TW202133219A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
TW202133219A
TW202133219A TW109144601A TW109144601A TW202133219A TW 202133219 A TW202133219 A TW 202133219A TW 109144601 A TW109144601 A TW 109144601A TW 109144601 A TW109144601 A TW 109144601A TW 202133219 A TW202133219 A TW 202133219A
Authority
TW
Taiwan
Prior art keywords
substrate
heating
processing apparatus
hot plate
unit
Prior art date
Application number
TW109144601A
Other languages
Chinese (zh)
Other versions
TWI826757B (en
Inventor
平井孝典
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202133219A publication Critical patent/TW202133219A/en
Application granted granted Critical
Publication of TWI826757B publication Critical patent/TWI826757B/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A substrate processing apparatus of the present invention can satisfactorily perform drying processing accompanied by pressure reduction and heating on warped substrates. In this way, the substrate processing apparatus 1, capable of drying the coating film F formed on the main surface of the substrate by heating the substrate S and reducing pressure of the surrounding space, includes: a chamber 10 having a processing space SP in which a substrate S can be housed in a horizontal posture; a support portion 32 provided in the processing space SP, which abuts against the bottom surface of the substrate S and supports the substrate S from below; a correction member 41 which partially abuts against the upper surface of the substrate S supported by the support portion 32 to correct the warpage of the substrate; a heating unit 20 provided in the processing space SP for heating the bottom surface of the substrate S supported by the support portion 32; and a pressure reducing unit 50 that reduces the pressure of the processing space SP.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明係關於一種基板處理裝置及基板處理方法，其使被形成於基板的塗佈膜乾燥。The present invention relates to a substrate processing apparatus and a substrate processing method that dry a coating film formed on a substrate.

作為半導體裝置之製造製程之一個製程，具有以下之處理：藉由將塗佈液塗佈於基板表面以形成塗佈膜並使其乾燥，而於基板表面形成阻膜、保護膜等之功能膜。迄今為止，作為此種乾燥處理，通常藉由專用裝置分別進行以下之處理(例如，參照日本專利特開2006-105524號公報(專利文獻1))：減壓乾燥處理，其對形成有塗佈膜的基板之周圍空間進行減壓以使溶劑成分揮發；及加熱乾燥處理，其將減壓處理後之基板加熱而使塗佈膜完全地乾燥。As a process of the manufacturing process of semiconductor devices, it has the following treatment: by applying a coating liquid on the surface of the substrate to form a coating film and then dry it, to form a functional film such as a resist film and a protective film on the surface of the substrate . Heretofore, as such a drying treatment, the following treatments are usually performed separately by a dedicated device (for example, refer to Japanese Patent Laid-Open No. 2006-105524 (Patent Document 1)): reduced-pressure drying treatment, which coats the formation The space around the substrate of the film is reduced in pressure to volatilize the solvent component; and a heat drying process, which heats the substrate after the reduced pressure process to completely dry the coating film.

此種之先前技術中存在有以下有待解決之課題：其需要於裝置之間搬送基板以致不能期待處理時間之縮短；及裝置之佔用面積增加等。關於該等課題，本案申請人已於之前揭示了一種技術(參照日本專利第5089288號公報(專利文獻2))，其可利用一個裝置執行減壓乾燥處理及加熱乾燥處理。There are the following problems to be solved in this prior art: it needs to transfer substrates between devices so that the processing time cannot be shortened; and the occupied area of the device increases. Regarding these issues, the applicant of this case has previously disclosed a technique (refer to Japanese Patent No. 5089288 (Patent Document 2)), which can perform a reduced-pressure drying process and a heat drying process with a single device.

於該裝置中，形成有塗佈膜的基板係在可對內部空間進行減壓的腔室內被保持為水平姿勢。然後，內部空間被減壓，並且藉由被設於腔室內的燈加熱器加熱基板以使塗佈膜乾燥。In this device, the substrate on which the coating film is formed is held in a horizontal posture in a chamber in which the internal space can be decompressed. Then, the internal space is decompressed, and the substrate is heated by a lamp heater provided in the chamber to dry the coating film.

(發明所欲解決之問題)(The problem to be solved by the invention)

近年來，被提供於此種處理的基板趨向於大型化。伴隨此，基板變得容易翹曲，以致難以進行均一之加熱處理。例如，於以晶圓級封裝(WLP：Wafer Level Packaging)或面板級封裝(PLP：Panel Level Packaging)等之製造形式所被製造的半導體封裝中，於玻璃基板上多層地組合有複數個半導體晶片及晶片間之配線等。其等之熱收縮率及熱膨脹率之差異量，大於僅積層有阻層等之半導體基板。因此，基板之翹曲成為明顯。 (解決問題之技術手段)In recent years, the substrates provided for such processing have tended to increase in size. Along with this, the substrate becomes easily warped, making it difficult to perform uniform heating treatment. For example, in a semiconductor package manufactured by a manufacturing method such as wafer level packaging (WLP: Wafer Level Packaging) or panel level packaging (PLP: Panel Level Packaging), a plurality of semiconductor chips are assembled in multiple layers on a glass substrate. And wiring between chips, etc. The difference between the thermal contraction rate and the thermal expansion rate is greater than that of a semiconductor substrate with a resist layer or the like laminated only. Therefore, the warpage of the substrate becomes obvious. (Technical means to solve the problem)

本發明係鑑於上述課題而完成者，本發明之目的在於提供一種基板處理技術，其即使對於含有翹曲的基板亦可良好地執行伴隨減壓及加熱的乾燥處理。The present invention was made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing technology that can perform drying processing accompanied by pressure reduction and heating well even for substrates containing warpage.

本發明之一個態樣中，一種基板處理裝置，其藉由基板之加熱及其周圍空間之減壓而使被形成於上述基板之主面的塗佈膜乾燥，且為了達成上述目的，該基板處理裝置具備有：腔室，其具有以水平姿勢可收納上述基板的處理空間；支撐部，其在上述處理空間內，抵接至上述基板之下面而自下方支撐上述基板；矯正構件，其部分地抵接至被上述支撐部所支撐的上述基板之上面，以矯正上述基板之翹曲；加熱部，其在上述處理空間內，對被上述支撐部所支撐的上述基板之下面進行加熱；及減壓部，其對上述處理空間進行減壓。In one aspect of the present invention, a substrate processing apparatus that dries a coating film formed on the main surface of the substrate by heating the substrate and reducing the pressure in the surrounding space, and in order to achieve the above object, the substrate The processing apparatus is provided with: a chamber having a processing space capable of accommodating the substrate in a horizontal posture; a support portion in the processing space that abuts against the bottom surface of the substrate and supports the substrate from below; and a correction member, part of it Ground abuts to the upper surface of the substrate supported by the support portion to correct the warpage of the substrate; a heating portion in the processing space, which heats the lower surface of the substrate supported by the support portion; and A decompression part that decompresses the above-mentioned processing space.

此外，本發明之另一個態樣中，一種基板處理方法，其係加熱基板且將其周圍空間減壓而使被形成於上述基板之主面的塗佈膜乾燥的基板處理方法，且為了達成上述目的，該基板處理方法係於在內部之處理空間內配置有加熱上述基板之加熱部的腔室內，使支撐部抵接至上述基板之下面，並且於上述加熱部之上方且與上述加熱部隔開既定之間隔支撐上述基板，使矯正構件部分地抵接至被上述支撐部所支撐的上述基板之上面以矯正上述基板之翹曲，對上述處理空間進行減壓，且藉由上述加熱部加熱上述基板而使上述塗佈膜乾燥。 In addition, in another aspect of the present invention, a substrate processing method is a substrate processing method that heats the substrate and depressurizes the surrounding space to dry the coating film formed on the main surface of the substrate, and in order to achieve For the above object, the substrate processing method is in a chamber in which a heating section for heating the substrate is arranged in an internal processing space, so that the supporting section abuts against the bottom of the substrate, and is above and above the heating section and in contact with the heating section. The substrate is supported at a predetermined interval, the correcting member is partly abutted on the upper surface of the substrate supported by the support portion to correct the warpage of the substrate, the processing space is reduced, and the heating portion The substrate is heated to dry the coating film.

於自基板之下面側加熱基板的構成中，若於基板具有翹曲，則無法進行均一之加熱，其存在有於乾燥後之塗佈膜之品質產生不均之虞。在如上述所構成的發明中，藉由矯正構件抵接至被支撐部自下面側所支撐的基板之上面，自上下兩面保持基板，當於基板具有翹曲時該翹曲被矯正。因此，即使為具有翹曲的基板，亦可抑制對基板表面之塗佈膜的加熱不均，可良好地進行塗佈膜之乾燥。 (對照先前技術之功效)In the structure of heating the substrate from the lower side of the substrate, if the substrate has warpage, uniform heating cannot be performed, which may cause unevenness in the quality of the coating film after drying. In the invention constituted as described above, the correcting member abuts on the upper surface of the substrate supported by the supported portion from the lower side, and the substrate is held from the upper and lower surfaces. When the substrate has a warpage, the warpage is corrected. Therefore, even if it is a board|substrate with a curvature, the heating unevenness of the coating film on the surface of a board|substrate can be suppressed, and drying of a coating film can be performed favorably. (Compared to the effect of the previous technology)

如上述，於本發明中，可藉由矯正構件抵接至基板之上面以矯正翹曲。因此，即使對於含有翹曲的基板，亦可良好地執行伴隨減壓及加熱的乾燥處理。As described above, in the present invention, the warpage can be corrected by abutting the correcting member to the upper surface of the substrate. Therefore, even for a substrate containing warpage, the drying process accompanied by pressure reduction and heating can be performed well.

圖1為顯示本發明之基板處理裝置之一實施形態之圖。更具體而言，圖1為將顯示本發明之一實施形態之基板處理裝置1之主要部分之構成的剖視圖、及對其等的控制系統之方塊圖加以組合而成之圖。再者，在以下之各圖中，為了明確地說明裝置各部之配置關係，如圖1所示，設定右手系統之XYZ正交座標。以該座標系所顯示之XY平面表示水平面，Z方向表示鉛垂方向。尤其是，(-Z)方向表示鉛垂向下方向。Fig. 1 is a diagram showing an embodiment of the substrate processing apparatus of the present invention. More specifically, FIG. 1 is a combination of a cross-sectional view showing the configuration of the main parts of a substrate processing apparatus 1 according to an embodiment of the present invention, and a block diagram of a control system thereof. Furthermore, in the following figures, in order to clearly illustrate the arrangement of the various parts of the device, as shown in Figure 1, set the XYZ orthogonal coordinates of the right-hand system. The XY plane displayed in this coordinate system represents the horizontal plane, and the Z direction represents the vertical direction. In particular, the (-Z) direction indicates the vertical downward direction.

該基板處理裝置1，例如可應用於面板級封裝(PLP：Panel Level Package)之製造步驟之一部分。具體而言，基板處理裝置1係在塗佈膜F未乾燥的狀態下接受於表面藉由處理液形成有塗佈膜F的基板S，且對基板S進行加熱並且將周圍空間減壓。藉此，基板處理裝置1執行使塗佈膜中之溶劑成分揮發而使塗佈膜乾燥、硬化的處理。以下之說明中，將此種之基板處理稱為「加熱減壓乾燥處理」。The substrate processing apparatus 1 can be applied to, for example, a part of the manufacturing process of a panel level package (PLP: Panel Level Package). Specifically, the substrate processing apparatus 1 receives the substrate S on which the coating film F is formed by the processing liquid on the surface of the coating film F without being dried, heats the substrate S and reduces the pressure of the surrounding space. Thereby, the substrate processing apparatus 1 performs a process of volatilizing the solvent component in the coating film to dry and harden the coating film. In the following description, this type of substrate treatment is referred to as "heating and reduced pressure drying treatment."

作為基板S，例如可適用在半導體封裝用玻璃基板，該玻璃基板係在俯視時具有矩形形狀且於其表面上積層有半導體晶片、配線等。此外，塗佈膜F例如為光阻膜。再者，基板之材質及塗佈膜之種類不被限定於此。此外，作為處理對象之基板，例如亦可為被使用於半導體封裝以外之半導體元件之製造的基板。As the substrate S, for example, it can be applied to a glass substrate for semiconductor packaging, which has a rectangular shape in a plan view and has a semiconductor wafer, wiring, etc. laminated on the surface. In addition, the coating film F is, for example, a photoresist film. Furthermore, the material of the substrate and the type of coating film are not limited to this. In addition, the substrate to be processed may be, for example, a substrate used in the manufacture of semiconductor elements other than semiconductor packages.

基板處理裝置1，作為主要之構成具備有腔室10、排氣部50及控制部90。腔室10係於其內部接受於上面Sa形成有塗佈膜F的基板S且進行既定之處理。排氣部50被連接至腔室10之內部空間，對腔室之內部空間進行排氣。控制部90具備有CPU(Central Processing Unit，中央處理單元)91。CPU91係藉由執行既定之控制程式而控制裝置各部之動作，以實現以下所說明之各種處理。再者，在圖1中之虛線箭頭顯示自控制部90朝裝置各部的控制信號之流動。The substrate processing apparatus 1 includes a chamber 10, an exhaust unit 50, and a control unit 90 as main components. The chamber 10 receives the substrate S on which the coating film F is formed on the upper surface Sa in the chamber 10 and performs a predetermined process. The exhaust part 50 is connected to the internal space of the chamber 10 and exhausts the internal space of the chamber. The control unit 90 includes a CPU (Central Processing Unit) 91. The CPU 91 controls the actions of each part of the device by executing a predetermined control program to realize various processes described below. Furthermore, the dotted arrows in FIG. 1 show the flow of control signals from the control unit 90 to the various parts of the device.

腔室10具有以下之功能：其形成用以將基板S之周圍減壓的處理空間SP，防止藉由處理而所揮發之氣體成分朝周圍擴散，且藉由覆蓋被加熱之基板S之周圍以抑制熱量之散發且提高能量效率。為了該等之目的，腔室10成為箱型構造，該箱型構造係經由密封構件13將蓋部11與底板部12組合而成。更具體而言，具有下方呈開口之空洞的蓋部11將大致平板形狀之底板部12之上部加以封閉，藉此於蓋部11與底板部12之間形成處理空間SP。蓋部11及底板部12，例如藉由不鏽鋼或鋁等之金屬材料所形成。此外，密封構件13係藉由橡膠等之彈性材料所形成。The chamber 10 has the following functions: it forms a processing space SP for reducing the pressure around the substrate S, prevents gas components volatilized by processing from diffusing to the surroundings, and covers the surroundings of the substrate S being heated to Suppress heat dissipation and improve energy efficiency. For these purposes, the chamber 10 has a box-shaped structure formed by combining a lid portion 11 and a bottom plate portion 12 via a sealing member 13. More specifically, the lid portion 11 having a cavity with an opening at the bottom closes the upper portion of the substantially flat plate-shaped bottom plate portion 12 to thereby form a processing space SP between the lid portion 11 and the bottom plate portion 12. The cover portion 11 and the bottom plate portion 12 are formed of metal materials such as stainless steel or aluminum, for example. In addition, the sealing member 13 is formed of an elastic material such as rubber.

蓋部11係藉由未圖示之支撐機構可升降地被支撐於鉛垂方向(Z方向)。被設於控制部90的腔室驅動部93係使蓋部11沿Z方向升降。藉此，腔室10被開閉。具體而言，藉由腔室驅動部93在蓋部11被定位在於圖1所示之下部位置的狀態下，腔室10被封閉，且於內部形成處理空間SP。另一方面，藉由腔室驅動部93使蓋部11朝上方移動，蓋部11與底板部12被分離，則處理空間SP被開放至外部空間。在蓋部11之關閉狀態下，對基板S執行處理，另一方面，在開放狀態下可執行基板S之出入、對內部零件的維修作業等。The cover 11 is supported in the vertical direction (Z direction) so that it can be raised and lowered by a support mechanism (not shown). The chamber drive part 93 provided in the control part 90 raises and lowers the cover part 11 in the Z direction. Thereby, the chamber 10 is opened and closed. Specifically, the chamber 10 is closed by the chamber driving portion 93 in the state where the lid portion 11 is positioned at the lower position shown in FIG. 1, and the processing space SP is formed inside. On the other hand, when the lid portion 11 is moved upward by the chamber driving portion 93, the lid portion 11 and the bottom plate portion 12 are separated, and the processing space SP is opened to the external space. In the closed state of the cover 11, processing is performed on the substrate S. On the other hand, in the open state, access to the substrate S, maintenance work on internal parts, and the like can be performed.

於腔室10之底板部12設置有熱板20。熱板20係一平板狀構件，當俯視時其上面為與基板S大致相同或略大於基板S之尺寸。於熱板20之內部內藏有未圖示之加熱器，該加熱器作為使熱板20升溫的熱源。為了將該加熱器與其他之熱源區分，在以下之說明中稱之為「內部加熱器」。熱板20係藉由未圖示之支撐構件在自底板部12之上面朝上方分離的狀態下被支撐。藉此，可實現熱板20與底板部12之間的熱分離。藉由自控制部90之內部加熱器控制部94朝內部加熱器供給電力以使加熱器升溫而熱板20被加熱。內部加熱器控制部94係配合來自CPU91的控制指令，以熱板20之上面21成為既定溫度之方式控制內部加熱器。藉此，基板S藉由來自熱板20的輻射熱而被均一地加熱。A hot plate 20 is provided on the bottom plate 12 of the chamber 10. The hot plate 20 is a flat-plate-shaped member whose upper surface is approximately the same as or slightly larger than the size of the substrate S when viewed from above. A heater (not shown) is built inside the hot plate 20, and the heater serves as a heat source for heating the hot plate 20. In order to distinguish this heater from other heat sources, it is referred to as "internal heater" in the following description. The hot plate 20 is supported by a supporting member (not shown) in a state of being separated upward from the upper surface of the bottom plate portion 12. In this way, thermal separation between the hot plate 20 and the bottom plate 12 can be achieved. The internal heater control unit 94 of the control unit 90 supplies electric power to the internal heater to raise the temperature of the heater, and the hot plate 20 is heated. The internal heater control unit 94 cooperates with a control command from the CPU 91 to control the internal heater so that the upper surface 21 of the hot plate 20 becomes a predetermined temperature. Thereby, the substrate S is uniformly heated by the radiant heat from the hot plate 20.

為了於熱板20與外部之搬送機器人之間順利地進行基板S之傳遞，於基板處理裝置1設置有升降機構30。具體而言，於腔室10之底板部12及熱板20設置有沿鉛垂方向Z延伸的複數個貫通孔，於其等之貫通孔之各者插通有升降銷32。各升降銷32之下端被固定於升降構件33。升降構件33藉由控制部90之升降銷驅動部92升降自如地被支撐於上下方向。升降銷驅動部92配合來自CPU91的升降指令進行動作以使升降構件33升降。藉此，各升降銷32一體地升降運動。升降銷32係其上端在較熱板20之上面21大幅地突出於上方的上部位置、及自熱板20之上面21的上端之突出量較小的下部位置之間升降移動。In order to smoothly transfer the substrate S between the hot plate 20 and the external transfer robot, a lifting mechanism 30 is provided in the substrate processing apparatus 1. Specifically, the bottom plate portion 12 and the hot plate 20 of the chamber 10 are provided with a plurality of through holes extending in the vertical direction Z, and a lift pin 32 is inserted into each of the through holes. The lower end of each lift pin 32 is fixed to the lift member 33. The elevating member 33 is vertically supported by the elevating pin driving portion 92 of the control portion 90 so as to be freely up and down. The lift pin driving unit 92 operates in accordance with a lift command from the CPU 91 to lift the lift member 33 up and down. Thereby, each lifting pin 32 moves up and down integrally. The upper end of the lifting pin 32 moves up and down between an upper position where the upper surface 21 of the hotter plate 20 protrudes greatly above and a lower position where the upper end of the upper end 21 of the hot plate 20 protrudes less.

圖1顯示升降銷位於下部位置的狀態。於該狀態下，升降銷32之上端自熱板20之上面21略朝上方突出。因此，基板S在其下面Sb與熱板20之上面21隔開微小間隔的狀態下以水平姿勢被支撐。再者，亦可取代此種之藉由升降銷32被支撐的態樣，而改為藉由被設於熱板20之上面21的突起部支撐基板S的構成。於該情況下，升降銷32亦可為位於更下方而自基板S分離的狀態。Figure 1 shows the state where the lift pin is in the lower position. In this state, the upper end of the lifting pin 32 slightly protrudes upward from the upper surface 21 of the heating plate 20. Therefore, the substrate S is supported in a horizontal posture with its lower surface Sb and the upper surface 21 of the hot plate 20 separated by a small interval. Furthermore, instead of the support by the lift pins 32, the substrate S can be supported by a protrusion provided on the upper surface 21 of the hot plate 20. In this case, the lift pin 32 may be located further below and separated from the substrate S.

基板S藉由來自熱板20之上面21之輻射熱而被加熱。藉由於基板S之下面Sb與熱板20之上面21之間設置間隔，使自熱板20朝基板S的熱遷移，成為主要藉由輻射被進行而非傳導。如此，可抑制起因於在熱板20上的溫度不均而所可能產生之對基板S之加熱不均。其結果，成為可均一地加熱被形成於基板S的塗佈膜F，從而形成均質之膜。The substrate S is heated by radiant heat from the upper surface 21 of the hot plate 20. Due to the spacing provided between the lower surface Sb of the substrate S and the upper surface 21 of the hot plate 20, the heat transfer from the hot plate 20 to the substrate S is mainly conducted by radiation rather than conduction. In this way, it is possible to suppress the uneven heating of the substrate S that may be caused by the uneven temperature on the hot plate 20. As a result, the coating film F formed on the substrate S can be uniformly heated to form a homogeneous film.

作為處理對象物而被搬入的基板S，並非被限定為維持在平面狀態，亦存在有具有彎曲、翹曲的情形。例如，積層有熱膨脹率彼此不同之功能層的基板S，存在有維持著保留有翹曲而被搬入的情形，該翹曲係起因於其等功能層在處理過程中伸縮所產生。The substrate S carried in as a processing target is not limited to be maintained in a flat state, and may have a curve or warpage. For example, a substrate S in which functional layers with different thermal expansion coefficients are laminated may be carried in while maintaining the warpage. The warpage is caused by the expansion and contraction of the functional layers during processing.

如此之基板S之翹曲成為與熱板20之間的間隔變動之原因。由於與熱源之距離不均，而產生塗佈膜F之加熱不均，進而存在有引起膜質之不均之虞。因此，為了矯正基板S之此種翹曲而接近至平面狀態，於該基板處理裝置1設置有矯正機構40。Such warpage of the substrate S becomes a cause of variation in the distance between the substrate S and the hot plate 20. Due to the uneven distance from the heat source, uneven heating of the coating film F occurs, which may cause uneven film quality. Therefore, in order to correct the warpage of the substrate S and approach it to a planar state, a correction mechanism 40 is provided in the substrate processing apparatus 1.

矯正機構40具有以下之構造：於蓋部11之內側頂面111分別經由調整螺帽42安裝有複數個矯正銷41。於基板S上存在有翹曲的情況下，藉由在蓋部11之關閉狀態下使矯正銷41自上方抵接至基板S之上面Sa，以矯正翹曲。在此之「矯正」之目的，並非在嚴格意義上將基板S設為平坦之狀態，而是將與熱板20之間隔之不均抑制在不產生加熱不均的程度。因此，不一定需要所有矯正銷41皆抵接至基板S。The correcting mechanism 40 has a structure in which a plurality of correcting pins 41 are respectively mounted on the inner top surface 111 of the cover 11 via the adjusting nut 42. When there is warpage on the substrate S, the correction pin 41 is brought into contact with the upper surface Sa of the substrate S from above in the closed state of the cover 11 to correct the warpage. The purpose of the "correction" here is not to make the substrate S flat in the strict sense, but to suppress the unevenness of the distance from the hot plate 20 to the extent that heating unevenness does not occur. Therefore, it is not necessary that all the correction pins 41 abut on the substrate S.

藉由調整被螺合至調整螺帽42的矯正銷41之螺入量，可改變各矯正銷41之下端之鉛垂方向位置。藉此，可將各矯正銷41下端之Z方向位置對齊，並且成為可對各種厚度之基板S進行適當之矯正。By adjusting the screwing amount of the correction pins 41 screwed to the adjustment nut 42, the vertical position of the lower end of each correction pin 41 can be changed. Thereby, the position of the lower end of each correction pin 41 in the Z direction can be aligned, and the substrate S of various thicknesses can be appropriately corrected.

於腔室10之底板部12設置有排氣用貫通孔121及沖吹用貫通孔122。其中，於排氣用貫通孔121上連接有排氣部50之排氣用配管51。此外，於沖吹用貫通孔122上連接有排氣部50之沖吹用配管52。排氣用配管51經由排氣用閥53及泵54被連接至未圖示之排氣管線。此外，沖吹用配管52經由沖吹用閥55被連接至未圖示之沖吹用氣體源。The bottom plate 12 of the chamber 10 is provided with a through hole 121 for exhaust and a through hole 122 for flushing. Among them, the exhaust pipe 51 of the exhaust portion 50 is connected to the exhaust through hole 121. In addition, the flushing pipe 52 of the exhaust part 50 is connected to the flushing through hole 122. The exhaust pipe 51 is connected to an exhaust line (not shown) via an exhaust valve 53 and a pump 54. Moreover, the piping 52 for flushing is connected to the gas source for flushing which is not shown in figure via the valve 55 for flushing.

排氣部50藉由控制部90之環境氣體控制部97被控制。具體而言，配合來自環境氣體控制部97的控制信號使排氣用閥53及泵54動作，配合腔室10內之氣體被排氣，且對處理空間SP進行減壓。此外，配合來自環境氣體控制部97的控制信號使沖吹用閥55動作，沖吹用氣體自外部之氣體源被導入至處理空間SP。如此，排氣部50配合來自環境氣體控制部97的控制信號而動作，以控制處理空間SP內之環境氣體。The exhaust unit 50 is controlled by the ambient gas control unit 97 of the control unit 90. Specifically, the exhaust valve 53 and the pump 54 are activated in response to a control signal from the ambient gas control unit 97, the gas in the chamber 10 is exhausted, and the processing space SP is reduced in pressure. In addition, the flushing valve 55 is operated in accordance with the control signal from the ambient gas control unit 97, and the flushing gas is introduced into the processing space SP from an external gas source. In this way, the exhaust unit 50 operates in accordance with the control signal from the ambient gas control unit 97 to control the ambient gas in the processing space SP.

於蓋部11之上面112設置有上部加熱器16。上部加熱器16自控制部90之上部加熱器控制部96接受電力供給而升溫，對蓋部11之頂板進行加熱。可配合需要預先加熱蓋部11，防止自塗佈膜F所揮發的成分與冰冷之蓋部11接觸而析出並落下至基板S。An upper heater 16 is provided on the upper surface 112 of the cover 11. The upper heater 16 receives power supply from the upper heater control unit 96 of the control unit 90 to increase the temperature, and heat the top plate of the cover 11. The cover 11 can be heated in advance to prevent the components volatilized from the coating film F from coming into contact with the ice-cold cover 11 to precipitate and fall onto the substrate S.

此外，於底板部12之下面安裝有下部加熱器15。下部加熱器15自控制部90之下部加熱器控制部95接受電力供給而升溫，對底板部12進行加熱。如稍後詳述，下部加熱器15係具有自下方經由底板部12輔助性地加熱基板S之周緣部，藉此以減少基板S之溫度不均的功能。In addition, a lower heater 15 is installed under the bottom plate portion 12. The lower heater 15 receives power supply from the lower heater control unit 95 of the control unit 90 to increase the temperature, and heat the bottom plate portion 12. As described in detail later, the lower heater 15 has a function of auxiliary heating the peripheral portion of the substrate S through the bottom plate portion 12 from below, thereby reducing the temperature unevenness of the substrate S.

圖2A至圖2C為示意地顯示將基板搬入至腔室時之各部之動作之圖。如上述，於該基板處理裝置1中，可在構成腔室10的蓋部11朝上方退避的狀態下自外部接受基板S。具體而言，如圖2A所示，可藉由腔室驅動部93使蓋部11朝上方移動，而使蓋部11與底板部12沿上下方向大幅地分離。2A to 2C are diagrams schematically showing the actions of various parts when the substrate is carried into the chamber. As described above, in the substrate processing apparatus 1, the substrate S can be received from the outside in a state where the lid 11 constituting the chamber 10 is retracted upward. Specifically, as shown in FIG. 2A, the cover 11 can be moved upward by the chamber driving unit 93, and the cover 11 and the bottom plate 12 can be largely separated in the vertical direction.

於該狀態下，可自側面接受基板S之搬入。亦即，於基板S被載置於設於外部之搬送機器人的機械手H的狀態下，通過蓋部11與底板部12之間之間隙被搬入至基板處理裝置1。此時，為了避免與機械手H產生干涉，較佳為將升降銷32下降至下部位置。In this state, the substrate S can be carried in from the side. That is, the substrate S is carried into the substrate processing apparatus 1 through the gap between the cover portion 11 and the bottom plate portion 12 in a state where the substrate S is placed on the robot hand H of the transfer robot provided outside. At this time, in order to avoid interference with the robot H, it is preferable to lower the lift pin 32 to the lower position.

於基板S被移送至既定位置的階段，如圖2B所示，藉由升降銷32上升而抵接至基板S之下面Sb，藉此，將基板S自機械手H傳遞至升降銷32。傳遞之後，機械手H朝側面退避，如圖2C所示，藉由使升降銷32下降至下部位置，在與熱板20隔開既定之間隔的狀態下水平地支撐基板S。At the stage when the substrate S is transferred to the predetermined position, as shown in FIG. After the transfer, the robot H retreats to the side. As shown in FIG. 2C, the lift pin 32 is lowered to the lower position to horizontally support the substrate S with a predetermined distance from the hot plate 20.

藉由使蓋部11自該狀態如於圖2C以虛線箭頭所示下降，如圖1所示，蓋部11與底板部12經由密封構件13而被結合。如此，出現處理空間SP被封閉的狀態。此時，藉由使配合基板S之上面Sa之高度而被調整的矯正銷41抵接至基板S，矯正基板S之翹曲。此外，藉由與上述相反之動作，可將基板S自腔室10內搬出。By lowering the lid portion 11 from this state as shown by a broken line arrow in FIG. 2C, as shown in FIG. 1, the lid portion 11 and the bottom plate portion 12 are joined via the sealing member 13. In this way, a state in which the processing space SP is closed occurs. At this time, the correction pin 41 adjusted in accordance with the height of the upper surface Sa of the substrate S is brought into contact with the substrate S to correct the warpage of the substrate S. In addition, the substrate S can be carried out from the chamber 10 by the operation opposite to the above.

圖3A及圖3B為顯示升降銷及矯正銷之配置之圖。圖3A顯示在俯視時之基板S與升降銷32及矯正銷41之位置關係。更具體而言，以白色圓圈顯示升降銷32自下面側抵接至以水平姿勢被支撐之基板S的位置。此外，以帶斜影線之圓圈顯示矯正銷41自基板S之上面側所抵接的位置。如該圖所示，為了一面分散藉由基板S所產生之載荷一面支撐基板S，複數個升降銷32係以一定之間距被分散配置。另一方面，在以此種方式配置有升降銷32的區域Rp之更外側以一定間距配置有複數個矯正銷41。因此，矯正銷41係在較升降銷32所抵接的位置更外側抵接至基板S。再者，在區域Rp內的升降銷32之配置及在區域Rp之外側的矯正銷41之配置，並不被限定於本例。Fig. 3A and Fig. 3B are diagrams showing the arrangement of lift pins and correction pins. FIG. 3A shows the positional relationship between the substrate S, the lifting pins 32 and the correcting pins 41 when viewed from above. More specifically, the position where the lift pin 32 abuts from the lower surface side to the substrate S supported in a horizontal posture is indicated by a white circle. In addition, the position where the correction pin 41 abuts from the upper surface side of the substrate S is indicated by a circle with a diagonal hatching. As shown in the figure, in order to support the substrate S while dispersing the load generated by the substrate S, a plurality of lift pins 32 are dispersedly arranged at a certain interval. On the other hand, a plurality of correcting pins 41 are arranged at a constant pitch on the outer side of the region Rp where the lift pins 32 are arranged in this manner. Therefore, the correction pin 41 abuts against the substrate S on the outer side than the position where the lift pin 32 abuts. In addition, the arrangement of the lift pins 32 in the area Rp and the arrangement of the correction pins 41 outside the area Rp are not limited to this example.

構成如上述的理由如下。於本實施形態之基板處理裝置1中被提供至處理的基板S係例如於玻璃基板之上面積層有半導體電路等之元件者。於此種基板中，如圖3B所示，起因於各材料之熱膨脹率之差異，常見有基板S之周緣部向上反翹，基板S整體呈現下凸之曲面的情形。The reason for the above-mentioned structure is as follows. The substrate S provided to be processed in the substrate processing apparatus 1 of this embodiment is, for example, a glass substrate with an element such as a semiconductor circuit layered on an area. In this type of substrate, as shown in FIG. 3B, due to the difference in the thermal expansion coefficient of each material, it is common that the peripheral edge of the substrate S is upwardly warped, and the substrate S as a whole presents a convex curved surface.

於此種情況下，僅利用升降銷32自下方支撐基板S，基板S之翹曲仍被維持，其結果，與熱板20之間之間隙相較於中央部而在基板S之周緣部上成為更大。這會使得在基板S之周緣部上與作為熱源之熱板20的距離變大，進而引起不能充分加熱的不良情形。如於圖3B以虛線所示，在較被升降銷32自下方所支撐的區域Rp更外側使矯正銷41抵接至基板S之上面，藉此自上方按壓在基板S之周緣部上的翹曲，成為可使基板S接近至平面狀態。In this case, only the lift pins 32 are used to support the substrate S from below, and the warpage of the substrate S is still maintained. As a result, the gap with the hot plate 20 is on the peripheral edge of the substrate S compared to the central part. Become bigger. This will increase the distance between the peripheral portion of the substrate S and the hot plate 20 as a heat source, which will cause a problem that it cannot be sufficiently heated. As shown by the broken line in FIG. 3B, the correction pin 41 is made to abut on the upper surface of the substrate S on the outer side than the region Rp supported by the lift pins 32 from below, thereby pressing the warp on the peripheral edge of the substrate S from above. The curve becomes a state where the substrate S can be brought close to a plane.

如於上述專利文獻1所記載之技術，在藉由預先對塗佈膜進行減壓而在使溶劑成分部分地揮發的狀態下所進行之加熱乾燥處理中，塗佈膜之硬化於加熱之前已經進行有一定程度。因此，此種加熱不均對完全乾燥後之塗佈膜之品質的影響相對較小。另一方面，於如本實施形態般在塗佈膜未乾燥的狀態下接受基板的加熱減壓乾燥處理中，對於液狀之塗佈膜藉由進行具有不均之加熱而所導致之膜質之不均變成較大。因此，如上述之藉由矯正基板S之翹曲以減少加熱不均的對應方法尤其有效。As in the technique described in Patent Document 1, in the heating and drying treatment performed in a state where the solvent component is partially volatilized by reducing the pressure of the coating film in advance, the coating film is cured before heating There is a certain degree of progress. Therefore, such uneven heating has a relatively small effect on the quality of the coated film after complete drying. On the other hand, in the heating and decompression drying process of receiving the substrate while the coating film is not dried as in the present embodiment, the coating film in the liquid state is heated with unevenness in the film quality. The unevenness becomes larger. Therefore, the above-mentioned corresponding method of correcting the warpage of the substrate S to reduce uneven heating is particularly effective.

於本實施形態之基板處理裝置1中，以消除在基板S之周緣部上的加熱不足為目的，更於腔室10之底板部12配置有下部加熱器15(圖1)。除了藉由熱板20內之內部加熱器加熱基板S之外，下部加熱器15係藉由加熱底板部12而輔助性地欲加熱基板S者。In the substrate processing apparatus 1 of the present embodiment, in order to eliminate insufficient heating on the peripheral edge of the substrate S, a lower heater 15 is further arranged on the bottom plate 12 of the chamber 10 (FIG. 1 ). In addition to heating the substrate S by the internal heater in the hot plate 20, the lower heater 15 is used to assist the heating of the substrate S by heating the bottom plate portion 12.

在藉由內部加熱器之發熱使熱板20升溫的情況下，與熱板20之中央部比較，尤其是於熱容易朝外部逃逸的周緣部上溫度可能無法充分地升高。因此，即使可於基板S之整個區域上與熱板20保持一定之距離，亦可能產生無法於基板S之周緣部獲得充分之加熱的加熱不均現象。於基板S為矩形之情況下，尤其是在該基板之四個隅角附近容易產生加熱不足。In the case where the temperature of the hot plate 20 is raised by the heat generated by the internal heater, compared with the central part of the hot plate 20, the temperature may not be sufficiently raised especially at the peripheral part where the heat easily escapes to the outside. Therefore, even if it is possible to maintain a certain distance from the hot plate 20 over the entire area of the substrate S, a heating unevenness phenomenon may occur that sufficient heating cannot be obtained at the periphery of the substrate S. When the substrate S is rectangular, insufficient heating is likely to occur especially near the four corners of the substrate.

雖然尚留有藉由在熱板20上增加溫度檢測點或在加熱器之發熱圖案上下些功夫而存在有改善之餘地，但是因控制點彼此之干涉，卻亦有可能引起溫度不穩定的情況。為了對應該問題，於該基板處理裝置1中，藉由設置選擇性地加熱基板S之周緣部的下部加熱器15，尋求消除與中央部的溫度差。Although there is still room for improvement by adding temperature detection points on the hot plate 20 or putting some effort on the heating pattern of the heater, the interference of the control points may also cause temperature instability. . In order to cope with the problem, in the substrate processing apparatus 1, a lower heater 15 that selectively heats the peripheral portion of the substrate S is provided to eliminate the temperature difference with the central portion.

圖4為顯示下部加熱器之配置例之圖。如於圖4附加有符號(a)及(b)所顯示之2個事例所示，下部加熱器15被配置在底板部12之下面中之與被配置於底板部12之上方的基板S之周緣部對應的位置。具體而言，於圖4(a)所示之例中，下部加熱器15具有4個發熱體15a〜15d，且各個發熱體15a〜15d係以與基板S之4個頂點對應且覆蓋各頂點之正下方位置及其周邊區域之方式所配置。另一方面，於圖4(b)所示之例中，以覆蓋周邊區域之方式設置有被形成為矩形環狀的下部加熱器15，該周邊區域係包含與基板S之周緣部對應的4個邊之正下方位置。Fig. 4 is a diagram showing an example of the arrangement of the lower heater. As shown in the two examples shown in FIG. 4 with symbols (a) and (b), the lower heater 15 is arranged between the lower surface of the bottom plate 12 and the substrate S arranged above the bottom plate 12 The position corresponding to the peripheral edge. Specifically, in the example shown in FIG. 4(a), the lower heater 15 has four heating elements 15a-15d, and each heating element 15a-15d corresponds to the four vertices of the substrate S and covers each vertex The location directly below and the surrounding area are arranged in a way. On the other hand, in the example shown in FIG. 4(b), the lower heater 15 formed in a rectangular ring shape is provided so as to cover the peripheral area, and the peripheral area includes 4 corresponding to the peripheral edge of the substrate S. Position directly below each side.

於該等之構成中，可配合需要對下部加熱器15通電以加熱基板S之周緣部，基板S之周緣部之溫度往往低於基板S之中央部之溫度。加熱可藉由來自被下部加熱器15所加熱的底板部12之輻射熱直接地進行，或者亦可藉由該輻射熱加溫熱板20之周緣部而間接地進行。如此，可於基板S之整個區域均一地進行塗佈膜F之乾燥，成為可使乾燥後之塗佈膜F之品質均一且良好。In these configurations, the lower heater 15 can be energized to heat the peripheral edge of the substrate S. The temperature of the peripheral edge of the substrate S is often lower than the temperature of the center of the substrate S. The heating may be performed directly by radiant heat from the bottom plate portion 12 heated by the lower heater 15, or may be performed indirectly by the radiant heat heating the periphery of the hot plate 20. In this way, the coating film F can be dried uniformly over the entire area of the substrate S, so that the quality of the coating film F after drying can be uniform and good.

為了防止自下部加熱器15所產生的顆粒等之污染物質附著至基板S，希望將下部加熱器15配置於較基板S更下方。這點雖然亦適用於內部加熱器，但是對於基板S之加熱主體即內部加熱器(具體而言，內藏有該內部加熱器的熱板20)而言，需要於腔室10中配置為靠近至基板S。In order to prevent contaminants such as particles generated from the lower heater 15 from adhering to the substrate S, it is desirable to arrange the lower heater 15 below the substrate S. This point is also applicable to the internal heater, but for the internal heater (specifically, the hot plate 20 containing the internal heater) that is the heating main body of the substrate S, it needs to be arranged in the chamber 10 close to To the substrate S.

另一方面，由於下部加熱器15僅輔助地加熱基板S之周緣部，因此不需要配置為靠近至基板S。如本實施形態般亦可設於腔室10之外側、例如底板部12之下面。藉由以此種方式分離配置熱板20與下部加熱器15，可事先防止溫度分佈因各自之溫度控制干涉而成為不穩定。惟，為了獲得充分之加熱效果，希望將下部加熱器15之設定目標溫度設定為高於內部加熱器之設定目標溫度。 On the other hand, since the lower heater 15 only assists in heating the peripheral edge portion of the substrate S, it does not need to be arranged close to the substrate S. Like this embodiment, it can also be provided on the outer side of the chamber 10, for example, under the bottom plate part 12. By separately disposing the hot plate 20 and the lower heater 15 in this way, it is possible to prevent the temperature distribution from becoming unstable due to the interference of the respective temperature control. However, in order to obtain a sufficient heating effect, it is desirable to set the set target temperature of the lower heater 15 to be higher than the set target temperature of the internal heater.

圖5為顯示藉由該基板處理裝置所執行之加熱減壓乾燥處理之流程之流程圖。該處理係藉由控制部90之CPU91執行預先被準備的控制程式以使裝置之各部分執行既定動作而被實現。預先將熱板20升溫至既定之溫度(步驟S101)。此外，根據需要亦在上部加熱器16及下部加熱器15中進行升溫控制。FIG. 5 is a flowchart showing the flow of heating and decompression drying processing performed by the substrate processing apparatus. This processing is realized by the CPU 91 of the control unit 90 executing a pre-prepared control program to make each part of the device execute a predetermined action. The hot plate 20 is heated up to a predetermined temperature in advance (step S101). In addition, the temperature increase control is also performed in the upper heater 16 and the lower heater 15 as necessary.

然後，將升降銷32定位於下部位置，且使蓋部11朝上方移動而形成開放狀態(步驟S102)，成為可接受基板S的狀態。於此種狀態下，藉由外部之搬送機器人搬入未處理之(即，攜載有未乾燥之塗佈膜F)基板S，且藉由使升降銷32上升至上部位置，而自搬送機器人之機械手H接取基板S(步驟S103)。再者，基板S之搬入及搬出並不被限定於搬送機器人，亦可為使用能以水平姿勢搬送基板之適當之搬送機構的任何方法。Then, the lift pin 32 is positioned at the lower position, and the cover 11 is moved upward to form an open state (step S102), and the substrate S is accepted. In this state, the unprocessed (that is, carrying the undried coating film F) substrate S is carried in by the external transport robot, and the lift pin 32 is raised to the upper position, and the transfer robot The robot H receives the substrate S (step S103). Furthermore, the loading and unloading of the substrate S is not limited to the transfer robot, and any method using an appropriate transfer mechanism that can transfer the substrate in a horizontal posture may be used.

藉由使搬送機器人退避且升降銷32下降至下部位置(步驟S104)，將基板S定位於用以處理的位置、即與預先被升溫之熱板20隔開既定間隔的上方位置。然後，蓋部11下降而將處理空間SP封閉，並且藉由被安裝於蓋部11的矯正銷41抵接並按壓至基板S之上面Sa，以矯正基板S之翹曲(步驟S105)。By retreating the transport robot and lowering the lift pin 32 to the lower position (step S104), the substrate S is positioned at a position for processing, that is, an upper position spaced apart from the hot plate 20 that has been heated in advance by a predetermined interval. Then, the cover 11 is lowered to close the processing space SP, and the correction pin 41 attached to the cover 11 abuts and presses the upper surface Sa of the substrate S to correct the warpage of the substrate S (step S105).

接著，排氣部50動作而對處理空間SP進行減壓(步驟S106)。藉由對收納有基板S的處理空間SP進行減壓，且結合加熱而促進塗佈膜F中之溶劑成分之揮發，進行塗佈膜F之乾燥。此時，可藉由下部加熱器15加熱基板S之周緣部，而在基板S上均一地進行乾燥。Next, the exhaust unit 50 operates to depressurize the processing space SP (step S106). The coating film F is dried by depressurizing the processing space SP in which the substrate S is accommodated, and combining heating to promote the volatilization of the solvent component in the coating film F. At this time, by heating the peripheral edge of the substrate S by the lower heater 15, the substrate S can be dried uniformly.

於連續既定時間執行基板S之加熱及周圍空間之減壓之後(步驟S107)，排氣部50停止排氣且取而代之導入沖吹用氣體(步驟S108)，處理空間SP之減壓狀態被解除。然後，藉由蓋部11朝上方移動，處理空間SP內之基板S被開放於外部空間(步驟S109)，然後升降銷32上升，使基板S自熱板20朝上方退避(步驟S110)。然後，藉由接受外部之搬送機器人，將乾燥處理後之基板S搬出至外部(步驟S111)。After the heating of the substrate S and the decompression of the surrounding space are performed for a predetermined time continuously (step S107), the exhaust unit 50 stops exhausting and introduces the flushing gas instead (step S108), and the depressurized state of the processing space SP is released. Then, by moving the cover 11 upward, the substrate S in the processing space SP is opened to the external space (step S109), and then the lift pins 32 rise to retract the substrate S upward from the hot plate 20 (step S110). Then, the substrate S after the drying process is carried out to the outside by the transfer robot receiving the outside (step S111).

於存在有下一個待處理之基板S(步驟S112中為YES)的情況下，則返回至步驟S102以接受新基板S且進行與上述相同之處理。另一方面，若不存在有新基板S(步驟S112中為NO)，則可經由既定之終止動作而結束處理。If there is a next substrate S to be processed (YES in step S112), return to step S102 to accept the new substrate S and perform the same processing as described above. On the other hand, if there is no new substrate S (NO in step S112), the processing can be ended through a predetermined termination operation.

如上述，本實施形態之基板處理裝置1，於腔室10內接受形成有未乾燥之塗佈膜F的基板S，且於腔室10內對塗佈膜F執行加熱減壓乾燥處理。於此情況下，藉由使升降銷32抵接至基板S之下面Sb側，另一方面使矯正銷41抵接至上面Sa側，可矯正基板S之翹曲以使基板S接近至平面狀態。藉此，可減少起因於基板S自熱板20局部地分離所產生之加熱不均而引起之乾燥後之塗佈膜F之品質不均。As described above, the substrate processing apparatus 1 of the present embodiment receives the substrate S on which the undried coating film F is formed in the chamber 10, and performs the heating and reduced pressure drying process on the coating film F in the chamber 10. In this case, by abutting the lift pin 32 to the lower surface Sb side of the substrate S, and on the other hand, the correcting pin 41 abuts to the upper surface Sa side, the warpage of the substrate S can be corrected so that the substrate S is close to a flat state . Thereby, the unevenness in the quality of the coating film F after drying caused by uneven heating caused by the partial separation of the substrate S from the hot plate 20 can be reduced.

此外，於基板S之下方設置有輔助地加熱基板S之周緣部的下部加熱器15。因此，可抑制在基板S之周緣部與中央部之間產生溫度差，可進一步減小起因於加熱不均而所引起的塗佈膜F之品質不均。In addition, a lower heater 15 for auxiliary heating of the peripheral edge of the substrate S is provided below the substrate S. Therefore, it is possible to suppress the occurrence of a temperature difference between the peripheral portion and the central portion of the substrate S, and it is possible to further reduce the unevenness in the quality of the coating film F caused by uneven heating.

再者，本發明並不被限定於上述實施形態，於不超出其實質內容之範圍內，可進行上述構成以外之各種變更。例如，於上述實施形態中，於基板S之中央部之區域Rp配置有16個升降銷32，另一方面圍繞其外側配置有16個矯正銷41。然而，該等之配置係顯示其之一例，針對配置除了上述配置外亦可適當地改變而進行應用。In addition, the present invention is not limited to the above-mentioned embodiment, and various changes other than the above-mentioned configuration can be made without departing from the scope of its essence. For example, in the above-mentioned embodiment, 16 lift pins 32 are arranged in the region Rp of the central part of the substrate S, while 16 correction pins 41 are arranged around the outer side. However, these configurations are shown as an example, and the configurations can be appropriately changed and applied in addition to the above configurations.

此外，上述實施形態之矯正銷41係在較升降銷32更外側抵接至基板S。然而，本發明不被限定於此，例如，亦可以在與最外側之升降銷相同的位置、即與區域Rp之外緣對應的位置抵接至基板之方式配置矯正銷。In addition, the correction pin 41 of the above-mentioned embodiment abuts against the substrate S on the outer side of the lift pin 32. However, the present invention is not limited to this. For example, the correction pin may be arranged at the same position as the outermost lift pin, that is, at a position corresponding to the outer edge of the region Rp to abut the substrate.

此外，上述實施形態之升降銷32及矯正銷41，皆具有以細小之前端部抵接至基板S的構造。然而，為了支撐基板S而抵接至下面的構件及為了矯正翹曲而抵接至上面的構件之至少一個，亦可為具有例如桿狀或平板狀，且以大於銷狀構件的面積抵接至基板。In addition, both the lift pin 32 and the correction pin 41 of the above-mentioned embodiment have a structure in which a small front end abuts against the substrate S. However, at least one of the member abutting to the lower surface for supporting the substrate S and the member abutting to the upper surface for correcting warpage may have, for example, a rod shape or a flat plate shape, and abut with an area larger than that of the pin-shaped member. To the substrate.

此外，在上述實施形態中之腔室10係藉由下側呈開口的蓋部11覆蓋平板狀之底板部12之上部而形成處理空間SP。亦可取代此，例如為使平板狀之蓋構件封閉上部呈開口的箱型之筐體上部的構造。In addition, in the chamber 10 in the above-mentioned embodiment, the upper portion of the flat plate-shaped bottom plate portion 12 is covered by the cover portion 11 having an opening on the lower side to form the processing space SP. Instead of this, for example, it may be a structure in which a flat-plate-shaped cover member closes the upper part of a box-shaped housing with an open upper part.

此外，上述實施形態中之上部加熱器16及下部加熱器15，可配合需要加以通電，且亦可實施不使用該等之至少一者的乾燥處理。In addition, in the above-mentioned embodiment, the upper heater 16 and the lower heater 15 can be energized according to needs, and a drying process that does not use at least one of these can be performed.

此外，上述實施形態係以矩形基板作為處理對象，且熱板之形狀及升降銷、矯正銷之配置，亦以矩形基板作為前提。然而，作為本發明之應用對象的基板並不被限定於矩形。例如，即使於圓形基板、在外周具有凹凸之變形基板的情況下，亦可藉由適當地改變各部分之形狀、配置而進行相同之處理。In addition, the foregoing embodiment uses a rectangular substrate as a processing object, and the shape of the hot plate and the arrangement of the lifting pins and the correction pins are also based on the rectangular substrate. However, the substrate to which the present invention is applied is not limited to a rectangular shape. For example, even in the case of a circular substrate or a deformed substrate having unevenness on the outer periphery, the same treatment can be performed by appropriately changing the shape and arrangement of each part.

如以上說明，於本實施形態之基板處理裝置1中，升降銷32係作為本發明之「支撐部」而發揮作用，矯正銷41係作為本發明之「矯正構件」而發揮作用。此外，熱板20係作為本發明之「加熱部」而發揮作用，下部加熱器15係作為「第二加熱部」而發揮作用。此外，排氣部50係作為本發明之「減壓部」而發揮作用。此外，蓋部11相當於本發明之「上側單元」，另一方面底板部12相當於本發明之「下側單元」，該等作為一體而形成本發明之「腔室」。此外，調整螺帽42係作為本發明之「調整機構」而發揮作用。As described above, in the substrate processing apparatus 1 of the present embodiment, the lift pin 32 functions as the "support portion" of the present invention, and the correction pin 41 functions as the "correction member" of the present invention. In addition, the hot plate 20 functions as the "heating part" of the present invention, and the lower heater 15 functions as the "second heating part". In addition, the exhaust part 50 functions as the "decompression part" of the present invention. In addition, the cover portion 11 corresponds to the "upper unit" of the present invention, and the bottom plate portion 12 corresponds to the "lower unit" of the present invention, and these together form the "cavity" of the present invention. In addition, the adjustment nut 42 functions as the "adjustment mechanism" of the present invention.

以上，如例示具體之實施形態而作之說明，於本發明中，加熱部亦可為具有熱板，該熱板係上面具有與基板相同或大於基板的平面尺寸且被升溫控制至既定溫度，且支撐部以隔開既定之間隔對向於熱板之上面之方式支撐基板的構成。根據此種之構成，可藉由來自被升溫控制之熱板的輻射熱均一地加熱基板S。As described above, as an example of a specific embodiment, in the present invention, the heating part may also have a hot plate. The hot plate has the same or larger plane size as the substrate and is heated to a predetermined temperature. And the supporting part supports the structure of the substrate in such a way that it faces the upper surface of the hot plate at a predetermined interval. According to this structure, the substrate S can be uniformly heated by the radiant heat from the heating plate whose temperature is controlled.

此外，例如，亦可在較被支撐於腔室內的基板低的位置設置加熱基板之周緣部的第二加熱部。根據此種之構成，藉由利用第二加熱部加熱溫度容易低於中央部的基板之周緣部，成為可消除與中央部之溫度差，以執行均一之乾燥處理。In addition, for example, a second heating unit that heats the peripheral edge of the substrate may be provided at a position lower than the substrate supported in the chamber. According to this configuration, by using the second heating part to heat the peripheral part of the substrate whose temperature is easily lower than the central part, the temperature difference with the central part can be eliminated and uniform drying treatment can be performed.

於此種情況下，第二加熱部亦可加熱腔室之底部。根據此種之構成，以遠離直接地加熱基板的加熱部之方式配置第二加熱部。第二加熱部成為經由腔室之底部間接地加熱基板。該點可防止在兩個加熱部中之溫度控制相互地干涉反而造成在基板中之溫度分佈變得複雜或不穩定。In this case, the second heating part can also heat the bottom of the chamber. According to this configuration, the second heating unit is arranged away from the heating unit that directly heats the substrate. The second heating part heats the substrate indirectly via the bottom of the chamber. This point can prevent the temperature control in the two heating parts from interfering with each other, and instead cause the temperature distribution in the substrate to become complicated or unstable.

此外，例如，支撐部亦可為一面支撐基板一面升降移動的構成。根據此種之構成，可變更基板與加熱部的距離。因此，例如，可容易進行用以將基板搬入及搬出於腔室的作業。In addition, for example, the supporting portion may also be configured to support the substrate while moving up and down. According to this structure, the distance between the substrate and the heating part can be changed. Therefore, for example, operations for carrying the substrate in and out of the chamber can be easily performed.

此外，例如，腔室亦可具有：下側單元，其設置有支撐部及加熱部；及上側單元，其設置有矯正構件，且藉由上側單元與下側單元結合而藉由上側單元封閉下側單元之上部以形成處理空間。於此種情況下，亦可為當上側單元與下側單元結合時，矯正構件之下端被定位在與被支撐部所支撐的基板之上面之鉛垂方向位置對應之高度的構成。根據此種之構成，使上側單元與下側單元結合以形成處理空間的動作本身，亦可兼任藉由矯正構件按壓基板以矯正翹曲的動作，從而可縮短處理時間。In addition, for example, the chamber may also have: a lower unit provided with a supporting part and a heating part; and an upper unit provided with a correction member, and the upper unit is combined with the lower unit to close the lower unit by the upper unit The upper part of the side unit forms a processing space. In this case, when the upper unit and the lower unit are combined, the lower end of the correcting member is positioned at a height corresponding to the vertical position of the upper surface of the substrate supported by the support portion. According to such a configuration, the action itself of combining the upper unit and the lower unit to form a processing space can also serve as the action of correcting warpage by pressing the substrate by the correcting member, so that the processing time can be shortened.

於此種情況下，可進一步設置調整機構，該調整機構係調整上側單元與下側單元結合時之矯正構件之下端之鉛垂方向。藉此，成為可利用相同裝置對厚度不同的基板進行處理。換言之，藉由具備該調整機構，基板處理裝置成為可對應於各種厚度的基板。In this case, an adjustment mechanism can be further provided, which adjusts the vertical direction of the lower end of the correction member when the upper unit and the lower unit are combined. As a result, the same device can be used to process substrates with different thicknesses. In other words, by providing this adjustment mechanism, the substrate processing apparatus can be adapted to substrates of various thicknesses.

此外，例如，矯正構件亦可為抵接至基板之上面周緣部的構成。更具體而言，當俯視時矯正構件亦可為在基板中之藉由支撐部所支撐的區域之外側與基板抵接者。根據此種之構成，可將周緣部朝上反翹的基板矯正為接近至平坦。 (產業上之可利用性) 本發明可應用於藉由將塗佈液塗佈至表面並使其乾燥而於基板表面形成塗佈膜層的全部之基板處理製程。In addition, for example, the correcting member may be configured to abut on the peripheral edge of the upper surface of the substrate. More specifically, when viewed from above, the correcting member may be one that abuts against the substrate on the outside of the area supported by the support portion in the substrate. According to this configuration, the substrate whose peripheral edge portion is upwardly warped can be corrected to be close to flat. (Industrial availability) The present invention can be applied to all substrate processing processes in which a coating film is formed on the surface of a substrate by applying a coating liquid to the surface and drying it.

1:基板處理裝置 10:腔室 11:蓋部(上側單元) 12:底板部(下側單元) 13:密封構件 15:下部加熱器(第二加熱部) 15a〜15d:發熱體 16:上部加熱器 20:熱板(加熱部) 21:熱板之上面 30:升降機構 32:升降銷(支撐部) 33:升降構件 40:矯正機構 41:矯正銷(矯正構件) 42:調整螺帽(調整機構) 50:排氣部(減壓部) 51:排氣用配管 52:沖吹用配管 53:排氣用閥 54:泵 55:沖吹用閥 65:下部加熱器控制部 90:控制部 91:CPU 92:升降銷驅動部 93:腔室驅動部 94:內部加熱器控制部 95:下部加熱器控制部 96:上部加熱器控制部 97:環境氣體控制部 111:內側頂面 112:上面 121:排氣用貫通孔 122:沖吹用貫通孔 F:塗佈膜 H:機械手 S:基板 Sa:基板上面 Sb:基板下面 SP:處理空間1: Substrate processing equipment 10: Chamber 11: Cover (upper unit) 12: Floor section (lower unit) 13: Sealing member 15: Lower heater (second heating part) 15a~15d: heating element 16: Upper heater 20: Hot plate (heating part) 21: Above the hot plate 30: Lifting mechanism 32: Lifting pin (support part) 33: Lifting member 40: Correctional Institution 41: Correction pin (correction component) 42: Adjusting nut (adjustment mechanism) 50: Exhaust part (decompression part) 51: Exhaust piping 52: Piping for flushing 53: Exhaust valve 54: Pump 55: Flushing valve 65: Lower heater control section 90: Control Department 91: CPU 92: Lifting pin drive 93: Chamber Drive 94: Internal heater control unit 95: Lower heater control section 96: Upper heater control section 97: Environmental Gas Control Department 111: Inside top surface 112: above 121: Through hole for exhaust 122: Through hole for punching and blowing F: Coating film H: Manipulator S: substrate Sa: Above the substrate Sb: under the substrate SP: processing space

圖1為顯示本發明之基板處理裝置之一實施形態之圖。 圖2A至圖2C為顯示將基板搬入至腔室時之各部之動作之圖。 圖3A及圖3B為顯示升降銷及矯正銷之配置之圖。 圖4(a)及圖4(b)為顯示下部加熱器之配置例之圖。 圖5為顯示藉由基板處理裝置所執行之加熱減壓乾燥處理之流程圖。Fig. 1 is a diagram showing an embodiment of the substrate processing apparatus of the present invention. 2A to 2C are diagrams showing the actions of various parts when the substrate is carried into the chamber. Fig. 3A and Fig. 3B are diagrams showing the arrangement of lift pins and correction pins. Fig. 4(a) and Fig. 4(b) are diagrams showing an example of the arrangement of the lower heater. FIG. 5 is a flowchart showing the heating and decompression drying process performed by the substrate processing apparatus.

1:基板處理裝置 1: Substrate processing equipment

10:腔室 10: Chamber

11:蓋部(上側單元) 11: Cover (upper unit)

12:底板部(下側單元) 12: Floor section (lower unit)

13:密封構件 13: Sealing member

15:下部加熱器(第二加熱部) 15: Lower heater (second heating part)

16:上部加熱器 16: Upper heater

20:熱板(加熱部) 20: Hot plate (heating part)

21:熱板之上面 21: Above the hot plate

30:升降機構 30: Lifting mechanism

32:升降銷(支撐部) 32: Lifting pin (support part)

33:升降構件 33: Lifting member

40:矯正機構 40: Correctional Institution

41:矯正銷(矯正構件) 41: Correction pin (correction component)

42:調整螺帽(調整機構) 42: Adjusting nut (adjustment mechanism)

50:排氣部(減壓部) 50: Exhaust part (decompression part)

51:排氣用配管 51: Exhaust piping

52:沖吹用配管 52: Piping for flushing

53:排氣用閥 53: Exhaust valve

54:泵 54: Pump

55:沖吹用閥 55: Flushing valve

90:控制部 90: Control Department

91:CPU 91: CPU

92:升降銷驅動部 92: Lifting pin drive

93:腔室驅動部 93: Chamber Drive

94:內部加熱器控制部 94: Internal heater control unit

95:下部加熱器控制部 95: Lower heater control section

96:上部加熱器控制部 96: Upper heater control section

97:環境氣體控制部 97: Environmental Gas Control Department

111:內側頂面 111: Inside top surface

112:上面 112: above

121:排氣用貫通孔 121: Through hole for exhaust

122:沖吹用貫通孔 122: Through hole for punching and blowing

F:塗佈膜 F: Coating film

S:基板 S: substrate

Sa:基板上面 Sa: Above the substrate

Sb:基板下面 Sb: under the substrate

SP:處理空間 SP: processing space

Claims (12)

一種基板處理裝置，其藉由基板之加熱及其周圍空間之減壓而使被形成於上述基板之主面的塗佈膜乾燥；其特徵在於，其具備有： 腔室，其具有以水平姿勢可收納上述基板的處理空間； 支撐部，其在上述處理空間內，抵接至上述基板之下面而自下方支撐上述基板； 矯正構件，其部分地抵接至被上述支撐部所支撐的上述基板之上面，以矯正上述基板之翹曲； 加熱部，其在上述處理空間內，對被上述支撐部所支撐的上述基板之下面進行加熱；及 減壓部，其對上述處理空間進行減壓。A substrate processing device that dries a coating film formed on the main surface of the substrate by heating the substrate and depressurizing the surrounding space; it is characterized in that it is provided with: A chamber having a processing space capable of accommodating the above-mentioned substrate in a horizontal posture; A supporting part, which abuts to the bottom of the substrate in the processing space and supports the substrate from below; A correcting member partially abuts on the upper surface of the substrate supported by the support portion to correct the warpage of the substrate; A heating part, which heats the lower surface of the substrate supported by the support part in the processing space; and A decompression part that decompresses the above-mentioned processing space. 如請求項1之基板處理裝置，其中，上述加熱部具有熱板，該熱板係上面具有與上述基板相同或大於該基板的平面尺寸，且被升溫控制至既定溫度， 上述支撐部係以隔開既定之間隔對向於上述熱板之上述上面的方式支撐上述基板。The substrate processing apparatus of claim 1, wherein the heating portion has a hot plate, and the hot plate has a plane size the same as or larger than that of the substrate and is heated to a predetermined temperature, The supporting portion supports the substrate so as to face the upper surface of the hot plate at a predetermined interval. 如請求項1或2之基板處理裝置，其中，在較藉由上述支撐部所支撐的上述基板為低的位置，設置有加熱上述基板之周緣部的第二加熱部。The substrate processing apparatus according to claim 1 or 2, wherein a second heating unit that heats the peripheral portion of the substrate is provided at a position lower than the substrate supported by the support portion. 如請求項3之基板處理裝置，其中，上述第二加熱部係加熱上述腔室之底部。The substrate processing apparatus of claim 3, wherein the second heating part heats the bottom of the chamber. 如請求項1或2之基板處理裝置，其中，上述支撐部一面支撐上述基板一面升降移動。The substrate processing apparatus of claim 1 or 2, wherein the support portion supports the substrate while moving up and down. 如請求項1或2之基板處理裝置，其中，上述腔室具有：下側單元，其設置有上述支撐部及上述加熱部；及上側單元，其設置有上述矯正構件， 藉由上述上側單元與上述下側單元結合而藉由上述上側單元封閉上述下側單元之上部以形成上述處理空間， 當上述上側單元與上述下側單元結合時，上述矯正構件之下端被定位在與被上述支撐部所支撐的上述基板的上面之鉛垂方向位置對應的高度。The substrate processing apparatus of claim 1 or 2, wherein the chamber has: a lower unit provided with the support part and the heating part; and an upper unit provided with the correction member, By combining the upper unit with the lower unit and closing the upper part of the lower unit by the upper unit to form the processing space, When the upper unit and the lower unit are combined, the lower end of the correcting member is positioned at a height corresponding to the vertical position of the upper surface of the substrate supported by the support portion. 如請求項6之基板處理裝置，其中，具備有調整機構，該調整機構係調整上述上側單元與上述下側單元結合時之上述矯正構件的下端之鉛垂方向。The substrate processing apparatus according to claim 6, further comprising an adjustment mechanism for adjusting the vertical direction of the lower end of the correction member when the upper unit and the lower unit are combined. 如請求項1或2之基板處理裝置，其中，上述矯正構件抵接至上述基板之上面周緣部。The substrate processing apparatus according to claim 1 or 2, wherein the correcting member abuts against the upper peripheral edge of the substrate. 如請求項8之基板處理裝置，其中，當俯視時，上述矯正構件係在上述基板中之藉由上述支撐部所支撐的區域之外側與上述基板抵接。The substrate processing apparatus according to claim 8, wherein, when viewed from above, the correcting member is in contact with the substrate on the outside of the region supported by the support portion in the substrate. 一種基板處理方法，其係加熱基板且將其周圍空間減壓而使被形成於上述基板之主面的塗佈膜乾燥的基板處理方法； 於在內部之處理空間內配置有加熱上述基板之加熱部的腔室內，使支撐部抵接至上述基板之下面，並且於上述加熱部之上方且與上述加熱部隔開既定之間隔支撐上述基板， 使矯正構件部分地抵接至被上述支撐部所支撐的上述基板之上面以矯正上述基板之翹曲， 對上述處理空間進行減壓，且藉由上述加熱部加熱上述基板而使上述塗佈膜乾燥。A substrate processing method, which is a substrate processing method that heats the substrate and depressurizes the surrounding space to dry the coating film formed on the main surface of the substrate; In a chamber in which a heating section for heating the substrate is arranged in the processing space inside, the support section is abutted to the bottom of the substrate, and the substrate is supported above the heating section at a predetermined interval from the heating section , The correcting member is partially abutted to the upper surface of the substrate supported by the support portion to correct the warpage of the substrate, The processing space is reduced in pressure, and the coating film is dried by heating the substrate by the heating unit. 如請求項10之基板處理方法，其中，藉由於較藉由上述支撐部所支撐的上述基板為低的位置所設置的第二加熱部，加熱上述基板之周緣部。The substrate processing method of claim 10, wherein the peripheral portion of the substrate is heated by a second heating section provided at a position lower than the substrate supported by the support section. 如請求項10或11之基板處理方法，其中，上述加熱部具有熱板，該熱板係上面具有與上述基板相同或大於該基板的平面尺寸，且被升溫控制至既定溫度， 上述支撐部係以隔開上述間隔對向於上述熱板之上述上面之方式支撐上述基板。According to the substrate processing method of claim 10 or 11, wherein the heating section has a hot plate, and the hot plate has a plane size the same as or larger than that of the substrate, and is heated to a predetermined temperature, The support portion supports the substrate so as to face the upper surface of the hot plate with the interval.
TW109144601A 2019-12-25 2020-12-17 Substrate processing apparatus and substrate processing method TWI826757B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-233851 2019-12-25
JP2019233851A JP7244411B2 (en) 2019-12-25 2019-12-25 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Publications (2)

Publication Number Publication Date
TW202133219A true TW202133219A (en) 2021-09-01
TWI826757B TWI826757B (en) 2023-12-21

Family

ID=76459047

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109144601A TWI826757B (en) 2019-12-25 2020-12-17 Substrate processing apparatus and substrate processing method

Country Status (4)

Country Link
JP (1) JP7244411B2 (en)
KR (1) KR102566766B1 (en)
CN (1) CN113035741A (en)
TW (1) TWI826757B (en)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040162B2 (en) * 1998-04-07 2008-01-30 沖電気工業株式会社 Semiconductor wafer cleaning equipment
JP2000307235A (en) 1999-04-21 2000-11-02 Hitachi Ltd Flow soldering device provided with warp correction mechanism of electronic ciruit board and warp correction method
JP3920699B2 (en) 2001-09-19 2007-05-30 東京エレクトロン株式会社 Vacuum drying apparatus and coating film forming method
JP2006339485A (en) 2005-06-03 2006-12-14 Dainippon Screen Mfg Co Ltd Wafer heat treatment apparatus
KR100842060B1 (en) * 2007-02-12 2008-06-30 (주)지티엔이 Semiconductor heating and cooling system having wafer correcting apparatus
JP5090079B2 (en) * 2007-06-27 2012-12-05 大日本スクリーン製造株式会社 Vacuum dryer
KR101357305B1 (en) 2007-08-29 2014-01-28 삼성전자주식회사 Apparatus for mounting pellicle and methods for mounting pellicle using the same
KR20100006009A (en) * 2008-07-08 2010-01-18 주성엔지니어링(주) Apparatus for manufacturing semiconductor
JP5559736B2 (en) * 2011-04-18 2014-07-23 東京エレクトロン株式会社 Substrate heating apparatus, coating and developing apparatus including the same, and substrate heating method
JP6296299B2 (en) 2014-09-02 2018-03-20 パナソニックＩｐマネジメント株式会社 Plasma processing apparatus and plasma processing method
KR20160042570A (en) 2014-10-10 2016-04-20 삼성전자주식회사 Physical vapor deposition apparatus and method of depositing phase-change materials using the same
JP6277952B2 (en) * 2014-12-26 2018-02-14 東京エレクトロン株式会社 Substrate processing method, storage medium, and heating apparatus
CN107111173A (en) 2015-01-21 2017-08-29 夏普株式会社 The applying method of deformation correcting device and panel component
JP6639867B2 (en) 2015-10-30 2020-02-05 東京応化工業株式会社 Substrate heating apparatus and substrate heating method
JP6872328B2 (en) 2016-09-06 2021-05-19 株式会社Ｓｃｒｅｅｎホールディングス Vacuum drying device, vacuum drying system, vacuum drying method
JP6461235B2 (en) * 2017-05-22 2019-01-30 キヤノントッキ株式会社 Substrate mounting apparatus, film forming apparatus, substrate mounting method, film forming method, and electronic device manufacturing method

Also Published As

Publication number Publication date
JP2021103022A (en) 2021-07-15
JP7244411B2 (en) 2023-03-22
CN113035741A (en) 2021-06-25
KR20210082383A (en) 2021-07-05
TWI826757B (en) 2023-12-21
KR102566766B1 (en) 2023-08-14

Similar Documents

Publication Publication Date Title
JP5089288B2 (en) Vacuum dryer
WO2011118346A1 (en) Substrate processing device, substrate processing method, program, and computer recording medium
JP2006339485A (en) Wafer heat treatment apparatus
CN114570621A (en) Decompression drying device
JP2018040512A (en) Decompression drying apparatus, decompression drying system and decompression drying method
TW202133219A (en) Substrate processing apparatus and substrate processing method
JP2017166802A (en) Decompression drying method and decompression drying device
US11387121B2 (en) Substrate treating apparatus and substrate treating system including pin lift mechanism below cooling base and heat plate
TWI743435B (en) Substrate processing device
CN216605955U (en) Decompression drying device
JP3803487B2 (en) Substrate cooling device and substrate cooling method
TWI798599B (en) Edge flattening equipment and coating drying system including the equipment
KR20200117242A (en) Substrate processing apparatus and substrate processing method
TWI786302B (en) Heating apparatus and heating method
TW202129741A (en) Cooling apparatus, cooling method and method for manufacturing semiconductor package
JP6907280B2 (en) Decompression drying device
JP6535828B1 (en) Substrate processing equipment
JP7025964B2 (en) Heat treatment equipment
TWI836297B (en) Reduced pressure drying device
KR101623011B1 (en) Heating device and heating method
TW201946183A (en) Substrate treating apparatus
KR20230148009A (en) Apparatus for processing substrate