CN113707526B - Component, method for forming plasma-resistant coating and plasma reaction device - Google Patents
Component, method for forming plasma-resistant coating and plasma reaction device Download PDFInfo
- Publication number
- CN113707526B CN113707526B CN202010432447.1A CN202010432447A CN113707526B CN 113707526 B CN113707526 B CN 113707526B CN 202010432447 A CN202010432447 A CN 202010432447A CN 113707526 B CN113707526 B CN 113707526B
- Authority
- CN
- China
- Prior art keywords
- plasma
- resistant coating
- oxide substrate
- component
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 114
- 239000011248 coating agent Substances 0.000 title claims abstract description 103
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 239000000126 substance Substances 0.000 claims abstract description 32
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 25
- 150000002909 rare earth metal compounds Chemical class 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 150000002910 rare earth metals Chemical class 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 210000002381 plasma Anatomy 0.000 description 150
- 230000008569 process Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 13
- 238000005260 corrosion Methods 0.000 description 7
- 230000007797 corrosion Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 150000002222 fluorine compounds Chemical class 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Surface Treatment Of Glass Fibres Or Filaments (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention is suitable for the technical field of semiconductors, and discloses a method for forming a plasma-resistant coating on parts and components in a plasma reaction device and the plasma reaction device. A component for use in a plasma reaction apparatus, the plasma reaction apparatus comprising a reaction chamber within which is a plasma environment, the component being exposed to the plasma environment, the component comprising: a non-oxide substrate; the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are transited through saturated chemical bonds. The part provided by the invention realizes transition at the interface between the non-oxide substrate and the plasma-resistant coating through saturated chemical bonds, reduces the risk of falling off of the plasma-resistant coating, and prolongs the service life of the plasma-resistant coating.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a part, a method for forming a plasma-resistant coating and a plasma reaction device.
Background
In a typical plasma etch process, a process gas (e.g., CF 4、O2, etc.) is excited by radio frequency (RadioFrequency, RF) to form a plasma. These plasmas undergo physical bombardment and chemical reaction with the wafer surface after passing through the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, thereby etching the wafer with a specific structure.
However, during the plasma etching process, a great amount of heat is released during the physical bombardment and chemical reaction, so that the temperature of the cavity is continuously raised; in addition, after the plasma etching process is finished, the heat is taken away due to the cooling effect of the cooler, so that the temperature of the chamber is reduced. For parts that are within the etch chamber, some plasma resistant coating (e.g., a Y 2O3 coating) is typically applied to protect the parts from corrosion. Therefore, the plasma resistant coating coated on the parts is in a continuously heating and cooling thermal cycle impact environment. The thermal stress is continuously accumulated in the service process, so that the phenomena of microcrack generation, expansion, cracking, peeling and the like of the plasma-resistant coating can be caused, and serious accidents such as failure of the protection function of the plasma-resistant coating, corrosion of internal parts and the like can be caused. This phenomenon is particularly serious for parts closer to the wafer. On the one hand, due to the close distance from the wafer, the thermal fluctuation and the corrosion of the plasma are more serious; on the other hand, in order to avoid additional metal contamination, these parts are generally made of non-oxide materials, and the bonding force between the plasma-resistant corrosion-resistant coating and the non-oxide parts is weaker, so that the plasma-resistant coating and the non-oxide substrate are more likely to fall off.
How to effectively reduce the thermal stress accumulation of the plasma resistant coating on the surface of the non-oxide substrate, avoid the phenomena of microcrack generation, expansion, cracking, peeling and the like, and have important significance in improving the environmental stability of the etching cavity, prolonging the service life of parts and reducing the operation cost of key parts of the etching cavity.
Disclosure of Invention
The first object of the present invention is to provide a component, which aims to solve the technical problem that a plasma resistant coating is easy to fall off from a non-oxide substrate.
In order to achieve the above purpose, the invention provides the following scheme: a component for use in a plasma reaction apparatus, the plasma reaction apparatus comprising a reaction chamber within which is a plasma environment, the component being exposed to the plasma environment, the component comprising:
A non-oxide substrate;
The plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are transited through saturated chemical bonds. In this way, the surface saturation treatment is carried out on the non-oxide substrate, the chemical bond transition of the non-oxide substrate and the plasma-resistant coating at the interface is promoted, the bonding force of the plasma-resistant coating and the non-oxide substrate is improved, the thermal shock resistance of the plasma-resistant coating is further improved, the risk of cracking or even falling of the plasma-resistant coating is reduced, and the service life of the plasma-resistant coating is prolonged.
Optionally, the saturated chemical bond comprises: si-O bond. In this way, a large amount of unsaturated dangling bonds Si-and O atoms on the surface of the non-oxide substrate are combined into Si-O bonds to reach saturation, so that the chemical bond transition of the non-oxide substrate and the plasma-resistant coating at the interface is promoted, the bonding force of the plasma-resistant coating and the non-oxide substrate is improved, and the bonding force of the plasma-resistant coating and the non-oxide substrate is stronger.
Optionally, the rare earth metal compound comprises one or more of an oxide, fluoride, or oxyfluoride of a rare earth metal element. Thus, one or more of the rare earth element oxides, fluorides or oxyfluorides are selected accordingly, depending on the process gas selected for the actual plasma etching process. In specific application, when the F/O ratio in the process gas is higher, fluoride of rare earth metal element can be selected as a main material of the plasma-resistant coating; when the F/O ratio in the process gas is low, the oxide of the rare earth metal element can be selected as the main material of the plasma-resistant coating.
Optionally, the rare earth metal element in the rare earth metal compound includes: y, sc, la, ce, pr, nd, eu, gd, tb, dy, ho, er, tm, yb or Lu. In this way, the plasma-resistant protective coating consisting of one or more of the rare earth element oxides, fluorides or oxyfluorides can form a compact film layer, thereby well protecting the parts in the etching cavity and preventing the non-oxide substrate from being corroded.
Optionally, the material of the non-oxide substrate comprises: one or more of silicon, silicon carbide, or silicon nitride. Specifically, the silicon material has excellent properties such as unidirectional conductive property, thermosensitive property, photoelectric property, doping property and the like, and is an important integrated circuit base material with wide global application.
A second object of the present invention is to provide a plasma processing apparatus including:
a reaction chamber in which a plasma environment is formed;
such as the above components, are exposed to the plasma environment. In order to prevent the surface of the non-oxide substrate from being corroded by the plasma, a plasma-resistant coating needs to be coated on the surface of the non-oxide substrate because the plasma has strong corrosiveness.
Optionally, the plasma reaction device is an inductively coupled plasma reaction device, and the parts include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulating ring, an electrostatic chuck, a cover ring, or a substrate holding frame. Specifically, the non-oxide substrate, i.e., the body of the component, requires a plasma resistant coating on its surface to prevent plasma erosion.
Optionally, the plasma reaction device is a capacitive coupling plasma reaction device, and the parts include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. In particular, the surface of the non-oxide substrate needs to be coated with a plasma resistant coating to prevent plasma erosion.
A third object of the present invention is to provide a method for forming a plasma resistant coating on a component as described above, comprising:
Providing a non-oxide substrate;
carrying out saturation treatment on the surface of the non-oxide substrate to form saturated chemical bonds on the surface of the non-oxide substrate;
After formation of saturated chemical bonds, a plasma resistant coating is applied to the surface of the non-oxide substrate. Therefore, when the plasma-resistant coating coated by the method is subjected to cyclic thermal shock of temperature rising and reducing in the plasma etching reaction cavity, a saturated chemical bond transition is formed between the interface of the non-oxide substrate and the plasma-resistant coating, so that the bonding strength of the plasma-resistant coating and the non-oxide substrate is enhanced, and microcracks of the plasma-resistant coating and the non-oxide substrate at the interface can be effectively prevented from being generated, expanded and falling.
Optionally, the saturation processing method includes: one or more of high temperature oxidation, oxygen-containing plasma treatment, or oxygen-containing ion implantation. In this way, a large number of O atoms are introduced to the surface of the non-oxide substrate, so that the transition of saturated chemical bonds between the surface of the non-oxide substrate and the plasma-resistant coating is caused, and the bonding force of the plasma-resistant coating and the non-oxide substrate is increased.
Optionally, the plasma in the oxygen-containing plasma treatment comprises: oxygen plasma or ozone plasma. Thus, the saturation treatment process employs a highly oxidizing plasma to bombard the non-oxide substrate prior to the selected coating process.
Optionally, the coating method is one or more of physical vapor deposition, chemical vapor deposition, or atomic layer deposition. In particular, these coating methods can form a plasma-resistant coating on the surface of a non-oxide substrate on the basis of the invention, so as to avoid the corrosion of parts by plasma.
The invention has the beneficial effects that:
In the parts used in the plasma reaction device, the plasma resistant coating is coated on the surface of the non-oxide substrate, and a large number of unsaturated dangling bonds on the surface of the non-oxide substrate are combined with atoms to form chemical bonds so as to reach saturation, so that the non-oxide substrate and the plasma resistant coating form a stable structure near an interface, transition is carried out, the binding force of the plasma resistant coating and the non-oxide substrate is improved, the thermal shock resistance of the plasma resistant coating is further improved, the risks of cracking and falling off of the plasma resistant coating are reduced, and the service life of the plasma resistant coating is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a plasma resistant coating and a silicon substrate;
FIG. 2 is a schematic structural view of a plasma reaction apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a component according to an embodiment of the present invention;
FIG. 4 is a process flow diagram of forming a plasma resistant coating on a component provided by an embodiment of the invention.
Reference numerals:
10. Plasma resistant coatings; 20. a silicon substrate;
301. a bushing; 302. a gas nozzle; 303. an electrostatic chuck; 304. a focus ring; 305. an insulating ring; 306. a cover ring; 307. a substrate holding frame; 308. a ceramic cover plate; 309. a reaction chamber;
100. Plasma resistant coatings; 200. a non-oxide substrate; 300. a chemical bond.
Detailed Description
As shown in fig. 1, fig. 1 is a schematic structural diagram of a plasma resistant coating 10 and a silicon substrate 20. Generally, the non-oxide substrate is made of Si, siC, or other materials. Taking the silicon substrate 20 as an example, in the silicon substrate 20, 4-coordinated Si atoms form a saturated coordination structure, and form Si-Si bonds with each other, so that the bonding force is strong. Whereas on the surface of the silicon substrate 20, the surrounding O atoms are not sufficiently coordinated, so that the surface Si atoms contain a large number of Si-dangling bonds (unsaturated bonds). When the plasma resistant coating 10 (e.g., Y 2O3 coating) is applied to the surface of the silicon substrate 20 having a large number of unsaturated bonds on the surface, the lattice constant mismatch between Si and Y 2O3 (lattice constant of SiLattice constant of Y 2O3/>) Only a small portion of these Si-unsaturations can bond to Y 2O3, so that a significant amount of unsaturation remains at the interface between the silicon substrate 20 and the Y 2O3 coating. When the Y 2O3 coating coated in this way is subjected to thermal shock in the etching cavity, the unsaturated bonds can be easily broken at the interface of the Y 2O3 coating and the silicon substrate 20 to form microcracks, and the microcracks further spread along the grain boundaries to cause the falling-off phenomenon of the plasma-resistant coating 10.
In order to solve the technical problems, the invention provides a part, a method for forming a plasma-resistant coating on the part and a plasma reaction device. Specifically, a spare part for in plasma reaction device, plasma reaction device includes the reaction chamber, is the plasma environment in the reaction chamber, and spare part exposes in the plasma environment, and the spare part includes: a non-oxide substrate; the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are transited through saturated chemical bonds.
According to the invention, before the plasma-resistant coating process, the non-oxide substrate is subjected to surface saturation treatment, so that the chemical bond transition between the non-oxide substrate and the plasma-resistant coating at the interface is promoted, the binding force of the plasma-resistant coating and the non-oxide substrate is improved, the heat shock resistance of the plasma-resistant coating is further improved, the cracking and falling risks of the plasma-resistant coating are reduced, and the service life of the plasma-resistant coating is prolonged.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Furthermore, the description of the "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
FIG. 2 is a schematic structural view of a plasma reaction apparatus according to the present invention.
Referring to fig. 2, the plasma reaction apparatus includes: reaction chamber 309, a plasma environment within reaction chamber 309; parts, which are exposed to plasma environment.
The plasma reaction apparatus further includes: the substrate processing device comprises a base, a plasma body and a plasma body, wherein the base is used for bearing a substrate W to be processed, and the plasma body is used for processing the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to apply the plasma resistant coating 100 on the surface of the component body.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the parts exposed to the plasma environment include: a liner 301, a gas nozzle 302, an electrostatic chuck 303, a focus ring 304, an insulating ring 305, a cover ring 306, a substrate holding frame 307, a ceramic cover plate 308, or a gas connection flange (not shown). The surfaces of these components need to be coated with a plasma resistant coating 100 to prevent plasma erosion.
In a specific application, the plasma reaction device may also be a capacitive coupling plasma reaction device, and correspondingly, the parts exposed to the plasma environment include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. The surfaces of these components need to be coated with a plasma resistant coating 100 to prevent plasma erosion.
The following details of the components, and fig. 3 is a schematic structural diagram of the components according to an embodiment of the present invention.
Referring to fig. 3, a component for a plasma reaction apparatus, the plasma reaction apparatus includes a reaction chamber, a plasma environment is disposed in the reaction chamber, the component is exposed to the plasma environment, and the component includes: a non-oxide substrate 200; the plasma-resistant coating 100, the plasma-resistant coating 100 is coated on the surface of the non-oxide substrate 200, the plasma-resistant coating 100 is a rare earth metal compound, and the plasma-resistant coating 100 and the non-oxide substrate 200 are transited through a saturated chemical bond 300.
In one embodiment, the saturated chemical bond 300 includes: si-O bond. In this way, a large amount of unsaturated dangling bonds Si-and O atoms on the surface of the non-oxide substrate 200 are combined into Si-O bonds to reach saturation, so that the transition of the chemical bonds 300 of the non-oxide substrate 200 and the plasma resistant coating at the interface is promoted, the bonding force of the plasma resistant coating 100 and the non-oxide substrate 200 is improved, and the bonding of the plasma resistant coating 100 and the non-oxide substrate 200 is more stable. Specifically, in order to avoid pollution of other metal elements to the plasma etching process, one or more of Si, siC, siO 2、Al2O3 are mainly selected as structural materials in the parts. For the non-oxide substrate 200, the formation of si—o bonds is a method of achieving chemical stabilization without introducing other contamination.
In one embodiment, the rare earth metal compound comprises one or more of an oxide, fluoride, or oxyfluoride of a rare earth element. One or more of the rare earth oxides, fluorides or oxyfluorides are selected depending on the process gas selected for the actual plasma etch process. In particular applications, when the F/O ratio in the process gas is high, a fluoride of a rare earth element may be selected as the primary material of the plasma resistant coating 200. When the F/O ratio in the process gas is low, an oxide of a rare earth element may be selected as the main material of the plasma-resistant coating 200.
In one embodiment, the rare earth elements in the rare earth metal compound include: y, sc, la, ce, pr, nd, eu, gd, tb, dy, ho, er, tm, yb or Lu. The rare earth element can refine and compact the structure of the infiltration layer or the coating, which is one of the important reasons for improving the mechanical property and the oxidation resistance and corrosion resistance of the modified layer. The plasma-resistant protective coating composed of the rare earth element oxide, fluoride or oxyfluoride can form a compact film layer, so that parts in an etching cavity can be well protected.
In one embodiment, the materials of the non-oxide substrate 200 include: one or more of silicon, silicon carbide, or silicon nitride. The silicon material has excellent properties such as unidirectional conductive property, thermosensitive property, photoelectric property, doping property and the like, and is an important integrated circuit base material widely applied worldwide.
FIG. 4 is a process flow diagram of forming a plasma resistant coating on a component provided by an embodiment of the invention.
Referring to fig. 4, a method for forming a plasma resistant coating on a component includes: providing a non-oxide substrate; carrying out saturation treatment on the surface of the non-oxide substrate to form saturated chemical bonds on the surface of the non-oxide substrate; after formation of saturated chemical bonds, a plasma resistant coating is applied to the surface of the non-oxide substrate. In this way, a large number of atoms are introduced to the surface of the non-oxide substrate, so that a large number of saturated chemical bonds are formed on the surface of the non-oxide substrate, and then a plasma-resistant coating is coated on the surface of the non-oxide substrate, so that stable structural transition of the non-oxide substrate and the plasma-resistant coating near an interface is realized, and the bonding force between the interfaces is increased. When the plasma-resistant coating coated by the method is subjected to cyclic thermal shock of temperature rise and temperature reduction in the plasma etching reaction cavity, a saturated chemical bond transition is formed between the interface of the non-oxide substrate and the plasma-resistant coating, so that the bonding strength of the plasma-resistant coating and the non-oxide substrate is enhanced, and microcracks of the plasma-resistant coating and the non-oxide substrate at the interface can be effectively prevented from being generated, expanded and falling off.
Specifically, when the surface saturation treatment and the plasma-resistant coating process are performed on the non-oxide substrate, the plasma-resistant coating is applied immediately after the surface saturation treatment. In this way, the pollution caused by the adsorption of other impurities (such as C, H 2 O molecules and the like) on the surface of the non-oxide substrate after the saturation treatment can be avoided, so that the coating effect of the plasma-resistant coating is affected.
In one embodiment, the saturation processing method includes: one or more of high temperature oxidation, oxygen-containing plasma treatment, or oxygen-containing ion implantation. And (3) carrying out high-temperature oxidation on the non-oxide substrate, introducing a large number of O atoms on the surface of the non-oxide substrate to form saturated chemical bonds, and protecting the non-oxide substrate from being corroded by plasma. Oxygen-containing plasma treatment is performed on a non-oxide substrate in a plasma containing oxygen atoms. The energy of the plasma is transferred to molecules and atoms on the surface of the non-oxide substrate when the plasma is impacted with the surface of the non-oxide substrate, so that a large number of O atoms are introduced to the surface of the non-oxide substrate to form saturated chemical bonds, and the non-oxide substrate is protected from being eroded by the plasma. Ion implantation ensures high doping uniformity over a large area and the bonding of the surface of the non-oxide substrate to the large number of O atoms introduced is extremely tight.
In one embodiment, the plasma in the oxygen-containing plasma treatment comprises: oxygen plasma or ozone plasma. The saturation treatment process employs a strong oxidizing plasma to bombard the non-oxide substrate prior to the selected coating process. In specific application, O 3 has strong oxidizing property, so that the O 3 is easier to form bond with Si-bond of dangling bond on the surface, and ozone plasma is selected for treating the non-oxide substrate in oxygen-containing plasma treatment. In practical applications, oxygen-containing plasma treatment may be used to treat non-oxide substrates.
In one embodiment, the coating process is one or more of physical vapor deposition, chemical vapor deposition, or atomic layer deposition. These coating methods can form plasma-resistant coatings on the parts on the basis of the invention to avoid plasma corrosion of the parts.
Physical vapor deposition (Physical Vapor Deposition, abbreviated as PVD) is a method of vaporizing a coating material by physical means (e.g., evaporation, sputtering, etc.), and depositing a film on the surface of a component. The PVD process is simple, environment-friendly, low in consumption, uniform and compact in film formation, and strong in binding force with the surfaces of the parts.
Materials that can be deposited by atomic layer deposition (Atomic Layer Deposition, ALD) include: oxides, nitrides, fluorides, etc., and whose deposition parameters are highly controllable (thickness, composition, and structure), facilitate control of saturated chemical bond transitions at the surface of the non-oxide substrate 200.
Chemical vapor deposition (Chemical Vapor Deposition, CVD for short) is a method of growing solid substances from vapor phase by chemical reaction. Typically CVD uses high temperature or other activation methods to produce the desired film by chemical reaction.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.
Claims (10)
1. A component for use in a plasma reaction apparatus, the plasma reaction apparatus comprising a reaction chamber, wherein a plasma environment is within the reaction chamber, the component being exposed to the plasma environment, the component comprising:
A non-oxide substrate, which is a silicon substrate, and is subjected to saturation treatment to introduce oxygen atoms on the surface of the non-oxide substrate, thereby forming saturated chemical bonds;
the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, the plasma-resistant coating and the non-oxide substrate are transited through the saturated chemical bond, and the saturated chemical bond comprises: si-O bond.
2. The component for use in a plasma reactor apparatus as claimed in claim 1, wherein the rare earth metal compound comprises one or more of an oxide, fluoride or oxyfluoride of a rare earth metal element.
3. The component part for use in a plasma reaction apparatus according to claim 1, wherein the rare earth metal element in the rare earth metal compound comprises: y, sc, la, ce, pr, nd, eu, gd, tb, dy, ho, er, tm, yb or Lu.
4. A plasma processing apparatus, comprising:
a reaction chamber in which a plasma environment is formed;
A component part for use in a plasma reaction apparatus as claimed in any one of claims 1 to 3, said component part being exposed to said plasma environment.
5. The plasma processing apparatus according to claim 4, wherein the plasma reaction apparatus is an inductively coupled plasma reaction apparatus, and the component comprises: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulating ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
6. The plasma processing apparatus according to claim 4, wherein the plasma reaction apparatus is a capacitively coupled plasma reaction apparatus, and the component part includes: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
7. A method of forming a plasma resistant coating on a component as claimed in any one of claims 1 to 3, comprising:
providing a non-oxide substrate, wherein the non-oxide substrate is a silicon substrate;
Carrying out saturation treatment on the surface of the non-oxide substrate to introduce oxygen atoms on the surface of the non-oxide substrate and form saturated chemical bonds on the surface of the non-oxide substrate, wherein the saturated chemical bonds comprise: si-O bond;
after the saturated chemical bond is formed, the plasma resistant coating is coated on the surface of the non-oxide substrate.
8. The method of forming a plasma resistant coating on a component as recited in claim 7, wherein the saturation treatment method comprises: one or more of high temperature oxidation, oxygen-containing plasma treatment, or oxygen-containing ion implantation.
9. The method of forming a plasma resistant coating for a component as recited in claim 8, wherein the plasma in the oxygen containing plasma treatment comprises: oxygen plasma or ozone plasma.
10. The method of forming a plasma resistant coating on a component as recited in claim 7, wherein the method of applying the plasma resistant coating to the surface of the non-oxide substrate is one or more of physical vapor deposition, chemical vapor deposition, or atomic layer deposition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010432447.1A CN113707526B (en) | 2020-05-20 | 2020-05-20 | Component, method for forming plasma-resistant coating and plasma reaction device |
| TW110110061A TWI807281B (en) | 2020-05-20 | 2021-03-19 | Component, method for forming plasma-resistant coating, and plasma reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010432447.1A CN113707526B (en) | 2020-05-20 | 2020-05-20 | Component, method for forming plasma-resistant coating and plasma reaction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113707526A CN113707526A (en) | 2021-11-26 |
| CN113707526B true CN113707526B (en) | 2024-05-24 |
Family
ID=78645729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010432447.1A Active CN113707526B (en) | 2020-05-20 | 2020-05-20 | Component, method for forming plasma-resistant coating and plasma reaction device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113707526B (en) |
| TW (1) | TWI807281B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478214A (en) * | 2000-11-30 | 2004-02-25 | �Ҵ���˾ | Improving stability of ion beam generated alignment layers by surface modification |
| CN101030524A (en) * | 2005-10-21 | 2007-09-05 | 信越化学工业株式会社 | Corrosion resistant multilayer member |
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| CN102741452A (en) * | 2009-10-27 | 2012-10-17 | 西尔科特克公司 | Chemical vapor deposition coating, article, and method |
| TW201348500A (en) * | 2012-05-31 | 2013-12-01 | Lin Hui Zhen | Method of using chemical bonding to form compound epitaxial layer and epitaxial product |
| CN105247662A (en) * | 2013-06-20 | 2016-01-13 | 应用材料公司 | Plasma erosion resistant rare-earth oxide based thin film coatings |
| CN106086789A (en) * | 2016-06-30 | 2016-11-09 | 上海交通大学 | Deposited the boundary layer method of transparent conductive film in surface of polyester by magnetron sputtering |
| CN106282934A (en) * | 2016-08-31 | 2017-01-04 | 广东欧珀移动通信有限公司 | Surface treatment method |
| CN106435504A (en) * | 2016-12-02 | 2017-02-22 | 赫得纳米科技(昆山)有限公司 | Method for plating fingerprint resisting film on surface of aluminum alloy |
| CN106676494A (en) * | 2017-01-18 | 2017-05-17 | 上海交通大学 | Method capable of improving corrosion resistance of nickel-aluminium bronze |
| CN108977782A (en) * | 2018-07-30 | 2018-12-11 | 杭州电子科技大学 | It is a kind of to consolidate durable hydrophobic coating and preparation method thereof, application for a long time |
| CN109913801A (en) * | 2019-04-24 | 2019-06-21 | 苏州大学 | The preparation method of matrix surface plasmaassisted laser texturing PVD coating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9945036B2 (en) * | 2011-03-22 | 2018-04-17 | General Electric Company | Hot corrosion-resistant coatings and components protected therewith |
| CN112969816A (en) * | 2018-10-04 | 2021-06-15 | 弗萨姆材料美国有限责任公司 | Compositions for high temperature atomic layer deposition of high quality silicon oxide films |
-
2020
- 2020-05-20 CN CN202010432447.1A patent/CN113707526B/en active Active
-
2021
- 2021-03-19 TW TW110110061A patent/TWI807281B/en active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478214A (en) * | 2000-11-30 | 2004-02-25 | �Ҵ���˾ | Improving stability of ion beam generated alignment layers by surface modification |
| CN101030524A (en) * | 2005-10-21 | 2007-09-05 | 信越化学工业株式会社 | Corrosion resistant multilayer member |
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN102741452A (en) * | 2009-10-27 | 2012-10-17 | 西尔科特克公司 | Chemical vapor deposition coating, article, and method |
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| TW201348500A (en) * | 2012-05-31 | 2013-12-01 | Lin Hui Zhen | Method of using chemical bonding to form compound epitaxial layer and epitaxial product |
| CN105247662A (en) * | 2013-06-20 | 2016-01-13 | 应用材料公司 | Plasma erosion resistant rare-earth oxide based thin film coatings |
| CN106086789A (en) * | 2016-06-30 | 2016-11-09 | 上海交通大学 | Deposited the boundary layer method of transparent conductive film in surface of polyester by magnetron sputtering |
| CN106282934A (en) * | 2016-08-31 | 2017-01-04 | 广东欧珀移动通信有限公司 | Surface treatment method |
| CN106435504A (en) * | 2016-12-02 | 2017-02-22 | 赫得纳米科技(昆山)有限公司 | Method for plating fingerprint resisting film on surface of aluminum alloy |
| CN106676494A (en) * | 2017-01-18 | 2017-05-17 | 上海交通大学 | Method capable of improving corrosion resistance of nickel-aluminium bronze |
| CN108977782A (en) * | 2018-07-30 | 2018-12-11 | 杭州电子科技大学 | It is a kind of to consolidate durable hydrophobic coating and preparation method thereof, application for a long time |
| CN109913801A (en) * | 2019-04-24 | 2019-06-21 | 苏州大学 | The preparation method of matrix surface plasmaassisted laser texturing PVD coating |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113707526A (en) | 2021-11-26 |
| TW202144598A (en) | 2021-12-01 |
| TWI807281B (en) | 2023-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101177333B1 (en) | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components | |
| JP4996868B2 (en) | Plasma processing apparatus and plasma processing method | |
| US11373882B2 (en) | Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide | |
| US8941969B2 (en) | Single-body electrostatic chuck | |
| US7696117B2 (en) | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas | |
| US8034734B2 (en) | Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus | |
| TW472289B (en) | Diamond coated parts in a plasma reactor | |
| US10612121B2 (en) | Plasma resistant coating with tailorable coefficient of thermal expansion | |
| JP2002338388A (en) | Member coated with diamond | |
| US11047035B2 (en) | Protective yttria coating for semiconductor equipment parts | |
| US7090932B2 (en) | Plasma resistant member | |
| CN113707526B (en) | Component, method for forming plasma-resistant coating and plasma reaction device | |
| CN114256047B (en) | Semiconductor component, coating forming method and plasma reaction apparatus | |
| CN214099576U (en) | Semiconductor component and plasma processing apparatus | |
| CN214175968U (en) | Semiconductor component and plasma processing apparatus | |
| CN213340283U (en) | Semiconductor component and plasma processing apparatus | |
| TW202206624A (en) | Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating The application of the semiconductor components in advanced manufacturing processes can reduce the problem of particle contamination | |
| JP4623794B2 (en) | Alumina corrosion resistant member and plasma apparatus | |
| CN113539771B (en) | Component, method for forming coating on surface of component, and plasma reaction device | |
| CN114078679B (en) | Semiconductor component, composite coating forming method and plasma reaction device | |
| CN114277340B (en) | Component, method for forming plasma-resistant coating, and plasma reaction apparatus | |
| US20220041508A1 (en) | Ceramic material with high thermal shock resistance and high erosion resistance | |
| KR20240042060A (en) | YTTRIUM ALUMINUM PEROVSKITE (YAP)-based coatings for semiconductor processing chamber components | |
| CN114639584A (en) | Semiconductor component, plasma processing apparatus, and method of forming composite coating | |
| KR20230001692A (en) | Electrostatic chuck, electrostatic chuck heater and semiconductor holding device comprising the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |