CN113035741A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
CN113035741A
CN113035741A CN202011539006.8A CN202011539006A CN113035741A CN 113035741 A CN113035741 A CN 113035741A CN 202011539006 A CN202011539006 A CN 202011539006A CN 113035741 A CN113035741 A CN 113035741A
Authority
CN
China
Prior art keywords
substrate
heating
unit
processing apparatus
support portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011539006.8A
Other languages
Chinese (zh)
Inventor
平井孝典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Publication of CN113035741A publication Critical patent/CN113035741A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The substrate processing apparatus of the present invention can favorably perform drying processing accompanied by pressure reduction and heating on a warped substrate. To this end, a substrate processing apparatus (1) dries a coating film (F) formed on a main surface of a substrate (S) by heating the substrate (S) and reducing the pressure in the surrounding space thereof, and comprises: a chamber (10) having a processing space capable of accommodating the substrate (S) in a horizontal posture; a support part (32) which is in contact with the lower surface of the substrate (S) in the processing Space (SP) and supports the substrate (S) from below; a correcting member (41) that partially abuts against the upper surface of the substrate (S) supported by the support portion (32) and corrects the warpage of the substrate (S); a heating unit (20) that heats the lower surface of the substrate (S) supported by the support unit (32) in the processing Space (SP); and a decompression unit (50) which decompresses the processing Space (SP).

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method for drying a coating film formed on a substrate.
Background
As one manufacturing process of a semiconductor device, a functional film such as a resist film or a protective film is formed on a substrate surface by applying a coating liquid on the substrate surface to form a coating film and drying the coating film. Heretofore, such drying processes have been generally performed by dedicated apparatuses for respectively performing a reduced-pressure drying process of reducing the pressure in the surrounding space of the substrate on which the coating film is formed and volatilizing the solvent component, and a heat-drying process of heating the substrate after the reduced-pressure treatment and completely drying the coating film (see, for example, japanese patent laid-open No. 2006-105524 (patent document 1)).
Such a conventional technique has problems to be solved, such as a need to transfer substrates between apparatuses, a process time not being shortened, and an increase in an occupied area of the apparatus. In view of these problems, the applicant of the present application has previously disclosed a technique capable of performing a reduced-pressure drying process and a heating drying process with one apparatus (see japanese patent No. 5089288 (patent document 2)).
In this apparatus, the substrate on which the coating film is formed is held in a horizontal posture in a chamber capable of depressurizing the internal space, the internal space is depressurized, and the substrate is heated by a heating lamp provided in the chamber to dry the coating film.
In recent years, the size of a substrate to be processed has been increased. Accordingly, the substrate is likely to be warped, and it is difficult to perform uniform heat treatment. For example, in a semiconductor package manufactured by a manufacturing method such as a Wafer Level Packaging (WLP) or a Panel Level Packaging (PLP), a plurality of semiconductor chips and wirings between the chips are combined in a plurality of layers on a glass substrate. The difference in thermal shrinkage and thermal expansion is larger than that of a semiconductor substrate in which only a resist layer or the like is laminated. Therefore, the warpage of the substrate is significant.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing technique capable of satisfactorily performing a drying process involving pressure reduction and heating even on a warped substrate.
In one aspect of the present invention, there is provided a substrate processing apparatus for drying a coating film formed on a main surface of a substrate by heating the substrate and reducing a pressure in a space around the substrate, the substrate processing apparatus including: a chamber having a processing space capable of accommodating the substrate in a horizontal posture; a support portion that is in contact with a lower surface of the substrate in the processing space and supports the substrate from below; a correcting member that partially abuts an upper surface of the substrate supported by the support portion and corrects warpage of the substrate; a heating unit that heats a lower surface of the substrate supported by the support unit in the processing space; a decompression unit for decompressing the processing space
Another aspect of the present invention is a substrate processing method for heating a substrate, reducing a pressure in a space around the substrate, and drying a coating film formed on a main surface of the substrate, the substrate processing method including: a support part which is in contact with a lower surface of the substrate and supports the substrate above the heating part with a predetermined gap therebetween, the substrate being disposed in a chamber in which a heating part for heating the substrate is disposed in an internal processing space; abutting a correcting member against an upper surface portion of the substrate supported by the support portion, thereby correcting the warpage of the substrate; the processing space is depressurized, and the substrate is heated by the heating unit to dry the coating film.
In the structure of heating the substrate from the lower surface side, if the substrate is warped, the substrate cannot be uniformly heated, and the quality of the dried coating film varies. In the invention thus constituted, the correcting member abuts against the upper surface of the substrate supported from the lower surface side by the support portion, thereby holding the substrate from both the upper and lower surfaces, and correcting the warpage when the substrate has the warpage. Therefore, even in a warped substrate, the coating film can be dried satisfactorily while suppressing uneven heating of the coating film on the substrate surface.
As described above, in the present invention, the warpage can be corrected by the correction member coming into contact with the upper surface of the substrate. Therefore, the drying process accompanied by the pressure reduction and heating can be favorably performed also for the warped substrate.
Drawings
Fig. 1 is a diagram showing an embodiment of a substrate processing apparatus according to the present invention.
Fig. 2A to 2C are diagrams illustrating operations of respective portions when a substrate is loaded into a chamber.
Fig. 3A and 3B are diagrams showing the arrangement of the lift pins and the leveling pins.
Fig. 4 is a diagram showing an example of the arrangement of the lower heater.
Fig. 5 is a flowchart showing a heating/decompression drying process performed by the substrate processing apparatus.
Description of the reference numerals:
1 substrate processing apparatus
10 Chamber
11 cover part (Upper side unit)
12 bottom plate part (lower side unit)
15 lower heater (second heating part)
20 Hot plate (heating part)
32 lifting pin (supporting part)
41 straightening pin (straightening component)
42 adjusting nut (adjusting mechanism)
50 exhaust part (decompression part)
F coating film
S substrate
SP processing space
Detailed Description
Fig. 1 is a diagram showing an embodiment of a substrate processing apparatus according to the present invention. More specifically, fig. 1 is a sectional view showing a configuration of a main part of a substrate processing apparatus 1 according to an embodiment of the present invention, and a block diagram of a control system corresponding to the sectional view. In the following drawings, in order to clarify the arrangement relationship of the respective parts of the apparatus, a right-handed rectangular coordinate system XYZ is set as shown in fig. 1. The XY plane shown in the coordinate system represents a horizontal plane, and the Z direction represents a vertical direction. In particular, the (-Z) direction represents a vertically downward direction.
The substrate processing apparatus 1 can be applied to, for example, a part of a manufacturing process of a Panel Level Package (PLP). Specifically, the substrate processing apparatus 1 receives the substrate S having the coating film F formed of the processing liquid formed on the surface thereof in a state where the coating film F is not dried, heats the substrate S, and reduces the pressure in the surrounding space. Thus, the substrate processing apparatus 1 performs a process of volatilizing the solvent component in the coating film and drying and curing the coating film. Hereinafter, such a substrate treatment is referred to as a "heating/reduced-pressure drying treatment".
As the substrate S, for example, a glass substrate for semiconductor packaging, which is rectangular in a plan view and on the surface of which a semiconductor chip, a wiring, or the like is laminated, can be applied. The coating film F is, for example, a photoresist film. The material of the substrate and the type of the coating film are not limited to these. In addition, the substrate to be processed may be, for example, a substrate for manufacturing a semiconductor device other than a semiconductor package.
The main structure of the substrate processing apparatus 1 includes a chamber 10, an exhaust unit 50, and a control unit 90. The chamber 10 accommodates the substrate S having the coating film F formed on the upper surface Sa therein and performs a predetermined process. The exhaust unit 50 is connected to the internal space of the chamber 10 and exhausts the internal space of the chamber. The control Unit 90 includes a CPU (Central Processing Unit) 91. The CPU91 executes a predetermined control program to control the operations of the respective units of the apparatus, thereby realizing various processes described below. In addition, the dashed arrows in fig. 1 indicate the progression of the control signal from the control section 90 to each section of the apparatus.
The chamber 10 has a function of forming a processing space SP for reducing the pressure around the substrate S, preventing a gas component volatilized by the processing from scattering around the processing space SP, and covering the heated periphery of the substrate S to suppress heat emission and improve energy efficiency. For these purposes, the chamber 10 forms a box-type structure combining the lid portion 11 and the bottom plate portion 12 by the sealing member 13. More specifically, the cover 11 having a cavity opened downward closes the upper portion of the substantially flat plate-shaped bottom plate 12, thereby forming the processing space SP between the cover 11 and the bottom plate 12. The cover 11 and the base 12 are made of a metal material such as stainless steel or aluminum. The sealing member 13 is formed of an elastic material such as rubber.
The lid 11 is supported by a support mechanism (not shown) and can be raised and lowered in the vertical direction (Z direction). The chamber drive unit 93 provided in the control unit 90 moves the lid 11 up and down in the Z direction to open and close the chamber 10. Specifically, the chamber 10 is closed in a state where the cover 11 is positioned at the lower position shown in fig. 1 by the chamber driving unit 93, and the processing space SP is formed inside. On the other hand, the chamber driving unit 93 moves the lid 11 upward to separate the lid 11 and the bottom plate 12, and the processing space SP communicates with the external space. The substrate S can be processed in the closed state of the lid 11, and the substrate S can be carried in and out, and the maintenance work for the internal components, and the like can be performed in the open state of the lid 11.
A hot plate 20 is provided on the bottom plate portion 12 of the chamber 10. The hot plate 20 is a flat plate-like member having an upper surface with a size substantially equal to or slightly smaller than that of the substrate S in a plan view. As a heat source for raising the temperature of the heat plate 20, a heater, not shown, is incorporated inside the heat plate 20. In order to distinguish this heater from other heat sources, it will be referred to as an "internal heater" hereinafter. The heat plate 20 is supported by a support member, not shown, and is separated from the upper surface of the bottom plate portion 12 at the top. This enables thermal separation between the heat plate 20 and the bottom plate portion 12. The internal heater is heated by supplying power from the internal heater control unit 94 of the control unit 90 to the internal heater, and the hot plate 20 is heated. The internal heater control unit 94 controls the internal heater to bring the upper surface 21 of the hot plate 20 to a predetermined temperature in accordance with a control command from the CPU 91. Thereby, the substrate S is uniformly heated by the radiant heat from the hot plate 20.
In order to smoothly transfer the substrate S between the hot plate 20 and an external transfer robot, the substrate processing apparatus 1 is provided with an elevating mechanism 30. Specifically, the bottom plate portion 12 of the chamber 10 and the hot plate 20 are provided with a plurality of through holes extending in the vertical direction Z, and the lift pins 32 are inserted into the through holes. The lower end of each lift pin 32 is fixed to a lift member 33. The lift member 33 supports the lift pin 32 so that the lift pin 32 can be lifted and lowered in the vertical direction by the lift pin driving unit 92 of the control unit 90. The lifter pin driving unit 92 is activated in response to a lifting command from the CPU91 to lift the lifting member 33. Thereby, the respective lift pins 32 are integrally lifted. The lift pins 32 move up and down between an upper position where the upper ends of the lift pins 32 protrude a large amount upward from the upper surface 21 of the heat plate 20 and a lower position where the amount of protrusion of the upper ends of the lift pins 32 from the upper surface 21 of the heat plate 20 is small.
Fig. 1 shows a state in which the lift pin is located at a lower position. In this state, the upper end of the lift pin 32 slightly protrudes upward from the upper surface 21 of the hot plate 20. Therefore, the substrate S is supported in a horizontal posture with its lower surface Sb spaced apart from the upper surface 21 of the hot plate 20 by a slight gap. Further, instead of being supported by the lift pins 32, the substrate S may be supported by a projection provided on the upper surface 21 of the hot plate 20. In this case, the lift pins 32 may be located further downward and separated from the substrate S.
The substrate S is heated by radiant heat from the upper surface 21 of the hot plate 20. By providing a gap between the lower surface Sb of the substrate S and the upper surface 21 of the hot plate 20, heat transfer from the hot plate 20 to the substrate S is mainly performed by radiation without conduction. This can suppress uneven heating of the substrate S caused by uneven temperature on the hot plate 20. As a result, the coating film F formed on the substrate S can be uniformly heated, and a uniform film can be formed.
The substrate S carried in as the object to be processed is not limited to maintain a flat state, and may be bent or warped. For example, the substrates S having functional layers having different thermal expansion coefficients may be carried in as they are in a state of remaining in a warp state due to expansion and contraction of each layer during the process.
Such warping of the substrate S causes variation in the gap between the substrate S and the hot plate 20. The deviation of the distance from the heat source causes uneven heating of the coating film F, which in turn causes deviation of the film quality. Therefore, in order to correct such warpage of the substrate S to be close to a flat state, the substrate processing apparatus 1 is provided with a correcting mechanism 40.
The aligning mechanism 40 is configured such that a plurality of aligning pins 41 are respectively attached to the inner top surface 111 of the cover 11 by adjusting nuts 42. When the substrate S has warpage, the correcting pins 41 come into contact with the upper surface Sa of the substrate S from above in the closed state of the lid 11 to correct the warpage. The "leveling" is not to strictly level the substrate S, and is intended to suppress the variation in the gap between the substrate S and the hot plate 20 to such an extent that heating unevenness is not generated. Therefore, it is not necessary that all the leveling pins 41 abut on the substrate S.
The vertical position of the lower end of each leveling pin 41 can be changed by individually adjusting the amount of screwing of the leveling pin 41 into the adjusting nut 42. This makes it possible to align the Z-direction positions of the lower ends of the leveling pins 41, and to properly level substrates S of various thicknesses.
The bottom plate portion 12 of the chamber 10 is provided with an exhaust through-hole 121 and a cleaning through-hole 122. The exhaust through hole 121 is connected to an exhaust pipe 51 of the exhaust unit 50. The cleaning through-hole 122 is connected to the cleaning pipe 52 of the exhaust unit 50. The exhaust pipe 51 is connected to an unillustrated exhaust line via an exhaust valve 53 and a pump 54. The purge pipe 52 is connected to a purge gas source, not shown, via a purge valve 55.
The exhaust unit 50 is controlled by the atmosphere control unit 97 of the control unit 90. Specifically, the exhaust valve 53 and the pump 54 are activated in response to a control signal from the atmosphere controller 97, and the gas in the chamber 10 is exhausted to reduce the pressure in the processing space SP. Further, the purge valve 55 is activated in response to a control signal from the atmosphere controller 97, and a purge gas is introduced into the processing space SP from an external gas source. In this manner, the atmosphere in the processing space SP is controlled by operating the exhaust unit 50 in accordance with the control signal from the atmosphere control unit 97.
The upper heater 16 is provided on the upper surface 112 of the lid portion 11. The upper heater 16 receives power supplied from the upper heater control unit 96 of the control unit 90, and heats the top plate of the lid 11. By heating the lid portion 11 as necessary, it is possible to prevent the components volatilized from the coating film F from contacting the low-temperature lid portion 11 and precipitating and dropping on the substrate S.
Further, a lower heater 15 is provided on the lower surface of the bottom plate portion 12. The lower heater 15 receives the electric power supplied from the lower heater control unit 95 of the control unit 90, and heats the bottom plate portion 12. As will be described in detail later, the lower heater 15 has a function of assisting in heating the peripheral edge portion of the substrate S from below via the bottom plate portion 12, thereby reducing temperature unevenness of the substrate S.
Fig. 2A to 2C are diagrams schematically showing the operation of each part when a substrate is loaded into a chamber. As described above, in the substrate processing apparatus 1, the substrate S can be received from the outside in a state where the lid 11 constituting the chamber 10 is retracted upward. Specifically, the chamber driving unit 93 moves the lid 11 upward, and thus can vertically separate the lid 11 from the bottom plate 12 as shown in fig. 2A.
In this state, the substrate S can be carried in from the side. That is, the substrate S is carried into the substrate processing apparatus 1 through the gap between the lid 11 and the bottom plate 12 in a state of being mounted on the arm H provided on the external carrying robot. At this time, in order to avoid interference with the arm H, the lift pin 32 is preferably lowered to the lower position.
As shown in fig. 2B, when the substrate S is transferred to the predetermined position, the lift pins 32 are raised to contact the lower surface Sb of the substrate S, and the substrate S is transferred from the arm H to the lift pins 32. As shown in fig. 2C, after the transfer, the arm H retracts to the side, and the lift pin 32 moves down to the lower position, thereby horizontally supporting the substrate S with a predetermined gap from the hot plate 20.
As shown by the broken line arrows in fig. 2C, the lid portion 11 is lowered from this state, and as shown in fig. 1, the lid portion 11 and the bottom plate portion 12 are joined via the sealing member 13. Thereby, the state of the closed processing space SP is presented. At this time, the correcting pins 41 adjusted according to the height of the upper surface Sa of the substrate S are brought into contact with the substrate S, thereby correcting the warpage of the substrate S. In addition, the substrate S can be carried out from the chamber 10 by the reverse operation.
Fig. 3A and 3B are diagrams showing the arrangement of the lift pins and the leveling pins. Fig. 3A shows the positional relationship between the base plate S and the lift pins 32 and the leveling pins 41 in a plan view. More specifically, the positions where the lift pins 32 abut the substrate S supported in the horizontal posture from the lower surface side are indicated by white circles. The position where the leveling pin 41 abuts against the substrate S from the upper surface side of the substrate S is indicated by a hatched circle. As shown in the drawing, the plurality of lift pins 32 are arranged at a certain pitch in a distributed manner to distribute the load of the substrate S and support the substrate S. On the other hand, outside the region Rp where the lift pins 32 are arranged in this manner, the plurality of leveling pins 41 are arranged at a constant pitch. Therefore, the leveling pins 41 contact the substrate S at positions outside the positions where the lift pins 32 contact the substrate S. The arrangement of the lift pins 32 in the area Rp and the arrangement of the leveling pins 41 outside the area Rp are not limited to these.
The reason for the above arrangement is as follows. In the substrate processing apparatus 1 of the present embodiment, the substrate S to be subjected to the processing is, for example, a substrate in which devices such as a semiconductor circuit are laminated on an upper surface of a glass substrate. As shown in fig. 3B, in such a substrate, the peripheral portion of the substrate S is often warped upward due to the difference in thermal expansion coefficient between the respective materials, and the entire substrate S is often formed into a curved surface protruding downward.
In such a case, if the substrate S is supported from below only by the lift pins 32, the warp of the substrate S is released, and as a result, the gap between the peripheral portion of the substrate S and the hot plate 20 is larger than the gap between the central portion thereof and the hot plate 20. This may cause a problem that the distance between the peripheral edge of the substrate S and the heat plate 20 as a heat source is increased, and heating is insufficient. By the leveling pins 41 coming into contact with the upper surface of the substrate S at a position outside the region Rp supported from below by the lift pins 32, the warp of the peripheral edge portion of the substrate S can be pressed from above as shown by the broken line in fig. 3B, and the substrate S can be brought close to a flat state.
In the heat drying treatment performed in advance in a state where the solvent component is partially volatilized by reducing the pressure of the coating film as in the technique described in patent document 1, the coating film is cured to some extent before heating. Therefore, such uneven heating has relatively little influence on the quality of the completely dried coating film. On the other hand, in the heating and vacuum drying process of the receiving substrate in a state where the coating film is not dried as in the present embodiment, the variation in film quality due to uneven heating of the liquid coating film becomes more remarkable. Therefore, the above-described measures to reduce the heating unevenness by correcting the warpage of the substrate S are particularly effective.
In order to solve the problem of insufficient heating of the peripheral portion of the substrate S, the substrate processing apparatus 1 of the present embodiment further includes a lower heater 15 (fig. 1) disposed on the bottom plate portion 12 of the chamber 10. The lower heater 15 heats the bottom plate portion 12, and heats the substrate S in an auxiliary manner by an internal heater in the hot plate 20.
When the temperature of the heat plate 20 is raised by heat generation of the internal heater, the temperature may not sufficiently rise particularly at the peripheral portion where the heat is easily dissipated to the outside as compared with the central portion of the heat plate 20. Therefore, even if the distance from the hot plate 20 can be kept constant over the entire substrate S, the peripheral portion of the substrate S is not sufficiently heated, and heating unevenness occurs. When the substrate S is rectangular, insufficient heating tends to occur particularly in the vicinity of the four corners thereof.
Although improvement may be possible by adding temperature detection points to the hot plate 20 or designing the heat generation pattern of the heater, temperature instability may be caused instead because of mutual interference between control points. In order to cope with this problem, in the substrate processing apparatus 1, the lower heater 15 is provided to selectively heat the peripheral portion of the substrate S, thereby solving the problem of the temperature difference from the central portion.
Fig. 4 is a diagram showing an example of the arrangement of the lower heater. As shown in two examples in fig. 4, which are denoted by symbols (a) and (b), the lower heater 15 is disposed at a position corresponding to the peripheral portion of the substrate S disposed above the lower surface of the bottom plate portion 12. Specifically, in the example shown in fig. 4 (a), the lower heater 15 includes four heat generating elements 15a to 15d, and the heat generating elements 15a to 15d correspond to four vertices of the substrate S and are disposed so as to cover positions directly below the vertices and peripheral regions thereof. On the other hand, in the example shown in fig. 4 (b), the lower heater 15 having a rectangular ring shape is provided so as to cover a peripheral region including positions immediately below four sides of the peripheral edge portion of the substrate S.
In these configurations, the peripheral portion of the substrate S, which is likely to have a lower temperature than the central portion of the substrate S, can be heated by energizing the lower heater 15 as necessary. The heating can be performed directly by the radiant heat from the bottom plate portion 12 heated by the lower heater 15, or indirectly by the peripheral edge portion of the radiant heat heating plate 20. This makes it possible to uniformly dry the coating film F over the entire substrate, and to achieve uniform and good quality of the dried coating film F.
In order to prevent contaminants such as particles generated by the lower heater 15 from adhering to the substrate S, the lower heater 15 is preferably disposed below the substrate S. This is the same for the internal heater, but the internal heater (specifically, the hot plate 20 incorporating the same) as the heating body of the substrate S needs to be disposed in the chamber 10 close to the substrate S.
On the other hand, the lower heater 15 heats only the peripheral edge of the substrate S in an auxiliary manner, and thus does not need to be disposed close to the substrate S. As described in this embodiment, the lower heater 15 may be provided on the outer side of the chamber 10, for example, on the lower surface of the bottom plate portion 12. By disposing the hot plate 20 and the lower heater 15 separately in this manner, it is possible to prevent the temperature distribution from becoming unstable due to the mutual interference of the respective temperature controls. However, in order to obtain a sufficient heating effect, the set target temperature of the lower heater 15 is preferably higher than the set target temperature of the internal heater.
Fig. 5 is a flowchart showing a flow of the heating/decompression drying process performed by the substrate processing apparatus. This process is realized by the CPU91 of the control unit 90 executing a control program prepared in advance to cause each unit of the apparatus to execute a predetermined operation. The hot plate 20 is heated to a predetermined temperature in advance (step S101). The temperature rise control is also performed on the upper heater 16 and the lower heater 15 as needed.
Then, the lift pins 32 are positioned at the lower position, and the lid 11 is moved upward to be opened (step S102), thereby bringing the substrate S into a state in which it can be received. In this state, the unprocessed substrate S (i.e., loaded with the undried coating film F) is carried in by the external transfer robot, and the lift pins 32 are raised to the upper position, so that the substrate S is received from the hand H of the transfer robot (step S103). The carrying in and out of the substrate S is not limited to the operation by the carrying robot, and may be any method using an appropriate carrying mechanism capable of carrying the substrate in a horizontal posture.
The transport robot retracts, and the lift pins 32 are lowered to the lower position (step S104), whereby the substrate S is positioned at a position for processing, that is, at an upper position spaced apart from the hot plate 20 heated in advance by a predetermined gap. Then, the lid 11 is lowered to close the processing space SP, and the correcting pin 41 attached to the lid 11 abuts against and presses the upper surface Sa of the substrate S, thereby correcting the warpage of the substrate S (step S105).
Then, the exhaust unit 50 is operated to reduce the pressure in the processing space SP (step S106). The evaporation of the solvent component in the coating film F is promoted by the reduced pressure in the processing space SP containing the substrate S in cooperation with the heating, and the coating film F is dried. At this time, the peripheral edge portion of the substrate S is heated by the lower heater 15, so that the substrate S can be uniformly dried.
After the heating of the substrate S and the depressurization of the peripheral space are continued for a predetermined time (step S107), the exhaust unit 50 stops the exhaust and introduces a purge gas instead (step S108), thereby releasing the depressurized state of the processing space SP. Then, the lid 11 is moved upward, the substrate S in the processing space SP is exposed to the outside space (step S109), and the lift pins 32 are raised to retract the substrate S upward from the hot plate 20 (step S110). Subsequently, the substrate S is received by an external transport robot, and the dried substrate S is carried out to the outside (step S111).
When there is a next substrate S to be processed (yes in step S112), the process returns to step S102 to receive a new substrate S and execute the same process as described above. On the other hand, if there is no new substrate S (no in step S112), the process can be ended by a predetermined ending operation.
As described above, the substrate processing apparatus 1 according to the present embodiment takes the substrate S on which the undried coating film F is formed into the chamber 10, and performs the heating and vacuum drying process on the coating film F in the chamber 10. In this case, the lift pins 32 abut on the lower surface Sb side of the substrate S, while the leveling pins 41 abut on the upper surface Sa side of the substrate S, whereby the warpage of the substrate S can be leveled to a nearly flat state. This can reduce the variation in the quality of the dried coating film F due to uneven heating caused by the substrate S being locally displaced from the hot plate 20.
Further, a lower heater 15 for heating the peripheral edge of the substrate S in an auxiliary manner is provided below the substrate S. Therefore, the occurrence of a temperature difference between the peripheral portion and the central portion of the substrate S can be suppressed, and the quality variation of the coating film F due to uneven heating can be further reduced.
The present invention is not limited to the above embodiments, and various modifications other than those described above can be made without departing from the spirit and scope of the present invention. For example, in the above embodiment, sixteen lift pins 32 are disposed in the region Rp in the center portion of the substrate S, and sixteen leveling pins 41 are disposed so as to surround the outside thereof. However, these configurations are merely examples, and regarding the configurations, appropriate changes and applications can be made thereto.
The leveling pins 41 of the above embodiment contact the substrate S at positions outside the lift pins 32, but the present invention is not limited to this, and the leveling pins may be disposed so as to contact the substrate at the same positions as the outermost lift pins, that is, at positions corresponding to the outer edges of the region Rp.
In addition, the lift pins 32 and the leveling pins 41 of the above embodiment are small tip portions that contact the substrate S. However, at least one of the member abutting the lower surface to support the substrate S and the member abutting the upper surface to correct the warpage may be, for example, a rod-shaped or plate-shaped member that abuts the substrate with a larger area than the pin-shaped member.
In the chamber 10 of the above embodiment, the processing space SP is formed by covering the upper portion of the flat bottom plate 12 with the cover 11 having an opening at the lower side. Alternatively, for example, a flat plate-like cover member may close the upper portion of the box-shaped frame having the upper opening.
In the above embodiment, the upper heater 16 and the lower heater 15 may be energized as necessary, or may be subjected to a drying process without using at least one of them.
In the above embodiment, a rectangular substrate is used as a processing target, and the shape of the hot plate and the arrangement of the lift pins and the leveling pins are assumed to be the rectangular substrate. However, the substrate to which the present invention is applied is not limited to a rectangular shape. For example, even in the case of a circular substrate or a shaped substrate having an uneven outer periphery, the same processing can be performed by appropriately changing the shape and arrangement of each part.
As described above, in the substrate processing apparatus 1 according to this embodiment, the lift pins 32 function as the "support portions" of the present invention, and the leveling pins 41 function as the "leveling members" of the present invention. The heat plate 20 functions as a "heating unit" of the present invention, and the lower heater 15 functions as a "second heating unit". The exhaust unit 50 functions as a "pressure reducing unit" in the present invention. The lid 11 corresponds to an "upper unit" of the present invention, and the bottom plate 12 corresponds to a "lower unit" of the present invention, and the two units form a "chamber" of the present invention as a whole. The adjusting nut 42 functions as an "adjusting mechanism" of the present invention.
As described above, by way of example, a specific embodiment has been described, and in the present invention, the heating unit includes a hot plate whose temperature is controlled to be raised to a predetermined temperature, the flat surface size of the upper surface of the hot plate is equal to or larger than the substrate, and the support unit may be configured to support the substrate so that the substrate and the upper surface of the hot plate face each other with a predetermined gap therebetween. According to such a configuration, the substrate S can be uniformly heated by the radiant heat from the hot plate whose temperature is controlled.
In addition, for example, a second heating portion that heats the peripheral portion of the substrate may be provided at a position lower than the substrate supported in the chamber. According to this configuration, the peripheral portion of the substrate, which is likely to have a lower temperature than the central portion, is heated by the second heating unit, so that the temperature difference from the central portion can be eliminated and the drying process can be performed uniformly.
In this case, the second heating part may heat the bottom of the chamber. According to such a configuration, the second heating unit is disposed apart from the heating unit that directly heats the substrate. The second heating part indirectly heats the substrate via the bottom of the chamber. This can prevent the temperature control of the two heating portions from interfering with each other, thereby making the temperature distribution of the substrate complicated or unstable.
In addition, for example, the support portion may support and move the substrate up and down. With this configuration, the distance between the substrate and the heating unit can be changed. Therefore, for example, the work for carrying in and out the substrate with respect to the chamber can be easily performed.
For example, the chamber may include a lower unit provided with a support portion and a heating portion, and an upper unit provided with a correcting member, the upper unit being engaged with the lower unit, and the upper unit closing an upper portion of the lower unit to form a processing space. In this case, the upper unit and the lower unit may be engaged with each other, and the lower end of the correcting member may be positioned at a height corresponding to a vertical position of the upper surface of the substrate supported by the support portion. According to such a configuration, the operation itself of forming the processing space by engaging the upper unit and the lower unit is also an operation of pressing the substrate by the correcting member to correct the warpage, and the processing time can be shortened.
In this case, an adjustment mechanism for adjusting the vertical position of the lower end of the correction member when the upper unit and the lower unit are engaged with each other may be further provided. Thus, substrates having different thicknesses can be processed using the same apparatus. In other words, the substrate processing apparatus can handle substrates of various thicknesses by including the adjustment mechanism.
In addition, for example, the correcting member may be in contact with the upper surface peripheral edge portion of the substrate. More specifically, the correcting member may be in contact with the substrate at a position more outside than a region of the substrate supported by the support portion in a plan view. According to this structure, the substrate having the peripheral portion warped upward can be corrected so as to be nearly flat.
Industrial applicability
The present invention can be widely applied to a substrate processing process in which a coating liquid is applied to a surface and dried to form a layer of a coating film on the surface of a substrate.

Claims (12)

1. A substrate processing apparatus for drying a coating film formed on a main surface of a substrate by heating the substrate and reducing a pressure in a space around the substrate,
the substrate processing apparatus includes:
a chamber having a processing space capable of accommodating the substrate in a horizontal posture;
a support portion that is in contact with a lower surface of the substrate in the processing space and supports the substrate from below;
a correcting member that partially abuts an upper surface of the substrate supported by the support portion, thereby correcting warpage of the substrate;
a heating unit that heats a lower surface of the substrate supported by the support unit in the processing space;
and a decompression unit configured to decompress the processing space.
2. The substrate processing apparatus according to claim 1,
the heating section has a hot plate whose temperature is controlled to be raised to a predetermined temperature, and the planar size of the upper surface of the hot plate is equal to or larger than the substrate,
the support portion supports the substrate by opposing the substrate to the upper surface of the hot plate with a predetermined gap therebetween.
3. The substrate processing apparatus according to claim 1 or 2,
a second heating portion that heats a peripheral portion of the substrate is provided at a position lower than the substrate supported by the support portion.
4. The substrate processing apparatus according to claim 3,
the second heating part heats the bottom of the chamber.
5. The substrate processing apparatus according to claim 1 or 2,
the support part supports the substrate and enables the substrate to move up and down.
6. The substrate processing apparatus according to claim 1 or 2,
the chamber has a lower unit provided with the support portion and the heating portion, and an upper unit provided with the correcting member,
the upper unit and the lower unit are capable of engaging with each other, the upper unit closes an upper portion of the lower unit to form the processing space,
when the upper unit and the lower unit are engaged with each other, the lower end of the correcting member is positioned at a height corresponding to a vertical position of the upper surface of the substrate supported by the support portion.
7. The substrate processing apparatus according to claim 6,
the substrate processing apparatus includes: and an adjustment mechanism that adjusts a vertical position of a lower end of the correction member when the upper unit and the lower unit are engaged with each other.
8. The substrate processing apparatus according to claim 1 or 2,
the correcting member abuts against a peripheral edge portion of the upper surface of the substrate.
9. The substrate processing apparatus according to claim 8,
the correcting member is configured to contact the substrate at a position outside a region of the substrate supported by the support portion in a plan view.
10. A substrate processing method for heating a substrate and drying a coating film formed on a main surface of the substrate by reducing a pressure in a space around the substrate,
the substrate processing method includes:
a support portion that is disposed in a chamber of a processing space inside the chamber, and supports the substrate above the heating portion with a predetermined gap therebetween, the support portion being in contact with a lower surface of the substrate,
partially abutting a correcting member with an upper surface of the substrate supported by the support portion, thereby correcting the warpage of the substrate,
the processing space is depressurized and the substrate is heated by the heating unit, thereby drying the coating film.
11. The substrate processing method according to claim 10,
the peripheral portion of the substrate is heated by a second heating portion provided at a position lower than the substrate supported by the support portion.
12. The substrate processing method according to claim 10 or 11,
the heating section has a hot plate whose temperature is controlled to be raised to a predetermined temperature, and the planar size of the upper surface of the hot plate is equal to or larger than the substrate,
the support portion supports the substrate by opposing the substrate to the upper surface of the hot plate with a predetermined gap therebetween.
CN202011539006.8A 2019-12-25 2020-12-23 Substrate processing apparatus and substrate processing method Pending CN113035741A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-233851 2019-12-25
JP2019233851A JP7244411B2 (en) 2019-12-25 2019-12-25 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Publications (1)

Publication Number Publication Date
CN113035741A true CN113035741A (en) 2021-06-25

Family

ID=76459047

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011539006.8A Pending CN113035741A (en) 2019-12-25 2020-12-23 Substrate processing apparatus and substrate processing method

Country Status (4)

Country Link
JP (1) JP7244411B2 (en)
KR (1) KR102566766B1 (en)
CN (1) CN113035741A (en)
TW (1) TWI826757B (en)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4040162B2 (en) * 1998-04-07 2008-01-30 沖電気工業株式会社 Semiconductor wafer cleaning equipment
JP2000307235A (en) 1999-04-21 2000-11-02 Hitachi Ltd Flow soldering device provided with warp correction mechanism of electronic ciruit board and warp correction method
JP3920699B2 (en) 2001-09-19 2007-05-30 東京エレクトロン株式会社 Vacuum drying apparatus and coating film forming method
JP2006339485A (en) 2005-06-03 2006-12-14 Dainippon Screen Mfg Co Ltd Wafer heat treatment apparatus
KR100842060B1 (en) * 2007-02-12 2008-06-30 (주)지티엔이 Semiconductor heating and cooling system having wafer correcting apparatus
JP5090079B2 (en) * 2007-06-27 2012-12-05 大日本スクリーン製造株式会社 Vacuum dryer
KR101357305B1 (en) 2007-08-29 2014-01-28 삼성전자주식회사 Apparatus for mounting pellicle and methods for mounting pellicle using the same
KR20100006009A (en) * 2008-07-08 2010-01-18 주성엔지니어링(주) Apparatus for manufacturing semiconductor
JP5559736B2 (en) * 2011-04-18 2014-07-23 東京エレクトロン株式会社 Substrate heating apparatus, coating and developing apparatus including the same, and substrate heating method
JP6296299B2 (en) 2014-09-02 2018-03-20 パナソニックＩｐマネジメント株式会社 Plasma processing apparatus and plasma processing method
KR20160042570A (en) 2014-10-10 2016-04-20 삼성전자주식회사 Physical vapor deposition apparatus and method of depositing phase-change materials using the same
JP6277952B2 (en) * 2014-12-26 2018-02-14 東京エレクトロン株式会社 Substrate processing method, storage medium, and heating apparatus
CN107111173A (en) 2015-01-21 2017-08-29 夏普株式会社 The applying method of deformation correcting device and panel component
JP6639867B2 (en) 2015-10-30 2020-02-05 東京応化工業株式会社 Substrate heating apparatus and substrate heating method
JP6872328B2 (en) 2016-09-06 2021-05-19 株式会社Ｓｃｒｅｅｎホールディングス Vacuum drying device, vacuum drying system, vacuum drying method
JP6461235B2 (en) * 2017-05-22 2019-01-30 キヤノントッキ株式会社 Substrate mounting apparatus, film forming apparatus, substrate mounting method, film forming method, and electronic device manufacturing method

Also Published As

Publication number Publication date
TWI826757B (en) 2023-12-21
KR20210082383A (en) 2021-07-05
TW202133219A (en) 2021-09-01
JP2021103022A (en) 2021-07-15
JP7244411B2 (en) 2023-03-22
KR102566766B1 (en) 2023-08-14

Similar Documents

Publication Publication Date Title
JP5089288B2 (en) Vacuum dryer
WO2011118346A1 (en) Substrate processing device, substrate processing method, program, and computer recording medium
JP2011035199A (en) Substrate mounting mechanism and substrate processing apparatus using the same
CN114570621A (en) Decompression drying device
JP6872328B2 (en) Vacuum drying device, vacuum drying system, vacuum drying method
KR100574058B1 (en) Wafer bake apparatus
CN113035741A (en) Substrate processing apparatus and substrate processing method
JP6910798B2 (en) Vacuum drying method and vacuum drying device
CN210805713U (en) Heating device
CN216605955U (en) Decompression drying device
JP6535828B1 (en) Substrate processing equipment
KR20210050614A (en) Apparatus for processing substrate
KR20200117242A (en) Substrate processing apparatus and substrate processing method
KR20210004382A (en) Substrate drying apparatus
JP3784305B2 (en) Vacuum drying apparatus and vacuum drying method
CN115532558A (en) Reduced pressure drying device and reduced pressure drying method
TWI786302B (en) Heating apparatus and heating method
TW202204050A (en) Edge flattening equipment and coating drying system including the same reducing the surface tension of the coating liquid film in the edge part and thus suppressing protrusions in the edge part of the coating liquid film
CN112992727A (en) Cooling device, cooling method, and method for manufacturing semiconductor package
TWI737353B (en) Decompression drying device
JP2885502B2 (en) Heat treatment equipment
JP7025964B2 (en) Heat treatment equipment
JP6551814B2 (en) Plasma processing apparatus and plasma processing method
KR20070025092A (en) Lift finger of wafer lift unit
KR20150103825A (en) Heating device and heating method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination