thermal shock resistance of the components by coating the surface of the components with plasma resistant coatings |
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| Publication number | Publication date |
|---|---|
| CN113539771B (en) | 2024-04-12 |
| TW202140822A (en) | 2021-11-01 |
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