CN113707526A - Component, method for forming plasma-resistant coating and plasma reaction device - Google Patents
Component, method for forming plasma-resistant coating and plasma reaction device Download PDFInfo
- Publication number
- CN113707526A CN113707526A CN202010432447.1A CN202010432447A CN113707526A CN 113707526 A CN113707526 A CN 113707526A CN 202010432447 A CN202010432447 A CN 202010432447A CN 113707526 A CN113707526 A CN 113707526A
- Authority
- CN
- China
- Prior art keywords
- plasma
- resistant coating
- oxide substrate
- component
- reactor apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention is applicable to the technical field of semiconductors, and discloses a part used in a plasma reaction device, a method for forming a plasma-resistant coating on the part and the plasma reaction device. A component for use in a plasma reactor apparatus, the plasma reactor apparatus comprising a reaction chamber, a plasma environment within the reaction chamber, the component exposed to the plasma environment, the component comprising: a non-oxide substrate; the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are in transition through saturated chemical bonds. The part provided by the invention realizes transition at the interface between the non-oxide substrate and the plasma-resistant coating through a saturated chemical bond, reduces the risk of falling off of the plasma-resistant coating, and prolongs the service life of the plasma-resistant coating.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a part, a method for forming a plasma-resistant coating and a plasma reaction device.
Background
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) are excited by Radio Frequency (RF) excitation to form a plasma. The plasmas have physical bombardment effect and chemical reaction with the surface of the wafer after the action of an electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, so that the wafer with a specific structure is etched.
However, in the plasma etching process, a large amount of heat is released in the physical bombardment and chemical reaction processes, so that the temperature of the cavity is continuously increased; in addition, after the plasma etching process is finished, the heat is taken away due to the cooling effect of the cooler, so that the temperature of the chamber is reduced. For components within the etch chamber, a plasma resistant coating (e.g., Y) is typically applied2O3Coatings) to protect the components from corrosion. Therefore, the plasma-resistant coating coated on the part is in a thermal cycle impact environment with continuous temperature rise and temperature drop. Due to the continuous accumulation of thermal stress in the service process, the phenomena of generation, expansion, cracking, peeling and the like of microcracks of the plasma-resistant coating can be caused, and the serious accidents of failure of the protection function of the plasma-resistant coating, corrosion of internal parts and the like are caused. This phenomenon is particularly serious for parts that are close to the wafer. On one hand, the wafer is closer to the wafer, so that the thermal fluctuation and the plasma corrosion effect are greater; on the other hand, in order to avoid additional metal contamination, these parts are generally made of non-oxide materials, and the plasma-resistant corrosion-resistant coating has a weak bonding force with the non-oxide parts, which is more likely to cause the separation of the plasma-resistant coating from the non-oxide substrate.
How to effectively reduce the thermal stress accumulation of the plasma-resistant coating on the surface of the non-oxide substrate, avoid the phenomena of microcrack generation, expansion, cracking, peeling and the like, and have important significance for improving the environmental stability of the etching cavity, prolonging the service life of parts and reducing the operation cost of key parts of the etching cavity.
Disclosure of Invention
The first purpose of the invention is to provide a part, which aims to solve the technical problem that the plasma-resistant coating is easy to fall off from the non-oxide substrate.
In order to achieve the purpose, the invention provides the following scheme: a component for use in a plasma reactor apparatus, the plasma reactor apparatus comprising a reaction chamber, a plasma environment within the reaction chamber, the component exposed to the plasma environment, the component comprising:
a non-oxide substrate;
the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are in transition through saturated chemical bonds. Therefore, the surface saturation treatment is carried out on the non-oxide substrate, the chemical bond transition of the non-oxide substrate and the plasma-resistant coating on the interface is promoted, the binding force of the plasma-resistant coating and the non-oxide substrate is improved, the thermal shock resistance of the plasma-resistant coating is further improved, the risk of cracking or even falling of the plasma-resistant coating is reduced, and the service life of the plasma-resistant coating is prolonged.
Optionally, the saturated chemical bond comprises: a Si-O bond. Therefore, a large number of unsaturated dangling bonds Si-and O atoms on the surface of the non-oxide substrate are combined to form Si-O bonds to reach saturation, chemical bond transition of the non-oxide substrate and the plasma-resistant coating on an interface is promoted, the bonding force of the plasma-resistant coating and the non-oxide substrate is improved, and the bonding force of the plasma-resistant coating and the non-oxide substrate is stronger.
Optionally, the rare earth metal compound comprises one or more of an oxide, fluoride or oxyfluoride of a rare earth metal element. Thus, one or more of the oxide, fluoride or oxyfluoride of the rare earth metal element is selected correspondingly according to the selected process gas in the actual plasma etching process. In specific application, when the F/O ratio in the process gas is higher, the fluoride of the rare earth metal element can be selected as the main material of the plasma-resistant coating; when the F/O ratio in the process gas is low, the oxide of the rare earth metal element can be selected as the main material of the plasma-resistant coating.
Alternatively, the rare earth metal elements in the rare earth metal compound include: one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu. Thus, the plasma resistant protective coating formed by one or more of the oxides, fluorides or oxyfluorides of the rare earth elements can form a compact film layer, thereby well protecting parts in an etching cavity and preventing a non-oxide substrate from being corroded.
Optionally, the material of the non-oxide substrate comprises: one or more of silicon, silicon carbide or silicon nitride. Specifically, the silicon material has excellent performances such as unidirectional conductivity, thermal sensitivity, photoelectric properties and doping properties, and is an important integrated circuit base material widely used globally.
A second object of the present invention is to provide a plasma processing apparatus comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
as with the components described above, the components are exposed to a plasma environment. Since the reaction chamber in the plasma processing apparatus is in a plasma environment and the plasma has strong corrosiveness, in order to prevent the surface of the non-oxide substrate from being corroded by the plasma, it is necessary to coat the surface of the non-oxide substrate with a plasma-resistant coating.
Optionally, the plasma reaction device is an inductively coupled plasma reaction device, and the parts include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. In particular, a non-oxide substrate refers to a body of a component, the surface of which needs to be coated with a plasma-resistant coating to prevent plasma erosion.
Optionally, the plasma reaction device is a capacitively coupled plasma reaction device, and the parts include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. In particular, the surface of the non-oxide substrate needs to be coated with a plasma resistant coating to prevent plasma erosion.
A third object of the present invention is to provide a method for forming a plasma-resistant coating on the above-mentioned component, comprising:
providing a non-oxide substrate;
carrying out saturation treatment on the surface of the non-oxide substrate to form a saturated chemical bond on the surface of the non-oxide substrate;
after the formation of the saturated chemical bonds, a plasma resistant coating is applied to the surface of the non-oxide substrate. Thus, when the plasma-resistant coating coated by the method is subjected to cyclic thermal shock of temperature rise and temperature drop in a plasma etching reaction cavity, because saturated chemical bond transition is formed between the interfaces of the non-oxide substrate and the plasma-resistant coating, the bonding strength of the plasma-resistant coating and the non-oxide substrate is enhanced, and the generation, expansion and falling of microcracks at the interfaces of the plasma-resistant coating and the non-oxide substrate can be effectively prevented.
Optionally, the saturation processing method includes: one or more of high temperature oxidation, oxygen-containing plasma treatment, or oxygen-containing ion implantation. In this way, the bonding force of the plasma-resistant coating and the non-oxide substrate is increased by introducing a large number of O atoms on the surface of the non-oxide substrate, so that the saturated chemical bonds between the surface of the non-oxide substrate and the plasma-resistant coating are transited.
Optionally, the plasma in the oxygen-containing plasma treatment comprises: oxygen plasma or ozone plasma. Thus, the saturation treatment process bombards the non-oxide substrate with a plasma containing strong oxidizing species before the selected coating process is performed.
Optionally, the coating method is one or more of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method. In particular, the coating methods can form a plasma-resistant coating on the surface of a non-oxide substrate on the basis of the invention so as to avoid the corrosion of parts by plasma.
The invention has the beneficial effects that:
in the parts for the plasma reaction device, provided by the embodiment of the invention, the plasma-resistant coating is coated on the surface of the non-oxide substrate, and a large number of unsaturated dangling bonds on the surface of the non-oxide substrate are combined with atoms to form chemical bonds to reach saturation, so that the non-oxide substrate and the plasma-resistant coating form a stable structure near an interface and are transited, the bonding force between the plasma-resistant coating and the non-oxide substrate is improved, the thermal shock resistance of the plasma-resistant coating is further improved, and the risk of cracking and falling of the plasma-resistant coating is reduced, therefore, the service life of the plasma-resistant coating is favorably prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic diagram of a plasma resistant coating and a silicon substrate;
FIG. 2 is a schematic structural diagram of a plasma reactor according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of components provided in an embodiment of the present invention;
FIG. 4 is a flow chart of a process for forming a plasma-resistant coating on a component according to an embodiment of the present invention.
Reference numerals:
10. a plasma resistant coating; 20. a silicon substrate;
301. a bushing; 302. a gas nozzle; 303. an electrostatic chuck; 304. a focus ring; 305. an insulating ring; 306. a cover ring; 307. a substrate holding frame; 308. a ceramic cover plate; 309. a reaction chamber;
100. a plasma resistant coating; 200. a non-oxide substrate; 300. chemical bond.
Detailed Description
As shown in fig. 1, fig. 1 is a schematic structural view of a plasma-resistant coating 10 and a silicon substrate 20. Generally, the non-oxide substrate is formed of Si, SiC, or the like. Taking the silicon substrate 20 as an example, in the interior of the silicon substrate 20, the 4 coordinated Si atoms form a saturated coordination structure, and form Si-Si bonds with each other, so that the bonding force is strong. On the surface of the silicon substrate 20, on the other hand, the peripheral O atoms are not sufficiently coordinated, so that the surface Si atoms contain a large number of Si — dangling bonds (unsaturated bonds). When plasma-resistant coating 10 is applied to the surface of silicon substrate 20 having a large number of unsaturated bonds on the surface (e.g., Y)2O3Coating) due to Si and Y2O3Lattice constant mismatch of (Si lattice constant)
Y2O3Lattice constant of
) Only a small proportion of these Si-unsaturated bonds being able to react with Y2O3Bonded, thereby forming a bond between silicon substrate 20 and Y2O3A large amount of unsaturated bonds still exist at the interface between the coatings. Y coated in this way2O3When the coating is subjected to cyclic thermal shock of temperature rise and temperature drop in the etching cavity, the unsaturated bonds can be easily in Y2O3The interface between the coating and the silicon substrate 20 is broken to form micro-cracks, which further propagate along the grain boundaries, and the plasma-resistant coating 10 is peeled off.
In order to solve the technical problems, the invention provides a part, a method for forming a plasma-resistant coating on the part and a plasma reaction device. Specifically, a spare part for among plasma reaction unit, plasma reaction unit includes the reaction chamber, is the plasma environment in the reaction chamber, and spare part exposes in the plasma environment, and spare part includes: a non-oxide substrate; the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are in transition through saturated chemical bonds.
Before the coating process of the plasma-resistant coating, the part provided by the invention carries out surface saturation treatment on the non-oxide substrate, promotes the chemical bond transition between the non-oxide substrate and the plasma-resistant coating at the interface, improves the binding force of the plasma-resistant coating and the non-oxide substrate, further improves the thermal shock resistance of the plasma-resistant coating, reduces the risks of cracking and falling off of the plasma-resistant coating, and prolongs the service life of the plasma-resistant coating.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
FIG. 2 is a schematic structural diagram of a plasma reactor according to the present invention.
Referring to fig. 2, the plasma reaction apparatus includes: a reaction chamber 309, wherein a plasma environment is arranged in the reaction chamber 309; and (c) a component exposed to a plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base, wherein the base is used for bearing a substrate W to be processed, and the plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the component body from being corroded by plasma, it is necessary to coat the surface of the component body with the plasma-resistant coating 100.
In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: a liner 301, a gas nozzle 302, an electrostatic chuck 303, a focus ring 304, an insulating ring 305, a cover ring 306, a substrate holding frame 307, a ceramic cover plate 308, or a gas connection flange (not shown). The surfaces of these components need to be coated with a plasma resistant coating 100 to prevent plasma erosion.
In a specific application, the plasma reaction device may also be a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame. The surfaces of these components need to be coated with a plasma resistant coating 100 to prevent plasma erosion.
The components are explained in detail below, and fig. 3 is a schematic structural diagram of the components according to the embodiment of the present invention.
Referring to fig. 3, a component for use in a plasma reaction apparatus, the plasma reaction apparatus including a reaction chamber, a plasma environment inside the reaction chamber, the component exposed to the plasma environment, the component includes: a non-oxide substrate 200; the plasma-resistant coating 100, the plasma-resistant coating 100 is coated on the surface of the non-oxide substrate 200, the plasma-resistant coating 100 is a rare earth metal compound, and the plasma-resistant coating 100 and the non-oxide substrate 200 are transited through a saturated chemical bond 300.
In one embodiment, the saturated chemical bond 300 includes: a Si-O bond. Thus, a large number of unsaturated dangling bonds Si-and O atoms on the surface of the non-oxide substrate 200 are combined to form Si-O bonds to reach saturation, the transition of chemical bonds 300 between the non-oxide substrate 200 and the plasma-resistant coating at the interface is promoted, the bonding force between the plasma-resistant coating 100 and the non-oxide substrate 200 is improved, and the bonding between the plasma-resistant coating 100 and the non-oxide substrate 200 is more stable. Specifically, to avoid the contamination of other metal elements to the plasma etching process, the structural materials of the components are mainly selected from Si, SiC and SiO2、Al2O3One or more of (a). For the non-oxide substrate 200, forming Si-O bonds is a way to achieve chemical stability without introducing other contaminants.
In one embodiment, the rare earth metal compound comprises one or more of an oxide, fluoride or oxyfluoride of a rare earth element. One or more of the rare earth oxides, fluorides or oxyfluorides are selected according to the process gas selected in the actual plasma etching process. In particular applications, when the process gas has a high F/O ratio, a fluoride of a rare earth element may be selected as the primary material of the plasma-resistant coating 200. When the process gas has a low F/O ratio, an oxide of a rare earth element may be selected as the primary material of the plasma-resistant coating 200.
In one embodiment, the rare earth elements in the rare earth metal compound include: one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu. The rare earth element can refine and compact the texture of the diffusion coating or the coating, which is one of the important reasons for improving the mechanical property, oxidation resistance and corrosion resistance of the modified layer. The plasma-resistant protective coating consisting of the oxide, the fluoride or the oxyfluoride of the rare earth elements can form a compact film layer, so that parts in the etching cavity can be well protected.
In one embodiment, the materials of the non-oxide substrate 200 include: one or more of silicon, silicon carbide or silicon nitride. The silicon material has excellent performances such as unidirectional conductive property, heat-sensitive property, photoelectric property and doping property, and is an important integrated circuit base material with wide global application.
FIG. 4 is a flow chart of a process for forming a plasma-resistant coating on a component according to an embodiment of the present invention.
Referring to fig. 4, a method for forming a plasma-resistant coating on a component includes: providing a non-oxide substrate; carrying out saturation treatment on the surface of the non-oxide substrate to form a saturated chemical bond on the surface of the non-oxide substrate; after the formation of the saturated chemical bonds, a plasma resistant coating is applied to the surface of the non-oxide substrate. Therefore, a large number of atoms are introduced to the surface of the non-oxide substrate, so that a large number of saturated chemical bonds are formed on the surface of the non-oxide substrate, and then the plasma-resistant coating is coated on the surface of the non-oxide substrate, so that stable structure transition of the non-oxide substrate and the plasma-resistant coating near an interface is realized, and the bonding force between the interfaces is increased. When the plasma-resistant coating coated by the method is subjected to cyclic thermal shock of temperature rise and temperature reduction in a plasma etching reaction cavity, due to the fact that saturated chemical bond transition is formed between the interface of the non-oxide substrate and the plasma-resistant sub-coating, the bonding strength of the plasma-resistant coating and the non-oxide substrate is enhanced, and microcracks of the plasma-resistant coating and the non-oxide substrate at the interface can be effectively prevented from being generated, expanded and shed.
Specifically, when the non-oxide substrate is subjected to the surface saturation treatment and the plasma-resistant coating application process, the plasma-resistant coating is applied immediately after the surface saturation treatment. In this way, other impurities (e.g., C, H) may be avoided2O molecule, etc.) for non-oxidation after saturation treatmentThe surface of the substrate absorbs the introduced pollution, thereby influencing the coating effect of the plasma-resistant coating.
In one embodiment, a saturation processing method includes: one or more of high temperature oxidation, oxygen-containing plasma treatment, or oxygen-containing ion implantation. And carrying out high-temperature oxidation on the non-oxide substrate, and introducing a large amount of O atoms on the surface of the non-oxide substrate to form saturated chemical bonds so as to protect the non-oxide substrate from being eroded by plasma. Oxygen-containing plasma treatments are applied to non-oxide substrates in a plasma containing oxygen atoms. The energy of the plasma is transferred to molecules and atoms on the surface of the non-oxide substrate when the plasma collides with the surface of the non-oxide substrate, so that a large number of O atoms are introduced to the surface of the non-oxide substrate to form saturated chemical bonds, and the non-oxide substrate is protected from being eroded by the plasma. Ion implantation ensures high doping uniformity over a large area and the surface of the non-oxide substrate is extremely close to the incorporation of a large number of O atoms.
In one embodiment, the oxygen-containing plasma processing plasma comprises: oxygen plasma or ozone plasma. The saturation treatment process employs a strong oxidizing plasma to bombard the non-oxide substrate prior to the selected coating process. In a specific application, due to O3Has strong oxidizing property, is easier to be combined with Si-of the surface dangling bond into bond, and selects ozone plasma to process the non-oxide substrate in the oxygen-containing plasma treatment. In practice, oxygen plasma may be used to treat the non-oxide substrate.
In one embodiment, the coating method is one or more of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method. These coating methods can form plasma-resistant coatings on the parts based on the present invention to prevent the parts from being corroded by plasma.
Physical Vapor Deposition (PVD) is a method of vaporizing a coating material by Physical methods (such as evaporation and sputtering) to deposit a film on the surface of a component. The PVD process is simple, environment-friendly, pollution-free, low in material consumption, uniform and compact in film forming and strong in binding force with the surface of a part.
Materials that can be deposited by Atomic Layer Deposition (ALD) include: oxide, nitride, fluoride, etc., and the deposition parameters are highly controllable (thickness, composition and structure) to facilitate control of saturated chemical bond transitions at the surface of the non-oxide substrate 200.
Chemical Vapor Deposition (CVD) is a method of growing a solid substance from a gas phase by using a Chemical reaction. CVD typically utilizes high temperatures or other activation methods to form the desired film layer by chemical reaction.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (12)
1. A component for use in a plasma reactor apparatus, the plasma reactor apparatus comprising a reaction chamber, a plasma environment within the reaction chamber, the component being exposed to the plasma environment, the component comprising:
a non-oxide substrate;
the plasma-resistant coating is coated on the surface of the non-oxide substrate, the plasma-resistant coating is a rare earth metal compound, and the plasma-resistant coating and the non-oxide substrate are in transition through saturated chemical bonds.
2. The component for use in a plasma reactor apparatus of claim 1, wherein said saturated chemical bond comprises: a Si-O bond.
3. The component for use in a plasma reactor apparatus of claim 1, wherein the rare earth metal compound comprises one or more of an oxide, fluoride, or oxyfluoride of a rare earth metal element.
4. The component for use in a plasma reactor apparatus according to claim 1, wherein the rare earth element in the rare earth metal compound comprises: one or more of Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
5. The component for use in a plasma reactor apparatus according to claim 1, wherein the material of the non-oxide substrate comprises: one or more of silicon, silicon carbide or silicon nitride.
6. A plasma processing apparatus, comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the component for use in a plasma reaction apparatus according to any one of claims 1 to 5, which is exposed to the plasma environment.
7. The plasma reactor apparatus of claim 6 wherein said plasma reactor apparatus is an inductively coupled plasma reactor apparatus, said components comprising: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
8. The plasma reactor apparatus as claimed in claim 6, wherein the plasma reactor apparatus is a capacitively coupled plasma reactor apparatus, and the semiconductor component includes: at least one of a showerhead, a gas distribution plate, an upper ground ring, a lower ground ring, a gas line, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a substrate holding frame.
9. A method of forming a plasma resistant coating for a component part according to any one of claims 1 to 5, comprising:
providing a non-oxide substrate;
performing saturation treatment on the surface of the non-oxide substrate to form a saturated chemical bond on the surface of the non-oxide substrate;
after the saturated chemical bond is formed, the plasma-resistant coating is applied to the surface of the non-oxide substrate.
10. The method of forming a plasma resistant coating for a component part according to claim 9, wherein the saturating process comprises: one or more of high temperature oxidation, oxygen-containing plasma treatment, or oxygen-containing ion implantation.
11. The method of forming a plasma-resistant coating for a component part of claim 10, wherein the plasma in the oxygen-containing plasma treatment comprises: oxygen plasma or ozone plasma.
12. The method of forming a plasma resistant coating for a component part according to claim 9, wherein the coating method is one or more of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010432447.1A CN113707526A (en) | 2020-05-20 | 2020-05-20 | Component, method for forming plasma-resistant coating and plasma reaction device |
| TW110110061A TWI807281B (en) | 2020-05-20 | 2021-03-19 | Component, method for forming plasma-resistant coating, and plasma reaction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010432447.1A CN113707526A (en) | 2020-05-20 | 2020-05-20 | Component, method for forming plasma-resistant coating and plasma reaction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113707526A true CN113707526A (en) | 2021-11-26 |
Family
ID=78645729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010432447.1A Pending CN113707526A (en) | 2020-05-20 | 2020-05-20 | Component, method for forming plasma-resistant coating and plasma reaction device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113707526A (en) |
| TW (1) | TWI807281B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478214A (en) * | 2000-11-30 | 2004-02-25 | �Ҵ���˾ | Improving stability of ion beam generated alignment layers by surface modification |
| CN101030524A (en) * | 2005-10-21 | 2007-09-05 | 信越化学工业株式会社 | Corrosion resistant multilayer member |
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| CN102741452A (en) * | 2009-10-27 | 2012-10-17 | 西尔科特克公司 | Chemical vapor deposition coating, article, and method |
| TW201348500A (en) * | 2012-05-31 | 2013-12-01 | Lin Hui Zhen | Method of using chemical bonding to form compound epitaxial layer and epitaxial product |
| CN105247662A (en) * | 2013-06-20 | 2016-01-13 | 应用材料公司 | Plasma erosion resistant rare-earth oxide based thin film coatings |
| CN106086789A (en) * | 2016-06-30 | 2016-11-09 | 上海交通大学 | Deposited the boundary layer method of transparent conductive film in surface of polyester by magnetron sputtering |
| CN106282934A (en) * | 2016-08-31 | 2017-01-04 | 广东欧珀移动通信有限公司 | Surface treatment method |
| CN106435504A (en) * | 2016-12-02 | 2017-02-22 | 赫得纳米科技(昆山)有限公司 | Method for plating fingerprint resisting film on surface of aluminum alloy |
| CN106676494A (en) * | 2017-01-18 | 2017-05-17 | 上海交通大学 | Method capable of improving corrosion resistance of nickel-aluminium bronze |
| CN108977782A (en) * | 2018-07-30 | 2018-12-11 | 杭州电子科技大学 | It is a kind of to consolidate durable hydrophobic coating and preparation method thereof, application for a long time |
| CN109913801A (en) * | 2019-04-24 | 2019-06-21 | 苏州大学 | The preparation method of matrix surface plasmaassisted laser texturing PVD coating |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9945036B2 (en) * | 2011-03-22 | 2018-04-17 | General Electric Company | Hot corrosion-resistant coatings and components protected therewith |
| US20210363639A1 (en) * | 2018-10-04 | 2021-11-25 | Versum Materials Us, Llc | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films |
-
2020
- 2020-05-20 CN CN202010432447.1A patent/CN113707526A/en active Pending
-
2021
- 2021-03-19 TW TW110110061A patent/TWI807281B/en active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1478214A (en) * | 2000-11-30 | 2004-02-25 | �Ҵ���˾ | Improving stability of ion beam generated alignment layers by surface modification |
| CN101030524A (en) * | 2005-10-21 | 2007-09-05 | 信越化学工业株式会社 | Corrosion resistant multilayer member |
| CN101241953A (en) * | 2007-02-07 | 2008-08-13 | 北京中科信电子装备有限公司 | Method for improving quality of reflection reduction film of single crystal silicon solar battery |
| CN102741452A (en) * | 2009-10-27 | 2012-10-17 | 西尔科特克公司 | Chemical vapor deposition coating, article, and method |
| CN102386277A (en) * | 2011-10-17 | 2012-03-21 | 浙江贝盛光伏股份有限公司 | Multi-coating technology |
| TW201348500A (en) * | 2012-05-31 | 2013-12-01 | Lin Hui Zhen | Method of using chemical bonding to form compound epitaxial layer and epitaxial product |
| CN105247662A (en) * | 2013-06-20 | 2016-01-13 | 应用材料公司 | Plasma erosion resistant rare-earth oxide based thin film coatings |
| CN106086789A (en) * | 2016-06-30 | 2016-11-09 | 上海交通大学 | Deposited the boundary layer method of transparent conductive film in surface of polyester by magnetron sputtering |
| CN106282934A (en) * | 2016-08-31 | 2017-01-04 | 广东欧珀移动通信有限公司 | Surface treatment method |
| CN106435504A (en) * | 2016-12-02 | 2017-02-22 | 赫得纳米科技(昆山)有限公司 | Method for plating fingerprint resisting film on surface of aluminum alloy |
| CN106676494A (en) * | 2017-01-18 | 2017-05-17 | 上海交通大学 | Method capable of improving corrosion resistance of nickel-aluminium bronze |
| CN108977782A (en) * | 2018-07-30 | 2018-12-11 | 杭州电子科技大学 | It is a kind of to consolidate durable hydrophobic coating and preparation method thereof, application for a long time |
| CN109913801A (en) * | 2019-04-24 | 2019-06-21 | 苏州大学 | The preparation method of matrix surface plasmaassisted laser texturing PVD coating |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI807281B (en) | 2023-07-01 |
| TW202144598A (en) | 2021-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101177333B1 (en) | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components | |
| US8247080B2 (en) | Coating structure and method | |
| JP5978236B2 (en) | Method for coating semiconductor processing equipment with protective film containing yttrium | |
| KR100934516B1 (en) | Plasma-resistant ceramic with controlled electrical resistivity | |
| US7696117B2 (en) | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas | |
| US9051219B2 (en) | Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide | |
| KR100994592B1 (en) | Processing apparatus for processing a substrate for semiconductor and liquid crystal display device | |
| JP2019069891A (en) | Method and apparatus for reducing erosion rate of surface exposed to halogen-containing plasma | |
| TW201504044A (en) | Plasma erosion resistant rare-earth oxide based thin film coatings | |
| WO2014099559A1 (en) | Single-body electrostatic chuck | |
| US7090932B2 (en) | Plasma resistant member | |
| CN113707526A (en) | Component, method for forming plasma-resistant coating and plasma reaction device | |
| CN213845216U (en) | Semiconductor component and plasma processing apparatus | |
| CN114256047B (en) | Semiconductor component, coating forming method and plasma reaction apparatus | |
| JP4623794B2 (en) | Alumina corrosion resistant member and plasma apparatus | |
| CN213340283U (en) | Semiconductor component and plasma processing apparatus | |
| CN114277340B (en) | Component, method for forming plasma-resistant coating, and plasma reaction apparatus | |
| CN113539771B (en) | Component, method for forming coating on surface of component, and plasma reaction device | |
| US11731907B2 (en) | Ceramic material with high thermal shock resistance and high erosion resistance | |
| TW202207304A (en) | Semiconductor part, composite coating layer formation method and plasma reaction device arranging a waterproof sacrificial layer on the surface of a plasma corrosion resistant coating layer | |
| JP4012714B2 (en) | Corrosion resistant material | |
| CN114520139A (en) | Semiconductor component, method for forming the same, and plasma processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |